John Muth

Xue, H., Palmese, E., Sekely, B. J., Little, B. D., Kish, F. A., Muth, J. F., & Wierer, J. J. (2024, March 15). Growth and characterization of AlInN/GaN superlattices. JOURNAL OF CRYSTAL GROWTH, Vol. 630. https://doi.org/10.1016/j.jcrysgro.2024.127567

Mohammadbagherpoor, H., Muth, J., & Grant, E. (2023). A Modular Endoscopic Tool and Laser Ablation Test-Bed for Studying Biological Tissue Ablation Control Strategies. IEEE TRANSACTIONS ON MEDICAL ROBOTICS AND BIONICS, 5(4), 811–818. https://doi.org/10.1109/TMRB.2023.3309947

Mohammadbagherpoor, H., Acemoglu, A., Mattos, L. S., Caldwell, D., Johnson, J. J., Muth, J., & Grant, E. (2022). Designing and Testing a Closed-Loop Magnetically Actuated Laser Scanning System for Tissue Ablation. JOURNAL OF MEDICAL DEVICES-TRANSACTIONS OF THE ASME, 16(2). https://doi.org/10.1115/1.4053073

Tran, D. Q., Delgado-Carrascon, R., Muth, J. F., Paskova, T., Nawaz, M., Darakchieva, V., & Paskov, P. P. (2021, May 3). Erratum: "Phonon-boundary scattering and thermal transport in AlxGa1<bold>-</bold>xN: Effect of layer thickness" [Appl. Phys. Lett. <bold>117</bold>, 252102 (2020)]. APPLIED PHYSICS LETTERS, Vol. 118. https://doi.org/10.1063/5.0054625

Blumenschein, N., Kadlec, C., Romanyuk, O., Paskova, T., Muth, J. F., & Kadlec, F. (2020). Dielectric and conducting properties of unintentionally and Sn-doped beta-Ga2O3 studied by terahertz spectroscopy. JOURNAL OF APPLIED PHYSICS, 127(16). https://doi.org/10.1063/1.5143735

Tran, D. Q., Delgado-Carrasco, R., Muth, J. F., Paskova, T., Nawaz, M., Darakchieva, V., & Paskov, P. P. (2020). Phonon-boundary scattering and thermal transport in AlxGa1-xN: Effect of layer thickness. APPLIED PHYSICS LETTERS, 117(25). https://doi.org/10.1063/5.0031404

Blumenschein, N. A., Moser, N. A., Heller, E. R., Miller, N. C., Green, A. J., Popp, A., … Jessen, G. H. (2020). Self-Heating Characterization of $\beta$ -Ga2O3 Thin-Channel MOSFETs by Pulsed ${I}$ - ${V}$ and Raman Nanothermography. IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(1), 204–211. https://doi.org/10.1109/TED.2019.2951502

Tran, D. Q., Blumenschein, N., Mock, A., Sukkaew, P., Zhang, H., Muth, J. F., … Darakchieva, V. (2020, February 15). Thermal conductivity of ultra-wide bandgap thin layers - High Al-content AlGaN and beta-Ga2O3. PHYSICA B-CONDENSED MATTER, Vol. 579. https://doi.org/10.1016/j.physb.2019.411810

Blumenschein, N., Paskova, T., & Muth, J. F. (2019). Effect of Growth Pressure on PLD-Deposited Gallium Oxide Thin Films for Deep-UV Photodetectors. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 216(20). https://doi.org/10.1002/pssa.201900098

Blumenschein, N., Slomski, M., Paskov, P. P., Kaess, F., Breckenridge, M. H., Muth, J. F., & Paskova, T. (2018). Thermal conductivity of bulk and thin film beta-Ga2O3 measured by the 3 omega technique. OXIDE-BASED MATERIALS AND DEVICES IX, Vol. 10533. https://doi.org/10.1117/12.2288267

Yao, S., Myers, A., Malhotra, A., Lin, F., Bozkurt, A., Muth, J. F., & Zhu, Y. (2017). A Wearable Hydration Sensor with Conformal Nanowire Electrodes. Advanced Healthcare Materials, 6(6), 1601159. https://doi.org/10.1002/ADHM.201601159

Slomski, M., Blumenschein, N., Paskov, P. P., Muth, J. F., & Paskova, T. (2017). Anisotropic thermal conductivity of beta-Ga2O3 at elevated temperatures: Effect of Sn and Fe dopants. JOURNAL OF APPLIED PHYSICS, 121(23). https://doi.org/10.1063/1.4986478

Muth, J. (2017). Building a 'deeper' understanding of underwater optical communications. Laser Focus World, 53(5), 37–40.

