Plamen P. Paskov

Erratum: "Phonon-boundary scattering and thermal transport in AlxGa1-xN: Effect of layer thickness" [Appl. Phys. Lett. 117, 252102 (2020)]

Tran, D. Q., Delgado-Carrascon, R., Muth, J. F., Paskova, T., Nawaz, M., Darakchieva, V., & Paskov, P. P. (2021, May 3). APPLIED PHYSICS LETTERS, Vol. 118.

Phonon-boundary scattering and thermal transport in AlxGa1-xN: Effect of layer thickness

APPLIED PHYSICS LETTERS, 117(25).

Thermal conductivity of ultra-wide bandgap thin layers - High Al-content AlGaN and beta-Ga2O3

Tran, D. Q., Blumenschein, N., Mock, A., Sukkaew, P., Zhang, H., Muth, J. F., … Darakchieva, V. (2020, February 15). PHYSICA B-CONDENSED MATTER, Vol. 579.

Thermal conductivity of bulk and thin film beta-Ga2O3 measured by the 3 omega technique

OXIDE-BASED MATERIALS AND DEVICES IX, Vol. 10533.

Anisotropic thermal conductivity of beta-Ga2O3 at elevated temperatures: Effect of Sn and Fe dopants

JOURNAL OF APPLIED PHYSICS, 121(23).

Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures - theory and experiment

AIP ADVANCES, 7(9).

Thermal conductivity of bulk GaN grown by HVPE: Effect of Si doping

Slomski, M., Paskov, P. P., Leach, J. H., Muth, J. F., & Paskova, T. (2017, August). PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 254.

Electron band bending of polar, semipolar and non-polar GaN surfaces

JOURNAL OF APPLIED PHYSICS, 119(10).