2023 journal article
High conductivity in Ge-doped AlN achieved by a non-equilibrium process
APPLIED PHYSICS LETTERS, 122(14).
2023 journal article
High p-conductivity in AlGaN enabled by polarization field engineering
APPLIED PHYSICS LETTERS, 122(15).
2022 journal article
Doping and compensation in heavily Mg doped Al-rich AlGaN films
APPLIED PHYSICS LETTERS, 120(8).
2022 journal article
GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions
JOURNAL OF APPLIED PHYSICS, 131(1).
2022 article
Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates
Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3.
2022 journal article
Low resistivity, p-type, N-Polar GaN achieved by chemical potential control
APPLIED PHYSICS EXPRESS, 15(8).
2022 journal article
On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).
2022 journal article
On the conduction mechanism in compositionally graded AlGaN
APPLIED PHYSICS LETTERS, 121(7).
2022 journal article
Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices
APPLIED PHYSICS EXPRESS, 15(5).
2022 journal article
Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates
Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS, 120(17).
2022 article
Tracking of Point Defects in the Full Compositional Range of AlGaN via Photoluminescence Spectroscopy
Hyun Kim, J., Bagheri, P., Kirste, R., Reddy, P., Collazo, R., & Sitar, Z. (2022, December 9). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 12.
2021 journal article
A pathway to highly conducting Ge-doped AlGaN
JOURNAL OF APPLIED PHYSICS, 130(20).
2021 journal article
High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing
APPLIED PHYSICS LETTERS, 118(2).
2021 journal article
High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN
APPLIED PHYSICS LETTERS, 118(11).
2021 journal article
On the Ge shallow-to-deep level transition in Al-rich AlGaN
JOURNAL OF APPLIED PHYSICS, 130(5).
2021 journal article
Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping
APPLIED PHYSICS LETTERS, 118(4).
2021 journal article
Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN
APPLIED PHYSICS LETTERS, 119(18).
2021 journal article
Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies
APPLIED PHYSICS LETTERS, 119(2).
2021 journal article
Weak localization and dimensional crossover in compositionally graded AlxGa1-xN
APPLIED PHYSICS LETTERS, 118(8).