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Works (245)

Updated: March 19th, 2025 05:05

2025 journal article

Roles of Al-vacancy complexes on the luminescence spectra of low dislocation density Si-doped AlN grown by halide vapor phase epitaxy

Applied Physics Letters.

topics (OpenAlex): GaN-based semiconductor devices and materials; Acoustic Wave Resonator Technologies; ZnO doping and properties
Source: ORCID
Added: March 18, 2025

2024 journal article

Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activation

JOURNAL OF APPLIED PHYSICS, 135(2).

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Metal and Thin Film Mechanics
Sources: ORCID, Web Of Science, NC State University Libraries
Added: January 28, 2024

2024 personal communication

High-current, high-voltage AlN Schottky barrier diodes

Quinones, C. E., Khachariya, D., Reddy, P., Mita, S., Almeter, J., Bagheri, P., … Sitar, Z. (2024, October 1).

By: C. Quinones, D. Khachariya*, P. Reddy*, S. Mita*, J. Almeter, P. Bagheri, S. Rathkanthiwar*, R. Kirste* ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Acoustic Wave Resonator Technologies; Ga2O3 and related materials
Sources: Web Of Science, NC State University Libraries, ORCID
Added: October 1, 2024

2023 journal article

(Invited) Understanding Mg-Related Defects for Vertical GaN p-n Junction Structures Via p-Type Ion Implantation

ECS Meeting Abstracts.

topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: February 9, 2024

2023 article

Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing

Stein, S. R., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., Tweedie, J., … Pavlidis, S. (2023, December 12). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12.

By: S. Stein n, D. Khachariya*, W. Mecouch*, S. Mita*, P. Reddy*, J. Tweedie*, K. Sierakowski*, G. Kamler* ...

Contributors: S. Stein n, D. Khachariya*, W. Mecouch*, S. Mita*, P. Reddy*, J. Tweedie*, K. Sierakowski*, G. Kamler* ...

author keywords: Schottky diodes; Annealing; Ion implantation; Schottky barriers; P-n junctions; Resistance; Gallium nitride; junction barrier Schottky (JBS) diode; Mg activation; p-n diode; power semiconductor device; Schottky contact; ultrahigh-pressure annealing (UHPA); vertical GaN
topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Silicon Carbide Semiconductor Technologies
Sources: Web Of Science, NC State University Libraries, ORCID
Added: January 2, 2024

2023 journal article

Anderson transition in compositionally graded p-AlGaN

JOURNAL OF APPLIED PHYSICS, 134(19).

By: S. Rathkanthiwar n, P. Reddy*, C. Quinones n, J. Loveless n, M. Kamiyama n, P. Bagheri n, D. Khachariya*, T. Eldred n ...

Contributors: S. Rathkanthiwar n, P. Reddy*, C. Quiñones n, J. Loveless n, M. Kamiyama n, P. Bagheri n, D. Khachariya*, T. Eldred n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Acoustic Wave Resonator Technologies
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Sources: Web Of Science, NC State University Libraries, ORCID
Added: November 16, 2023

2023 article

Chemical Vapor Deposition of Monolayer MoS2 on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction Optoelectronics

Sengupta, R., Vaidya, S., Szymanski, D., Khachariya, D., Bockowski, M., Kamler, G., … Pavlidis, S. (2023, March 24). ACS APPLIED NANO MATERIALS, Vol. 3.

By: R. Sengupta n, S. Vaidya n, D. Szymanski n, D. Khachariya*, M. Bockowski*, G. Kamler*, P. Reddy*, Z. Sitar n, R. Collazo n, S. Pavlidis n

Contributors: R. Sengupta n, S. Vaidya n, D. Szymanski n, D. Khachariya*, M. Bockowski*, G. Kamler*, P. Reddy*, Z. Sitar n, R. Collazo n, S. Pavlidis n

author keywords: N-polar; gallium nitride; chemomechanical polishing; MoS 2; monolayer; chemical vapor deposition
topics (OpenAlex): 2D Materials and Applications; MXene and MAX Phase Materials; Nanowire Synthesis and Applications
Sources: Web Of Science, NC State University Libraries, ORCID
Added: March 25, 2023

2023 journal article

Demonstration of near-ideal Schottky contacts to Si-doped AlN

APPLIED PHYSICS LETTERS, 123(17).

By: C. Quinones n, D. Khachariya*, P. Bagheri n, P. Reddy*, S. Mita*, R. Kirste*, S. Rathkanthiwar n, J. Tweedie* ...

