Mehmet Ozturk

Sargolzaeiaval, Y., Ramesh, V. P., & Ozturk, M. C. (2022). A comprehensive analytical model for thermoelectric body heat harvesting incorporating the impact of human metabolism and physical activity. APPLIED ENERGY, 324. https://doi.org/10.1016/j.apenergy.2022.119738

Yildiz, O., Lubna, M. M., Ramesh, V. P., Ozturk, M., & Bradford, P. D. (2022). Microporous vertically aligned CNT nanocomposites with tunable properties for use in flexible heat sinks. JOURNAL OF SCIENCE-ADVANCED MATERIALS AND DEVICES, 7(4). https://doi.org/10.1016/j.jsamd.2022.100509

Neumann, T. V., Kara, B., Sargolzaeiaval, Y., Im, S., Ma, J., Yang, J., … Dickey, M. D. (2021). Aerosol Spray Deposition of Liquid Metal and Elastomer Coatings for Rapid Processing of Stretchable Electronics. MICROMACHINES, 12(2). https://doi.org/10.3390/mi12020146

Vallem, V., Sargolzaeiaval, Y., Ozturk, M., Lai, Y.-C., & Dickey, M. D. (2021). [Review of Energy Harvesting and Storage with Soft and Stretchable Materials]. ADVANCED MATERIALS, 33(19). https://doi.org/10.1002/adma.202004832

Padmanabhan Ramesh, V., Sargolzaeiaval, Y., Neumann, T., Misra, V., Vashaee, D., Dickey, M. D., & Ozturk, M. C. (2021). Flexible thermoelectric generator with liquid metal interconnects and low thermal conductivity silicone filler. NPJ FLEXIBLE ELECTRONICS, 5(1). https://doi.org/10.1038/s41528-021-00101-3

Heidari, H., Ozturk, M., Ghannam, R., Law, M.-K., Khanbareh, H., & Miah, A. H. (2021). IEEE ACCESS SPECIAL SECTION EDITORIAL: ENERGY HARVESTING TECHNOLOGIES FOR WEARABLE AND IMPLANTABLE DEVICES. IEEE ACCESS, Vol. 9, pp. 91324–91327. https://doi.org/10.1109/ACCESS.2021.3088622

Sargolzaeiaval, Y., Ramesh, V. P., Neumann, T. V., Misra, V., Vashaee, D., Dickey, M. D., & Ozturk, M. C. (2020). Flexible thermoelectric generators for body heat harvesting - Enhanced device performance using high thermal conductivity elastomer encapsulation on liquid metal interconnects. APPLIED ENERGY, 262. https://doi.org/10.1016/j.apenergy.2019.114370

Nozariasbmarz, A., Collins, H., Dsouza, K., Polash, M. H., Hosseini, M., Hyland, M., … Vashaee, D. (2020). [Review of Review of wearable thermoelectric energy harvesting: From body temperature to electronic systems]. APPLIED ENERGY, 258. https://doi.org/10.1016/j.apenergy.2019.114069

Nozariasbmarz, A., Suarez, F., Dycus, J. H., Cabral, M. J., LeBeau, J. M., Ozturk, M. C., & Vashaee, D. (2020). Thermoelectric generators for wearable body heat harvesting: Material and device concurrent optimization. NANO ENERGY, 67. https://doi.org/10.1016/j.nanoen.2019.104265

Sargolzaeiaval, Y., Ramesh, V. P., Neumann, T. V., Miles, R., Dickey, M. D., & Ozturk, M. C. (2019). High Thermal Conductivity Silicone Elastomer Doped with Graphene Nanoplatelets and Eutectic GaIn Liquid Metal Alloy. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 8(6), P357–P362. https://doi.org/10.1149/2.0271906jss

Suarez, F., Parekh, D. P., Ladd, C., Vashaee, D., Dickey, M. D., & Öztürk, M. C. (2017). Flexible thermoelectric generator using bulk legs and liquid metal interconnects for wearable electronics. Applied Energy, 202, 736–745. https://doi.org/10.1016/J.APENERGY.2017.05.181

Nozariasbmarz, A., Agarwal, A., Coutant, Z. A., Hall, M. J., Liu, J., Liu, R., … Vashaee, D. (2017). [Review of Thermoelectric silicides: A review]. JAPANESE JOURNAL OF APPLIED PHYSICS, 56(5). https://doi.org/10.7567/jjap.56.05da04

