Narayanan Ramanan

Physical understanding of trends in current collapse with atomic layer deposited dielectrics in AlGaN/GaN MOS heterojunction FETs

Semiconductor Science and Technology, 31(3).

ALD gate dielectrics for improved threshold voltage stability in AlGaN/GaN MOS-HFETs for power applications

Semiconductor Science and Technology, 30(12).

Accurate characterization and understanding of interface trap density trends between atomic layer deposited dielectrics and AlGaN/GaN with bonding constraint theory

Applied Physics Letters, 106(24).

Comparison of methods for accurate characterization of interface traps in GaN MOS-HFET devices

IEEE Transactions on Electron Devices, 62(2), 546–553.

A novel methodology using pulsed-IV for interface or border traps characterization on AlGaN/GaN MOSHFETs

In Proceedings of the international symposium on power semiconductor (pp. 366–369).

Device modeling for understanding AlGaN/GaN HEMT gate-lag

IEEE Transactions on Electron Devices, 61(6), 2012–2018.

Dual floating gate unified memory MOSFET with simultaneous dynamic and non-volatile operation

IEEE Electron Device Letters, 35(1), 48–50.

Flash MOS-HFET operational stability for power converter circuits

In Physica status solidi c: current topics in solid state physics, vol 11, no 3-4 (Vol. 11, pp. 875–878).

Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation

Semiconductor Science and Technology, 28(7).

Multivalued logic using a novel multichannel GaN MOS structure

IEEE Electron Device Letters, 32(10), 1379–1381.