Piotr Boguslawski

Works (7)

Updated: July 5th, 2023 16:03

2012 journal article

Theory of nitrogen doping of carbon nanoribbons: Edge effects

Journal of Chemical Physics, 136(1).

By: J. Jiang, J. Turnbull, W. Lu, P. Boguslawski & J. Bernholc 

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Comment on "Mn interstitial diffusion in (Ga,Mn)As'' - Reply

Physical Review Letters, 94(13).

By: K. Edmonds, P. Boguslawski, K. Wang, R. Campion, S. Novikov, N. Farley, B. Gallagher, C. Foxon ...

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Mn Interstitial Diffusion in(Ga,Mn)As

Physical Review Letters, 92(3).

By: K. Edmonds *, P. Bogusławski n, K. Wang *, R. Campion *, S. Novikov *, N. Farley*, B. Gallagher *, C. Foxon* ...

topics (OpenAlex): ZnO doping and properties; Copper-based nanomaterials and applications; Electronic and Structural Properties of Oxides
TL;DR: A combined theoretical and experimental study of the ferromagnetic semiconductor (Ga,Mn)As reveals that electric fields induced by Mn acceptors have a significant effect on the diffusion of Mn interstitials towards the surface. (via Semantic Scholar)
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, Crossref, NC State University Libraries
Added: August 6, 2018

2002 article

Surface Segregation of Ge at SiGe(001) by Concerted Exchange Pathways

Bogusławski, P., & Bernholc, J. (2002, April 5). Physical Review Letters, Vol. 88, pp. 166101–166101.

By: P. Bogusławski n & J. Bernholc n 

topics (OpenAlex): Semiconductor Quantum Structures and Devices; Semiconductor materials and interfaces; Semiconductor materials and devices
TL;DR: The segregation of Ge during growth on SiGe(001) surfaces was investigated by ab initio calculations and revealed four processes involving adatoms rather than ad-dimers, which explain well the high-temperature experimental data. (via Semantic Scholar)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2000 article

Surface segregation and interface stability of AlN/GaN, GaN/InN, and AlN/InN {0001} epitaxial systems

Bogusławski, P., Rapcewicz, K., & Bernholc, J. J. (2000, April 15). Physical Review. B, Condensed Matter, Vol. 61, pp. 10820–10826.

By: P. Bogusławski n, K. Rapcewicz n & J. Bernholc n 

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

1999 article

Segregation effects at vacancies inAlxGa1−xNandSixGe1−xalloys

Bogusławski, P., & Bernholc, J. (1999, January 15). Physical Review. B, Condensed Matter, Vol. 59, pp. 1567–1570.

By: P. Bogusławski n & J. Bernholc n 

topics (OpenAlex): Semiconductor materials and interfaces; Semiconductor Quantum Structures and Devices; Ion-surface interactions and analysis
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

1995 article

Native defects in gallium nitride

Bogusl/awski, P., Briggs, E. L., & Bernholc, J. (1995, June 15). Physical Review. B, Condensed Matter, Vol. 51, pp. 17255–17258.

By: P. Bogusl/awski n, E. Briggs n & J. Bernholc n 

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

Citation Index includes data from a number of different sources. If you have questions about the sources of data in the Citation Index or need a set of data which is free to re-distribute, please contact us.

Certain data included herein are derived from the Web of Science© and InCites© (2026) of Clarivate Analytics. All rights reserved. You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.