Paskov, P. P., Slomski, M., Leach, J. H., Muth, J. F., & Paskova, T. (2017). Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures - theory and experiment. AIP ADVANCES, 7(9). https://doi.org/10.1063/1.4989626

Yao, S., Myers, A., Malhotra, A., Lin, F., Bozkurt, A., Muth, J. F., & Zhu, Y. (2017). Hydration Sensing: A Wearable Hydration Sensor with Conformal Nanowire Electrodes (Adv. Healthcare Mater. 6/2017). Advanced Healthcare Materials, 6(6). https://doi.org/10.1002/adhm.201770031

Slomski, M., Paskov, P. P., Leach, J. H., Muth, J. F., & Paskova, T. (2017, August). Thermal conductivity of bulk GaN grown by HVPE: Effect of Si doping. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 254. https://doi.org/10.1002/pssb.201600713

Gray, K. F., Muth, J. F., & Carr, W. (2016). A MEMS infrared thermopile with phononic crystal structures and carbon nanotube absorption layer. 2016 ieee sensors. https://doi.org/10.1109/icsens.2016.7808771

Dieffenderfer, J., Goodell, H., Mills, S., McKnight, M., Yao, S., Lin, F., … Bozkurt, A. (2016). Low-Power Wearable Systems for Continuous Monitoring of Environment and Health for Chronic Respiratory Disease. IEEE Journal of Biomedical and Health Informatics, 20(5), 1251–1264. https://doi.org/10.1109/jbhi.2016.2573286

Lim, M., Malhotra, A., Mills, S., Muth, J., Lee, B., & Misra, V. (2016). Metal oxide gas sensing characterization by low frequency noise spectroscopy. 2016 ieee sensors. https://doi.org/10.1109/icsens.2016.7808835

Misra, V., Bozkurt, A., Calhoun, B., Jackson, T. N., Jur, J. S., Lach, J., … Zhu, Y. (2015). Flexible Technologies for Self-Powered Wearable Health and Environmental Sensing. PROCEEDINGS OF THE IEEE, 103(4), 665–681. https://doi.org/10.1109/jproc.2015.2412493

Dhawan, A., Sharma, Y., Brickson, L., & Muth, J. F. (2014). Incorporation of vanadium oxide films in optical fibers for temperature sensing and optical switching applications. OPTICAL MATERIALS EXPRESS, 4(6), 1128–1139. https://doi.org/10.1364/ome.4.001128

Cox, W., & Muth, J. (2014). Simulating channel losses in an underwater optical communication system. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION, 31(5), 920–934. https://doi.org/10.1364/josaa.31.000920

Ishmael, S. A., Slomski, M., Luo, H., White, M., Hunt, A., Mandzy, N., … Schwartz, J. (2014). Thermal conductivity and dielectric properties of a TiO2-based electrical insulator for use with high temperature superconductor-based magnets. SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 27(9). https://doi.org/10.1088/0953-2048/27/9/095018

Ladd, C., So, J.-H., Muth, J., & Dickey, M. D. (2013). 3D Printing of Free Standing Liquid Metal Microstructures. ADVANCED MATERIALS, 25(36), 5081–5085. https://doi.org/10.1002/adma.201301400

Ishmael, S., Luo, H., White, M., Hunte, F., Liu, X. T., Mandzy, N., … Schwartz, J. (2013). Enhanced Quench Propagation in Bi2Sr2CaCu2Ox and YBa2Cu3O7-x Coils via a Nanoscale Doped-Titania-Based Thermally Conducting Electrical Insulator. IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 23(5). https://doi.org/10.1109/tasc.2013.2269535

Ladd, C., So, J.-H., Muth, J., & Dickey, M. D. (2013). Microstructures: 3D Printing of Free Standing Liquid Metal Microstructures (Adv. Mater. 36/2013). Advanced Materials, 25(36), 4953–4953. https://doi.org/10.1002/ADMA.201370225

Reynolds, J. G., Reynolds, C. L., Jr., Mohanta, A., Muth, J. F., Rowe, J. E., Everitt, H. O., & Aspnes, D. E. (2013). Shallow acceptor complexes in p-type ZnO. APPLIED PHYSICS LETTERS, 102(15). https://doi.org/10.1063/1.4802753

Cochenour, B., Mullen, L., & Muth, J. (2013). Temporal Response of the Underwater Optical Channel for High-Bandwidth Wireless Laser Communications. IEEE JOURNAL OF OCEANIC ENGINEERING, 38(4), 730–742. https://doi.org/10.1109/joe.2013.2255811

Luo, H., Wellenius, P., Lunardi, L., & Muth, J. F. (2012). Transparent IGZO-Based Logic Gates. IEEE ELECTRON DEVICE LETTERS, 33(5), 673–675. https://doi.org/10.1109/led.2012.2186784

Cochenour, B., Mullen, L., & Muth, J. (2011). Modulated pulse laser with pseudorandom coding capabilities for underwater ranging, detection, and imaging. APPLIED OPTICS, 50(33), 6168–6178. https://doi.org/10.1364/ao.50.006168

Cox, W., Gray, K., & Muth, J. (2011). Underwater optical communication using a modulating retroreflector. Sea Technology, 52(5), 47–49.