Contributors: C. Quiñones n, D. Khachariya*, P. Bagheri n, P. Reddy*, S. Mita*, R. Kirste*, S. Rathkanthiwar n, J. Tweedie* ...

topics (OpenAlex): Semiconductor materials and devices; GaN-based semiconductor devices and materials; Silicon Carbide Semiconductor Technologies
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries, ORCID
Added: October 25, 2023

2023 journal article

High conductivity and low activation energy in p-type AlGaN

Applied Physics Letters, 122(9).

By: S. Rathkanthiwar n, P. Bagheri n, D. Khachariya, S. Mita, C. Quiñones-García n, Y. Guan n, B. Moody, P. Reddy* ...

Contributors: S. Rathkanthiwar n, P. Bagheri n, D. Khachariya, S. Mita, C. Quiñones-García n, Y. Guan n, B. Moody, P. Reddy* ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Metal and Thin Film Mechanics
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: March 1, 2023

2023 journal article

High conductivity in Ge-doped AlN achieved by a non-equilibrium process

APPLIED PHYSICS LETTERS, 122(14).

By: P. Bagheri n, C. Quinones-Garcia n, D. Khachariya*, J. Loveless n, Y. Guan n, S. Rathkanthiwar n, P. Reddy*, R. Kirste* ...

Contributors: P. Bagheri n, C. Quiñones-Garcia n, D. Khachariya*, J. Loveless n, Y. Guan n, S. Rathkanthiwar n, P. Reddy*, R. Kirste* ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries, ORCID
Added: April 6, 2023

2023 journal article

High p-conductivity in AlGaN enabled by polarization field engineering

APPLIED PHYSICS LETTERS, 122(15).

By: S. Rathkanthiwar n, P. Reddy*, B. Moody*, C. Quinones-Garcia n, P. Bagheri n, D. Khachariya*, R. Dalmau*, S. Mita* ...

Contributors: S. Rathkanthiwar n, P. Reddy*, B. Moody*, C. Quiñones-García n, P. Bagheri n, D. Khachariya*, R. Dalmau*, S. Mita* ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Thermal properties of materials
Sources: ORCID, Web Of Science, NC State University Libraries
Added: April 19, 2023

2023 journal article

Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor

APPLIED PHYSICS EXPRESS, 16(3).

By: S. Stein n, D. Khachariya*, S. Mita*, M. Breckenridge n, J. Tweedie*, P. Reddy*, K. Sierakowski*, G. Kamler* ...

Contributors: S. Stein n, D. Khachariya*, S. Mita*, M. Breckenridge n, J. Tweedie*, P. Reddy*, K. Sierakowski*, G. Kamler* ...

author keywords: GaN; JBS diode; Schottky contact; ultra-high-pressure-annealing; ideality factor; ion implantation; barrier height
topics (OpenAlex): Semiconductor materials and interfaces; GaN-based semiconductor devices and materials; Semiconductor materials and devices
Sources: Web Of Science, NC State University Libraries, ORCID
Added: April 17, 2023

2022 journal article

(Invited, Digital Presentation) Exploring Interfaces and Polarity to Realize Vertical III-Nitride Superjunction Devices

ECS Meeting Abstracts.

By: S. Pavlidis n, D. Khachariya n, D. Szymanski n, P. Reddy*, E. Kohn*, Z. Sitar n, R. Collazo n

topics (OpenAlex): GaN-based semiconductor devices and materials; Silicon Carbide Semiconductor Technologies
Source: ORCID
Added: July 15, 2022

2022 journal article

<p>The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN</p>

APPLIED PHYSICS LETTERS, 120(3).

By: K. Wang n, R. Kirste n, S. Mita n, S. Washiyama n, W. Mecouch n, P. Reddy n, R. Collazo n, Z. Sitar n

Contributors: K. Wang n, R. Kirste n, S. Mita n, S. Washiyama n, W. Mecouch n, P. Reddy n, R. Collazo n, Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
14. Life Below Water (OpenAlex)
Sources: Web Of Science, NC State University Libraries, ORCID
Added: May 2, 2022

2022 article

Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates

Rathkanthiwar, S., Graziano, M. B., Tweedie, J., Mita, S., Kirste, R., Collazo, R., & Sitar, Z. (2022, October 25). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 10.

By: S. Rathkanthiwar n, M. Graziano n, J. Tweedie*, S. Mita*, R. Kirste*, R. Collazo n, Z. Sitar n

author keywords: AlGaN; AlN substrates; strain relaxation; tilt
topics (OpenAlex): GaN-based semiconductor devices and materials; Acoustic Wave Resonator Technologies; Ga2O3 and related materials
Sources: Web Of Science, NC State University Libraries
Added: October 31, 2022

2022 journal article

Doping and compensation in heavily Mg doped Al-rich AlGaN films

APPLIED PHYSICS LETTERS, 120(8).

