Works (243)

Updated: February 10th, 2024 05:00

2024 journal article

Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activation

JOURNAL OF APPLIED PHYSICS, 135(2).

By: K. Huynh*, Y. Wang*, M. Liao*, J. Tweedie*, P. Reddy*, M. Breckenridge n, R. Collazo n, Z. Sitar n ...

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
Sources: ORCID, Web Of Science
Added: January 28, 2024

2023 journal article

(Invited) Understanding Mg-Related Defects for Vertical GaN p-n Junction Structures Via p-Type Ion Implantation

ECS Meeting Abstracts.

By: M. Goorsky, M. Liao, K. Huynh, Y. Wang, J. Tweedie, Z. Sitar, R. Collazo*, K. Sierakowski, M. Bockowski, X. Huang

Source: ORCID
Added: February 9, 2024

2023 article

Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing

Stein, S. R., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., Tweedie, J., … Pavlidis, S. (2023, December 12). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12.

By: S. Stein n, D. Khachariya*, W. Mecouch*, S. Mita*, P. Reddy*, J. Tweedie n, K. Sierakowski*, G. Kamler* ...

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
author keywords: Schottky diodes; Annealing; Ion implantation; Schottky barriers; P-n junctions; Resistance; Gallium nitride; junction barrier Schottky (JBS) diode; Mg activation; p-n diode; power semiconductor device; Schottky contact; ultrahigh-pressure annealing (UHPA); vertical GaN
Sources: Web Of Science, ORCID
Added: January 2, 2024

2023 journal article

Anderson transition in compositionally graded p-AlGaN

JOURNAL OF APPLIED PHYSICS, 134(19).

By: S. Rathkanthiwar n, P. Reddy*, C. Quinones n, J. Loveless n, M. Kamiyama n, P. Bagheri n, D. Khachariya*, T. Eldred n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: November 16, 2023

2023 article

Chemical Vapor Deposition of Monolayer MoS2 on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction Optoelectronics

Sengupta, R., Vaidya, S., Szymanski, D., Khachariya, D., Bockowski, M., Kamler, G., … Pavlidis, S. (2023, March 24). ACS APPLIED NANO MATERIALS, Vol. 3.

By: R. Sengupta n, S. Vaidya n, D. Szymanski n, D. Khachariya*, M. Bockowski*, G. Kamler*, P. Reddy*, Z. Sitar n, R. Collazo n, S. Pavlidis n

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
author keywords: N-polar; gallium nitride; chemomechanical polishing; MoS 2; monolayer; chemical vapor deposition
Sources: Web Of Science, ORCID
Added: March 25, 2023

2023 journal article

Demonstration of near-ideal Schottky contacts to Si-doped AlN

APPLIED PHYSICS LETTERS, 123(17).

By: C. Quinones n, D. Khachariya*, P. Bagheri n, P. Reddy*, S. Mita*, R. Kirste*, S. Rathkanthiwar n, J. Tweedie* ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: October 25, 2023

2023 journal article

High conductivity and low activation energy in p-type AlGaN

Applied Physics Letters.

By: S. Rathkanthiwar n, P. Bagheri n, D. Khachariya, S. Mita, C. Quiñones-García n, Y. Guan n, B. Moody, P. Reddy ...

co-author countries: United States of America 🇺🇸
Source: ORCID
Added: March 1, 2023

2023 journal article

High conductivity in Ge-doped AlN achieved by a non-equilibrium process

APPLIED PHYSICS LETTERS, 122(14).

By: P. Bagheri n, C. Quinones-Garcia n, D. Khachariya*, J. Loveless n, Y. Guan n, S. Rathkanthiwar n, P. Reddy*, R. Kirste* ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: April 6, 2023

2023 journal article

High p-conductivity in AlGaN enabled by polarization field engineering

APPLIED PHYSICS LETTERS, 122(15).

By: S. Rathkanthiwar n, P. Reddy*, B. Moody*, C. Quinones-Garcia n, P. Bagheri n, D. Khachariya*, R. Dalmau*, S. Mita* ...

co-author countries: United States of America 🇺🇸
Sources: ORCID, Web Of Science
Added: April 19, 2023

2023 journal article

Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor

APPLIED PHYSICS EXPRESS, 16(3).

By: S. Stein n, D. Khachariya*, S. Mita*, M. Breckenridge n, J. Tweedie*, P. Reddy*, K. Sierakowski*, G. Kamler* ...

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
author keywords: GaN; JBS diode; Schottky contact; ultra-high-pressure-annealing; ideality factor; ion implantation; barrier height
Sources: Web Of Science, ORCID
Added: April 17, 2023

2022 journal article

(Invited, Digital Presentation) Exploring Interfaces and Polarity to Realize Vertical III-Nitride Superjunction Devices

ECS Meeting Abstracts.

co-author countries: Germany 🇩🇪 United States of America 🇺🇸
Source: ORCID
Added: July 15, 2022

2022 journal article

The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN

APPLIED PHYSICS LETTERS, 120(3).

By: K. Wang n, R. Kirste n, S. Mita*, S. Washiyama n, W. Mecouch*, P. Reddy*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: May 2, 2022

2022 article

Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates

Rathkanthiwar, S., Graziano, M. B., Tweedie, J., Mita, S., Kirste, R., Collazo, R., & Sitar, Z. (2022, October 25). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 10.

By: S. Rathkanthiwar n, M. Graziano n, J. Tweedie*, S. Mita*, R. Kirste*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
author keywords: AlGaN; AlN substrates; strain relaxation; tilt
Sources: Web Of Science, ORCID
Added: October 31, 2022

2022 journal article

Doping and compensation in heavily Mg doped Al-rich AlGaN films

APPLIED PHYSICS LETTERS, 120(8).

By: P. Bagheri n, A. Klump n, S. Washiyama n, M. Breckenridge n, J. Kim n, Y. Guan n, D. Khachariya n, C. Quinones-Garcia n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: June 20, 2022

2022 journal article

GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions

JOURNAL OF APPLIED PHYSICS, 131(1).

By: D. Szymanski n, D. Khachariya n, T. Eldred n, P. Bagheri n, S. Washiyama n, A. Chang*, S. Pavlidis n, R. Kirste* ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: January 4, 2022

2022 journal article

High electron mobility in AlN:Si by point and extended defect management

JOURNAL OF APPLIED PHYSICS, 132(18).

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: November 10, 2022

2022 article

Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3.

By: P. Reddy*, W. Mecouch*, M. Breckenridge n, D. Khachariya n, P. Bagheri n, J. Kim n, Y. Guan n, S. Mita* ...

co-author countries: United States of America 🇺🇸
author keywords: AlGaN; APD; UVC
Sources: Web Of Science, ORCID
Added: March 11, 2022

2022 journal article

Low resistivity, p-type, N-Polar GaN achieved by chemical potential control

APPLIED PHYSICS EXPRESS, 15(8).

By: S. Rathkanthiwar n, D. Szymanski n, D. Khachariya n, P. Bagheri n, J. Kim n, S. Mita*, P. Reddy*, E. Kohn n ...

co-author countries: United States of America 🇺🇸
author keywords: N-polar GaN; p doping; compensation; chemical potential control
Sources: Web Of Science, ORCID
Added: August 8, 2022

2022 journal article

On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).

By: A. Jadhav*, P. Bagheri n, A. Klump n, D. Khachariya n, S. Mita*, P. Reddy*, S. Rathkanthiwar n, R. Kirste* ...

co-author countries: India 🇮🇳 United States of America 🇺🇸
author keywords: III-nitride; Mg-doped AlGaN; ionization energy; mobility; contact resistance
Sources: Web Of Science, ORCID
Added: November 6, 2021

2022 journal article

On the conduction mechanism in compositionally graded AlGaN

APPLIED PHYSICS LETTERS, 121(7).

By: S. Rathkanthiwar n, P. Bagheri n, D. Khachariya*, J. Kim n, Y. Kajikawa*, P. Reddy*, S. Mita*, R. Kirste* ...

co-author countries: Japan 🇯🇵 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 29, 2022

2022 journal article

Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices

APPLIED PHYSICS EXPRESS, 15(5).

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: April 25, 2022

2022 journal article

Pseudomorphic growth of thick Al0.6Ga0.4N epilayers on AlN substrates

APPLIED PHYSICS LETTERS, 120(20).

