Pramod Reddy

https://orcid.org/0000-0002-8556-1178

III-Nitrides, Point defect control, Fermi level control, Passivation, silicon nitride, AlGaN, GaN, AlN, Schottky contacts, Ohmic contacts, Surface states, XPS

Works (56)

2020 journal article

Control of passivation and compensation in Mg-doped GaN by defect quasi Fermi level control

Journal of Applied Physics.

By: A. Klump, M. Hoffmann, F. Kaess, J. Tweedie, P. Reddy, R. Kirste, Z. Sitar, R. Collazo

Source: ORCID
Added: January 23, 2020

2020 journal article

High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates

Applied Physics Letters.

By: P. Reddy, M. Breckenridge, Q. Guo, A. Klump, D. Khachariya, S. Pavlidis, W. Mecouch, S. Mita ...

Source: ORCID
Added: February 25, 2020

2020 journal article

Pinning of energy transitions of defects, complexes, and surface states in AlGaN alloys

Applied Physics Letters.

By: P. Reddy, Z. Bryan, I. Bryan, J. Kim, S. Washiyama, R. Kirste, S. Mita, J. Tweedie ...

Source: ORCID
Added: January 23, 2020

2020 journal article

Role of polarity in SiN on Al/GaN and the pathway to stable contacts

Semiconductor Science and Technology, 2.

By: P. Reddy, D. Khachariya, D. Szymanski, M. Breckenridge, B. Sarkar, S. Pavlidis, R. Collazo, Z. Sitar, E. Kohn

Source: ORCID
Added: February 19, 2020

2020 journal article

Shallow Si donor in ion-implanted homoepitaxial AlN

Applied Physics Letters, 116(17), 172103.

By: M. Breckenridge, Q. Guo, A. Klump, B. Sarkar, Y. Guan, J. Tweedie, R. Kirste, S. Mita ...

Source: ORCID
Added: April 28, 2020

2020 journal article

The nature of the DX state in Ge-doped AlGaN

Applied Physics Letters.

By: P. Bagheri, R. Kirste, P. Reddy, S. Washiyama, S. Mita, B. Sarkar, R. Collazo, Z. Sitar

Source: ORCID
Added: June 4, 2020

2020 journal article

The role of chemical potential in compensation control in Si:AlGaN

Journal of Applied Physics.

By: S. Washiyama, P. Reddy, B. Sarkar, M. Breckenridge, Q. Guo, P. Bagheri, A. Klump, R. Kirste ...

Source: ORCID
Added: March 10, 2020

2019 conference paper

Al Rich AlGaN Based APDs on Single Crystal AlN with Solar Blindness and Room Temperature Operation

2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID).

Source: ORCID
Added: June 5, 2020

2019 journal article

Behavior of E. coli with Variable Surface Morphology Changes on Charged Semiconductor Interfaces

ACS Applied Bio Materials, 8.

By: D. Iyer, A. Gulyuk, P. Reddy, R. Kirste, R. Collazo, D. LaJeunesse, A. Ivanisevic

Source: ORCID
Added: August 24, 2019

2019 journal article

Design of AlGaN-based quantum structures for low threshold UVC lasers

Journal of Applied Physics.

By: Q. Guo, R. Kirste, S. Mita, J. Tweedie, P. Reddy, B. Moody, Y. Guan, S. Washiyama ...

Source: ORCID
Added: December 10, 2019

2019 conference paper

Development of Near UV Laser Diodes

2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID).

Source: ORCID
Added: June 5, 2020

2019 journal article

Interfacial Properties of Doped Semiconductor Materials Can Alter the Behavior of Pseudomonas aeruginosa Films

ACS Applied Electronic Materials, 8.

By: A. Gulyuk, D. LaJeunesse, P. Reddy, R. Kirste, R. Collazo & A. Ivanisevic

Source: ORCID
Added: August 9, 2019

2019 journal article

Modified approach to modeling barrier inhomogeneity in Schottky diodes

Semiconductor Science and Technology, 1.

By: P. Reddy & J. Kumar

Source: ORCID
Added: January 23, 2019

2019 article

The polarization field in Al-rich AlGaN multiple quantum wells

JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 58.

By: Q. Guo, R. Kirste, S. Mita, J. Tweedie, P. Reddy, S. Washiyama, M. Breckenridge, R. Collazo, Z. Sitar

Sources: Web Of Science, ORCID
Added: July 29, 2019

2018 journal article

6 kW/cm2 UVC laser threshold in optically pumped lasers achieved by controlling point defect formation

Applied Physics Express.

Source: ORCID
Added: June 5, 2020

2018 journal article

A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition

Journal of Applied Physics, 124(11).

By: S. Washiyama, P. Reddy, F. Kaess, R. Kirste, S. Mita, R. Collazo, Z. Sitar

Sources: NC State University Libraries, ORCID
Added: October 16, 2018

2018 conference paper

Au:Ga Alloyed Clusters to Enhance Al Contacts to P-type GaN

2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID).

Source: ORCID
Added: June 5, 2020

2018 journal article

Bioelectronics communication: encoding yeast regulatory responses using nanostructured gallium nitride thin films

Nanoscale, 10(24), 11506–11516.

