Mark A. L. Johnson

Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 209(3), 559–564.

Comparative investigation of photoluminescence of In- and Si-doped GaN/A1GaN multi-quantum wells (Retraction of Vol 97, Pg 196, 2003)

Wang, L. S., Sun, W. H., Chua, S. J., & Johnson, M. (2011, May 25). MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, Vol. 176, pp. 772–772.

Epitaxial growth of lanthanide oxides La2O3 and Sc2O3 on GaN

APPLIED PHYSICS LETTERS, 98(4).

An analytical model of source injection for N-type enhancement mode GaN-based Schottky Source/Drain MOSFET's with experimental demonstration

SOLID-STATE ELECTRONICS, 54(12), 1680–1685.

Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth

JOURNAL OF CRYSTAL GROWTH, 312(7), 902–905.

Optimization of homoepitaxially grown AlGaN/GaN heterostructures

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 207(10), 2292–2299.

Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate

Semiconductor Science and Technology, 26(2), 022002.

Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates

JOURNAL OF APPLIED PHYSICS, 106(11).

Transmission electron microscopy studies of regrown GaN Ohmic contacts on patterned substrates for metal oxide semiconductor field effect transistor applications

APPLIED PHYSICS LETTERS, 90(20).

Optical spectroscopic analysis of selected area epitaxially regrown n(+) gallium nitride

JOURNAL OF APPLIED PHYSICS, 99(12).

Properties of III-N MOS structures with low-temperature epitaxially regrown ohmic contacts

Saripalli, Y. N., Zeng, C., Long, J. P., Barlage, D. W., Johnson, M. A. L., & Braddock, D. (2006, January 25). JOURNAL OF CRYSTAL GROWTH, Vol. 287, pp. 562–565.

Fabrication of wafer scale, aligned sub-25 nm nanowire and nanowire templates using planar edge defined alternate layer process

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 28(2), 107–114.

Comparative investigation of photoluminescence of In- and Si- doped GaN/AlGaN multi-quantum wells

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 97(2), 196–199.

Planar gallium nitride ultraviolet optical modulator

APPLIED PHYSICS LETTERS, 83(14), 2748–2750.

Electron-beam-induced optical memory effects in GaN

APPLIED PHYSICS LETTERS, 80(15), 2675–2677.

A critical comparison between MOVPE and MBE growth of III-V nitride semiconductor materials for opto-electronic device applications

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.10).

Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.2).

Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.3).

Pre-television stereotypes: Mexicans in US newsreels, 1919-1932

CRITICAL STUDIES IN MASS COMMUNICATION, 16(4), 417–435.

Selective area metalorganic molecular-beam epitaxy of GaN and the growth of luminescent microcolumns on Si/SiO2

APPLIED PHYSICS LETTERS, 75(4), 463–465.