Peter C. Colter

Ohmic co-doped GaN/InGaN tunneling diode grown by MOCVD

APPLIED PHYSICS LETTERS, 121(5).

P-type InxGa1-xN semibulk templates (0.02 < x < 0.16) with room temperature hole concentration of mid-10(19) cm(-3) and device quality surface morphology

P-type InxGa1-xN semibulk templates (0.02 < x < 0.16) with room temperature hole concentration of mid-10(19) cm(-3) and device quality surface morphology. APPLIED PHYSICS LETTERS, 119(12).

Multi-junction solar cells by Intermetallic Bonding and interconnect of Dissimilar Materials: GaAs/Si

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 215.

Tunnel Junctions for III-V Multijunction Solar Cells Review

[Review of ]. CRYSTALS, 8(12).

In-situ curvature monitoring and X-ray diffraction study of InGaAsP/InGaP quantum wells

JOURNAL OF CRYSTAL GROWTH, 475, 171–177.

Annealed high band gap tunnel junctions with peak current densities above 800 A/cm(2)

2016 ieee 43rd photovoltaic specialists conference (pvsc), 2320–2322.

Extending the absorption threshold of InGaP solar cells to 1.60 eV using quantum wells: experimental and modeling results

2016 ieee 43rd photovoltaic specialists conference (pvsc), 2366–2370.

High Performance Tunnel Junction with Resistance to Thermal Annealing

12TH INTERNATIONAL CONFERENCE ON CONCENTRATOR PHOTOVOLTAIC SYSTEMS (CPV-12), Vol. 1766.

High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface

APPLIED PHYSICS LETTERS, 108(20).

InGaP-based quantum well solar cells

2016 ieee 43rd photovoltaic specialists conference (pvsc), 147–150.

InGaP-based quantum well solar cells: Growth, structural design, and photovoltaic properties

JOURNAL OF APPLIED PHYSICS, 119(9).

Strain-Balanced InGaAsP/GaInP Multiple Quantum Well Solar Cells With a Tunable Bandgap (1.65-1.82 eV)

IEEE JOURNAL OF PHOTOVOLTAICS, 6(4), 997–1003.

Tunable GaInP solar cell lattice matched to GaAs

2015 ieee 42nd photovoltaic specialist conference (pvsc).

GaInP/GaAs Tandem Solar Cells With InGaAs/GaAsP Multiple Quantum Wells

IEEE JOURNAL OF PHOTOVOLTAICS, 4(2), 614–619.

Carrier Transport and Improved Collection in Thin-Barrier InGaAs/GaAsP Strained Quantum Well Solar Cells

IEEE JOURNAL OF PHOTOVOLTAICS, 3(1), 278–283.

Determination of carrier recombination lifetime in InGaAs quantum wells from external quantum efficiency measurements

2013 ieee 39th photovoltaic specialists conference (pvsc), 264–267.

Effect of GaAs interfacial layer on the performance of high bandgap tunnel junctions for multijunction solar cells

APPLIED PHYSICS LETTERS, 103(10).

Growth and Characterization of InxGa1-xAs/GaAs1-yPy Strained-Layer Superlattices with High Values of y (similar to 80%)

JOURNAL OF ELECTRONIC MATERIALS, 42(5), 912–917.

Interface properties of Ga(As,P)/(In,Ga)As strained multiple quantum well structures

APPLIED PHYSICS LETTERS, 103(7).

Minority Carrier Transport and Their Lifetime in InGaAs/GaAsP Multiple Quantum Well Structures

IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(8), 2532–2536.

Modeling an InGaP/AlGaAs tunnel junction containing an AlAs diffusion barrier

2013 ieee 39th photovoltaic specialists conference (pvsc), 2082–2085.

Tandem InGaP/GaAs-quantum well solar cells and their potential improvement through phosphorus carry-over management in multiple quantum well structures

2013 ieee 39th photovoltaic specialists conference (pvsc), 1737–1740.

Overgrowth of GaN on GaN nanowires produced by mask-less etching

Frajtag, P., Hosalli, A. M., Samberg, J. P., Colter, P. C., Paskova, T., El-Masry, N. A., & Bedair, S. M. (2012, August 1). JOURNAL OF CRYSTAL GROWTH, Vol. 352, pp. 203–208.

Staggered InGaAs/GaAsP strained layer superlattices for use in optical devices

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 208(12), 2884–2888.

Characteristics of low-temperature-grown GaN films on Si(111)

Solid State Communications, 133(5), 283–287.

High-efficiency metamorphic GaInP/GaInAs/Ge solar cells grown by MOVPE

Journal of Crystal Growth, 261(2-3), 341–348.