Suarez, F., Nozariasbmarz, A., Vashaee, D., & Ozturk, M. C. (2016). Designing thermoelectric generators for self-powered wearable electronics. ENERGY & ENVIRONMENTAL SCIENCE, 9(6), 2099–2113. https://doi.org/10.1039/c6ee00456c

Gurarslan, A., Yu, Y., Su, L., Yu, Y., Suarez, F., Yao, S., … Cao, L. (2014). Surface-Energy-Assisted Perfect Transfer of Centimeter-Scale Mono layer and Few-Layer MoS2 Films onto Arbitrary Substrates. ACS NANO, 8(11), 11522–11528. https://doi.org/10.1021/nn5057673

Dhawan, A., Du, Y., Batchelor, D., Wang, H.-N., Leonard, D., Misra, V., … Vo-Dinh, T. (2011). Hybrid Top-Down and Bottom-Up Fabrication Approach for Wafer-Scale Plasmonic Nanoplatforms. SMALL, 7(6), 727–731. https://doi.org/10.1002/smll.201002186

Alptekin, E., & Ozturk, M. C. (2010). NixPt1-xSi/n-Si contacts with sub-0.1 eV effective Schottky barrier heights obtained by sulfur segregation. MICROELECTRONIC ENGINEERING, 87(11), 2358–2360. https://doi.org/10.1016/j.mee.2010.04.008

Alptekin, E., & Ozturk, M. C. (2010). Ultrahigh Vacuum Chemical Vapor Deposition of Doped and Intrinsic Si1-xCx Epitaxy from Disilane, Trimethylsilane, and Phosphine. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 157(6), H699–H704. https://doi.org/10.1149/1.3414167

Alptekin, E., Ozturk, M. C., Misra, V., Cho, Y., Kim, Y., & Chopra, S. (2009). Erbium Silicide Formation on Si1-xCx Epitaxial Layers. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 156(5), H378–H383. https://doi.org/10.1149/1.3097189

Alptekin, E., Kirkpatrick, C. J., Misra, V., & Ozturk, M. C. (2009). Platinum Germanosilicide Contacts Formed on Strained and Relaxed Si1-xGex Layers. IEEE TRANSACTIONS ON ELECTRON DEVICES, 56(6), 1220–1227. https://doi.org/10.1109/TED.2009.2018159

Alptekin, E., Ozturk, M. C., & Misra, V. (2009). Schottky Barrier Height of Erbium Silicide on Si1-xCx. IEEE ELECTRON DEVICE LETTERS, 30(9), 949–951. https://doi.org/10.1109/LED.2009.2026297

Alptekin, E., & Ozturk, M. C. (2009). Schottky Barrier Height of Nickel Silicide Contacts Formed on Si1-xCx Epitaxial Layers. IEEE ELECTRON DEVICE LETTERS, 30(12), 1320–1322. https://doi.org/10.1109/LED.2009.2034114

Alptekin, E., & Ozturk, M. C. (2009). Tuning of the Nickel Silicide Schottky Barrier Height on p-Type Silicon by Indium Implantation. IEEE ELECTRON DEVICE LETTERS, 30(12), 1272–1274. https://doi.org/10.1109/LED.2009.2033451

Alptekin, E., Ozturk, M. C., & Misra, V. (2009). Tuning of the Platinum Silicide Schottky Barrier Height on n-Type Silicon by Sulfur Segregation. IEEE ELECTRON DEVICE LETTERS, 30(4), 331–333. https://doi.org/10.1109/LED.2009.2014182

Ozturk, M., Misra, V., & Chopra, S. (2007). Methods of fabricating strained semiconductor-on-insulator field-effect transistors and related devices. Washington, DC: U.S. Patent and Trademark Office.

Zhang, Z.-B., Misra, V., Bedair, S. M. A., & Ozturk, M. (2007). Optoelectonic devices having arrays of quantum-dot compound semiconductor superlattices therein. Washington, DC: U.S. Patent and Trademark Office.

