Works (20)

Updated: July 5th, 2023 16:02

2012 journal article

Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 209(3), 559–564.

By: K. Lai n, T. Paskova n, V. Wheeler n, T. Chung*, J. Grenko n, M. Johnson n, K. Udwary*, E. Preble*, K. Evans*

co-author countries: Taiwan, Province of China 🇹🇼 United States of America 🇺🇸
author keywords: cathodoluminescence; MOCVD; quantum wells; TEM; RSM
Source: Web Of Science
Added: August 6, 2018

2011 article

Comparative investigation of photoluminescence of In- and Si-doped GaN/A1GaN multi-quantum wells (Retraction of Vol 97, Pg 196, 2003)

Wang, L. S., Sun, W. H., Chua, S. J., & Johnson, M. (2011, May 25). MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, Vol. 176, pp. 772–772.

By: L. Wang*, W. Sun*, S. Chua* & M. Johnson n

co-author countries: Singapore 🇸🇬 United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2011 journal article

Epitaxial growth of lanthanide oxides La2O3 and Sc2O3 on GaN

APPLIED PHYSICS LETTERS, 98(4).

By: J. Jur n, V. Wheeler n, D. Lichtenwalner n, J. Maria n & M. Johnson n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2010 journal article

An analytical model of source injection for N-type enhancement mode GaN-based Schottky Source/Drain MOSFET's with experimental demonstration

SOLID-STATE ELECTRONICS, 54(12), 1680–1685.

By: J. Park n, A. Ozbek n, L. Ma n, M. Veety n, M. Morgensen n, D. Barlage n, V. Wheeler n, M. Johnson n

co-author countries: United States of America 🇺🇸
author keywords: GaN; MOSFET; Schottky Source/Drain; Schottky barrier; Gate to Source overlap structure; Gate induced Schottky barrier lowering
Source: Web Of Science
Added: August 6, 2018

2010 journal article

Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth

JOURNAL OF CRYSTAL GROWTH, 312(7), 902–905.

By: K. Lai n, T. Paskova n, V. Wheeler n, J. Grenko n, M. Johnson n, K. Udwary*, E. Preble*, K. Evans*

co-author countries: United States of America 🇺🇸
author keywords: Metalorganic chemical vapor deposition; Nitrides; Semiconducting III-V materials; Light emitting diodes
Source: Web Of Science
Added: August 6, 2018

2010 journal article

Optimization of homoepitaxially grown AlGaN/GaN heterostructures

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 207(10), 2292–2299.

By: J. Grenko n, C. Ebert*, C. Reynolds n, G. Duscher*, D. Barlage n, M. Johnson n, E. Preble*, T. Paskova*, K. Evans*

co-author countries: United States of America 🇺🇸
author keywords: AlGaN; GaN; heterostructures; mobility; MOCVD; two-dimensional electron gas
Source: Web Of Science
Added: August 6, 2018

2010 journal article

Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate

Semiconductor Science and Technology, 26(2), 022002.

By: Y. Wang*, S. Alur*, Y. Sharma*, F. Tong*, R. Thapa*, P. Gartland*, T. Issacs-Smith*, C. Ahyi* ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, Crossref
Added: August 6, 2018

2009 journal article

Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates

JOURNAL OF APPLIED PHYSICS, 106(11).

By: K. Lai n, T. Paskova n, V. Wheeler n, J. Grenko n, M. Johnson n, D. Barlage n, K. Udwary*, E. Preble*, K. Evans*

co-author countries: United States of America 🇺🇸
author keywords: cathodoluminescence; gallium compounds; III-V semiconductors; indium compounds; quantum confined Stark effect; semiconductor quantum wells; spectral line intensity; spectral line shift; wide band gap semiconductors
Source: Web Of Science
Added: August 6, 2018

2007 journal article

Transmission electron microscopy studies of regrown GaN Ohmic contacts on patterned substrates for metal oxide semiconductor field effect transistor applications

APPLIED PHYSICS LETTERS, 90(20).

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2006 journal article

Optical spectroscopic analysis of selected area epitaxially regrown n(+) gallium nitride

JOURNAL OF APPLIED PHYSICS, 99(12).

By: D. Wang*, M. Park*, Y. Saripalli n, M. Johnson n, C. Zeng n, D. Barlage n, J. Long n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2006 article

Properties of III-N MOS structures with low-temperature epitaxially regrown ohmic contacts

Saripalli, Y. N., Zeng, C., Long, J. P., Barlage, D. W., Johnson, M. A. L., & Braddock, D. (2006, January 25). JOURNAL OF CRYSTAL GROWTH, Vol. 287, pp. 562–565.

By: Y. Saripalli n, C. Zeng n, J. Long n, D. Barlage n, M. Johnson n & D. Braddock

co-author countries: United States of America 🇺🇸
author keywords: ohmic contacts; MOVPE; selected area re-growth; GaN; MOSFET
Source: Web Of Science
Added: August 6, 2018

2005 journal article

Fabrication of wafer scale, aligned sub-25 nm nanowire and nanowire templates using planar edge defined alternate layer process

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 28(2), 107–114.

By: . Sonkusale n, C. Amsinck n, D. Nackashi n, N. Di Spigna n, D. Barlage n, M. Johnson n, P. Franzon n

co-author countries: United States of America 🇺🇸
author keywords: nanowire; nanoimprinting; mold; template; interconnects; nanotechnology
Sources: Web Of Science, ORCID
Added: August 6, 2018

2003 journal article

Comparative investigation of photoluminescence of In- and Si- doped GaN/AlGaN multi-quantum wells

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 97(2), 196–199.

By: L. Wang*, W. Sun*, S. Chua* & M. Johnson n

co-author countries: Singapore 🇸🇬 United States of America 🇺🇸
author keywords: GaN/AlGaN multiquantum wells; photoluminescence; indium and silicon doings
Source: Web Of Science
Added: August 6, 2018

2003 journal article

Planar gallium nitride ultraviolet optical modulator

APPLIED PHYSICS LETTERS, 83(14), 2748–2750.

By: A. Oberhofer n, J. Muth n, M. Johnson n, Z. Chen*, E. Fleet* & G. Cooper*

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2002 journal article

Electron-beam-induced optical memory effects in GaN

APPLIED PHYSICS LETTERS, 80(15), 2675–2677.

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1999 journal article

A critical comparison between MOVPE and MBE growth of III-V nitride semiconductor materials for opto-electronic device applications

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.10).

By: M. Johnson n, Z. Yu n, J. Brown n, F. Koeck n, N. El-Masry n, H. Kong*, J. Edmond*, J. Cook n, J. Schetzina n

co-author countries: United States of America 🇺🇸
Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.2).

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.3).

By: Z. Yu n, M. Johnson n, J. Brown n, N. El-Masry n, J. Muth n, J. Cook n, J. Schetzina n, K. Haberern*, H. Kong*, J. Edmond*

co-author countries: United States of America 🇺🇸
Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Pre-television stereotypes: Mexicans in US newsreels, 1919-1932

CRITICAL STUDIES IN MASS COMMUNICATION, 16(4), 417–435.

By: M. Johnson n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Selective area metalorganic molecular-beam epitaxy of GaN and the growth of luminescent microcolumns on Si/SiO2

APPLIED PHYSICS LETTERS, 75(4), 463–465.

By: S. Guha*, N. Bojarczuk*, M. Johnson n & J. Schetzina n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

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