By: P. Snyder, D. Lajeunesse, P. Reddy, R. Kirste, R. Collazo & A. Ivanisevic

Source: ORCID
Added: January 23, 2019

2018 journal article

Bulk and Surface Electronic Properties of Inorganic Materials: Tools to Guide Cellular Behavior

SMALL METHODS, 2(9).

By: P. Snyder, P. Reddy, R. Kirste, R. Collazo & A. Ivanisevic

Sources: NC State University Libraries, ORCID
Added: October 16, 2018

2018 conference paper

Design Challenges for Mid-UV Laser Diodes

2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID).

Source: ORCID
Added: June 5, 2020

2018 journal article

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

Applied Physics Letters, 112(6), 062102.

By: I. Bryan, Z. Bryan, S. Washiyama, P. Reddy, B. Gaddy, B. Sarkar, M. Breckenridge, Q. Guo ...

Source: ORCID
Added: January 23, 2019

2018 conference paper

Electrical and Structural Characterization of Si Implanted Homoepitaxially Grown AlN

2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID).

Source: ORCID
Added: June 5, 2020

2018 conference paper

Improving the Conductivity Limits in Si Doped Al Rich AlGaN

2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID).

Source: ORCID
Added: June 5, 2020

2018 journal article

N- and P- type Doping in Al-rich AlGaN and AlN

ECS Transactions.

Source: ORCID
Added: June 5, 2020

2018 journal article

Noninvasive Stimulation of Neurotypic Cells Using Persistent Photoconductivity of Gallium Nitride

ACS Omega.

By: P. Snyder, P. Reddy, R. Kirste, D. LaJeunesse, R. Collazo & A. Ivanisevic

Source: ORCID
Added: January 23, 2019

2018 journal article

On compensation in Si-doped AlN

Applied Physics Letters.

By: J. Harris, J. Baker, B. Gaddy, I. Bryan, Z. Bryan, K. Mirrielees, P. Reddy, R. Collazo, Z. Sitar, D. Irving

Source: ORCID
Added: January 23, 2019

2018 conference paper

On contacts to III-nitride deep-UV emitters

2018 3rd International Conference on Microwave and Photonics (ICMAP).

Source: ORCID
Added: June 5, 2020

2018 journal article

Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(6).

By: P. Reddy, S. Washiyama, W. Mecouch, L. Hernandez-Balderrama, F. Kaess, M. Breckenridge, B. Sarkar, B. Haidet ...

Sources: NC State University Libraries, ORCID
Added: December 10, 2018

2018 journal article

Point-Defect Nature of the Ultraviolet Absorption Band in AlN

Physical Review Applied, 9(5).

By: D. Alden, J. Harris, Z. Bryan, J. Baker, P. Reddy, S. Mita, G. Callsen, A. Hoffmann ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2018 journal article

Variably doped nanostructured gallium nitride surfaces can serve as biointerfaces for neurotypic PC12 cells and alter their behavior

RSC ADVANCES, 8(64), 36722–36730.

By: P. Snyder, P. Reddy, R. Kirste, D. LaJeunesse, R. Collazo & A. Ivanisevic

Sources: NC State University Libraries, ORCID
Added: November 26, 2018

2017 journal article

Defect quasi Fermi level control-based CN reduction in GaN: Evidence for the role of minority carriers

Applied Physics Letters, 111(15), 152101.

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2017 journal article

Defect-free Ni/GaN Schottky barrier behavior with high temperature stability

Applied Physics Letters, 110(1), 011603.

By: P. Reddy, B. Sarkar, F. Kaess, M. Gerhold, E. Kohn, R. Collazo, Z. Sitar

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2017 journal article

High free carrier concentration in p-GaN grown on AlN substrates

Applied Physics Letters, 111(3), 032109.

By: B. Sarkar, S. Mita, P. Reddy, A. Klump, F. Kaess, J. Tweedie, I. Bryan, Z. Bryan ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2017 conference paper

Material considerations for the development of III-nitride power devices

ECS Transactions, 80(7), 29–36.

By: B. Sarkar, P. Reddy, F. Kaess, B. Haidet, J. Tweedie, S. Mita, R. Kirste, E. Kohn ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2017 journal article

Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN

Japanese Journal of Applied Physics, 56(10), 100302.

By: B. Haidet, B. Sarkar, P. Reddy, I. Bryan, Z. Bryan, R. Kirste, R. Collazo, Z. Sitar

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2017 journal article

On Ni/Au Alloyed Contacts to Mg-Doped GaN

Journal of Electronic Materials, 9.

By: B. Sarkar, P. Reddy, A. Klump, F. Kaess, R. Rounds, R. Kirste, S. Mita, E. Kohn, R. Collazo, Z. Sitar

Source: ORCID
Added: January 23, 2019

2017 journal article

Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatment

Applied Physics Express, 10(7), 071001.

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2017 journal article

Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN

Journal of Applied Physics, 122(24), 245702.

