Pramod Reddy

The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN

APPLIED PHYSICS LETTERS, 120(3).

Doping and compensation in heavily Mg doped Al-rich AlGaN films

APPLIED PHYSICS LETTERS, 120(8).

Effects of temperature and oxygen partial pressure on electrical conductivity of Fe-doped β-Ga2O3 single crystals

Applied Physics Letters, 120(18).

GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions

JOURNAL OF APPLIED PHYSICS, 131(1).

High electron mobility in AlN:Si by point and extended defect management

JOURNAL OF APPLIED PHYSICS, 132(18).

Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3.

Low resistivity, p-type, N-Polar GaN achieved by chemical potential control

APPLIED PHYSICS EXPRESS, 15(8).

On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).

Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices

APPLIED PHYSICS EXPRESS, 15(5).

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS, 120(17).

Spintronic Terahertz Emission in Ultrawide Bandgap Semiconductor/Ferromagnet Heterostructures

Comstock, A., Biliroglu, M., Seyitliyev, D., McConnell, A., Vetter, E., Reddy, P., … Sun, D. (2022, October 31). ADVANCED OPTICAL MATERIALS, Vol. 10.

Tracking of Point Defects in the Full Compositional Range of AlGaN via Photoluminescence Spectroscopy

Hyun Kim, J., Bagheri, P., Kirste, R., Reddy, P., Collazo, R., & Sitar, Z. (2022, December 9). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 12.

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

APPLIED PHYSICS EXPRESS, 15(10).

A pathway to highly conducting Ge-doped AlGaN

JOURNAL OF APPLIED PHYSICS, 130(20).

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

APPLIED PHYSICS LETTERS, 118(2), 022101.

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

APPLIED PHYSICS LETTERS, 118(11).

Native oxide reconstructions on AlN and GaN (0001) surfaces

JOURNAL OF APPLIED PHYSICS, 129(19).

On the Ge shallow-to-deep level transition in Al-rich AlGaN

JOURNAL OF APPLIED PHYSICS, 130(5).

On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers

APPLIED PHYSICS LETTERS, 118(12).

Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

APPLIED PHYSICS LETTERS, 118(4).

Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength

Kirste, R., Sarkar, B., Reddy, P., Guo, Q., Collazo, R., & Sitar, Z. (2021, December 15). JOURNAL OF MATERIALS RESEARCH, Vol. 12.

Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN

APPLIED PHYSICS LETTERS, 119(18).

Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies

APPLIED PHYSICS LETTERS, 119(2).

UV illumination effects on AlGaN/GaN HEMTs for tunable RF oscillators

2021 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS), pp. 168–170.

Weak localization and dimensional crossover in compositionally graded AlxGa1-xN

APPLIED PHYSICS LETTERS, 118(8), 082101.

Chemical treatment effects on Schottky contacts to metalorganic chemical vapor deposited n-type N-polar GaN

Journal of Applied Physics.

Control of passivation and compensation in Mg-doped GaN by defect quasi Fermi level control

Journal of Applied Physics.

High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates

Applied Physics Letters, 116(8), 081101.

Impact of impurity-based phonon resonant scattering on thermal conductivity of single crystalline GaN

Applied Physics Letters.

Impact of the effective refractive index in AlGaN-based mid-UV laser structures on waveguiding

Japanese Journal of Applied Physics, 7.

Modulating the Stress Response of E. coli at GaN Interfaces Using Surface Charge, Surface Chemistry, and Genetic Mutations

ACS APPLIED BIO MATERIALS, 3(10), 7211–7218.

Observation of carrier concentration dependent spintronic terahertz emission from n-GaN/NiFe heterostructures

Applied Physics Letters.

Oxidative Stress Transcriptional Responses of Escherichia coli at GaN Interfaces

ACS Applied Bio Materials, 3(12), 9073–9081.

Pinning of energy transitions of defects, complexes, and surface states in AlGaN alloys

Applied Physics Letters.

Role of polarity in SiN on Al/GaN and the pathway to stable contacts

Semiconductor Science and Technology, 2(5), 055007.

Shallow Si donor in ion-implanted homoepitaxial AlN

Applied Physics Letters, 116(17), 172103.

The 2020 UV emitter roadmap

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 53(50).

The nature of the DX state in Ge-doped AlGaN

Applied Physics Letters.

The role of chemical potential in compensation control in Si:AlGaN

Journal of Applied Physics.

Al Rich AlGaN Based APDs on Single Crystal AlN with Solar Blindness and Room Temperature Operation

2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID).

Behavior of E. coli with Variable Surface Morphology Changes on Charged Semiconductor Interfaces

ACS Applied Bio Materials, 2(9), 4044–4051.

Design of AlGaN-based quantum structures for low threshold UVC lasers

Journal of Applied Physics.

