@article{hasan_alessi_khachariya_mecouch_mita_reddy_sierakowski_sochacki_bockowski_kohn_et al._2025, title={Mg-annealed anode contacts to reduce the on-resistance of GaN pn diodes formed via Mg implantation and ultra-high pressure annealing}, volume={18}, DOI={10.35848/1882-0786/adfc26}, abstractNote={Abstract Drive-in diffusion of Mg implanted into GaN during ultra-high pressure annealing leads to low surface acceptor concentrations. This favors p-type Schottky contact formation, which severely increases the on-state resistance of Mg-implanted GaN pn diodes (PNDs). This work aims to reduce the resistance of contacts to Mg-implanted p-GaN by incorporating Mg deposition and annealing into the contact stack, achieving a rectification ratio (RR) over 10 12 , a current density above 1 kA cm −2 and a record-low differential specific on-resistance ( R ON ) of 0.65 mΩ.cm 2 in Mg-implanted PNDs, offering a potential solution for improving the performance and manufacturability of vertical GaN devices that require contacts to Mg-implanted p-GaN.}, number={9}, journal={Applied Physics Express}, author={Hasan, Md Azizul and Alessi, Matthew and Khachariya, Dolar and Mecouch, Will and Mita, Seiji and Reddy, Pramod and Sierakowski, Kacper and Sochacki, Tomasz and Bockowski, Michal and Kohn, Erhard and et al.}, year={2025}, month={Aug} }