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2021 journal article
High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing
APPLIED PHYSICS LETTERS, 118(2).
By: M. Breckenridge, J. Tweedie, P. Reddy, Y. Guan, P. Bagheri, D. Szymanski, S. Mita, K. Sierakowski ...and 3 other authors, including 2 NC State authors, M. Bockowski, R. Collazo & Z. Sitar
High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN
APPLIED PHYSICS LETTERS, 118(11).
By: M. Breckenridge, P. Bagheri, Q. Guo, B. Sarkar, D. Khachariya, S. Pavlidis, J. Tweedie, R. Kirste ...and 4 other NC State authors, S. Mita, P. Reddy, R. Collazo & Z. Sitar
On the Ge shallow-to-deep level transition in Al-rich AlGaN
JOURNAL OF APPLIED PHYSICS.
By: P. Bagheri, P. Reddy, S. Mita, D. Szymanski, J. Kim, Y. Guan, D. Khachariya, A. Klump ...and 4 other NC State authors, S. Pavlidis, R. Kirste, R. Collazo & Z. Sitar
Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping
APPLIED PHYSICS LETTERS, 118(4).
By: S. Washiyama, K. Mirrielees, P. Bagheri, J. Baker, J. Kim, Q. Guo, R. Kirste, Y. Guan ...and 7 other authors, including 6 NC State authors, M. Breckenridge, A. Klump, P. Reddy, S. Mita, D. Irving, R. Collazo, Z. Sitar
Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies
APPLIED PHYSICS LETTERS.
By: J. Kim, P. Bagheri, S. Washiyama, A. Klump, R. Kirste, S. Mita, P. Reddy, R. Collazo, Z. Sitar
Weak localization and dimensional crossover in compositionally graded AlxGa1-xN
APPLIED PHYSICS LETTERS, 118(8).
By: A. Al-Tawhid, A. Shafe, P. Bagheri, Y. Guan, P. Reddy, S. Mita, B. Moody, R. Collazo, Z. Sitar, K. Ahadi
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