Works (18)
2024 article
Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activation
Huynh, K., Wang, Y., Liao, M. E., Tweedie, J., Reddy, P., Breckenridge, M. H., … Goorsky, M. S. (2024, January 11). Journal of Applied Physics, Vol. 135.
Contributors: K. Huynh *, Y. Wang *, M. Liao *, J. Tweedie *, P. Reddy* , n, R. Collazo n , Z. Sitar n
open access via pubs.aip.org (publisher PDF)2023 article
Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor
Stein, S. R., Khachariya, D., Mita, S., Breckenridge, M. H., Tweedie, J., Reddy, P., … Pavlidis, S. (2023, March 1). Applied Physics Express, Vol. 16.
Contributors: S. Stein n, D. Khachariya*, S. Mita*, n, J. Tweedie*, P. Reddy* , K. Sierakowski *, G. Kamler *
2022 article
Doping and compensation in heavily Mg doped Al-rich AlGaN films
Bagheri, P., Klump, A., Washiyama, S., Breckenridge, M. H., Kim, J. H., Guan, Y., … Sitar, Z. (2022, February 21). Applied Physics Letters, Vol. 2.
Contributors: P. Bagheri n, A. Klump n, S. Washiyama n, n, J. Kim n, Y. Guan n, D. Khachariya n, C. Quiñones-García n
2022 article
Large‐Area, Solar‐Blind, Sub‐250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates
Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, February 19). Physica Status Solidi (RRL) - Rapid Research Letters, Vol. 3, p. 2100619.
Contributors: P. Reddy* , W. Mecouch*, n, D. Khachariya n, P. Bagheri n, J. Kim n, Y. Guan n, S. Mita*
2022 article
Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates
Khachariya, D., Mita, S., Reddy, P., Dangi, S., Dycus, J. H., Bagheri, P., … Pavlidis, S. (2022, April 25). Applied Physics Letters, Vol. 4.
Contributors: D. Khachariya n, S. Mita*, P. Reddy* , S. Dangi n, J. Dycus*, P. Bagheri n, n, R. Sengupta n
2022 article
Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing
Khachariya, D., Stein, S., Mecouch, W., Breckenridge, M. H., Rathkanthiwar, S., Mita, S., … Sitar, Z. (2022, September 5). Applied Physics Express, Vol. 10.
Contributors: D. Khachariya*, S. Stein n, W. Mecouch*, n, S. Rathkanthiwar n, S. Mita*, B. Moody*, P. Reddy*
2021 article
High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN
Breckenridge, M. H., Bagheri, P., Guo, Q., Sarkar, B., Khachariya, D., Pavlidis, S., … Sitar, Z. (2021, March 15). Applied Physics Letters, Vol. 118.
Contributors: n, P. Bagheri n, Q. Guo n, B. Sarkar n, D. Khachariya n, S. Pavlidis n, J. Tweedie*, R. Kirste*
2021 article
High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing
Breckenridge, M. H., Tweedie, J., Reddy, P., Guan, Y., Bagheri, P., Szymanski, D., … Sitar, Z. (2021, January 11). Applied Physics Letters, Vol. 118, p. 022101.
Contributors: n, J. Tweedie n, P. Reddy n , Y. Guan n, P. Bagheri n, D. Szymanski n, S. Mita n, K. Sierakowski n
2021 article
On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers
Khachariya, D., Szymanski, D., Breckenridge, M. H., Reddy, P., Kohn, E., Sitar, Z., … Pavlidis, S. (2021, March 22). Applied Physics Letters, Vol. 118.
Contributors: D. Khachariya n, D. Szymanski n, n, P. Reddy* , E. Kohn n, Z. Sitar n, R. Collazo n , S. Pavlidis n
2021 article
Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping
Washiyama, S., Mirrielees, K. J., Bagheri, P., Baker, J. N., Kim, J.-H., Guo, Q., … Sitar, Z. (2021, January 25). Applied Physics Letters, Vol. 118.
Contributors: S. Washiyama n, K. Mirrielees n, P. Bagheri n, J. Baker n, J. Kim n, Q. Guo n, R. Kirste*, Y. Guan n
2021 article
Study on avalanche breakdown and Poole–Frenkel emission in Al-rich AlGaN grown on single crystal AlN
Reddy, P., Khachariya, D., Mecouch, W., Breckenridge, M. H., Bagheri, P., Guan, Y., … Sitar, Z. (2021, November 1). Applied Physics Letters, Vol. 11.
Contributors: P. Reddy* , D. Khachariya n, W. Mecouch *, n, P. Bagheri n, Y. Guan n, J. Kim n, S. Pavlidis n
2020 article
Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates
Wang, Y., Huynh, K., Liao, M. E., Yu, H.-M., Bai, T., Tweedie, J., … Goorsky, M. S. (2020, February 13). Physica Status Solidi (b).
2019 article
The polarization field in Al-rich AlGaN multiple quantum wells
Guo, Q., Kirste, R., Mita, S., Tweedie, J., Reddy, P., Washiyama, S., … Sitar, Z. (2019, May 9). Japanese Journal of Applied Physics, Vol. 58.
Contributors: Q. Guo n, R. Kirste n, S. Mita n, J. Tweedie n, P. Reddy n , S. Washiyama n, n, R. Collazo n , Z. Sitar n
2018 article
Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD
Bryan, I., Bryan, Z., Washiyama, S., Reddy, P., Gaddy, B., Sarkar, B., … Sitar, Z. (2018, February 5). Applied Physics Letters, Vol. 112, p. 062102.
Contributors: I. Bryan n, Z. Bryan n, S. Washiyama n, P. Reddy* , B. Gaddy n, B. Sarkar n, n, Q. Guo n
2018 article
On contacts to III-nitride deep-UV emitters
Sarkar, B., Reddy, P., Klump, A., Rounds, R., Breckenridge, M. R., Haidet, B. B., … Sitar, Z. (2018, February 1). 2018 3rd International Conference on Microwave and Photonics (ICMAP), pp. 1–2.
Contributors: B. Sarkar n, P. Reddy* , A. Klump n, R. Rounds n, n, B. Haidet n, S. Mita, R. Kirste, R. Collazo n , Z. Sitar n
2018 article
Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition
Reddy, P., Washiyama, S., Mecouch, W., Hernandez-Balderrama, L. H., Kaess, F., Breckenridge, M. H., … Sitar, Z. (2018, November 1). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Vol. 36.
Contributors: P. Reddy n , S. Washiyama n, W. Mecouch n, L. Hernandez-Balderrama n, F. Kaess n, n, B. Sarkar n, B. Haidet n
2018 article
Thermal conductivity of bulk and thin film [beta]-Ga2O3 measured by the 3[omega] technique
Blumenschein, N., Slomski, M., Kaess, F., Breckenridge, M. H., Paskov, P., Muth, J., & Paskova, T. (2018, February 23).
2016 article
High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies
Reddy, P., Washiyama, S., Kaess, F., Breckenridge, M. H., Hernandez-Balderrama, L. H., Haidet, B. B., … Sitar, Z. (2016, April 11). Journal of Applied Physics, Vol. 119, p. 145702.