@article{neumann_kara_sargolzaeiaval_im_ma_yang_ozturk_dickey_2021, title={Aerosol Spray Deposition of Liquid Metal and Elastomer Coatings for Rapid Processing of Stretchable Electronics}, volume={12}, ISBN={2072-666X}, DOI={10.3390/mi12020146}, number={2}, journal={MICROMACHINES}, author={Neumann, Taylor V. and Kara, Berra and Sargolzaeiaval, Yasaman and Im, Sooik and Ma, Jinwoo and Yang, Jiayi and Ozturk, Mehmet C. and Dickey, Michael D.}, year={2021}, month={Feb} }
 @article{vallem_sargolzaeiaval_ozturk_lai_dickey_2021, title={Energy Harvesting and Storage with Soft and Stretchable Materials}, ISBN={1521-4095}, DOI={10.1002/adma.202004832}, journal={ADVANCED MATERIALS}, author={Vallem, Veenasri and Sargolzaeiaval, Yasaman and Ozturk, Mehmet and Lai, Ying-Chih and Dickey, Michael D.}, year={2021} }
 @article{padmanabhan ramesh_sargolzaeiaval_neumann_misra_vashaee_dickey_ozturk_2021, title={Flexible thermoelectric generator with liquid metal interconnects and low thermal conductivity silicone filler}, volume={5}, ISBN={2397-4621}, DOI={10.1038/s41528-021-00101-3}, number={1}, journal={NPJ FLEXIBLE ELECTRONICS}, author={Padmanabhan Ramesh, Viswanath and Sargolzaeiaval, Yasaman and Neumann, Taylor and Misra, Veena and Vashaee, Daryoosh and Dickey, Michael D. and Ozturk, Mehmet C.}, year={2021} }
 @article{heidari_ozturk_ghannam_law_khanbareh_miah_2021, title={IEEE ACCESS SPECIAL SECTION EDITORIAL: ENERGY HARVESTING TECHNOLOGIES FOR WEARABLE AND IMPLANTABLE DEVICES}, DOI={10.1109/ACCESS.2021.3088622}, journal={IEEE ACCESS}, author={Heidari, Hadi and Ozturk, Mehmet and Ghannam, Rami and Law, Man-Kay and Khanbareh, Hamideh and Miah, Abdul Halim}, year={2021} }
 @article{sargolzaeiaval_ramesh_neumann_misra_vashaee_dickey_ozturk_2020, title={Flexible thermoelectric generators for body heat harvesting - Enhanced device performance using high thermal conductivity elastomer encapsulation on liquid metal interconnects}, volume={262}, ISBN={1872-9118}, DOI={10.1016/j.apenergy.2019.114370}, journal={APPLIED ENERGY}, author={Sargolzaeiaval, Yasaman and Ramesh, Viswanath Padmanabhan and Neumann, Taylor V and Misra, Veena and Vashaee, Daryoosh and Dickey, Michael D. and Ozturk, Mehmet C.}, year={2020} }
 @misc{nozariasbmarz_collins_dsouza_polash_hosseini_hyland_liu_malhotra_ortiz_mohaddes_et al._2020, title={Review of wearable thermoelectric energy harvesting: From body temperature to electronic systems}, volume={258}, ISBN={1872-9118}, DOI={10.1016/j.apenergy.2019.114069}, journal={APPLIED ENERGY}, author={Nozariasbmarz, Amin and Collins, Henry and Dsouza, Kelvin and Polash, Mobarak Hossain and Hosseini, Mahshid and Hyland, Melissa and Liu, Jie and Malhotra, Abhishek and Ortiz, Francisco Matos and Mohaddes, Farzad and et al.}, year={2020} }
 @article{nozariasbmarz_suarez_dycus_cabral_lebeau_ozturk_vashaee_2020, title={Thermoelectric generators for wearable body heat harvesting: Material and device concurrent optimization}, volume={67}, ISBN={2211-3282}, DOI={10.1016/j.nanoen.2019.104265}, journal={NANO ENERGY}, author={Nozariasbmarz, Amin and Suarez, Francisco and Dycus, J. Houston and Cabral, Matthew J. and LeBeau, James M. and Ozturk, Mehmet C. and Vashaee, Daryoosh}, year={2020}, month={Jan} }
 @article{sargolzaeiaval_ramesh_neumann_miles_dickey_ozturk_2019, title={High Thermal Conductivity Silicone Elastomer Doped with Graphene Nanoplatelets and Eutectic GaIn Liquid Metal Alloy}, volume={8}, ISBN={2162-8769}, DOI={10.1149/2.0271906jss}, number={6}, journal={ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY}, author={Sargolzaeiaval, Yasaman and Ramesh, Viswanath Padmanabhan and Neumann, Taylor V. and Miles, Rebecca and Dickey, Michael D. and Ozturk, Mehmet C.}, year={2019}, pages={P357–P362} }
