Pramod Reddy

III-Nitrides, Point defect control, Fermi level control, Passivation, silicon nitride, AlGaN, GaN, AlN, Schottky contacts, Ohmic contacts, Surface states, XPS

Works (98)

Updated: March 2nd, 2024 05:38

2024 journal article

Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activation

JOURNAL OF APPLIED PHYSICS, 135(2).

By: K. Huynh*, Y. Wang*, M. Liao*, J. Tweedie*, P. Reddy*, M. Breckenridge n, R. Collazo n, Z. Sitar n ...

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
Sources: ORCID, Web Of Science
Added: January 28, 2024

2023 article

Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing

Stein, S. R., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., Tweedie, J., … Pavlidis, S. (2023, December 12). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12.

By: S. Stein n, D. Khachariya*, W. Mecouch*, S. Mita*, P. Reddy*, J. Tweedie n, K. Sierakowski*, G. Kamler* ...

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
author keywords: Schottky diodes; Annealing; Ion implantation; Schottky barriers; P-n junctions; Resistance; Gallium nitride; junction barrier Schottky (JBS) diode; Mg activation; p-n diode; power semiconductor device; Schottky contact; ultrahigh-pressure annealing (UHPA); vertical GaN
Sources: Web Of Science, ORCID
Added: January 2, 2024

2023 journal article

Anderson transition in compositionally graded p-AlGaN

JOURNAL OF APPLIED PHYSICS, 134(19).

By: S. Rathkanthiwar n, P. Reddy*, C. Quinones n, J. Loveless n, M. Kamiyama n, P. Bagheri n, D. Khachariya*, T. Eldred n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: November 16, 2023

2023 article

Chemical Vapor Deposition of Monolayer MoS2 on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction Optoelectronics

Sengupta, R., Vaidya, S., Szymanski, D., Khachariya, D., Bockowski, M., Kamler, G., … Pavlidis, S. (2023, March 24). ACS APPLIED NANO MATERIALS, Vol. 3.

By: R. Sengupta n, S. Vaidya n, D. Szymanski n, D. Khachariya*, M. Bockowski*, G. Kamler*, P. Reddy*, Z. Sitar n, R. Collazo n, S. Pavlidis n

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
author keywords: N-polar; gallium nitride; chemomechanical polishing; MoS 2; monolayer; chemical vapor deposition
Sources: ORCID, Web Of Science
Added: March 25, 2023

2023 journal article

Demonstration of near-ideal Schottky contacts to Si-doped AlN

APPLIED PHYSICS LETTERS, 123(17).

By: C. Quinones n, D. Khachariya*, P. Bagheri n, P. Reddy*, S. Mita*, R. Kirste*, S. Rathkanthiwar n, J. Tweedie* ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: October 25, 2023

2023 journal article

High conductivity in Ge-doped AlN achieved by a non-equilibrium process

APPLIED PHYSICS LETTERS, 122(14).

By: P. Bagheri n, C. Quinones-Garcia n, D. Khachariya*, J. Loveless n, Y. Guan n, S. Rathkanthiwar n, P. Reddy*, R. Kirste* ...

co-author countries: United States of America 🇺🇸
Sources: ORCID, Web Of Science
Added: April 6, 2023

2023 journal article

High p-conductivity in AlGaN enabled by polarization field engineering

APPLIED PHYSICS LETTERS, 122(15).

By: S. Rathkanthiwar n, P. Reddy*, B. Moody*, C. Quinones-Garcia n, P. Bagheri n, D. Khachariya*, R. Dalmau*, S. Mita* ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: April 19, 2023

2023 journal article

Performance and reliability of state-of-the-art commercial UVC light emitting diodes

Solid-State Electronics.

By: J. Loveless n, R. Kirste*, B. Moody*, P. Reddy*, S. Rathkanthiwar n, J. Almeter n, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Source: ORCID
Added: February 1, 2024

2023 journal article

Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor

APPLIED PHYSICS EXPRESS, 16(3).

By: S. Stein n, D. Khachariya*, S. Mita*, M. Breckenridge n, J. Tweedie*, P. Reddy*, K. Sierakowski*, G. Kamler* ...

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
author keywords: GaN; JBS diode; Schottky contact; ultra-high-pressure-annealing; ideality factor; ion implantation; barrier height
Sources: Web Of Science, ORCID
Added: April 17, 2023

2022 journal article

The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN

APPLIED PHYSICS LETTERS, 120(3).

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: May 2, 2022

2022 journal article

Doping and compensation in heavily Mg doped Al-rich AlGaN films

APPLIED PHYSICS LETTERS, 120(8).

