Works (16)

Updated: July 5th, 2023 15:44

2016 journal article

High reflectivity III-nitride UV-C distributed Bragg reflectors for vertical cavity emitting lasers

JOURNAL OF APPLIED PHYSICS, 120(13).

By: A. Franke n, M. Hoffmann n, R. Kirste*, M. Bobea n, J. Tweedie*, F. Kaess n, M. Gerhold, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 journal article

Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control

JOURNAL OF APPLIED PHYSICS, 120(18).

By: P. Reddy n, M. Hoffmann n, F. Kaess n, Z. Bryan n, I. Bryan n, M. Bobea n, A. Klump n, J. Tweedie* ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 article

Strain engineered high reflectivity DBRs in the deep UV

GALLIUM NITRIDE MATERIALS AND DEVICES XI, Vol. 9748.

By: A. Franke n, P. Hoffmann n, L. Hernandez-Balderrama n, F. Kaess n, I. Bryan n, S. Washiyama n, M. Bobea n, J. Tweedie n ...

co-author countries: United States of America 🇺🇸
author keywords: Distributed Bragg Reflector (DBR); strain relaxation; MOCVD; AlGaN; Nitride
Sources: Web Of Science, ORCID
Added: August 6, 2018

2015 article

Growth and characterization of AlxGa1-xN lateral polarity structures

Hoffmann, M. P., Kirste, R., Mita, S., Guo, W., Tweedie, J., Bobea, M., … Sitar, Z. (2015, May). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, pp. 1039–1042.

By: M. Hoffmann n, R. Kirste n, S. Mita*, W. Guo n, J. Tweedie n, M. Bobea n, I. Bryan n, Z. Bryan n ...

co-author countries: United States of America 🇺🇸
author keywords: AlGaN; growth; lateral polarity structures; optical phase matching
Sources: Web Of Science, ORCID
Added: August 6, 2018

2015 journal article

Optical characterization of Al- and N-polar AlN waveguides for integrated optics

APPLIED PHYSICS EXPRESS, 8(4).

By: M. Rigler*, J. Buh*, M. Hoffmann n, R. Kirste n, M. Bobea n, S. Mita*, M. Gerhold, R. Collazo n, Z. Sitar n, M. Zgonik*

co-author countries: Slovenia 🇸🇮 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 journal article

Exciton transitions and oxygen as a donor in m-plane AlN homoepitaxial films

JOURNAL OF APPLIED PHYSICS, 115(13).

By: Z. Bryan n, I. Bryan n, M. Bobea n, L. Hussey n, R. Kirste n, Z. Sitar n, R. Collazo n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 journal article

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

APPLIED PHYSICS LETTERS, 105(22).

By: Z. Bryan n, I. Bryan n, B. Gaddy n, P. Reddy n, L. Hussey n, M. Bobea n, W. Guo n, M. Hoffmann n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 journal article

HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties

JOURNAL OF CRYSTAL GROWTH, 394, 55–60.

By: T. Sochacki*, Z. Bryan n, M. Amilusik*, M. Bobea n, M. Fijalkowski*, I. Bryan n, B. Lucznik*, R. Collazo n ...

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
author keywords: Characterization; Hydride vapor phase epitaxy; GaN; Nitrides; Semiconducting III-V materials
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 journal article

Homoepitaxial AlN thin films deposited on m-plane (1(1)over-bar00) AlN substrates by metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 116(13).

By: I. Bryan n, Z. Bryan n, M. Bobea n, L. Hussey n, R. Kirste n, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 journal article

Sapphire decomposition and inversion domains in N-polar aluminum nitride

APPLIED PHYSICS LETTERS, 104(3).

By: L. Hussey n, R. White n, R. Kirste n, S. Mita*, I. Bryan n, W. Guo n, K. Osterman n, B. Haidet n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 journal article

Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

JOURNAL OF APPLIED PHYSICS, 115(10).

By: W. Guo n, Z. Bryan n, J. Xie*, R. Kirste n, S. Mita*, I. Bryan n, L. Hussey n, M. Bobea n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2013 journal article

Fermi Level Control of Point Defects During Growth of Mg-Doped GaN

JOURNAL OF ELECTRONIC MATERIALS, 42(5), 815–819.

By: Z. Bryan n, M. Hoffmann n, J. Tweedie n, R. Kirste n, G. Callsen*, I. Bryan n, A. Rice n, M. Bobea n ...

co-author countries: Germany 🇩🇪 United States of America 🇺🇸
author keywords: Mg; GaN; UV excitation; Photoluminescence; Metal-organic chemical vapordeposition (MOCVD)
Sources: Web Of Science, ORCID
Added: August 6, 2018

2013 journal article

Ge doped GaN with controllable high carrier concentration for plasmonic applications

Applied Physics Letters, 103(24), 242107.

By: R. Kirste n, M. Hoffmann n, E. Sachet n, M. Bobea n, Z. Bryan n, I. Bryan n, C. Nenstiel*, A. Hoffmann* ...

co-author countries: Germany 🇩🇪 United States of America 🇺🇸
Sources: NC State University Libraries, Crossref, ORCID
Added: August 6, 2018

2013 journal article

Refractive index of III-metal-polar and N-polar AlGaN waveguides grown by metal organic chemical vapor deposition

APPLIED PHYSICS LETTERS, 102(22).

By: M. Rigler*, M. Zgonik*, M. Hoffmann n, R. Kirste n, M. Bobea n, R. Collazo n, Z. Sitar n, S. Mita*, M. Gerhold*

co-author countries: Slovenia 🇸🇮 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2013 journal article

Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition

APPLIED PHYSICS LETTERS, 102(6).

By: I. Bryan n, A. Rice n, L. Hussey n, Z. Bryan n, M. Bobea n, S. Mita*, J. Xie*, R. Kirste n, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2013 journal article

X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN

JOURNAL OF APPLIED PHYSICS, 113(12).

By: M. Bobea n, J. Tweedie n, I. Bryan n, Z. Bryan n, A. Rice n, R. Dalmau*, J. Xie*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

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