https://orcid.org/0000-0002-8556-1178
III-Nitrides, Point defect control, Fermi level control, Passivation, silicon nitride, AlGaN, GaN, AlN, Schottky contacts, Ohmic contacts, Surface states, XPS
2021 journal article
High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing
Applied Physics Letters.
2020 journal article
Chemical treatment effects on Schottky contacts to metalorganic chemical vapor deposited n-type N-polar GaN
Journal of Applied Physics.
2020 journal article
Control of passivation and compensation in Mg-doped GaN by defect quasi Fermi level control
Journal of Applied Physics.
2020 journal article
High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates
Applied Physics Letters.
2020 journal article
Impact of impurity-based phonon resonant scattering on thermal conductivity of single crystalline GaN
Applied Physics Letters.
2020 journal article
Impact of the effective refractive index in AlGaN-based mid-UV laser structures on waveguiding
Japanese Journal of Applied Physics, 7.
2020 journal article
Modulating the Stress Response of E. coli at GaN Interfaces Using Surface Charge, Surface Chemistry, and Genetic Mutations
ACS Applied Bio Materials.
2020 journal article
Observation of carrier concentration dependent spintronic terahertz emission from n-GaN/NiFe heterostructures
Applied Physics Letters.
2020 journal article
Oxidative Stress Transcriptional Responses of Escherichia coli at GaN Interfaces
ACS Applied Bio Materials, 12.
2020 journal article
Pinning of energy transitions of defects, complexes, and surface states in AlGaN alloys
Applied Physics Letters.
2020 journal article
Role of polarity in SiN on Al/GaN and the pathway to stable contacts
Semiconductor Science and Technology, 2.
2020 journal article
Shallow Si donor in ion-implanted homoepitaxial AlN
Applied Physics Letters, 116(17), 172103.
2020 journal article
The 2020 UV emitter roadmap
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 53(50).
2020 journal article
The nature of the DX state in Ge-doped AlGaN
Applied Physics Letters.
2020 journal article
The role of chemical potential in compensation control in Si:AlGaN
Journal of Applied Physics.
2019 conference paper
Al Rich AlGaN Based APDs on Single Crystal AlN with Solar Blindness and Room Temperature Operation
2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID).
2019 journal article
Behavior of E. coli with Variable Surface Morphology Changes on Charged Semiconductor Interfaces
ACS Applied Bio Materials, 8.
2019 journal article
Design of AlGaN-based quantum structures for low threshold UVC lasers
Journal of Applied Physics.
2019 conference paper
Development of Near UV Laser Diodes
2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID).
2019 journal article
Interfacial Properties of Doped Semiconductor Materials Can Alter the Behavior of Pseudomonas aeruginosa Films
ACS Applied Electronic Materials, 8.
2019 journal article
Modified approach to modeling barrier inhomogeneity in Schottky diodes
Semiconductor Science and Technology, 1.
2019 article
The polarization field in Al-rich AlGaN multiple quantum wells
JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 58.
2018 journal article
6 kW/cm2 UVC laser threshold in optically pumped lasers achieved by controlling point defect formation
Applied Physics Express.
2018 journal article
A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition
Journal of Applied Physics, 124(11).
2018 conference paper
Au:Ga Alloyed Clusters to Enhance Al Contacts to P-type GaN
2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID).
2018 journal article
Bioelectronics communication: encoding yeast regulatory responses using nanostructured gallium nitride thin films
Nanoscale, 10(24), 11506–11516.
2018 journal article
Bulk and Surface Electronic Properties of Inorganic Materials: Tools to Guide Cellular Behavior
SMALL METHODS, 2(9).
2018 conference paper
Design Challenges for Mid-UV Laser Diodes
2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID).
2018 journal article
Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD
Applied Physics Letters, 112(6), 062102.
2018 conference paper
Electrical and Structural Characterization of Si Implanted Homoepitaxially Grown AlN
2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID).
2018 conference paper
Improving the Conductivity Limits in Si Doped Al Rich AlGaN
2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID).
