John F Muth

Growth and characterization of AlInN/GaN superlattices

Xue, H., Palmese, E., Sekely, B. J., Little, B. D., Kish, F. A., Muth, J. F., & Wierer, J. J. (2024, March 15). JOURNAL OF CRYSTAL GROWTH, Vol. 630.

A Modular Endoscopic Tool and Laser Ablation Test-Bed for Studying Biological Tissue Ablation Control Strategies

IEEE TRANSACTIONS ON MEDICAL ROBOTICS AND BIONICS, 5(4), 811–818.

Designing and Testing a Closed-Loop Magnetically Actuated Laser Scanning System for Tissue Ablation

JOURNAL OF MEDICAL DEVICES-TRANSACTIONS OF THE ASME, 16(2).

Erratum: "Phonon-boundary scattering and thermal transport in AlxGa1<bold>-</bold>xN: Effect of layer thickness" [Appl. Phys. Lett. <bold>117</bold>, 252102 (2020)]

Tran, D. Q., Delgado-Carrascon, R., Muth, J. F., Paskova, T., Nawaz, M., Darakchieva, V., & Paskov, P. P. (2021, May 3). APPLIED PHYSICS LETTERS, Vol. 118.

Dielectric and conducting properties of unintentionally and Sn-doped beta-Ga2O3 studied by terahertz spectroscopy

JOURNAL OF APPLIED PHYSICS, 127(16).

Phonon-boundary scattering and thermal transport in AlxGa1-xN: Effect of layer thickness

APPLIED PHYSICS LETTERS, 117(25).

Self-Heating Characterization of $\beta$ -Ga2O3 Thin-Channel MOSFETs by Pulsed ${I}$ - ${V}$ and Raman Nanothermography

IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(1), 204–211.

Thermal conductivity of ultra-wide bandgap thin layers - High Al-content AlGaN and beta-Ga2O3

Tran, D. Q., Blumenschein, N., Mock, A., Sukkaew, P., Zhang, H., Muth, J. F., … Darakchieva, V. (2020, February 15). PHYSICA B-CONDENSED MATTER, Vol. 579.

Effect of Growth Pressure on PLD-Deposited Gallium Oxide Thin Films for Deep-UV Photodetectors

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 216(20).

Thermal conductivity of bulk and thin film beta-Ga2O3 measured by the 3 omega technique

OXIDE-BASED MATERIALS AND DEVICES IX, Vol. 10533.

A Wearable Hydration Sensor with Conformal Nanowire Electrodes

Advanced Healthcare Materials, 6(6), 1601159.

Anisotropic thermal conductivity of beta-Ga2O3 at elevated temperatures: Effect of Sn and Fe dopants

JOURNAL OF APPLIED PHYSICS, 121(23).

Building a 'deeper' understanding of underwater optical communications

Laser Focus World, 53(5), 37–40.

Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures - theory and experiment

AIP ADVANCES, 7(9).

Hydration Sensing: A Wearable Hydration Sensor with Conformal Nanowire Electrodes (Adv. Healthcare Mater. 6/2017)

Advanced Healthcare Materials, 6(6).

Thermal conductivity of bulk GaN grown by HVPE: Effect of Si doping

Slomski, M., Paskov, P. P., Leach, J. H., Muth, J. F., & Paskova, T. (2017, August). PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 254.

A MEMS infrared thermopile with phononic crystal structures and carbon nanotube absorption layer

2016 ieee sensors.

Low-Power Wearable Systems for Continuous Monitoring of Environment and Health for Chronic Respiratory Disease

IEEE Journal of Biomedical and Health Informatics, 20(5), 1251–1264.

Metal oxide gas sensing characterization by low frequency noise spectroscopy

2016 ieee sensors.

Flexible Technologies for Self-Powered Wearable Health and Environmental Sensing

PROCEEDINGS OF THE IEEE, 103(4), 665–681.

Incorporation of vanadium oxide films in optical fibers for temperature sensing and optical switching applications

OPTICAL MATERIALS EXPRESS, 4(6), 1128–1139.

Simulating channel losses in an underwater optical communication system

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION, 31(5), 920–934.

Thermal conductivity and dielectric properties of a TiO2-based electrical insulator for use with high temperature superconductor-based magnets

SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 27(9).

3D Printing of Free Standing Liquid Metal Microstructures

ADVANCED MATERIALS, 25(36), 5081–5085.

Enhanced Quench Propagation in Bi2Sr2CaCu2Ox and YBa2Cu3O7-x Coils via a Nanoscale Doped-Titania-Based Thermally Conducting Electrical Insulator

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 23(5).

Microstructures: 3D Printing of Free Standing Liquid Metal Microstructures (Adv. Mater. 36/2013)

Advanced Materials, 25(36), 4953–4953.

