Works (16)

2022 journal article

Doping and compensation in heavily Mg doped Al-rich AlGaN films

APPLIED PHYSICS LETTERS, 120(8).

Sources: Web Of Science, ORCID
Added: June 20, 2022

2022 article

Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3.

By: P. Reddy, W. Mecouch, M. Breckenridge n, D. Khachariya, P. Bagheri, J. Kim, Y. Guan, S. Mita ...

Sources: Web Of Science, ORCID
Added: March 11, 2022

2022 journal article

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS, 120(17).

By: D. Khachariya, S. Mita, P. Reddy, S. Dangi, J. Dycus*, P. Bagheri, M. Breckenridge n, R. Sengupta ...

Sources: Web Of Science, ORCID
Added: May 31, 2022

2022 journal article

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

APPLIED PHYSICS EXPRESS, 15(10).

By: D. Khachariya, S. Stein, W. Mecouch, M. Breckenridge, S. Rathkanthiwar, S. Mita, B. Moody, P. Reddy ...

Sources: Web Of Science, ORCID
Added: October 3, 2022

2021 journal article

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

APPLIED PHYSICS LETTERS, 118(2), 022101.

By: M. Breckenridge n, J. Tweedie, P. Reddy, Y. Guan, P. Bagheri, D. Szymanski, S. Mita, K. Sierakowski* ...

Sources: Web Of Science, ORCID
Added: January 14, 2021

2021 journal article

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

APPLIED PHYSICS LETTERS, 118(11).

By: M. Breckenridge n, P. Bagheri, Q. Guo, B. Sarkar, D. Khachariya, S. Pavlidis, J. Tweedie, R. Kirste ...

Sources: Web Of Science, ORCID
Added: March 17, 2021

2021 journal article

On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers

APPLIED PHYSICS LETTERS, 118(12).

By: D. Khachariya, D. Szymanski, M. Breckenridge n, P. Reddy, E. Kohn n, Z. Sitar, R. Collazo, S. Pavlidis

Sources: Web Of Science, ORCID
Added: March 24, 2021

2021 journal article

Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

APPLIED PHYSICS LETTERS, 118(4).

By: S. Washiyama, K. Mirrielees, P. Bagheri, J. Baker, J. Kim, Q. Guo, R. Kirste, Y. Guan ...

Sources: Web Of Science, ORCID
Added: March 29, 2021

2021 journal article

Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN

APPLIED PHYSICS LETTERS, 119(18).

By: P. Reddy, D. Khachariya, W. Mecouch*, M. Breckenridge n, P. Bagheri, Y. Guan, J. Kim, S. Pavlidis ...

Sources: Web Of Science, ORCID
Added: November 3, 2021

2020 article

Strain Recovery and Defect Characterization in Mg-Implanted Homoepitaxial GaN on High-Quality GaN Substrates

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS.

By: Y. Wang*, K. Huynh*, M. Liao*, H. Yu*, T. Bai*, J. Tweedie*, M. Breckenridge, R. Collazo ...

Sources: Web Of Science, ORCID
Added: March 16, 2020

2019 article

The polarization field in Al-rich AlGaN multiple quantum wells

JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 58.

Sources: Web Of Science, ORCID
Added: July 29, 2019

2018 journal article

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

Applied Physics Letters, 112(6), 062102.

By: I. Bryan n, Z. Bryan n, S. Washiyama, P. Reddy, B. Gaddy, B. Sarkar, M. Breckenridge n, Q. Guo ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2018 conference paper

On Contacts to III-nitride deep-UV emitters

2018 3rd International Conference on Microwave and Photonics (ICMAP).

By: B. Sarkar, P. Reddy, A. Klump, R. Rounds n, M. Breckenridge, B. Haidet n, S. Mita*, R. Kirste*, R. Collazo, Z. Sitar

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2018 journal article

Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(6).

By: P. Reddy, S. Washiyama, W. Mecouch, L. Hernandez-Balderrama n, F. Kaess, M. Breckenridge n, B. Sarkar, B. Haidet ...

Sources: NC State University Libraries, ORCID
Added: December 10, 2018

2018 conference paper

Thermal conductivity of bulk and thin film beta-Ga2O3 measured by the 3 omega technique

OXIDE-BASED MATERIALS AND DEVICES IX, 10533.

Source: NC State University Libraries
Added: December 31, 2018

2016 journal article

High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

Journal of Applied Physics, 119(14), 145702.

By: P. Reddy, S. Washiyama, F. Kaess, M. Breckenridge n, L. Hernandez-Balderrama n, B. Haidet, D. Alden, A. Franke ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018