Pramod Reddy
III-Nitrides, Point defect control, Fermi level control, Passivation, silicon nitride, AlGaN, GaN, AlN, Schottky contacts, Ohmic contacts, Surface states, XPS
Works (121)
2026 article
Enabling the growth of thick, relaxed AlGaN films on bulk GaN substrates
Almeter, J., Wang, K., Kirste, R., Reddy, P., Mecouch, W., Mita, S., … Sitar, Z. (2026, February 24). Journal of Applied Physics.
open access via doi.org (publisher)2026 article
High-current, high-voltage AlN p–n junction diodes enabled by compositional grading
Quiñones, C. E., Reddy, P., Mita, S., Rathkanthiwar, S., Liu, C.-I., Khachariya, D., … Sitar, Z. (2026, January 12). Applied Physics Letters.
2026 article
Hole transport analysis in N-polar p-GaN
Kamiyama, M., Rathkanthiwar, S., Quiñones, C. E., Mita, S., Reddy, P., Kirste, R., … Sitar, Z. (2026, February 18). Journal of Applied Physics.
2025 article
AlGaN based UVC LEDs on AlN with reflective contacts
Kirste, R., Loveless, J., Almeter, J., Moody, B., Reddy, P., Rathkanthiwar, S., … Sitar, Z. (2025, March 19). (Vol. 3). Vol. 3.
2025 article
Experimental Characterization of Impact Ionization and Projection of Critical Electric Fields in High‐Al Content AlGaN
Zhu, Z., Reddy, P., Satapathy, Y., Cao, L., Xiong, J., Gutierrez, M., … Fay, P. (2025, June 24). Physica Status Solidi (a), Vol. 6.
2025 article
Mg-annealed anode contacts to reduce the on-resistance of GaN pn diodes formed via Mg implantation and ultra-high pressure annealing
Hasan, M. A., Alessi, M., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., … Pavlidis, S. (2025, August 15). Applied Physics Express, Vol. 18.
2025 article
On the origin of carrier loss in Mg-doped N-polar GaN
Kamiyama, M., Rathkanthiwar, S., Quiñones, C. E., Mita, S., Khachariya, D., Reddy, P., … Sitar, Z. (2025, December 15). Applied Physics Letters.
2025 article
Pathway to >60% Efficiency in AlGaN‐Based Ultraviolet‐C Light‐Emitting Diodes
Loveless, J., Almeter, J., Kirste, R., Moody, B., Reddy, P., Rathkanthiwar, S., … Sitar, Z. (2025, October 28). Physica Status Solidi (a).
2024 article
Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activation
Huynh, K., Wang, Y., Liao, M. E., Tweedie, J., Reddy, P., Breckenridge, M. H., … Goorsky, M. S. (2024, January 11). Journal of Applied Physics, Vol. 135.
Contributors: K. Huynh *, Y. Wang *, M. Liao *, J. Tweedie *, * , M. Breckenridge n, R. Collazo n , Z. Sitar n
2024 article
High-current, high-voltage AlN Schottky barrier diodes
Quiñones, C. E., Khachariya, D., Reddy, P., Mita, S., Almeter, J., Bagheri, P., … Sitar, Z. (2024, September 30). Applied Physics Express, Vol. 17.
2023 article
AlGaN Based Emitters and Detectors for Non-Line-of-Sight Communication
Kirste, R., Reddy, P., Collazo, R., & Sitar, Z. (2023, September 1). 2023 IEEE Research and Applications of Photonics in Defense Conference, RAPID 2023 - Proceedings.
Contributors: R. Kirste, * , R. Collazo n & Z. Sitar n
2023 article
Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing
Stein, S. R., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., Tweedie, J., … Pavlidis, S. (2023, December 12). IEEE Transactions on Electron Devices, Vol. 12, pp. 1494–1501.
Contributors: S. Stein n, D. Khachariya*, W. Mecouch*, S. Mita*, * , J. Tweedie*, K. Sierakowski *, G. Kamler *
2023 article
Anderson transition in compositionally graded p-AlGaN
Rathkanthiwar, S., Reddy, P., Quiñones, C. E., Loveless, J., Kamiyama, M., Bagheri, P., … Sitar, Z. (2023, November 15). Journal of Applied Physics, Vol. 134.
Contributors: S. Rathkanthiwar n, * , C. Quiñones n , J. Loveless n, M. Kamiyama n , P. Bagheri n, D. Khachariya*, T. Eldred n
2023 article
Chemical Vapor Deposition of Monolayer MoS2 on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction Optoelectronics
Sengupta, R., Vaidya, S., Szymanski, D., Khachariya, D., Bockowski, M., Kamler, G., … Pavlidis, S. (2023, March 24). ACS Applied Nano Materials, Vol. 3, pp. 5081–5086.
Contributors: R. Sengupta n, S. Vaidya n, D. Szymanski n, D. Khachariya*, M. Bockowski *, G. Kamler *, * , Z. Sitar n, R. Collazo n , S. Pavlidis n
2023 article
Demonstration of near-ideal Schottky contacts to Si-doped AlN
Quiñones, C. E., Khachariya, D., Bagheri, P., Reddy, P., Mita, S., Kirste, R., … Sitar, Z. (2023, October 23). Applied Physics Letters, Vol. 123.
Contributors: C. Quiñones n , D. Khachariya*, P. Bagheri n, * , S. Mita*, R. Kirste*, S. Rathkanthiwar n, J. Tweedie*
2023 article
High conductivity and low activation energy in p-type AlGaN
Rathkanthiwar, S., Bagheri, P., Khachariya, D., Mita, S., Quiñones-García, C., Guan, Y., … Sitar, Z. (2023, February 27). Applied Physics Letters, Vol. 122.
Contributors: S. Rathkanthiwar n, P. Bagheri n, D. Khachariya, S. Mita, C. Quiñones-García n , Y. Guan n, B. Moody, *
2023 article
High conductivity in Ge-doped AlN achieved by a non-equilibrium process
Bagheri, P., Quiñones-Garcia, C., Khachariya, D., Loveless, J., Guan, Y., Rathkanthiwar, S., … Sitar, Z. (2023, April 3). Applied Physics Letters, Vol. 122.
