Narayanan Ramanan

Ramanan, N., Lee, B., & Misra, V. (2016). Physical understanding of trends in current collapse with atomic layer deposited dielectrics in AlGaN/GaN MOS heterojunction FETs. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 31(3). https://doi.org/10.1088/0268-1242/31/3/035016

Ramanan, N., Lee, B., & Misra, V. (2015). ALD gate dielectrics for improved threshold voltage stability in AlGaN/GaN MOS-HFETs for power applications. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30(12). https://doi.org/10.1088/0268-1242/30/12/125017

Ramanan, N., Lee, B., & Misra, V. (2015). Accurate characterization and understanding of interface trap density trends between atomic layer deposited dielectrics and AlGaN/GaN with bonding constraint theory. Applied Physics Letters, 106(24), 243503. https://doi.org/10.1063/1.4922799

Ramanan, N., Lee, B., & Misra, V. (2015). Comparison of Methods for Accurate Characterization of Interface Traps in GaN MOS-HFET Devices. IEEE TRANSACTIONS ON ELECTRON DEVICES, 62(2), 546–553. https://doi.org/10.1109/ted.2014.2382677

Ramanan, N., Lee, B., & Misra, V. (2014). A novel methodology using pulsed-IV for interface or border traps characterization on AlGaN/GaN MOSHFETs. Proceedings of the international symposium on power semiconductor, 366–369. https://doi.org/10.1109/ispsd.2014.6856052

Ramanan, N., Lee, B., & Misra, V. (2014). Device Modeling for Understanding AlGaN/GaN HEMT Gate-Lag. IEEE TRANSACTIONS ON ELECTRON DEVICES, 61(6), 2012–2018. https://doi.org/10.1109/ted.2014.2313814

Sarkar, B., Ramanan, N., Jayanti, S., Di Spigna, N., Lee, B., Franzon, P., & Misra, V. (2014). Dual Floating Gate Unified Memory MOSFET With Simultaneous Dynamic and Non-Volatile Operation. IEEE ELECTRON DEVICE LETTERS, 35(1), 48–50. https://doi.org/10.1109/led.2013.2289751

Kirkpatrick, C., Lee, B., Ramanan, N., & Misra, V. (2014). Flash MOS-HFET operational stability for power converter circuits. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, Vol. 11, pp. 875–878. https://doi.org/10.1002/pssc.201300547

Ramanan, N., Lee, B., Kirkpatrick, C., Suri, R., & Misra, V. (2013). Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28(7). https://doi.org/10.1088/0268-1242/28/7/074004

Ramanan, N., & Misra, V. (2011). Multivalued Logic Using a Novel Multichannel GaN MOS Structure. IEEE ELECTRON DEVICE LETTERS, 32(10), 1379–1381. https://doi.org/10.1109/led.2011.2163149