Narayanan Ramanan

Physical understanding of trends in current collapse with atomic layer deposited dielectrics in AlGaN/GaN MOS heterojunction FETs

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 31(3).

ALD gate dielectrics for improved threshold voltage stability in AlGaN/GaN MOS-HFETs for power applications

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30(12).

Accurate characterization and understanding of interface trap density trends between atomic layer deposited dielectrics and AlGaN/GaN with bonding constraint theory

Applied Physics Letters, 106(24), 243503.

Comparison of Methods for Accurate Characterization of Interface Traps in GaN MOS-HFET Devices

IEEE TRANSACTIONS ON ELECTRON DEVICES, 62(2), 546–553.

A novel methodology using pulsed-IV for interface or border traps characterization on AlGaN/GaN MOSHFETs

Proceedings of the international symposium on power semiconductor, 366–369.

Device Modeling for Understanding AlGaN/GaN HEMT Gate-Lag

IEEE TRANSACTIONS ON ELECTRON DEVICES, 61(6), 2012–2018.

Dual Floating Gate Unified Memory MOSFET With Simultaneous Dynamic and Non-Volatile Operation

IEEE ELECTRON DEVICE LETTERS, 35(1), 48–50.

Flash MOS-HFET operational stability for power converter circuits

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, Vol. 11, pp. 875–878.

Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28(7).

Multivalued Logic Using a Novel Multichannel GaN MOS Structure

IEEE ELECTRON DEVICE LETTERS, 32(10), 1379–1381.