Pegah Bagheri

College of Engineering

Works (21)

Updated: January 22nd, 2024 08:12

2023 journal article

Anderson transition in compositionally graded p-AlGaN

JOURNAL OF APPLIED PHYSICS, 134(19).

By: S. Rathkanthiwar n, P. Reddy*, C. Quinones n, J. Loveless n, M. Kamiyama n, P. Bagheri n, D. Khachariya*, T. Eldred n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: November 16, 2023

2023 journal article

Demonstration of near-ideal Schottky contacts to Si-doped AlN

APPLIED PHYSICS LETTERS, 123(17).

By: C. Quinones n, D. Khachariya*, P. Bagheri n, P. Reddy*, S. Mita*, R. Kirste*, S. Rathkanthiwar n, J. Tweedie* ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: October 25, 2023

2023 journal article

High conductivity in Ge-doped AlN achieved by a non-equilibrium process

APPLIED PHYSICS LETTERS, 122(14).

By: P. Bagheri n, C. Quinones-Garcia n, D. Khachariya*, J. Loveless n, Y. Guan n, S. Rathkanthiwar n, P. Reddy*, R. Kirste* ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: April 6, 2023

2023 journal article

High p-conductivity in AlGaN enabled by polarization field engineering

APPLIED PHYSICS LETTERS, 122(15).

By: S. Rathkanthiwar n, P. Reddy*, B. Moody*, C. Quinones-Garcia n, P. Bagheri n, D. Khachariya*, R. Dalmau*, S. Mita* ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: April 19, 2023

2022 journal article

Doping and compensation in heavily Mg doped Al-rich AlGaN films

APPLIED PHYSICS LETTERS, 120(8).

By: P. Bagheri n, A. Klump n, S. Washiyama n, M. Breckenridge n, J. Kim n, Y. Guan n, D. Khachariya n, C. Quinones-Garcia n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: June 20, 2022

2022 journal article

GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions

JOURNAL OF APPLIED PHYSICS, 131(1).

By: D. Szymanski n, D. Khachariya n, T. Eldred n, P. Bagheri n, S. Washiyama n, A. Chang*, S. Pavlidis n, R. Kirste* ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: January 4, 2022

2022 article

Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3.

By: P. Reddy*, W. Mecouch*, M. Breckenridge n, D. Khachariya n, P. Bagheri n, J. Kim n, Y. Guan n, S. Mita* ...

co-author countries: United States of America 🇺🇸
author keywords: AlGaN; APD; UVC
Sources: Web Of Science, ORCID
Added: March 11, 2022

2022 journal article

Low resistivity, p-type, N-Polar GaN achieved by chemical potential control

APPLIED PHYSICS EXPRESS, 15(8).

By: S. Rathkanthiwar n, D. Szymanski n, D. Khachariya n, P. Bagheri n, J. Kim n, S. Mita*, P. Reddy*, E. Kohn n ...

co-author countries: United States of America 🇺🇸
author keywords: N-polar GaN; p doping; compensation; chemical potential control
Sources: Web Of Science, ORCID
Added: August 8, 2022

2022 journal article

On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).

By: A. Jadhav*, P. Bagheri n, A. Klump n, D. Khachariya n, S. Mita*, P. Reddy*, S. Rathkanthiwar n, R. Kirste* ...

co-author countries: India 🇮🇳 United States of America 🇺🇸
author keywords: III-nitride; Mg-doped AlGaN; ionization energy; mobility; contact resistance
Sources: Web Of Science, ORCID
Added: November 6, 2021

2022 journal article

On the conduction mechanism in compositionally graded AlGaN

APPLIED PHYSICS LETTERS, 121(7).

By: S. Rathkanthiwar n, P. Bagheri n, D. Khachariya*, J. Kim n, Y. Kajikawa*, P. Reddy*, S. Mita*, R. Kirste* ...

co-author countries: Japan 🇯🇵 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 29, 2022

2022 journal article

Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices

APPLIED PHYSICS EXPRESS, 15(5).

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: April 25, 2022

2022 journal article

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS, 120(17).

By: D. Khachariya n, S. Mita*, P. Reddy*, S. Dangi n, J. Dycus*, P. Bagheri n, M. Breckenridge n, R. Sengupta n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: May 31, 2022

2022 article

Tracking of Point Defects in the Full Compositional Range of AlGaN via Photoluminescence Spectroscopy

Hyun Kim, J., Bagheri, P., Kirste, R., Reddy, P., Collazo, R., & Sitar, Z. (2022, December 9). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 12.

By: J. Hyun Kim n, P. Bagheri n, R. Kirste*, P. Reddy*, R. Collazo n & Z. Sitar n

co-author countries: United States of America 🇺🇸
author keywords: AlGaN; AlN; defects; GaN; photoluminescence
Sources: Web Of Science, ORCID
Added: December 10, 2022

2021 journal article

A pathway to highly conducting Ge-doped AlGaN

JOURNAL OF APPLIED PHYSICS, 130(20).

By: P. Bagheri n, J. Kim n, S. Washiyama n, P. Reddy*, A. Klump n, R. Kirste*, S. Mita*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: November 23, 2021

2021 journal article

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

APPLIED PHYSICS LETTERS, 118(2).

By: M. Breckenridge n, J. Tweedie*, P. Reddy*, Y. Guan n, P. Bagheri n, D. Szymanski n, S. Mita*, K. Sierakowski* ...

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: January 14, 2021

2021 journal article

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

APPLIED PHYSICS LETTERS, 118(11).

By: M. Breckenridge n, P. Bagheri n, Q. Guo n, B. Sarkar n, D. Khachariya n, S. Pavlidis n, J. Tweedie*, R. Kirste* ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: March 17, 2021

2021 journal article

On the Ge shallow-to-deep level transition in Al-rich AlGaN

JOURNAL OF APPLIED PHYSICS, 130(5).

By: P. Bagheri n, P. Reddy*, S. Mita*, D. Szymanski n, J. Kim n, Y. Guan n, D. Khachariya n, A. Klump n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 4, 2021

2021 journal article

Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

APPLIED PHYSICS LETTERS, 118(4).

By: S. Washiyama n, K. Mirrielees n, P. Bagheri n, J. Baker n, J. Kim n, Q. Guo n, R. Kirste*, Y. Guan n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: March 29, 2021

2021 journal article

Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN

APPLIED PHYSICS LETTERS, 119(18).

By: P. Reddy*, D. Khachariya n, W. Mecouch*, M. Breckenridge n, P. Bagheri n, Y. Guan n, J. Kim n, S. Pavlidis n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: November 3, 2021

2021 journal article

Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies

APPLIED PHYSICS LETTERS, 119(2).

By: J. Kim n, P. Bagheri n, S. Washiyama n, A. Klump n, R. Kirste*, S. Mita*, P. Reddy*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: July 26, 2021

2021 journal article

Weak localization and dimensional crossover in compositionally graded AlxGa1-xN

APPLIED PHYSICS LETTERS, 118(8).

By: A. Al-Tawhid n, A. Shafe n, P. Bagheri n, Y. Guan n, P. Reddy*, S. Mita*, B. Moody*, R. Collazo n, Z. Sitar n, K. Ahadi n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: February 25, 2021

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