III-Nitrides, Point defect control, Fermi level control, Passivation, silicon nitride, AlGaN, GaN, AlN, Schottky contacts, Ohmic contacts, Surface states, XPS
2024 journal article
Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activation
JOURNAL OF APPLIED PHYSICS, 135(2).
Contributors: K. Huynh *, Y. Wang *, M. Liao *, J. Tweedie *, * , M. Breckenridge n, R. Collazo n , Z. Sitar n
2023 conference paper
AlGaN Based Emitters and Detectors for Non-Line-of-Sight Communication
2023 IEEE Research and Applications of Photonics in Defense Conference, RAPID 2023 - Proceedings.
Contributors: R. Kirste, , R. Collazo n & Z. Sitar n *
2023 article
Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing
Stein, S. R., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., Tweedie, J., … Pavlidis, S. (2023, December 12). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 71.
Contributors: S. Stein n, D. Khachariya*, W. Mecouch*, S. Mita*, * , J. Tweedie*, K. Sierakowski *, G. Kamler *
2023 journal article
Anderson transition in compositionally graded p-AlGaN
JOURNAL OF APPLIED PHYSICS, 134(19).
Contributors: S. Rathkanthiwar n, * , C. Quiñones n, J. Loveless n, M. Kamiyama n, P. Bagheri n, D. Khachariya*, T. Eldred n
2023 article
Chemical Vapor Deposition of Monolayer MoS2 on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction Optoelectronics
Sengupta, R., Vaidya, S., Szymanski, D., Khachariya, D., Bockowski, M., Kamler, G., … Pavlidis, S. (2023, March 24). ACS APPLIED NANO MATERIALS, Vol. 3.
Contributors: R. Sengupta n, S. Vaidya n, D. Szymanski n, D. Khachariya*, M. Bockowski *, G. Kamler *, * , Z. Sitar n, R. Collazo n , S. Pavlidis n
2023 journal article
Demonstration of near-ideal Schottky contacts to Si-doped AlN
APPLIED PHYSICS LETTERS, 123(17).
Contributors: C. Quiñones n, D. Khachariya*, P. Bagheri n, * , S. Mita*, R. Kirste*, S. Rathkanthiwar n, J. Tweedie*
2023 journal article
High conductivity and low activation energy in p-type AlGaN
Applied Physics Letters, 122(9).
Contributors: S. Rathkanthiwar n, P. Bagheri n, D. Khachariya, S. Mita, C. Quiñones-García n , Y. Guan n, B. Moody, *
2023 journal article
High conductivity in Ge-doped AlN achieved by a non-equilibrium process
APPLIED PHYSICS LETTERS, 122(14).
Contributors: P. Bagheri n, C. Quiñones-Garcia n , D. Khachariya*, J. Loveless n, Y. Guan n, S. Rathkanthiwar n, * , R. Kirste*
2023 journal article
High p-conductivity in AlGaN enabled by polarization field engineering
APPLIED PHYSICS LETTERS, 122(15).
Contributors: S. Rathkanthiwar n, * , B. Moody*, C. Quiñones-García n , P. Bagheri n, D. Khachariya*, R. Dalmau *, S. Mita*
2023 journal article
Performance and reliability of state-of-the-art commercial UVC light emitting diodes
Solid-State Electronics, 209.
Contributors: J. Loveless n, R. Kirste *, B. Moody *, * , S. Rathkanthiwar n, J. Almeter n, R. Collazo n, Z. Sitar n
2023 journal article
Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor
APPLIED PHYSICS EXPRESS, 16(3).
Contributors: S. Stein n, D. Khachariya*, S. Mita*, M. Breckenridge n, J. Tweedie*, * , K. Sierakowski *, G. Kamler *
2022 journal article
<p>The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN</p>
APPLIED PHYSICS LETTERS, 120(3).
