Robert J. Nemanich

Band alignment at AlN/Si (111) and (001) interfaces

JOURNAL OF APPLIED PHYSICS, 118(4).

Cleaning of pyrolytic hexagonal boron nitride surfaces

SURFACE AND INTERFACE ANALYSIS, 47(7), 798–803.

Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 33(5).

Hydrogen desorption kinetics for aqueous hydrogen fluoride and remote hydrogen plasma processed silicon (001) surfaces

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 33(5).

Desorption and sublimation kinetics for fluorinated aluminum nitride surfaces

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 32(5).

Gas source molecular beam epitaxy of scandium nitride on silicon carbide and gallium nitride surfaces

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 32(6).

Photoemission investigation of the Schottky barrier at the Sc/3C-SiC (111) interface

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 252(2), 391–396.

Valence and conduction band alignment at ScN interfaces with 3C-SiC (111) and 2H-GaN (0001)

APPLIED PHYSICS LETTERS, 105(8).

Titanium silicide islands on atomically clean Si(100): Identifying single electron tunneling effects

JOURNAL OF APPLIED PHYSICS, 107(12).

Conducting atomic force microscopy studies of nanoscale cobalt silicide Schottky barriers on Si(111) and Si(100)

JOURNAL OF APPLIED PHYSICS, 105(8).

Hydrogen desorption kinetics and band bending for 6H-SiC(0001) surfaces

[Review of ]. SURFACE SCIENCE, 603(20), 3104–3118.

Theory of space charge limited regime of thermionic energy converter with negative electron affinity emitter

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 27(3), 1132–1141.

Electrical and photoelectrical characterization of undoped and S-doped nanocrystalline diamond films

JOURNAL OF APPLIED PHYSICS, 103(8).

Fluorescence quenching effects of nanocrystalline diamond surfaces

DIAMOND AND RELATED MATERIALS, 18(1), 82–87.

Run-in behavior of nanocrystalline diamond coatings studied by in situ tribometry

WEAR, 265(3-4), 477–489.

Single molecule measurements with photoelectron emission microscopy

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 26(4), 1461–1465.

Temperature dependence of single-asperity diamond-diamond friction elucidated using AFM and MD Simulations

JOURNAL OF PHYSICAL CHEMISTRY C, 112(25), 9358–9369.

Coarsening dynamics of nanoscale Ti-silicide islands on Si surfaces

Journal of the Korean Physical Society, 50(3), 575–580.

Considerations for a high-performance thermionic energy conversion device based on a negative electron affinity emitter

PHYSICAL REVIEW B, 76(24).

Dynamics of vapor-phase organophosphates on silicon and OTS

TRIBOLOGY LETTERS, 27(3), 269–276.

Kinetics of Ga and In desorption from (7x7)Si(111) and (3x3)6H-SiC(0001) surfaces

SURFACE SCIENCE, 602(2), 405–415.

The surface oxidation potential of melanosomes measured by free electron laser-photoelectron emission microscopy

PHOTOCHEMISTRY AND PHOTOBIOLOGY, 83(3), 692–697.

Titanium Interlayer Mediated Epitaxy of CoSi2 on Si1-xGex

THIN SOLID FILMS, 516(8), 1809–1817.

"Thermal stability of TiO2, ZrO2, or HfO2 on Si(100) by photoelectron emission microscopy" (vol 99, pg 023519, 2006)

Zeman, M. C., Fulton, C. C., Lucovsky, G., Nemanich, R. J., & Yang, W. C. (2006, May 15). JOURNAL OF APPLIED PHYSICS, Vol. 99.

Age-dependent photoionization thresholds of melanosomes and lipofuscin isolated from human retinal pigment epithelium cells

PHOTOCHEMISTRY AND PHOTOBIOLOGY, 82(6), 1475–1481.

Electron emission microscopy of nano-crystal graphitic films as high current density electron sources

DIAMOND AND RELATED MATERIALS, Vol. 15, pp. 875–879.