2018 journal article
N- and P- type Doping in Al-rich AlGaN and AlN
ECS Transactions.
2018 journal article
Noninvasive Stimulation of Neurotypic Cells Using Persistent Photoconductivity of Gallium Nitride
ACS Omega.
2018 journal article
On compensation in Si-doped AlN
Applied Physics Letters.
2018 conference paper
On contacts to III-nitride deep-UV emitters
2018 3rd International Conference on Microwave and Photonics (ICMAP).
2018 journal article
Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(6).
2018 journal article
Point-Defect Nature of the Ultraviolet Absorption Band in AlN
Physical Review Applied, 9(5).
2018 journal article
Variably doped nanostructured gallium nitride surfaces can serve as biointerfaces for neurotypic PC12 cells and alter their behavior
RSC ADVANCES, 8(64), 36722–36730.
2017 journal article
Defect quasi Fermi level control-based CN reduction in GaN: Evidence for the role of minority carriers
Applied Physics Letters, 111(15), 152101.
2017 journal article
Defect-free Ni/GaN Schottky barrier behavior with high temperature stability
Applied Physics Letters, 110(1), 011603.
2017 journal article
High free carrier concentration in p-GaN grown on AlN substrates
Applied Physics Letters, 111(3), 032109.
2017 conference paper
Material considerations for the development of III-nitride power devices
ECS Transactions, 80(7), 29–36.
2017 journal article
Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN
Japanese Journal of Applied Physics, 56(10), 100302.
2017 journal article
On Ni/Au Alloyed Contacts to Mg-Doped GaN
Journal of Electronic Materials, 9.
2017 journal article
Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatment
Applied Physics Express, 10(7), 071001.
2017 journal article
Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN
Journal of Applied Physics, 122(24), 245702.
2016 thesis
A Study of Surfaces, Interfaces and Point Defect Control in III-Nitrides
2016 journal article
Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition
Journal of Applied Physics, 120(10), 105701.
2016 journal article
Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications
Applied Physics Letters, 108(26), 261106.
2016 journal article
High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies
Journal of Applied Physics, 119(14), 145702.
2016 journal article
Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control
Journal of Applied Physics, 120(18), 185704.
2016 journal article
The effect of illumination power density on carbon defect configuration in silicon doped GaN
Journal of Applied Physics, 120(23), 235705.
2015 journal article
A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN
Journal of Applied Physics, 117(24), 245702.
2015 journal article
Charge neutrality levels, barrier heights, and band offsets at polar AlGaN
Applied Physics Letters, 107(9), 091603.
2015 journal article
KOH based selective wet chemical etching of AlN, AlxGa1−xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode
Applied Physics Letters, 106(8), 082110.
2014 journal article
Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN
Applied Physics Letters, 105(22), 222101.
2014 journal article
Schottky contact formation on polar and non-polar AlN
Journal of Applied Physics, 116(19), 194503.
2014 journal article
The effect of polarity and surface states on the Fermi level at III-nitride surfaces
Journal of Applied Physics, 116(12).
2014 journal article
The effect of polarity and surface states on the Fermi level at III-nitride surfaces
Journal of Applied Physics, 116(12), -.
2012 conference paper
Isotherm behavior studies of silica nanoparticles: Role of surfactant concentration and particle size
Proceedings - ISPTS-1, 1st International Symposium on Physics and Technology of Sensors, 79–82.
2012 conference paper
Optical and I-V studies on Au-ZnO-ITO based UV-sensing devices
16th International Workshop on Physics of Semiconductor Devices.
2012 journal article
Sensing behavior study of silica-coated Ag nanoparticles deposited on glassy carbon toward nitrobenzene
Journal of Nanoparticle Research.
2012 journal article
Synthesis and Optical Characterization of ZnO Quantum Dots and Nanorods
Advanced Science, Engineering and Medicine.
2012 journal article
Synthesis and electrical behavior study of Mn3O4nanoceramic powder for low temperature NTC thermistor
Journal of Materials Science: Materials in Electronics, 23(10), 1891–1897.
2016 - present
2013 - 2016
2010 - 2012
2012 - 2016
2008 - 2010