Works (18)

Updated: July 5th, 2023 16:04

2006 journal article

A comparison of thickness values for very thin SiO2 films by using ellipsometric, capacitance-voltage, and HRTEM measurements

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153(1), F12–F19.

By: J. Ehrstein*, C. Richter*, D. Chandler-Horowitz*, E. Vogel*, C. Young n, S. Shah n, D. Maher n, B. Foran, P. Hung, A. Diebold

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2001 journal article

Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon

APPLIED SURFACE SCIENCE, 181(1-2), 78–93.

By: J. Chambers n, B. Busch*, W. Schulte*, T. Gustafsson*, E. Garfunkel*, S. Wang n, D. Maher n, T. Klein*, G. Parsons n

co-author countries: United States of America 🇺🇸

Contributors: J. Chambers n, B. Busch*, W. Schulte*, T. Gustafsson*, E. Garfunkel*, S. Wang n, D. Maher n, T. Klein*, G. Parsons n

author keywords: X-ray photoelectron spectroscopy; transmission electron microscopy; capacitance-voltage curve
Sources: Web Of Science, ORCID
Added: August 6, 2018

1999 journal article

A low-thermal-budget in situ doped multilayer silicon epitaxy process for MOSFET channel engineering

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(3), 1189–1196.

By: I. Ban*, M. Ozturk*, V. Misra*, J. Wortman*, D. Venables n & D. Maher n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

1999 journal article

Effects of oxygen during selective silicon epitaxial growth using disilane and chlorine

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(6), 2344–2352.

By: . PA O'Neil, M. Ozturk*, A. Batchelor*, M. Xu & D. Maher*

Source: Web Of Science
Added: August 6, 2018

1999 journal article

Effects of oxygen on selective silicon deposition using disilane

MATERIALS LETTERS, 38(6), 418–422.

By: . PA O'Neil, M. Ozturk n, A. Batchelor n & D. Maher n

co-author countries: United States of America 🇺🇸
author keywords: silicon; CVD; disilane; selective silicon deposition
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100)

APPLIED PHYSICS LETTERS, 75(25), 4001–4003.

By: T. Klein n, D. Niu n, W. Epling n, W. Li n, D. Maher n, C. Hobbs*, R. Hegde*, I. Baumvol*, G. Parsons n

co-author countries: Brazil 🇧🇷 United States of America 🇺🇸

Contributors: T. Klein n, D. Niu n, W. Epling n, W. Li n, D. Maher n, C. Hobbs*, R. Hegde*, I. Baumvol*, G. Parsons n

Sources: Web Of Science, ORCID
Added: August 6, 2018

1999 journal article

Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - I. Role of implanted BF2

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(8), 3070–3078.

By: . PA O'Neil, M. Ozturk*, A. Batchelor n, D. Venables n, M. Xu n & D. Maher n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - II. Role of implanted arsenic

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(8), 3079–3086.

By: . PA O'Neil, M. Ozturk*, A. Batchelor n, D. Venables n & D. Maher n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Quality of selective silicon epitaxial films deposited using disilane and chlorine

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(6), 2337–2343.

By: . PA O'Neil, M. Ozturk*, A. Batchelor*, M. Xu* & D. Maher*

Source: Web Of Science
Added: August 6, 2018

1999 article

Thermochemical stability of silicon-oxygen-carbon alloy thin films: A model system for chemical and structural relaxation at SiC-SiO2 interfaces

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 17, pp. 2170–2177.

By: D. Wolfe n, B. Hinds n, F. Wang n, G. Lucovsky n, B. Ward n, M. Xu n, R. Nemanich n, D. Maher n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1998 article

Factors affecting two-dimensional dopant profiles obtained by transmission electron microscopy of etched p-n junctions in Si

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 16, pp. 471–475.

By: S. Neogi, D. Venables, Z. Na & D. Maher

Source: Web Of Science
Added: August 6, 2018

1998 journal article

Structure and properties of rapid thermal chemical vapor deposited polycrystalline silicon-germanium films on SiO2 using Si2H6, GeH4, and B2H6 gases

JOURNAL OF APPLIED PHYSICS, 83(10), 5469–5476.

By: V. Li n, M. Mirabedini n, B. Hornung n, H. Heinisch n, M. Xu n, D. Batchelor n, D. Maher n, J. Wortman n, R. Kuehn n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Effects of Debye-Waller factors and compositional uncertainties on the 200 structure factor refinement in gamma-TiAl

PHILOSOPHICAL MAGAZINE LETTERS, 75(5), 261–270.

By: S. Swaminathan, I. Jones, D. Maher*, A. Johnson & H. Fraser

Source: Web Of Science
Added: August 6, 2018

1997 journal article

Mapping two-dimensional arsenic distributions in silicon using dopant-selective chemical etching technique

JOURNAL OF APPLIED PHYSICS, 82(11), 5811–5815.

By: S. Neogi*, D. Venables n, Z. Ma*, D. Maher n, M. Taylor* & S. Corcoran*

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Optimization of process conditions for selective silicon epitaxy using disilane, hydrogen, and chlorine

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(9), 3309–3315.

By: P. ONeil n, M. Ozturk n, K. Violette n, D. Batchelor n, K. Christensen n & D. Maher n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Precise and accurate refinements of the 220 structure factor for silicon by the systematic-row CBED method

ULTRAMICROSCOPY, 69(3), 169–183.

By: S. Swaminathan, S. Altynov*, I. Jones*, N. Zaluzec*, D. Maher n & H. Fraser*

co-author countries: United Kingdom of Great Britain and Northern Ireland 🇬🇧 United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Rapid thermal chemical vapor deposition of in situ boron doped polycrystalline silicon germanium films on silicon dioxide for complimentary metal oxide semiconductor applications

Applied Physics Letters, 71(23), 3388–3390.

By: V. Li n, M. Mirabedini n, R. Kuehn n, J. Wortman n, M. Ozturk n, D. Batchelor n, K. Christensen n, D. Maher n

co-author countries: United States of America 🇺🇸
Source: NC State University Libraries
Added: August 6, 2018

1993 journal article

CENTER FOR ADVANCED ELECTRONIC MATERIALS PROCESSING

PROCEEDINGS OF THE IEEE, 81(1), 42–59.

By: N. Masnari n, . Hauser n, G. Lucovsky n, D. Maher n, R. Markunas*, M. Ozturk n, J. Wortman n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

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