Contributors: K. Wang n, R. Kirste n, S. Mita n, S. Washiyama n, W. Mecouch n, n , R. Collazo n , Z. Sitar n
2022 conference paper
Controllable N-type Doping In Ultra-Wide Bandgap AlN By Chemical Potential Control
2022 Compound Semiconductor Week, CSW 2022.
Contributors: P. Bagheri n, C. Quinones-Garcia n, * , S. Mita *, R. Collazo n & Z. Sitar n
2022 article
Defects Evolution and Mg Segregation in Mg-implanted GaN with Ultra-High-Pressure Annealing
ArXiv.
2022 journal article
Doping and compensation in heavily Mg doped Al-rich AlGaN films
APPLIED PHYSICS LETTERS, 120(8).
Contributors: P. Bagheri n, A. Klump n, S. Washiyama n, M. Hayden Breckenridge n, J. Kim n, Y. Guan n, D. Khachariya n, C. Quiñones-García n
2022 journal article
Effects of temperature and oxygen partial pressure on electrical conductivity of Fe-doped β-Ga2O3 single crystals
Applied Physics Letters, 120(18).
Contributors: G. Ryu *, n , R. Collazo n & E. Dickey*
2022 journal article
GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions
JOURNAL OF APPLIED PHYSICS, 131(1).
Contributors: D. Szymanski n, D. Khachariya n, T. Eldred n, P. Bagheri n, S. Washiyama n, A. Chang *, S. Pavlidis n, R. Kirste*
2022 journal article
High electron mobility in AlN:Si by point and extended defect management
JOURNAL OF APPLIED PHYSICS, 132(18).
Contributors: P. Bagheri n, C. Quiñones-Garcia n , D. Khachariya n, S. Rathkanthiwar n, n , R. Kirste n, S. Mita n, J. Tweedie n, R. Collazo n , Z. Sitar n
2022 article
Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates
Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3.
Contributors: , W. Mecouch*, M. Hayden Breckenridge n, D. Khachariya n, P. Bagheri n, J. Hyun Kim n, Y. Guan n, S. Mita* *
2022 journal article
Low resistivity, p-type, N-Polar GaN achieved by chemical potential control
APPLIED PHYSICS EXPRESS, 15(8).
Contributors: S. Rathkanthiwar n, D. Szymanski n, D. Khachariya n, P. Bagheri n, J. Kim, S. Mita*, * , E. Kohn n
2022 journal article
On the conduction mechanism in compositionally graded AlGaN
APPLIED PHYSICS LETTERS, 121(7).
Contributors: S. Rathkanthiwar n, P. Bagheri n, D. Khachariya n, J. Kim n, Y. Kajikawa n, n , S. Mita n, R. Kirste n
2022 journal article
Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices
APPLIED PHYSICS EXPRESS, 15(5).
Contributors: S. Rathkanthiwar n, P. Bagheri n, D. Khachariya n, S. Mita*, S. Pavlidis n, * , R. Kirste*, J. Tweedie*, Z. Sitar n, R. Collazo n
2022 journal article
Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates
Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS, 120(17).
Contributors: D. Khachariya n, S. Mita*, * , S. Dangi n, J. Dycus*, P. Bagheri n, M. Breckenridge n, R. Sengupta n
2022 journal article
Schottky contacts to N-polar GaN with SiN interlayer for elevated temperature operation
Applied Physics Letters, 120(17).
Contributors: D. Khachariya n, D. Szymanski n, * , E. Kohn n, Z. Sitar n, R. Collazo n, S. Pavlidis n
2022 article
Spintronic Terahertz Emission in Ultrawide Bandgap Semiconductor/Ferromagnet Heterostructures
Comstock, A., Biliroglu, M., Seyitliyev, D., McConnell, A., Vetter, E., Reddy, P., … Sun, D. (2022, October 31). ADVANCED OPTICAL MATERIALS, Vol. 11.
Contributors: A. Comstock n, M. Biliroglu n, D. Seyitliyev n, A. McConnell n, E. Vetter n, * , R. Kirste*, D. Szymanski*
2022 article
Tracking of Point Defects in the Full Compositional Range of AlGaN via Photoluminescence Spectroscopy
Hyun Kim, J., Bagheri, P., Kirste, R., Reddy, P., Collazo, R., & Sitar, Z. (2022, December 9). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 220.
