Mark A. L. Johnson

Lai, K. Y., Paskova, T., Wheeler, V. D., Chung, T. Y., Grenko, J. A., Johnson, M. A. L., … Evans, K. R. (2012). Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 209(3), 559–564. https://doi.org/10.1002/pssa.201127345

Wang, L. S., Sun, W. H., Chua, S. J., & Johnson, M. (2011, May 25). Comparative investigation of photoluminescence of In- and Si-doped GaN/A1GaN multi-quantum wells (Retraction of Vol 97, Pg 196, 2003). MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, Vol. 176, pp. 772–772. https://doi.org/10.1016/j.mseb.2011.03.009

Jur, J. S., Wheeler, V. D., Lichtenwalner, D. J., Maria, J.-P., & Johnson, M. A. L. (2011). Epitaxial growth of lanthanide oxides La2O3 and Sc2O3 on GaN. APPLIED PHYSICS LETTERS, 98(4). https://doi.org/10.1063/1.3541883

Park, J., Ozbek, A. M., Ma, L., Veety, M. T., Morgensen, M. P., Barlage, D. W., … Johnson, M. A. L. (2010). An analytical model of source injection for N-type enhancement mode GaN-based Schottky Source/Drain MOSFET's with experimental demonstration. SOLID-STATE ELECTRONICS, 54(12), 1680–1685. https://doi.org/10.1016/j.sse.2010.06.013

Lai, K. Y., Paskova, T., Wheeler, V. D., Grenko, J. A., Johnson, M. A. L., Udwary, K., … Evans, K. R. (2010). Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth. JOURNAL OF CRYSTAL GROWTH, 312(7), 902–905. https://doi.org/10.1016/j.jcrysgro.2010.01.020

Grenko, J. A., Ebert, C. W., Reynolds, C. L., Jr., Duscher, G. J., Barlage, D. W., Johnson, M. A. L., … Evans, K. R. (2010). Optimization of homoepitaxially grown AlGaN/GaN heterostructures. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 207(10), 2292–2299. https://doi.org/10.1002/pssa.200925508

Wang, Y., Alur, S., Sharma, Y., Tong, F., Thapa, R., Gartland, P., … Evans, K. R. (2010). Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate. Semiconductor Science and Technology, 26(2), 022002. https://doi.org/10.1088/0268-1242/26/2/022002

Lai, K. Y., Paskova, T., Wheeler, V. D., Grenko, J. A., Johnson, M. A. L., Barlage, D. W., … Evans, K. R. (2009). Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates. JOURNAL OF APPLIED PHYSICS, 106(11). https://doi.org/10.1063/1.3264729

Saripalli, Y. N., Pei, L., Biggerstaff, T., Ramachandran, S., Duscher, G. J., Johnson, M. A. L., … Barlage, D. W. (2007). Transmission electron microscopy studies of regrown GaN Ohmic contacts on patterned substrates for metal oxide semiconductor field effect transistor applications. APPLIED PHYSICS LETTERS, 90(20). https://doi.org/10.1063/1.2741123

Wang, D., Park, M., Saripalli, Y. N., Johnson, M. A. L., Zeng, C., Barlage, D. W., & Long, J. P. (2006). Optical spectroscopic analysis of selected area epitaxially regrown n(+) gallium nitride. JOURNAL OF APPLIED PHYSICS, 99(12). https://doi.org/10.1063/1.2204755

Saripalli, Y. N., Zeng, C., Long, J. P., Barlage, D. W., Johnson, M. A. L., & Braddock, D. (2006, January 25). Properties of III-N MOS structures with low-temperature epitaxially regrown ohmic contacts. JOURNAL OF CRYSTAL GROWTH, Vol. 287, pp. 562–565. https://doi.org/10.1016/j.jcrysgro.2005.10.075

Sonkusale, SR, Amsinck, C. J., Nackashi, D. P., Di Spigna, N. H., Barlage, D., Johnson, M., & Franzon, P. D. (2005). Fabrication of wafer scale, aligned sub-25 nm nanowire and nanowire templates using planar edge defined alternate layer process. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 28(2), 107–114. https://doi.org/10.1016/j.physe.2005.01.010

Wang, L. S., Sun, W. H., Chua, S. J., & Johnson, M. (2003). Comparative investigation of photoluminescence of In- and Si- doped GaN/AlGaN multi-quantum wells. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 97(2), 196–199. https://doi.org/10.1016/s0921-5107(02)00572-x

Oberhofer, A. E., Muth, J. F., Johnson, M. A. L., Chen, Z. Y., Fleet, E. F., & Cooper, G. D. (2003). Planar gallium nitride ultraviolet optical modulator. APPLIED PHYSICS LETTERS, 83(14), 2748–2750. https://doi.org/10.1063/1.1615675

Chang, Y. C., Cai, A. L., Johnson, M. A. L., Muth, J. F., Kolbas, R. M., Reitmeier, Z. J., … Davis, R. F. (2002). Electron-beam-induced optical memory effects in GaN. APPLIED PHYSICS LETTERS, 80(15), 2675–2677. https://doi.org/10.1063/1.1469222

Johnson, M. A. L., Yu, Z. H., Brown, J. D., Koeck, F. A., El-Masry, N. A., Kong, H. S., … Schetzina, J. F. (1999). A critical comparison between MOVPE and MBE growth of III-V nitride semiconductor materials for opto-electronic device applications. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.10). https://doi.org/10.1557/s1092578300003100

Muth, J. F., Brown, J. D., Johnson, M. A. L., Yu, Z. H., Kolbas, R. M., Cook, J. W., & Schetzina, J. F. (1999). Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.2).

Yu, Z. H., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Muth, J. F., Cook, J. W., … Edmond, J. S. (1999). Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.3). https://doi.org/10.1557/s1092578300002878

Johnson, M. A. (1999). Pre-television stereotypes: Mexicans in US newsreels, 1919-1932. CRITICAL STUDIES IN MASS COMMUNICATION, 16(4), 417–435. https://doi.org/10.1080/15295039909367109

Guha, S., Bojarczuk, N. A., Johnson, M. A. L., & Schetzina, J. F. (1999). Selective area metalorganic molecular-beam epitaxy of GaN and the growth of luminescent microcolumns on Si/SiO2. APPLIED PHYSICS LETTERS, 75(4), 463–465. https://doi.org/10.1063/1.124409