 @article{suarez_parekh_ladd_vashaee_dickey_öztürk_2017, title={Flexible thermoelectric generator using bulk legs and liquid metal interconnects for wearable electronics}, volume={202}, ISSN={0306-2619}, url={http://dx.doi.org/10.1016/J.APENERGY.2017.05.181}, DOI={10.1016/J.APENERGY.2017.05.181}, journal={Applied Energy}, publisher={Elsevier BV}, author={Suarez, Francisco and Parekh, Dishit P. and Ladd, Collin and Vashaee, Daryoosh and Dickey, Michael D. and Öztürk, Mehmet C.}, year={2017}, month={Sep}, pages={736–745} }
 @misc{nozariasbmarz_agarwal_coutant_hall_liu_liu_malhotra_norouzzadeh_ozturk_ramesh_et al._2017, title={Thermoelectric silicides: A review}, volume={56}, DOI={10.7567/jjap.56.05da04}, number={5}, journal={Japanese Journal of Applied Physics}, author={Nozariasbmarz, A. and Agarwal, A. and Coutant, Z. A. and Hall, M. J. and Liu, J. and Liu, R. and Malhotra, A. and Norouzzadeh, P. and Ozturk, M. C. and Ramesh, V. P. and et al.}, year={2017} }
 @article{suarez_nozariasbmarz_vashaee_ozturk_2016, title={Designing thermoelectric generators for self-powered wearable electronics}, volume={9}, DOI={10.1039/c6ee00456c}, number={6}, journal={Energy & Environmental Science}, author={Suarez, F. and Nozariasbmarz, A. and Vashaee, D. and Ozturk, M. C.}, year={2016}, pages={2099–2113} }
 @article{gurarslan_yu_su_yu_suarez_yao_zhu_ozturk_zhang_cao_2014, title={Surface-energy-assisted perfect transfer of centimeter-scale mono layer and few-layer MoS2 films onto Arbitrary Substrates}, volume={8}, DOI={10.1021/nn5057673}, number={11}, journal={ACS Nano}, author={Gurarslan, A. and Yu, Y. F. and Su, L. Q. and Yu, Y. L. and Suarez, F. and Yao, S. and Zhu, Y. and Ozturk, M. and Zhang, Y. and Cao, L. Y.}, year={2014}, pages={11522–11528} }
 @article{dhawan_du_batchelor_wang_leonard_misra_ozturk_gerhold_tuan_2011, title={Hybrid top-down and bottom-up fabrication approach for wafer-scale plasmonic nanoplatforms}, volume={7}, DOI={10.1002/smll.201002186}, number={6}, journal={Small (Weinheim An Der Bergstrasse, Germany)}, author={Dhawan, A. and Du, Y. and Batchelor, D. and Wang, H. N. and Leonard, D. and Misra, V. and Ozturk, M. and Gerhold, M. D. and Tuan, V. D.}, year={2011}, pages={727–731} }
 @article{alptekin_ozturk_2010, title={NixPt1-xSi/n-Si contacts with sub-0.1 eV effective Schottky barrier heights obtained by sulfur segregation}, volume={87}, DOI={10.1016/j.mee.2010.04.008}, number={11}, journal={Microelectronic Engineering}, author={Alptekin, E. and Ozturk, M. C.}, year={2010}, pages={2358–2360} }
 @article{alptekin_ozturk_2010, title={Ultrahigh vacuum chemical vapor deposition of doped and intrinsic Si1-xCx epitaxy from disilane, trimethylsilane, and phosphine}, volume={157}, DOI={10.1149/1.3414167}, number={6}, journal={Journal of the Electrochemical Society}, author={Alptekin, E. and Ozturk, M. C.}, year={2010}, pages={H699–704} }
 @article{alptekin_ozturk_misra_cho_kim_chopra_2009, title={Erbium silicide formation on Si1-xCx epitaxial layers}, volume={156}, DOI={10.1149/1.3097189}, number={5}, journal={Journal of the Electrochemical Society}, author={Alptekin, E. and Ozturk, M. C. and Misra, V. and Cho, Y. and Kim, Y. and Chopra, S.}, year={2009}, pages={H378–383} }
 @article{alptekin_kirkpatrick_misra_ozturk_2009, title={Platinum germanosilicide contacts formed on strained and relaxed Si1-xGex layers}, volume={56}, DOI={10.1109/TED.2009.2018159}, number={6}, journal={IEEE Transactions on Electron Devices}, author={Alptekin, E. and Kirkpatrick, C. J. and Misra, V. and Ozturk, M. C.}, year={2009}, pages={1220–1227} }