By: P. Bagheri n, A. Klump n, S. Washiyama n, M. Breckenridge n, J. Kim n, Y. Guan n, D. Khachariya n, C. Quinones-Garcia n ...

Contributors: P. Bagheri n, A. Klump n, S. Washiyama n, M. Hayden Breckenridge n, J. Kim n, Y. Guan n, D. Khachariya n, C. Quiñones-García n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Semiconductor materials and devices
Sources: Web Of Science, NC State University Libraries, ORCID
Added: June 20, 2022

2022 journal article

GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions

JOURNAL OF APPLIED PHYSICS, 131(1).

By: D. Szymanski n, D. Khachariya n, T. Eldred n, P. Bagheri n, S. Washiyama n, A. Chang*, S. Pavlidis n, R. Kirste* ...

Contributors: D. Szymanski n, D. Khachariya n, T. Eldred n, P. Bagheri n, S. Washiyama n, A. Chang*, S. Pavlidis n, R. Kirste* ...

topics (OpenAlex): Metal and Thin Film Mechanics; GaN-based semiconductor devices and materials; Semiconductor materials and devices
Sources: Web Of Science, NC State University Libraries, ORCID
Added: January 4, 2022

2022 journal article

High electron mobility in AlN:Si by point and extended defect management

JOURNAL OF APPLIED PHYSICS, 132(18).

Contributors: P. Bagheri n, C. Quiñones-Garcia n, D. Khachariya n, S. Rathkanthiwar n, P. Reddy n, R. Kirste n, S. Mita n, J. Tweedie n, R. Collazo n, Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
Sources: Web Of Science, NC State University Libraries, ORCID
Added: November 10, 2022

2022 article

Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3.

By: P. Reddy*, W. Mecouch*, M. Breckenridge n, D. Khachariya n, P. Bagheri n, J. Kim n, Y. Guan n, S. Mita* ...

Contributors: P. Reddy*, W. Mecouch*, M. Hayden Breckenridge n, D. Khachariya n, P. Bagheri n, J. Hyun Kim n, Y. Guan n, S. Mita* ...

author keywords: AlGaN; APD; UVC
topics (OpenAlex): Ga2O3 and related materials; GaN-based semiconductor devices and materials; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries, ORCID
Added: March 11, 2022

2022 journal article

Low resistivity, p-type, N-Polar GaN achieved by chemical potential control

APPLIED PHYSICS EXPRESS, 15(8).

By: S. Rathkanthiwar n, D. Szymanski n, D. Khachariya n, P. Bagheri n, J. Kim n, S. Mita*, P. Reddy*, E. Kohn n ...

Contributors: S. Rathkanthiwar n, D. Szymanski n, D. Khachariya n, P. Bagheri n, J. Kim n, S. Mita*, P. Reddy*, E. Kohn n ...

author keywords: N-polar GaN; p doping; compensation; chemical potential control
topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries, ORCID
Added: August 8, 2022

2022 journal article

On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).

By: A. Jadhav*, P. Bagheri n, A. Klump n, D. Khachariya n, S. Mita*, P. Reddy*, S. Rathkanthiwar n, R. Kirste* ...

Contributors: A. Jadhav*, P. Bagheri n, A. Klump n, D. Khachariya n, S. Mita*, P. Reddy*, S. Rathkanthiwar n, R. Kirste* ...

author keywords: III-nitride; Mg-doped AlGaN; ionization energy; mobility; contact resistance
topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Semiconductor materials and devices
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries, ORCID
Added: November 6, 2021

2022 journal article

On the conduction mechanism in compositionally graded AlGaN

APPLIED PHYSICS LETTERS, 121(7).

By: S. Rathkanthiwar n, P. Bagheri n, D. Khachariya n, J. Kim n, Y. Kajikawa n, P. Reddy n, S. Mita n, R. Kirste n ...

Contributors: S. Rathkanthiwar n, P. Bagheri n, D. Khachariya n, J. Kim n, Y. Kajikawa n, P. Reddy n, S. Mita n, R. Kirste n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries, ORCID
Added: August 29, 2022

2022 journal article

Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices

APPLIED PHYSICS EXPRESS, 15(5).

