Works (8)

Updated: July 5th, 2023 15:35

2021 journal article

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

APPLIED PHYSICS LETTERS, 118(11).

By: M. Breckenridge n, P. Bagheri n, Q. Guo n, B. Sarkar n, D. Khachariya n, S. Pavlidis n, J. Tweedie*, R. Kirste* ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: March 17, 2021

2021 journal article

Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

APPLIED PHYSICS LETTERS, 118(4).

By: S. Washiyama n, K. Mirrielees n, P. Bagheri n, J. Baker n, J. Kim n, Q. Guo n, R. Kirste*, Y. Guan n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: March 29, 2021

2021 article

Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength

Kirste, R., Sarkar, B., Reddy, P., Guo, Q., Collazo, R., & Sitar, Z. (2021, December 15). JOURNAL OF MATERIALS RESEARCH, Vol. 12.

By: R. Kirste n, B. Sarkar n, P. Reddy n, Q. Guo n, R. Collazo n & Z. Sitar n

co-author countries: United States of America 🇺🇸
author keywords: Laser; Optoelectronic; Electrical properties; Optical properties; Dopant
Sources: Web Of Science, ORCID
Added: January 3, 2022

2021 journal article

Structural and optical properties of self-assembled AlN nanowires grown on SiO2/Si substrates by molecular beam epitaxy

NANOTECHNOLOGY, 32(19).

By: Z. Gacevic, J. Grandal, Q. Guo*, R. Kirste*, M. Varela, Z. Sitar*, M. Sanchez Garcia

author keywords: AlN nanowires; self-assembled; molecular beam epitaxy; structural and optical properties
Source: Web Of Science
Added: March 15, 2021

2019 journal article

Quasi-phase-matched second harmonic generation of UV light using AlN waveguides

APPLIED PHYSICS LETTERS, 114(10).

By: D. Alden n, T. Troha*, R. Kirste n, S. Mita n, Q. Guo n, A. Hoffmann*, M. Zgonik*, R. Collazo n, Z. Sitar n

co-author countries: Germany 🇩🇪 Slovenia 🇸🇮 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: April 2, 2019

2019 article

The polarization field in Al-rich AlGaN multiple quantum wells

Guo, Q., Kirste, R., Mita, S., Tweedie, J., Reddy, P., Washiyama, S., … Sitar, Z. (2019, June 1). JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 58.

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: July 29, 2019

2018 journal article

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

APPLIED PHYSICS LETTERS, 112(6).

By: I. Bryan n, Z. Bryan n, S. Washiyama n, P. Reddy*, B. Gaddy n, B. Sarkar n, M. Breckenridge n, Q. Guo n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2018 journal article

The influence of point defects on the thermal conductivity of AlN crystals

JOURNAL OF APPLIED PHYSICS, 123(18).

By: R. Rounds n, B. Sarkar n, D. Alden n, Q. Guo n, A. Klump n, C. Hartmann*, T. Nagashima*, R. Kirste n ...

co-author countries: Germany 🇩🇪 Japan 🇯🇵 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

Citation Index includes data from a number of different sources. If you have questions about the sources of data in the Citation Index or need a set of data which is free to re-distribute, please contact us.

Certain data included herein are derived from the Web of Science© and InCites© (2024) of Clarivate Analytics. All rights reserved. You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.