 @article{alptekin_ozturk_misra_2009, title={Schottky barrier height of erbium silicide on Si1-xCx}, volume={30}, DOI={10.1109/LED.2009.2026297}, number={9}, journal={IEEE Electron Device Letters}, author={Alptekin, E. and Ozturk, M. C. and Misra, V.}, year={2009}, pages={949–951} }
 @article{alptekin_ozturk_2009, title={Schottky barrier height of nickel silicide contacts formed on Si1-xCx epitaxial layers}, volume={30}, DOI={10.1109/LED.2009.2034114}, number={12}, journal={IEEE Electron Device Letters}, author={Alptekin, E. and Ozturk, M. C.}, year={2009}, pages={1320–1322} }
 @article{alptekin_ozturk_2009, title={Tuning of the nickel silicide schottky barrier height on P-type silicon by indium implantation}, volume={30}, DOI={10.1109/LED.2009.2033451}, number={12}, journal={IEEE Electron Device Letters}, author={Alptekin, E. and Ozturk, M. C.}, year={2009}, pages={1272–1274} }
 @article{alptekin_ozturk_misra_2009, title={Tuning of the platinum silicide schottky barrier height on n-type silicon by sulfur segregation}, volume={30}, DOI={10.1109/LED.2009.2014182}, number={4}, journal={IEEE Electron Device Letters}, author={Alptekin, E. and Ozturk, M. C. and Misra, V.}, year={2009}, pages={331–333} }
 @misc{ozturk_misra_chopra_2007, title={Methods of fabricating strained semiconductor-on-insulator field-effect transistors and related devices}, volume={7,211,458}, number={2007 May 1}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Ozturk, M. and Misra, V. and Chopra, S.}, year={2007} }
 @misc{zhang_misra_bedair_ozturk_2007, title={Optoelectonic devices having arrays of quantum-dot compound semiconductor superlattices therein}, volume={7,265,375}, number={2007 Sept. 4}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Zhang, Z.-B. and Misra, V. and Bedair, S. M. A. and Ozturk, M.}, year={2007} }
 @article{zhao_duscher_rozgonyi_zikry_chopra_ozturk_2007, title={Quantitative nanoscale local strain profiling in embedded SiGe metal-oxide-semiconductor structures}, volume={90}, DOI={10.1063/1.2738188}, number={19}, journal={Applied Physics Letters}, author={Zhao, W. and Duscher, G. and Rozgonyi, G. and Zikry, M. A. and Chopra, S. and Ozturk, M. C.}, year={2007} }
 @article{chopra_ozturk_misra_ren_mcneil_2007, title={The effects of nickel germanosilicide contacts on the biaxial compressive stress in thin epitaxial silicon-germanium alloys on silicon}, volume={91}, DOI={10.1063/1.2795346}, number={14}, journal={Applied Physics Letters}, author={Chopra, S. and Ozturk, M. C. and Misra, V. and Ren, Z. Q. and McNeil, L. E.}, year={2007} }
 @article{chopra_ozturk_misra_mcguire_mcneil_2006, title={Analysis of boron strain compensation in silicon-germanium alloys by Raman spectroscopy}, volume={88}, DOI={10.1063/1.2205752}, number={20}, journal={Applied Physics Letters}, author={Chopra, S. and Ozturk, M. C. and Misra, V. and McGuire, K. and McNeil, L. E.}, year={2006} }
 @article{chopra_ozturk_misra_mcguire_mcneil_2006, title={Critical thickness of heavily boron-doped silicon-germanium alloys}, volume={89}, DOI={10.1063/1.2374870}, number={20}, journal={Applied Physics Letters}, author={Chopra, S. and Ozturk, M. C. and Misra, V. and McGuire, K. and McNeil, L. E.}, year={2006} }
 @article{liu_ozturk_2005, title={Effects of heavy boron doping on the valence band offset at the Si1-xGex/Si interface and Si1-xGex band gap}, volume={87}, DOI={10.1063/1.2149295}, number={25}, journal={Applied Physics Letters}, author={Liu, J. and Ozturk, M. C.}, year={2005} }
