Works (20)

2012 | journal article

Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire

Physica Status Solidi. A, Applications and Materials Science, 209(3), 559–564.

By: K. Lai, T. Paskova, V. Wheeler, T. Chung, J. Grenko, M. Johnson, K. Udwary, E. Preble, K. Evans

Source: NC State University Libraries
Added: August 6, 2018

2011 | journal article

Comparative investigation of photoluminescence of In- and Si-doped GaN/A1GaN multi-quantum wells (Retraction of vol 97, pg 196, 2003)

Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 176(9), 772–772.

By: L. Wang, W. Sun, S. Chua & M. Johnson

Source: NC State University Libraries
Added: August 6, 2018

2011 | journal article

Epitaxial growth of lanthanide oxides La2O3 and Sc2O3 on GaN

Applied Physics Letters, 98(4).

Source: NC State University Libraries
Added: August 6, 2018

2011 | journal article

Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate

Semiconductor Science and Technology, 26(2).

By: Y. Wang, S. Alur, Y. Sharma, F. Tong, R. Thapa, P. Gartland, T. Issacs-Smith, C. Ahyi ...

Source: NC State University Libraries
Added: August 6, 2018

2010 | journal article

Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth

Journal of Crystal Growth, 312(7), 902–905.

By: K. Lai, T. Paskova, V. Wheeler, J. Grenko, M. Johnson, K. Udwary, E. Preble, K. Evans

Source: NC State University Libraries
Added: August 6, 2018

2010 | journal article

Optimization of homoepitaxially grown AlGaN/GaN heterostructures

Physica Status Solidi. A, Applications and Materials Science, 207(10), 2292–2299.

By: J. Grenko, C. Ebert, C. Reynolds, G. Duscher, D. Barlage, M. Johnson, E. Preble, T. Paskova, K. Evans

Source: NC State University Libraries
Added: August 6, 2018

2010 | journal article

An analytical model of source injection for N-type enhancement mode GaN-based Schottky Source/Drain MOSFET's with experimental demonstration

Solid-State Electronics, 54(12), 1680–1685.

By: J. Park, A. Ozbek, L. Ma, M. Veety, M. Morgensen, D. Barlage, V. Wheeler, M. Johnson

Source: NC State University Libraries
Added: August 6, 2018

2009 | journal article

Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates

Journal of Applied Physics, 106(11).

By: K. Lai, T. Paskova, V. Wheeler, J. Grenko, M. Johnson, D. Barlage, K. Udwary, E. Preble, K. Evans

Source: NC State University Libraries
Added: August 6, 2018

2007 | journal article

Transmission electron microscopy studies of regrown GaN Ohmic contacts on patterned substrates for metal oxide semiconductor field effect transistor applications

Applied Physics Letters, 90(20).

Source: NC State University Libraries
Added: August 6, 2018

2006 | journal article

Optical spectroscopic analysis of selected area epitaxially regrown n(+) gallium nitride

Journal of Applied Physics, 99(12).

By: D. Wang, M. Park, Y. Saripalli, M. Johnson, C. Zeng, D. Barlage, J. Long

Source: NC State University Libraries
Added: August 6, 2018

2006 | journal article

Properties of III-N MOS structures with low-temperature epitaxially regrown ohmic contacts

Journal of Crystal Growth, 287(2), 562–565.

By: Y. Saripalli, C. Zeng, J. Long, D. Barlage, M. Johnson & D. Braddock

Source: NC State University Libraries
Added: August 6, 2018

2019 | journal article

Fabrication of wafer scale, aligned sub-25 nm nanowire and nanowire templates using planar edge defined alternate layer process

Physica. E, Low-Dimensional Systems & Nanostructures, 28(2), 107–114.

Source: NC State University Libraries
Added: August 6, 2018

2003 | journal article

Comparative investigation of photoluminescence of In- and Si- doped GaN/AlGaN multi-quantum wells

Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 97(2), 196–199.

By: L. Wang, W. Sun, S. Chua & M. Johnson

Source: NC State University Libraries
Added: August 6, 2018

2003 | journal article

Planar gallium nitride ultraviolet optical modulator

Applied Physics Letters, 83(14), 2748–2750.

By: A. Oberhofer, J. Muth, M. Johnson, Z. Chen, E. Fleet & G. Cooper

Source: NC State University Libraries
Added: August 6, 2018

2002 | journal article

Electron-beam-induced optical memory effects in GaN

Applied Physics Letters, 80(15), 2675–2677.

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.2).

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.3).

By: Z. Yu, M. Johnson, J. Brown, N. El-Masry, J. Muth, J. Cook, J. Schetzina, K. Haberern, H. Kong, J. Edmond

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Pre-television stereotypes: Mexicans in US newsreels, 1919-1932

Critical Studies in Mass Communication, 16(4), 417–435.

By: M. Johnson

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Selective area metalorganic molecular-beam epitaxy of GaN and the growth of luminescent microcolumns on Si/SiO2

Applied Physics Letters, 75(4), 463–465.

By: S. Guha, N. Bojarczuk, M. Johnson & J. Schetzina

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

A critical comparison between MOVPE and MBE growth of III-V nitride semiconductor materials for opto-electronic device applications

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.10).

By: M. Johnson, Z. Yu, J. Brown, F. Koeck, N. El-Masry, H. Kong, J. Edmond, J. Cook, J. Schetzina

Source: NC State University Libraries
Added: August 6, 2018