Contributors: P. Bagheri n, C. Quiñones-Garcia n , D. Khachariya*, J. Loveless n, Y. Guan n, S. Rathkanthiwar n, * , R. Kirste*
2023 article
High p-conductivity in AlGaN enabled by polarization field engineering
Rathkanthiwar, S., Reddy, P., Moody, B., Quiñones-García, C., Bagheri, P., Khachariya, D., … Sitar, Z. (2023, April 10). Applied Physics Letters, Vol. 122.
Contributors: S. Rathkanthiwar n, * , B. Moody*, C. Quiñones-García n , P. Bagheri n, D. Khachariya*, R. Dalmau *, S. Mita*
2023 article
Performance and reliability of state-of-the-art commercial UVC light emitting diodes
Loveless, J., Kirste, R., Moody, B., Reddy, P., Rathkanthiwar, S., Almeter, J., … Sitar, Z. (2023, September 13). Solid-State Electronics, Vol. 209.
Contributors: J. Loveless n, R. Kirste *, B. Moody *, * , S. Rathkanthiwar n, J. Almeter n, R. Collazo n, Z. Sitar n
2023 article
Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor
Stein, S. R., Khachariya, D., Mita, S., Breckenridge, M. H., Tweedie, J., Reddy, P., … Pavlidis, S. (2023, March 1). Applied Physics Express, Vol. 16.
Contributors: S. Stein n, D. Khachariya*, S. Mita*, M. Breckenridge n, J. Tweedie*, * , K. Sierakowski *, G. Kamler *
2022 article
Controllable N-type Doping In Ultra-Wide Bandgap AlN By Chemical Potential Control
Bagheri, P., Quinones-Garcia, C., Reddy, P., Mita, S., Collazo, R., & Sitar, Z. (2022, June 1). 2022 Compound Semiconductor Week, CSW 2022.
Contributors: P. Bagheri n, C. Quinones-Garcia n, * , S. Mita *, R. Collazo n & Z. Sitar n
2022 article
Defects Evolution and Mg Segregation in Mg-implanted GaN with Ultra-High-Pressure Annealing
Wang, Y., Huynh, K., Liao, M. E., Tweedie, J., Reddy, P., Breckenridge, M. H., … Goorsky, M. S. (2022, April 21). ArXiv (Cornell University).
2022 article
Doping and compensation in heavily Mg doped Al-rich AlGaN films
Bagheri, P., Klump, A., Washiyama, S., Breckenridge, M. H., Kim, J. H., Guan, Y., … Sitar, Z. (2022, February 21). Applied Physics Letters, Vol. 2.
Contributors: P. Bagheri n, A. Klump n, S. Washiyama n, M. Breckenridge n, J. Kim n, Y. Guan n, D. Khachariya n, C. Quiñones-García n
2022 article
Effects of temperature and oxygen partial pressure on electrical conductivity of Fe-doped β-Ga2O3 single crystals
Ryu, G., Reddy, P., Collazo, R., & Dickey, E. C. (2022, May 2). Applied Physics Letters, Vol. 120.
Contributors: G. Ryu *, n , R. Collazo n & E. Dickey*
2022 article
GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions
Szymanski, D., Khachariya, D., Eldred, T. B., Bagheri, P., Washiyama, S., Chang, A., … Sitar, Z. (2022, January 3). Journal of Applied Physics, Vol. 1.
Contributors: D. Szymanski n, D. Khachariya n, T. Eldred n, P. Bagheri n, S. Washiyama n, A. Chang *, S. Pavlidis n, R. Kirste*
2022 article
High electron mobility in AlN:Si by point and extended defect management
Bagheri, P., Quiñones-Garcia, C., Khachariya, D., Rathkanthiwar, S., Reddy, P., Kirste, R., … Sitar, Z. (2022, November 9). Journal of Applied Physics, Vol. 11.
Contributors: P. Bagheri n, C. Quiñones-Garcia n , D. Khachariya n, S. Rathkanthiwar n, n , R. Kirste n, S. Mita n, J. Tweedie n, R. Collazo n , Z. Sitar n
2022 article
Large‐Area, Solar‐Blind, Sub‐250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates
Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, February 19). Physica Status Solidi (RRL) - Rapid Research Letters, Vol. 3, p. 2100619.
Contributors: * , W. Mecouch*, M. Breckenridge n, D. Khachariya n, P. Bagheri n, J. Kim n, Y. Guan n, S. Mita*
2022 article
Low resistivity, p-type, N-Polar GaN achieved by chemical potential control
Rathkanthiwar, S., Szymanski, D., Khachariya, D., Bagheri, P., Kim, J. H., Mita, S., … Sitar, Z. (2022, July 19). Applied Physics Express, Vol. 8.
Contributors: S. Rathkanthiwar n, D. Szymanski n, D. Khachariya n, P. Bagheri n, J. Kim n, S. Mita*, * , E. Kohn n
2022 article
On the conduction mechanism in compositionally graded AlGaN
Rathkanthiwar, S., Bagheri, P., Khachariya, D., Kim, J. H., Kajikawa, Y., Reddy, P., … Sitar, Z. (2022, August 15). Applied Physics Letters, Vol. 8.
Contributors: S. Rathkanthiwar n, P. Bagheri n, D. Khachariya n, J. Kim n, Y. Kajikawa n, n , S. Mita n, R. Kirste n
2022 article
Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices
Rathkanthiwar, S., Bagheri, P., Khachariya, D., Mita, S., Pavlidis, S., Reddy, P., … Collazo, R. (2022, April 7). Applied Physics Express, Vol. 5.
Contributors: S. Rathkanthiwar n, P. Bagheri n, D. Khachariya n, S. Mita*, S. Pavlidis n, * , R. Kirste*, J. Tweedie*, Z. Sitar n, R. Collazo n
2022 article
Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates
Khachariya, D., Mita, S., Reddy, P., Dangi, S., Dycus, J. H., Bagheri, P., … Pavlidis, S. (2022, April 25). Applied Physics Letters, Vol. 4.
Contributors: D. Khachariya n, S. Mita*, * , S. Dangi n, J. Dycus*, P. Bagheri n, M. Breckenridge n, R. Sengupta n
2022 article
Schottky contacts to N-polar GaN with SiN interlayer for elevated temperature operation
Khachariya, D., Szymanski, D., Reddy, P., Kohn, E., Sitar, Z., Collazo, R., & Pavlidis, S. (2022, April 25). Applied Physics Letters, Vol. 120.