By: P. Bagheri n, A. Klump n, S. Washiyama n, M. Breckenridge n, J. Kim n, Y. Guan n, D. Khachariya n, C. Quinones-Garcia n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: June 20, 2022

2022 journal article

Effects of temperature and oxygen partial pressure on electrical conductivity of Fe-doped β-Ga2O3 single crystals

Applied Physics Letters, 120(18).

By: G. Ryu*, P. Reddy n, R. Collazo n & E. Dickey*

co-author countries: United States of America 🇺🇸

Contributors: G. Ryu*, P. Reddy n, R. Collazo n & E. Dickey*

Source: ORCID
Added: May 5, 2022

2022 journal article

GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions

JOURNAL OF APPLIED PHYSICS, 131(1).

By: D. Szymanski n, D. Khachariya n, T. Eldred n, P. Bagheri n, S. Washiyama n, A. Chang*, S. Pavlidis n, R. Kirste* ...

co-author countries: United States of America 🇺🇸
Sources: ORCID, Web Of Science
Added: January 4, 2022

2022 journal article

High electron mobility in AlN:Si by point and extended defect management

JOURNAL OF APPLIED PHYSICS, 132(18).

co-author countries: United States of America 🇺🇸
Sources: ORCID, Web Of Science
Added: November 10, 2022

2022 article

Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3.

By: P. Reddy*, W. Mecouch*, M. Breckenridge n, D. Khachariya n, P. Bagheri n, J. Kim n, Y. Guan n, S. Mita* ...

co-author countries: United States of America 🇺🇸
author keywords: AlGaN; APD; UVC
Sources: ORCID, Web Of Science
Added: March 11, 2022

2022 journal article

Low resistivity, p-type, N-Polar GaN achieved by chemical potential control

APPLIED PHYSICS EXPRESS, 15(8).

By: S. Rathkanthiwar n, D. Szymanski n, D. Khachariya n, P. Bagheri n, J. Kim n, S. Mita*, P. Reddy*, E. Kohn n ...

co-author countries: United States of America 🇺🇸
author keywords: N-polar GaN; p doping; compensation; chemical potential control
Sources: Web Of Science, ORCID
Added: August 8, 2022

2022 journal article

On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).

By: A. Jadhav*, P. Bagheri n, A. Klump n, D. Khachariya n, S. Mita*, P. Reddy*, S. Rathkanthiwar n, R. Kirste* ...

co-author countries: India 🇮🇳 United States of America 🇺🇸
author keywords: III-nitride; Mg-doped AlGaN; ionization energy; mobility; contact resistance
Sources: ORCID, Web Of Science
Added: November 6, 2021

2022 journal article

Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices

APPLIED PHYSICS EXPRESS, 15(5).

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: April 25, 2022

2022 journal article

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS, 120(17).

By: D. Khachariya n, S. Mita*, P. Reddy*, S. Dangi n, J. Dycus*, P. Bagheri n, M. Breckenridge n, R. Sengupta n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: May 31, 2022

2022 article

Spintronic Terahertz Emission in Ultrawide Bandgap Semiconductor/Ferromagnet Heterostructures

Comstock, A., Biliroglu, M., Seyitliyev, D., McConnell, A., Vetter, E., Reddy, P., … Sun, D. (2022, October 31). ADVANCED OPTICAL MATERIALS, Vol. 10.

By: A. Comstock n, M. Biliroglu n, D. Seyitliyev n, A. McConnell n, E. Vetter n, P. Reddy*, R. Kirste*, D. Szymanski* ...

co-author countries: United States of America 🇺🇸
author keywords: spintronics; terahertz; two-dimensional electron gas; ultrawide bandgap semiconductors
Sources: Web Of Science, ORCID
Added: November 14, 2022

2022 journal article

Systematic oxygen impurity reduction in smooth N-polar GaN by chemical potential control

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).

By: D. Szymanski*, K. Wang, F. Kaess*, R. Kirste*, S. Mita*, P. Reddy*, Z. Sitar*, R. Collazo*

author keywords: oxygen; impurity; semiconductor; nitride; chemical potential; defect
Sources: Web Of Science, ORCID
Added: June 19, 2023

2022 article

Tracking of Point Defects in the Full Compositional Range of AlGaN via Photoluminescence Spectroscopy

Hyun Kim, J., Bagheri, P., Kirste, R., Reddy, P., Collazo, R., & Sitar, Z. (2022, December 9). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 12.

By: J. Hyun Kim n, P. Bagheri n, R. Kirste*, P. Reddy*, R. Collazo n & Z. Sitar n

co-author countries: United States of America 🇺🇸
author keywords: AlGaN; AlN; defects; GaN; photoluminescence
Sources: ORCID, Web Of Science
Added: December 10, 2022

2022 journal article

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

APPLIED PHYSICS EXPRESS, 15(10).