By: S. Rathkanthiwar n, J. Dycus*, S. Mita*, R. Kirste*, J. Tweedie*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: May 31, 2022

2022 journal article

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS, 120(17).

By: D. Khachariya n, S. Mita*, P. Reddy*, S. Dangi n, J. Dycus*, P. Bagheri n, M. Breckenridge n, R. Sengupta n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: May 31, 2022

2022 article

Spintronic Terahertz Emission in Ultrawide Bandgap Semiconductor/Ferromagnet Heterostructures

Comstock, A., Biliroglu, M., Seyitliyev, D., McConnell, A., Vetter, E., Reddy, P., … Sun, D. (2022, October 31). ADVANCED OPTICAL MATERIALS, Vol. 10.

By: A. Comstock n, M. Biliroglu n, D. Seyitliyev n, A. McConnell n, E. Vetter n, P. Reddy*, R. Kirste*, D. Szymanski* ...

co-author countries: United States of America 🇺🇸
author keywords: spintronics; terahertz; two-dimensional electron gas; ultrawide bandgap semiconductors
Sources: Web Of Science, ORCID
Added: November 14, 2022

2022 journal article

Systematic oxygen impurity reduction in smooth N-polar GaN by chemical potential control

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).

By: D. Szymanski*, K. Wang, F. Kaess*, R. Kirste*, S. Mita*, P. Reddy*, Z. Sitar*, R. Collazo*

author keywords: oxygen; impurity; semiconductor; nitride; chemical potential; defect
Sources: Web Of Science, ORCID
Added: June 19, 2023

2022 article

Tracking of Point Defects in the Full Compositional Range of AlGaN via Photoluminescence Spectroscopy

Hyun Kim, J., Bagheri, P., Kirste, R., Reddy, P., Collazo, R., & Sitar, Z. (2022, December 9). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 12.

By: J. Hyun Kim n, P. Bagheri n, R. Kirste*, P. Reddy*, R. Collazo n & Z. Sitar n

co-author countries: United States of America 🇺🇸
author keywords: AlGaN; AlN; defects; GaN; photoluminescence
Sources: Web Of Science, ORCID
Added: December 10, 2022

2022 journal article

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

APPLIED PHYSICS EXPRESS, 15(10).

By: D. Khachariya*, S. Stein n, W. Mecouch*, M. Breckenridge n, S. Rathkanthiwar n, S. Mita*, B. Moody*, P. Reddy* ...

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
author keywords: GaN; junction barrier Schottky diode; low ON-resistance; high breakdown voltage; Mg ion implantation; ultra-high-pressure anneal
Sources: Web Of Science, ORCID
Added: October 3, 2022

2021 journal article

(Invited) Ion Implantation and Polarity Control: Paths Toward a III-Nitride Superjunction

ECS Meeting Abstracts.

By: R. Collazo*, D. Szymanski, D. Khachariya, M. Breckenridge, Y. Guan, P. Bagheri, P. Reddy, R. Kirste ...

Source: ORCID
Added: November 12, 2021

2021 journal article

A pathway to highly conducting Ge-doped AlGaN

JOURNAL OF APPLIED PHYSICS, 130(20).

By: P. Bagheri n, J. Kim n, S. Washiyama n, P. Reddy*, A. Klump n, R. Kirste*, S. Mita*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: November 23, 2021

2021 journal article

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

APPLIED PHYSICS LETTERS, 118(2).

By: M. Breckenridge n, J. Tweedie*, P. Reddy*, Y. Guan n, P. Bagheri n, D. Szymanski n, S. Mita*, K. Sierakowski* ...

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
Sources: ORCID, Web Of Science
Added: January 14, 2021

2021 journal article

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

APPLIED PHYSICS LETTERS, 118(11).

By: M. Breckenridge n, P. Bagheri n, Q. Guo n, B. Sarkar n, D. Khachariya n, S. Pavlidis n, J. Tweedie*, R. Kirste* ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: March 17, 2021

2021 journal article

Native oxide reconstructions on AlN and GaN (0001) surfaces

JOURNAL OF APPLIED PHYSICS, 129(19).

By: K. Mirrielees n, J. Dycus n, J. Baker n, P. Reddy*, R. Collazo n, Z. Sitar n, J. LeBeau*, D. Irving n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: September 13, 2021

2021 journal article

On the Ge shallow-to-deep level transition in Al-rich AlGaN

JOURNAL OF APPLIED PHYSICS, 130(5).

By: P. Bagheri n, P. Reddy*, S. Mita*, D. Szymanski n, J. Kim n, Y. Guan n, D. Khachariya n, A. Klump n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 4, 2021

2021 journal article

On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers

APPLIED PHYSICS LETTERS, 118(12).

By: D. Khachariya n, D. Szymanski n, M. Breckenridge n, P. Reddy*, E. Kohn n, Z. Sitar n, R. Collazo n, S. Pavlidis n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: March 24, 2021

2021 journal article

Role of oxygen diffusion in the dislocation reduction of epitaxial AlN on sapphire during high-temperature annealing

JOURNAL OF APPLIED PHYSICS, 130(20).

By: L. Cancellara*, T. Markurt*, T. Schulz*, M. Albrecht*, S. Hagedorn*, S. Walde*, M. Weyers*, S. Washiyama n, R. Collazo n, Z. Sitar n

co-author countries: Germany 🇩🇪 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: December 6, 2021

2021 journal article

Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

APPLIED PHYSICS LETTERS, 118(4).

By: S. Washiyama n, K. Mirrielees n, P. Bagheri n, J. Baker n, J. Kim n, Q. Guo n, R. Kirste*, Y. Guan n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: March 29, 2021

2021 article

Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength

Kirste, R., Sarkar, B., Reddy, P., Guo, Q., Collazo, R., & Sitar, Z. (2021, December 15). JOURNAL OF MATERIALS RESEARCH, Vol. 12.

By: R. Kirste n, B. Sarkar n, P. Reddy n, Q. Guo n, R. Collazo n & Z. Sitar n

co-author countries: United States of America 🇺🇸
author keywords: Laser; Optoelectronic; Electrical properties; Optical properties; Dopant
Sources: Web Of Science, ORCID
Added: January 3, 2022

2021 journal article

Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN

APPLIED PHYSICS LETTERS, 119(18).

By: P. Reddy*, D. Khachariya n, W. Mecouch*, M. Breckenridge n, P. Bagheri n, Y. Guan n, J. Kim n, S. Pavlidis n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: November 3, 2021

2021 journal article

Substrate Modification during Chemical Vapor Deposition of hBN on Sapphire

ACS APPLIED MATERIALS & INTERFACES, 13(45), 54516–54526.

By: A. Bansal*, M. Hilse*, B. Huet*, K. Wang*, A. Kozhakhmetov*, J. Kim n, S. Bachu*, N. Alem* ...

co-author countries: United States of America 🇺🇸
author keywords: chemical vapor deposition; hexagonal boron nitride; 2D material; III-V nitrides; surface reconstruction; RHEED; dielectric breakdown
Sources: Web Of Science, ORCID
Added: February 21, 2022

2021 journal article

Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies

APPLIED PHYSICS LETTERS, 119(2).

By: J. Kim n, P. Bagheri n, S. Washiyama n, A. Klump n, R. Kirste*, S. Mita*, P. Reddy*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: July 26, 2021

2021 article

Tuning Microbial Activity via Programmatic Alteration of Cell/Substrate Interfaces

Gulyuk, A. V., LaJeunesse, D. R., Collazo, R., & Ivanisevic, A. (2021, May 24). ADVANCED MATERIALS, Vol. 5.

By: A. Gulyuk n, D. LaJeunesse*, R. Collazo n & A. Ivanisevic n

co-author countries: United States of America 🇺🇸
author keywords: advanced programmable materials; biointerfaces; microorganisms; semiconductors
MeSH headings : Biofilms / drug effects; Biomimetic Materials / chemistry; Biomimetic Materials / pharmacology; Gram-Negative Bacteria / physiology; Gram-Positive Bacteria / physiology; Nanostructures / chemistry; Nanostructures / toxicity; Polymers / chemistry; Semiconductors; Zinc Oxide / chemistry; Zinc Oxide / pharmacology
Sources: Web Of Science, ORCID
Added: June 10, 2021

2021 article

UV illumination effects on AlGaN/GaN HEMTs for tunable RF oscillators

2021 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS), pp. 168–170.

