Pramod Reddy

Control of passivation and compensation in Mg-doped GaN by defect quasi Fermi level control

Journal of Applied Physics.

Pinning of energy transitions of defects, complexes, and surface states in AlGaN alloys

Applied Physics Letters.

Behavior of E. coli with Variable Surface Morphology Changes on Charged Semiconductor Interfaces

ACS Applied Bio Materials, 8.

Design of AlGaN-based quantum structures for low threshold UVC lasers

Journal of Applied Physics.

Interfacial Properties of Doped Semiconductor Materials Can Alter the Behavior of Pseudomonas aeruginosa Films

ACS Applied Electronic Materials, 8.

Modified approach to modeling barrier inhomogeneity in Schottky diodes

Semiconductor Science and Technology, 1.

The polarization field in Al-rich AlGaN multiple quantum wells

JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 58.

A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition

Journal of Applied Physics, 124(11).

Bioelectronics communication: encoding yeast regulatory responses using nanostructured gallium nitride thin films

Nanoscale, 10(24), 11506–11516.

Bulk and Surface Electronic Properties of Inorganic Materials: Tools to Guide Cellular Behavior

SMALL METHODS, 2(9).

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

Applied Physics Letters, 112(6), 062102.

Noninvasive Stimulation of Neurotypic Cells Using Persistent Photoconductivity of Gallium Nitride

ACS Omega.

On compensation in Si-doped AlN

Applied Physics Letters.

Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(6).

Point-Defect Nature of the Ultraviolet Absorption Band in AlN

Physical Review Applied, 9(5).

Variably doped nanostructured gallium nitride surfaces can serve as biointerfaces for neurotypic PC12 cells and alter their behavior

RSC ADVANCES, 8(64), 36722–36730.

Defect quasi Fermi level control-based CN reduction in GaN: Evidence for the role of minority carriers

Applied Physics Letters, 111(15), 152101.

Defect-free Ni/GaN Schottky barrier behavior with high temperature stability

Applied Physics Letters, 110(1), 011603.

High free carrier concentration in p-GaN grown on AlN substrates

Applied Physics Letters, 111(3), 032109.

Material considerations for the development of III-nitride power devices

ECS Transactions, 80(7), 29–36.

Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN

Japanese Journal of Applied Physics, 56(10), 100302.

On Ni/Au Alloyed Contacts to Mg-Doped GaN

Journal of Electronic Materials, 9.

Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatment

Applied Physics Express, 10(7), 071001.

Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN

Journal of Applied Physics, 122(24), 245702.

Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition

Journal of Applied Physics, 120(10), 105701.

Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications

Applied Physics Letters, 108(26), 261106.

High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

Journal of Applied Physics, 119(14), 145702.

Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control

Journal of Applied Physics, 120(18), 185704.

The effect of illumination power density on carbon defect configuration in silicon doped GaN

Journal of Applied Physics, 120(23), 235705.

A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN

Journal of Applied Physics, 117(24), 245702.

Charge neutrality levels, barrier heights, and band offsets at polar AlGaN

Applied Physics Letters, 107(9), 091603.

KOH based selective wet chemical etching of AlN, AlxGa1−xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode

Applied Physics Letters, 106(8), 082110.

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

Applied Physics Letters, 105(22), 222101.

Schottky contact formation on polar and non-polar AlN

Journal of Applied Physics, 116(19), 194503.

The effect of polarity and surface states on the Fermi level at III-nitride surfaces

Journal of Applied Physics, 116(12).

The effect of polarity and surface states on the Fermi level at III-nitride surfaces

Journal of Applied Physics, 116(12), -.

Isotherm behavior studies of silica nanoparticles: Role of surfactant concentration and particle size

Proceedings - ISPTS-1, 1st International Symposium on Physics and Technology of Sensors, 79–82.

Sensing behavior study of silica-coated Ag nanoparticles deposited on glassy carbon toward nitrobenzene

Journal of Nanoparticle Research.

Synthesis and electrical behavior study of Mn3O4nanoceramic powder for low temperature NTC thermistor

Journal of Materials Science: Materials in Electronics, 23(10), 1891–1897.