Mathew Breckenridge

Huynh, K., Wang, Y., Liao, M. E., Tweedie, J., Reddy, P., Breckenridge, M. H., … Goorsky, M. S. (2024). Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activation. JOURNAL OF APPLIED PHYSICS, 135(2). https://doi.org/10.1063/5.0179623

Stein, S. R., Khachariya, D., Mita, S., Breckenridge, M. H., Tweedie, J., Reddy, P., … Pavlidis, S. (2023). Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor. APPLIED PHYSICS EXPRESS, 16(3). https://doi.org/10.35848/1882-0786/acc443

Bagheri, P., Klump, A., Washiyama, S., Breckenridge, M. H., Kim, J. H., Guan, Y., … Sitar, Z. (2022). Doping and compensation in heavily Mg doped Al-rich AlGaN films. APPLIED PHYSICS LETTERS, 120(8). https://doi.org/10.1063/5.0082992

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3. https://doi.org/10.1002/pssr.202100619

Khachariya, D., Mita, S., Reddy, P., Dangi, S., Dycus, J. H., Bagheri, P., … Pavlidis, S. (2022). Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS, 120(17). https://doi.org/10.1063/5.0083966

Khachariya, D., Stein, S., Mecouch, W., Breckenridge, M. H., Rathkanthiwar, S., Mita, S., … Sitar, Z. (2022). Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing. APPLIED PHYSICS EXPRESS, 15(10). https://doi.org/10.35848/1882-0786/ac8f81

Breckenridge, M. H., Tweedie, J., Reddy, P., Guan, Y., Bagheri, P., Szymanski, D., … Sitar, Z. (2021). High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing. APPLIED PHYSICS LETTERS, 118(2). https://doi.org/10.1063/5.0038628

Breckenridge, M. H., Bagheri, P., Guo, Q., Sarkar, B., Khachariya, D., Pavlidis, S., … Sitar, Z. (2021). High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN. APPLIED PHYSICS LETTERS, 118(11). https://doi.org/10.1063/5.0042857

Khachariya, D., Szymanski, D., Breckenridge, M. H., Reddy, P., Kohn, E., Sitar, Z., … Pavlidis, S. (2021). On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers. APPLIED PHYSICS LETTERS, 118(12). https://doi.org/10.1063/5.0039888

Washiyama, S., Mirrielees, K. J., Bagheri, P., Baker, J. N., Kim, J.-H., Guo, Q., … Sitar, Z. (2021). Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping. APPLIED PHYSICS LETTERS, 118(4). https://doi.org/10.1063/5.0035957

Reddy, P., Khachariya, D., Mecouch, W., Breckenridge, M. H., Bagheri, P., Guan, Y., … Sitar, Z. (2021). Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN. APPLIED PHYSICS LETTERS, 119(18). https://doi.org/10.1063/5.0062831

Wang, Y., Huynh, K., Liao, M. E., Yu, H.-M., Bai, T., Tweedie, J., … Goorsky, M. S. (2020). Strain Recovery and Defect Characterization in Mg-Implanted Homoepitaxial GaN on High-Quality GaN Substrates. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 257(4). https://doi.org/10.1002/pssb.201900705

Guo, Q., Kirste, R., Mita, S., Tweedie, J., Reddy, P., Washiyama, S., … Sitar, Z. (2019, June 1). The polarization field in Al-rich AlGaN multiple quantum wells. JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 58. https://doi.org/10.7567/1347-4065/ab07a9

Bryan, I., Bryan, Z., Washiyama, S., Reddy, P., Gaddy, B., Sarkar, B., … Sitar, Z. (2018). Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD. APPLIED PHYSICS LETTERS, 112(6). https://doi.org/10.1063/1.5011984

Sarkar, B., Reddy, P., Klump, A., Rounds, R., Breckenridge, M. R., Haidet, B. B., … Sitar, Z. (2018). On Contacts to III-nitride deep-UV emitters. 2018 3rd International Conference on Microwave and Photonics (ICMAP). https://doi.org/10.1109/icmap.2018.8354575

Reddy, P., Washiyama, S., Mecouch, W., Hernandez-Balderrama, L. H., Kaess, F., Breckenridge, M. H., … Sitar, Z. (2018). Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(6). https://doi.org/10.1116/1.5050501

Blumenschein, N., Slomski, M., Paskov, P. P., Kaess, F., Breckenridge, M. H., Muth, J. F., & Paskova, T. (2018). Thermal conductivity of bulk and thin film beta-Ga2O3 measured by the 3 omega technique. OXIDE-BASED MATERIALS AND DEVICES IX, Vol. 10533. https://doi.org/10.1117/12.2288267

Reddy, P., Washiyama, S., Kaess, F., Breckenridge, M. H., Hernandez-Balderrama, L. H., Haidet, B. B., … Sitar, Z. (2016). High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies. JOURNAL OF APPLIED PHYSICS, 119(14). https://doi.org/10.1063/1.4945775