By: S. Stein n, M. Robbins n, P. Reddy*, R. Collazo n & S. Pavlidis n

co-author countries: United States of America 🇺🇸
author keywords: AlGaN/GaN HEMTs; Optical Control; Illumination Effects; Oscillator
Sources: Web Of Science, ORCID
Added: July 26, 2021

2021 journal article

Weak localization and dimensional crossover in compositionally graded AlxGa1-xN

APPLIED PHYSICS LETTERS, 118(8).

By: A. Al-Tawhid n, A. Shafe n, P. Bagheri n, Y. Guan n, P. Reddy*, S. Mita*, B. Moody*, R. Collazo n, Z. Sitar n, K. Ahadi n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: February 25, 2021

2020 journal article

(Invited) A Path Toward Vertical GaN Superjunction Devices

ECS Transactions, 98(6), 69–79.

co-author countries: United States of America 🇺🇸
Source: ORCID
Added: January 11, 2021

2020 journal article

Cathodoluminescence of silicon doped aluminum nitride with scanning transmission electron microscopy

APL MATERIALS, 8(9).

By: M. Hauwiller*, D. Stowe, T. Eldred n, S. Mita n, R. Collazo n, Z. Sitar n, J. LeBeau*

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: October 19, 2020

2020 journal article

Complexes and compensation in degenerately donor doped GaN

APPLIED PHYSICS LETTERS, 117(10).

By: J. Baker n, P. Bowes n, J. Harris n, R. Collazo n, Z. Sitar n & D. Irving n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: October 12, 2020

2020 journal article

High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates

Applied Physics Letters, 116(8), 081101.

By: P. Reddy*, M. Breckenridge n, Q. Guo n, A. Klump n, D. Khachariya n, S. Pavlidis n, W. Mecouch*, S. Mita* ...

co-author countries: United States of America 🇺🇸
Source: ORCID
Added: February 25, 2020

2020 journal article

Hydride vapor phase epitaxy of Si -doped AlN layers using SiCl 4 as a doping gas

JOURNAL OF CRYSTAL GROWTH, 545.

By: R. Yamamoto*, N. Takekawa*, K. Goto*, T. Nagashima*, R. Dalmau*, R. Schlesser*, H. Murakami*, R. Collazo n ...

co-author countries: Japan 🇯🇵 Sweden 🇸🇪 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: July 6, 2020

2020 journal article

Modulating the Stress Response of E. coli at GaN Interfaces Using Surface Charge, Surface Chemistry, and Genetic Mutations

ACS APPLIED BIO MATERIALS, 3(10), 7211–7218.

By: S. Gleco n, P. Reddy*, R. Kirste*, R. Collazo n, D. LaJeunesse* & A. Ivanisevic n

co-author countries: United States of America 🇺🇸
author keywords: gallium nitride; E. coli; UV light; surface charge; reactive oxygen species; calcium
Sources: Web Of Science, ORCID
Added: September 30, 2020

2020 journal article

Recovery kinetics in high temperature annealed AlN heteroepitaxial films

JOURNAL OF APPLIED PHYSICS, 127(11).

By: S. Washiyama n, Y. Guan n, S. Mita*, R. Collazo n & Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: April 20, 2020

2020 journal article

Role of polarity in SiN on Al/GaN and the pathway to stable contacts

Semiconductor Science and Technology, 35(5), 055007.

co-author countries: United States of America 🇺🇸
author keywords: SiN; AlGaN; GaN; passivation; polarity; polarization; interface
Source: ORCID
Added: February 19, 2020

2020 journal article

Shallow Si donor in ion-implanted homoepitaxial AlN

Applied Physics Letters, 116(17), 172103.

By: M. Breckenridge n, Q. Guo n, A. Klump n, B. Sarkar n, Y. Guan n, J. Tweedie*, R. Kirste*, S. Mita* ...

co-author countries: United States of America 🇺🇸
Source: ORCID
Added: April 28, 2020

2020 journal article

Strain Recovery and Defect Characterization in Mg-Implanted Homoepitaxial GaN on High-Quality GaN Substrates

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 257(4).

By: Y. Wang*, K. Huynh*, M. Liao*, H. Yu*, T. Bai*, J. Tweedie*, M. Breckenridge n, R. Collazo n ...

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
author keywords: defects; GaN; implantation; Mg ions
Sources: Web Of Science, ORCID
Added: March 16, 2020

2020 journal article

Study of Dislocations in Homoepitaxially and Heteroepitaxially Grown AlN Layers

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 217(24).

By: K. Goto*, N. Takekawa*, T. Nagashima*, R. Yamamoto*, G. Pozina*, R. Dalmau*, R. Schlesser*, R. Collazo n ...

co-author countries: Japan 🇯🇵 Poland 🇵🇱 Sweden 🇸🇪 United States of America 🇺🇸
author keywords: aluminum nitride; dislocations; etch pits; hydride vapor phase epitaxy; ultrawide bandgap semiconductor
Sources: Web Of Science, ORCID
Added: November 16, 2020

2020 journal article

The 2020 UV emitter roadmap

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 53(50).

By: H. Amano*, R. Collazo n, C. Santi*, S. Einfeldt*, M. Funato*, J. Glaab*, S. Hagedorn*, A. Hirano ...

co-author countries: Germany 🇩🇪 France 🇫🇷 United Kingdom of Great Britain and Northern Ireland 🇬🇧 Ireland 🇮🇪 India 🇮🇳 Italy 🇮🇹 Japan 🇯🇵 Taiwan, Province of China 🇹🇼 United States of America 🇺🇸
author keywords: ultraviolet; light emitting diodes; InGaN; UV-LED; AlGaN
Sources: Web Of Science, ORCID
Added: October 19, 2020

2019 journal article

Oxygen and silicon point defects in Al0.65Ga0.35N

PHYSICAL REVIEW MATERIALS, 3(5).

By: J. Harris n, B. Gaddy n, R. Collazo n, Z. Sitar n & D. Irving n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: June 17, 2019

2019 journal article

Quasi-phase-matched second harmonic generation of UV light using AlN waveguides

APPLIED PHYSICS LETTERS, 114(10).

By: D. Alden n, T. Troha*, R. Kirste n, S. Mita n, Q. Guo n, A. Hoffmann*, M. Zgonik*, R. Collazo n, Z. Sitar n

co-author countries: Germany 🇩🇪 Slovenia 🇸🇮 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: April 2, 2019

2019 journal article

Structural characteristics of m-plane AlN substrates and homoepitaxial films

JOURNAL OF CRYSTAL GROWTH, 507, 389–394.

By: M. Graziano n, I. Bryan n, Z. Bryan n, R. Kirste n, J. Tweedie n, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
author keywords: Characterization; High resolution x-ray diffraction; Surface structure; Crystal structure; Metalorganic chemical vapor deposition; Nitrides
Sources: Web Of Science, ORCID
Added: January 28, 2019

2019 article

The polarization field in Al-rich AlGaN multiple quantum wells

Guo, Q., Kirste, R., Mita, S., Tweedie, J., Reddy, P., Washiyama, S., … Sitar, Z. (2019, June 1). JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 58.

By: Q. Guo n, R. Kirste n, S. Mita n, J. Tweedie n, P. Reddy n, S. Washiyama n, M. Breckenridge n, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: July 29, 2019

2019 journal article

The role of transient surface morphology on composition control in AlGaN layers and wells

APPLIED PHYSICS LETTERS, 114(3).

By: J. Dycus n, S. Washiyama n, T. Eldred n, Y. Guan n, R. Kirste*, S. Mita*, Z. Sitar n, R. Collazo n, J. LeBeau n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: February 11, 2019

2018 journal article

A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 124(11).

By: S. Washiyama n, P. Reddy*, F. Kaess n, R. Kirste*, S. Mita*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: October 16, 2018

2018 journal article

Bioelectronics communication: encoding yeast regulatory responses using nanostructured gallium nitride thin films

Nanoscale, 10(24), 11506–11516.