Contributors: J. Hyun Kim, P. Bagheri n, R. Kirste*, * , R. Collazo n & Z. Sitar n
2022 conference paper
UVC optoelectronics based on AlGaN on AlN single crystal substrates
2022 Compound Semiconductor Week, CSW 2022.
Contributors: , J. Loveless n, C. Quinones-Garcia n, D. Khachariya *, R. Kirste *, S. Pavlidis n, W. Mecouch *, S. Mita * *
2022 journal article
Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing
APPLIED PHYSICS EXPRESS, 15(10).
Contributors: D. Khachariya*, S. Stein n, W. Mecouch*, M. Breckenridge n, S. Rathkanthiwar n, S. Mita*, B. Moody*, *
2021 journal article
A pathway to highly conducting Ge-doped AlGaN
JOURNAL OF APPLIED PHYSICS, 130(20).
Contributors: P. Bagheri n, J. Kim n, S. Washiyama n, * , A. Klump n, R. Kirste*, S. Mita*, R. Collazo n , Z. Sitar n
2021 conference paper
Al<sub>0.85</sub>Ga<sub>0.15</sub>N/Al<sub>0.6</sub>Ga<sub>0.4</sub>N High Electron Mobility Transistors on Native AlN Substrates with >9 MV/cm Mesa Breakdown Fields
Device Research Conference - Conference Digest, DRC, 2021-June.
Contributors: D. Khachariya n, S. Mita *, * , S. Dangi n, P. Bagheri n, M. Hayden Breckenridge n, R. Sengupta n, E. Kohn n
2021 journal article
High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing
APPLIED PHYSICS LETTERS, 118(2).
Contributors: M. Breckenridge n, J. Tweedie n, n , Y. Guan n, P. Bagheri n, D. Szymanski n, S. Mita n, K. Sierakowski n
2021 journal article
High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN
APPLIED PHYSICS LETTERS, 118(11).
Contributors: M. Breckenridge n, P. Bagheri n, Q. Guo n, B. Sarkar n, D. Khachariya n, S. Pavlidis n, J. Tweedie*, R. Kirste*
2021 journal article
Native oxide reconstructions on AlN and GaN (0001) surfaces
JOURNAL OF APPLIED PHYSICS, 129(19).
Contributors: K. Mirrielees n, J. Dycus n, J. Baker n, * , R. Collazo n , Z. Sitar n, J. Lebeau*, D. Irving n
2021 journal article
On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).
Contributors: A. Jadhav*, P. Bagheri n, A. Klump n, D. Khachariya n, S. Mita*, * , S. Rathkanthiwar n, R. Kirste*
2021 journal article
On the Ge shallow-to-deep level transition in Al-rich AlGaN
JOURNAL OF APPLIED PHYSICS, 130(5).
Contributors: P. Bagheri n, n , S. Mita n, D. Szymanski n, J. Kim n, Y. Guan n, D. Khachariya n, A. Klump n
2021 journal article
On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers
APPLIED PHYSICS LETTERS, 118(12).
Contributors: D. Khachariya n, D. Szymanski n, M. Breckenridge n, * , E. Kohn n, Z. Sitar n, R. Collazo n , S. Pavlidis n
2021 journal article
Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping
APPLIED PHYSICS LETTERS, 118(4).
Contributors: S. Washiyama n, K. Mirrielees n, P. Bagheri n, J. Baker n, J. Kim n, Q. Guo n, R. Kirste*, Y. Guan n
2021 article
Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength
Kirste, R., Sarkar, B., Reddy, P., Guo, Q., Collazo, R., & Sitar, Z. (2021, December 15). JOURNAL OF MATERIALS RESEARCH, Vol. 12.
Contributors: R. Kirste n, B. Sarkar n, n , Q. Guo n, R. Collazo n & Z. Sitar n
2021 journal article
Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN
APPLIED PHYSICS LETTERS, 119(18).
