Milena Rebeca Bobea

High reflectivity III-nitride UV-C distributed Bragg reflectors for vertical cavity emitting lasers

Franke, A., Hoffmann, M. P., Kirste, R., Bobea, M., Tweedie, J., Kaess, F., … Sitar, Z. (2016, October 5). Journal of Applied Physics, Vol. 120.

Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control

Reddy, P., Hoffmann, M. P., Kaess, F., Bryan, Z., Bryan, I., Bobea, M., … Sitar, Z. (2016, November 14). Journal of Applied Physics, Vol. 120, p. 185704.

Strain engineered high reflectivity DBRs in the deep UV

Franke, A., Hoffmann, M. P., Hernandez-Balderrama, L., Kaess, F., Bryan, I., Washiyama, S., … Sitar, Z. (2016, February 26). Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE, Vol. 9748.

Optical characterization of Al- and N-polar AlN waveguides for integrated optics

Rigler, M., Buh, J., Hoffmann, M. P., Kirste, R., Bobea, M., Mita, S., … Zgonik, M. (2015, March 24). Applied Physics Express, Vol. 8.

Exciton transitions and oxygen as a donor in m-plane AlN homoepitaxial films

Bryan, Z., Bryan, I., Bobea, M., Hussey, L., Kirste, R., Sitar, Z., & Collazo, R. (2014, April 2). Journal of Applied Physics, Vol. 115.

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

Bryan, Z., Bryan, I., Gaddy, B. E., Reddy, P., Hussey, L., Bobea, M., … Collazo, R. (2014, December 1). Applied Physics Letters, Vol. 105, p. 222101.

Growth and characterization of Al_xGa_1−xN lateral polarity structures

Hoffmann, M. P., Kirste, R., Mita, S., Guo, W., Tweedie, J., Bobea, M., … Sitar, Z. (2014, November 18). Physica Status Solidi (a), Vol. 212, pp. 1039–1042.

HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties

Sochacki, T., Bryan, Z., Amilusik, M., Bobea, M., Fijalkowski, M., Bryan, I., … Sitar, Z. (2014, February 21). Journal of Crystal Growth, Vol. 394, pp. 55–60.

Homoepitaxial AlN thin films deposited on m-plane (11¯00) AlN substrates by metalorganic chemical vapor deposition

Bryan, I., Bryan, Z., Bobea, M., Hussey, L., Kirste, R., Collazo, R., & Sitar, Z. (2014, October 6). Journal of Applied Physics, Vol. 116.

Sapphire decomposition and inversion domains in N-polar aluminum nitride

Hussey, L., White, R. M., Kirste, R., Mita, S., Bryan, I., Guo, W., … Sitar, Z. (2014, January 20). Applied Physics Letters, Vol. 104.

Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

Guo, W., Bryan, Z., Xie, J., Kirste, R., Mita, S., Bryan, I., … Sitar, Z. (2014, March 14). Journal of Applied Physics, Vol. 115.

Ge doped GaN with controllable high carrier concentration for plasmonic applications

Applied Physics Letters, 103(24), 242107.

Refractive index of III-metal-polar and N-polar AlGaN waveguides grown by metal organic chemical vapor deposition

Rigler, M., Zgonik, M., Hoffmann, M. P., Kirste, R., Bobea, M., Collazo, R., … Gerhold, M. (2013, June 3). Applied Physics Letters, Vol. 102.

Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition

Bryan, I., Rice, A., Hussey, L., Bryan, Z., Bobea, M., Mita, S., … Sitar, Z. (2013, February 11). Applied Physics Letters, Vol. 102.

X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN

Bobea, M., Tweedie, J., Bryan, I., Bryan, Z., Rice, A., Dalmau, R., … Sitar, Z. (2013, March 28). Journal of Applied Physics, Vol. 113.

Fermi Level Control of Point Defects During Growth of Mg-Doped GaN

Bryan, Z., Hoffmann, M., Tweedie, J., Kirste, R., Callsen, G., Bryan, I., … Collazo, R. (2012, December 4). Journal of Electronic Materials, Vol. 42, pp. 815–819.