Development of Near UV Laser Diodes

2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID).

Interfacial Properties of Doped Semiconductor Materials Can Alter the Behavior of Pseudomonas aeruginosa Films

ACS Applied Electronic Materials, 1(8), 1641–1652.

Modified approach to modeling barrier inhomogeneity in Schottky diodes

Semiconductor Science and Technology, 1.

The polarization field in Al-rich AlGaN multiple quantum wells

JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 58.

6 kW/cm2 UVC laser threshold in optically pumped lasers achieved by controlling point defect formation

Applied Physics Express.

A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition

Journal of Applied Physics, 124(11).

Au:Ga Alloyed Clusters to Enhance Al Contacts to P-type GaN

2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID).

Bioelectronics communication: encoding yeast regulatory responses using nanostructured gallium nitride thin films

Nanoscale, 10(24), 11506–11516.

Bulk and Surface Electronic Properties of Inorganic Materials: Tools to Guide Cellular Behavior

SMALL METHODS, 2(9).

Design Challenges for Mid-UV Laser Diodes

2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID).

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

Applied Physics Letters, 112(6), 062102.

Electrical and Structural Characterization of Si Implanted Homoepitaxially Grown AlN

2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID).

Improving the Conductivity Limits in Si Doped Al Rich AlGaN

2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID).

N- and P- type Doping in Al-rich AlGaN and AlN

ECS Transactions.

Noninvasive Stimulation of Neurotypic Cells Using Persistent Photoconductivity of Gallium Nitride

ACS Omega, 3(1), 615–621.

On compensation in Si-doped AlN

Applied Physics Letters, 112(15).

On contacts to III-nitride deep-UV emitters

2018 3rd International Conference on Microwave and Photonics (ICMAP).

Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(6).

Point-Defect Nature of the Ultraviolet Absorption Band in AlN

Physical Review Applied, 9(5).

Variably doped nanostructured gallium nitride surfaces can serve as biointerfaces for neurotypic PC12 cells and alter their behavior

RSC ADVANCES, 8(64), 36722–36730.

Defect quasi Fermi level control-based CN reduction in GaN: Evidence for the role of minority carriers

Applied Physics Letters, 111(15), 152101.

Defect-free Ni/GaN Schottky barrier behavior with high temperature stability

Applied Physics Letters, 110(1), 011603.

High free carrier concentration in p-GaN grown on AlN substrates

Applied Physics Letters, 111(3), 032109.

Material considerations for the development of III-nitride power devices

ECS Transactions, 80(7), 29–36.

Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN

Japanese Journal of Applied Physics, 56(10), 100302.

On Ni/Au Alloyed Contacts to Mg-Doped GaN

Journal of Electronic Materials, 47(1), 305–311.

Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatment

Applied Physics Express, 10(7), 071001.

Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN

Journal of Applied Physics, 122(24), 245702.

A Study of Surfaces, Interfaces and Point Defect Control in III-Nitrides

Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition

Journal of Applied Physics, 120(10), 105701.

Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications

Applied Physics Letters, 108(26), 261106.

High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

Journal of Applied Physics, 119(14), 145702.

Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control

Journal of Applied Physics, 120(18), 185704.

The effect of illumination power density on carbon defect configuration in silicon doped GaN

Journal of Applied Physics, 120(23), 235705.

A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN

Journal of Applied Physics, 117(24), 245702.

Charge neutrality levels, barrier heights, and band offsets at polar AlGaN

Applied Physics Letters, 107(9), 091603.

KOH based selective wet chemical etching of AlN, AlxGa1−xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode

Applied Physics Letters, 106(8), 082110.

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

Applied Physics Letters, 105(22), 222101.

Schottky contact formation on polar and non-polar AlN

Journal of Applied Physics, 116(19), 194503.

The effect of polarity and surface states on the Fermi level at III-nitride surfaces

Journal of Applied Physics, 116(12).

The effect of polarity and surface states on the Fermi level at III-nitride surfaces

Journal of Applied Physics, 116(12), -.

Isotherm behavior studies of silica nanoparticles: Role of surfactant concentration and particle size

Proceedings - ISPTS-1, 1st International Symposium on Physics and Technology of Sensors, 79–82.

Optical and I-V studies on Au-ZnO-ITO based UV-sensing devices

16th International Workshop on Physics of Semiconductor Devices.

Sensing behavior study of silica-coated Ag nanoparticles deposited on glassy carbon toward nitrobenzene

Journal of Nanoparticle Research.

Synthesis and Optical Characterization of ZnO Quantum Dots and Nanorods

Advanced Science, Engineering and Medicine.

Synthesis and electrical behavior study of Mn3O4nanoceramic powder for low temperature NTC thermistor

Journal of Materials Science: Materials in Electronics, 23(10), 1891–1897.