 @article{lin_ozturk_chen_rhee_lee_misra_2005, title={Impact of Ge on integration of HfO2 and metal gate electrodes on strained Si channels}, volume={87}, DOI={10.1063/1.2009809}, number={7}, journal={Applied Physics Letters}, author={Lin, Y. X. and Ozturk, M. C. and Chen, B. and Rhee, S. J. and Lee, J. C. and Misra, V.}, year={2005} }
 @article{rying_ozturk_bilbro_lu_2005, title={In situ selectivity and thickness monitoring during selective silicon epitaxy using quadrupole mass spectrometry and wavelets}, volume={18}, DOI={10.1109/TSM.2004.836660}, number={1}, journal={IEEE Transactions on Semiconductor Manufacturing}, author={Rying, E. A. and Ozturk, M. C. and Bilbro, G. L. and Lu, J. C.}, year={2005}, pages={112–121} }
 @article{liu_ozturk_2005, title={Nickel germanosilicide contacts formed on heavily boron doped Si1-xGex source/drain junctions for nanoscale CMOS}, volume={52}, DOI={10.1109/TED.2005.850613}, number={7}, journal={IEEE Transactions on Electron Devices}, author={Liu, J. and Ozturk, M. C.}, year={2005}, pages={1535–1540} }
 @misc{zhang_misra_bedair_ozturk_2005, title={Optoelectronic devices having arrays of quantum-dot compound semiconductor superlattices therein}, volume={6,914,256}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Zhang, Z. and Misra, V. and Bedair, S. M. A. and Ozturk, M.}, year={2005} }
 @misc{zhang_misra_bedair_ozturk_2004, title={Methods of forming nano-scale electronic and optoelectronic devices using non-photolithographically defined nano-channel templates}, volume={6,709,929}, number={2004 Mar. 23}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Zhang, Z. and Misra, V. and Bedair, S. M. A. and Ozturk, M.}, year={2004} }
 @article{osburn_kim_han_de_yee_gannavaram_lee_lee_luo_zhu_et al._2002, title={Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?}, volume={46}, DOI={10.1147/rd.462.0299}, number={2-3}, journal={IBM Journal of Research and Development}, author={Osburn, C. M. and Kim, I. and Han, S. K. and De, I. and Yee, K. F. and Gannavaram, S. and Lee, S. J. and Lee, C. H. and Luo, Z. J. and Zhu, W. and et al.}, year={2002}, pages={299–315} }
 @article{fang_ozturk_o'neil_seebauer_2001, title={Arsenic redistribution during rapid thermal chemical vapor deposition of TiSi2 on Si}, volume={148}, DOI={10.1149/1.1339236}, number={2}, journal={Journal of the Electrochemical Society}, author={Fang, H. and Ozturk, M. C. and O'Neil, P. A. and Seebauer, E. G.}, year={2001}, pages={G43–49} }
 @article{ban_ozturk_misra_wortman_venables_maher_1999, title={A low-thermal-budget in situ doped multilayer silicon epitaxy process for MOSFET channel engineering}, volume={146}, DOI={10.1149/1.1391744}, number={3}, journal={Journal of the Electrochemical Society}, author={Ban, I. and Ozturk, M. C. and Misra, V. and Wortman, J. J. and Venables, D. and Maher, D. M.}, year={1999}, pages={1189–1196} }
 @article{fang_ozturk_seebauer_batchelor_1999, title={Effects of arsenic doping on chemical vapor deposition of titanium silicide}, volume={146}, DOI={10.1149/1.1392621}, number={11}, journal={Journal of the Electrochemical Society}, author={Fang, H. and Ozturk, M. C. and Seebauer, E. G. and Batchelor, D. E.}, year={1999}, pages={4240–4245} }
 @article{o'neil_ozturk_batchelor_xu_maher_1999, title={Effects of oxygen during selective silicon Epitaxial growth using disilane and chlorine}, volume={146}, DOI={10.1149/1.1391938}, number={6}, journal={Journal of the Electrochemical Society}, author={O'Neil, P. A. and Ozturk, M. C. and Batchelor, A. D. and Xu, M. M. and Maher, D. M.}, year={1999}, pages={2344–2352} }