Contributors: , D. Khachariya n, W. Mecouch *, M. Breckenridge n, P. Bagheri n, Y. Guan n, J. Kim n, S. Pavlidis n *
2021 journal article
Systematic oxygen impurity reduction in smooth N-polar GaN by chemical potential control
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).
Contributors: D. Szymanski*, K. Wang, F. Kaess*, R. Kirste*, S. Mita*, * , Z. Sitar*, R. Collazo*
2021 journal article
Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies
APPLIED PHYSICS LETTERS, 119(2).
Contributors: J. Kim n, P. Bagheri n, S. Washiyama n, A. Klump n, R. Kirste*, S. Mita*, * , R. Collazo n , Z. Sitar n
2021 article
UV illumination effects on AlGaN/GaN HEMTs for tunable RF oscillators
2021 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS), pp. 168–170.
Contributors: S. Stein n, M. Robbins n, * , R. Collazo n & S. Pavlidis n
2021 journal article
Weak localization and dimensional crossover in compositionally graded AlxGa1-xN
APPLIED PHYSICS LETTERS, 118(8).
Contributors: A. Al-Tawhid n, A. Shafe n, P. Bagheri n, Y. Guan n, * , S. Mita*, B. Moody*, R. Collazo n , Z. Sitar n, K. Ahadi n
2020 conference paper
A path toward vertical gan superjunction devices
ECS Transactions, 98(6), 69–79.
Contributors: D. Khachariya n, D. Syzmanski, * , E. Kohn n, Z. Sitar n, R. Collazo n , S. Pavlidis n
2020 journal article
Chemical treatment effects on Schottky contacts to metalorganic chemical vapor deposited n-type N-polar GaN
Journal of Applied Physics, 128(6).
Contributors: D. Khachariya n, D. Szymanski n, R. Sengupta n, * , E. Kohn n, Z. Sitar n, R. Collazo n, S. Pavlidis n
2020 journal article
Control of passivation and compensation in Mg-doped GaN by defect quasi Fermi level control
Journal of Applied Physics, 127(4).
Contributors: A. Klump n, M. Hoffmann n, F. Kaess n, J. Tweedie n, n , R. Kirste n, Z. Sitar n, R. Collazo n
2020 journal article
High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates
Applied Physics Letters, 116(8), 081101.
Contributors: , M. Hayden Breckenridge n, Q. Guo n, A. Klump n, D. Khachariya n, S. Pavlidis n, W. Mecouch *, S. Mita * *
2020 journal article
Impact of impurity-based phonon resonant scattering on thermal conductivity of single crystalline GaN
Applied Physics Letters, 117(8).
Contributors: P. Bagheri n, * , J. Kim n, R. Rounds n, T. Sochacki *, R. Kirste *, M. Bockowski *, R. Collazo n, Z. Sitar n
2020 journal article
Impact of the effective refractive index in AlGaN-based mid-UV laser structures on waveguiding
Japanese Journal of Applied Physics, 7(9).
Contributors: Q. Guo n, R. Kirste *, * , W. Mecouch *, Y. Guan n, S. Mita *, S. Washiyama n, J. Tweedie *, Z. Sitar n, R. Collazo n
2020 journal article
Modulating the Stress Response of E. coli at GaN Interfaces Using Surface Charge, Surface Chemistry, and Genetic Mutations
ACS APPLIED BIO MATERIALS, 3(10), 7211–7218.
Contributors: S. Gleco n, * , R. Kirste*, R. Collazo n , D. Lajeunesse * & A. Ivanisevic n
2020 journal article
Observation of carrier concentration dependent spintronic terahertz emission from n-GaN/NiFe heterostructures
Applied Physics Letters, 117(9).
Contributors: E. Vetter n, M. Biliroglu n, D. Seyitliyev n, * , R. Kirste *, Z. Sitar n, R. Collazo n, K. Gundogdu n, D. Sun n
2020 journal article
Oxidative Stress Transcriptional Responses of Escherichia coli at GaN Interfaces
ACS Applied Bio Materials, 3(12), 9073–9081.