By: D. Khachariya*, S. Stein n, W. Mecouch*, M. Breckenridge n, S. Rathkanthiwar n, S. Mita*, B. Moody*, P. Reddy* ...

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
author keywords: GaN; junction barrier Schottky diode; low ON-resistance; high breakdown voltage; Mg ion implantation; ultra-high-pressure anneal
Sources: Web Of Science, ORCID
Added: October 3, 2022

2021 journal article

A pathway to highly conducting Ge-doped AlGaN

JOURNAL OF APPLIED PHYSICS, 130(20).

By: P. Bagheri n, J. Kim n, S. Washiyama n, P. Reddy*, A. Klump n, R. Kirste*, S. Mita*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: ORCID, Web Of Science
Added: November 23, 2021

2021 journal article

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

APPLIED PHYSICS LETTERS, 118(2).

By: M. Breckenridge n, J. Tweedie*, P. Reddy*, Y. Guan n, P. Bagheri n, D. Szymanski n, S. Mita*, K. Sierakowski* ...

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
Sources: ORCID, Web Of Science
Added: January 14, 2021

2021 journal article

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

APPLIED PHYSICS LETTERS, 118(11).

By: M. Breckenridge n, P. Bagheri n, Q. Guo n, B. Sarkar n, D. Khachariya n, S. Pavlidis n, J. Tweedie*, R. Kirste* ...

co-author countries: United States of America 🇺🇸
Sources: ORCID, Web Of Science
Added: March 17, 2021

2021 journal article

Native oxide reconstructions on AlN and GaN (0001) surfaces

JOURNAL OF APPLIED PHYSICS, 129(19).

By: K. Mirrielees n, J. Dycus n, J. Baker n, P. Reddy*, R. Collazo n, Z. Sitar n, J. LeBeau*, D. Irving n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: September 13, 2021

2021 journal article

On the Ge shallow-to-deep level transition in Al-rich AlGaN

JOURNAL OF APPLIED PHYSICS, 130(5).

By: P. Bagheri n, P. Reddy*, S. Mita*, D. Szymanski n, J. Kim n, Y. Guan n, D. Khachariya n, A. Klump n ...

co-author countries: United States of America 🇺🇸
Sources: ORCID, Web Of Science
Added: August 4, 2021

2021 journal article

On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers

APPLIED PHYSICS LETTERS, 118(12).

By: D. Khachariya n, D. Szymanski n, M. Breckenridge n, P. Reddy*, E. Kohn n, Z. Sitar n, R. Collazo n, S. Pavlidis n

co-author countries: United States of America 🇺🇸
Sources: ORCID, Web Of Science
Added: March 24, 2021

2021 journal article

Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

APPLIED PHYSICS LETTERS, 118(4).

By: S. Washiyama n, K. Mirrielees n, P. Bagheri n, J. Baker n, J. Kim n, Q. Guo n, R. Kirste*, Y. Guan n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: March 29, 2021

2021 article

Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength

Kirste, R., Sarkar, B., Reddy, P., Guo, Q., Collazo, R., & Sitar, Z. (2021, December 15). JOURNAL OF MATERIALS RESEARCH, Vol. 12.

By: R. Kirste n, B. Sarkar n, P. Reddy n, Q. Guo n, R. Collazo n & Z. Sitar n

co-author countries: United States of America 🇺🇸
author keywords: Laser; Optoelectronic; Electrical properties; Optical properties; Dopant
Sources: Web Of Science, ORCID
Added: January 3, 2022

2021 journal article

Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN

APPLIED PHYSICS LETTERS, 119(18).

By: P. Reddy*, D. Khachariya n, W. Mecouch*, M. Breckenridge n, P. Bagheri n, Y. Guan n, J. Kim n, S. Pavlidis n ...

co-author countries: United States of America 🇺🇸
Sources: ORCID, Web Of Science
Added: November 3, 2021

2021 journal article

Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies

APPLIED PHYSICS LETTERS, 119(2).

By: J. Kim n, P. Bagheri n, S. Washiyama n, A. Klump n, R. Kirste*, S. Mita*, P. Reddy*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: July 26, 2021

2021 article

UV illumination effects on AlGaN/GaN HEMTs for tunable RF oscillators

2021 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS), pp. 168–170.

By: S. Stein n, M. Robbins n, P. Reddy*, R. Collazo n & S. Pavlidis n

co-author countries: United States of America 🇺🇸
author keywords: AlGaN/GaN HEMTs; Optical Control; Illumination Effects; Oscillator
Sources: Web Of Science, ORCID
Added: July 26, 2021

2021 journal article

Weak localization and dimensional crossover in compositionally graded AlxGa1-xN

APPLIED PHYSICS LETTERS, 118(8).