By: P. Reddy, S. Washiyama, F. Kaess, R. Kirste, S. Mita, R. Collazo, Z. Sitar

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2016 thesis

A Study of Surfaces, Interfaces and Point Defect Control in III-Nitrides

By: P. Reddy

Source: ORCID
Added: June 5, 2020

2016 journal article

Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition

Journal of Applied Physics, 120(10), 105701.

By: F. Kaess, S. Mita, J. Xie, P. Reddy, A. Klump, L. Hernandez-Balderrama, S. Washiyama, A. Franke ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2016 journal article

Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications

Applied Physics Letters, 108(26), 261106.

By: D. Alden, W. Guo, R. Kirste, F. Kaess, I. Bryan, T. Troha, A. Bagal, P. Reddy ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2016 journal article

High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

Journal of Applied Physics, 119(14), 145702.

By: P. Reddy, S. Washiyama, F. Kaess, M. Breckenridge, L. Hernandez-Balderrama, B. Haidet, D. Alden, A. Franke ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2016 journal article

Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control

Journal of Applied Physics, 120(18), 185704.

By: P. Reddy, M. Hoffmann, F. Kaess, Z. Bryan, I. Bryan, M. Bobea, A. Klump, J. Tweedie ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2016 journal article

The effect of illumination power density on carbon defect configuration in silicon doped GaN

Journal of Applied Physics, 120(23), 235705.

By: F. Kaess, P. Reddy, D. Alden, A. Klump, L. Hernandez-Balderrama, A. Franke, R. Kirste, A. Hoffmann ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2015 journal article

A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN

Journal of Applied Physics, 117(24), 245702.

By: B. Haidet, I. Bryan, P. Reddy, Z. Bryan, R. Collazo & Z. Sitar

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2015 journal article

Charge neutrality levels, barrier heights, and band offsets at polar AlGaN

Applied Physics Letters, 107(9), 091603.

By: P. Reddy, I. Bryan, Z. Bryan, J. Tweedie, S. Washiyama, R. Kirste, S. Mita, R. Collazo, Z. Sitar

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2015 journal article

KOH based selective wet chemical etching of AlN, AlxGa1−xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode

Applied Physics Letters, 106(8), 082110.

By: W. Guo, R. Kirste, I. Bryan, Z. Bryan, L. Hussey, P. Reddy, J. Tweedie, R. Collazo, Z. Sitar

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2014 journal article

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

Applied Physics Letters, 105(22), 222101.

By: Z. Bryan, I. Bryan, B. Gaddy, P. Reddy, L. Hussey, M. Bobea, W. Guo, M. Hoffmann ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2014 journal article

Schottky contact formation on polar and non-polar AlN

Journal of Applied Physics, 116(19), 194503.

By: P. Reddy, I. Bryan, Z. Bryan, J. Tweedie, R. Kirste, R. Collazo, Z. Sitar

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2014 journal article

The effect of polarity and surface states on the Fermi level at III-nitride surfaces

Journal of Applied Physics, 116(12).

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2014 journal article

The effect of polarity and surface states on the Fermi level at III-nitride surfaces

Journal of Applied Physics, 116(12), -.

By: P. Reddy, I. Bryan, Z. Bryan, W. Guo, L. Hussey, R. Collazo, Z. Sitar

Source: ORCID
Added: January 23, 2019

2012 conference paper

Isotherm behavior studies of silica nanoparticles: Role of surfactant concentration and particle size

Proceedings - ISPTS-1, 1st International Symposium on Physics and Technology of Sensors, 79–82.

By: P. Devi, P. Reddy, S. Singh, M. Singla, C. Ghanshyam & A. Paul Pawan Kapur

Source: ORCID
Added: January 23, 2019

2012 conference paper

Optical and I-V studies on Au-ZnO-ITO based UV-sensing devices

16th International Workshop on Physics of Semiconductor Devices.

Source: ORCID
Added: June 5, 2020

2012 journal article

Sensing behavior study of silica-coated Ag nanoparticles deposited on glassy carbon toward nitrobenzene

Journal of Nanoparticle Research.

Source: ORCID
Added: January 23, 2019

2012 journal article

Synthesis and Optical Characterization of ZnO Quantum Dots and Nanorods

Advanced Science, Engineering and Medicine.

Source: ORCID
Added: June 5, 2020

2012 journal article

Synthesis and electrical behavior study of Mn3O4nanoceramic powder for low temperature NTC thermistor

Journal of Materials Science: Materials in Electronics, 23(10), 1891–1897.

By: P. Kohli, P. Devi, P. Reddy, K. Raina & M. Singla

Source: ORCID
Added: January 23, 2019

Employment

2016 - present

Adroit Materials inc. Cary, North Carolina, US
Research Scientist III-Nitride Technology

2013 - 2016

North Carolina State University Raleigh, NC, US
Research Assistant Materials Science and Engineering

2010 - 2012

Central Scientific Instruments Organisation CSIR Chandigarh, Punjab, IN
Scientist

Education

2012 - 2016

North Carolina State University Raleigh, NC, US
PhD Materials Science and Engineering

2008 - 2010

Indian Institute of Technology Kanpur Kanpur, Uttar Pradesh, IN
M.Tech Materials Science