Contributors: S. Gleco n, T. Noussi*, A. Jude*, * , R. Kirste *, R. Collazo n, D. Lajeunesse *, A. Ivanisevic n
2020 journal article
Pinning of energy transitions of defects, complexes, and surface states in AlGaN alloys
Applied Physics Letters, 116(3).
Contributors: , Z. Bryan n, I. Bryan n, J. Kim n, S. Washiyama n, R. Kirste n, S. Mita n, J. Tweedie n n
2020 journal article
Role of polarity in SiN on Al/GaN and the pathway to stable contacts
Semiconductor Science and Technology, 2(5), 055007.
Contributors: , D. Khachariya n, D. Szymanski n, M. Breckenridge n, B. Sarkar n, S. Pavlidis n, R. Collazo n , Z. Sitar n, E. Kohn n *
2020 journal article
Shallow Si donor in ion-implanted homoepitaxial AlN
Applied Physics Letters, 116(17), 172103.
Contributors: M. Hayden Breckenridge n, Q. Guo n, A. Klump n, B. Sarkar n, Y. Guan n, J. Tweedie n, R. Kirste n, S. Mita n
2020 journal article
The 2020 UV emitter roadmap
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 53(50).
Contributors: H. Amano *, R. Collazo n , C. De Santi *, S. Einfeldt *, M. Funato *, J. Glaab *, S. Hagedorn *, A. Hirano
2020 journal article
The nature of the DX state in Ge-doped AlGaN
Applied Physics Letters.
2020 journal article
The role of chemical potential in compensation control in Si:AlGaN
Journal of Applied Physics, 127(10).
Contributors: S. Washiyama n, * , B. Sarkar n, M. Breckenridge n, Q. Guo n, P. Bagheri n, A. Klump n, R. Kirste
2019 conference paper
Al Rich AlGaN Based APDs on Single Crystal AlN with Solar Blindness and Room Temperature Operation
2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID).
Contributors: , M. Hayden Breckenridge n, A. Klump n, Q. Guo n, S. Mita *, B. Sarkar n, R. Kirste *, B. Moody * *
2019 journal article
Behavior of E. coli with Variable Surface Morphology Changes on Charged Semiconductor Interfaces
ACS Applied Bio Materials, 2(9), 4044–4051.
Contributors: D. Iyer*, A. Gulyuk n, * , R. Kirste *, R. Collazo n, D. Lajeunesse *, A. Ivanisevic n
2019 journal article
Design of AlGaN-based quantum structures for low threshold UVC lasers
Journal of Applied Physics, 126(22).
Contributors: Q. Guo n, R. Kirste *, S. Mita *, J. Tweedie *, * , B. Moody *, Y. Guan n, S. Washiyama n
2019 conference paper
Development of Near UV Laser Diodes
2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID).
Contributors: R. Kirste *, S. Mita *, * , A. Franke, Q. Guo *, K. Wang *, R. Collazo *, Z. Sitar *
2019 journal article
Interfacial Properties of Doped Semiconductor Materials Can Alter the Behavior of Pseudomonas aeruginosa Films
ACS Applied Electronic Materials, 1(8), 1641–1652.
Contributors: A. Gulyuk n, D. Lajeunesse *, * , R. Kirste *, R. Collazo n & A. Ivanisevic n
2019 journal article
Modified approach to modeling barrier inhomogeneity in Schottky diodes
Semiconductor Science and Technology, 1(3).
Contributors: & J. Kumar * *
2019 conference paper
Quantum well-width dependence study on AlGaN based UVC laser
2019 IEEE Research and Applications of Photonics in Defense Conference, RAPID 2019 - Proceedings.
Contributors: Q. Guo n, R. Kirste *, * , S. Mita *, Y. Guan n, R. Collazo n, Z. Sitar n
2019 journal article
Temperature-dependent Schottky barrier parameters of Ni/Au on n-type (001) β-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diode
Vacuum, 171.