By: P. Snyder n, D. LaJeunesse*, P. Reddy*, R. Kirste*, R. Collazo n & A. Ivanisevic n

co-author countries: United States of America 🇺🇸

Contributors: P. Snyder n, D. Lajeunesse*, P. Reddy*, R. Kirste*, R. Collazo n & A. Ivanisevic n

MeSH headings : Cell Membrane / physiology; Cell Wall / physiology; Chitin / biosynthesis; Gallium / chemistry; Microscopy, Atomic Force; Nanostructures; Oxygen / chemistry; Saccharomyces cerevisiae / physiology; Semiconductors; Ultraviolet Rays
Sources: Crossref, ORCID
Added: January 23, 2019

2018 review

Bulk and Surface Electronic Properties of Inorganic Materials: Tools to Guide Cellular Behavior

[Review of ]. SMALL METHODS, 2(9).

By: P. Snyder n, P. Reddy*, R. Kirste*, R. Collazo n & A. Ivanisevic n

co-author countries: United States of America 🇺🇸
author keywords: (photo)conductivity; charge; neural cells; piezoelectricity; polarity; semiconductors
Sources: Web Of Science, ORCID
Added: October 16, 2018

2018 journal article

Characterization of Pseudomonas aeruginosa Films on Different Inorganic Surfaces before and after UV Light Exposure

LANGMUIR, 34(36), 10806–10815.

By: A. Gulyuk n, D. LaJeunesse*, R. Collazo n & A. Ivanisevic n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: October 16, 2018

2018 journal article

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

APPLIED PHYSICS LETTERS, 112(6).

By: I. Bryan n, Z. Bryan n, S. Washiyama n, P. Reddy*, B. Gaddy n, B. Sarkar n, M. Breckenridge n, Q. Guo n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2018 journal article

Improvement in detection limit for time-of-flight SIMS analysis of dopants in GaN structures

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 36(3).

By: A. Klump n, C. Zhou n, F. Stevie n, R. Collazo n & Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2018 journal article

Noninvasive Stimulation of Neurotypic Cells Using Persistent Photoconductivity of Gallium Nitride

ACS Omega, 3(1), 615–621.

By: P. Snyder n, P. Reddy*, R. Kirste*, D. LaJeunesse*, R. Collazo n & A. Ivanisevic n

co-author countries: United States of America 🇺🇸
Sources: Crossref, ORCID
Added: January 23, 2019

2018 conference paper

On Contacts to III-nitride deep-UV emitters

2018 3rd International Conference on Microwave and Photonics (ICMAP).

By: B. Sarkar n, P. Reddy*, A. Klump n, R. Rounds n, M. Breckenridge n, B. Haidet n, S. Mita*, R. Kirste*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2018 journal article

On compensation in Si-doped AlN

APPLIED PHYSICS LETTERS, 112(15).

By: J. Harris n, J. Baker n, B. Gaddy n, I. Bryan n, Z. Bryan n, K. Mirrielees n, P. Reddy*, R. Collazo n, Z. Sitar n, D. Irving n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2018 journal article

Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(6).

By: P. Reddy n, S. Washiyama n, W. Mecouch n, L. Hernandez-Balderrama n, F. Kaess n, M. Breckenridge n, B. Sarkar n, B. Haidet n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: December 10, 2018

2018 journal article

Point-Defect Nature of the Ultraviolet Absorption Band in AIN

PHYSICAL REVIEW APPLIED, 9(5).

By: D. Alden n, J. Harris n, Z. Bryan n, J. Baker n, P. Reddy n, S. Mita*, G. Callsen*, A. Hoffmann* ...

co-author countries: Germany 🇩🇪 United States of America 🇺🇸

Contributors: D. Alden n, J. Harris n, Z. Bryan n, J. Baker n, P. Reddy n, S. Mita*, G. Callsen*, A. Hoffmann* ...

Sources: Web Of Science, ORCID
Added: August 6, 2018

2018 journal article

Probing collective oscillation ofd-orbital electrons at the nanoscale

Applied Physics Letters, 112(6), 061102.

By: R. Dhall n, D. Vigil-Fowler*, J. Houston Dycus n, R. Kirste*, S. Mita*, Z. Sitar n, R. Collazo n, J. LeBeau*

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID, Crossref
Added: August 6, 2018

2018 journal article

Structure of Ultrathin Native Oxides on III-Nitride Surfaces

ACS APPLIED MATERIALS & INTERFACES, 10(13), 10607–10611.

By: J. Dycus n, K. Mirrielees n, E. Grimley n, R. Kirste n, S. Mita n, Z. Sitar n, R. Collazo n, D. Irving n, J. LeBeau n

co-author countries: United States of America 🇺🇸
author keywords: ultrathin oxides; surface reconstructions; group III nitrides; scanning transmission electron microscopy; density functional theory
Sources: Web Of Science, ORCID
Added: August 6, 2018

2018 journal article

The influence of point defects on the thermal conductivity of AlN crystals

JOURNAL OF APPLIED PHYSICS, 123(18).

By: R. Rounds n, B. Sarkar n, D. Alden n, Q. Guo n, A. Klump n, C. Hartmann*, T. Nagashima*, R. Kirste n ...

co-author countries: Germany 🇩🇪 Japan 🇯🇵 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2018 journal article

Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes

JOURNAL OF APPLIED PHYSICS, 124(10).

co-author countries: Japan 🇯🇵 Poland 🇵🇱 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: October 16, 2018

2018 journal article

Thermal conductivity of single-crystalline AIN

APPLIED PHYSICS EXPRESS, 11(7).

By: R. Rounds n, B. Sarkar n, A. Klump n, C. Hartmann*, T. Nagashima*, R. Kirste n, A. Franke n, M. Bickermann* ...

co-author countries: Germany 🇩🇪 Japan 🇯🇵 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2018 journal article

Variably doped nanostructured gallium nitride surfaces can serve as biointerfaces for neurotypic PC12 cells and alter their behavior

RSC ADVANCES, 8(64), 36722–36730.

By: P. Snyder n, P. Reddy*, R. Kirste*, D. LaJeunesse*, R. Collazo n & A. Ivanisevic n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: November 26, 2018

2017 article

(Invited) Material Considerations for the Development of III-nitride Power Devices

GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 7, Vol. 80, pp. 29–36.

By: B. Sarkar n, P. Reddy n, F. Kaess n, B. Haidet n, J. Tweedie*, S. Mita*, R. Kirste*, E. Kohn n ...

co-author countries: United States of America 🇺🇸

Contributors: B. Sarkar n, P. Reddy n, F. Kaess n, B. Haidet n, J. Tweedie*, S. Mita*, R. Kirste*, E. Kohn n, R. Collazo n, Z. Sitar n

Sources: Web Of Science, ORCID
Added: August 6, 2018

2017 journal article

Defect quasi Fermi level control-based C-N reduction in GaN: Evidence for the role of minority carriers

APPLIED PHYSICS LETTERS, 111(15).

By: P. Reddy n, F. Kaess n, J. Tweedie*, R. Kirste*, S. Mita*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2017 journal article

Defect-free Ni/GaN Schottky barrier behavior with high temperature stability

APPLIED PHYSICS LETTERS, 110(1).

By: P. Reddy n, B. Sarkar n, F. Kaess n, M. Gerhold*, E. Kohn n, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2017 journal article

High free carrier concentration in p-GaN grown on AlN substrates

APPLIED PHYSICS LETTERS, 111(3).

By: B. Sarkar n, S. Mita n, P. Reddy n, A. Klump n, F. Kaess n, J. Tweedie n, I. Bryan n, Z. Bryan n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2017 article

Model for the deep defect-related emission bands between 1.4 and 2.4 eV in AlN

Lamprecht, M., Jmerik, V. N., Collazo, R., Sitar, Z., Ivanov, S. V., & Thonke, K. (2017, August). PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 254.

By: M. Lamprecht*, V. Jmerik*, R. Collazo n, Z. Sitar n, S. Ivanov & K. Thonke*

co-author countries: Germany 🇩🇪 Russian Federation 🇷🇺 United States of America 🇺🇸
author keywords: AlN; deep levels; defects; photoluminescence
Sources: Web Of Science, ORCID
Added: August 6, 2018

2017 journal article

Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN

JAPANESE JOURNAL OF APPLIED PHYSICS, 56(10).

