Pegah Bagheri

College of Engineering

Works (17)

2022 journal article

Doping and compensation in heavily Mg doped Al-rich AlGaN films

APPLIED PHYSICS LETTERS, 120(8).

Sources: Web Of Science, ORCID
Added: June 20, 2022

2022 journal article

GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions

JOURNAL OF APPLIED PHYSICS, 131(1).

By: D. Szymanski, D. Khachariya, T. Eldred, P. Bagheri, S. Washiyama, A. Chang*, S. Pavlidis, R. Kirste ...

Sources: Web Of Science, ORCID
Added: January 4, 2022

2022 article

Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3.

By: P. Reddy, W. Mecouch, M. Breckenridge n, D. Khachariya, P. Bagheri, J. Kim, Y. Guan, S. Mita ...

Sources: Web Of Science, ORCID
Added: March 11, 2022

2022 journal article

Low resistivity, p-type, N-Polar GaN achieved by chemical potential control

APPLIED PHYSICS EXPRESS, 15(8).

By: S. Rathkanthiwar, D. Szymanski, D. Khachariya, P. Bagheri, J. Kim, S. Mita, P. Reddy, E. Kohn ...

Sources: Web Of Science, ORCID
Added: August 8, 2022

2022 journal article

On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).

By: A. Jadhav, P. Bagheri, A. Klump, D. Khachariya, S. Mita, P. Reddy, S. Rathkanthiwar, R. Kirste ...

Sources: Web Of Science, ORCID
Added: November 6, 2021

2022 journal article

On the conduction mechanism in compositionally graded AlGaN

APPLIED PHYSICS LETTERS, 121(7).

By: S. Rathkanthiwar, P. Bagheri, D. Khachariya*, J. Kim n, Y. Kajikawa*, P. Reddy*, S. Mita*, R. Kirste* ...

Sources: Web Of Science, ORCID
Added: August 29, 2022

2022 journal article

Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices

APPLIED PHYSICS EXPRESS, 15(5).

Sources: Web Of Science, ORCID
Added: April 25, 2022

2022 journal article

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS, 120(17).

By: D. Khachariya, S. Mita, P. Reddy, S. Dangi, J. Dycus*, P. Bagheri, M. Breckenridge n, R. Sengupta ...

Sources: Web Of Science, ORCID
Added: May 31, 2022

2022 article

Tracking of Point Defects in the Full Compositional Range of AlGaN via Photoluminescence Spectroscopy

Hyun Kim, J., Bagheri, P., Kirste, R., Reddy, P., Collazo, R., & Sitar, Z. (2022, December 9). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 12.

By: J. Hyun Kim n, P. Bagheri, R. Kirste, P. Reddy, R. Collazo & Z. Sitar

Sources: Web Of Science, ORCID
Added: December 10, 2022

2021 journal article

A pathway to highly conducting Ge-doped AlGaN

JOURNAL OF APPLIED PHYSICS, 130(20).

Sources: Web Of Science, ORCID
Added: November 23, 2021

2021 journal article

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

APPLIED PHYSICS LETTERS, 118(2), 022101.

By: M. Breckenridge n, J. Tweedie, P. Reddy, Y. Guan, P. Bagheri, D. Szymanski, S. Mita, K. Sierakowski* ...

Sources: Web Of Science, ORCID
Added: January 14, 2021

2021 journal article

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

APPLIED PHYSICS LETTERS, 118(11).

By: M. Breckenridge n, P. Bagheri, Q. Guo, B. Sarkar, D. Khachariya, S. Pavlidis, J. Tweedie, R. Kirste ...

Sources: Web Of Science, ORCID
Added: March 17, 2021

2021 journal article

On the Ge shallow-to-deep level transition in Al-rich AlGaN

JOURNAL OF APPLIED PHYSICS, 130(5).

By: P. Bagheri, P. Reddy, S. Mita, D. Szymanski, J. Kim, Y. Guan, D. Khachariya, A. Klump ...

Sources: Web Of Science, ORCID
Added: August 4, 2021

2021 journal article

Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

APPLIED PHYSICS LETTERS, 118(4).

By: S. Washiyama, K. Mirrielees, P. Bagheri, J. Baker, J. Kim, Q. Guo, R. Kirste, Y. Guan ...

Sources: Web Of Science, ORCID
Added: March 29, 2021

2021 journal article

Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN

APPLIED PHYSICS LETTERS, 119(18).

By: P. Reddy, D. Khachariya, W. Mecouch*, M. Breckenridge n, P. Bagheri, Y. Guan, J. Kim, S. Pavlidis ...

Sources: Web Of Science, ORCID
Added: November 3, 2021

2021 journal article

Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies

APPLIED PHYSICS LETTERS, 119(2).

Sources: Web Of Science, ORCID
Added: July 26, 2021

2021 journal article

Weak localization and dimensional crossover in compositionally graded AlxGa1-xN

APPLIED PHYSICS LETTERS, 118(8), 082101.

Sources: Web Of Science, ORCID
Added: February 25, 2021