@article{zhao_davis_2021, title={A Virtual Platform for Object Detection Systems}, ISSN={["2164-0157"]}, DOI={10.1109/3DIC52383.2021.9687602}, abstractNote={Computer vision is increasingly effective and important in many applications, including disease diagnosis, sports, and autonomous-driving. Visual recognition tasks, such as image classification and object detection, are the key of many of these applications, and recent developments in convolutional neural networks (CNNs) have made outstanding leaps in performance. Therefore, optimizing the data-flow between the image sensor and CNNs now constitute the majority of the effort in computer vision system design. System performance is sensitive to the qualities of the image sensor and CNN hardware accelerator. We focus on determining the influence of the sensor and accelerator on the overall performance and power of an object detection inference task. Because the relationship between image sensor quality and CNN performance is complex, we use image quality as a bridge when evaluating system performance. Developing a new product is very expensive and time consuming. This paper will offer an virtual platform for object detection systems, and each component in the system will be simulated by a proper power model and a behavior model. The power, performance, and area of the complete system will be predicted to help designers optimize object detection systems.}, journal={2021 IEEE INTERNATIONAL 3D SYSTEMS INTEGRATION CONFERENCE (3DIC)}, author={Zhao, Qianli and Davis, W. Rhett}, year={2021} }
 @misc{bocian_lindsey_liu_yesseri_misra_zhao_li_surthi_loewe_2007, title={High temperature attachment of organic molecules to substrates}, volume={7,223,628}, number={2007 May 29}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Bocian, D. F. and Lindsey, J. and Liu, Z. and Yesseri, A. A. and Misra, V. and Zhao, Q. and Li, Q. and Surthi, S. and Loewe, R. S.}, year={2007} }
 @article{mathur_gowda_li_surthi_zhao_misra_2005, title={Properties of functionalized redox-active monolayers on thin silicon dioxide - A study of the. dependence of retention time on oxide thickness}, volume={4}, ISSN={["1941-0085"]}, DOI={10.1109/TNANO.2004.842056}, abstractNote={Self-assembled monolayers of redox-active molecules were formed on varying thickness of silicon dioxide (SiO/sub 2/). Cyclic voltammetry (CyV) and impedance spectroscopy (capacitance-voltage and conductance-voltage) techniques were used to characterize these structures. The charge retention properties of these molecule-oxide-silicon capacitor structures were studied by applying oxidizing voltages in two successive CyV scans without applying a reducing voltage in between the two scans. A variation of this technique, wherein a reducing voltage is applied in the second scan, was also employed. The wait time between the two scans was varied from 0 to 300 s. The number of molecules oxidized (or reduced) in the second scan increased (or decreased) with increasing wait time, which is attributed to increasing charge leakage with increasing time. The retention properties of these structures were studied and correlated to increasing oxide thickness. It was observed that the retention times increased with increasing oxide thickness if the voltage applied during the wait time was in between the oxidation and reduction peak voltages. The molecular scalability and ability to tune the retention times by varying the oxide thickness make these Si/molecular hybrid devices attractive candidates for next-generation memory applications.}, number={2}, journal={IEEE TRANSACTIONS ON NANOTECHNOLOGY}, author={Mathur, G and Gowda, S and Li, QL and Surthi, S and Zhao, Q and Misra, V}, year={2005}, month={Mar}, pages={278–283} }
 @article{zhao_luo_surthi_li_mathur_gowda_larson_johnson_misra_2005, title={Redox-active monolayers on nano-scale silicon electrodes}, volume={16}, ISSN={["1361-6528"]}, DOI={10.1088/0957-4484/16/2/013}, abstractNote={Uniform arrays of nano-scale electrolyte–molecule–silicon capacitors have been successfully fabricated. This was done by a combination of reactive ion etch and a selective wet etch through an anodic aluminium oxide mask to form nano-holes in silicon oxide/silicon nitride insulator layers on silicon. Self-assembled monolayers of 4-ferrocenylbenzyl alcohol were then attached to the exposed silicon surfaces at the bottom of the nano-holes. Characterization by conventional capacitance and conductance techniques showed very high capacitance and conductance peaks near −0.6 V, that were attributed to the charging and discharging of electrons into and from discrete levels in the monolayer owing to the presence of the redox-active ferrocenes.}, number={2}, journal={NANOTECHNOLOGY}, author={Zhao, Q and Luo, Y and Surthi, S and Li, QL and Mathur, G and Gowda, S and Larson, PR and Johnson, MB and Misra, V}, year={2005}, month={Feb}, pages={257–261} }
