@article{jin_aggarwal_wei_nori_kumar_ponarin_smirnov_narayan_narayan_2011, title={Intrinsic Room-Temperature Ferromagnetic Properties of Ni-Doped ZnO Thin Films}, volume={42}, ISSN={1073-5623 1543-1940}, url={http://dx.doi.org/10.1007/S11661-010-0479-9}, DOI={10.1007/s11661-010-0479-9}, number={11}, journal={Metallurgical and Materials Transactions A}, publisher={Springer Science and Business Media LLC}, author={Jin, C. and Aggarwal, R. and Wei, W. and Nori, S. and Kumar, D. and Ponarin, D. and Smirnov, A. I. and Narayan, J. and Narayan, R. J.}, year={2011}, month={Nov}, pages={3250–3254} }
 @article{yang_jin_aggarwal_narayan_narayan_2010, title={On growth of epitaxial vanadium oxide thin film on sapphire (0001)}, volume={25}, ISSN={["2044-5326"]}, DOI={10.1557/jmr.2010.0059}, abstractNote={We report the characteristics of epitaxial growth and properties of vanadium oxide (VO2) thin films on sapphire (0001) substrates. Pulsed laser deposition was used to grow (002) oriented VO2 films on sapphire (0001). Transmission electron microscopy studies showed that the orientation relationship between the substrate and the thin film is: (002)f2∥(0006)sub3 and [010]f2 ∥sub. It was also established that VO2 has three different orientations in the film plane which are rotated by 60° from each other. The epitaxial growth of vanadium oxide on sapphire (0001) has been explained in the framework of domain matching epitaxy (DME). Electrical resistivity measurements as a function of temperature showed a sharp transition with a hysteresis width ˜5 °C, and large resistance change (˜1.5 × 104) from the semiconductor phase to the metal phase. It is interesting to note that in spite of large angle twin boundaries in these VO2 films, the SMT characteristics are better than those observed for polycrystalline films. The higher width of thermal hysteresis for the VO2 film on c-sapphire compared to a bulk single VO2 crystal and a single-crystal VO2 film on r-sapphire can be attributed to the existence of these large-angle twin grain boundaries. These findings can provide insight into the phase transformation characteristics of VO2, which has important applications in switching and memory devices.}, number={3}, journal={JOURNAL OF MATERIALS RESEARCH}, author={Yang, Tsung-Han and Jin, Chunming and Aggarwal, Ravi and Narayan, R. J. and Narayan, Jay}, year={2010}, month={Mar}, pages={422–426} }
 @article{miller_aggarwal_doraiswamy_lin_lee_narayan_2009, title={Laser micromachining for biomedical applications}, volume={61}, ISSN={["1047-4838"]}, DOI={10.1007/s11837-009-0130-7}, number={9}, journal={JOM}, author={Miller, Philip R. and Aggarwal, Ravi and Doraiswamy, Anand and Lin, Yi Jen and Lee, Yuan-Shin and Narayan, Roger J.}, year={2009}, month={Sep}, pages={35–40} }
 @article{aggarwal_nori_jin_pant_trichy_kumar_narayan_narayan_2009, title={Magnetic properties and their dependence on deposition parameters of Co/Al2O3 multilayers grown by pulsed laser deposition}, volume={57}, ISSN={["1359-6454"]}, DOI={10.1016/j.actamat.2009.01.018}, abstractNote={Co/Al2O3 multilayered thin films were grown on Si (111) substrates by pulsed laser deposition (PLD) at temperatures from room temperature (RT) to 600 °C. The Co/Al2O3 multilayered thin film grown at RT contains continuous cobalt layers in alumina matrices, with no evidence of island formation. On the other hand, cobalt showed a tendency to form islands in alumina matrices for growth temperatures in the range of 300–600 °C. All the Co/Al2O3 multilayered thin films showed ferromagnetic behavior up to RT. It was observed that variations in the deposition parameters can significantly influence the magnetic properties of Co/Al2O3 multilayers. Depending on the temperature and pulse rate, RT coercivities in the 50–300 Oe range were observed. Films deposited at 600 °C using a laser pulse rate of 10 Hz exhibited a decrease of coercivity with increasing measurement temperature. On the other hand, films deposited at 600 °C using a reduced pulse rate of 2 Hz demonstrated an “anomalous” relationship between low-temperature coercivity and temperature. In these films, coercivity exhibited a weak tendency to increase with temperature. Squareness (Mr/Ms) of the hysteresis loops and its dependence on the temperature was also shown to be strongly affected by the deposition parameters. These observations have been rationalized on the basis of two competing magnetic anisotropies that act along different directions in the material.}, number={6}, journal={ACTA MATERIALIA}, author={Aggarwal, Ravi and Nori, Sudhakar and Jin, Chunming and Pant, Punam and Trichy, Gopinath R. and Kumar, Dhananjay and Narayan, J. and Narayan, Roger J.}, year={2009}, month={Apr}, pages={2040–2046} }