Contributors: D. Khachariya n, D. Szymanski n, * , E. Kohn n, Z. Sitar n, R. Collazo n, S. Pavlidis n
2022 article
Spintronic Terahertz Emission in Ultrawide Bandgap Semiconductor/Ferromagnet Heterostructures
Comstock, A., Biliroglu, M., Seyitliyev, D., McConnell, A., Vetter, E., Reddy, P., … Sun, D. (2022, October 31). Advanced Optical Materials, Vol. 10.
Contributors: A. Comstock n, M. Biliroglu n, D. Seyitliyev n, A. McConnell n, E. Vetter n, * , R. Kirste*, D. Szymanski*
2022 article
The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN
Wang, K., Kirste, R., Mita, S., Washiyama, S., Mecouch, W., Reddy, P., … Sitar, Z. (2022, January 17). Applied Physics Letters, Vol. 1.
Contributors: K. Wang n, R. Kirste n, S. Mita n, S. Washiyama n, W. Mecouch n, n , R. Collazo n , Z. Sitar n
2022 article
Tracking of Point Defects in the Full Compositional Range of AlGaN via Photoluminescence Spectroscopy
Kim, J. H., Bagheri, P., Kirste, R., Reddy, P., Collazo, R., & Sitar, Z. (2022, October 26). Physica Status Solidi (a), Vol. 12.
Contributors: J. Kim n, P. Bagheri n, R. Kirste*, * , R. Collazo n & Z. Sitar n
2022 article
UVC optoelectronics based on AlGaN on AlN single crystal substrates
Reddy, P., Loveless, J., Quinones-Garcia, C., Khachariya, D., Kirste, R., Pavlidis, S., … Sitar, Z. (2022, June 1). 2022 Compound Semiconductor Week, CSW 2022.
Contributors: * , J. Loveless n, C. Quinones-Garcia n, D. Khachariya *, R. Kirste *, S. Pavlidis n, W. Mecouch *, S. Mita *
2022 article
Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing
Khachariya, D., Stein, S., Mecouch, W., Breckenridge, M. H., Rathkanthiwar, S., Mita, S., … Sitar, Z. (2022, September 5). Applied Physics Express, Vol. 10.
Contributors: D. Khachariya*, S. Stein n, W. Mecouch*, M. Breckenridge n, S. Rathkanthiwar n, S. Mita*, B. Moody*, *
2021 article
A pathway to highly conducting Ge-doped AlGaN
Bagheri, P., Kim, J. H., Washiyama, S., Reddy, P., Klump, A., Kirste, R., … Sitar, Z. (2021, November 22). Journal of Applied Physics, Vol. 11.
Contributors: P. Bagheri n, J. Kim n, S. Washiyama n, * , A. Klump n, R. Kirste*, S. Mita*, R. Collazo n , Z. Sitar n
2021 article
Al0.85Ga0.15N/Al0.6Ga0.4N High Electron Mobility Transistors on Native AlN Substrates with >9 MV/cm Mesa Breakdown Fields
Khachariya, D., Mita, S., Reddy, P., Dangi, S., Bagheri, P., Breckenridge, M. H., … Pavlidis, S. (2021, June 20). Device Research Conference - Conference Digest, DRC.
Contributors: D. Khachariya n, S. Mita *, * , S. Dangi n, P. Bagheri n, M. Breckenridge n, R. Sengupta n, E. Kohn n
2021 article
High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN
Breckenridge, M. H., Bagheri, P., Guo, Q., Sarkar, B., Khachariya, D., Pavlidis, S., … Sitar, Z. (2021, March 15). Applied Physics Letters, Vol. 118.
Contributors: M. Breckenridge n, P. Bagheri n, Q. Guo n, B. Sarkar n, D. Khachariya n, S. Pavlidis n, J. Tweedie*, R. Kirste*
2021 article
High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing
Breckenridge, M. H., Tweedie, J., Reddy, P., Guan, Y., Bagheri, P., Szymanski, D., … Sitar, Z. (2021, January 11). Applied Physics Letters, Vol. 118, p. 022101.
Contributors: M. Breckenridge n, J. Tweedie n, n , Y. Guan n, P. Bagheri n, D. Szymanski n, S. Mita n, K. Sierakowski n
2021 article
Native oxide reconstructions on AlN and GaN (0001) surfaces
Mirrielees, K. J., Dycus, J. H., Baker, J. N., Reddy, P., Collazo, R., Sitar, Z., … Irving, D. L. (2021, May 19). Journal of Applied Physics, Vol. 5.
Contributors: K. Mirrielees n, J. Dycus n, J. Baker n, * , R. Collazo n , Z. Sitar n, J. Lebeau*, D. Irving n
2021 article
On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters
Jadhav, A., Bagheri, P., Klump, A., Khachariya, D., Mita, S., Reddy, P., … Sarkar, B. (2021, November 5). Semiconductor Science and Technology, Vol. 1.
Contributors: A. Jadhav*, P. Bagheri n, A. Klump n, D. Khachariya n, S. Mita*, * , S. Rathkanthiwar n, R. Kirste*
2021 article
On the Ge shallow-to-deep level transition in Al-rich AlGaN
Bagheri, P., Reddy, P., Mita, S., Szymanski, D., Kim, J. H., Guan, Y., … Sitar, Z. (2021, August 3). Journal of Applied Physics, Vol. 8.
Contributors: P. Bagheri n, n , S. Mita n, D. Szymanski n, J. Kim n, Y. Guan n, D. Khachariya n, A. Klump n
2021 article
On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers
Khachariya, D., Szymanski, D., Breckenridge, M. H., Reddy, P., Kohn, E., Sitar, Z., … Pavlidis, S. (2021, March 22). Applied Physics Letters, Vol. 118.
Contributors: D. Khachariya n, D. Szymanski n, M. Breckenridge n, * , E. Kohn n, Z. Sitar n, R. Collazo n , S. Pavlidis n
2021 article
Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping
Washiyama, S., Mirrielees, K. J., Bagheri, P., Baker, J. N., Kim, J.-H., Guo, Q., … Sitar, Z. (2021, January 25). Applied Physics Letters, Vol. 118.
