Pegah Bagheri

Doping and compensation in heavily Mg doped Al-rich AlGaN films

APPLIED PHYSICS LETTERS.

GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions

JOURNAL OF APPLIED PHYSICS.

Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS.

Low resistivity, p-type, N-Polar GaN achieved by chemical potential control

APPLIED PHYSICS EXPRESS.

On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters

SEMICONDUCTOR SCIENCE AND TECHNOLOGY.

On the conduction mechanism in compositionally graded AlGaN

APPLIED PHYSICS LETTERS.

Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices

APPLIED PHYSICS EXPRESS.

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS.

A pathway to highly conducting Ge-doped AlGaN

JOURNAL OF APPLIED PHYSICS.

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

APPLIED PHYSICS LETTERS, 118(2).

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

APPLIED PHYSICS LETTERS, 118(11).

On the Ge shallow-to-deep level transition in Al-rich AlGaN

JOURNAL OF APPLIED PHYSICS.

Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

APPLIED PHYSICS LETTERS, 118(4).

Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN

APPLIED PHYSICS LETTERS.

Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies

APPLIED PHYSICS LETTERS.

Weak localization and dimensional crossover in compositionally graded AlxGa1-xN

APPLIED PHYSICS LETTERS, 118(8).