Zhao, W., Duscher, G., Rozgonyi, G., Zikry, M. A., Chopra, S., & Ozturk, M. C. (2007). Quantitative nanoscale local strain profiling in embedded SiGe metal-oxide-semiconductor structures. APPLIED PHYSICS LETTERS, 90(19). https://doi.org/10.1063/1.2738188

Chopra, S., Ozturk, M. C., Misra, V., Ren, Z., & McNeil, L. E. (2007). The effects of nickel germanosilicide contacts on the biaxial compressive stress in thin epitaxial silicon-germanium alloys on silicon. APPLIED PHYSICS LETTERS, 91(14). https://doi.org/10.1063/1.2795346

Chopra, S., Ozturk, M. C., Misra, V., McGuire, K., & McNeil, L. E. (2006). Analysis of boron strain compensation in silicon-germanium alloys by Raman spectroscopy. APPLIED PHYSICS LETTERS, 88(20). https://doi.org/10.1063/1.2205752

Chopra, S., Ozturk, M. C., Misra, V., McGuire, K., & McNeil, L. E. (2006). Critical thickness of heavily boron-doped silicon-germanium alloys. APPLIED PHYSICS LETTERS, 89(20). https://doi.org/10.1063/1.2374870

Liu, J., & Ozturk, M. C. (2005). Effects of heavy boron doping on the valence band offset at the Si1-xGex/Si interface and Si1-xGex band gap. APPLIED PHYSICS LETTERS, 87(25). https://doi.org/10.1063/1.2149295

Lin, Y. X., Ozturk, M. C., Chen, B., Rhee, S. J., Lee, J. C., & Misra, V. (2005). Impact of Ge on integration of HfO2 and metal gate electrodes on strained Si channels. APPLIED PHYSICS LETTERS, 87(7). https://doi.org/10.1063/1.2009809

Rying, E. A., Ozturk, M. C., Bilbro, G. L., & Lu, J. C. (2005). In situ selectivity and thickness monitoring during selective silicon epitaxy using quadrupole mass spectrometry and wavelets. IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 18(1), 112–121. https://doi.org/10.1109/TSM.2004.836660

Liu, J., & Ozturk, M. C. (2005). Nickel germanosilicide contacts formed on heavily boron doped Si1-xGex source/drain junctions for nanoscale CMOS. IEEE TRANSACTIONS ON ELECTRON DEVICES, 52(7), 1535–1540. https://doi.org/10.1109/TED.2005.850613

Zhang, Z., Misra, V., Bedair, S. M. A., & Ozturk, M. (2005). Optoelectronic devices having arrays of quantum-dot compound semiconductor superlattices therein. Washington, DC: U.S. Patent and Trademark Office.

Zhang, Z., Misra, V., Bedair, S. M. A., & Ozturk, M. (2004). Methods of forming nano-scale electronic and optoelectronic devices using non-photolithographically defined nano-channel templates. Washington, DC: U.S. Patent and Trademark Office.

Osburn, C. M., Kim, I., Han, S. K., De, I., Yee, K. F., Gannavaram, S., … Ozturk, M. C. (2002). Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go? IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 46(2-3), 299–315. https://doi.org/10.1147/rd.462.0299

Fang, H., Ozturk, M. C., PA O'Neil, & Seebauer, E. G. (2001). Arsenic redistribution during rapid thermal chemical vapor deposition of TiSi2 on Si. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 148(2), G43–G49. https://doi.org/10.1149/1.1339236

Ban, I., Ozturk, M. C., Misra, V., Wortman, J. J., Venables, D., & Maher, D. M. (1999). A low-thermal-budget in situ doped multilayer silicon epitaxy process for MOSFET channel engineering. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(3), 1189–1196. https://doi.org/10.1149/1.1391744

Fang, H., Ozturk, M. C., Seebauer, E. G., & Batchelor, D. E. (1999). Effects of arsenic doping on chemical vapor deposition of titanium silicide. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(11), 4240–4245. https://doi.org/10.1149/1.1392621

PA O'Neil, Ozturk, M. C., Batchelor, A. D., Xu, M. M., & Maher, D. M. (1999). Effects of oxygen during selective silicon epitaxial growth using disilane and chlorine. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(6), 2344–2352. https://doi.org/10.1149/1.1391938

PA O'Neil, Ozturk, M. C., Batchelor, A. D., & Maher, D. M. (1999). Effects of oxygen on selective silicon deposition using disilane. MATERIALS LETTERS, 38(6), 418–422. https://doi.org/10.1016/S0167-577X(98)00200-6

PA O'Neil, Ozturk, M. C., Batchelor, A. D., Venables, D., Xu, M. M., & Maher, D. M. (1999). Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - I. Role of implanted BF2. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(8), 3070–3078. https://doi.org/10.1149/1.1392052

PA O'Neil, Ozturk, M. C., Batchelor, A. D., Venables, D., & Maher, D. M. (1999). Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - II. Role of implanted arsenic. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(8), 3079–3086. https://doi.org/10.1149/1.1392053