Electronic properties of the Zr-ZrO2-SiO2-Si(100) gate stack structure

JOURNAL OF APPLIED PHYSICS, 99(6).

Fabrication of metallic nanowires on a ferroelectric template via photochemical reaction

NANOTECHNOLOGY, 17(19), 4946–4949.

Field penetration and its contribution to field enhanced thermionic electron emission from nanocrystalline diamond films

DIAMOND AND RELATED MATERIALS, Vol. 15, pp. 2006–2009.

Investigation of the effect of the total pressure and methane concentration on the growth rate and quality of diamond thin films grown by MPCVD

DIAMOND AND RELATED MATERIALS, Vol. 15, pp. 1784–1788.

Photo and field electron emission microscopy, from sulfur doped nanocrystalline diamond films

DIAMOND AND RELATED MATERIALS, Vol. 15, pp. 880–883.

Photoionization thresholds of melanins obtained from free electron laser-photoelectron emission microscopy, femtosecond transient absorption spectroscopy and electron paramagnetic resonance measurements of oxygen photoconsumption

PHOTOCHEMISTRY AND PHOTOBIOLOGY, 82(3), 733–737.

The effect of Schottky barrier lowering and nonplanar emitter geometry on the performance of a thermionic energy converter

DIAMOND AND RELATED MATERIALS, Vol. 15, pp. 870–874.

The surface oxidation potential of human neuromelanin reveals a spherical architecture with a pheomelanin core and a eumelanin surface

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 103(40), 14785–14789.

Thermal stability of TiO2, ZrO2, or HfO2 on Si(100) by photoelectron emission microscopy

JOURNAL OF APPLIED PHYSICS, 99(2).

Using negative electron affinity diamond emitters to mitigate space charge in vacuum thermionic energy conversion device

DIAMOND AND RELATED MATERIALS, Vol. 15, pp. 2082–2085.

AlN bulk crystals grown on SiC seeds

Dalmau, R., Schlesser, R., Rodriguez, B. J., Nemanich, R. J., & Sitar, Z. (2005, July 15). JOURNAL OF CRYSTAL GROWTH, Vol. 281, pp. 68–74.

Applications of free-electron lasers in the biological and material sciences

[Review of ]. PHOTOCHEMISTRY AND PHOTOBIOLOGY, 81(4), 711–735.

Atomic force microscopy-based experimental setup for studying domain switching dynamics in ferroelectric capacitors

REVIEW OF SCIENTIFIC INSTRUMENTS, 76(2).

Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra

MICROELECTRONICS RELIABILITY, Vol. 45, pp. 827–830.

Conduction band-edge d-states in high-k dielectrics due to Jahn-Teller term splittings

Lucovsky, G., Fulton, C. C., Zhang, Y., Luning, J., Edge, L., Whitten, J. L., … Afanase'v, VV. (2005, August 22). THIN SOLID FILMS, Vol. 486, pp. 129–135.

Conduction band-edge states associated with the removal of d-state degeneracies by the Jahn-Teller effect

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 5(1), 65–83.

Direct studies of domain switching dynamics in thin film ferroelectric capacitors

APPLIED PHYSICS LETTERS, 87(8).

Emission characterization from nitrogen-doped diamond with respect to energy conversion

DIAMOND AND RELATED MATERIALS, Vol. 15, pp. 217–220.

Field enhanced thermionic electron emission from sulfur doped nanocrystalline diamond films

DIAMOND AND RELATED MATERIALS, Vol. 14, pp. 704–708.

Final state effects in VUV and soft X-ray absorption spectra of transition metal oxides and silicate alloys: comparisons between experiment and ab initio calculations

Lucovsky, G., Zhang, Y., Fulton, C. C., Zou, Y., Nemanich, R. J., Ade, H., & Whitten, J. L. (2005, June). JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, Vol. 144, pp. 917–919.