Contributors: S. Washiyama n, K. Mirrielees n, P. Bagheri n, J. Baker n, J. Kim n, Q. Guo n, R. Kirste*, Y. Guan n
2021 article
Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength
Kirste, R., Sarkar, B., Reddy, P., Guo, Q., Collazo, R., & Sitar, Z. (2021, December 14). Journal of Materials Research/Pratt's Guide to Venture Capital Sources, Vol. 12, pp. 4638–4664.
Contributors: R. Kirste n, B. Sarkar n, n , Q. Guo n, R. Collazo n & Z. Sitar n
2021 article
Study on avalanche breakdown and Poole–Frenkel emission in Al-rich AlGaN grown on single crystal AlN
Reddy, P., Khachariya, D., Mecouch, W., Breckenridge, M. H., Bagheri, P., Guan, Y., … Sitar, Z. (2021, November 1). Applied Physics Letters, Vol. 11.
Contributors: * , D. Khachariya n, W. Mecouch *, M. Breckenridge n, P. Bagheri n, Y. Guan n, J. Kim n, S. Pavlidis n
2021 article
Systematic oxygen impurity reduction in smooth N-polar GaN by chemical potential control
Szymanski, D., Wang, K., Kaess, F., Kirste, R., Mita, S., Reddy, P., … Collazo, R. (2021, November 3). Semiconductor Science and Technology, Vol. 37.
Contributors: D. Szymanski*, K. Wang, F. Kaess*, R. Kirste*, S. Mita*, * , Z. Sitar*, R. Collazo*
2021 article
Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies
Kim, J. H., Bagheri, P., Washiyama, S., Klump, A., Kirste, R., Mita, S., … Sitar, Z. (2021, July 12). Applied Physics Letters, Vol. 7.
Contributors: J. Kim n, P. Bagheri n, S. Washiyama n, A. Klump n, R. Kirste*, S. Mita*, * , R. Collazo n , Z. Sitar n
2021 article
UV illumination effects on AlGaN/GaN HEMTs for tunable RF oscillators
Stein, S., Robbins, M., Reddy, P., Collazo, R., & Pavlidis, S. (2021, January 17). 2021 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS), pp. 168–170.
Contributors: S. Stein n, M. Robbins n, * , R. Collazo n & S. Pavlidis n
2021 article
Weak localization and dimensional crossover in compositionally graded AlxGa1−xN
Al-Tawhid, A., Shafe, A.-A., Bagheri, P., Guan, Y., Reddy, P., Mita, S., … Ahadi, K. (2021, February 22). Applied Physics Letters, Vol. 118, p. 082101.
Contributors: A. Al-Tawhid n, A. Shafe n, P. Bagheri n, Y. Guan n, * , S. Mita*, B. Moody*, R. Collazo n , Z. Sitar n, K. Ahadi n
2020 article
(Invited) A Path Toward Vertical GaN Superjunction Devices
Khachariya, D., Szymanski, D., Reddy, P., Kohn, E., Sitar, Z., Collazo, R., & Pavlidis, S. (2020, September 8). ECS Transactions, Vol. 98, pp. 69–79.
Contributors: D. Khachariya n, D. Syzmanski n, * , E. Kohn n, Z. Sitar n, R. Collazo n , S. Pavlidis n
2020 article
Chemical treatment effects on Schottky contacts to metalorganic chemical vapor deposited n-type N-polar GaN
Khachariya, D., Szymanski, D., Sengupta, R., Reddy, P., Kohn, E., Sitar, Z., … Pavlidis, S. (2020, August 11). Journal of Applied Physics, Vol. 128.
Contributors: D. Khachariya n, D. Szymanski n, R. Sengupta n, * , E. Kohn n, Z. Sitar n, R. Collazo n, S. Pavlidis n
2020 article
Control of passivation and compensation in Mg-doped GaN by defect quasi Fermi level control
Klump, A., Hoffmann, M. P., Kaess, F., Tweedie, J., Reddy, P., Kirste, R., … Collazo, R. (2020, January 22). Journal of Applied Physics, Vol. 127.
Contributors: A. Klump n, M. Hoffmann n, F. Kaess n, J. Tweedie n, n , R. Kirste n, Z. Sitar n, R. Collazo n
2020 article
High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates
Reddy, P., Breckenridge, M. H., Guo, Q., Klump, A., Khachariya, D., Pavlidis, S., … Sitar, Z. (2020, February 24). Applied Physics Letters, Vol. 116, p. 081101.
Contributors: * , M. Breckenridge n, Q. Guo n, A. Klump n, D. Khachariya n, S. Pavlidis n, W. Mecouch *, S. Mita *
2020 article
Impact of impurity-based phonon resonant scattering on thermal conductivity of single crystalline GaN
Bagheri, P., Reddy, P., Kim, J. H., Rounds, R., Sochacki, T., Kirste, R., … Sitar, Z. (2020, August 24). Applied Physics Letters, Vol. 117.
Contributors: P. Bagheri n, n , J. Kim n, R. Rounds n, T. Sochacki n, R. Kirste n, M. Bockowski n, R. Collazo n, Z. Sitar n
2020 article
Impact of the effective refractive index in AlGaN-based mid-UV laser structures on waveguiding
Guo, Q., Kirste, R., Reddy, P., Mecouch, W., Guan, Y., Mita, S., … Collazo, R. (2020, July 31). Japanese Journal of Applied Physics, Vol. 7.
Contributors: Q. Guo n, R. Kirste *, * , W. Mecouch *, Y. Guan n, S. Mita *, S. Washiyama n, J. Tweedie *, Z. Sitar n, R. Collazo n
2020 article
Modulating the Stress Response of E. coli at GaN Interfaces Using Surface Charge, Surface Chemistry, and Genetic Mutations
Gleco, S., Reddy, P., Kirste, R., Collazo, R., LaJeunesse, D., & Ivanisevic, A. (2020, September 15). ACS Applied Bio Materials, Vol. 3, pp. 7211–7218.