Contributors: S. Rathkanthiwar n, P. Bagheri n, D. Khachariya n, S. Mita*, S. Pavlidis n, P. Reddy*, R. Kirste*, J. Tweedie*, Z. Sitar n, R. Collazo n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries, ORCID
Added: April 25, 2022

2022 journal article

Pseudomorphic growth of thick Al0.6Ga0.4N epilayers on AlN substrates

APPLIED PHYSICS LETTERS, 120(20).

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Metal and Thin Film Mechanics
Sources: Web Of Science, NC State University Libraries
Added: May 31, 2022

2022 journal article

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS, 120(17).

By: D. Khachariya n, S. Mita*, P. Reddy*, S. Dangi n, J. Dycus*, P. Bagheri n, M. Breckenridge n, R. Sengupta n ...

Contributors: D. Khachariya n, S. Mita*, P. Reddy*, S. Dangi n, J. Dycus*, P. Bagheri n, M. Breckenridge n, R. Sengupta n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries, ORCID
Added: May 31, 2022

2022 article

Spintronic Terahertz Emission in Ultrawide Bandgap Semiconductor/Ferromagnet Heterostructures

Comstock, A., Biliroglu, M., Seyitliyev, D., McConnell, A., Vetter, E., Reddy, P., … Sun, D. (2022, October 31). ADVANCED OPTICAL MATERIALS, Vol. 10.

By: A. Comstock n, M. Biliroglu n, D. Seyitliyev n, A. McConnell n, E. Vetter n, P. Reddy*, R. Kirste*, D. Szymanski* ...

Contributors: A. Comstock n, M. Biliroglu n, D. Seyitliyev n, A. McConnell n, E. Vetter n, P. Reddy*, R. Kirste*, D. Szymanski* ...

author keywords: spintronics; terahertz; two-dimensional electron gas; ultrawide bandgap semiconductors
topics (OpenAlex): Terahertz technology and applications; Quantum and electron transport phenomena; Topological Materials and Phenomena
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries, ORCID
Added: November 14, 2022

2022 journal article

Systematic oxygen impurity reduction in smooth N-polar GaN by chemical potential control

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).

By: D. Szymanski*, K. Wang, F. Kaess*, R. Kirste*, S. Mita*, P. Reddy*, Z. Sitar*, R. Collazo*

Contributors: D. Szymanski*, K. Wang, F. Kaess*, R. Kirste*, S. Mita*, P. Reddy*, Z. Sitar*, R. Collazo*

author keywords: oxygen; impurity; semiconductor; nitride; chemical potential; defect
topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries, ORCID
Added: June 19, 2023

2022 article

Tracking of Point Defects in the Full Compositional Range of AlGaN via Photoluminescence Spectroscopy

Hyun Kim, J., Bagheri, P., Kirste, R., Reddy, P., Collazo, R., & Sitar, Z. (2022, December 9). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 12.

By: J. Hyun Kim n, P. Bagheri n, R. Kirste*, P. Reddy*, R. Collazo n & Z. Sitar n

Contributors: J. Hyun Kim n, P. Bagheri n, R. Kirste*, P. Reddy*, R. Collazo n & Z. Sitar n

author keywords: AlGaN; AlN; defects; GaN; photoluminescence
topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Semiconductor materials and devices
Sources: Web Of Science, NC State University Libraries, ORCID
Added: December 10, 2022

2022 journal article

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

APPLIED PHYSICS EXPRESS, 15(10).

By: D. Khachariya*, S. Stein n, W. Mecouch*, M. Breckenridge n, S. Rathkanthiwar n, S. Mita*, B. Moody*, P. Reddy* ...

Contributors: D. Khachariya*, S. Stein n, W. Mecouch*, M. Breckenridge n, S. Rathkanthiwar n, S. Mita*, B. Moody*, P. Reddy* ...

author keywords: GaN; junction barrier Schottky diode; low ON-resistance; high breakdown voltage; Mg ion implantation; ultra-high-pressure anneal
topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Silicon Carbide Semiconductor Technologies
Sources: Web Of Science, NC State University Libraries, ORCID
Added: October 3, 2022

2021 journal article

(Invited) Ion Implantation and Polarity Control: Paths Toward a III-Nitride Superjunction

ECS Meeting Abstracts.

By: R. Collazo*, D. Szymanski, D. Khachariya, M. Breckenridge, Y. Guan, P. Bagheri, P. Reddy, R. Kirste ...

topics (OpenAlex): Semiconductor materials and devices; Diamond and Carbon-based Materials Research; Ion-surface interactions and analysis
Source: ORCID
Added: November 12, 2021

2021 journal article

A pathway to highly conducting Ge-doped AlGaN

JOURNAL OF APPLIED PHYSICS, 130(20).