Formation of stable titanium germanosilicide thin films on Si1-xGex

JOURNAL OF APPLIED PHYSICS, 97(11).

High negative ion yield from light molecule scattering

Scheer, J. A., Wieser, M., Wurz, P., Bochsler, P., Hertzberg, E., Fuselier, S. A., … Schleberger, M. (2005, April). NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol. 230, pp. 330–339.

Hollow to bamboolike internal structure transition observed in carbon nanotube films

JOURNAL OF APPLIED PHYSICS, 98(1).

Imaging temperature-dependent field emission from carbon nanotube films: Single versus multiwalled

APPLIED PHYSICS LETTERS, 86(6).

Increased field-emission site density from regrown carbon nanotube films

JOURNAL OF APPLIED PHYSICS, 97(10).

Localized emission from flat diamond cathodes

DIAMOND AND RELATED MATERIALS, 15(9), 1418–1423.

NICE: an instrument for direct mass spectrometric measurement of interstellar neutral gas

MEASUREMENT SCIENCE AND TECHNOLOGY, 16(8), 1667–1676.

Oxidation potentials of human eumelanosomes and plheomelanosomes

PHOTOCHEMISTRY AND PHOTOBIOLOGY, 81(1), 145–148.

Photo electron emission microscopy of polarity-patterned materials

Yang, W. C., Rodriguez, B. J., Gruverman, A., & Nemanich, R. J. (2005, April 27). JOURNAL OF PHYSICS-CONDENSED MATTER, Vol. 17, pp. S1415–S1426.

Scanning probe investigation of surface charge and surface potential of GaN-based heterostructures

APPLIED PHYSICS LETTERS, 86(11).

Secondary electron emission of chemical-vapor-deposited diamond by impact of slow H+, D+, H-2(+), C+, O+, and O-2(+) ions

JOURNAL OF APPLIED PHYSICS, 98(3).

Self-organized nanoscale Ge dots and dashes on SiGe/Si superlattices

JOURNAL OF APPLIED PHYSICS, 98(2).

Structural, microstructural, and electrical properties of gold films and Schottky contacts on remote plasma-cleaned, n-type ZnO{0001} surfaces

JOURNAL OF APPLIED PHYSICS, 97(10).

Studies of the coupling of final d*-states in mixed Hf and Ti oxides (HfO2)(x)(TiOx)(1-x) and other complex oxides

Fulton, C. C., Lucovsky, G., Zhang, Y., Zou, Y., Nemanich, R. J., Ade, H., & Whitten, J. L. (2005, June). JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, Vol. 144, pp. 913–916.

Sulfur doped nanocrystalline diamond films as field enhancement based thermionic emitters and their role in energy conversion

DIAMOND AND RELATED MATERIALS, Vol. 14, pp. 2051–2054.

Surfactant effects on carbon nanotube interactions with human keratinocytes

NANOMEDICINE-NANOTECHNOLOGY BIOLOGY AND MEDICINE, 1(4), 293–299.

Synchrotron x-ray studies of vitreous SiO2 over Si(001). I. Anisotropic glass contribution

PHYSICAL REVIEW B, 71(4).

Synchrotron x-ray studies of vitreous SiO2 over Si(001). II. Crystalline contribution

PHYSICAL REVIEW B, 71(4).

Thermionic field emission from nanocrystalline diamond-coated silicon tip arrays

PHYSICAL REVIEW B, 72(16).

A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices

Hinkle, C. L., Fulton, C., Nemanich, R. J., & Lucovsky, G. (2004, April). MICROELECTRONIC ENGINEERING, Vol. 72, pp. 257–262.

Direct correlation of surface morphology with electron emission sites for intrinsic nanocrystalline diamond films

DIAMOND AND RELATED MATERIALS, Vol. 13, pp. 1022–1025.

Domain growth kinetics in lithium niobate single crystals studied by piezoresponse force microscopy

APPLIED PHYSICS LETTERS, 86(1).

Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 (ZrO2) layers sandwiched between thicker SiO2 layers

Hinkle, C. L., Fulton, C., Nemanich, R. J., & Lucovsky, G. (2004, September 20). SURFACE SCIENCE, Vol. 566, pp. 1185–1189.

Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers

Applied Surface Science, 234(37990), 240–245.

Experimental studies of the formation process and morphologies of carbon nanotubes with bamboo mode structures

DIAMOND AND RELATED MATERIALS, Vol. 13, pp. 1287–1291.

Fibrinogen adsorption onto microwave plasma chemical vapor deposited diamond films

DIAMOND AND RELATED MATERIALS, Vol. 13, pp. 595–599.

Growth and field emission properties of small diameter carbon nanotube films

DIAMOND AND RELATED MATERIALS, Vol. 14, pp. 714–718.

In situ cleaning and characterization of oxygen- and zinc-terminated, n-type, ZnO{0001} surfaces

JOURNAL OF APPLIED PHYSICS, 95(10), 5856–5864.

Interface instabilities and electronic properties of ZrO2 on silicon (100)

JOURNAL OF APPLIED PHYSICS, 96(5), 2665–2673.

Investigation of the mechanism of polarization switching in ferroelectric capacitors by three- dimensional piezoresponse force microscopy

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 80(1), 99–103.

Multi-walled carbon nanotube interactions with human epidermal keratinocytes

TOXICOLOGY LETTERS, 155(3), 377–384.

On the thermionic emission from nitrogen-doped diamond films with respect to energy conversion

DIAMOND AND RELATED MATERIALS, Vol. 13, pp. 2052–2055.

Photo-electron emission and atomic force microscopies of the hydrogen etched 6H-SiC(0001) surface and the initial growth of GaN and AlN

APPLIED SURFACE SCIENCE, 242(3-4), 428–436.

Photoionization threshold of eumelanosomes determined using UV free electron laser - Photoelectron emission microscopy

Samokhvalov, A., Garguilo, J., Yang, W. C., Edwards, G. S., Nemanich, R. J., & Simon, J. D. (2004, October 21).

Polarization-dependent electron affinity of LiNbO3 surfaces

APPLIED PHYSICS LETTERS, 85(12), 2316–2318.

Preparation and characterization of atomically clean, stoichlometric surfaces of AIN(0001)

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 23(1), 72–77.

Process-dependent band structure changes of transition-metal (Ti,Zr,Hf) oxides on Si (100)

APPLIED PHYSICS LETTERS, 84(4), 580–582.

Raman spectroscopy of diamond and doped diamond

PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 362(1824), 2537–2565.

Role of thin Fe catalyst in the synthesis of double- and single-wall carbon nanotubes via microwave chemical vapor deposition

APPLIED PHYSICS LETTERS, 85(13), 2601–2603.

Shape stability of TiSi2 islands on Si (111)

JOURNAL OF APPLIED PHYSICS, 95(3), 1572–1576.

Silicide contacts for Si/Ge devices

In Silicide technology for integrated circuits.

Spectroscopic studies of metal high-k dielectrics: transition metal oxides and silicates, and complex rare earth/transition metal oxides

Lucovsky, G., Hong, J. G., Fulton, C. C., Zou, Y., Nemanich, R. J., Ade, H., … Freeouf, J. L. (2004, August). PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 241, pp. 2221–2235.

Stability and dynamics of Pt-Si liquid microdroplets on Si(001)

PHYSICAL REVIEW B, 69(4).

Three-dimensional high-resolution reconstruction of polarization in ferroelectric capacitors by piezoresponse force microscopy

JOURNAL OF APPLIED PHYSICS, 95(4), 1958–1962.

X-ray absorption spectra for transition metal high-kappa dielectrics: Final state differences for intra- and inter-atomic transitions

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 22, pp. 2132–2138.