Contributors: S. Gleco n, * , R. Kirste*, R. Collazo n , D. Lajeunesse * & A. Ivanisevic n
2020 article
Observation of carrier concentration dependent spintronic terahertz emission from n-GaN/NiFe heterostructures
Vetter, E., Biliroglu, M., Seyitliyev, D., Reddy, P., Kirste, R., Sitar, Z., … Sun, D. (2020, August 31). Applied Physics Letters, Vol. 117.
Contributors: E. Vetter n, M. Biliroglu n, D. Seyitliyev n, * , R. Kirste *, Z. Sitar n, R. Collazo n, K. Gundogdu n, D. Sun n
2020 article
Oxidative Stress Transcriptional Responses of Escherichia coli at GaN Interfaces
Gleco, S., Noussi, T., Jude, A., Reddy, P., Kirste, R., Collazo, R., … Ivanisevic, A. (2020, December 1). ACS Applied Bio Materials, Vol. 3, pp. 9073–9081.
Contributors: S. Gleco n, T. Noussi*, A. Jude*, * , R. Kirste *, R. Collazo n, D. Lajeunesse *, A. Ivanisevic n
2020 article
Pinning of energy transitions of defects, complexes, and surface states in AlGaN alloys
Reddy, P., Bryan, Z., Bryan, I., Kim, J. H., Washiyama, S., Kirste, R., … Collazo, R. (2020, January 21). Applied Physics Letters, Vol. 116.
Contributors: n , Z. Bryan n, I. Bryan n, J. Kim n, S. Washiyama n, R. Kirste n, S. Mita n, J. Tweedie n
2020 article
Role of polarity in SiN on Al/GaN and the pathway to stable contacts
Reddy, P., Khachariya, D., Szymanski, D., Breckenridge, M. H., Sarkar, B., Pavlidis, S., … Kohn, E. (2020, February 18). Semiconductor Science and Technology, Vol. 35, p. 055007.
Contributors: * , D. Khachariya n, D. Szymanski n, M. Breckenridge n, B. Sarkar n, S. Pavlidis n, R. Collazo n , Z. Sitar n, E. Kohn n
2020 article
Shallow Si donor in ion-implanted homoepitaxial AlN
Breckenridge, M. H., Guo, Q., Klump, A., Sarkar, B., Guan, Y., Tweedie, J., … Sitar, Z. (2020, April 27). Applied Physics Letters, Vol. 116, p. 172103.
Contributors: M. Breckenridge n, Q. Guo n, A. Klump n, B. Sarkar n, Y. Guan n, J. Tweedie n, R. Kirste n, S. Mita n
2020 article
The 2020 UV emitter roadmap
Amano, H., Collazo, R., Santi, C. D., Einfeldt, S., Funato, M., Glaab, J., … Zhang, Y. (2020, July 15). Journal of Physics D Applied Physics, Vol. 53.
Contributors: H. Amano *, R. Collazo n , C. De Santi *, S. Einfeldt *, M. Funato *, J. Glaab *, S. Hagedorn *, A. Hirano
2020 article
The nature of the DX state in Ge-doped AlGaN
Bagheri, P., Kirste, R., Reddy, P., Washiyama, S., Mita, S., Sarkar, B., … Sitar, Z. (2020, June 1). Applied Physics Letters.
2020 article
The role of chemical potential in compensation control in Si:AlGaN
Washiyama, S., Reddy, P., Sarkar, B., Breckenridge, M. H., Guo, Q., Bagheri, P., … Collazo, R. (2020, March 9). Journal of Applied Physics, Vol. 127.
Contributors: S. Washiyama n, * , B. Sarkar n, M. Breckenridge n, Q. Guo n, P. Bagheri n, A. Klump n, R. Kirste
2019 article
Al Rich AlGaN Based APDs on Single Crystal AlN with Solar Blindness and Room Temperature Operation
Reddy, P., Collazo, R., Sitar, Z., Breckenridge, M. H., Klump, A., Guo, Q., … Tweedie, J. (2019, August 1). 2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID).
Contributors: * , M. Breckenridge n, A. Klump n, Q. Guo n, S. Mita *, B. Sarkar n, R. Kirste *, B. Moody *
2019 article
Behavior of E. coli with Variable Surface Morphology Changes on Charged Semiconductor Interfaces
Iyer, D., Gulyuk, A. V., Reddy, P., Kirste, R., Collazo, R., LaJeunesse, D. R., & Ivanisevic, A. (2019, August 13). ACS Applied Bio Materials, Vol. 2, pp. 4044–4051.
Contributors: D. Iyer*, A. Gulyuk n, * , R. Kirste *, R. Collazo n, D. Lajeunesse *, A. Ivanisevic n
2019 article
Design of AlGaN-based quantum structures for low threshold UVC lasers
Guo, Q., Kirste, R., Mita, S., Tweedie, J., Reddy, P., Moody, B., … Collazo, R. (2019, December 9). Journal of Applied Physics, Vol. 126.
Contributors: Q. Guo n, R. Kirste *, S. Mita *, J. Tweedie *, * , B. Moody *, Y. Guan n, S. Washiyama n
2019 article
Development of Near UV Laser Diodes
Kirste, R., Mita, S., Reddy, P., Franke, A., Guo, Q., Wang, K., … Sitar, Z. (2019, August 1). 2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID).
Contributors: R. Kirste *, S. Mita *, * , A. Franke*, Q. Guo *, K. Wang *, R. Collazo *, Z. Sitar *
2019 article
Interfacial Properties of Doped Semiconductor Materials Can Alter the Behavior of Pseudomonas aeruginosa Films
Gulyuk, A. V., LaJeunesse, D. R., Reddy, P., Kirste, R., Collazo, R., & Ivanisevic, A. (2019, July 30). ACS Applied Electronic Materials, Vol. 1, pp. 1641–1652.
Contributors: A. Gulyuk n, D. Lajeunesse *, * , R. Kirste *, R. Collazo n & A. Ivanisevic n
2019 article
Modified approach to modeling barrier inhomogeneity in Schottky diodes
Reddy, P., & Kumar, J. (2019, January 9). Semiconductor Science and Technology, Vol. 1.
Contributors: * & J. Kumar *
2019 article
Quantum Well-Width Dependence Study on AlGaN Based UVC Laser
Guo, Q., Kirste, R., Reddy, P., Mita, S., Guan, Y., Collazo, R., & Sitar, Z. (2019, August 1). 2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID).