Cox, W. C., Simpson, J. A., & Muth, J. F. (2011). Underwater optical communication using software defined radio over LED and laser based links. 2011 - Milcom 2011 Military Communications Conference, 2057–2062. https://doi.org/10.1109/milcom.2011.6127621

Simpson, J. A., Cox, W. C., Krier, J. R., Cochenour, B., Hughes, B. L., & Muth, J. F. (2010). 5 mbps optical wireless communication with error correction coding for underwater sensor nodes. Oceans 2010. https://doi.org/10.1109/oceans.2010.5664429

Cox, W. C., Gray, K. F., Simpson, J. A., Cochenour, B., Hughes, B. L., & Muth, J. F. (2010). A MEMS Blue/Green retroreflecting modulator for underwater optical communications. Oceans 2010. https://doi.org/10.1109/oceans.2010.5664432

Wellenius, P., Smith, E. R., Wu, P. C., Everitt, H. O., & Muth, J. F. (2010). Effect of oxygen pressure on the structure and luminescence of Eu-doped Gd2O3 thin films. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 207(8), 1949–1953. https://doi.org/10.1002/pssa.201026071

Cochenour, B., Mullen, L., & Muth, J. (2010). Effect of scattering albedo on attenuation and polarization of light underwater. OPTICS LETTERS, 35(12), 2088–2090. https://doi.org/10.1364/ol.35.002088

Lou, Y., Lunardi, L. M., & Muth, J. F. (2010). Fabrication of Nanoshell Arrays Using Directed Assembly of Nanospheres. IEEE SENSORS JOURNAL, 10(3), 617–620. https://doi.org/10.1109/jsen.2009.2038586

Suresh, A., Wellenius, P., Baliga, V., Luo, H., Lunardi, L. M., & Muth, J. F. (2010). Fast All-Transparent Integrated Circuits Based on Indium Gallium Zinc Oxide Thin-Film Transistors. IEEE ELECTRON DEVICE LETTERS, 31(4), 317–319. https://doi.org/10.1109/led.2010.2041525

Oh, C., Kim, J., Muth, J., Serati, S., & Escuti, M. J. (2010). High-Throughput Continuous Beam Steering Using Rotating Polarization Gratings. IEEE PHOTONICS TECHNOLOGY LETTERS, 22(4), 200–202. https://doi.org/10.1109/LPT.2009.2037155

Wellenius, P., Smith, E. R., LeBoeuf, S. M., Everitt, H. O., & Muth, J. F. (2010). Optimal composition of europium gallium oxide thin films for device applications. JOURNAL OF APPLIED PHYSICS, 107(10). https://doi.org/10.1063/1.3319670

Smith, E. R., Gruber, J. B., Wellenius, P., Muth, J. F., & Everitt, H. O. (2010). Spectra and energy levels of Eu3+ in cubic phase Gd2O3. Physica Status Solidi (b), 247(7), 1807–1813. https://doi.org/10.1002/pssb.200945602

Wellenius, P., Suresh, A., Luo, H., Lunardi, L. M., & Muth, J. F. (2009). An Amorphous Indium-Gallium-Zinc-Oxide Active Matrix Electroluminescent Pixel. JOURNAL OF DISPLAY TECHNOLOGY, 5(12), 438–445. https://doi.org/10.1109/JDT.2009.2024012

Mullen, L., Cochenour, B., Rabinovich, W., Mahon, R., & Muth, J. (2009). Backscatter suppression for underwater modulating retroreflector links using polarization discrimination. APPLIED OPTICS, 48(2), 328–337. https://doi.org/10.1364/AO.48.000328

Westcott, N. P., Lou, Y., Muth, J. F., & Yousaf, M. N. (2009). Patterned Hybrid Nanohole Array Surfaces for Cell Adhesion and Migration. LANGMUIR, 25(19), 11236–11238. https://doi.org/10.1021/la9023234

Suresh, A., Novak, S., Wellenius, P., Misra, V., & Muth, J. F. (2009). Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectric. APPLIED PHYSICS LETTERS, 94(12). https://doi.org/10.1063/1.3106629

Wellenius, P., Suresh, A., Foreman, J. V., Everitt, H. O., & Muth, J. F. (2008, January 15). A visible transparent electroluminescent europium doped gallium oxide device. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Vol. 146, pp. 252–255. https://doi.org/10.1016/j.mseb.2007.07.060

Suresh, A., & Muth, J. F. (2008). Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors. APPLIED PHYSICS LETTERS, 92(3). https://doi.org/10.1063/1.2824758

