Patrick Wellenius

Transparent IGZO-Based Logic Gates

Luo, H., Wellenius, P., Lunardi, L., & Muth, J. F. (2012, March 13). IEEE Electron Device Letters, Vol. 33, pp. 673–675.

Effect of oxygen pressure on the structure and luminescence of Eu‐doped Gd₂O₃ thin films

Wellenius, P., Smith, E. R., Wu, P. C., Everitt, H. O., & Muth, J. F. (2010, March 29). Physica Status Solidi (a).

Fast All-Transparent Integrated Circuits Based on Indium Gallium Zinc Oxide Thin-Film Transistors

Suresh, A., Wellenius, P., Baliga, V., Luo, H., Lunardi, L. M., & Muth, J. F. (2010, March 5). IEEE Electron Device Letters, Vol. 31, pp. 317–319.

Optimal composition of europium gallium oxide thin films for device applications

Wellenius, P., Smith, E. R., LeBoeuf, S. M., Everitt, H. O., & Muth, J. F. (2010, May 15). Journal of Applied Physics.

An Amorphous Indium–Gallium–Zinc–Oxide Active Matrix Electroluminescent Pixel

Wellenius, P., Suresh, A., Luo, H., Lunardi, L. M., & Muth, J. F. (2009, November 20). Journal of Display Technology, Vol. 5, pp. 438–445.

Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectric

Suresh, A., Novak, S., Wellenius, P., Misra, V., & Muth, J. F. (2009, March 23). Applied Physics Letters, Vol. 94.

Bright, low voltage europium doped gallium oxide thin film electroluminescent devices

Wellenius, P., Suresh, A., & Muth, J. F. (2008, January 14). Applied Physics Letters.

A visible transparent electroluminescent europium doped gallium oxide device

Wellenius, P., Suresh, A., Foreman, J. V., Everitt, H. O., & Muth, J. F. (2007, August 15). Materials Science and Engineering B.

High performance transparent thin film transistors based on indium gallium zinc oxide as the channel material

Suresh, A., Wellenius, P., & Muth, J. F. (2007, January 1).

Planar ZnO ultraviolet modulator

Zhang, X. Y., Dhawan, A., Wellenius, P., Suresh, A., & Muth, J. F. (2007, August 13). Applied Physics Letters.

Room temperature pulsed laser deposited indium gallium zinc oxide channel based transparent thin film transistors

Suresh, A., Wellenius, P., Dhawan, A., & Muth, J. (2007, March 19). Applied Physics Letters.

Transparent, high mobility InGaZnO thin films deposited by PLD

Suresh, A., Gollakota, P., Wellenius, P., Dhawan, A., & Muth, J. F. (2007, April 6). Thin Solid Films.

Optical characterization of Eu-doped β-Ga2O3 thin films

Applied Physics Letters, 88(22), 221906.

Origins of Parasitic Emissions from 353 nm AlGaN-based Ultraviolet Light Emitting Diodes over SiC Substrates

Park, J.-S., Fothergill, D. W., Wellenius, P., Bishop, S. M., Muth, J. F., & Davis, R. F. (2006, May 1). Japanese Journal of Applied Physics.