By: A. Al-Tawhid n, A. Shafe n, P. Bagheri n, Y. Guan n, P. Reddy*, S. Mita*, B. Moody*, R. Collazo n, Z. Sitar n, K. Ahadi n

co-author countries: United States of America 🇺🇸
Sources: ORCID, Web Of Science
Added: February 25, 2021

2020 journal article

Chemical treatment effects on Schottky contacts to metalorganic chemical vapor deposited n-type N-polar GaN

Journal of Applied Physics.

co-author countries: United States of America 🇺🇸
Source: ORCID
Added: August 12, 2020

2020 journal article

Control of passivation and compensation in Mg-doped GaN by defect quasi Fermi level control

Journal of Applied Physics.

By: A. Klump n, M. Hoffmann n, F. Kaess n, J. Tweedie*, P. Reddy*, R. Kirste*, Z. Sitar n, R. Collazo n

co-author countries: United States of America 🇺🇸
Source: ORCID
Added: January 23, 2020

2020 journal article

High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates

Applied Physics Letters, 116(8), 081101.

By: P. Reddy*, M. Breckenridge n, Q. Guo n, A. Klump n, D. Khachariya n, S. Pavlidis n, W. Mecouch*, S. Mita* ...

co-author countries: United States of America 🇺🇸
Source: ORCID
Added: February 25, 2020

2020 journal article

Impact of impurity-based phonon resonant scattering on thermal conductivity of single crystalline GaN

Applied Physics Letters.

By: P. Bagheri n, P. Reddy*, J. Kim n, R. Rounds n, T. Sochacki*, R. Kirste*, M. Bockowski*, R. Collazo n, Z. Sitar n

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
Source: ORCID
Added: August 25, 2020

2020 journal article

Impact of the effective refractive index in AlGaN-based mid-UV laser structures on waveguiding

Japanese Journal of Applied Physics, 7.

By: Q. Guo, R. Kirste, P. Reddy*, W. Mecouch, Y. Guan, S. Mita, S. Washiyama, J. Tweedie, Z. Sitar, R. Collazo

author keywords: UV laser; AlGaN; MQW; waveguide
Source: ORCID
Added: August 14, 2020

2020 journal article

Modulating the Stress Response of E. coli at GaN Interfaces Using Surface Charge, Surface Chemistry, and Genetic Mutations

ACS APPLIED BIO MATERIALS, 3(10), 7211–7218.

By: S. Gleco n, P. Reddy*, R. Kirste*, R. Collazo n, D. LaJeunesse* & A. Ivanisevic n

co-author countries: United States of America 🇺🇸
author keywords: gallium nitride; E. coli; UV light; surface charge; reactive oxygen species; calcium
Sources: ORCID, Web Of Science
Added: September 30, 2020

2020 journal article

Observation of carrier concentration dependent spintronic terahertz emission from n-GaN/NiFe heterostructures

Applied Physics Letters.

By: E. Vetter n, M. Biliroglu n, D. Seyitliyev n, P. Reddy*, R. Kirste*, Z. Sitar n, R. Collazo n, K. Gundogdu n, D. Sun n

co-author countries: United States of America 🇺🇸
Source: ORCID
Added: September 1, 2020

2020 journal article

Oxidative Stress Transcriptional Responses of Escherichia coli at GaN Interfaces

ACS Applied Bio Materials, 3(12), 9073–9081.

By: S. Gleco n, T. Noussi*, A. Jude*, P. Reddy*, R. Kirste*, R. Collazo n, D. LaJeunesse*, A. Ivanisevic n

co-author countries: United States of America 🇺🇸
author keywords: gallium nitride; E. coli; UV light; surface charge; genetic expression; oxidative stress
Source: ORCID
Added: December 2, 2020

2020 journal article

Pinning of energy transitions of defects, complexes, and surface states in AlGaN alloys

Applied Physics Letters.

By: P. Reddy*, Z. Bryan n, I. Bryan n, J. Kim n, S. Washiyama n, R. Kirste*, S. Mita*, J. Tweedie* ...

co-author countries: United States of America 🇺🇸
Source: ORCID
Added: January 23, 2020

2020 journal article

Role of polarity in SiN on Al/GaN and the pathway to stable contacts

Semiconductor Science and Technology, 2(5), 055007.

co-author countries: United States of America 🇺🇸
author keywords: SiN; AlGaN; GaN; passivation; polarity; polarization; interface
Source: ORCID
Added: February 19, 2020

2020 journal article

Shallow Si donor in ion-implanted homoepitaxial AlN

Applied Physics Letters, 116(17), 172103.

By: M. Breckenridge n, Q. Guo n, A. Klump n, B. Sarkar n, Y. Guan n, J. Tweedie*, R. Kirste*, S. Mita* ...

co-author countries: United States of America 🇺🇸
Source: ORCID
Added: April 28, 2020

2020 journal article

The 2020 UV emitter roadmap

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 53(50).