Wellenius, P., Suresh, A., & Muth, J. F. (2008). Bright, low voltage europium doped gallium oxide thin film electroluminescent devices. APPLIED PHYSICS LETTERS, 92(2). https://doi.org/10.1063/1.2824846

Dhawan, A., & Muth, J. F. (2008, April 15). Engineering surface plasmon based fiber-optic sensors. MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, Vol. 149, pp. 237–241. https://doi.org/10.1016/j.mseb.2007.09.076

Dhawan, A., Ghosh, T. K., Seyam, A. M., & Muth, J. (2008). Fabric and yarn structures for improving signal integrity in fabric-based electrical circuits. Washington, DC: U.S. Patent and Trademark Office.

Collazo, R., Mita, S., Rice, A., Dalmau, R., Wellenius, P., Muth, J., & Sitar, Z. (2008). Fabrication of a GaN p/n lateral polarity junction by polar doping selectivity. Physica Status Solidi (c), 5(6), 1977–1979. https://doi.org/10.1002/pssc.200778624

Dhawan, A., Muth, J. F., Leonard, D. N., Gerhold, M. D., Gleeson, J., Vo-Dinh, T., & Russell, P. E. (2008, November). Focused in beam fabrication of metallic nanostructures on end faces of optical fibers for chemical sensing applications. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 26, pp. 2168–2173. https://doi.org/10.1116/1.3013329

Dhawan, A., Ghosh, T. K., Muth, J., & Seyam, A. (2008). Methods and systems for selectively connecting and disconnecting conductors in a fabric. Washington, DC: U.S. Patent and Trademark Office.

Sarkar, S., Suresh, A., Myers, F. B., Muth, J. F., & Misra, V. (2008). Modulating indium gallium zinc oxide transistor characteristics with discrete redox states of molecules embedded in the gate dielectric. APPLIED PHYSICS LETTERS, 92(22). https://doi.org/10.1063/1.2918981

Suresh, A., Gollakota, P., Wellenius, P., Dhawan, A., & Muth, J. F. (2008, February 15). Transparent, high mobility of InGaZnO thin films deposited by PLD. THIN SOLID FILMS, Vol. 516, pp. 1326–1329. https://doi.org/10.1016/j.tsf.2007.03.153

Arora, S., Ghosh, T., & Muth, J. (2007). Dielectric elastomer based prototype fiber actuators. SENSORS AND ACTUATORS A-PHYSICAL, 136(1), 321–328. https://doi.org/10.1016/j.sna.2006.10.044

Hwang, J., Muth, J., & Ghosh, T. (2007). Electrical and mechanical properties of carbon-black-filled, electrospun nanocomposite fiber webs. JOURNAL OF APPLIED POLYMER SCIENCE, 104(4), 2410–2417. https://doi.org/10.1002/app.25914

Suresh, A., Wellenius, P., & Muth, J. F. (2007). High performance transparent thin film transistors based on indium gallium zinc oxide as the channel material. 2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, pp. 587–590. https://doi.org/10.1109/iedm.2007.4419007

Adekore, B. T., Pierce, J. M., Davisb, R. F., Barlage, D. W., & Muth, J. F. (2007). Nitrogen acceptors in bulk ZnO (000(1)over-bar)) substrates and homoepitaxial ZnO films. JOURNAL OF APPLIED PHYSICS, 102(2). https://doi.org/10.1063/1.2751097

Zhang, X. Y., Dhawan, A., Wellenius, P., Suresh, A., & Muth, J. F. (2007). Planar ZnO ultraviolet modulator. APPLIED PHYSICS LETTERS, 91(7). https://doi.org/10.1063/1.2770995

Suresh, A., Wellenius, P., Dhawan, A., & Muth, J. (2007). Room temperature pulsed laser deposited indium gallium zinc oxide channel based transparent thin film transistors. APPLIED PHYSICS LETTERS, 90(12). https://doi.org/10.1063/1.2716355

Voitenko, I., Muth, J. F., Gerhold, M., Cui, D., & Xu, J. (2007, September). Tunable photoluminescence of polymer doped with PbSe quantum dots. MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, Vol. 27, pp. 1078–1081. https://doi.org/10.1016/j.msec.2006.09.018

Mion, C., Muth, J. F., Preble, E. A., & Hanser, D. (2006). Accurate dependence of gallium nitride thermal conductivity on dislocation density. APPLIED PHYSICS LETTERS, 89(9). https://doi.org/10.1063/1.2335972

Park, J. S., Reitmeier, Z. J., Fothergill, D., Zhang, X. Y., Muth, J. F., & Davis, R. F. (2006). Growth and fabrication of AlGaN-based ultraviolet light emitting diodes on 6H-SiC(0001) substrates and the effect of carrier-blocking layers on their emission characteristics. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 127(2-3), 169–179. https://doi.org/10.1016/j.mseb.2005.10.019

