2016 journal article
Physical understanding of trends in current collapse with atomic layer deposited dielectrics in AlGaN/GaN MOS heterojunction FETs
Semiconductor Science and Technology, 31(3).
2015 journal article
ALD gate dielectrics for improved threshold voltage stability in AlGaN/GaN MOS-HFETs for power applications
Semiconductor Science and Technology, 30(12).
2015 journal article
Accurate characterization and understanding of interface trap density trends between atomic layer deposited dielectrics and AlGaN/GaN with bonding constraint theory
Applied Physics Letters, 106(24).
2015 journal article
Comparison of methods for accurate characterization of interface traps in GaN MOS-HFET devices
IEEE Transactions on Electron Devices, 62(2), 546–553.
2014 conference paper
A novel methodology using pulsed-IV for interface or border traps characterization on AlGaN/GaN MOSHFETs
Proceedings of the international symposium on power semiconductor, 366–369.
2014 journal article
Device modeling for understanding AlGaN/GaN HEMT gate-lag
IEEE Transactions on Electron Devices, 61(6), 2012–2018.
2014 journal article
Dual floating gate unified memory MOSFET with simultaneous dynamic and non-volatile operation
IEEE Electron Device Letters, 35(1), 48–50.
2014 conference paper
Flash MOS-HFET operational stability for power converter circuits
Physica status solidi c: current topics in solid state physics, vol 11, no 3-4, 11(3-4), 875–878.
2013 journal article
Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation
Semiconductor Science and Technology, 28(7).
2011 journal article
Multivalued logic using a novel multichannel GaN MOS structure
IEEE Electron Device Letters, 32(10), 1379–1381.