Analysis of a nonorthogonal pattern of misfit dislocation arrays in SiGe epitaxy on high-index Si substrates

Journal of Applied Physics, 95(1), 115–122.

Attractive migration and coalescence: A significant process in the coarsening of TiSi2 islands on the Si(111) surface

PHYSICAL REVIEW LETTERS, 90(13).

Band offset measurements of the GaN (0001)/HfO2 interface

Journal of Applied Physics, 94(11), 7155–7158.

Band offset measurements of the Si3N4/GaN (0001) interface

JOURNAL OF APPLIED PHYSICS, 94(6), 3949–3954.

Characterization of hydrogen etched 6H-SiC(0001) substrates and subsequently grown AlN films

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(2), 394–400.

Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag

JOURNAL OF APPLIED PHYSICS, 94(6), 3939–3948.

Electronic structure of transition metal high-k dielectrics: interfacial band offset energies for microelectronic devices

Lucovsky, G., Raynor, G. B., Zhang, Y., Fulton, C. C., Nemanich, R. J., Appel, G., … Whitten, J. L. (2003, May 15). APPLIED SURFACE SCIENCE, Vol. 212, pp. 563–569.

Fibrous structures on diamond and carbon surfaces formed by hydrogen plasma under direct current bias and field electron-emission properties

JOURNAL OF MATERIALS RESEARCH, 18(2), 305–326.

Gold Schottky contacts on oxygen plasma-treated, n-type ZnO(000(1)over-bar)

APPLIED PHYSICS LETTERS, 82(3), 400–402.

High-pressure phase transformation of silicon nitride

APPLIED PHYSICS LETTERS, 83(23), 4740–4742.

Influence of strain, surface diffusion and Ostwald ripening on the evolution of nanostructures for erbium on Si(001)

JOURNAL OF APPLIED PHYSICS, 93(7), 4180–4184.

Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)

JOURNAL OF APPLIED PHYSICS, 93(7), 3995–4004.

Mechanical stress effect on imprint behavior of integrated ferroelectric capacitors

APPLIED PHYSICS LETTERS, 83(4), 728–730.

Photoelectron emission microscopy observation of inversion domain boundaries of GaN-based lateral polarity heterostructures

Journal of Applied Physics, 94(9), 5720–5725.

Preparation and characterization of atomically clean, stoichiometric surfaces of n- and p-type GaN(0001)

JOURNAL OF APPLIED PHYSICS, 94(5), 3163–3172.

R&D of diamond films in the Frontier Carbon Technology Project and related topics

DIAMOND AND RELATED MATERIALS, Vol. 12, pp. 233–240.

Response to "Comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' [J. Appl. Phys. 91, 732 (2002)]"

Hartlieb, P. J., Roskowski, A., Davis, R. F., Platow, W., & Nemanich, R. J. (2003, March 15). JOURNAL OF APPLIED PHYSICS, Vol. 93, pp. 3679–3679.

Spatial distribution of electron emission sites for sulfur doped and intrinsic nanocrystalline diamond films

DIAMOND AND RELATED MATERIALS, Vol. 12, pp. 474–480.

Spatial inhomogeneity of imprint and switching behavior in ferroelectric capacitors

APPLIED PHYSICS LETTERS, 82(18), 3071–3073.

Wavelength-dependent Raman scattering of hydrogenated amorphous silicon carbon with red, green, and blue light excitation

JOURNAL OF MATERIALS RESEARCH, 18(4), 768–771.

Analysis of Ti-silicide formation with a thin Ta interlayer on Si (100)

Journal of the Korean Physical Society, 40(5), 903–907.

Chemical, electrical, and structural properties of Ni/Au contacts on chemical vapor cleaned p-type GaN

JOURNAL OF APPLIED PHYSICS, 91(11), 9151–9160.

Current-voltage and imaging of TiSi2 islands on Si(001) surfaces using conductive-tip atomic force microscopy

JOURNAL OF APPLIED PHYSICS, 92(6), 3326–3331.