By: P. Bagheri n, J. Kim n, S. Washiyama n, P. Reddy*, A. Klump n, R. Kirste*, S. Mita*, R. Collazo n, Z. Sitar n

Contributors: P. Bagheri n, J. Kim n, S. Washiyama n, P. Reddy*, A. Klump n, R. Kirste*, S. Mita*, R. Collazo n, Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
Sources: Web Of Science, NC State University Libraries, ORCID
Added: November 23, 2021

2021 journal article

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

APPLIED PHYSICS LETTERS, 118(2).

By: M. Breckenridge n, J. Tweedie n, P. Reddy n, Y. Guan n, P. Bagheri n, D. Szymanski n, S. Mita n, K. Sierakowski n ...

Contributors: M. Breckenridge n, J. Tweedie n, P. Reddy n, Y. Guan n, P. Bagheri n, D. Szymanski n, S. Mita n, K. Sierakowski n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: ORCID, Web Of Science, NC State University Libraries
Added: January 14, 2021

2021 journal article

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

APPLIED PHYSICS LETTERS, 118(11).

By: M. Breckenridge n, P. Bagheri n, Q. Guo n, B. Sarkar n, D. Khachariya n, S. Pavlidis n, J. Tweedie*, R. Kirste* ...

Contributors: M. Breckenridge n, P. Bagheri n, Q. Guo n, B. Sarkar n, D. Khachariya n, S. Pavlidis n, J. Tweedie*, R. Kirste* ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Metal and Thin Film Mechanics
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries, ORCID
Added: March 17, 2021

2021 journal article

Native oxide reconstructions on AlN and GaN (0001) surfaces

JOURNAL OF APPLIED PHYSICS, 129(19).

By: K. Mirrielees n, J. Dycus n, J. Baker n, P. Reddy*, R. Collazo n, Z. Sitar n, J. LeBeau*, D. Irving n

Contributors: K. Mirrielees n, J. Dycus n, J. Baker n, P. Reddy*, R. Collazo n, Z. Sitar n, J. Lebeau*, D. Irving n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
Sources: Web Of Science, NC State University Libraries, ORCID
Added: September 13, 2021

2021 journal article

On the Ge shallow-to-deep level transition in Al-rich AlGaN

JOURNAL OF APPLIED PHYSICS, 130(5).

By: P. Bagheri n, P. Reddy n, S. Mita n, D. Szymanski n, J. Kim n, Y. Guan n, D. Khachariya n, A. Klump n ...

Contributors: P. Bagheri n, P. Reddy n, S. Mita n, D. Szymanski n, J. Kim n, Y. Guan n, D. Khachariya n, A. Klump n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries, ORCID
Added: August 4, 2021

2021 journal article

On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers

APPLIED PHYSICS LETTERS, 118(12).

By: D. Khachariya n, D. Szymanski n, M. Breckenridge n, P. Reddy*, E. Kohn n, Z. Sitar n, R. Collazo n, S. Pavlidis n

Contributors: D. Khachariya n, D. Szymanski n, M. Breckenridge n, P. Reddy*, E. Kohn n, Z. Sitar n, R. Collazo n, S. Pavlidis n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and interfaces; Semiconductor materials and devices
Sources: Web Of Science, NC State University Libraries, ORCID
Added: March 24, 2021

2021 journal article

Role of oxygen diffusion in the dislocation reduction of epitaxial AlN on sapphire during high-temperature annealing

JOURNAL OF APPLIED PHYSICS, 130(20).

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Metal and Thin Film Mechanics
Sources: Web Of Science, NC State University Libraries
Added: December 6, 2021

2021 journal article

Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

APPLIED PHYSICS LETTERS, 118(4).

By: S. Washiyama n, K. Mirrielees n, P. Bagheri n, J. Baker n, J. Kim n, Q. Guo n, R. Kirste*, Y. Guan n ...

Contributors: S. Washiyama n, K. Mirrielees n, P. Bagheri n, J. Baker n, J. Kim n, Q. Guo n, R. Kirste*, Y. Guan n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
Sources: Web Of Science, NC State University Libraries, ORCID
Added: March 29, 2021

2021 article

Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength

Kirste, R., Sarkar, B., Reddy, P., Guo, Q., Collazo, R., & Sitar, Z. (2021, December 15). JOURNAL OF MATERIALS RESEARCH, Vol. 12.