By: B. Haidet n, B. Sarkar n, P. Reddy n, I. Bryan n, Z. Bryan n, R. Kirste*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸

Contributors: B. Haidet n, B. Sarkar n, P. Reddy n, I. Bryan n, Z. Bryan n, R. Kirste*, R. Collazo n, Z. Sitar n

Sources: Web Of Science, ORCID
Added: August 6, 2018

2017 journal article

On Ni/Au Alloyed Contacts to Mg-Doped GaN

Journal of Electronic Materials, 47(1), 305–311.

By: B. Sarkar n, P. Reddy n, A. Klump n, F. Kaess n, R. Rounds n, R. Kirste n, S. Mita n, E. Kohn n, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
author keywords: Alloyed contact; p-GaN; TLM; specific contact resistance
Sources: Crossref, ORCID, Web Of Science
Added: August 6, 2018

2017 journal article

Optical nonlinear and electro-optical coefficients in bulk aluminium nitride single crystals

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 254(9).

By: A. Majkic*, A. Franke n, R. Kirste*, R. Schlesser*, R. Collazo n, Z. Sitar n, M. Zgonik*

co-author countries: Slovenia 🇸🇮 United States of America 🇺🇸
author keywords: AlN; nonlinear optical properties; second harmonic generation; single crystals
Sources: Web Of Science, ORCID
Added: August 6, 2018

2017 journal article

Optical signatures of silicon and oxygen related DX centers in AlN

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 214(9).

By: K. Thonke*, M. Lamprecht*, R. Collazo n & Z. Sitar n

co-author countries: Germany 🇩🇪 United States of America 🇺🇸
author keywords: AlN; DX centres; time-resolved photoluminescence
Sources: Web Of Science, ORCID
Added: August 6, 2018

2017 journal article

Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatment

APPLIED PHYSICS EXPRESS, 10(7).

By: B. Sarkar n, B. Haidet n, P. Reddy n, R. Kirste n, R. Collazo n & Z. Sitar n

co-author countries: United States of America 🇺🇸

Contributors: B. Sarkar n, B. Haidet n, P. Reddy n, R. Kirste n, R. Collazo n & Z. Sitar n

Sources: Web Of Science, ORCID
Added: August 6, 2018

2017 journal article

Persistent Photoconductivity, Nanoscale Topography, and Chemical Functionalization Can Collectively Influence the Behavior of PC12 Cells on Wide Bandgap Semiconductor Surfaces

SMALL, 13(24).

By: P. Snyder n, R. Kirste n, R. Collazo n & A. Ivanisevic n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2017 journal article

Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN

Journal of Applied Physics, 122(24), 245702.

By: P. Reddy n, S. Washiyama n, F. Kaess n, R. Kirste*, S. Mita*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2017 journal article

Slow decay of a defect-related emission band at 2.05eV in AlN: Signatures of oxygen-related DX states

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 254(5).

By: M. Lamprecht*, C. Grund*, S. Bauer*, R. Collazo n, Z. Sitar n & K. Thonke*

co-author countries: Germany 🇩🇪 United States of America 🇺🇸
author keywords: AlN; DX center; oxygen; slow decay; time-resolved photoluminescence
Sources: Web Of Science, ORCID
Added: August 6, 2018

2017 journal article

Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy

APL MATERIALS, 5(9).

By: C. Shelton n, I. Bryan n, E. Paisley*, E. Sachet n, J. Ihlefeld*, N. Lavrik*, R. Collazo n, Z. Sitar n, J. Maria n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2017 journal article

Structure and Chemistry of Oxide Surface Reconstructions in III-Nitrides Observed using STEM EELS

Microscopy and Microanalysis, 23(S1), 1444–1445.

By: J. Dycus n, K. Mirrielees n, E. Grimley n, R. Dhall n, R. Kirste*, S. Mita*, Z. Sitar n, R. Collazo n, D. Irving n, J. LeBeau n

co-author countries: United States of America 🇺🇸
Sources: Crossref, ORCID
Added: February 19, 2020

2017 journal article

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

Advanced Electronic Materials, 4(1), 1600501.

By: J. Tsao*, S. Chowdhury*, M. Hollis*, D. Jena*, N. Johnson*, K. Jones*, R. Kaplar*, S. Rajan* ...

co-author countries: Japan 🇯🇵 United States of America 🇺🇸
author keywords: aluminum nitride; boron nitride; diamond; extreme environments; gallium oxide; power electronics; ultrawide bandgaps; UV-C
Sources: ORCID, Crossref
Added: February 19, 2020

2016 journal article

Atomically Thin MoS2 Narrowband and Broadband Light Superabsorbers

ACS NANO, 10(8), 7493–7499.

By: L. Huang n, G. Li n, A. Gurarslan n, Y. Yu n, R. Kirste n, W. Guo n, J. Zhao n, R. Collazo n ...

co-author countries: United States of America 🇺🇸

Contributors: L. Huang n, G. Li n, A. Gurarslan n, Y. Yu n, R. Kirste n, W. Guo n, J. Zhao n, R. Collazo n ...

author keywords: MoS2; two-dimensional materials; light absorption; leaky mode; resonant photonics
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 journal article

Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 120(10).

By: F. Kaess n, S. Mita*, J. Xie n, P. Reddy n, A. Klump n, L. Hernandez-Balderrama n, S. Washiyama n, A. Franke n ...

co-author countries: Germany 🇩🇪 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 journal article

Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications

APPLIED PHYSICS LETTERS, 108(26).

By: D. Alden n, W. Guo n, R. Kirste*, F. Kaess n, I. Bryan n, T. Troha*, A. Bagal n, P. Reddy n ...

co-author countries: Germany 🇩🇪 Slovenia 🇸🇮 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 journal article

HgNO3 sensitivity of AlGaN/GaN field effect transistors functionalized with phytochelating peptides

AIP ADVANCES, 6(6).

By: N. Rohrbaugh n, L. Hernandez-Balderrama n, F. Kaess n, R. Kirste n, R. Collazo n & A. Ivanisevic n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 journal article

High reflectivity III-nitride UV-C distributed Bragg reflectors for vertical cavity emitting lasers

JOURNAL OF APPLIED PHYSICS, 120(13).

By: A. Franke n, M. Hoffmann n, R. Kirste*, M. Bobea n, J. Tweedie*, F. Kaess n, M. Gerhold, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 journal article

High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

JOURNAL OF APPLIED PHYSICS, 119(14).

By: P. Reddy n, S. Washiyama n, F. Kaess n, M. Breckenridge n, L. Hernandez-Balderrama n, B. Haidet n, D. Alden n, A. Franke n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 journal article

Influence of high-temperature processing on the surface properties of bulk AlN substrates

JOURNAL OF CRYSTAL GROWTH, 446, 33–38.

By: S. Tojo, R. Yamamoto, R. Tanaka, Q. Thieu, R. Togashi, T. Nagashima, T. Kinoshita, R. Dalmau ...

author keywords: Impurities; Point defects; Hydride vapor phase epitaxy; Nitrides; Quartz; Semiconducting aluminum compounds
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 journal article

Nanoscale topography, semiconductor polarity and surface functionalization: additive and cooperative effects on PC12 cell behavior

RSC ADVANCES, 6(100), 97873–97881.

By: P. Snyder n, R. Kirste n, R. Collazoa & A. Ivanisevic n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 journal article

Nanoscopy of Phase Separation in InxGa1-xN Alloys

ACS APPLIED MATERIALS & INTERFACES, 8(35), 23160–23166.

By: Y. Abate*, D. Seidlitz*, A. Fali*, S. Gamage*, V. Babicheva*, V. Yakovlev*, M. Stockman*, R. Collazo n, D. Alden n, N. Dietz*

co-author countries: United States of America 🇺🇸
author keywords: indium gallium nitride alloys; phase separation semiconductors; composition profile; nanospectroscopy; near-field
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 journal article

Neurotypic cell attachment and growth on III-nitride lateral polarity structures

MATERIALS SCIENCE & ENGINEERING C-MATERIALS FOR BIOLOGICAL APPLICATIONS, 58, 1194–1198.

co-author countries: United States of America 🇺🇸
author keywords: Gallium nitride; Cell adhesion; Neurons; Semiconductor; Polarity
MeSH headings : Aluminum Compounds / chemistry; Aluminum Compounds / pharmacology; Animals; Cell Adhesion / drug effects; Cell Differentiation / drug effects; Gallium / chemistry; Gallium / pharmacology; Neurons / cytology; Neurons / drug effects; PC12 Cells; Rats; Semiconductors
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 journal article

Photoluminescence changes of III-Nitride lateral polarity structures after chemical functionalization

MATERIALS RESEARCH EXPRESS, 3(12).

