Punam Pant

Works (11)

Updated: July 5th, 2023 15:54

2018 journal article

Diamond film growth by HFCVD on Q-carbon seeded substrate

CARBON, 141, 182–189.

By: R. Sachan n, A. Bhaumik n, P. Pant n, J. Prater n & J. Narayan n 

author keywords: Q-carbon; Hot filament chemical vapor deposition; Diamond film; Transmission electron microscopy; Raman spectroscopy
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Sources: Web Of Science, NC State University Libraries
Added: December 10, 2018

2018 journal article

Large-area diamond thin film on Q-carbon coated crystalline sapphire by HFCVD

JOURNAL OF CRYSTAL GROWTH, 504, 17–25.

By: A. Haque n, P. Pant n & J. Narayan n 

author keywords: Stresses; Diamond; Sapphire; Chemical vapor deposition
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Sources: Web Of Science, NC State University Libraries
Added: November 12, 2018

2018 journal article

Undercooling driven growth of Q-carbon, diamond, and graphite

MRS COMMUNICATIONS, 8(2), 533–540.

By: S. Gupta n , R. Sachan*, A. Bhaumik n, P. Pant n & J. Narayan n 

Contributors: S. Gupta n , R. Sachan*, A. Bhaumik n, P. Pant n & J. Narayan n 

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Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018

2010 journal article

Atomic structure of misfit dislocations in nonpolar ZnO/Al2O3 heterostructures

Applied Physics Letters, 97(12).

By: H. Zhou, M. Chisholm, P. Pant, H. Chang, J. Gazquez, S. Pennycook, J. Narayan 

Source: NC State University Libraries
Added: August 6, 2018

2009 journal article

Magnetic properties and their dependence on deposition parameters of Co/Al2O3 multilayers grown by pulsed laser deposition

ACTA MATERIALIA, 57(6), 2040–2046.

By: R. Aggarwal n, S. Nori n, C. Jin*, P. Pant n, G. Trichy n, D. Kumar*, J. Narayan n , R. Narayan*

author keywords: Magnetic properties; Multilayered materials; Thin films; Pulsed laser deposition
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Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2009 journal article

Nonpolar ZnO film growth and mechanism for anisotropic in-plane strain relaxation

ACTA MATERIALIA, 58(3), 1097–1103.

By: P. Pant n, J. Budai * & J. Narayan n 

author keywords: Epitaxy; Nonpolar; Anisotropic strain; X-ray; TEM
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2009 journal article

Thin film epitaxy and structure property correlations for non-polar ZnO films

ACTA MATERIALIA, 57(15), 4426–4431.

By: P. Pant n, J. Budai *, R. Aggarwal n, R. Narayan n & J. Narayan n 

author keywords: Diffraction; Pulsed laser deposition; Strain; ZnO non-polar oxide thin film; TEM
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2008 journal article

Comparative Raman and HRTEM Study of Nanostructured GaN Nucleation Layers and Device Layers on Sapphire (0001)

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 8(11), 5985–5992.

By: P. Pant, J. Narayan , A. Wushuer & M. Manghnani

author keywords: GaN; Nucleation Layer; Raman Spectroscopy; Stress
TL;DR: The peak shift of the E2(H)(LO) mode of h-GaN in the NLs and the h- GaiaN film suggests the presence of a tensile stress in theNL which is attributed to defects such as stacking faults and twins, and a compressive stress in high-temperature grown h- GaN film which is attribut to the thermal-expansion mismatch between the film and the substrate. (via Semantic Scholar)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2008 journal article

Growth of biepitaxial zinc oxide thin films on silicon (100) using yttria-stabilized zirconia buffer layer

Applied Physics Letters, 93(25), 251905.

By: R. Aggarwal n, C. Jin*, P. Pant n, J. Narayan n  & R. Narayan n

author keywords: electron diffraction; II-VI semiconductors; photoluminescence; point defects; pulsed laser deposition; semiconductor epitaxial layers; transmission electron microscopy; wide band gap semiconductors; X-ray diffraction; yttrium compounds; zinc compounds; zirconium compounds
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2007 journal article

Nanostructured GaN nucleation layer for light-emitting diodes

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 7(8), 2719–2725.

By: J. Narayan n , P. Pant*, W. Wei*, R. Narayan* & J. Budai

author keywords: gallium nitride; nanostructured nucleation layer; light emitting diodes (LEDs); domain matching epitaxy
MeSH headings : Aluminum Oxide; Crystallization; Gallium / chemistry; Hot Temperature; Light; Microscopy, Atomic Force; Microscopy, Electron, Transmission; Molecular Conformation; Nanoparticles / chemistry; Nanotechnology / instrumentation; Nanotechnology / methods; Photochemistry / methods; Semiconductors; X-Rays
TL;DR: The NL layer grows epitaxially with the (0001) sapphire substrate by domain matching epitaxy, and this epitaxial relationship is remarkably maintained when c-GaN converts into h- GaN during high-temperature growth. (via Semantic Scholar)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2006 journal article

Characteristics of nucleation layer and epitaxy in GaN/sapphire heterostructures

Journal of Applied Physics, 99(5).

By: J. Narayan , P. Pant, A. Chugh, H. Choi & J. Fan

Source: NC State University Libraries
Added: August 6, 2018

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