By: R. Kirste n, B. Sarkar n, P. Reddy n, Q. Guo n, R. Collazo n & Z. Sitar n

Contributors: R. Kirste n, B. Sarkar n, P. Reddy n, Q. Guo n, R. Collazo n & Z. Sitar n

author keywords: Laser; Optoelectronic; Electrical properties; Optical properties; Dopant
topics (OpenAlex): GaN-based semiconductor devices and materials; Photocathodes and Microchannel Plates; Ga2O3 and related materials
Sources: Web Of Science, NC State University Libraries, ORCID
Added: January 3, 2022

2021 journal article

Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN

APPLIED PHYSICS LETTERS, 119(18).

By: P. Reddy*, D. Khachariya n, W. Mecouch*, M. Breckenridge n, P. Bagheri n, Y. Guan n, J. Kim n, S. Pavlidis n ...

Contributors: P. Reddy*, D. Khachariya n, W. Mecouch*, M. Breckenridge n, P. Bagheri n, Y. Guan n, J. Kim n, S. Pavlidis n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
Sources: Web Of Science, NC State University Libraries, ORCID
Added: November 3, 2021

2021 journal article

Substrate Modification during Chemical Vapor Deposition of hBN on Sapphire

ACS APPLIED MATERIALS & INTERFACES, 13(45), 54516–54526.

By: A. Bansal*, M. Hilse*, B. Huet*, K. Wang*, A. Kozhakhmetov*, J. Kim n, S. Bachu*, N. Alem* ...

author keywords: chemical vapor deposition; hexagonal boron nitride; 2D material; III-V nitrides; surface reconstruction; RHEED; dielectric breakdown
topics (OpenAlex): Diamond and Carbon-based Materials Research; Semiconductor materials and devices; Metal and Thin Film Mechanics
TL;DR: Under the typical growth conditions required for high crystalline quality hBN growth, A-plane sapphire provides a more chemically stable substrate, thus providing a more stable alternative substrate for high quality hbn growth. (via Semantic Scholar)
Sources: Web Of Science, NC State University Libraries
Added: February 21, 2022

2021 journal article

Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies

APPLIED PHYSICS LETTERS, 119(2).

By: J. Kim n, P. Bagheri n, S. Washiyama n, A. Klump n, R. Kirste*, S. Mita*, P. Reddy*, R. Collazo n, Z. Sitar n

Contributors: J. Kim n, P. Bagheri n, S. Washiyama n, A. Klump n, R. Kirste*, S. Mita*, P. Reddy*, R. Collazo n, Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Semiconductor materials and devices
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries, ORCID
Added: July 26, 2021

2021 article

Tuning Microbial Activity via Programmatic Alteration of Cell/Substrate Interfaces

Gulyuk, A. V., LaJeunesse, D. R., Collazo, R., & Ivanisevic, A. (2021, May 24). ADVANCED MATERIALS, Vol. 5.

By: A. Gulyuk n, D. LaJeunesse*, R. Collazo n & A. Ivanisevic n

author keywords: advanced programmable materials; biointerfaces; microorganisms; semiconductors
MeSH headings : Biofilms / drug effects; Biomimetic Materials / chemistry; Biomimetic Materials / pharmacology; Gram-Negative Bacteria / physiology; Gram-Positive Bacteria / physiology; Nanostructures / chemistry; Nanostructures / toxicity; Polymers / chemistry; Semiconductors; Zinc Oxide / chemistry; Zinc Oxide / pharmacology
topics (OpenAlex): Neuroscience and Neural Engineering; 3D Printing in Biomedical Research; Bacterial biofilms and quorum sensing
TL;DR: This work identifies promising inorganic material types along with target microorganisms that will be critical for future research on programmable biointerfacial structures and types of responses that can be observed in such hybrid systems. (via Semantic Scholar)
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Sources: Web Of Science, NC State University Libraries
Added: June 10, 2021

2021 article

UV illumination effects on AlGaN/GaN HEMTs for tunable RF oscillators

2021 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS), pp. 168–170.

By: S. Stein n, M. Robbins n, P. Reddy*, R. Collazo n & S. Pavlidis n

Contributors: S. Stein n, M. Robbins n, P. Reddy*, R. Collazo n & S. Pavlidis n

author keywords: AlGaN/GaN HEMTs; Optical Control; Illumination Effects; Oscillator
topics (OpenAlex): GaN-based semiconductor devices and materials; Radio Frequency Integrated Circuit Design; Semiconductor Quantum Structures and Devices
TL;DR: This is the first investigation of AlGaN/GaN HEMTs as optically-controlled microwave semiconductor devices for use in next-generation, high-power microwave photonics systems and measures show a modest change in S21 in the presence of UV illumination that induces internal photoconductive and photovoltaic effects. (via Semantic Scholar)
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries, ORCID
Added: July 26, 2021

2021 journal article

Weak localization and dimensional crossover in compositionally graded AlxGa1-xN

APPLIED PHYSICS LETTERS, 118(8).