 @article{o'neil_ozturk_batchelor_maher_1999, title={Effects of oxygen on selective silicon deposition using disilane}, volume={38}, DOI={10.1016/S0167-577X(98)00200-6}, number={6}, journal={Materials Letters}, author={O'Neil, P. A. and Ozturk, M. C. and Batchelor, A. D. and Maher, D. M.}, year={1999}, pages={418–422} }
 @article{o'neil_ozturk_batchelor_venables_xu_maher_1999, title={Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - I. Role of implanted BF2}, volume={146}, DOI={10.1149/1.1392052}, number={8}, journal={Journal of the Electrochemical Society}, author={O'Neil, P. A. and Ozturk, M. C. and Batchelor, A. D. and Venables, D. and Xu, M. M. and Maher, D. M.}, year={1999}, pages={3070–3078} }
 @article{o'neil_ozturk_batchelor_venables_maher_1999, title={Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - II. Role of implanted arsenic}, volume={146}, DOI={10.1149/1.1392053}, number={8}, journal={Journal of the Electrochemical Society}, author={O'Neil, P. A. and Ozturk, M. C. and Batchelor, A. D. and Venables, D. and Maher, D. M.}, year={1999}, pages={3079–3086} }
 @article{ban_ozturk_1999, title={In situ phosphorus doping during silicon epitaxy in an ultra high vacuum rapid thermal chemical vapor deposition reactor}, volume={146}, DOI={10.1149/1.1392631}, number={11}, journal={Journal of the Electrochemical Society}, author={Ban, I. and Ozturk, M. C.}, year={1999}, pages={4303–4308} }
 @article{celik_ozturk_1999, title={Low thermal budget surface preparation for selective epitaxy a study on process robustness}, volume={146}, DOI={10.1149/1.1391804}, number={4}, journal={Journal of the Electrochemical Society}, author={Celik, S. M. and Ozturk, M. C.}, year={1999}, pages={1557–1564} }
 @article{o'neil_ozturk_batchelor_xu_maher_1999, title={Quality of selective silicon Epitaxial films deposited using disilane and chlorine}, volume={146}, DOI={10.1149/1.1391937}, number={6}, journal={Journal of the Electrochemical Society}, author={O'Neil, P. A. and Ozturk, M. C. and Batchelor, A. D. and Xu, M. M. and Maher, D. M.}, year={1999}, pages={2337–2343} }
 @article{celik_ozturk_1998, title={Low thermal budget in situ surface cleaning for selective silicon epitaxy}, volume={145}, DOI={10.1149/1.1838849}, number={10}, journal={Journal of the Electrochemical Society}, author={Celik, S. M. and Ozturk, M. C.}, year={1998}, pages={3602–3609} }
 @inproceedings{srivastava_sun_bellur_bartholomew_o'neil_celik_osburn_masnari_ozturk_westhoff_et al._1997, title={A 0.18 ?m CMOS technology for elevated source/drain MOSFETs using selective silicon epitaxy}, booktitle={ULSI science and technology/1997: Proceedings of the Sixth International Symposium on UltraLarge Scale Integration Science and Technology (Proceedings (Electrochemical Society); v. 97-3)}, publisher={Pennington, NJ: Electrochemical Society}, author={Srivastava, A. and Sun, J. and Bellur, K. and Bartholomew, R. F. and O'Neil, P. and Celik, S. M. and Osburn, C. M. and Masnari, N. A. and Ozturk, M. C. and Westhoff, R. and et al.}, year={1997}, pages={571–585} }
 @article{o'neil_ozturk_violette_batchelor_christensen_maher_1997, title={Optimization of process conditions for selective silicon epitaxy using disilane, hydrogen, and chlorine}, volume={144}, DOI={10.1149/1.1838003}, number={9}, journal={Journal of the Electrochemical Society}, author={O'Neil, P. A. and Ozturk, M. C. and Violette, K. E. and Batchelor, D. and Christensen, K. and Maher, D. M.}, year={1997}, pages={3309–3315} }
