2011 article
Comparative investigation of photoluminescence of In- and Si-doped GaN/A1GaN multi-quantum wells (Retraction of Vol 97, Pg 196, 2003)
Wang, L. S., Sun, W. H., Chua, S. J., & Johnson, M. (2011, May 25). MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, Vol. 176, pp. 772–772.
2011 journal article
Epitaxial growth of lanthanide oxides La2O3 and Sc2O3 on GaN
APPLIED PHYSICS LETTERS, 98(4).
2011 journal article
Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 209(3), 559–564.
2010 journal article
An analytical model of source injection for N-type enhancement mode GaN-based Schottky Source/Drain MOSFET's with experimental demonstration
SOLID-STATE ELECTRONICS, 54(12), 1680–1685.
2010 journal article
Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth
JOURNAL OF CRYSTAL GROWTH, 312(7), 902–905.
2010 journal article
Optimization of homoepitaxially grown AlGaN/GaN heterostructures
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 207(10), 2292–2299.
2010 journal article
Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate
Semiconductor Science and Technology, 26(2), 022002.
2009 journal article
Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates
JOURNAL OF APPLIED PHYSICS, 106(11).
2007 journal article
Transmission electron microscopy studies of regrown GaN Ohmic contacts on patterned substrates for metal oxide semiconductor field effect transistor applications
APPLIED PHYSICS LETTERS, 90(20).
2006 journal article
Optical spectroscopic analysis of selected area epitaxially regrown n(+) gallium nitride
JOURNAL OF APPLIED PHYSICS, 99(12).
2005 journal article
Fabrication of wafer scale, aligned sub-25 nm nanowire and nanowire templates using planar edge defined alternate layer process
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 28(2), 107–114.
2005 article
Properties of III-N MOS structures with low-temperature epitaxially regrown ohmic contacts
Saripalli, Y. N., Zeng, C., Long, J. P., Barlage, D. W., Johnson, M. A. L., & Braddock, D. (2006, January 25). JOURNAL OF CRYSTAL GROWTH, Vol. 287, pp. 562–565.
2003 journal article
Comparative investigation of photoluminescence of In- and Si- doped GaN/AlGaN multi-quantum wells
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 97(2), 196–199.
2003 journal article
Planar gallium nitride ultraviolet optical modulator
APPLIED PHYSICS LETTERS, 83(14), 2748–2750.
2002 journal article
Electron-beam-induced optical memory effects in GaN
APPLIED PHYSICS LETTERS, 80(15), 2675–2677.
1999 journal article
A critical comparison between MOVPE and MBE growth of III-V nitride semiconductor materials for opto-electronic device applications
MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.10).
1999 journal article
Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys
MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.2).
1999 journal article
Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates
MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.3).
1999 journal article
Pre-television stereotypes: Mexicans in US newsreels, 1919-1932
CRITICAL STUDIES IN MASS COMMUNICATION, 16(4), 417–435.
1999 journal article
Selective area metalorganic molecular-beam epitaxy of GaN and the growth of luminescent microcolumns on Si/SiO2
APPLIED PHYSICS LETTERS, 75(4), 463–465.
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