Pramod Reddy

Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activation

JOURNAL OF APPLIED PHYSICS, 135(2).

High-current, high-voltage AlN Schottky barrier diodes

Quinones, C. E., Khachariya, D., Reddy, P., Mita, S., Almeter, J., Bagheri, P., … Sitar, Z. (2024, October 1).

AlGaN Based Emitters and Detectors for Non-Line-of-Sight Communication

2023 IEEE Research and Applications of Photonics in Defense Conference, RAPID 2023 - Proceedings.

Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing

Stein, S. R., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., Tweedie, J., … Pavlidis, S. (2023, December 12). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 71.

Anderson transition in compositionally graded p-AlGaN

JOURNAL OF APPLIED PHYSICS, 134(19).

Chemical Vapor Deposition of Monolayer MoS2 on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction Optoelectronics

Sengupta, R., Vaidya, S., Szymanski, D., Khachariya, D., Bockowski, M., Kamler, G., … Pavlidis, S. (2023, March 24). ACS APPLIED NANO MATERIALS, Vol. 3.

Demonstration of near-ideal Schottky contacts to Si-doped AlN

APPLIED PHYSICS LETTERS, 123(17).

High conductivity and low activation energy in p-type AlGaN

Applied Physics Letters, 122(9).

High conductivity in Ge-doped AlN achieved by a non-equilibrium process

APPLIED PHYSICS LETTERS, 122(14).

High p-conductivity in AlGaN enabled by polarization field engineering

APPLIED PHYSICS LETTERS, 122(15).

Performance and reliability of state-of-the-art commercial UVC light emitting diodes

Solid-State Electronics, 209.

Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor

APPLIED PHYSICS EXPRESS, 16(3).

<p>The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN</p>

APPLIED PHYSICS LETTERS, 120(3).

Controllable N-type Doping In Ultra-Wide Bandgap AlN By Chemical Potential Control

2022 Compound Semiconductor Week, CSW 2022.

Defects Evolution and Mg Segregation in Mg-implanted GaN with Ultra-High-Pressure Annealing

ArXiv.

Doping and compensation in heavily Mg doped Al-rich AlGaN films

APPLIED PHYSICS LETTERS, 120(8).

Effects of temperature and oxygen partial pressure on electrical conductivity of Fe-doped β-Ga2O3 single crystals

Applied Physics Letters, 120(18).

GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions

JOURNAL OF APPLIED PHYSICS, 131(1).

High electron mobility in AlN:Si by point and extended defect management

JOURNAL OF APPLIED PHYSICS, 132(18).

Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3.

Low resistivity, p-type, N-Polar GaN achieved by chemical potential control

APPLIED PHYSICS EXPRESS, 15(8).

On the conduction mechanism in compositionally graded AlGaN

APPLIED PHYSICS LETTERS, 121(7).

Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices

APPLIED PHYSICS EXPRESS, 15(5).

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS, 120(17).

Schottky contacts to N-polar GaN with SiN interlayer for elevated temperature operation

Applied Physics Letters, 120(17).

Spintronic Terahertz Emission in Ultrawide Bandgap Semiconductor/Ferromagnet Heterostructures

Comstock, A., Biliroglu, M., Seyitliyev, D., McConnell, A., Vetter, E., Reddy, P., … Sun, D. (2022, October 31). ADVANCED OPTICAL MATERIALS, Vol. 11.

Tracking of Point Defects in the Full Compositional Range of AlGaN via Photoluminescence Spectroscopy

Hyun Kim, J., Bagheri, P., Kirste, R., Reddy, P., Collazo, R., & Sitar, Z. (2022, December 9). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 220.

UVC optoelectronics based on AlGaN on AlN single crystal substrates

2022 Compound Semiconductor Week, CSW 2022.

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

APPLIED PHYSICS EXPRESS, 15(10).

A pathway to highly conducting Ge-doped AlGaN

JOURNAL OF APPLIED PHYSICS, 130(20).