By: N. Berg n, A. Franke n, R. Kirste n, R. Collazo n & A. Ivanisevic n

co-author countries: United States of America 🇺🇸
author keywords: gallium nitride; biomolecule; photoluminescence
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 journal article

Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control

JOURNAL OF APPLIED PHYSICS, 120(18).

By: P. Reddy n, M. Hoffmann n, F. Kaess n, Z. Bryan n, I. Bryan n, M. Bobea n, A. Klump n, J. Tweedie* ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 journal article

Polarity Control in Group-III Nitrides beyond Pragmatism

PHYSICAL REVIEW APPLIED, 5(5).

By: S. Mohn*, N. Stolyarchuk*, T. Markurt*, R. Kirste n, M. Hoffmann n, R. Collazo n, A. Courville*, R. Di Felice* ...

co-author countries: Germany 🇩🇪 France 🇫🇷 Italy 🇮🇹 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 journal article

Selective area epitaxy of magnesium oxide thin films on gallium nitride surfaces

JOURNAL OF MATERIALS RESEARCH, 31(1), 36–45.

By: M. Losego*, E. Paisley*, H. Craft n, P. Lam n, E. Sachet n, S. Mita n, R. Collazo n, Z. Sitar n, J. Maria n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 article

Strain engineered high reflectivity DBRs in the deep UV

GALLIUM NITRIDE MATERIALS AND DEVICES XI, Vol. 9748.

By: A. Franke n, P. Hoffmann n, L. Hernandez-Balderrama n, F. Kaess n, I. Bryan n, S. Washiyama n, M. Bobea n, J. Tweedie n ...

co-author countries: United States of America 🇺🇸
author keywords: Distributed Bragg Reflector (DBR); strain relaxation; MOCVD; AlGaN; Nitride
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 journal article

Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides

JOURNAL OF CRYSTAL GROWTH, 438, 81–89.

By: I. Bryan n, Z. Bryan n, S. Mita*, A. Rice n, J. Tweedie*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
author keywords: Growth models; Surface kinetics; Metalorganic chemical vapor deposition; Nitrides
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 journal article

The effect of illumination power density on carbon defect configuration in silicon doped GaN

JOURNAL OF APPLIED PHYSICS, 120(23).

By: F. Kaess n, P. Reddy n, D. Alden n, A. Klump n, L. Hernandez-Balderrama n, A. Franke n, R. Kirste*, A. Hoffmann* ...

co-author countries: Germany 🇩🇪 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 journal article

The role of surface kinetics on composition and quality of AlGaN

JOURNAL OF CRYSTAL GROWTH, 451, 65–71.

By: I. Bryan n, Z. Bryan n, S. Mita*, A. Rice n, L. Hussey n, C. Shelton n, J. Tweedie*, J. Maria n, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
author keywords: Growth models; Surface kinetics; Metalorganic chemical vapor deposition; Nitrides
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 journal article

Very slow decay of a defect related emission band at 2.4 eV in AlN: Signatures of the Si related shallow DX state

JOURNAL OF APPLIED PHYSICS, 119(15).

By: M. Lamprecht*, C. Grund*, B. Neuschl*, K. Thonke*, Z. Bryan n, R. Collazo n, Z. Sitar n

co-author countries: Germany 🇩🇪 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2015 journal article

A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN

JOURNAL OF APPLIED PHYSICS, 117(24).

By: B. Haidet n, I. Bryan n, P. Reddy n, Z. Bryan n, R. Collazo n & Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2015 journal article

Adsorption and adhesion of common serum proteins to nanotextured gallium nitride

NANOSCALE, 7(6), 2360–2365.

By: L. Bain n, M. Hoffmann n, I. Bryan n, R. Collazo n & A. Ivanisevic n

co-author countries: United States of America 🇺🇸
MeSH headings : Adsorption; Biocompatible Materials / chemistry; Blood Proteins / chemistry; Cell Adhesion / drug effects; Fibrinogen / chemistry; Gallium / chemistry; Humans; Immunoglobulin G / chemistry; Metal Nanoparticles / chemistry; Microscopy, Atomic Force; Molecular Conformation; Nanotechnology / methods; Protein Binding; Reproducibility of Results; Serum Albumin / chemistry; Surface Properties
Sources: Web Of Science, ORCID
Added: August 6, 2018

2015 journal article

Charge neutrality levels, barrier heights, and band offsets at polar AlGaN

APPLIED PHYSICS LETTERS, 107(9).

By: P. Reddy n, I. Bryan n, Z. Bryan n, J. Tweedie*, S. Washiyama n, R. Kirste n, S. Mita*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2015 article

Electronic Biosensors Based on III-Nitride Semiconductors

ANNUAL REVIEW OF ANALYTICAL CHEMISTRY, VOL 8, Vol. 8, pp. 149–169.

By: R. Kirste n, N. Rohrbaugh n, I. Bryan n, Z. Bryan n, R. Collazo n & A. Ivanisevic n

co-author countries: United States of America 🇺🇸
author keywords: semiconductors; surfaces; biosensors; nitrides; field-effect transistors
MeSH headings : Aluminum Compounds / chemistry; Biosensing Techniques; Electronics; Gallium / chemistry; Humans; Semiconductors
Sources: Web Of Science, ORCID
Added: August 6, 2018

2015 journal article

Fabrication of vertical Schottky barrier diodes on n-type freestanding AIN substrates grown by hydride vapor phase epitaxy

APPLIED PHYSICS EXPRESS, 8(6).

By: T. Kinoshita*, T. Nagashima*, T. Obata*, S. Takashima*, R. Yamamoto*, R. Togashi*, Y. Kumagai*, R. Schlesser* ...

co-author countries: Japan 🇯🇵 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2015 article

Growth and characterization of AlxGa1-xN lateral polarity structures

Hoffmann, M. P., Kirste, R., Mita, S., Guo, W., Tweedie, J., Bobea, M., … Sitar, Z. (2015, May). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, pp. 1039–1042.

By: M. Hoffmann n, R. Kirste n, S. Mita*, W. Guo n, J. Tweedie n, M. Bobea n, I. Bryan n, Z. Bryan n ...

co-author countries: United States of America 🇺🇸
author keywords: AlGaN; growth; lateral polarity structures; optical phase matching
Sources: Web Of Science, ORCID
Added: August 6, 2018

2015 journal article

High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

APPLIED PHYSICS LETTERS, 106(14).

By: Z. Bryan n, I. Bryan n, J. Xie*, S. Mita*, Z. Sitar n & R. Collazo n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2015 journal article

KOH based selective wet chemical etching of AlN, AlxGa1-xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode

APPLIED PHYSICS LETTERS, 106(8).

By: W. Guo n, R. Kirste n, I. Bryan n, Z. Bryan n, L. Hussey n, P. Reddy n, J. Tweedie*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2015 journal article

Long-term stability assessment of AlGaN/GaN field effect transistors modified with peptides: Device characteristics vs. surface properties

AIP ADVANCES, 5(9).

By: N. Rohrbaugh n, I. Bryan n, Z. Bryan n, R. Collazo n & A. Ivanisevic n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2015 journal article

Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes

Journal of Applied Physics, 117(11), 113107.

By: W. Guo n, R. Kirste n, Z. Bryan n, I. Bryan n, M. Gerhold*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Source: Crossref
Added: December 27, 2020

2015 journal article

Optical characterization of Al- and N-polar AlN waveguides for integrated optics

APPLIED PHYSICS EXPRESS, 8(4).

By: M. Rigler*, J. Buh*, M. Hoffmann n, R. Kirste n, M. Bobea n, S. Mita*, M. Gerhold, R. Collazo n, Z. Sitar n, M. Zgonik*

co-author countries: Slovenia 🇸🇮 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2015 journal article

Optical properties of aluminum nitride single crystals in the THz region

OPTICAL MATERIALS EXPRESS, 5(10), 2106–2111.

By: A. Majkic*, U. Puc*, A. Franke n, R. Kirste n, R. Collazo n, Z. Sitar n, M. Zgonik*

co-author countries: Slovenia 🇸🇮 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2015 journal article

Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates

APPLIED PHYSICS LETTERS, 106(23).