Contributors: P. Reddy *, V. Janardhanam *, K. Shim *, V. Reddy *, S. Lee *, S. Park, C. Choi *
2019 article
The polarization field in Al-rich AlGaN multiple quantum wells
Guo, Q., Kirste, R., Mita, S., Tweedie, J., Reddy, P., Washiyama, S., … Sitar, Z. (2019, June 1). JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 58.
Contributors: Q. Guo n, R. Kirste n, S. Mita n, J. Tweedie n, n , S. Washiyama n, M. Breckenridge n, R. Collazo n , Z. Sitar n
2018 journal article
6 kW/cm2 UVC laser threshold in optically pumped lasers achieved by controlling point defect formation
Applied Physics Express, 11(8).
Contributors: R. Kirste n, Q. Guo n, J. Dycus n, A. Franke, S. Mita n, B. Sarkar n, n , J. LeBeau n, R. Collazo n, Z. Sitar n
2018 journal article
A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition
JOURNAL OF APPLIED PHYSICS, 124(11).
Contributors: S. Washiyama n, * , F. Kaess n, R. Kirste*, S. Mita*, R. Collazo n , Z. Sitar n
2018 conference paper
Au:Ga Alloyed Clusters to Enhance Al Contacts to P-type GaN
2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID), 23–26.
Contributors: A. Klump n, F. Kaess n, B. Sarkar, R. Kirste n, R. Collazo n, * , S. Mita, Z. Sitar n, M. Breckenridge n, E. Kohn n
2018 journal article
Bioelectronics communication: encoding yeast regulatory responses using nanostructured gallium nitride thin films
Nanoscale, 10(24), 11506–11516.
Contributors: P. Snyder n, D. Lajeunesse *, * , R. Kirste *, R. Collazo n & A. Ivanisevic n
2018 review
Bulk and Surface Electronic Properties of Inorganic Materials: Tools to Guide Cellular Behavior
[Review of ]. SMALL METHODS, 2(9).
Contributors: P. Snyder n, * , R. Kirste*, R. Collazo n & A. Ivanisevic n
2018 conference paper
Design Challenges for Mid-UV Laser Diodes
2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID), 131–134.
Contributors: Q. Guo n, R. Kirste *, * , S. Mita *, R. Collazo n & Z. Sitar n
2018 journal article
Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD
APPLIED PHYSICS LETTERS, 112(6).
Contributors: I. Bryan n, Z. Bryan n, S. Washiyama n, * , B. Gaddy n, B. Sarkar n, M. Breckenridge n, Q. Guo n
2018 journal article
Effect of copper phthalocyanine thickness on surface morphology, optical and electrical properties of Au/CuPc/n-Si heterojunction
Applied Physics A: Materials Science and Processing, 124(2).
Contributors: P. Reddy *, V. Janardhanam *, I. Jyothi*, C. Harsha, V. Reddy *, S. Lee *, J. Won *, C. Choi *
2018 conference paper
Electrical and Structural Characterization of Si Implanted Homoepitaxially Grown AlN
2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID), 27–30.
Contributors: M. Breckenridge n, J. Tweedie n, L. Hernandez-Balderrama n, R. Kirste n, A. Klump n, R. Collazo n, n , Z. Sitar n
2018 conference paper
Improving the Conductivity Limits in Si Doped Al Rich AlGaN
2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID), 87–90.
Contributors: , Q. Guo n, J. Tweedie n, S. Washiyama n, F. Kaess n, S. Mita n, M. Breckenridge *, R. Kirste n *
2018 journal article
N- and P- type Doping in Al-rich AlGaN and AlN
ECS Transactions, 86(12), 25–30.
Contributors: B. Sarkar n, S. Washiyama n, M. Breckenridge n, A. Klump n, J. Baker n, * , J. Tweedie *, S. Mita *
2018 journal article
Noninvasive Stimulation of Neurotypic Cells Using Persistent Photoconductivity of Gallium Nitride
ACS Omega, 3(1), 615–621.
