2012 journal article
Transparent IGZO-Based Logic Gates
IEEE ELECTRON DEVICE LETTERS, 33(5), 673–675.
Contributors: H. Luo n, *, L. Lunardi n & J. Muth n
2010 journal article
Effect of oxygen pressure on the structure and luminescence of Eu-doped Gd2O3 thin films
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 207(8), 1949–1953.
2010 journal article
Fast All-Transparent Integrated Circuits Based on Indium Gallium Zinc Oxide Thin-Film Transistors
IEEE ELECTRON DEVICE LETTERS, 31(4), 317–319.
Contributors: A. Suresh*, n, V. Baliga n, H. Luo n, L. Lunardi n & J. Muth n
2010 journal article
Optimal composition of europium gallium oxide thin films for device applications
JOURNAL OF APPLIED PHYSICS, 107(10).
2009 journal article
An Amorphous Indium-Gallium-Zinc-Oxide Active Matrix Electroluminescent Pixel
JOURNAL OF DISPLAY TECHNOLOGY, 5(12), 438–445.
Contributors: A. Suresh n, H. Luo n, L. Lunardi n & J. Muth n n,
2009 journal article
Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectric
APPLIED PHYSICS LETTERS, 94(12).
2008 article
A visible transparent electroluminescent europium doped gallium oxide device
Wellenius, P., Suresh, A., Foreman, J. V., Everitt, H. O., & Muth, J. F. (2008, January 15). MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Vol. 146, pp. 252–255.
2008 journal article
Bright, low voltage europium doped gallium oxide thin film electroluminescent devices
APPLIED PHYSICS LETTERS, 92(2).
2008 article
Transparent, high mobility of InGaZnO thin films deposited by PLD
Suresh, A., Gollakota, P., Wellenius, P., Dhawan, A., & Muth, J. F. (2008, February 15). THIN SOLID FILMS, Vol. 516, pp. 1326–1329.
2007 article
High performance transparent thin film transistors based on indium gallium zinc oxide as the channel material
2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, pp. 587–590.
2007 journal article
Planar ZnO ultraviolet modulator
APPLIED PHYSICS LETTERS, 91(7).
2007 journal article
Room temperature pulsed laser deposited indium gallium zinc oxide channel based transparent thin film transistors
APPLIED PHYSICS LETTERS, 90(12).
2006 journal article
Optical characterization of Eu-doped β-Ga2O3 thin films
Applied Physics Letters, 88(22), 221906.
Contributors: P. Gollakota n, A. Dhawan n, n, L. Lunardi n , J. Muth n, Y. Saripalli n, H. Peng *, H. Everitt *
2006 journal article
Origins of parasitic emissions from 353 nm AlGaN-based ultraviolet light emitting diodes over SiC substrates
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45(5A), 4083–4086.
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