 @article{boehm_narayan_aggarwal_monteiro-riviere_lacour_2009, title={Stretchable diamond-like carbon microstructures for biomedical applications}, volume={61}, ISSN={["1543-1851"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000269953700010&KeyUID=WOS:000269953700010}, DOI={10.1007/s11837-009-0134-3}, number={9}, journal={JOM}, author={Boehm, Ryan and Narayan, Roger J. and Aggarwal, Ravi and Monteiro-Riviere, Nancy A. and Lacour, Stephanie P.}, year={2009}, month={Sep}, pages={53–58} }
 @article{pant_budai_aggarwal_narayan_narayan_2009, title={Thin film epitaxy and structure property correlations for non-polar ZnO films}, volume={57}, ISSN={["1873-2453"]}, DOI={10.1016/j.actamat.2009.05.031}, abstractNote={Heteroepitaxial growth and strain relaxation were investigated in non-polar a-plane (1 1 −2 0)ZnO films grown on r-plane (1 0 −1 2)sapphire substrates in the temperature range 200–700 °C by pulsed laser deposition. The lattice misfit in the plane of the film for this orientation varied from −1.26% in [0 0 0 1] to −18.52% in the [−1 1 0 0] direction. The alignment of (1 1 −2 0)ZnO planes parallel to (1 0 −1 2)sapphire planes was confirmed by X-ray diffraction θ−2θ scans over the entire temperature range. X-ray ϕ-scans revealed the epitaxial relationship:[0 0 0 1]ZnO‖[−1 1 0 1]sap; [–1 1 0 0]ZnO‖[−1 −1 2 0]sap. Depending on the growth temperature, variations in the structural, optical and electrical properties were observed in the grown films. Room temperature photoluminescence for films grown at 700 °C shows a strong band-edge emission. The ratio of the band-edge emission to green band emission is 135:1, indicating reduced defects and excellent optical quality of the films. The resistivity data for the films grown at 700 °C shows semiconducting behavior with room temperature resistivity of 2.2 × 10−3 Ω-cm.}, number={15}, journal={ACTA MATERIALIA}, author={Pant, P. and Budai, J. D. and Aggarwal, R. and Narayan, Roger J. and Narayan, J.}, year={2009}, month={Sep}, pages={4426–4431} }
 @article{aggarwal_jin_pant_narayan_narayan_2008, title={Growth of biepitaxial zinc oxide thin films on silicon (100) using yttria-stabilized zirconia buffer layer}, volume={93}, ISSN={["0003-6951"]}, DOI={10.1063/1.3050529}, abstractNote={In this work, an approach for integrating zinc oxide thin films with Si(100) substrates using an epitaxial tetragonal yttria-stabilized zirconia buffer layer is reported. Selected area electron diffraction measurements revealed the following epitaxial relationship: [110]YSZ∥[100]Si and (001)YSZ∥(001)Si. X-ray diffraction studies demonstrated that subsequent growth of the zinc oxide thin film on the yttria-stabilized zirconia buffer layer occurred with the following epitaxial relationship: (0002)ZnO∥(001)YSZ. The full width at half maximum value for the (0002) peak of zinc oxide was small (∼0.16°), which indicated good crystalline quality. Transmission electron microscopy revealed that the zinc oxide thin film grew epitaxially on an yttria-stabilized zirconia buffer layer in two different orientations, where one orientation was rotated by 30° from the other. The orientation relationship in this case was [101¯0]ZnO∥[100]YSZ or [21¯1¯0]ZnO∥[100]YSZ and (0002)ZnO∥(001)YSZ. The biepitaxial growth of the zinc oxide thin film has been explained in the framework of domain matching epitaxy. Optical emission measurements showed a strong excitonic emission peak from the zinc oxide thin film at ∼377 nm. Minimal green band emission in the photoluminescence spectrum indicated that the concentration of point defects was low. Integration of epitaxial zinc oxide thin films with Si(100) substrates is an important step toward developing practical applications of zinc oxide in a variety of optoelectronic devices.}, number={25}, journal={Applied Physics Letters}, author={Aggarwal, Ravi and Jin, Chunming and Pant, Punam and Narayan, Jagdish and Narayan, Roger J.}, year={2008}, month={Dec}, pages={251905} }