Contributors: P. Snyder n, * , R. Kirste *, D. Lajeunesse *, R. Collazo n & A. Ivanisevic n
2018 journal article
On compensation in Si-doped AlN
APPLIED PHYSICS LETTERS, 112(15).
Contributors: J. Harris n, J. Baker n, B. Gaddy n, I. Bryan n, Z. Bryan n, K. Mirrielees n, * , R. Collazo n , Z. Sitar n, D. Irving n
2018 conference paper
On contacts to III-nitride deep-UV emitters
2018 3rd International Conference on Microwave and Photonics (ICMAP), 2018-January, 1–2.
Contributors: B. Sarkar n, * , A. Klump n, R. Rounds n, M. Breckenridge n, B. Haidet n, S. Mita, R. Kirste, R. Collazo n , Z. Sitar n
2018 journal article
Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(6).
Contributors: , S. Washiyama n, W. Mecouch n, L. Hernandez-Balderrama n, F. Kaess n, M. Hayden Breckenridge n, B. Sarkar n, B. Haidet n n
2018 journal article
Point-Defect Nature of the Ultraviolet Absorption Band in AIN
PHYSICAL REVIEW APPLIED, 9(5).
Contributors: D. Alden n, J. Harris n, Z. Bryan n, J. Baker n, n , S. Mita *, G. Callsen *, A. Hoffmann *
2018 journal article
Variably doped nanostructured gallium nitride surfaces can serve as biointerfaces for neurotypic PC12 cells and alter their behavior
RSC ADVANCES, 8(64), 36722–36730.
Contributors: P. Snyder n, * , R. Kirste*, D. LaJeunesse *, R. Collazo n & A. Ivanisevic n
2017 article
(Invited) Material Considerations for the Development of III-nitride Power Devices
GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 7, Vol. 80, pp. 29–36.
Contributors: B. Sarkar n, n , F. Kaess n, B. Haidet n, J. Tweedie*, S. Mita*, R. Kirste*, E. Kohn n, R. Collazo n , Z. Sitar n
2017 journal article
Defect quasi Fermi level control-based C-N reduction in GaN: Evidence for the role of minority carriers
APPLIED PHYSICS LETTERS, 111(15).
Contributors: , F. Kaess n, J. Tweedie*, R. Kirste*, S. Mita*, R. Collazo n , Z. Sitar n n
2017 journal article
Defect-free Ni/GaN Schottky barrier behavior with high temperature stability
APPLIED PHYSICS LETTERS, 110(1).
Contributors: , B. Sarkar n, F. Kaess n, M. Gerhold*, E. Kohn n, R. Collazo n , Z. Sitar n n
2017 journal article
High free carrier concentration in p-GaN grown on AlN substrates
APPLIED PHYSICS LETTERS, 111(3).
2017 journal article
Microstructural and electrical properties of Al/n-type Si Schottky diodes with Au-CuPc nanocomposite films as interlayer
Superlattices and Microstructures, 111, 506–517.
Contributors: P. Reddy *, V. Janardhanam *, I. Jyothi*, H. Chang *, S. Lee *, M. Lee*, V. Reddy *, C. Choi *
2017 journal article
Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN
JAPANESE JOURNAL OF APPLIED PHYSICS, 56(10).
Contributors: B. Haidet n, B. Sarkar n, n , I. Bryan n, Z. Bryan n, R. Kirste *, R. Collazo n , Z. Sitar n
2017 journal article
On Ni/Au Alloyed Contacts to Mg-Doped GaN
Journal of Electronic Materials, 47(1), 305–311.
Contributors: B. Sarkar n, n , A. Klump n, F. Kaess n, R. Rounds n, R. Kirste n, S. Mita n, E. Kohn n, R. Collazo n , Z. Sitar n
2017 journal article
Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatment
APPLIED PHYSICS EXPRESS, 10(7).