By: Z. Bryan n, I. Bryan n, S. Mita*, J. Tweedie*, Z. Sitar n & R. Collazo n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 journal article

AlGaN/GaN field effect transistors functionalized with recognition peptides

Applied Physics Letters, 105(13), 134103.

By: N. Rohrbaugh n, I. Bryan n, Z. Bryan n, C. Arellano n, R. Collazo n & A. Ivanisevic n

co-author countries: United States of America 🇺🇸
Source: Crossref
Added: February 24, 2020

2014 journal article

AlGaN/GaN field effect transistors functionalized with recognition peptides

Applied Physics Letters, 105(13).

Source: NC State University Libraries
Added: August 6, 2018

2014 journal article

Direct Observation of the Polarity Control Mechanism in Aluminum Nitride Grown on Sapphire by Aberration Corrected Scanning Transmission Electron Microscopy

Microscopy and Microanalysis, 20(S3), 162–163.

By: L. Hussey n, I. Bryan n, R. Kirste n, W. Guo n, Z. Bryan n, S. Mita, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Crossref, ORCID
Added: February 24, 2020

2014 article

Effects of Environmental Exposure on Stability and Conductance Poly-l-lysine Coated AlGaN/GaN High Electron Mobility Transistors

WIDE BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 15, Vol. 61, pp. 147–151.

By: N. Rohrbaugh n, I. Bryan n, Z. Bryan n, R. Collazo n & A. Ivanisevic n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 journal article

Exciton transitions and oxygen as a donor in m-plane AlN homoepitaxial films

JOURNAL OF APPLIED PHYSICS, 115(13).

By: Z. Bryan n, I. Bryan n, M. Bobea n, L. Hussey n, R. Kirste n, Z. Sitar n, R. Collazo n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 journal article

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

APPLIED PHYSICS LETTERS, 105(22).

By: Z. Bryan n, I. Bryan n, B. Gaddy n, P. Reddy n, L. Hussey n, M. Bobea n, W. Guo n, M. Hoffmann n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 journal article

HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties

JOURNAL OF CRYSTAL GROWTH, 394, 55–60.

By: T. Sochacki*, Z. Bryan n, M. Amilusik*, M. Bobea n, M. Fijalkowski*, I. Bryan n, B. Lucznik*, R. Collazo n ...

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
author keywords: Characterization; Hydride vapor phase epitaxy; GaN; Nitrides; Semiconducting III-V materials
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 journal article

Homoepitaxial AlN thin films deposited on m-plane (1(1)over-bar00) AlN substrates by metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 116(13).

By: I. Bryan n, Z. Bryan n, M. Bobea n, L. Hussey n, R. Kirste n, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 journal article

Phonon pressure coefficients and deformation potentials of wurtzite AlN determined by uniaxial pressure-dependent Raman measurements

PHYSICAL REVIEW B, 90(20).

By: G. Callsen*, M. Wagner*, J. Reparaz*, F. Nippert*, T. Kure*, S. Kalinowski*, A. Hoffmann*, M. Ford* ...

co-author countries: Australia 🇦🇺 Germany 🇩🇪 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 journal article

Polarity characterization by anomalous x-ray dispersion of ZnO films and GaN lateral polar structures

JOURNAL OF APPLIED PHYSICS, 115(4).

By: C. Shelton n, E. Sachet n, E. Paisley n, M. Hoffmann n, J. Rajan n, R. Collazo n, Z. Sitar n, J. Maria n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 article

Properties of AlN based lateral polarity structures

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 2, Vol. 11, pp. 261–264.

By: R. Kirste n, S. Mita*, M. Hoffmann n, L. Hussey n, W. Guo n, I. Bryan n, Z. Bryan n, J. Tweedie n ...

co-author countries: Germany 🇩🇪 United States of America 🇺🇸
author keywords: lateral polarity structures; quasi-phase matching; N-polar; columnar growth
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 journal article

Sapphire decomposition and inversion domains in N-polar aluminum nitride

APPLIED PHYSICS LETTERS, 104(3).

By: L. Hussey n, R. White n, R. Kirste n, S. Mita*, I. Bryan n, W. Guo n, K. Osterman n, B. Haidet n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 journal article

Schottky contact formation on polar and non-polar AlN

JOURNAL OF APPLIED PHYSICS, 116(19).

By: P. Reddy n, I. Bryan n, Z. Bryan n, J. Tweedie n, R. Kirste n, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 journal article

Smooth cubic commensurate oxides on gallium nitride

JOURNAL OF APPLIED PHYSICS, 115(6).

By: E. Paisley n, B. Gaddy n, J. LeBeau n, C. Shelton n, M. Biegalski*, H. Christen*, M. Losego n, S. Mita n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 journal article

Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

JOURNAL OF APPLIED PHYSICS, 115(10).

By: W. Guo n, Z. Bryan n, J. Xie*, R. Kirste n, S. Mita*, I. Bryan n, L. Hussey n, M. Bobea n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 article

Surface preparation of non-polar single-crystalline AlN substrates

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, Vol. 11, pp. 454–457.

By: I. Bryan n, C. Akouala n, J. Tweedie n, Z. Bryan n, A. Rice n, R. Kirste n, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
author keywords: aluminum nitride; aluminum hydroxides; X-ray photoelectron spectroscopy; surface preparation
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 journal article

Surface topography and chemistry shape cellular behavior on wide band-gap semiconductors

Acta Biomaterialia, 10(6), 2455–2462.

By: L. Bain n, R. Collazo n, S. Hsu*, N. Latham, M. Manfra* & A. Ivanisevic n

co-author countries: United States of America 🇺🇸
author keywords: Gallium nitride; Rat pheochromocytoma (PC12) cells; Surface topography; Surface chemistry; Cell differentiation
MeSH headings : Animals; Cell Adhesion; Microscopy, Electron, Scanning; PC12 Cells; Rats; Semiconductors; Surface Properties
Sources: Crossref, ORCID, Web Of Science
Added: August 6, 2018

2014 journal article

The effect of polarity and surface states on the Fermi level at III-nitride surfaces

JOURNAL OF APPLIED PHYSICS, 116(12).

By: P. Reddy n, I. Bryan n, Z. Bryan n, W. Guo n, L. Hussey n, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸

Contributors: P. Reddy n, I. Bryan n, Z. Bryan n, W. Guo n, L. Hussey n, R. Collazo n, Z. Sitar n

Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 journal article

The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

APPLIED PHYSICS LETTERS, 104(20).

By: B. Gaddy n, Z. Bryan n, I. Bryan n, J. Xie*, R. Dalmau*, B. Moody*, Y. Kumagai*, T. Nagashima* ...

co-author countries: Japan 🇯🇵 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 journal article

Vacancy defects in UV-transparent HVPE-AlN

Physica Status Solidi (c), 11(3-4), 405–407.

By: T. Kuittinen*, F. Tuomisto*, Y. Kumagai*, T. Nagashima*, T. Kinoshita*, A. Koukitu*, R. Collazo n, Z. Sitar n

co-author countries: Finland 🇫🇮 Japan 🇯🇵 United States of America 🇺🇸
author keywords: AlN; UV-transparency; vacancies; positron annihilation
Sources: Crossref, ORCID
Added: February 24, 2020

2013 journal article

Aqueous Stability of Ga- and N-Polar Gallium Nitride

LANGMUIR, 29(1), 216–220.

By: C. Foster n, R. Collazo n, Z. Sitar n & A. Ivanisevic n

co-author countries: United States of America 🇺🇸
MeSH headings : Drug Stability; Gallium / chemistry; Microscopy, Atomic Force; Photoelectron Spectroscopy; Semiconductors; Water / chemistry
Sources: Web Of Science, ORCID
Added: August 6, 2018

2013 journal article

Cell Behavior on Gallium Nitride Surfaces: Peptide Affinity Attachment versus Covalent Functionalization

LANGMUIR, 29(26), 8377–8384.

By: C. Foster n, R. Collazo n, Z. Sitar n & A. Ivanisevic n

co-author countries: United States of America 🇺🇸
MeSH headings : Amino Acid Sequence; Animals; Biocompatible Materials / chemistry; Biocompatible Materials / pharmacology; Cell Adhesion / drug effects; Cell Count; Gallium / chemistry; Gallium / pharmacology; Microscopy, Atomic Force; Molecular Sequence Data; Oligopeptides / chemistry; PC12 Cells; Photoelectron Spectroscopy; Rats; Surface Properties
Sources: Web Of Science, ORCID
Added: August 6, 2018

2013 journal article

Comparative study of etching high crystalline quality AlN and GaN

JOURNAL OF CRYSTAL GROWTH, 366, 20–25.

