Qiang Guo

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

Breckenridge, M. H., Bagheri, P., Guo, Q., Sarkar, B., Khachariya, D., Pavlidis, S., … Sitar, Z. (2021, March 15). Applied Physics Letters, Vol. 118.

Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

Washiyama, S., Mirrielees, K. J., Bagheri, P., Baker, J. N., Kim, J.-H., Guo, Q., … Sitar, Z. (2021, January 25). Applied Physics Letters, Vol. 118.

Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength

Kirste, R., Sarkar, B., Reddy, P., Guo, Q., Collazo, R., & Sitar, Z. (2021, December 14). Journal of Materials Research/Pratt's Guide to Venture Capital Sources, Vol. 12, pp. 4638–4664.

Structural and optical properties of self-assembled AlN nanowires grown on SiO ₂ /Si substrates by molecular beam epitaxy

Gačević, Ž., Grandal, J., Guo, Q., Kirste, R., Varela, M., Sitar, Z., & García, M. A. S. (2021, February 3). Nanotechnology.

Quasi-phase-matched second harmonic generation of UV light using AlN waveguides

Alden, D., Troha, T., Kirste, R., Mita, S., Guo, Q., Hoffmann, A., … Sitar, Z. (2019, March 11). Applied Physics Letters, Vol. 114.

The polarization field in Al-rich AlGaN multiple quantum wells

Guo, Q., Kirste, R., Mita, S., Tweedie, J., Reddy, P., Washiyama, S., … Sitar, Z. (2019, May 9). Japanese Journal of Applied Physics, Vol. 58.

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

Bryan, I., Bryan, Z., Washiyama, S., Reddy, P., Gaddy, B., Sarkar, B., … Sitar, Z. (2018, February 5). Applied Physics Letters, Vol. 112, p. 062102.

The influence of point defects on the thermal conductivity of AlN crystals

Rounds, R., Sarkar, B., Alden, D., Guo, Q., Klump, A., Hartmann, C., … Collazo, R. (2018, May 11). Journal of Applied Physics, Vol. 123.