Al_0.85Ga_0.15N/Al_0.6Ga_0.4N High Electron Mobility Transistors on Native AlN Substrates with &gt;9 MV/cm Mesa Breakdown Fields

Device Research Conference - Conference Digest, DRC, 2021-June.

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

APPLIED PHYSICS LETTERS, 118(2).

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

APPLIED PHYSICS LETTERS, 118(11).

Native oxide reconstructions on AlN and GaN (0001) surfaces

JOURNAL OF APPLIED PHYSICS, 129(19).

On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).

On the Ge shallow-to-deep level transition in Al-rich AlGaN

JOURNAL OF APPLIED PHYSICS, 130(5).

On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers

APPLIED PHYSICS LETTERS, 118(12).

Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

APPLIED PHYSICS LETTERS, 118(4).

Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength

Kirste, R., Sarkar, B., Reddy, P., Guo, Q., Collazo, R., & Sitar, Z. (2021, December 15). JOURNAL OF MATERIALS RESEARCH, Vol. 12.

Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN

APPLIED PHYSICS LETTERS, 119(18).

Systematic oxygen impurity reduction in smooth N-polar GaN by chemical potential control

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).

Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies

APPLIED PHYSICS LETTERS, 119(2).

UV illumination effects on AlGaN/GaN HEMTs for tunable RF oscillators

2021 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS), pp. 168–170.

Weak localization and dimensional crossover in compositionally graded AlxGa1-xN

APPLIED PHYSICS LETTERS, 118(8).

A path toward vertical gan superjunction devices

ECS Transactions, 98(6), 69–79.

Chemical treatment effects on Schottky contacts to metalorganic chemical vapor deposited n-type N-polar GaN

Journal of Applied Physics, 128(6).

Control of passivation and compensation in Mg-doped GaN by defect quasi Fermi level control

Journal of Applied Physics, 127(4).

High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates

Applied Physics Letters, 116(8), 081101.

Impact of impurity-based phonon resonant scattering on thermal conductivity of single crystalline GaN

Applied Physics Letters, 117(8).

Impact of the effective refractive index in AlGaN-based mid-UV laser structures on waveguiding

Japanese Journal of Applied Physics, 7(9).

Modulating the Stress Response of E. coli at GaN Interfaces Using Surface Charge, Surface Chemistry, and Genetic Mutations

ACS APPLIED BIO MATERIALS, 3(10), 7211–7218.

Observation of carrier concentration dependent spintronic terahertz emission from n-GaN/NiFe heterostructures

Applied Physics Letters, 117(9).

Oxidative Stress Transcriptional Responses of Escherichia coli at GaN Interfaces

ACS Applied Bio Materials, 3(12), 9073–9081.

Pinning of energy transitions of defects, complexes, and surface states in AlGaN alloys

Applied Physics Letters, 116(3).

Role of polarity in SiN on Al/GaN and the pathway to stable contacts

Semiconductor Science and Technology, 2(5), 055007.

Shallow Si donor in ion-implanted homoepitaxial AlN

Applied Physics Letters, 116(17), 172103.

The 2020 UV emitter roadmap

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 53(50).

The nature of the DX state in Ge-doped AlGaN

Applied Physics Letters.

The role of chemical potential in compensation control in Si:AlGaN

Journal of Applied Physics, 127(10).

Al Rich AlGaN Based APDs on Single Crystal AlN with Solar Blindness and Room Temperature Operation

2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID).

Behavior of E. coli with Variable Surface Morphology Changes on Charged Semiconductor Interfaces

ACS Applied Bio Materials, 2(9), 4044–4051.

Design of AlGaN-based quantum structures for low threshold UVC lasers

Journal of Applied Physics, 126(22).

Development of Near UV Laser Diodes

2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID).

Interfacial Properties of Doped Semiconductor Materials Can Alter the Behavior of Pseudomonas aeruginosa Films

ACS Applied Electronic Materials, 1(8), 1641–1652.