Contributors: Q. Guo n, R. Kirste *, * , S. Mita *, Y. Guan n, R. Collazo n, Z. Sitar n
2019 article
Temperature-dependent Schottky barrier parameters of Ni/Au on n-type (001) β-Ga2O3 Schottky barrier diode
Reddy, P. R. S., Janardhanam, V., Shim, K.-H., Reddy, V. R., Lee, S.-N., Park, S.-J., & Choi, C.-J. (2019, October 18). Vacuum, Vol. 171.
Contributors: * , V. Janardhanam *, K. Shim *, V. Reddy *, S. Lee *, S. Park, C. Choi *
2019 article
The polarization field in Al-rich AlGaN multiple quantum wells
Guo, Q., Kirste, R., Mita, S., Tweedie, J., Reddy, P., Washiyama, S., … Sitar, Z. (2019, May 9). Japanese Journal of Applied Physics, Vol. 58.
Contributors: Q. Guo n, R. Kirste n, S. Mita n, J. Tweedie n, n , S. Washiyama n, M. Breckenridge n, R. Collazo n , Z. Sitar n
2018 article
6 kW/cm2 UVC laser threshold in optically pumped lasers achieved by controlling point defect formation
Kirste, R., Guo, Q., Dycus, J. H., Franke, A., Mita, S., Sarkar, B., … Sitar, Z. (2018, July 27). Applied Physics Express, Vol. 11.
Contributors: R. Kirste n, Q. Guo n, J. Dycus n, A. Franke n, S. Mita n, B. Sarkar n, n , J. LeBeau n, R. Collazo n, Z. Sitar n
2018 article
A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition
Washiyama, S., Reddy, P., Kaess, F., Kirste, R., Mita, S., Collazo, R., & Sitar, Z. (2018, September 18). Journal of Applied Physics, Vol. 124.
Contributors: S. Washiyama n, * , F. Kaess n, R. Kirste*, S. Mita*, R. Collazo n , Z. Sitar n
2018 article
Au:Ga Alloyed Clusters to Enhance Al Contacts to P-type GaN
Klump, A., Kaess, F., Sarkar, B., Kirste, R., Collazo, R., Reddy, P., … Kohn, E. (2018, August 1). 2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID), pp. 23–26.
Contributors: A. Klump n, F. Kaess n, B. Sarkar, R. Kirste n, R. Collazo n, * , S. Mita, Z. Sitar n, M. Breckenridge n, E. Kohn n
2018 journal article
Bioelectronics communication: encoding yeast regulatory responses using nanostructured gallium nitride thin films
Nanoscale, 10(24), 11506–11516.
Contributors: P. Snyder n, D. Lajeunesse *, * , R. Kirste *, R. Collazo n & A. Ivanisevic n
2018 article
Bulk and Surface Electronic Properties of Inorganic Materials: Tools to Guide Cellular Behavior
Snyder, P. J., Reddy, P., Kirste, R., Collazo, R., & Ivanisevic, A. (2018, July 20). Small Methods, Vol. 2.
Contributors: P. Snyder n, * , R. Kirste*, R. Collazo n & A. Ivanisevic n
2018 article
Design Challenges for Mid-UV Laser Diodes
Guo, Q., Kirste, R., Reddy, P., Mita, S., Collazo, R., & Sitar, Z. (2018, August 1). 2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID), pp. 131–134.
Contributors: Q. Guo n, R. Kirste *, * , S. Mita *, R. Collazo n & Z. Sitar n
2018 article
Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD
Bryan, I., Bryan, Z., Washiyama, S., Reddy, P., Gaddy, B., Sarkar, B., … Sitar, Z. (2018, February 5). Applied Physics Letters, Vol. 112, p. 062102.
Contributors: I. Bryan n, Z. Bryan n, S. Washiyama n, * , B. Gaddy n, B. Sarkar n, M. Breckenridge n, Q. Guo n
2018 article
Effect of copper phthalocyanine thickness on surface morphology, optical and electrical properties of Au/CuPc/n-Si heterojunction
Reddy, P. R. S., Janardhanam, V., Jyothi, I., Harsha, C. S., Reddy, V. R., Lee, S.-N., … Choi, C.-J. (2018, January 11). Applied Physics A, Vol. 124.
Contributors: * , V. Janardhanam *, I. Jyothi*, C. Harsha, V. Reddy *, S. Lee *, J. Won *, C. Choi *
2018 article
Electrical and Structural Characterization of Si Implanted Homoepitaxially Grown AlN
Breckenridge, M. H., Tweedie, J., Hernandez-Balderrama, L., Kirste, R., Klump, A., Collazo, R., … Sitar, Z. (2018, August 1). 2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID), pp. 27–30.
Contributors: M. Breckenridge n, J. Tweedie n, L. Hernandez-Balderrama n, R. Kirste n, A. Klump n, R. Collazo n, n , Z. Sitar n
2018 article
Improving the Conductivity Limits in Si Doped Al Rich AlGaN
Reddy, P., Guo, Q., Tweedie, J., Washiyama, S., Kaess, F., Mita, S., … Sitar, Z. (2018, August 1). 2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID), pp. 87–90.
Contributors: * , Q. Guo n, J. Tweedie n, S. Washiyama n, F. Kaess n, S. Mita n, M. Breckenridge *, R. Kirste n
2018 article
N- and P- type Doping in Al-rich AlGaN and AlN
Sarkar, B., Washiyama, S., Breckenridge, M. H., Klump, A., Baker, J. N., Reddy, P., … Sitar, Z. (2018, July 23). ECS Transactions, Vol. 86, pp. 25–30.
Contributors: B. Sarkar n, S. Washiyama n, M. Breckenridge n, A. Klump n, J. Baker n, * , J. Tweedie *, S. Mita *
2018 journal article
Noninvasive Stimulation of Neurotypic Cells Using Persistent Photoconductivity of Gallium Nitride
ACS Omega, 3(1), 615–621.
Contributors: P. Snyder n, * , R. Kirste *, D. Lajeunesse *, R. Collazo n & A. Ivanisevic n
2018 article
On compensation in Si-doped AlN
Harris, J. S., Baker, J. N., Gaddy, B. E., Bryan, I., Bryan, Z., Mirrielees, K. J., … Irving, D. L. (2018, April 9). Applied Physics Letters, Vol. 112.
