Works (26)

Updated: April 11th, 2023 10:13

2022 journal article

Ohmic co-doped GaN/InGaN tunneling diode grown by MOCVD

APPLIED PHYSICS LETTERS, 121(5).

By: B. Hagar, M. Abdelhamid, E. Routh, P. Colter & S. Bedair

Sources: Web Of Science, ORCID
Added: August 6, 2022

2021 journal article

P-type InxGa1-xN semibulk templates (0.02 < x < 0.16) with room temperature hole concentration of mid-10(19) cm(-3) and device quality surface morphology

P-type InxGa1-xN semibulk templates (0.02 < x < 0.16) with room temperature hole concentration of mid-10(19) cm(-3) and device quality surface morphology. APPLIED PHYSICS LETTERS, 119(12).

Sources: Web Of Science, ORCID
Added: February 21, 2022

2020 journal article

Multi-junction solar cells by Intermetallic Bonding and interconnect of Dissimilar Materials: GaAs/Si

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 215.

By: B. Hagar, I. Sayed, P. Colter & S. Bedair

author keywords: Solar cells; Intermetallic bonding; Wafer bonding technology; Mechanical stacking
Source: Web Of Science
Added: October 26, 2020

2018 review

Tunnel Junctions for III-V Multijunction Solar Cells Review

[Review of ]. CRYSTALS, 8(12).

By: P. Colter, B. Hagar & S. Bedair

author keywords: tunnel junction; solar cell; efficiency
Source: Web Of Science
Added: January 21, 2019

2017 journal article

In-situ curvature monitoring and X-ray diffraction study of InGaAsP/InGaP quantum wells

JOURNAL OF CRYSTAL GROWTH, 475, 171–177.

By: I. Sayed, N. Jain*, M. Steiner*, J. Geisz*, P. Dippo*, D. Kuciauskas*, P. Colter

author keywords: Metalorganic chemical vapor deposition; Quantum wells; Semiconducting III-V materials; Semiconducting gallium arsenide; Semiconducting indium gallium phosphide; Solar cells
Source: Web Of Science
Added: August 6, 2018

2016 conference paper

Annealed high band gap tunnel junctions with peak current densities above 800 A/cm(2)

2016 ieee 43rd photovoltaic specialists conference (pvsc), 2320–2322.

By: S. Bedair, J. Harmon, C. Carlin, I. Sayed n & P. Colter

Source: NC State University Libraries
Added: August 6, 2018

2016 conference paper

Extending the absorption threshold of InGaP solar cells to 1.60 eV using quantum wells: experimental and modeling results

2016 ieee 43rd photovoltaic specialists conference (pvsc), 2366–2370.

By: I. Sayed n, B. Hagar, C. Carlin, P. Colter & S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

2016 article

High Performance Tunnel Junction with Resistance to Thermal Annealing

12TH INTERNATIONAL CONFERENCE ON CONCENTRATOR PHOTOVOLTAIC SYSTEMS (CPV-12), Vol. 1766.

By: S. Bedair, C. Carlin, J. Harmon, I. Sayed & P. Colter

Source: Web Of Science
Added: August 6, 2018

2016 journal article

High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface

APPLIED PHYSICS LETTERS, 108(20).

By: S. Bedair, J. Harmon, C. Carlin n, I. Sayed & P. Colter

Source: Web Of Science
Added: August 6, 2018

2016 conference paper

InGaP-based quantum well solar cells

2016 ieee 43rd photovoltaic specialists conference (pvsc), 147–150.

By: I. Sayed n, B. Hagar, C. Carlin, P. Colter & S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

2016 journal article

InGaP-based quantum well solar cells: Growth, structural design, and photovoltaic properties

JOURNAL OF APPLIED PHYSICS, 119(9).

By: I. Hashem n, C. Carlin n, B. Hagar, P. Colter & S. Bedair

Source: Web Of Science
Added: August 6, 2018

2016 journal article

Strain-Balanced InGaAsP/GaInP Multiple Quantum Well Solar Cells With a Tunable Bandgap (1.65-1.82 eV)

IEEE JOURNAL OF PHOTOVOLTAICS, 6(4), 997–1003.

By: I. Sayed, C. Carlin, B. Hagar, P. Colter & S. Bedair

author keywords: GaAs; GaInP; multijunction solar cells (MJSCs); quantum wells (QWs); III-V semiconductors
Source: Web Of Science
Added: August 6, 2018

2015 conference paper

Tunable GaInP solar cell lattice matched to GaAs

2015 ieee 42nd photovoltaic specialist conference (pvsc).

Source: NC State University Libraries
Added: August 6, 2018

2014 journal article

GaInP/GaAs Tandem Solar Cells With InGaAs/GaAsP Multiple Quantum Wells

IEEE JOURNAL OF PHOTOVOLTAICS, 4(2), 614–619.