Shallow acceptor complexes in p-type ZnO

APPLIED PHYSICS LETTERS, 102(15).

Temporal Response of the Underwater Optical Channel for High-Bandwidth Wireless Laser Communications

IEEE JOURNAL OF OCEANIC ENGINEERING, 38(4), 730–742.

Transparent IGZO-Based Logic Gates

IEEE ELECTRON DEVICE LETTERS, 33(5), 673–675.

Modulated pulse laser with pseudorandom coding capabilities for underwater ranging, detection, and imaging

APPLIED OPTICS, 50(33), 6168–6178.

Underwater optical communication using a modulating retroreflector

Sea Technology, 52(5), 47–49.

Underwater optical communication using software defined radio over LED and laser based links

2011 - Milcom 2011 Military Communications Conference, 2057–2062.

5 mbps optical wireless communication with error correction coding for underwater sensor nodes

Oceans 2010.

A MEMS Blue/Green retroreflecting modulator for underwater optical communications

Oceans 2010.

Effect of oxygen pressure on the structure and luminescence of Eu-doped Gd2O3 thin films

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 207(8), 1949–1953.

Effect of scattering albedo on attenuation and polarization of light underwater

OPTICS LETTERS, 35(12), 2088–2090.

Fabrication of Nanoshell Arrays Using Directed Assembly of Nanospheres

IEEE SENSORS JOURNAL, 10(3), 617–620.

Fast All-Transparent Integrated Circuits Based on Indium Gallium Zinc Oxide Thin-Film Transistors

IEEE ELECTRON DEVICE LETTERS, 31(4), 317–319.

High-Throughput Continuous Beam Steering Using Rotating Polarization Gratings

IEEE PHOTONICS TECHNOLOGY LETTERS, 22(4), 200–202.

Optimal composition of europium gallium oxide thin films for device applications

JOURNAL OF APPLIED PHYSICS, 107(10).

Spectra and energy levels of Eu3+ in cubic phase Gd2O3

Physica Status Solidi (b), 247(7), 1807–1813.

An Amorphous Indium-Gallium-Zinc-Oxide Active Matrix Electroluminescent Pixel

JOURNAL OF DISPLAY TECHNOLOGY, 5(12), 438–445.

Backscatter suppression for underwater modulating retroreflector links using polarization discrimination

APPLIED OPTICS, 48(2), 328–337.

Patterned Hybrid Nanohole Array Surfaces for Cell Adhesion and Migration

LANGMUIR, 25(19), 11236–11238.

Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectric

APPLIED PHYSICS LETTERS, 94(12).

A visible transparent electroluminescent europium doped gallium oxide device

Wellenius, P., Suresh, A., Foreman, J. V., Everitt, H. O., & Muth, J. F. (2008, January 15). MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Vol. 146, pp. 252–255.

Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors

APPLIED PHYSICS LETTERS, 92(3).

Bright, low voltage europium doped gallium oxide thin film electroluminescent devices

APPLIED PHYSICS LETTERS, 92(2).

Engineering surface plasmon based fiber-optic sensors

Dhawan, A., & Muth, J. F. (2008, April 15). MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, Vol. 149, pp. 237–241.

Fabric and yarn structures for improving signal integrity in fabric-based electrical circuits

Washington, DC: U.S. Patent and Trademark Office.

Fabrication of a GaN p/n lateral polarity junction by polar doping selectivity

Physica Status Solidi (c), 5(6), 1977–1979.

Focused in beam fabrication of metallic nanostructures on end faces of optical fibers for chemical sensing applications

Dhawan, A., Muth, J. F., Leonard, D. N., Gerhold, M. D., Gleeson, J., Vo-Dinh, T., & Russell, P. E. (2008, November). JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 26, pp. 2168–2173.

Methods and systems for selectively connecting and disconnecting conductors in a fabric

Washington, DC: U.S. Patent and Trademark Office.

Modulating indium gallium zinc oxide transistor characteristics with discrete redox states of molecules embedded in the gate dielectric

APPLIED PHYSICS LETTERS, 92(22).

Transparent, high mobility of InGaZnO thin films deposited by PLD

Suresh, A., Gollakota, P., Wellenius, P., Dhawan, A., & Muth, J. F. (2008, February 15). THIN SOLID FILMS, Vol. 516, pp. 1326–1329.

Dielectric elastomer based prototype fiber actuators

SENSORS AND ACTUATORS A-PHYSICAL, 136(1), 321–328.

Electrical and mechanical properties of carbon-black-filled, electrospun nanocomposite fiber webs

JOURNAL OF APPLIED POLYMER SCIENCE, 104(4), 2410–2417.

High performance transparent thin film transistors based on indium gallium zinc oxide as the channel material

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, pp. 587–590.