Contributors: J. Harris n, J. Baker n, B. Gaddy n, I. Bryan n, Z. Bryan n, K. Mirrielees n, * , R. Collazo n , Z. Sitar n, D. Irving n
2018 article
On contacts to III-nitride deep-UV emitters
Sarkar, B., Reddy, P., Klump, A., Rounds, R., Breckenridge, M. R., Haidet, B. B., … Sitar, Z. (2018, February 1). 2018 3rd International Conference on Microwave and Photonics (ICMAP), pp. 1–2.
Contributors: B. Sarkar n, * , A. Klump n, R. Rounds n, M. Breckenridge n, B. Haidet n, S. Mita, R. Kirste, R. Collazo n , Z. Sitar n
2018 article
Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition
Reddy, P., Washiyama, S., Mecouch, W., Hernandez-Balderrama, L. H., Kaess, F., Breckenridge, M. H., … Sitar, Z. (2018, November 1). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Vol. 36.
Contributors: n , S. Washiyama n, W. Mecouch n, L. Hernandez-Balderrama n, F. Kaess n, M. Breckenridge n, B. Sarkar n, B. Haidet n
2018 article
Point-Defect Nature of the Ultraviolet Absorption Band in AlN
Alden, D., Harris, J. S., Bryan, Z., Baker, J. N., Reddy, P., Mita, S., … Sitar, Z. (2018, May 24). Physical Review Applied, Vol. 9.
Contributors: D. Alden n, J. Harris n, Z. Bryan n, J. Baker n, n , S. Mita *, G. Callsen *, A. Hoffmann *
2018 article
Variably doped nanostructured gallium nitride surfaces can serve as biointerfaces for neurotypic PC12 cells and alter their behavior
Snyder, P. J., Reddy, P., Kirste, R., LaJeunesse, D. R., Collazo, R., & Ivanisevic, A. (2018, January 1). RSC Advances, Vol. 8, pp. 36722–36730.
Contributors: P. Snyder n, * , R. Kirste*, D. LaJeunesse *, R. Collazo n & A. Ivanisevic n
2017 article
(Invited) Material Considerations for the Development of III-Nitride Power Devices
Sarkar, B., Reddy, P., Kaess, F., Haidet, B. B., Tweedie, J., Mita, S., … al. (2017, August 17). ECS Transactions, Vol. 80, pp. 29–36.
Contributors: B. Sarkar n, n , F. Kaess n, B. Haidet n, J. Tweedie*, S. Mita*, R. Kirste*, E. Kohn n, R. Collazo n , Z. Sitar n
2017 article
Defect quasi Fermi level control-based CN reduction in GaN: Evidence for the role of minority carriers
Reddy, P., Kaess, F., Tweedie, J., Kirste, R., Mita, S., Collazo, R., & Sitar, Z. (2017, October 9). Applied Physics Letters, Vol. 111, p. 152101.
Contributors: n , F. Kaess n, J. Tweedie*, R. Kirste*, S. Mita*, R. Collazo n , Z. Sitar n
2017 article
Defect-free Ni/GaN Schottky barrier behavior with high temperature stability
Reddy, P., Sarkar, B., Kaess, F., Gerhold, M., Kohn, E., Collazo, R., & Sitar, Z. (2017, January 2). Applied Physics Letters, Vol. 110, p. 011603.
Contributors: n , B. Sarkar n, F. Kaess n, M. Gerhold*, E. Kohn n, R. Collazo n , Z. Sitar n
2017 article
High free carrier concentration in p-GaN grown on AlN substrates
Sarkar, B., Mita, S., Reddy, P., Klump, A., Kaess, F., Tweedie, J., … Sitar, Z. (2017, July 17). Applied Physics Letters, Vol. 111, p. 032109.
2017 article
Microstructural and electrical properties of Al/n-type Si Schottky diodes with Au-CuPc nanocomposite films as interlayer
Reddy, P. R. S., Janardhanam, V., Jyothi, I., Chang, H.-S., Lee, S.-N., Lee, M. S., … Choi, C.-J. (2017, July 3). Superlattices and Microstructures, Vol. 111, pp. 506–517.
Contributors: * , V. Janardhanam *, I. Jyothi*, H. Chang*, S. Lee *, M. Lee*, V. Reddy *, C. Choi *
2017 article
Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN
Haidet, B. B., Sarkar, B., Reddy, P., Bryan, I., Bryan, Z., Kirste, R., … Sitar, Z. (2017, September 5). Japanese Journal of Applied Physics, Vol. 56, p. 100302.
Contributors: B. Haidet n, B. Sarkar n, n , I. Bryan n, Z. Bryan n, R. Kirste *, R. Collazo n , Z. Sitar n
2017 journal article
On Ni/Au Alloyed Contacts to Mg-Doped GaN
Journal of Electronic Materials, 47(1), 305–311.
Contributors: B. Sarkar n, n , A. Klump n, F. Kaess n, R. Rounds n, R. Kirste n, S. Mita n, E. Kohn n, R. Collazo n , Z. Sitar n
2017 article
Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatment
Sarkar, B., Haidet, B. B., Reddy, P., Kirste, R., Collazo, R., & Sitar, Z. (2017, June 6). Applied Physics Express, Vol. 10, p. 071001.
Contributors: B. Sarkar n, B. Haidet n, n , R. Kirste n, R. Collazo n & Z. Sitar n
2017 article
Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN
Reddy, P., Washiyama, S., Kaess, F., Kirste, R., Mita, S., Collazo, R., & Sitar, Z. (2017, December 27). Journal of Applied Physics, Vol. 122, p. 245702.
Contributors: n , S. Washiyama n, F. Kaess n, R. Kirste n, S. Mita n, R. Collazo n , Z. Sitar n
2016 thesis
A Study of Surfaces, Interfaces and Point Defect Control in III-Nitrides
2016 article
Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition
Kaess, F., Mita, S., Xie, J., Reddy, P., Klump, A., Hernandez-Balderrama, L. H., … Sitar, Z. (2016, September 8). Journal of Applied Physics, Vol. 120, p. 105701.