By: G. Bradshaw, J. Samberg, C. Carlin n, P. Colter, K. Edmondson*, W. Hong*, C. Fetzer*, N. Karam*, S. Bedair

author keywords: InGaAs/GaAsP multiple quantum wells; multijunction solar cell; tunneling; III-V tandem solar cells
Source: Web Of Science
Added: August 6, 2018

2013 journal article

Carrier Transport and Improved Collection in Thin-Barrier InGaAs/GaAsP Strained Quantum Well Solar Cells

IEEE JOURNAL OF PHOTOVOLTAICS, 3(1), 278–283.

By: G. Bradshaw, C. Carlin n, J. Samberg, N. El-Masry, P. Colter & S. Bedair

author keywords: III-V multijunction solar cells; multiple quantum wells; thermionic emission; tunneling
Source: Web Of Science
Added: August 6, 2018

2013 conference paper

Determination of carrier recombination lifetime in InGaAs quantum wells from external quantum efficiency measurements

2013 ieee 39th photovoltaic specialists conference (pvsc), 264–267.

Source: NC State University Libraries
Added: August 6, 2018

2013 journal article

Effect of GaAs interfacial layer on the performance of high bandgap tunnel junctions for multijunction solar cells

APPLIED PHYSICS LETTERS, 103(10).

By: J. Samberg, C. Carlin, G. Bradshaw, P. Colter, J. Harmon, J. Allen, J. Hauser, S. Bedair

Source: Web Of Science
Added: August 6, 2018

2013 journal article

Growth and Characterization of InxGa1-xAs/GaAs1-yPy Strained-Layer Superlattices with High Values of y (similar to 80%)

JOURNAL OF ELECTRONIC MATERIALS, 42(5), 912–917.

author keywords: Superlattice; strain-balanced; tunneling; InGaAs; GaAsP; photovoltaic
Source: Web Of Science
Added: August 6, 2018

2013 journal article

Interface properties of Ga(As,P)/(In,Ga)As strained multiple quantum well structures

APPLIED PHYSICS LETTERS, 103(7).

By: J. Samberg, H. Alipour, G. Bradshaw, C. Carlin, P. Colter, J. LeBeau, N. El-Masry, S. Bedair

Source: Web Of Science
Added: August 6, 2018

2013 journal article

Minority Carrier Transport and Their Lifetime in InGaAs/GaAsP Multiple Quantum Well Structures

IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(8), 2532–2536.

author keywords: Indium Gallium Arsenide; quantum wells; tunneling
Source: Web Of Science
Added: August 6, 2018

2013 conference paper

Modeling an InGaP/AlGaAs tunnel junction containing an AlAs diffusion barrier

2013 ieee 39th photovoltaic specialists conference (pvsc), 2082–2085.

By: J. Hauser, Z. Carlin n, J. Harmon, G. Bradshaw, J. Samberg, P. Colter, S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

2013 conference paper

Tandem InGaP/GaAs-quantum well solar cells and their potential improvement through phosphorus carry-over management in multiple quantum well structures

2013 ieee 39th photovoltaic specialists conference (pvsc), 1737–1740.

By: J. Samberg, G. Bradshaw, C. Carlin, P. Colter, K. Edmondson*, W. Hong*, C. Fetzer*, N. Karam*, N. El-Masry, S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

2012 article

Overgrowth of GaN on GaN nanowires produced by mask-less etching

Frajtag, P., Hosalli, A. M., Samberg, J. P., Colter, P. C., Paskova, T., El-Masry, N. A., & Bedair, S. M. (2012, August 1). JOURNAL OF CRYSTAL GROWTH, Vol. 352, pp. 203–208.

By: P. Frajtag, A. Hosalli n, J. Samberg, P. Colter, T. Paskova, N. El-Masry, S. Bedair

author keywords: Defects; Etching; GaN nanowires; X-ray diffraction; Lateral overgrowth; Nitrides
Source: Web Of Science
Added: August 6, 2018

2011 journal article

Staggered InGaAs/GaAsP strained layer superlattices for use in optical devices

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 208(12), 2884–2888.

author keywords: quantum size effects; strain balanced superlattices; tunneling
Source: Web Of Science
Added: August 6, 2018

2005 journal article

Characteristics of low-temperature-grown GaN films on Si(111)

Solid State Communications, 133(5), 283–287.

By: Z. Hassan*, Y. Lee*, F. Yam*, K. Ibrahim*, M. Kordesch*, W. Halverson*, P. Colter

author keywords: semiconductors; crystal growth; X-ray diffraction; electrical properties
Source: Crossref
Added: June 6, 2020

2004 journal article

High-efficiency metamorphic GaInP/GaInAs/Ge solar cells grown by MOVPE

Journal of Crystal Growth, 261(2-3), 341–348.

By: C. Fetzer*, R. King*, P. Colter, K. Edmondson*, D. Law*, A. Stavrides*, H. Yoon*, J. Ermer*, M. Romero*, N. Karam*

author keywords: metamorphic; metalorganic vapor phase epitaxy; GaInAs; GaInP; germanium; solar cells
Source: Crossref
Added: June 6, 2020