Pegah Bagheri
College of Engineering
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Works (6)
2021 journal article
High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing
APPLIED PHYSICS LETTERS, 118(2).
Source: Web Of Science
Added: February 15, 2021
2021 journal article
High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN
APPLIED PHYSICS LETTERS, 118(11).
aip.scitation.org (publisher PDF)
Source: Web Of Science
Added: April 12, 2021
2021 journal article
On the Ge shallow-to-deep level transition in Al-rich AlGaN
JOURNAL OF APPLIED PHYSICS.
Source: Web Of Science
Added: September 20, 2021
2021 journal article
Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping
APPLIED PHYSICS LETTERS, 118(4).
Source: Web Of Science
Added: March 29, 2021
2021 journal article
Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies
APPLIED PHYSICS LETTERS.
Source: Web Of Science
Added: July 26, 2021
2021 journal article
Weak localization and dimensional crossover in compositionally graded AlxGa1-xN
APPLIED PHYSICS LETTERS, 118(8).
Source: Web Of Science
Added: March 29, 2021