Dhawan, A., & Muth, J. F. (2006). In-line fiber optic structures for environmental sensing applications. OPTICS LETTERS, 31(10), 1391–1393. https://doi.org/10.1364/OL.31.001391

Gollakota, P., Dhawan, A., Wellenius, P., Lunardi, L. M., Muth, J. F., Saripalli, Y. N., … Everitt, H. O. (2006). Optical characterization of Eu-doped β-Ga2O3 thin films. Applied Physics Letters, 88(22), 221906. https://doi.org/10.1063/1.2208368

Park, J. S., Fothergill, D. W., Wellenius, P., Bishop, S. M., Muth, J. F., & Davis, R. F. (2006). Origins of parasitic emissions from 353 nm AlGaN-based ultraviolet light emitting diodes over SiC substrates. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45(5A), 4083–4086. https://doi.org/10.1143/jjap.45.4083

Porter, H. L., Muth, J. F., Narayan, J., Foreman, J. V., & Everitt, H. O. (2006). Photoluminescence study of ZnO films codoped with nitrogen and tellurium. Journal of Applied Physics, 100(12), 123102. https://doi.org/10.1063/1.2372312

Dhawan, A., & Muth, J. F. (2006). Plasmon resonances of gold nanoparticles incorporated inside an optical fibre matrix. NANOTECHNOLOGY, 17(10), 2504–2511. https://doi.org/10.1088/0957-4484/17/10/011

Mion, C., Muth, J. F., Preble, E. A., & Hanser, D. (2006). Thermal conductivity, dislocation density and GaN device design. SUPERLATTICES AND MICROSTRUCTURES, Vol. 40, pp. 338–342. https://doi.org/10.1016/j.spmi.2006.07.017

Park, J. S., Fothergill, D. W., Zhang, X. Y., Reitmeier, Z. J., Muth, J. F., & Davis, R. F. (2005). Effect of carrier blocking layers on the emission characteristics of AlGaN-based ultraviolet light emitting diodes. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(10), 7254–7259. https://doi.org/10.1143/jjap.44.7254

Ghosh, T. K., Dhawan, A., & Muth, J. (2005). Electronic textiles today and potential for the future. Proceedings of International Conference on Emerging Trends in Polymers and Textiles : 7th, 8th January 2005. New Delhi.

Porter, H. L., Cai, A. L., Muth, J. F., & Narayan, J. (2005). Enhanced photoconductivity of ZnO films Co-doped with nitrogen and tellurium. Applied Physics Letters, 86(21), 211918. https://doi.org/10.1063/1.1923194

Muth, J. F., Zhang, X., Cai, A., Fothergill, D., Roberts, J. C., Rajagopal, P., … Linthicum, K. J. (2005). Gallium nitride surface quantum wells. Applied Physics Letters, 87(19), 192117. https://doi.org/10.1063/1.2123396

Porter, H. L., Mion, C., Cai, A. L., Zhang, X., & Muth, J. F. (2005). Growth of ZnO films on C-plane (0001) sapphire by pulsed electron deposition (PED). MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 119(2), 210–212. https://doi.org/10.1016/j.mseb.2005.02.042

Dhawan, A., Ghosh, T. K., Muth, J., & Seyam, A. (2005). Methods and systems for selectively connecting and disconnecting conductors in a fabric. Washington, DC: U.S. Patent and Trademark Office.

Cook, B. P., Everitt, H. O., Avrutsky, I., Osinsky, A., Cai, A., & Muth, J. F. (2005). Refractive indices of ZnSiN2 on r-plane sapphire. Applied Physics Letters, 86(12), 121906. https://doi.org/10.1063/1.1865325

Grant, E., Luthy, K. A., Muth, J. F., Mattos, L. S., Braly, J. C., Seyam, A.-F., … Natarajan, K. (2004). Developing Portable Acoustic Arrays on a Large-Scale E-Textile Substrate. International Journal of Clothing Science and Technology, 16(1/2), 73–83. https://doi.org/10.1108/09556220410520379

Dhawan, A., Seyam, A.-F., ghosh, & Muth, J. F. (2004). Woven fabric-based electrical circuits - Part I: Evaluating interconnect methods. Textile Research Journal, 74(10), 913–919. https://doi.org/10.1177/004051750407401011

Dhawan, A., Ghosh, T. K., Seyam, A. M., & Muth, J. F. (2004). Woven fabric-based electrical circuits - Part II: Yarn and fabric structures to reduce crosstalk noise in woven fabric-based circuits. TEXTILE RESEARCH JOURNAL, 74(11), 955–960. https://doi.org/10.1177/004051750407401103

Narayan, J., Sharma, A. K., & Muth, J. F. (2003). Method for making optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys. Washington, DC: U.S. Patent and Trademark Office.