Nitrogen acceptors in bulk ZnO (000(1)over-bar)) substrates and homoepitaxial ZnO films

JOURNAL OF APPLIED PHYSICS, 102(2).

Planar ZnO ultraviolet modulator

APPLIED PHYSICS LETTERS, 91(7).

Room temperature pulsed laser deposited indium gallium zinc oxide channel based transparent thin film transistors

APPLIED PHYSICS LETTERS, 90(12).

Tunable photoluminescence of polymer doped with PbSe quantum dots

Voitenko, I., Muth, J. F., Gerhold, M., Cui, D., & Xu, J. (2007, September). MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, Vol. 27, pp. 1078–1081.

Accurate dependence of gallium nitride thermal conductivity on dislocation density

APPLIED PHYSICS LETTERS, 89(9).

Growth and fabrication of AlGaN-based ultraviolet light emitting diodes on 6H-SiC(0001) substrates and the effect of carrier-blocking layers on their emission characteristics

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 127(2-3), 169–179.

In-line fiber optic structures for environmental sensing applications

OPTICS LETTERS, 31(10), 1391–1393.

Optical characterization of Eu-doped β-Ga2O3 thin films

Applied Physics Letters, 88(22), 221906.

Origins of parasitic emissions from 353 nm AlGaN-based ultraviolet light emitting diodes over SiC substrates

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45(5A), 4083–4086.

Photoluminescence study of ZnO films codoped with nitrogen and tellurium

Journal of Applied Physics, 100(12), 123102.

Plasmon resonances of gold nanoparticles incorporated inside an optical fibre matrix

NANOTECHNOLOGY, 17(10), 2504–2511.

Thermal conductivity, dislocation density and GaN device design

SUPERLATTICES AND MICROSTRUCTURES, Vol. 40, pp. 338–342.

Effect of carrier blocking layers on the emission characteristics of AlGaN-based ultraviolet light emitting diodes

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(10), 7254–7259.

Electronic textiles today and potential for the future

Proceedings of International Conference on Emerging Trends in Polymers and Textiles : 7th, 8th January 2005. New Delhi.

Enhanced photoconductivity of ZnO films Co-doped with nitrogen and tellurium

Applied Physics Letters, 86(21), 211918.

Gallium nitride surface quantum wells

Applied Physics Letters, 87(19), 192117.

Growth of ZnO films on C-plane (0001) sapphire by pulsed electron deposition (PED)

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 119(2), 210–212.

Methods and systems for selectively connecting and disconnecting conductors in a fabric

Washington, DC: U.S. Patent and Trademark Office.

Refractive indices of ZnSiN2 on r-plane sapphire

Applied Physics Letters, 86(12), 121906.

Developing Portable Acoustic Arrays on a Large-Scale E-Textile Substrate

International Journal of Clothing Science and Technology, 16(1/2), 73–83.

Woven fabric-based electrical circuits - Part I: Evaluating interconnect methods

Textile Research Journal, 74(10), 913–919.

Woven fabric-based electrical circuits - Part II: Yarn and fabric structures to reduce crosstalk noise in woven fabric-based circuits

TEXTILE RESEARCH JOURNAL, 74(11), 955–960.

Method for making optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys

Washington, DC: U.S. Patent and Trademark Office.

Optical and structural studies of hydride vapor phase epitaxy grown GaN

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(3), 701–705.

Planar gallium nitride ultraviolet optical modulator

APPLIED PHYSICS LETTERS, 83(14), 2748–2750.

Wavelength-dependent Raman scattering of hydrogenated amorphous silicon carbon with red, green, and blue light excitation

JOURNAL OF MATERIALS RESEARCH, 18(4), 768–771.

Electron-beam-induced optical memory effects in GaN

APPLIED PHYSICS LETTERS, 80(15), 2675–2677.

Modular observation crawler and sensing instrument and method for operating same

Washington, DC: U.S. Patent and Trademark Office.

Novel cubic ZnxMg1-xO epitaxial hetero structures on Si (100) substrates

Solid State Communications, 121(1), 9–13.

Structural, optical and magnetic properties of diluted magnetic semiconducting Zn1-xMnxO films

SOLID STATE COMMUNICATIONS, 121(6-7), 371–374.

Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1-xN (0 <= x <= 0.13)

Roberts, J. C., Parker, C. A., Muth, J. F., Leboeuf, S. F., Aumer, M. E., Bedair, S. M., & Reed, M. J. (2002, January 1).

X-ray and Raman analyses of GaN produced by ultrahigh-rate magnetron sputter epitaxy

APPLIED PHYSICS LETTERS, 81(10), 1797–1799.

Optical metastability of subband gap (2.2 eV) yellow luminescence in GaN

APPLIED PHYSICS LETTERS, 79(3), 281–283.