By: H. Amano*, R. Collazo n, C. Santi*, S. Einfeldt*, M. Funato*, J. Glaab*, S. Hagedorn*, A. Hirano ...

co-author countries: Germany 🇩🇪 France 🇫🇷 United Kingdom of Great Britain and Northern Ireland 🇬🇧 Ireland 🇮🇪 India 🇮🇳 Italy 🇮🇹 Japan 🇯🇵 Taiwan, Province of China 🇹🇼 United States of America 🇺🇸
author keywords: ultraviolet; light emitting diodes; InGaN; UV-LED; AlGaN
Sources: Web Of Science, ORCID
Added: October 19, 2020

2020 journal article

The nature of the DX state in Ge-doped AlGaN

Applied Physics Letters.

co-author countries: United States of America 🇺🇸
Source: ORCID
Added: June 4, 2020

2020 journal article

The role of chemical potential in compensation control in Si:AlGaN

Journal of Applied Physics.

By: S. Washiyama n, P. Reddy*, B. Sarkar n, M. Breckenridge n, Q. Guo n, P. Bagheri n, A. Klump n, R. Kirste* ...

co-author countries: United States of America 🇺🇸
Source: ORCID
Added: March 10, 2020

2019 conference paper

Al Rich AlGaN Based APDs on Single Crystal AlN with Solar Blindness and Room Temperature Operation

2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID).

Pramod Reddy

Source: ORCID
Added: June 5, 2020

2019 journal article

Behavior of E. coli with Variable Surface Morphology Changes on Charged Semiconductor Interfaces

ACS Applied Bio Materials, 2(9), 4044–4051.

By: D. Iyer*, A. Gulyuk n, P. Reddy*, R. Kirste*, R. Collazo n, D. LaJeunesse*, A. Ivanisevic n

co-author countries: United States of America 🇺🇸
author keywords: gallium nitride; E. coli; UV light; Kelvin probe force microscopy; membrane potential; catalase; cell adhesion
Source: ORCID
Added: August 24, 2019

2019 journal article

Design of AlGaN-based quantum structures for low threshold UVC lasers

Journal of Applied Physics.

By: Q. Guo n, R. Kirste*, S. Mita*, J. Tweedie*, P. Reddy*, B. Moody*, Y. Guan n, S. Washiyama n ...

co-author countries: United States of America 🇺🇸
Source: ORCID
Added: December 10, 2019

2019 conference paper

Development of Near UV Laser Diodes

2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID).

Pramod Reddy

Source: ORCID
Added: June 5, 2020

2019 journal article

Interfacial Properties of Doped Semiconductor Materials Can Alter the Behavior of Pseudomonas aeruginosa Films

ACS Applied Electronic Materials, 1(8), 1641–1652.

By: A. Gulyuk n, D. LaJeunesse*, P. Reddy*, R. Kirste*, R. Collazo n & A. Ivanisevic n

co-author countries: United States of America 🇺🇸
author keywords: gallium nitride; Pseudomonas aeruginosa; UV light; X-ray photoelectron spectroscopy; Kelvin probe force microscopy; reactive oxygen species; catalase; intracellular Ca2+
Source: ORCID
Added: August 9, 2019

2019 journal article

Modified approach to modeling barrier inhomogeneity in Schottky diodes

Semiconductor Science and Technology, 1.

By: P. Reddy* & J. Kumar*

co-author countries: India 🇮🇳
author keywords: Schottky contacts; inhomogeneity; barrier height
Source: ORCID
Added: January 23, 2019

2019 article

The polarization field in Al-rich AlGaN multiple quantum wells

Guo, Q., Kirste, R., Mita, S., Tweedie, J., Reddy, P., Washiyama, S., … Sitar, Z. (2019, June 1). JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 58.

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: July 29, 2019

2018 journal article

6 kW/cm2 UVC laser threshold in optically pumped lasers achieved by controlling point defect formation

Applied Physics Express.

Pramod Reddy

Source: ORCID
Added: June 5, 2020

2018 journal article

A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 124(11).

By: S. Washiyama n, P. Reddy*, F. Kaess n, R. Kirste*, S. Mita*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: October 16, 2018

2018 conference paper

Au:Ga Alloyed Clusters to Enhance Al Contacts to P-type GaN

2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID).

Pramod Reddy

Source: ORCID
Added: June 5, 2020

2018 journal article

Bioelectronics communication: encoding yeast regulatory responses using nanostructured gallium nitride thin films

Nanoscale, 10(24), 11506–11516.