By: A. Al-Tawhid n, A. Shafe n, P. Bagheri n, Y. Guan n, P. Reddy*, S. Mita*, B. Moody*, R. Collazo n, Z. Sitar n, K. Ahadi n

Contributors: A. Al-Tawhid n, A. Shafe n, P. Bagheri n, Y. Guan n, P. Reddy*, S. Mita*, B. Moody*, R. Collazo n, Z. Sitar n, K. Ahadi n

topics (OpenAlex): GaN-based semiconductor devices and materials; Quantum and electron transport phenomena; Ga2O3 and related materials
Sources: Web Of Science, NC State University Libraries, ORCID
Added: February 25, 2021

2020 journal article

(Invited) A Path Toward Vertical GaN Superjunction Devices

ECS Transactions, 98(6), 69–79.

Contributors: D. Khachariya n, D. Syzmanski, P. Reddy*, E. Kohn n, Z. Sitar n, R. Collazo n, S. Pavlidis n

topics (OpenAlex): Silicon Carbide Semiconductor Technologies
Source: ORCID
Added: January 11, 2021

2020 journal article

Cathodoluminescence of silicon doped aluminum nitride with scanning transmission electron microscopy

APL MATERIALS, 8(9).

By: M. Hauwiller*, D. Stowe, T. Eldred n, S. Mita n, R. Collazo n, Z. Sitar n, J. LeBeau*

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: October 19, 2020

2020 journal article

Complexes and compensation in degenerately donor doped GaN

APPLIED PHYSICS LETTERS, 117(10).

By: J. Baker n, P. Bowes n, J. Harris n, R. Collazo n, Z. Sitar n & D. Irving n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Semiconductor Quantum Structures and Devices
Sources: Web Of Science, ORCID, NC State University Libraries
Added: October 12, 2020

2020 journal article

High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates

Applied Physics Letters, 116(8), 081101.

By: P. Reddy*, M. Breckenridge n, Q. Guo n, A. Klump n, D. Khachariya n, S. Pavlidis n, W. Mecouch*, S. Mita* ...

Contributors: P. Reddy*, M. Hayden Breckenridge n, Q. Guo n, A. Klump n, D. Khachariya n, S. Pavlidis n, W. Mecouch*, S. Mita* ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Photocathodes and Microchannel Plates
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: February 25, 2020

2020 journal article

Hydride vapor phase epitaxy of Si -doped AlN layers using SiCl 4 as a doping gas

JOURNAL OF CRYSTAL GROWTH, 545.

By: R. Yamamoto*, N. Takekawa*, K. Goto*, T. Nagashima*, R. Dalmau*, R. Schlesser*, H. Murakami*, R. Collazo n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Semiconductor materials and devices
Sources: Web Of Science, NC State University Libraries
Added: July 6, 2020

2020 journal article

Modulating the Stress Response of E. coli at GaN Interfaces Using Surface Charge, Surface Chemistry, and Genetic Mutations

ACS APPLIED BIO MATERIALS, 3(10), 7211–7218.

By: S. Gleco n, P. Reddy*, R. Kirste*, R. Collazo n, D. LaJeunesse* & A. Ivanisevic n

Contributors: S. Gleco n, P. Reddy*, R. Kirste*, R. Collazo n, D. Lajeunesse* & A. Ivanisevic n

author keywords: gallium nitride; E. coli; UV light; surface charge; reactive oxygen species; calcium
topics (OpenAlex): bioluminescence and chemiluminescence research; Advanced biosensing and bioanalysis techniques; Analytical Chemistry and Sensors
TL;DR: The persistent photoconductivity properties of chemically treated gallium nitride substrates were used to evaluate the stress response of wild-type, ΔfliC, and ΔcsgG mutant E. coli exposed to charged surfaces to determine generational effects of the initial exposure on the physiology of the bacteria. (via Semantic Scholar)
Sources: Web Of Science, NC State University Libraries, ORCID
Added: September 30, 2020

2020 journal article

Recovery kinetics in high temperature annealed AlN heteroepitaxial films

JOURNAL OF APPLIED PHYSICS, 127(11).