 @article{narayan_aggarwal_wei_jin_monteiro-riviere_crombez_shen_2008, title={Mechanical and biological properties of nanoporous carbon membranes}, volume={3}, ISSN={["1748-605X"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000258916500020&KeyUID=WOS:000258916500020}, DOI={10.1088/1748-6041/3/3/034107}, abstractNote={Implantable blood glucose sensors have inadequate membrane–tissue interfaces for long term use. Biofouling and inflammation processes restrict biosensor membrane stability. An ideal biosensor membrane material must prevent protein adsorption and exhibit cell compatibility. In addition, a membrane must exhibit high porosity and low thickness in order to allow the biosensor to respond to analyte fluctuations. In this study, the structural, mechanical and biological properties of nanoporous alumina membranes coated with diamond-like carbon thin films were examined using scanning probe microscopy, nanoindentation and MTT viability assay. We anticipate that this novel membrane material could find use in immunoisolation devices, kidney dialysis membranes and other medical devices encountering biocompatibility issues that limit in vivo function.}, number={3}, journal={BIOMEDICAL MATERIALS}, author={Narayan, Roger J. and Aggarwal, Ravi and Wei, Wei and Jin, Chunming and Monteiro-Riviere, Nancy A. and Crombez, Rene and Shen, Weidian}, year={2008}, month={Sep} }
 @article{karakoti_monteiro-riviere_aggarwal_davis_narayan_self_mcginnis_seal_2008, title={Nanoceria as antioxidant: Synthesis and biomedical applications}, volume={60}, ISSN={["1543-1851"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000253852900008&KeyUID=WOS:000253852900008}, DOI={10.1007/s11837-008-0029-8}, abstractNote={The therapeutic application of nanomaterials has been a focus of numerous studies in the past decade. Due to its unique redox properties, cerium oxide (ceria) is finding widespread use in the treatment of medical disorders caused by the reactive oxygen intermediates (ROI). The radical-scavenging role of ceria nanoparticles (nanoceria) have been established, as well as the autocatalytic ability of nanoceria to regenerate under various environmental conditions. The synthesis of nanoceria in biocompatible media has also been reported along with cell viability in order to determine the potential use of nanoceria in biomedical applications.}, number={3}, journal={JOM}, author={Karakoti, A. S. and Monteiro-Riviere, N. A. and Aggarwal, R. and Davis, J. P. and Narayan, R. J. and Self, W. T. and McGinnis, J. and Seal, S.}, year={2008}, month={Mar}, pages={33–37} }
 @article{jin_nori_wei_aggarwal_kumar_narayan_2008, title={Pulsed Laser Deposition of Nanoporous Cobalt Thin Films}, volume={8}, ISSN={["1533-4899"]}, DOI={10.1166/jnn.2008.483}, abstractNote={Nanoporous cobalt thin films were deposited on anodized aluminum oxide (AAO) membranes at room temperature using pulsed laser deposition. Scanning electron microscopy demonstrated that the nanoporous cobalt thin films retained the monodisperse pore size and high porosity of the anodized
 aluminum oxide substrates. Temperature- and field-dependent magnetic data obtained between 10 K and 350 K showed large hysteresis behavior in these materials. The increase of coercivity values was larger for nanoporous cobalt thin films than for multilayered cobalt/alumina thin films. The
 average diameter of the cobalt nanograins in the nanoporous cobalt thin films was estimated to be ∼5 nm for blocking temperatures near room temperature. These results suggest that pulsed laser deposition may be used to fabricate nanoporous magnetic materials with unusual properties for
 biosensing, drug delivery, data storage, and other technological applications.}, number={11}, journal={JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY}, author={Jin, Chunming and Nori, Sudhakar and Wei, Wei and Aggarwal, Ravi and Kumar, Dhananjay and Narayan, Roger J.}, year={2008}, month={Nov}, pages={6043–6047} }
 @misc{aggarwal_narayan_xiao_geohegan, title={Fabrication of Ag-tetracyanoquinodimethane nanostructures using ink-jet printing/vapor-solid chemical reaction process}, volume={26}, number={6}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Aggarwal, R. and Narayan, R. J. and Xiao, K. and Geohegan, D. B.}, pages={L48–52} }