Neeraj Nepal

Works (9)

Updated: July 5th, 2023 15:50

2013 journal article

Multifacet semipolar formation by controlling the groove depth via lateral sidewall epitaxy

JOURNAL OF CRYSTAL GROWTH, 367, 88–93.

By: P. Frajtag n, N. Nepal n, T. Paskova n, S. Bedair n & N. El-Masry n

author keywords: Crystal structure; Metalorganic vapor phase epitaxy; InGaN; Nitrides
Source: Web Of Science
Added: August 6, 2018

2011 journal article

Embedded voids approach for low defect density in epitaxial GaN films

APPLIED PHYSICS LETTERS, 98(2).

By: P. Frajtag n, N. El-Masry n, N. Nepal n & S. Bedair n

Source: Web Of Science
Added: August 6, 2018

2011 journal article

Embedded voids formation by overgrowth on GaN nanowires for high-quality GaN films

JOURNAL OF CRYSTAL GROWTH, 322(1), 27–32.

By: P. Frajtag n, J. Samberg n, N. El-Masry n, N. Nepal n & S. Bedair n

author keywords: Nanostructures; Line defects; Volume defects; Etching; Metalorganic chemical vapor deposition; Nitrides
Source: Web Of Science
Added: August 6, 2018

2011 journal article

Enhanced magnetization in erbium doped GaN thin films due to strain induced electric fields

Applied Physics Letters, 99(12).

By: N. Woodward, N. Nepal, B. Mitchell, I. Feng, J. Li, H. Jiang, J. Lin, J. Zavada, V. Dierolf

Source: NC State University Libraries
Added: August 6, 2018

2011 article

Light emitting diodes based on sidewall m-plane epitaxy of etched GaN/sapphire templates

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, Vol. 8.

By: N. Nepal n, P. Frajtag n, J. Zavada n, N. El-Masry n, S. Bedair n, C. Wetzel, A. Khan

author keywords: GaN; sidewall epitaxy; semi-polar plane; sidewall LEDs
Source: Web Of Science
Added: August 6, 2018

2010 journal article

Electrical and magnetic properties of GaN codoped with Eu and Si

Journal of Applied Physics, 107(1).

By: R. Wang, A. Steckl, N. Nepal & J. Zavada

Source: NC State University Libraries
Added: August 6, 2018

2009 journal article

Electric field control of room temperature ferromagnetism in III-N dilute magnetic semiconductor films

APPLIED PHYSICS LETTERS, 94(13).

By: N. Nepal n, M. Luen n, J. Zavada n, S. Bedair n, P. Frajtag n & N. El-Masry n

author keywords: ferromagnetic materials; gallium compounds; Hall effect; III-V semiconductors; magnetic multilayers; magnetic thin films; magnetisation; manganese compounds; paramagnetism; p-n heterojunctions; semiconductor growth; semiconductor thin films; semimagnetic semiconductors; wide band gap semiconductors
Source: Web Of Science
Added: August 6, 2018

2009 conference paper

Ferromagnetism and near infrared luminescence in neodymium and erbium doped gallium nitride via diffusion

Novel materials and devices for spintronics, 1183, 45–50.

By: M. Luen n, N. Nepal n, P. Frajtag n, J. Zavada n, E. Brown *, U. Hommerich*, S. Bedair n, N. El Masry n

Source: NC State University Libraries
Added: August 6, 2018

2009 journal article

Optical enhancement of room temperature ferromagnetism in Er-doped GaN epilayers

Applied Physics Letters, 95(2).

By: N. Nepal, J. Zavada, R. Dahal, C. Ugolini, A. Sedhain, J. Lin, H. Jiang

Source: NC State University Libraries
Added: August 6, 2018

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