@article{blumenschein_kadlec_romanyuk_paskova_muth_kadlec_2020, title={Dielectric and conducting properties of unintentionally and Sn-doped beta-Ga2O3 studied by terahertz spectroscopy}, volume={127}, ISSN={["1089-7550"]}, DOI={10.1063/1.5143735}, abstractNote={Dielectric and conducting properties of unintentionally doped bulk and Sn-doped thin film β-Ga2O3 samples were studied using time-domain terahertz spectroscopy. Complex permittivity and optical conductivity spectra from 0.25 to 2.5 THz were obtained experimentally over a broad temperature range. The low-temperature spectra of the unintentionally doped sample were fit using a model involving two oscillators. The parameters of one of them show an unusual temperature dependence, in particular, a pronounced increase in the oscillator strength upon heating above 50 K. This is interpreted as an absorption due to thermally activated charge carriers moving in localized potential minima linked to the unintentional doping. Upon heating, the influence of this optical conductivity mechanism strongly increases, and the sample becomes opaque in the THz range near 100 K. The nanocrystalline Sn-doped Ga2O3 thin film sample exhibits a much higher optical conductivity than the unintentionally doped bulk sample, and its spectra are remarkably stable over a broad temperature range (4–750 K). This first study of β-Ga2O3 based on phase-sensitive THz spectroscopy reveals how the impurities influence the high-frequency conductive properties of the material.}, number={16}, journal={JOURNAL OF APPLIED PHYSICS}, author={Blumenschein, Nick and Kadlec, Christelle and Romanyuk, Oleksandr and Paskova, Tania and Muth, John F. and Kadlec, Filip}, year={2020}, month={Apr} }
 @article{blumenschein_paskova_muth_2019, title={Effect of Growth Pressure on PLD-Deposited Gallium Oxide Thin Films for Deep-UV Photodetectors}, volume={216}, ISSN={["1862-6319"]}, DOI={10.1002/pssa.201900098}, abstractNote={Pulsed laser deposition (PLD) is used to grow ‐oriented single‐crystalline β‐gallium oxide (β‐Ga2O3) thin films on c‐plane sapphire substrates by optimized growth temperature and pressure. The morphology and crystallinity of the thin films are examined using X‐ray diffraction and atomic force microscopy. The thin films are used as the semiconductor layer for metal–semiconductor–metal (MSM) photodetector (PD) devices with various electrode designs. The ultraviolet photodetectors are characterized under 250 nm illumination, showing a high current amplitude increase over dark current conditions that approaches three orders of magnitude at a 6 V bias for an optimized growth pressure of 1 × 10−3 torr. The photodetectors' transient response is also measured, allowing for the defect analysis to be performed. A peak spectral responsivity of 30.45 A W−1 is measured at 250 nm incident illumination.}, number={20}, journal={PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE}, author={Blumenschein, Nicholas and Paskova, Tania and Muth, John F.}, year={2019}, month={Oct} }
 @article{tran_blumenschein_mock_sukkaew_zhang_muth_paskova_paskov_darakchieva_2020, title={Thermal conductivity of ultra-wide bandgap thin layers - High Al-content AlGaN and beta-Ga2O3}, volume={579}, ISSN={["1873-2135"]}, DOI={10.1016/j.physb.2019.411810}, abstractNote={Transient thermoreflectance (TTR) technique is employed to study the thermal conductivity of β-Ga2O3 and high Al-content AlxGa1-xN semiconductors, which are very promising materials for high-power device applications. The experimental data are analyzed with the Callaway's model taking into account all relevant phonon scattering processes. Our results show that out-of-plane thermal conductivity of high Al-content AlxGa1-xN and (−201) β-Ga2O3 is of the same order of magnitude and approximately one order lower than that of GaN or AlN. The low thermal conductivity is attributed to the dominant phonon-alloy scattering in AlxGa1-xN and to the strong Umklapp phonon-phonon scattering in β-Ga2O3. It is also found that the phonon-boundary scattering is essential in thin β-Ga2O3 and AlxGa1-xN layers even at high temperatures and the thermal conductivity strongly deviates from the common 1/T temperature dependence.}, journal={PHYSICA B-CONDENSED MATTER}, author={Tran, Dat Q. and Blumenschein, Nicholas and Mock, Alyssa and Sukkaew, Pitsiri and Zhang, Hengfang and Muth, John F. and Paskova, Tania and Paskov, Plamen P. and Darakchieva, Vanya}, year={2020}, month={Feb} }
 @article{blumenschein_slomski_paskov_kaess_breckenridge_muth_paskova_2018, title={Thermal conductivity of bulk and thin film beta-Ga2O3 measured by the 3 omega technique}, volume={10533}, ISSN={["1996-756X"]}, DOI={10.1117/12.2288267}, abstractNote={Thermal conductivity of undoped and Sn-doped β-Ga2O3 bulk and single-crystalline thin films have been measured by the 3ω technique. The bulk samples were grown by edge-defined film-field growth (EFG) method, while the thin films were grown on c-plane sapphire by pulsed-laser deposition (PLD). All samples were with (-201) surface orientation. Thermal conductivity of bulk samples was calculated along the in-plane and cross-plane crystallographic directions, yielding a maximum value of ~ 29 W/m-K in the [010] direction at room temperature. A slight thermal conductivity decrease was observed in the Sn-doped bulk samples, which was attributed to enhanced phonon-impurity scattering. The differential 3ω method was used for β-Ga2O3 thin film samples due to the small film thickness. Results show that both undoped and Sndoped films have a much lower thermal conductivity than that of the bulk samples, which is consistent with previous reports in the literature showing a linear relationship between thermal conductivity and film thickness. Similarly to bulk samples, Sn-doped thin films have exhibited a thermal conductivity decrease. However, this decrease was found to be much greater in thin film samples, and increased with Sn doping concentration. A correlation between thermal conductivity and defect/dislocation density was made for the undoped thin films.}, journal={OXIDE-BASED MATERIALS AND DEVICES IX}, author={Blumenschein, N. and Slomski, M. and Paskov, P. P. and Kaess, F. and Breckenridge, M. H. and Muth, J. F. and Paskova, T.}, year={2018} }
 @article{slomski_blumenschein_paskov_muth_paskova_2017, title={Anisotropic thermal conductivity of beta-Ga2O3 at elevated temperatures: Effect of Sn and Fe dopants}, volume={121}, ISSN={["1089-7550"]}, DOI={10.1063/1.4986478}, abstractNote={The thermal conductivity of undoped, Sn-doped, and Fe-doped β-Ga2O3 bulk crystals was measured by the 3ω technique in the temperature range of 295–410 K. A unique approach for extracting the thermal conductivity along the lateral and transverse heat flow directions was used in order to determine the thermal conductivity along different crystallographic directions. The data analysis at room temperature confirmed the expected anisotropy of the thermal conductivity of β-Ga2O3, revealing the highest value of ∼29 W/m K in the [010] direction. The thermal conductivity of the Sn-doped and Fe-doped β-Ga2O3 samples was found to be lower than that of the undoped samples due to the enhanced phonon-impurity scattering contribution, which reduces the thermal conductivity. This tendency was maintained for the thermal conductivity at elevated temperatures. The thermal conductivity in all samples decreased with increasing temperature, but the slope of the temperature dependence was found to depend on both the doping and the crystallographic orientation.}, number={23}, journal={JOURNAL OF APPLIED PHYSICS}, author={Slomski, M. and Blumenschein, N. and Paskov, P. P. and Muth, J. F. and Paskova, T.}, year={2017}, month={Jun} }