Photoluminescence and electrical characteristics of the two-dimensional electron gas in Si delta-doped GaN layers

APPLIED PHYSICS LETTERS, 78(12), 1688–1690.

Growth and characterization of GaN single crystals

JOURNAL OF CRYSTAL GROWTH, 208(1-4), 100–106.

Optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys

Washington, DC: U.S. Patent and Trademark Office.

Quantum confinement of E-1 and E-2 transitions in Ge quantum dots embedded in an Al2O3 or an AlN matrix

APPLIED PHYSICS LETTERS, 76(1), 43–45.

Quantum confinement of E1 and E2 transitions in Ge quantum dots embedded in Al203 or an AlN matrix

In T. S. J. Piqueras & M. S. Unlu (Eds.), Optical microstructural characterization of semiconductors (Materials Research Society proceedings, vol. 588). Pittsburgh, Pa.: Materials Research Society.

Refractive indices and absorption coefficients of MgxZn1-xO alloys

APPLIED PHYSICS LETTERS, 76(8), 979–981.

Size effect in germanium nanostructures fabricated by pulsed laser deposition

In S. K. H. Hahn & J. C. Parker (Eds.), Nanophase and Nanocomposite Materials III (Materials Research Society proceedings; vol. 581). Pittsburgh, Pa.: Materials Research Society.

Structural and optical property investigations on Mg-Alloying in epitaxial zinc oxide films on sapphire

Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.2).

Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy

JOURNAL OF APPLIED PHYSICS, 86(1), 281–288.

Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.3).

Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition

JOURNAL OF APPLIED PHYSICS, 85(11), 7884–7887.

Linear optical properties of a heavily Mg-doped Al0.09Ga0.91N epitaxial layer

APPLIED PHYSICS LETTERS, 74(21), 3188–3190.

Optical and structural properties of epitaxial MgxZn1-xO alloys

APPLIED PHYSICS LETTERS, 75(21), 3327–3329.

Optical and structural studies of Ge nanocrystals embedded in AlN matrix fabricated by pulsed laser deposition

APPLIED PHYSICS LETTERS, 75(9), 1222–1224.

Optical information storage systems and methods using heterostructures comprising ternary group III-V nitride semiconductor materials

Washington, DC: U.S. Patent and Trademark Office.

Ordinary and extraordinary refractive indices for AlxGa1-xN epitaxial layers

APPLIED PHYSICS LETTERS, 75(1), 67–69.

Quantum confinement of above-band-bap transitions in Ge quantum dots embedded in an Al2O3 or AIN matrix

In T. S. J. Piqueras & M. S. Unlu (Eds.), Optical microstructural characterization of semiconductors (Materials Research Society proceedings, vol. 588). Pittsburgh, Pa.: Materials Research Society.

Germanium nanostructures fabricated by pulsed laser deposition

Microcrystalline and nanocrystalline semiconductors--1998: symposium held November 30-December 3, 1998, Boston, Massachusetts, U.S.A.

Growth of high quality single crystal ZnO films on sapphire by pulsed laser ablation

Advances in laser ablation of materials: Symposium held April 13-16, 1998, San Francisco, California, U.S.A. (Materials Research Society symposia proceedings ; v. 526)., 305. Warrendale, Pa.: Materials Research Society.

Microstructure and IR range optical properties of pure DLC and DLC containing dopants prepared by pulsed laser deposition

Advances in laser ablation of materials: Symposium held April 13-16, 1998, San Francisco, California, U.S.A. (Materials Research Society symposia proceedings ; v. 526)., 331. Warrendale, Pa.: Materials Research Society.

Optical metastability in InGaN/GaN heterostructures

Compound semiconductors 1997: Proceedings of the IEEE Twenty-fourth International Symposium on Compound Semiconductors held in San Diego, California, 8-11 September 1997, 375–378. Bristol; Philadelphia: Institute of Physics Pub.

Optical properties of wide bandgap II-V nitride semiconductors

In M. Zhang & K. N. Tu (Eds.), 1998 5th International Conference on Solid-State and Integrated Circuit Technology: Proceedings, October 21-23, 1998, Beijing, China (pp. 609–612).

Visible-blind GaN Schottky barrier detectors grown on Si(111)

APPLIED PHYSICS LETTERS, 72(5), 551–553.

Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements

APPLIED PHYSICS LETTERS, 71(18), 2572–2574.

Observation of lasing from photopumped InGaN/GaN heterostructures in an edge emitting configuration

JOURNAL OF APPLIED PHYSICS, 81(4), 2021–2023.

Optical data storage in InGaN/GaN heterostructures

APPLIED PHYSICS LETTERS, 71(10), 1382–1384.