Ban, I., & Ozturk, M. C. (1999). In situ phosphorus doping during silicon epitaxy in an ultrahigh vacuum rapid thermal chemical vapor deposition reactor. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(11), 4303–4308. https://doi.org/10.1149/1.1392631

Celik, S. M., & Ozturk, M. C. (1999). Low thermal budget surface preparation for selective epitaxy a study on process robustness. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(4), 1557–1564. https://doi.org/10.1149/1.1391804

PA O'Neil, Ozturk, M. C., Batchelor, A. D., Xu, M. M., & Maher, D. M. (1999). Quality of selective silicon epitaxial films deposited using disilane and chlorine. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(6), 2337–2343. https://doi.org/10.1149/1.1391937

Celik, S. M., & Ozturk, M. C. (1998). Low thermal budget in situ surface cleaning for selective silicon epitaxy. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 145(10), 3602–3609. https://doi.org/10.1149/1.1838849

Srivastava, A., Sun, J., Bellur, K., Bartholomew, R. F., O'Neil, P., Celik, S. M., … Fowler, B. (1997). A 0.18 ?m CMOS technology for elevated source/drain MOSFETs using selective silicon epitaxy. ULSI science and technology/1997: Proceedings of the Sixth International Symposium on UltraLarge Scale Integration Science and Technology (Proceedings (Electrochemical Society); v. 97-3), 571–585. Pennington, NJ: Electrochemical Society.

ONeil, P. A., Ozturk, M. C., Violette, K. E., Batchelor, D., Christensen, K., & Maher, D. M. (1997). Optimization of process conditions for selective silicon epitaxy using disilane, hydrogen, and chlorine. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(9), 3309–3315. https://doi.org/10.1149/1.1838003

Li, V. Z. Q., Mirabedini, M. R., Kuehn, R. T., Wortman, J. J., Ozturk, M. C., Batchelor, D., … Maher, D. M. (1997). Rapid thermal chemical vapor deposition of in situ boron doped polycrystalline silicon germanium films on silicon dioxide for complimentary metal oxide semiconductor applications. Applied Physics Letters, 71(23), 3388–3390. https://doi.org/10.1063/1.120344

Ban, I., Ozturk, M. C., & Demirlioglu, E. K. (1997). Suppression of oxidation-enhanced boron diffusion in silicon by carbon implantation and characterization of MOSFET's with carbon-implanted channels. IEEE TRANSACTIONS ON ELECTRON DEVICES, 44(9), 1544–1551. https://doi.org/10.1109/16.622613

Sun, J., Bartholomew, R. F., Bellur, K., ONeil, P. A., Srivastava, A., Violette, K. E., … Masnari, N. A. (1996). Sub-half micron elevated source/drain NMOSFETs by low temperature selective epitaxial deposition. RAPID THERMAL AND INTEGRATED PROCESSING V, Vol. 429, pp. 343–347. https://doi.org/10.1557/proc-429-343

Ozturk, M., & Sanganeria, M. (1995). Method for forming a layer of uniform thickness on a semiconductor wafer during rapid thermal processing. Washington, DC: U.S. Patent and Trademark Office.

Ozturk, M., Grider, D., Sanganeria, M., Ashburn, S., & Wortman, J. (1994). Selective deposition of doped silicon-germanium alloy on semiconductor substrate, and resulting structures. Washington, DC: U.S. Patent and Trademark Office.

MASNARI, N. A., HAUSER, JR, LUCOVSKY, G., MAHER, D. M., MARKUNAS, R. J., OZTURK, M. C., & WORTMAN, J. J. (1993). CENTER FOR ADVANCED ELECTRONIC MATERIALS PROCESSING. PROCEEDINGS OF THE IEEE, 81(1), 42–59. https://doi.org/10.1109/JPROC.1993.752025

Ozturk, M., & Wortman, J. (1993). Deposition of germanium thin films on silicon dioxide employing interposed polysilicon laye. Washington, DC: U.S. Patent and Trademark Office.

Ozturk, M., Grider, D., Sanganeria, M., & Ashburn, S. (1993). Selective deposition of doped silion-germanium alloy on semiconductor substrate. Washington, DC: U.S. Patent and Trademark Office.

Ozturk, M., & Wortman, J. (1992). Germanium silicon dioxide gate MOSFET. Washington, DC: U.S. Patent and Trademark Office.

Ozturk, M., Wortman, J., & Grider, D. (1992). Selective germanium deposition on silicon and resulting structures. Washington, DC: U.S. Patent and Trademark Office.