By: P. Snyder n, D. LaJeunesse*, P. Reddy*, R. Kirste*, R. Collazo n & A. Ivanisevic n

co-author countries: United States of America 🇺🇸

Contributors: P. Snyder n, D. Lajeunesse*, P. Reddy*, R. Kirste*, R. Collazo n & A. Ivanisevic n

MeSH headings : Cell Membrane / physiology; Cell Wall / physiology; Chitin / biosynthesis; Gallium / chemistry; Microscopy, Atomic Force; Nanostructures; Oxygen / chemistry; Saccharomyces cerevisiae / physiology; Semiconductors; Ultraviolet Rays
Sources: ORCID, Crossref
Added: January 23, 2019

2018 review

Bulk and Surface Electronic Properties of Inorganic Materials: Tools to Guide Cellular Behavior

[Review of ]. SMALL METHODS, 2(9).

By: P. Snyder n, P. Reddy*, R. Kirste*, R. Collazo n & A. Ivanisevic n

co-author countries: United States of America 🇺🇸
author keywords: (photo)conductivity; charge; neural cells; piezoelectricity; polarity; semiconductors
Sources: Web Of Science, ORCID
Added: October 16, 2018

2018 conference paper

Design Challenges for Mid-UV Laser Diodes

2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID).

Pramod Reddy

Source: ORCID
Added: June 5, 2020

2018 journal article

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

APPLIED PHYSICS LETTERS, 112(6).

By: I. Bryan n, Z. Bryan n, S. Washiyama n, P. Reddy*, B. Gaddy n, B. Sarkar n, M. Breckenridge n, Q. Guo n ...

co-author countries: United States of America 🇺🇸
Sources: ORCID, Web Of Science
Added: August 6, 2018

2018 conference paper

Electrical and Structural Characterization of Si Implanted Homoepitaxially Grown AlN

2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID).

Pramod Reddy

Source: ORCID
Added: June 5, 2020

2018 conference paper

Improving the Conductivity Limits in Si Doped Al Rich AlGaN

2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID).

Pramod Reddy

Source: ORCID
Added: June 5, 2020

2018 journal article

N- and P- type Doping in Al-rich AlGaN and AlN

ECS Transactions.

Pramod Reddy

Source: ORCID
Added: June 5, 2020

2018 journal article

Noninvasive Stimulation of Neurotypic Cells Using Persistent Photoconductivity of Gallium Nitride

ACS Omega, 3(1), 615–621.

By: P. Snyder n, P. Reddy*, R. Kirste*, D. LaJeunesse*, R. Collazo n & A. Ivanisevic n

co-author countries: United States of America 🇺🇸
Sources: ORCID, Crossref
Added: January 23, 2019

2018 journal article

On compensation in Si-doped AlN

APPLIED PHYSICS LETTERS, 112(15).

By: J. Harris n, J. Baker n, B. Gaddy n, I. Bryan n, Z. Bryan n, K. Mirrielees n, P. Reddy*, R. Collazo n, Z. Sitar n, D. Irving n

co-author countries: United States of America 🇺🇸
Sources: ORCID, Web Of Science
Added: August 6, 2018

2018 conference paper

On contacts to III-nitride deep-UV emitters

2018 3rd International Conference on Microwave and Photonics (ICMAP).

By: B. Sarkar n, P. Reddy*, A. Klump n, R. Rounds n, M. Breckenridge n, B. Haidet n, S. Mita, R. Kirste, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: ORCID, NC State University Libraries
Added: August 6, 2018

2018 journal article

Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(6).

By: P. Reddy n, S. Washiyama n, W. Mecouch n, L. Hernandez-Balderrama n, F. Kaess n, M. Breckenridge n, B. Sarkar n, B. Haidet n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: December 10, 2018

2018 journal article

Point-Defect Nature of the Ultraviolet Absorption Band in AIN

PHYSICAL REVIEW APPLIED, 9(5).

By: D. Alden n, J. Harris n, Z. Bryan n, J. Baker n, P. Reddy n, S. Mita*, G. Callsen*, A. Hoffmann* ...

co-author countries: Germany 🇩🇪 United States of America 🇺🇸

Contributors: D. Alden n, J. Harris n, Z. Bryan n, J. Baker n, P. Reddy n, S. Mita*, G. Callsen*, A. Hoffmann* ...

Sources: Web Of Science, ORCID
Added: August 6, 2018

2018 journal article

Variably doped nanostructured gallium nitride surfaces can serve as biointerfaces for neurotypic PC12 cells and alter their behavior

RSC ADVANCES, 8(64), 36722–36730.

By: P. Snyder n, P. Reddy*, R. Kirste*, D. LaJeunesse*, R. Collazo n & A. Ivanisevic n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: November 26, 2018

2017 article

(Invited) Material Considerations for the Development of III-nitride Power Devices

GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 7, Vol. 80, pp. 29–36.

