Mathew Hayden Breckenridge

Works (11)

2021 journal article

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

APPLIED PHYSICS LETTERS, 118(2).

By: M. Breckenridge, J. Tweedie, P. Reddy, Y. Guan, P. Bagheri, D. Szymanski, S. Mita, K. Sierakowski ...

Source: Web Of Science
Added: February 15, 2021

2021 journal article

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

APPLIED PHYSICS LETTERS, 118(11).

By: M. Breckenridge, P. Bagheri, Q. Guo, B. Sarkar, D. Khachariya, S. Pavlidis, J. Tweedie, R. Kirste ...

Source: Web Of Science
Added: April 12, 2021

2021 journal article

On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers

APPLIED PHYSICS LETTERS, 118(12).

By: D. Khachariya, D. Szymanski, M. Breckenridge, P. Reddy, E. Kohn, Z. Sitar, R. Collazo, S. Pavlidis

Source: Web Of Science
Added: April 5, 2021

2021 journal article

Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

APPLIED PHYSICS LETTERS, 118(4).

By: S. Washiyama, K. Mirrielees, P. Bagheri, J. Baker, J. Kim, Q. Guo, R. Kirste, Y. Guan ...

Source: Web Of Science
Added: March 29, 2021

2020 article

Strain Recovery and Defect Characterization in Mg-Implanted Homoepitaxial GaN on High-Quality GaN Substrates

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS.

By: Y. Wang, K. Huynh, M. Liao, H. Yu, T. Bai, J. Tweedie, M. Breckenridge, R. Collazo ...

Source: Web Of Science
Added: March 16, 2020

2019 article

The polarization field in Al-rich AlGaN multiple quantum wells

JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 58.

Source: Web Of Science
Added: July 29, 2019

2018 journal article

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

Applied Physics Letters, 112(6).

By: I. Bryan, Z. Bryan, S. Washiyama, P. Reddy, B. Gaddy, B. Sarkar, M. Breckenridge, Q. Guo ...

Source: NC State University Libraries
Added: August 6, 2018

2018 conference paper

On Contacts to III-nitride deep-UV emitters

2018 3rd International Conference on Microwave and Photonics (ICMAP).

By: B. Sarkar, P. Reddy, A. Klump, R. Rounds, M. Breckenridge, B. Haidet, S. Mita, R. Kirste, R. Collazo, Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

2018 journal article

Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(6).

By: P. Reddy, S. Washiyama, W. Mecouch, L. Hernandez-Balderrama, F. Kaess, M. Breckenridge, B. Sarkar, B. Haidet ...

Source: NC State University Libraries
Added: December 10, 2018

2018 conference paper

Thermal conductivity of bulk and thin film beta-Ga2O3 measured by the 3 omega technique

OXIDE-BASED MATERIALS AND DEVICES IX, 10533.

Source: NC State University Libraries
Added: December 31, 2018

2016 journal article

High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

Journal of Applied Physics, 119(14).

By: P. Reddy, S. Washiyama, F. Kaess, M. Breckenridge, L. Hernandez-Balderrama, B. Haidet, D. Alden, A. Franke ...

Source: NC State University Libraries
Added: August 6, 2018