 @article{li_mathur_gowda_surthi_zhao_yu_lindsey_bocian_misra_2004, title={Multibit memory using self-assembly of mixed ferrocene/porphyrin monolayers on silicon}, volume={16}, ISSN={["1521-4095"]}, DOI={10.1002/adma.200305680}, abstractNote={An alternative strategy for achieving multi‐bit functionality, which uses mixed self‐assembled monolayers of a benzyl alcohol‐tethered ferrocene (Fc‐BzOH) and a benzyl alcohol‐tethered porphyrin (Por‐BzOH) on silicon surfaces to achieve a four‐state (2‐bit) memory element, is presented. The four states include the neutral state and three distinct cationic states obtained upon oxidation of Fc‐BzOH (monopositive) and Por‐BzOH (monopositive, dipositive) molecules. Conventional cyclic voltammetry, capacitance, and conductance methods have been used to characterize the mixed monolayer.}, number={2}, journal={ADVANCED MATERIALS}, author={Li, QL and Mathur, G and Gowda, S and Surthi, S and Zhao, Q and Yu, LH and Lindsey, JS and Bocian, DF and Misra, V}, year={2004}, month={Jan}, pages={133-+} }
 @article{li_surthi_mathur_gowda_zhao_sorenson_tenent_muthukumaran_lindsey_misra_2004, title={Multiple-bit storage properties of porphyrin monolayers on SiO2}, volume={85}, ISSN={["1077-3118"]}, DOI={10.1063/1.1782254}, abstractNote={Hybrid molecule-silicon capacitors have been fabricated by the self-assembly of a monolayer of porphyrin molecules on a silicon oxide surface. The porphyrin employed [5-(4-dihydroxyphosphorylphenyl)-10,15,20-trimesitylporphinatozinc(II)] attaches to silicon oxide via a phosphonate linkage. Cyclic voltammetry current and capacitance/conductance measurements have been used to characterize the capacitors. The presence of multiple distinct peaks in current density and capacitance/conductance measurements are associated with oxidation and reduction of the molecular monolayer. The charge-storage states of the capacitor indicate applicability for use in multiple-bit memory devices.}, number={10}, journal={APPLIED PHYSICS LETTERS}, author={Li, QL and Surthi, S and Mathur, G and Gowda, S and Zhao, Q and Sorenson, TA and Tenent, RC and Muthukumaran, K and Lindsey, JS and Misra, V}, year={2004}, month={Sep}, pages={1829–1831} }
 @article{liu_yasseri_loewe_lysenko_malinovskii_zhao_surthi_li_misra_lindsey_et al._2004, title={Synthesis of porphyrins bearing hydrocarbon tethers and facile covalent attachment to Si(100)}, volume={69}, ISSN={["0022-3263"]}, DOI={10.1021/jo049439q}, abstractNote={The use of redox-active molecules as the active storage elements in memory chips requires the ability to attach the molecules to an electroactive surface in a reliable and robust manner. To explore the use of porphyrins tethered to silicon via carbosilane linkages, 17 porphyrins have been synthesized. Fourteen porphyrins bear a tether at a single meso site, and three porphyrins bear functional groups at two beta sites for possible two-point attachment. Two high-temperature processing methods (400 degrees C under inert atmosphere) have been developed for rapid (minutes), facile covalent attachment to Si platforms. The high-temperature processing conditions afford attachment either by direct deposition of a dilute solution (1 microM-1 mM) of the porphyrin sample onto the Si substrate or sublimation of a neat sample onto the Si substrate. The availability of this diverse collection of porphyrins enables an in-depth examination of the effects of the tether (length, composition, terminal functional group, number of tethers) and steric bulk of nonlinking substituents on the information-storage properties of the porphyrin monolayers obtained upon attachment to silicon. Attachment proceeds readily with a wide variety of hydrocarbon tethers, including 2-(trimethylsilyl)ethynyl, vinyl, allyl, or 3-butenyl directly appended to the porphyrin and iodo, bromomethyl, 2-(trimethylsilyl)ethynyl, ethynyl, vinyl, or allyl appended to the 4-position of a meso-phenyl ring. No attachment occurs with substituents such as phenyl, p-tolyl, mesityl, or ethyl. Collectively, the studies show that the high-temperature attachment procedure (1) has broad scope encompassing diverse functional groups, (2) tolerates a variety of arene substituents, and (3) does not afford indiscriminate attachment. The high-temperature processing conditions are ideally suited for use in fabrication of hybrid molecular/semiconductor circuitry.}, number={17}, journal={JOURNAL OF ORGANIC CHEMISTRY}, author={Liu, ZM and Yasseri, AA and Loewe, RS and Lysenko, AB and Malinovskii, VL and Zhao, Q and Surthi, S and Li, QL and Misra, V and Lindsey, JS and et al.}, year={2004}, month={Aug}, pages={5568–5577} }