Chang, Y. C., Cai, A. L., Muth, J. F., Kolbas, R. M., Park, M., Cuomo, J. J., … Bumgarner, J. (2003). Optical and structural studies of hydride vapor phase epitaxy grown GaN. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(3), 701–705. https://doi.org/10.1116/1.1568346

Oberhofer, A. E., Muth, J. F., Johnson, M. A. L., Chen, Z. Y., Fleet, E. F., & Cooper, G. D. (2003). Planar gallium nitride ultraviolet optical modulator. APPLIED PHYSICS LETTERS, 83(14), 2748–2750. https://doi.org/10.1063/1.1615675

Park, M., Sakhrani, V., Maria, J. P., Cuomo, J. J., Teng, C. W., Muth, J. F., … Nemanich, R. J. (2003). Wavelength-dependent Raman scattering of hydrogenated amorphous silicon carbon with red, green, and blue light excitation. JOURNAL OF MATERIALS RESEARCH, 18(4), 768–771. https://doi.org/10.1557/JMR.2003.0106

Chang, Y. C., Cai, A. L., Johnson, M. A. L., Muth, J. F., Kolbas, R. M., Reitmeier, Z. J., … Davis, R. F. (2002). Electron-beam-induced optical memory effects in GaN. APPLIED PHYSICS LETTERS, 80(15), 2675–2677. https://doi.org/10.1063/1.1469222

Grant, E., Muth, J. F., Cottle, J. S., Dessent, B. E., & Cox, J. A. (2002). Modular observation crawler and sensing instrument and method for operating same. Washington, DC: U.S. Patent and Trademark Office.

Narayan, J., Sharma, A. K., Kvit, A., Jin, C., Muth, J. F., & Holland, O. W. (2002). Novel cubic ZnxMg1-xO epitaxial hetero structures on Si (100) substrates. Solid State Communications, 121(1), 9–13.

Tiwari, A., Jin, C., Kvit, A., Kumar, D., Muth, J. F., & Narayan, J. (2002). Structural, optical and magnetic properties of diluted magnetic semiconducting Zn1-xMnxO films. SOLID STATE COMMUNICATIONS, 121(6-7), 371–374. https://doi.org/10.1016/S0038-1098(01)00464-1

Roberts, J. C., Parker, C. A., Muth, J. F., Leboeuf, S. F., Aumer, M. E., Bedair, S. M., & Reed, M. J. (2002, January 1). Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1-xN (0 <= x <= 0.13).

Park, M., Maria, J. P., Cuomo, J. J., Chang, Y. C., Muth, J. F., Kolbas, R. M., … Bumgarner, J. (2002). X-ray and Raman analyses of GaN produced by ultrahigh-rate magnetron sputter epitaxy. APPLIED PHYSICS LETTERS, 81(10), 1797–1799. https://doi.org/10.1063/1.1506781

Chang, Y. C., Oberhofer, A. E., Muth, J. F., Kolbas, R. M., & Davis, R. F. (2001). Optical metastability of subband gap (2.2 eV) yellow luminescence in GaN. APPLIED PHYSICS LETTERS, 79(3), 281–283. https://doi.org/10.1063/1.1381417

Teng, C. W., Aboelfotoh, M. O., Davis, R. F., Muth, J. F., & Kolbas, R. M. (2001). Photoluminescence and electrical characteristics of the two-dimensional electron gas in Si delta-doped GaN layers. APPLIED PHYSICS LETTERS, 78(12), 1688–1690. https://doi.org/10.1063/1.1353836

Balkas, C. M., Sitar, Z., Bergman, L., Shmagin, I. K., Muth, J. F., Kolbas, R., … Davis, R. F. (2000). Growth and characterization of GaN single crystals. JOURNAL OF CRYSTAL GROWTH, 208(1-4), 100–106. https://doi.org/10.1016/S0022-0248(99)00445-5

Narayan, J., Sharma, A. K., & Muth, J. F. (2000). Optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys. Washington, DC: U.S. Patent and Trademark Office.

Teng, C. W., Muth, J. F., Kolbas, R. M., Hassan, K. M., Sharma, A. K., Kvit, A., & Narayan, J. (2000). Quantum confinement of E-1 and E-2 transitions in Ge quantum dots embedded in an Al2O3 or an AlN matrix. APPLIED PHYSICS LETTERS, 76(1), 43–45. https://doi.org/10.1063/1.125650

Teng, C. W., Muth, J. F., Kolbas, R. M., Hassan, K. M., Sharma, A. K., & Narayan, J. (2000). Quantum confinement of E1 and E2 transitions in Ge quantum dots embedded in Al203 or an AlN matrix. In T. S. J. Piqueras & M. S. Unlu (Eds.), Optical microstructural characterization of semiconductors  (Materials Research Society proceedings, vol. 588). Pittsburgh, Pa.: Materials Research Society.