By: B. Sarkar n, P. Reddy n, F. Kaess n, B. Haidet n, J. Tweedie*, S. Mita*, R. Kirste*, E. Kohn n ...

co-author countries: United States of America 🇺🇸

Contributors: B. Sarkar n, P. Reddy n, F. Kaess n, B. Haidet n, J. Tweedie*, S. Mita*, R. Kirste*, E. Kohn n, R. Collazo n, Z. Sitar n

Sources: Web Of Science, ORCID
Added: August 6, 2018

2017 journal article

Defect quasi Fermi level control-based C-N reduction in GaN: Evidence for the role of minority carriers

APPLIED PHYSICS LETTERS, 111(15).

By: P. Reddy n, F. Kaess n, J. Tweedie*, R. Kirste*, S. Mita*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2017 journal article

Defect-free Ni/GaN Schottky barrier behavior with high temperature stability

APPLIED PHYSICS LETTERS, 110(1).

By: P. Reddy n, B. Sarkar n, F. Kaess n, M. Gerhold*, E. Kohn n, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2017 journal article

High free carrier concentration in p-GaN grown on AlN substrates

APPLIED PHYSICS LETTERS, 111(3).

By: B. Sarkar n, S. Mita n, P. Reddy n, A. Klump n, F. Kaess n, J. Tweedie n, I. Bryan n, Z. Bryan n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2017 journal article

Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN

JAPANESE JOURNAL OF APPLIED PHYSICS, 56(10).

By: B. Haidet n, B. Sarkar n, P. Reddy n, I. Bryan n, Z. Bryan n, R. Kirste*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸

Contributors: B. Haidet n, B. Sarkar n, P. Reddy n, I. Bryan n, Z. Bryan n, R. Kirste*, R. Collazo n, Z. Sitar n

Sources: Web Of Science, ORCID
Added: August 6, 2018

2017 journal article

On Ni/Au Alloyed Contacts to Mg-Doped GaN

Journal of Electronic Materials, 47(1), 305–311.

By: B. Sarkar n, P. Reddy n, A. Klump n, F. Kaess n, R. Rounds n, R. Kirste n, S. Mita n, E. Kohn n, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
author keywords: Alloyed contact; p-GaN; TLM; specific contact resistance
Sources: ORCID, Web Of Science, Crossref
Added: August 6, 2018

2017 journal article

Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatment

APPLIED PHYSICS EXPRESS, 10(7).

By: B. Sarkar n, B. Haidet n, P. Reddy n, R. Kirste n, R. Collazo n & Z. Sitar n

co-author countries: United States of America 🇺🇸

Contributors: B. Sarkar n, B. Haidet n, P. Reddy n, R. Kirste n, R. Collazo n & Z. Sitar n

Sources: Web Of Science, ORCID
Added: August 6, 2018

2017 journal article

Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN

Journal of Applied Physics, 122(24), 245702.

By: P. Reddy n, S. Washiyama n, F. Kaess n, R. Kirste*, S. Mita*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2016 thesis

A Study of Surfaces, Interfaces and Point Defect Control in III-Nitrides

By: P. Reddy

Source: ORCID
Added: June 5, 2020

2016 journal article

Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 120(10).

By: F. Kaess n, S. Mita, J. Xie n, P. Reddy n, A. Klump n, L. Hernandez-Balderrama n, S. Washiyama n, A. Franke n ...

co-author countries: Germany 🇩🇪 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 journal article

Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications

APPLIED PHYSICS LETTERS, 108(26).

By: D. Alden n, W. Guo n, R. Kirste*, F. Kaess n, I. Bryan n, T. Troha*, A. Bagal n, P. Reddy n ...

co-author countries: Germany 🇩🇪 Slovenia 🇸🇮 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 journal article

High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

JOURNAL OF APPLIED PHYSICS, 119(14).

By: P. Reddy n, S. Washiyama n, F. Kaess n, M. Breckenridge n, L. Hernandez-Balderrama n, B. Haidet n, D. Alden n, A. Franke n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 journal article

Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control

JOURNAL OF APPLIED PHYSICS, 120(18).

By: P. Reddy n, M. Hoffmann n, F. Kaess n, Z. Bryan n, I. Bryan n, M. Bobea n, A. Klump n, J. Tweedie* ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 journal article

The effect of illumination power density on carbon defect configuration in silicon doped GaN

JOURNAL OF APPLIED PHYSICS, 120(23).

By: F. Kaess n, P. Reddy n, D. Alden n, A. Klump n, L. Hernandez-Balderrama n, A. Franke n, R. Kirste*, A. Hoffmann* ...

co-author countries: Germany 🇩🇪 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2015 journal article

A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN

JOURNAL OF APPLIED PHYSICS, 117(24).