Contributors: B. Sarkar n, B. Haidet n, n , R. Kirste n, R. Collazo n & Z. Sitar n
2017 journal article
Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN
Journal of Applied Physics, 122(24), 245702.
Contributors: , S. Washiyama n, F. Kaess n, R. Kirste n, S. Mita n, R. Collazo n , Z. Sitar n n
2016 thesis
A Study of Surfaces, Interfaces and Point Defect Control in III-Nitrides
2016 journal article
Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition
JOURNAL OF APPLIED PHYSICS, 120(10).
Contributors: F. Kaess n, S. Mita n, J. Xie n, n , A. Klump n, L. Hernandez-Balderrama n, S. Washiyama n, A. Franke
2016 journal article
Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications
APPLIED PHYSICS LETTERS, 108(26).
Contributors: D. Alden n, W. Guo n, R. Kirste n, F. Kaess n, I. Bryan n, T. Troha n, A. Bagal n, n
2016 journal article
High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies
JOURNAL OF APPLIED PHYSICS, 119(14).
Contributors: , S. Washiyama n, F. Kaess n, M. Hayden Breckenridge n, L. Hernandez-Balderrama n, B. Haidet n, D. Alden n, A. Franke n
2016 journal article
Microstructural, electrical and carrier transport properties of Au/NiO/n-GaN heterojunction with a nickel oxide interlayer
RSC Advances, 6(107), 105761–105770.
Contributors: V. Reddy *, P. Reddy *, I. Reddy * & C. Choi *
2016 journal article
Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control
JOURNAL OF APPLIED PHYSICS, 120(18).
Contributors: , M. Hoffmann n, F. Kaess n, Z. Bryan n, I. Bryan n, M. Bobea n, A. Klump n, J. Tweedie n n
2016 journal article
The effect of illumination power density on carbon defect configuration in silicon doped GaN
JOURNAL OF APPLIED PHYSICS, 120(23).
Contributors: F. Kaess n, n , D. Alden n, A. Klump n, L. Hernandez-Balderrama n, A. Franke, R. Kirste *, A. Hoffmann *, R. Collazo n , Z. Sitar n
2015 journal article
A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN
JOURNAL OF APPLIED PHYSICS, 117(24).
Contributors: B. Haidet n, I. Bryan n, n , Z. Bryan n, R. Collazo n & Z. Sitar n
2015 journal article
Charge neutrality levels, barrier heights, and band offsets at polar AlGaN
APPLIED PHYSICS LETTERS, 107(9).
Contributors: , I. Bryan n, Z. Bryan n, J. Tweedie, S. Washiyama n, R. Kirste n, S. Mita *, R. Collazo n , Z. Sitar n n
2015 journal article
KOH based selective wet chemical etching of AlN, AlxGa1-xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode
APPLIED PHYSICS LETTERS, 106(8).
2014 journal article
Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN
APPLIED PHYSICS LETTERS, 105(22).
2014 journal article
Schottky contact formation on polar and non-polar AlN
JOURNAL OF APPLIED PHYSICS, 116(19).
Contributors: , I. Bryan n, Z. Bryan n, J. Tweedie n, R. Kirste n, R. Collazo n , Z. Sitar n n
2014 journal article
The effect of polarity and surface states on the Fermi level at III-nitride surfaces
JOURNAL OF APPLIED PHYSICS, 116(12).
2014 journal article
The effect of polarity and surface states on the Fermi level at III-nitride surfaces
Journal of Applied Physics, 116(12), -.
2012 conference paper
Isotherm behavior studies of silica nanoparticles: Role of surfactant concentration and particle size
Proceedings - ISPTS-1, 1st International Symposium on Physics and Technology of Sensors, 79–82.
Contributors: P. Devi *, * , S. Singh *, M. Singla*, C. Ghanshyam*, A. Paul Pawan Kapur, Vishal
2012 conference paper
Optical and I-V studies on Au-ZnO-ITO based UV-sensing devices
16th International Workshop on Physics of Semiconductor Devices.