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2021 journal article
High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing
APPLIED PHYSICS LETTERS, 118(2).
2021 journal article
High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN
APPLIED PHYSICS LETTERS, 118(11).
2021 journal article
Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping
APPLIED PHYSICS LETTERS, 118(4).
2021 journal article
Weak localization and dimensional crossover in compositionally graded AlxGa1-xN
APPLIED PHYSICS LETTERS, 118(8).