Works (18)
Updated: July 5th, 2023 16:04
2006 journal article
A comparison of thickness values for very thin SiO2 films by using ellipsometric, capacitance-voltage, and HRTEM measurements
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153(1), F12–F19.
Source: Web Of Science
Added: August 6, 2018
2001 journal article
Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon
APPLIED SURFACE SCIENCE, 181(1-2), 78–93.
Contributors: J. Chambers n, B. Busch*, W. Schulte*, T. Gustafsson*, E. Garfunkel*, S. Wang n, n, T. Klein*, G. Parsons n
author keywords: X-ray photoelectron spectroscopy; transmission electron microscopy; capacitance-voltage curve
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018
1999 journal article
A low-thermal-budget in situ doped multilayer silicon epitaxy process for MOSFET channel engineering
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(3), 1189–1196.
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
1999 journal article
Effects of oxygen during selective silicon epitaxial growth using disilane and chlorine
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(6), 2344–2352.
Source: Web Of Science
Added: August 6, 2018
1999 journal article
Effects of oxygen on selective silicon deposition using disilane
MATERIALS LETTERS, 38(6), 418–422.
author keywords: silicon; CVD; disilane; selective silicon deposition
Source: Web Of Science
Added: August 6, 2018
1999 journal article
Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100)
APPLIED PHYSICS LETTERS, 75(25), 4001–4003.
Contributors: T. Klein n, D. Niu n, W. Epling n, W. Li n, n, C. Hobbs*, R. Hegde*, I. Baumvol*, G. Parsons n
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018
1999 journal article
Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - I. Role of implanted BF2
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(8), 3070–3078.
Source: Web Of Science
Added: August 6, 2018
1999 journal article
Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - II. Role of implanted arsenic
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(8), 3079–3086.
Source: Web Of Science
Added: August 6, 2018
1999 journal article
Quality of selective silicon epitaxial films deposited using disilane and chlorine
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(6), 2337–2343.
Source: Web Of Science
Added: August 6, 2018
1999 article
Thermochemical stability of silicon-oxygen-carbon alloy thin films: A model system for chemical and structural relaxation at SiC-SiO2 interfaces
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 17, pp. 2170–2177.
Source: Web Of Science
Added: August 6, 2018
1998 article
Factors affecting two-dimensional dopant profiles obtained by transmission electron microscopy of etched p-n junctions in Si
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 16, pp. 471–475.
UN Sustainable Development Goal Categories
3. Good Health and Well-being
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
1998 journal article
Structure and properties of rapid thermal chemical vapor deposited polycrystalline silicon-germanium films on SiO2 using Si2H6, GeH4, and B2H6 gases
JOURNAL OF APPLIED PHYSICS, 83(10), 5469–5476.
UN Sustainable Development Goal Categories
14. Life Below Water
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
1997 journal article
Effects of Debye-Waller factors and compositional uncertainties on the 200 structure factor refinement in gamma-TiAl
PHILOSOPHICAL MAGAZINE LETTERS, 75(5), 261–270.
UN Sustainable Development Goal Categories
3. Good Health and Well-being
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
1997 journal article
Mapping two-dimensional arsenic distributions in silicon using dopant-selective chemical etching technique
JOURNAL OF APPLIED PHYSICS, 82(11), 5811–5815.
UN Sustainable Development Goal Categories
3. Good Health and Well-being
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
1997 journal article
Optimization of process conditions for selective silicon epitaxy using disilane, hydrogen, and chlorine
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(9), 3309–3315.
Source: Web Of Science
Added: August 6, 2018
1997 journal article
Precise and accurate refinements of the 220 structure factor for silicon by the systematic-row CBED method
ULTRAMICROSCOPY, 69(3), 169–183.
UN Sustainable Development Goal Categories
3. Good Health and Well-being
(Web of Science)
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
1997 journal article
Rapid thermal chemical vapor deposition of in situ boron doped polycrystalline silicon germanium films on silicon dioxide for complimentary metal oxide semiconductor applications
Applied Physics Letters, 71(23), 3388–3390.
Source: NC State University Libraries
Added: August 6, 2018
1993 journal article
CENTER FOR ADVANCED ELECTRONIC MATERIALS PROCESSING
PROCEEDINGS OF THE IEEE, 81(1), 42–59.
Source: Web Of Science
Added: August 6, 2018
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