Contributors: F. Kaess n, S. Mita n, J. Xie n, n , A. Klump n, L. Hernandez-Balderrama n, S. Washiyama n, A. Franke n
2016 article
Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications
Alden, D., Guo, W., Kirste, R., Kaess, F., Bryan, I., Troha, T., … Sitar, Z. (2016, June 27). Applied Physics Letters, Vol. 108, p. 261106.
Contributors: D. Alden n, W. Guo n, R. Kirste n, F. Kaess n, I. Bryan n, T. Troha n, A. Bagal n, n
2016 article
High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies
Reddy, P., Washiyama, S., Kaess, F., Breckenridge, M. H., Hernandez-Balderrama, L. H., Haidet, B. B., … Sitar, Z. (2016, April 11). Journal of Applied Physics, Vol. 119, p. 145702.
Contributors: n , S. Washiyama n, F. Kaess n, M. Breckenridge n, L. Hernandez-Balderrama n, B. Haidet n, D. Alden n, A. Franke n
2016 article
Microstructural, electrical and carrier transport properties of Au/NiO/n-GaN heterojunction with a nickel oxide interlayer
Reddy, V. R., Reddy, P. R. S., Reddy, I. N., & Choi, C.-J. (2016, January 1). RSC Advances, Vol. 6, pp. 105761–105770.
Contributors: V. Reddy *, * , I. Reddy * & C. Choi *
2016 article
Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control
Reddy, P., Hoffmann, M. P., Kaess, F., Bryan, Z., Bryan, I., Bobea, M., … Sitar, Z. (2016, November 14). Journal of Applied Physics, Vol. 120, p. 185704.
Contributors: n , M. Hoffmann n, F. Kaess n, Z. Bryan n, I. Bryan n, M. Bobea n, A. Klump n, J. Tweedie n
2016 article
The effect of illumination power density on carbon defect configuration in silicon doped GaN
Kaess, F., Reddy, P., Alden, D., Klump, A., Hernandez-Balderrama, L. H., Franke, A., … al. (2016, December 19). Journal of Applied Physics, Vol. 120, p. 235705.
Contributors: F. Kaess n, n , D. Alden n, A. Klump n, L. Hernandez-Balderrama n, A. Franke n, R. Kirste *, A. Hoffmann *, R. Collazo n , Z. Sitar n
2015 article
A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN
Haidet, B. B., Bryan, I., Reddy, P., Bryan, Z., Collazo, R., & Sitar, Z. (2015, June 26). Journal of Applied Physics, Vol. 117, p. 245702.
Contributors: B. Haidet n, I. Bryan n, n , Z. Bryan n, R. Collazo n & Z. Sitar n
2015 article
Charge neutrality levels, barrier heights, and band offsets at polar AlGaN
Reddy, P., Bryan, I., Bryan, Z., Tweedie, J., Washiyama, S., Kirste, R., … Sitar, Z. (2015, August 31). Applied Physics Letters, Vol. 107, p. 091603.
Contributors: n , I. Bryan n, Z. Bryan n, J. Tweedie, S. Washiyama n, R. Kirste n, S. Mita *, R. Collazo n , Z. Sitar n
2015 article
KOH based selective wet chemical etching of AlN, AlxGa1−xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode
Guo, W., Kirste, R., Bryan, I., Bryan, Z., Hussey, L., Reddy, P., … Sitar, Z. (2015, February 23). Applied Physics Letters, Vol. 106, p. 082110.
2014 article
Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN
Bryan, Z., Bryan, I., Gaddy, B. E., Reddy, P., Hussey, L., Bobea, M., … Collazo, R. (2014, December 1). Applied Physics Letters, Vol. 105, p. 222101.
2014 article
Schottky contact formation on polar and non-polar AlN
Reddy, P., Bryan, I., Bryan, Z., Tweedie, J., Kirste, R., Collazo, R., & Sitar, Z. (2014, November 18). Journal of Applied Physics, Vol. 116, p. 194503.
Contributors: n , I. Bryan n, Z. Bryan n, J. Tweedie n, R. Kirste n, R. Collazo n , Z. Sitar n
2014 article
The effect of polarity and surface states on the Fermi level at III-nitride surfaces
Reddy, P., Bryan, I., Bryan, Z., Guo, W., Hussey, L., Collazo, R., & Sitar, Z. (2014, September 22). Journal of Applied Physics, Vol. 116.
2014 journal article
The effect of polarity and surface states on the Fermi level at III-nitride surfaces
Journal of Applied Physics, 116(12), -.
2012 article
Isotherm behavior studies of silica nanoparticles: Role of surfactant concentration and particle size
Devi, P., Reddy, P., Singh, S., Singla, M. L., Ghanshyam, C., Kapur, A. K. P. P., & Vishal, N. (2012, March 1). Proceedings - ISPTS-1, 1st International Symposium on Physics and Technology of Sensors, pp. 79–82.
Contributors: P. Devi*, * , S. Singh *, M. Singla*, C. Ghanshyam*, A. Paul Pawan Kapur *, Vishal
2012 article
Optical and I-V studies on Au-ZnO-ITO based UV-sensing devices
Reddy, P. R., Kashyap, S., Mishra, S., Paul, A., & Kapur, P. (2012, October 15). Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE.
2012 article
Sensing behavior study of silica-coated Ag nanoparticles deposited on glassy carbon toward nitrobenzene
Devi, P., Reddy, P., Arora, S., Singh, S., Ghanshyam, C., & Singla, M. L. (2012, September 12). Journal of Nanoparticle Research, Vol. 14.
Contributors: P. Devi*, * , S. Arora *, S. Singh *, C. Ghanshyam* & M. Singla*
2012 article
Synthesis and Optical Characterization of ZnO Quantum Dots and Nanorods
Reddy, J. P., Kashyap, S., & Paul, A. K. (2012, June 1). Advanced Science Engineering and Medicine.
2012 article
Synthesis and electrical behavior study of Mn3O4 nanoceramic powder for low temperature NTC thermistor
Kohli, P. S., Devi, P., Reddy, P., Raina, K. K., & Singla, M. L. (2012, March 20). Journal of Materials Science Materials in Electronics, Vol. 23, pp. 1891–1897.
Contributors: P. Kohli *, P. Devi*, * , K. Raina & M. Singla*
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