Teng, C. W., Muth, J. F., Ozgur, U., Bergmann, M. J., Everitt, H. O., Sharma, A. K., … Narayan, J. (2000). Refractive indices and absorption coefficients of MgxZn1-xO alloys. APPLIED PHYSICS LETTERS, 76(8), 979–981. https://doi.org/10.1063/1.125912

Hassan, K. M., Sharma, A. K., Narayan, J., Muth, J. F., Teng, C. W., & Kolbas, R. M. (2000). Size effect in germanium nanostructures fabricated by pulsed laser deposition. In S. K. H. Hahn & J. C. Parker (Eds.), Nanophase and Nanocomposite Materials III  (Materials Research Society proceedings; vol. 581). Pittsburgh, Pa.: Materials Research Society.

Sharma, A. K., Jin, C., Narayan, J., Teng, C. W., Muth, J. F., Kolbas, R. M., & Holland, O. W. (2000). Structural and optical property investigations on Mg-Alloying in epitaxial zinc oxide films on sapphire. MRS Internet Journal of Nitride Semiconductor Research, (2000).

Muth, J. F., Brown, J. D., Johnson, M. A. L., Yu, Z. H., Kolbas, R. M., Cook, J. W., & Schetzina, J. F. (1999). Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.2).

Joshkin, V. A., Parker, C. A., Bedair, S. M., Muth, J. F., Shmagin, I. K., Kolbas, R. M., … Molnar, R. J. (1999). Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy. JOURNAL OF APPLIED PHYSICS, 86(1), 281–288. https://doi.org/10.1063/1.370727

Yu, Z. H., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Muth, J. F., Cook, J. W., … Edmond, J. S. (1999). Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.3). https://doi.org/10.1557/s1092578300002878

Muth, J. F., Kolbas, R. M., Sharma, A. K., Oktyabrsky, S., & Narayan, J. (1999). Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition. JOURNAL OF APPLIED PHYSICS, 85(11), 7884–7887. https://doi.org/10.1063/1.370601

Bergmann, M. J., Ozgur, U., Casey, H. C., Muth, J. F., Chang, Y. C., Kolbas, R. M., … Schurman, M. (1999). Linear optical properties of a heavily Mg-doped Al0.09Ga0.91N epitaxial layer. APPLIED PHYSICS LETTERS, 74(21), 3188–3190. https://doi.org/10.1063/1.124102

Sharma, A. K., Narayan, J., Muth, J. F., Teng, C. W., Jin, C., Kvit, A., … Holland, O. W. (1999). Optical and structural properties of epitaxial MgxZn1-xO alloys. APPLIED PHYSICS LETTERS, 75(21), 3327–3329. https://doi.org/10.1063/1.125340

Hassan, K. M., Sharma, A. K., Narayan, J., Muth, J. F., Teng, C. W., & Kolbas, R. M. (1999). Optical and structural studies of Ge nanocrystals embedded in AlN matrix fabricated by pulsed laser deposition. APPLIED PHYSICS LETTERS, 75(9), 1222–1224. https://doi.org/10.1063/1.124648

Shmagin, I. K., Muth, J. F., & Kolbas, R. M. (1999). Optical information storage systems and methods using heterostructures comprising ternary group III-V nitride semiconductor materials. Washington, DC: U.S. Patent and Trademark Office.

Bergmann, M. J., Ozgur, U., Casey, H. C., Everitt, H. O., & Muth, J. F. (1999). Ordinary and extraordinary refractive indices for AlxGa1-xN epitaxial layers. APPLIED PHYSICS LETTERS, 75(1), 67–69. https://doi.org/10.1063/1.124278

Teng, C. W., Muth, J. F., Kolbas, R. M., Hassan, K. M., Sharma, A. K., Kvit, A., & Narayan, J. (1999). Quantum confinement of above-band-bap transitions in Ge quantum dots embedded in an Al2O3 or AIN matrix. In T. S. J. Piqueras & M. S. Unlu (Eds.), Optical microstructural characterization of semiconductors  (Materials Research Society proceedings, vol. 588). Pittsburgh, Pa.: Materials Research Society.

Hassan, K. M., Sharma, A. K., Narayan, J., Muth, J. F., Teng, C. W., & Kolbas, R. M. (1998). Germanium nanostructures fabricated by pulsed laser deposition. Microcrystalline and nanocrystalline semiconductors--1998: symposium held November 30-December 3, 1998, Boston, Massachusetts, U.S.A.

