Works (36)

2019 journal article

Behavior of E. coli with Variable Surface Morphology Changes on Charged Semiconductor Interfaces

ACS Applied Bio Materials, 8.

By: D. Iyer, A. Gulyuk, P. Reddy, R. Kirste, R. Collazo, D. LaJeunesse, A. Ivanisevic

Source: ORCID
Added: August 24, 2019

2019 journal article

Interfacial Properties of Doped Semiconductor Materials Can Alter the Behavior of Pseudomonas aeruginosa Films

ACS Applied Electronic Materials, 8.

By: A. Gulyuk, D. LaJeunesse, P. Reddy, R. Kirste, R. Collazo & A. Ivanisevic

Source: ORCID
Added: August 9, 2019

2019 journal article

Modified approach to modeling barrier inhomogeneity in Schottky diodes

Semiconductor Science and Technology, 1.

By: P. Reddy & J. Kumar

Source: ORCID
Added: January 23, 2019

2019 article

The polarization field in Al-rich AlGaN multiple quantum wells

JAPANESE JOURNAL OF APPLIED PHYSICS.

By: Q. Guo, R. Kirste, S. Mita, J. Tweedie, P. Reddy, S. Washiyama, M. Breckenridge, R. Collazo, Z. Sitar

Sources: Web Of Science, ORCID
Added: July 29, 2019

2018 journal article

A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition

Journal of Applied Physics, 124(11).

By: S. Washiyama, P. Reddy, F. Kaess, R. Kirste, S. Mita, R. Collazo, Z. Sitar

Sources: NC State University Libraries, ORCID
Added: October 16, 2018

2018 journal article

Bioelectronics communication: encoding yeast regulatory responses using nanostructured gallium nitride thin films

Nanoscale, 10(24), 11506–11516.

By: P. Snyder, D. Lajeunesse, P. Reddy, R. Kirste, R. Collazo & A. Ivanisevic

Source: ORCID
Added: January 23, 2019

2018 journal article

Bulk and Surface Electronic Properties of Inorganic Materials: Tools to Guide Cellular Behavior

SMALL METHODS, 2(9).

By: P. Snyder, P. Reddy, R. Kirste, R. Collazo & A. Ivanisevic

Sources: NC State University Libraries, ORCID
Added: October 16, 2018

2018 journal article

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

Applied Physics Letters, 112(6), 062102.

By: I. Bryan, Z. Bryan, S. Washiyama, P. Reddy, B. Gaddy, B. Sarkar, M. Breckenridge, Q. Guo ...

Source: ORCID
Added: January 23, 2019

2018 journal article

Noninvasive Stimulation of Neurotypic Cells Using Persistent Photoconductivity of Gallium Nitride

ACS Omega.

By: P. Snyder, P. Reddy, R. Kirste, D. LaJeunesse, R. Collazo & A. Ivanisevic

Source: ORCID
Added: January 23, 2019

2018 journal article

On compensation in Si-doped AlN

Applied Physics Letters.

By: J. Harris, J. Baker, B. Gaddy, I. Bryan, Z. Bryan, K. Mirrielees, P. Reddy, R. Collazo, Z. Sitar, D. Irving

Source: ORCID
Added: January 23, 2019

2018 journal article

Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(6).

By: P. Reddy, S. Washiyama, W. Mecouch, L. Hernandez-Balderrama, F. Kaess, M. Breckenridge, B. Sarkar, B. Haidet ...

Sources: NC State University Libraries, ORCID
Added: December 10, 2018

2018 journal article

Point-Defect Nature of the Ultraviolet Absorption Band in AlN

Physical Review Applied, 9(5).

By: D. Alden, J. Harris, Z. Bryan, J. Baker, P. Reddy, S. Mita, G. Callsen, A. Hoffmann ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2018 journal article

Variably doped nanostructured gallium nitride surfaces can serve as biointerfaces for neurotypic PC12 cells and alter their behavior

RSC ADVANCES, 8(64), 36722–36730.

By: P. Snyder, P. Reddy, R. Kirste, D. LaJeunesse, R. Collazo & A. Ivanisevic

Sources: NC State University Libraries, ORCID
Added: November 26, 2018

2017 journal article

Defect quasi Fermi level control-based CN reduction in GaN: Evidence for the role of minority carriers

Applied Physics Letters, 111(15), 152101.

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2017 journal article

Defect-free Ni/GaN Schottky barrier behavior with high temperature stability

Applied Physics Letters, 110(1), 011603.

By: P. Reddy, B. Sarkar, F. Kaess, M. Gerhold, E. Kohn, R. Collazo, Z. Sitar

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2017 journal article

High free carrier concentration in p-GaN grown on AlN substrates

Applied Physics Letters, 111(3), 032109.

By: B. Sarkar, S. Mita, P. Reddy, A. Klump, F. Kaess, J. Tweedie, I. Bryan, Z. Bryan ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2017 conference paper

Material considerations for the development of III-nitride power devices

In ECS Transactions (Vol. 80, pp. 29–36).

By: B. Sarkar, P. Reddy, F. Kaess, B. Haidet, J. Tweedie, S. Mita, R. Kirste, E. Kohn ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2017 journal article

Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN

Japanese Journal of Applied Physics, 56(10), 100302.

