Works (18)
2005 article
A Comparison of Thickness Values for Very Thin SiO[sub 2] Films by Using Ellipsometric, Capacitance-Voltage, and HRTEM Measurements
Ehrstein, J., Richter, C., Chandler-Horowitz, D., Vogel, E., Young, C., Shah, S., … Diebold, A. (2005, December 21). Journal of The Electrochemical Society.
2001 article
Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon
Chambers, J. J., Busch, B. W., Schulte, W. H., Gustafsson, T., Garfunkel, E., Wang, S., … Parsons, G. N. (2001, September 1). Applied Surface Science, Vol. 181, pp. 78–93.
Contributors: J. Chambers n, B. Busch*, W. Schulte*, T. Gustafsson*, E. Garfunkel *, S. Wang n, n, T. Klein*, G. Parsons n
1999 article
A Low‐Thermal‐Budget In Situ Doped Multilayer Silicon Epitaxy Process for MOSFET Channel Engineering
Ban, I., Öztürk, M. C., Misra, V., Wortman, J. J., Venables, D., & Maher, D. M. (1999, March 1). Journal of The Electrochemical Society, Vol. 146, pp. 1189–1196.
1999 article
Effects of Oxygen during Selective Silicon Epitaxial Growth Using Disilane and Chlorine
O'Neil, P. A., Öztürk, M. C., Batchelor, A. D., Xu, M., & Maher, D. M. (1999, June 1). Journal of The Electrochemical Society.
1999 article
Effects of oxygen on selective silicon deposition using disilane
O'Neil, P. A., Öztürk, M. C., Batchelor, A. D., & Maher, D. M. (1999, March 1). Materials Letters.
1999 article
Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100)
Klein, T. M., Niu, D., Epling, W. S., Li, W., Maher, D. M., Hobbs, C. C., … Parsons, G. N. (1999, December 20). Applied Physics Letters, Vol. 75, pp. 4001–4003.
Contributors: T. Klein n, D. Niu n, W. Epling n, W. Li n, n, C. Hobbs*, R. Hegde*, I. Baumvol*, G. Parsons n
1999 article
Growth of Selective Silicon Epitaxy Using Disilane and Chlorine on Heavily Implanted Substrates: I. Role of Implanted BF 2
O'Neil, P. A., Öztürk, M. C., Batchelor, A. D., Venables, D., Xu, M., & Maher, D. M. (1999, August 1). Journal of The Electrochemical Society.
1999 article
Growth of Selective Silicon Epitaxy Using Disilane and Chlorine on Heavily Implanted Substrates: II. Role of Implanted Arsenic
O'Neil, P. A., Öztürk, M. C., Batchelor, A. D., Venables, D., & Maher, D. M. (1999, August 1). Journal of The Electrochemical Society.
1999 article
Quality of Selective Silicon Epitaxial Films Deposited Using Disilane and Chlorine
O'Neil, P. A., Öztürk, M. C., Batchelor, A. D., Xu, M., & Maher, D. M. (1999, June 1). Journal of The Electrochemical Society.
1999 article
Thermochemical stability of silicon–oxygen–carbon alloy thin films: A model system for chemical and structural relaxation at SiC–SiO2 interfaces
Wolfe, D. M., Hinds, B. J., Wang, F., Lucovsky, G., Ward, B. L., Xu, M., … Maher, D. M. (1999, July 1). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.
1998 article
Factors affecting two-dimensional dopant profiles obtained by transmission electron microscopy of etched p-n junctions in Si
Neogi, S. S., Venables, D., Na, Z., & Maher, D. M. (1998, January 1). Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena.
1998 article
Structure and properties of rapid thermal chemical vapor deposited polycrystalline silicon–germanium films on SiO2 using Si2H6, GeH4, and B2H6 gases
Li, V. Z.-Q., Mirabedini, M. R., Hornung, B. E., Heinisch, H. H., Xu, M., Batchelor, D., … Kuehn, R. T. (1998, May 15). Journal of Applied Physics.
1997 article
Effects of Debye-Waller factors and compositional uncertainties on the 200 structure factor refinement eta in-TiAl
Swaminathan, S., Jones, I. P., Maher, D. M., Johnson, A. W. S., & Fraser, H. L. (1997, May 1). Philosophical Magazine Letters.
1997 article
Mapping two-dimensional arsenic distributions in silicon using dopant-selective chemical etching technique
Neogi, S. S., Venables, D., Ma, Z., Maher, D. M., Taylor, M., & Corcoran, S. (1997, December 1). Journal of Applied Physics.
1997 article
Optimization of Process Conditions for Selective Silicon Epitaxy Using Disilane, Hydrogen, and Chlorine
O'Neil, P. A., Öztürk, M. C., Violette, K. E., Batchelor, D., Christensen, K., & Maher, D. M. (1997, September 1). Journal of The Electrochemical Society.
1997 article
Precise and accurate refinements of the 220 structure factor for silicon by the systematic-row CBED method
Swaminathan, S., Altynov, S., Jones, I. P., Zaluzec, N. J., Maher, D. M., & Fraser, H. L. (1997, October 1). Ultramicroscopy.
1997 article
Rapid thermal chemical vapor deposition of in situ boron-doped polycrystalline silicon-germanium films on silicon dioxide for complimentary-metal-oxide-semiconductor applications
Li, V. Z.-Q., Mirabedini, M. R., Kuehn, R. T., Wortman, J. J., Öztürk, M. C., Batchelor, D., … Maher, D. M. (1997, December 8). Applied Physics Letters.
1993 article
Cener for advanced electronic materials processing
Masnari, N. A., Hauser, J. R., Lucovsky, G., Maher, D. M., Markunas, R. J., Ozturk, M. C., & Wortman, J. J. (1993, January 1). Proceedings of the IEEE.