By: B. Haidet n, I. Bryan n, P. Reddy n, Z. Bryan n, R. Collazo n & Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2015 journal article

Charge neutrality levels, barrier heights, and band offsets at polar AlGaN

APPLIED PHYSICS LETTERS, 107(9).

By: P. Reddy n, I. Bryan n, Z. Bryan n, J. Tweedie*, S. Washiyama n, R. Kirste n, S. Mita*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2015 journal article

KOH based selective wet chemical etching of AlN, AlxGa1-xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode

APPLIED PHYSICS LETTERS, 106(8).

By: W. Guo n, R. Kirste n, I. Bryan n, Z. Bryan n, L. Hussey n, P. Reddy n, J. Tweedie*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 journal article

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

APPLIED PHYSICS LETTERS, 105(22).

By: Z. Bryan n, I. Bryan n, B. Gaddy n, P. Reddy n, L. Hussey n, M. Bobea n, W. Guo n, M. Hoffmann n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 journal article

Schottky contact formation on polar and non-polar AlN

JOURNAL OF APPLIED PHYSICS, 116(19).

By: P. Reddy n, I. Bryan n, Z. Bryan n, J. Tweedie n, R. Kirste n, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 journal article

The effect of polarity and surface states on the Fermi level at III-nitride surfaces

JOURNAL OF APPLIED PHYSICS, 116(12).

By: P. Reddy n, I. Bryan n, Z. Bryan n, W. Guo n, L. Hussey n, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸

Contributors: P. Reddy n, I. Bryan n, Z. Bryan n, W. Guo n, L. Hussey n, R. Collazo n, Z. Sitar n

Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 journal article

The effect of polarity and surface states on the Fermi level at III-nitride surfaces

Journal of Applied Physics, 116(12), -.

By: P. Reddy n, I. Bryan n, Z. Bryan n, W. Guo n, L. Hussey n, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Source: ORCID
Added: January 23, 2019

2012 conference paper

Isotherm behavior studies of silica nanoparticles: Role of surfactant concentration and particle size

Proceedings - ISPTS-1, 1st International Symposium on Physics and Technology of Sensors, 79–82.

By: P. Devi*, P. Reddy*, S. Singh*, M. Singla*, C. Ghanshyam*, A. Paul Pawan Kapur, Vishal

co-author countries: India 🇮🇳

Contributors: P. Devi*, P. Reddy*, S. Singh*, M. Singla*, C. Ghanshyam*, A. Paul Pawan Kapur, Vishal

Source: ORCID
Added: January 23, 2019

2012 conference paper

Optical and I-V studies on Au-ZnO-ITO based UV-sensing devices

16th International Workshop on Physics of Semiconductor Devices.

Pramod Reddy

author keywords: Zinc oxide; UV sensors; refractive index; sputtering; ellipsometry
Source: ORCID
Added: June 5, 2020

2012 journal article

Sensing behavior study of silica-coated Ag nanoparticles deposited on glassy carbon toward nitrobenzene

Journal of Nanoparticle Research.

Pramod Reddy

author keywords: Core/shell nanostructures; Modified electrode; Electrochemical sensor; Nitrobenzene
Source: ORCID
Added: January 23, 2019

2012 journal article

Synthesis and Optical Characterization of ZnO Quantum Dots and Nanorods

Advanced Science, Engineering and Medicine.

Pramod Reddy

Source: ORCID
Added: June 5, 2020

2012 journal article

Synthesis and electrical behavior study of Mn3O4nanoceramic powder for low temperature NTC thermistor

Journal of Materials Science: Materials in Electronics, 23(10), 1891–1897.

By: P. Kohli*, P. Devi*, P. Reddy*, K. Raina & M. Singla*

co-author countries: India 🇮🇳

Contributors: P. Kohli*, P. Devi*, P. Reddy*, K. Raina & M. Singla*

Source: ORCID
Added: January 23, 2019

Employment

Updated: July 19th, 2021 15:57

2021 - present

North Carolina State University Raleigh, North Carolina, US
Research Scholar

2016 - present

Adroit Materials inc. Cary, North Carolina, US
Research Scientist III-Nitride Technology

2013 - 2016

North Carolina State University Raleigh, NC, US
Research Assistant Materials Science and Engineering

2010 - 2012

Central Scientific Instruments Organisation CSIR Chandigarh, Punjab, IN
Scientist

Education

Updated: December 19th, 2016 14:50

2012 - 2016

North Carolina State University Raleigh, NC, US
PhD Materials Science and Engineering

2008 - 2010

Indian Institute of Technology Kanpur Kanpur, Uttar Pradesh, IN
M.Tech Materials Science

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