 @article{li_mirabedini_kuehn_wortman_ozturk_batchelor_christensen_maher_1997, title={Rapid thermal chemical vapor deposition of in situ boron doped polycrystalline silicon germanium films on silicon dioxide for complimentary metal oxide semiconductor applications}, volume={71}, DOI={10.1063/1.120344}, number={23}, journal={Applied Physics Letters}, author={Li, V. Z. Q. and Mirabedini, M. R. and Kuehn, R. T. and Wortman, J. J. and Ozturk, M. C. and Batchelor, D. and Christensen, K. and Maher, D. M.}, year={1997}, pages={3388–3390} }
 @article{ban_ozturk_demirlioglu_1997, title={Suppression of oxidation-enhanced boron diffusion in silicon by carbon implantation and characterization of MOSFET's with carbon-implanted channels}, volume={44}, DOI={10.1109/16.622613}, number={9}, journal={IEEE Transactions on Electron Devices}, author={Ban, I. and Ozturk, M. C. and Demirlioglu, E. K.}, year={1997}, pages={1544–1551} }
 @inproceedings{sun_bartholomew_bellur_o'neil_srivastava_violette_ozturk_osburn_masnari_1996, title={Sub-half micron elevated source/drain NMOSFETs by low temperature selective epitaxial deposition}, DOI={10.1557/proc-429-343}, booktitle={Rapid thermal and integrated processing V: Symposium held April 8-12, 1996, San Francisco, California, U.S.A.  (Materials Research Society symposium; 429)}, publisher={Pittsburgh, Pa.: Materials Research Society}, author={Sun, J. and Bartholomew, R. F. and Bellur, K. and O'Neil, P. A. and Srivastava, A. and Violette, K. E. and Ozturk, M. C. and Osburn, C. M. and Masnari, N. A.}, year={1996}, pages={343–347} }
 @misc{ozturk_sanganeria_1995, title={Method for forming a layer of uniform thickness on a semiconductor wafer during rapid thermal processing}, volume={5,439,850}, number={1995 Aug. 8}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Ozturk, M. and Sanganeria, M.}, year={1995} }
 @misc{ozturk_grider_sanganeria_ashburn_wortman_1994, title={Selective deposition of doped silicon-germanium alloy on semiconductor substrate, and resulting structures}, volume={5,336,903}, number={1994 Aug. 9}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Ozturk, M. and Grider, D. and Sanganeria, M. and Ashburn, S. and Wortman, J.}, year={1994} }
 @article{masnari_hauser_lucovsky_maher_markunas_ozturk_wortman_1993, title={Center for Advanced Electronic Materials Processing}, volume={81}, DOI={10.1109/JPROC.1993.752025}, number={1}, journal={Proceedings of the IEEE}, author={Masnari, N. A. and Hauser, J. R. and Lucovsky, G. and Maher, D. M. and Markunas, R. J. and Ozturk, M. C. and Wortman, J. J.}, year={1993}, pages={42–59} }
 @misc{ozturk_wortman_1993, title={Deposition of germanium thin films on silicon dioxide employing interposed polysilicon laye}, volume={5,250,452}, number={1993 Oct. 5}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Ozturk, M. and Wortman, J.}, year={1993} }
 @misc{ozturk_grider_sanganeria_ashburn_1993, title={Selective deposition of doped silion-germanium alloy on semiconductor substrate}, volume={5,242,847}, number={1993 Sep. 7}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Ozturk, M. and Grider, D. and Sanganeria, M. and Ashburn, S.}, year={1993} }
 @misc{ozturk_wortman_1992, title={Germanium silicon dioxide gate MOSFET}, volume={5,101,247}, number={1992 Mar. 31}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Ozturk, M. and Wortman, J.}, year={1992} }
 @misc{ozturk_wortman_grider_1992, title={Selective germanium deposition on silicon and resulting structures}, volume={5,089,872}, number={1992 Feb. 18}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Ozturk, M. and Wortman, J. and Grider, D.}, year={1992} }