Mathew Hayden Breckenridge

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

APPLIED PHYSICS LETTERS, 118(2).

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

APPLIED PHYSICS LETTERS, 118(11).

On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers

APPLIED PHYSICS LETTERS, 118(12).

Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

APPLIED PHYSICS LETTERS, 118(4).

Strain Recovery and Defect Characterization in Mg-Implanted Homoepitaxial GaN on High-Quality GaN Substrates

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS.

The polarization field in Al-rich AlGaN multiple quantum wells

JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 58.

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

Applied Physics Letters, 112(6).

On Contacts to III-nitride deep-UV emitters

2018 3rd International Conference on Microwave and Photonics (ICMAP).

Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(6).

Thermal conductivity of bulk and thin film beta-Ga2O3 measured by the 3 omega technique

OXIDE-BASED MATERIALS AND DEVICES IX, 10533.

High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

Journal of Applied Physics, 119(14).