Works (8)
Updated: July 5th, 2023 15:35
2021 journal article
High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN
APPLIED PHYSICS LETTERS, 118(11).
Contributors: M. Breckenridge n, P. Bagheri n, n, B. Sarkar n, D. Khachariya n, S. Pavlidis n, J. Tweedie*, R. Kirste*
open access via aip.scitation.org (publisher PDF)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: March 17, 2021
2021 journal article
Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping
APPLIED PHYSICS LETTERS, 118(4).
Contributors: S. Washiyama n, K. Mirrielees n, P. Bagheri n, J. Baker n, J. Kim n, n, R. Kirste*, Y. Guan n
Sources: Web Of Science, NC State University Libraries, ORCID
Added: March 29, 2021
2021 article
Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength
Kirste, R., Sarkar, B., Reddy, P., Guo, Q., Collazo, R., & Sitar, Z. (2021, December 15). JOURNAL OF MATERIALS RESEARCH, Vol. 12.
Contributors: R. Kirste n, B. Sarkar n, P. Reddy n , n, R. Collazo n & Z. Sitar n
author keywords: Laser; Optoelectronic; Electrical properties; Optical properties; Dopant
Sources: Web Of Science, NC State University Libraries, ORCID
Added: January 3, 2022
2021 journal article
Structural and optical properties of self-assembled AlN nanowires grown on SiO2/Si substrates by molecular beam epitaxy
NANOTECHNOLOGY, 32(19).
author keywords: AlN nanowires; self-assembled; molecular beam epitaxy; structural and optical properties
TL;DR:
It is shown that the self-assembled AlN nanowires grown by plasma-assisted molecular beam epitaxy (PAMBE) on SiO2/Si (111) substrates grow nearly strain-free, preferentially perpendicular to the amorphous SiO 2 interlayer and without epitaxial relationship to Si(111) substrate, as expected.
(via Semantic Scholar)
Source: Web Of Science
Added: March 15, 2021
2019 journal article
Quasi-phase-matched second harmonic generation of UV light using AlN waveguides
APPLIED PHYSICS LETTERS, 114(10).
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: April 2, 2019
2019 article
The polarization field in Al-rich AlGaN multiple quantum wells
Guo, Q., Kirste, R., Mita, S., Tweedie, J., Reddy, P., Washiyama, S., … Sitar, Z. (2019, June 1). JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 58.
Contributors: n, R. Kirste n, S. Mita n, J. Tweedie n, P. Reddy n , S. Washiyama n, M. Breckenridge n, R. Collazo n , Z. Sitar n
Sources: Web Of Science, NC State University Libraries, ORCID
Added: July 29, 2019
2018 journal article
Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD
APPLIED PHYSICS LETTERS, 112(6).
Contributors: I. Bryan n, Z. Bryan n, S. Washiyama n, P. Reddy* , B. Gaddy n, B. Sarkar n, M. Breckenridge n, n
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018
2018 journal article
The influence of point defects on the thermal conductivity of AlN crystals
JOURNAL OF APPLIED PHYSICS, 123(18).
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
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