By: W. Guo n, J. Xie*, C. Akouala n, S. Mita*, A. Rice n, J. Tweedie n, I. Bryan n, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
author keywords: Etching; Surfaces; Nitrides; Semiconducting III-V materials; Light emitting diodes
Sources: Web Of Science, ORCID
Added: August 6, 2018

2013 journal article

Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements

Journal of Applied Physics, 113(10), 103504.

By: R. Kirste n, M. Hoffmann n, J. Tweedie n, Z. Bryan n, G. Callsen*, T. Kure*, C. Nenstiel*, M. Wagner* ...

co-author countries: Germany 🇩🇪 United States of America 🇺🇸
Sources: Web Of Science, ORCID, Crossref
Added: August 6, 2018

2013 journal article

Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions

Applied Physics Letters, 103(12).

By: B. Neuschl*, K. Thonke*, M. Feneberg*, R. Goldhahn*, T. Wunderer*, Z. Yang*, N. Johnson*, J. Xie* ...

co-author countries: Germany 🇩🇪 United States of America 🇺🇸
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2013 journal article

Epitaxial PbxZr1-xTiO3 on GaN

JOURNAL OF APPLIED PHYSICS, 113(7).

By: E. Paisley n, H. Craft n, M. Losego n, H. Lu*, A. Gruverman*, R. Collazo n, Z. Sitar n, J. Maria n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2013 article

Epitaxial lead zirconate titanate on gallium nitride (vol 113, 074107, 2013)

Journal of Applied Physics, Vol. 114.

By: E. Paisley, H. Craft, M. Losego, H. Lu, A. Gruverman, R. Collazo, Z. Sitar, J. Maria

Source: NC State University Libraries
Added: August 6, 2018

2013 journal article

Erratum: “Kinase detection with gallium nitride based high electron mobility transistors” [Appl. Phys. Lett. 103, 013701 (2013)]

Applied Physics Letters, 103(8), 089902.

By: M. Makowski*, I. Bryan n, Z. Sitar n, C. Arellano n, J. Xie*, R. Collazo n, A. Ivanisevic n

co-author countries: United States of America 🇺🇸
Sources: Crossref, ORCID, Web Of Science
Added: August 6, 2018

2013 journal article

Excitonic emission dynamics in homoepitaxial AlN films studied using polarized and spatio-time-resolved cathodoluminescence measurements

APPLIED PHYSICS LETTERS, 103(14).

By: S. Chichibu*, K. Hazu*, Y. Ishikawa*, M. Tashiro*, T. Ohtomo*, K. Furusawa*, A. Uedono*, S. Mita* ...

co-author countries: Japan 🇯🇵 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2013 journal article

Fermi Level Control of Point Defects During Growth of Mg-Doped GaN

JOURNAL OF ELECTRONIC MATERIALS, 42(5), 815–819.

By: Z. Bryan n, M. Hoffmann n, J. Tweedie n, R. Kirste n, G. Callsen*, I. Bryan n, A. Rice n, M. Bobea n ...

co-author countries: Germany 🇩🇪 United States of America 🇺🇸
author keywords: Mg; GaN; UV excitation; Photoluminescence; Metal-organic chemical vapordeposition (MOCVD)
Sources: Web Of Science, ORCID
Added: August 6, 2018

2013 journal article

Ge doped GaN with controllable high carrier concentration for plasmonic applications

Applied Physics Letters, 103(24), 242107.

By: R. Kirste n, M. Hoffmann n, E. Sachet n, M. Bobea n, Z. Bryan n, I. Bryan n, C. Nenstiel*, A. Hoffmann* ...

co-author countries: Germany 🇩🇪 United States of America 🇺🇸
Sources: Crossref, ORCID, NC State University Libraries
Added: August 6, 2018

2013 journal article

Kinase detection with gallium nitride based high electron mobility transistors

Applied Physics Letters, 103(1), 013701.

By: M. Makowski*, I. Bryan n, Z. Sitar n, C. Arellano n, J. Xie*, R. Collazo n, A. Ivanisevic n

co-author countries: United States of America 🇺🇸
Sources: Crossref, ORCID, NC State University Libraries
Added: August 6, 2018

2013 journal article

Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures

APPLIED PHYSICS LETTERS, 102(17).

By: J. Xie*, S. Mita*, Z. Bryan n, W. Guo n, L. Hussey n, B. Moody*, R. Schlesser*, R. Kirste n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2013 journal article

Physisorption of functionalized gold nanoparticles on AlGaN/GaN high electron mobility transistors for sensing applications

Applied Physics Letters, 102(7), 074102.

By: M. Makowski*, S. Kim*, M. Gaillard*, D. Janes*, M. Manfra*, I. Bryan n, Z. Sitar n, C. Arellano n ...

co-author countries: United States of America 🇺🇸
Sources: Crossref, ORCID
Added: February 24, 2020

2013 journal article

Polarity control and growth of lateral polarity structures in AlN

Applied Physics Letters, 102(18).

By: R. Kirste n, S. Mita, L. Hussey n, M. Hoffmann n, W. Guo n, I. Bryan n, Z. Bryan n, J. Tweedie n ...

co-author countries: United States of America 🇺🇸
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2013 journal article

Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds

APPLIED PHYSICS EXPRESS, 6(7).

By: T. Sochacki*, Z. Bryan n, M. Amilusik*, R. Collazo n, B. Lucznik*, J. Weyher*, G. Nowak*, B. Sadovyi* ...

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2013 journal article

Publisher's Note: “Epitaxial lead zirconate titanate on gallium nitride” [J. Appl. Phys. 113, 074107 (2013)]

Journal of Applied Physics, 114(23), 239901.

By: E. Paisley n, H. Craft n, M. Losego n, H. Lu*, A. Gruverman*, R. Collazo n, Z. Sitar n, J. Maria n

co-author countries: United States of America 🇺🇸
Sources: Crossref, ORCID
Added: August 28, 2020

2013 journal article

Refractive index of III-metal-polar and N-polar AlGaN waveguides grown by metal organic chemical vapor deposition

APPLIED PHYSICS LETTERS, 102(22).

By: M. Rigler*, M. Zgonik*, M. Hoffmann n, R. Kirste n, M. Bobea n, R. Collazo n, Z. Sitar n, S. Mita*, M. Gerhold*

co-author countries: Slovenia 🇸🇮 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2013 journal article

Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition

APPLIED PHYSICS LETTERS, 102(6).

By: I. Bryan n, A. Rice n, L. Hussey n, Z. Bryan n, M. Bobea n, S. Mita*, J. Xie*, R. Kirste n, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2013 journal article

Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

APPLIED PHYSICS LETTERS, 103(16).

By: B. Gaddy n, Z. Bryan n, I. Bryan n, R. Kirste n, J. Xie*, R. Dalmau*, B. Moody*, Y. Kumagai* ...

co-author countries: Japan 🇯🇵 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2013 journal article

X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN

JOURNAL OF APPLIED PHYSICS, 113(12).

By: M. Bobea n, J. Tweedie n, I. Bryan n, Z. Bryan n, A. Rice n, R. Dalmau*, J. Xie*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2012 journal article

Gold Nanoparticles: Weakly Charged Cationic Nanoparticles Induce DNA Bending and Strand Separation (Adv. Mater. 31/2012)

Advanced Materials, 24(31), 4221–4221.

By: J. Railsback n, A. Singh n, R. Pearce n, T. McKnight*, R. Collazo n, Z. Sitar n, Y. Yingling n, A. Melechko n

co-author countries: United States of America 🇺🇸
Sources: Crossref, ORCID
Added: January 6, 2020

2012 journal article

Lateral epitaxial overgrowth of nitrogen polar GaN on smooth nitrogen polar GaN templates by metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 112(11).

By: L. Hussey n, S. Mita*, J. Xie*, W. Guo n, C. Akouala n, J. Rajan n, I. Bryan n, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2012 journal article

On the origin of the 265 nm absorption band in AlN bulk crystals

APPLIED PHYSICS LETTERS, 100