1998 conference paper
Evaluation and comparison of 3.0 nm gate-stack dielectrics for tenth-micron technology NMOSFETs
Rapid thermal and integrated processing VII: Symposium held April 13-15, 1998, San Francisco, California, U.S.A. (Materials Research Society symposium proceedings ; v.525), 157β162. Warrendale, Pennsylvania: Materials Research Society.
1998 article
Evaluation of 2.0 nm grown and deposited dielectrics in 0.1 mu m PMOSFETs
RAPID THERMAL AND INTEGRATED PROCESSING VII, Vol. 525, pp. 163β170.
1998 journal article
Parasitic resistance considerations of using elevated source/drain technology for deep submicron metal oxide semiconductor field effect transistors
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 145(6), 2131β2137.
1997 conference paper
A 0.18 ?m CMOS technology for elevated source/drain MOSFETs using selective silicon epitaxy
ULSI science and technology/1997: Proceedings of the Sixth International Symposium on UltraLarge Scale Integration Science and Technology (Proceedings (Electrochemical Society); v. 97-3), 571β585. Pennington, NJ: Electrochemical Society.
1997 journal article
A comparative study of n(+)/p junction formation for deep submicron elevated source/drain metal oxide semiconductor field effect transistors
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(10), 3659β3664.
1997 conference paper
Parasitic resistance considerations of using elevated source/drain for deep submicron MOSFET technology
ULSI science and technology/1997: Proceedings of the Sixth International Symposium on UltraLarge Scale Integration Science and Technology (Proceedings (Electrochemical Society); v. 97-3), 587β597. Pennington, NJ: Electrochemical Society.
1997 journal article
The effect of the elevated source drain doping profile on performance and reliability of deep submicron MOSFET's
IEEE TRANSACTIONS ON ELECTRON DEVICES, 44(9), 1491β1498.
1996 article
Sub-half micron elevated source/drain NMOSFETs by low temperature selective epitaxial deposition
RAPID THERMAL AND INTEGRATED PROCESSING V, Vol. 429, pp. 343β347.
1995 journal article
Effects of profile doped elevated source/drain structures on deep-submicron MOSFETs
Solid-State Electronics, 38(3), 573β579.
1994 journal article
An evaluation of super-steep-retrograde channel doping for deep-submicron MOSFET applications
IEEE Transactions on Electron Devices, 41(10), 1880β1882.
1994 article
SINGLE-WAFER PROCESS INTEGRATION FOR SUBMICRON STRUCTURES
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 12, pp. 2749β2751.
1993 journal article
CENTER FOR ADVANCED ELECTRONIC MATERIALS PROCESSING
PROCEEDINGS OF THE IEEE, 81(1), 42β59.