By: B. Haidet, B. Sarkar, P. Reddy, I. Bryan, Z. Bryan, R. Kirste, R. Collazo, Z. Sitar

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2017 journal article

On Ni/Au Alloyed Contacts to Mg-Doped GaN

Journal of Electronic Materials, 9.

By: B. Sarkar, P. Reddy, A. Klump, F. Kaess, R. Rounds, R. Kirste, S. Mita, E. Kohn, R. Collazo, Z. Sitar

Source: ORCID
Added: January 23, 2019

2017 journal article

Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatment

Applied Physics Express, 10(7), 071001.

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2017 journal article

Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN

Journal of Applied Physics, 122(24), 245702.

By: P. Reddy, S. Washiyama, F. Kaess, R. Kirste, S. Mita, R. Collazo, Z. Sitar

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2016 journal article

Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition

Journal of Applied Physics, 120(10), 105701.

By: F. Kaess, S. Mita, J. Xie, P. Reddy, A. Klump, L. Hernandez-Balderrama, S. Washiyama, A. Franke ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2016 journal article

Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications

Applied Physics Letters, 108(26), 261106.

By: D. Alden, W. Guo, R. Kirste, F. Kaess, I. Bryan, T. Troha, A. Bagal, P. Reddy ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2016 journal article

High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

Journal of Applied Physics, 119(14), 145702.

By: P. Reddy, S. Washiyama, F. Kaess, M. Breckenridge, L. Hernandez-Balderrama, B. Haidet, D. Alden, A. Franke ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2016 journal article

Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control

Journal of Applied Physics, 120(18), 185704.

By: P. Reddy, M. Hoffmann, F. Kaess, Z. Bryan, I. Bryan, M. Bobea, A. Klump, J. Tweedie ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2016 journal article

The effect of illumination power density on carbon defect configuration in silicon doped GaN

Journal of Applied Physics, 120(23), 235705.

By: F. Kaess, P. Reddy, D. Alden, A. Klump, L. Hernandez-Balderrama, A. Franke, R. Kirste, A. Hoffmann ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2015 journal article

A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN

Journal of Applied Physics, 117(24), 245702.

By: B. Haidet, I. Bryan, P. Reddy, Z. Bryan, R. Collazo & Z. Sitar

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2015 journal article

Charge neutrality levels, barrier heights, and band offsets at polar AlGaN

Applied Physics Letters, 107(9), 091603.

By: P. Reddy, I. Bryan, Z. Bryan, J. Tweedie, S. Washiyama, R. Kirste, S. Mita, R. Collazo, Z. Sitar

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2015 journal article

KOH based selective wet chemical etching of AlN, AlxGa1−xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode

Applied Physics Letters, 106(8), 082110.

By: W. Guo, R. Kirste, I. Bryan, Z. Bryan, L. Hussey, P. Reddy, J. Tweedie, R. Collazo, Z. Sitar

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2014 journal article

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

Applied Physics Letters, 105(22), 222101.

By: Z. Bryan, I. Bryan, B. Gaddy, P. Reddy, L. Hussey, M. Bobea, W. Guo, M. Hoffmann ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2014 journal article

Schottky contact formation on polar and non-polar AlN

Journal of Applied Physics, 116(19), 194503.

By: P. Reddy, I. Bryan, Z. Bryan, J. Tweedie, R. Kirste, R. Collazo, Z. Sitar

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2014 journal article

The effect of polarity and surface states on the Fermi level at III-nitride surfaces

Journal of Applied Physics, 116(12).

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2014 journal article

The effect of polarity and surface states on the Fermi level at III-nitride surfaces

Journal of Applied Physics, 116(12), -.

By: P. Reddy, I. Bryan, Z. Bryan, W. Guo, L. Hussey, R. Collazo, Z. Sitar

Source: ORCID
Added: January 23, 2019

2012 conference paper

Isotherm behavior studies of silica nanoparticles: Role of surfactant concentration and particle size

In Proceedings - ISPTS-1, 1st International Symposium on Physics and Technology of Sensors (pp. 79–82).

By: P. Devi, P. Reddy, S. Singh, M. Singla, C. Ghanshyam & A. Paul Pawan Kapur

Source: ORCID
Added: January 23, 2019

2012 journal article

Sensing behavior study of silica-coated Ag nanoparticles deposited on glassy carbon toward nitrobenzene

Journal of Nanoparticle Research.

By: P. Reddy

Source: ORCID
Added: January 23, 2019

2012 journal article

Synthesis and electrical behavior study of Mn3O4nanoceramic powder for low temperature NTC thermistor

Journal of Materials Science: Materials in Electronics, 23(10), 1891–1897.

By: P. Kohli, P. Devi, P. Reddy, K. Raina & M. Singla

Source: ORCID
Added: January 23, 2019

Employment

2016 - present

Adroit Materials inc. Cary, North Carolina, US
Research Scientist III-Nitride Technology

2013 - 2016

North Carolina State University Raleigh, NC, US
Research Assistant Materials Science and Engineering

2010 - 2012

Central Scientific Instruments Organisation CSIR Chandigarh, Punjab, IN
Scientist

Education

2012 - 2016

North Carolina State University Raleigh, NC, US
PhD Materials Science and Engineering

2008 - 2010

Indian Institute of Technology Kanpur Kanpur, Uttar Pradesh, IN
M.Tech Materials Science