Sharma, A. K., Dovidenko, K., Oktyabrsky, S., Moxey, D. E., Muth, J. F., Kolbas, R. M., & Narayan, J. (1998). Growth of high quality single crystal ZnO films on sapphire by pulsed laser ablation. Advances in laser ablation of materials: Symposium held April 13-16, 1998, San Francisco, California, U.S.A.  (Materials Research Society symposia proceedings ; v. 526)., 305. Warrendale, Pa.: Materials Research Society.

Wei, Q., Sharma, A. K., Narayan, R. J., Ravindra, N. M., Oktyabrsky, S., Sankar, J., … Narayan, J. (1998). Microstructure and IR range optical properties of pure DLC and DLC containing dopants prepared by pulsed laser deposition. Advances in laser ablation of materials: Symposium held April 13-16, 1998, San Francisco, California, U.S.A.  (Materials Research Society symposia proceedings ; v. 526)., 331. Warrendale, Pa.: Materials Research Society.

Shmagin, I. K., Muth, J. F., Kolbas, R. M., Dupuis, R. D., Grudowski, P. A., Eiting, C. J., … Lambert, D. J. H. (1998). Optical metastability in InGaN/GaN heterostructures. Compound semiconductors 1997: Proceedings of the IEEE Twenty-fourth International Symposium on Compound Semiconductors held in San Diego, California, 8-11 September 1997, 375–378. Bristol; Philadelphia: Institute of Physics Pub.

Kolbas, R. M., Shmagin, I. K., & Muth, J. F. (1998). Optical properties of wide bandgap II-V nitride semiconductors. In M. Zhang & K. N. Tu (Eds.), 1998 5th International Conference on Solid-State and Integrated Circuit Technology: Proceedings, October 21-23, 1998, Beijing, China (pp. 609–612).

Osinsky, A., Gangopadhyay, S., Yang, J. W., Gaska, R., Kuksenkov, D., Temkin, H., … Kolbas, R. M. (1998). Visible-blind GaN Schottky barrier detectors grown on Si(111). APPLIED PHYSICS LETTERS, 72(5), 551–553. https://doi.org/10.1063/1.120755

Muth, J. F., Lee, J. H., Shmagin, I. K., Kolbas, R. M., Casey, H. C., Keller, B. P., … DenBaars, S. P. (1997). Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements. APPLIED PHYSICS LETTERS, 71(18), 2572–2574. https://doi.org/10.1063/1.120191

Shmagin, I. K., Muth, J. F., Kolbas, R. M., Krishnankutty, S., Keller, S., Mishra, U. K., & DenBaars, S. P. (1997). Observation of lasing from photopumped InGaN/GaN heterostructures in an edge emitting configuration. JOURNAL OF APPLIED PHYSICS, 81(4), 2021–2023. https://doi.org/10.1063/1.364058

Shmagin, I. K., Muth, J. F., Kolbas, R. M., Dupuis, R. D., Grudowski, P. A., Eiting, C. J., … Lambert, D. J. H. (1997). Optical data storage in InGaN/GaN heterostructures. APPLIED PHYSICS LETTERS, 71(10), 1382–1384. https://doi.org/10.1063/1.119900

Shmagin, I. K., Muth, J. F., Lee, J. H., Kolbas, R. M., Balkas, C. M., Sitar, Z., & Davis, R. F. (1997). Optical metastability in bulk GaN single crystals. APPLIED PHYSICS LETTERS, 71(4), 455–457. https://doi.org/10.1063/1.119577

Shmagin, I. K., Muth, J. F., Kolbas, R. M., Krishnankutty, S., Keller, S., Abare, A. C., … DenBaars, S. P. (1997, March). Photoluminescence characteristics of GaN/InGaN/GaN quantum wells. JOURNAL OF ELECTRONIC MATERIALS, Vol. 26, pp. 325–329. https://doi.org/10.1007/s11664-997-0172-y

Shmagin, I. K., Muth, J. F., Kolbas, R. M., Mack, M. P., Abare, A. C., Keller, S., … DenBaars, S. P. (1997). Reconfigurable optical properties in InGaN/GaN quantum wells. APPLIED PHYSICS LETTERS, 71(11), 1455–1457. https://doi.org/10.1063/1.119935

Balkas, C. M., Sitar, Z., Zheleva, T., Bergman, L., Shmagin, I. K., Muth, J. F., … Davis, R. F. (1996). Growth of bulk AIN and GaN single crystals by sublimation. III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.  (Materials Research Society symposia proceedings ; v. 449), 41–46. Pittsburgh, Pa.: Materials Research Society.

Shmagin, I. K., Muth, J. F., Kolbas, R. M., Krishnankkutty, S., Keller, S., Mishra, U. K., & DenBaars, S. P. (1996). Stimulated emission and gain measurements from InGaN/GaN heterostructures. In III-V nitrides: Symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.(Materials Research Society symposia proceedings ; v. 449) (pp. 1209–1214). Pittsburgh, Pa.: Materials Research Society.