By: S. Washiyama n, Y. Guan n, S. Mita*, R. Collazo n & Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; Acoustic Wave Resonator Technologies
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: April 20, 2020

2020 journal article

Role of polarity in SiN on Al/GaN and the pathway to stable contacts

Semiconductor Science and Technology, 35(5), 055007.

author keywords: SiN; AlGaN; GaN; passivation; polarity; polarization; interface
topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Semiconductor materials and interfaces
Source: ORCID
Added: February 19, 2020

2020 journal article

Shallow Si donor in ion-implanted homoepitaxial AlN

Applied Physics Letters, 116(17), 172103.

By: M. Breckenridge n, Q. Guo n, A. Klump n, B. Sarkar n, Y. Guan n, J. Tweedie n, R. Kirste n, S. Mita n ...

Contributors: M. Hayden Breckenridge n, Q. Guo n, A. Klump n, B. Sarkar n, Y. Guan n, J. Tweedie n, R. Kirste n, S. Mita n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: ORCID
Added: April 28, 2020

2020 journal article

Strain Recovery and Defect Characterization in Mg-Implanted Homoepitaxial GaN on High-Quality GaN Substrates

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 257(4).

By: Y. Wang*, K. Huynh*, M. Liao*, H. Yu*, T. Bai*, J. Tweedie, M. Breckenridge n, R. Collazo n ...

author keywords: defects; GaN; implantation; Mg ions
topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries
Added: March 16, 2020

2020 journal article

Study of Dislocations in Homoepitaxially and Heteroepitaxially Grown AlN Layers

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 217(24).

By: K. Goto*, N. Takekawa*, T. Nagashima*, R. Yamamoto*, G. Pozina, R. Dalmau*, R. Schlesser*, R. Collazo n ...

author keywords: aluminum nitride; dislocations; etch pits; hydride vapor phase epitaxy; ultrawide bandgap semiconductor
topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Metal and Thin Film Mechanics
Sources: Web Of Science, NC State University Libraries
Added: November 16, 2020

2020 journal article

author keywords: ultraviolet; light emitting diodes; InGaN; UV-LED; AlGaN
topics (OpenAlex): GaN-based semiconductor devices and materials; Photocathodes and Microchannel Plates; Ga2O3 and related materials
Sources: Web Of Science, NC State University Libraries, ORCID
Added: October 19, 2020

2019 journal article

Oxygen and silicon point defects in Al0.65Ga0.35N

PHYSICAL REVIEW MATERIALS, 3(5).

By: J. Harris n, B. Gaddy n, R. Collazo n, Z. Sitar n & D. Irving n

topics (OpenAlex): Semiconductor materials and devices; GaN-based semiconductor devices and materials; Ga2O3 and related materials
Sources: Web Of Science, NC State University Libraries
Added: June 17, 2019

2019 journal article

Quasi-phase-matched second harmonic generation of UV light using AlN waveguides

APPLIED PHYSICS LETTERS, 114(10).

topics (OpenAlex): Photorefractive and Nonlinear Optics; Advanced Fiber Laser Technologies; Acoustic Wave Resonator Technologies
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: April 2, 2019

2019 journal article

Structural characteristics of m-plane AlN substrates and homoepitaxial films

JOURNAL OF CRYSTAL GROWTH, 507, 389–394.

By: M. Graziano n, I. Bryan n, Z. Bryan n, R. Kirste n, J. Tweedie n, R. Collazo n, Z. Sitar n

author keywords: Characterization; High resolution x-ray diffraction; Surface structure; Crystal structure; Metalorganic chemical vapor deposition; Nitrides
topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; Acoustic Wave Resonator Technologies
Sources: Web Of Science, NC State University Libraries
Added: January 28, 2019

2019 article

The polarization field in Al-rich AlGaN multiple quantum wells

Guo, Q., Kirste, R., Mita, S., Tweedie, J., Reddy, P., Washiyama, S., … Sitar, Z. (2019, June 1). JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 58.

By: Q. Guo n, R. Kirste n, S. Mita n, J. Tweedie n, P. Reddy n, S. Washiyama n, M. Breckenridge n, R. Collazo n, Z. Sitar n

Contributors: Q. Guo n, R. Kirste n, S. Mita n, J. Tweedie n, P. Reddy n, S. Washiyama n, M. Breckenridge n, R. Collazo n, Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor Quantum Structures and Devices; Metal and Thin Film Mechanics
Sources: Web Of Science, NC State University Libraries, ORCID
Added: July 29, 2019

2019 journal article

The role of transient surface morphology on composition control in AlGaN layers and wells

APPLIED PHYSICS LETTERS, 114(3).

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Metal and Thin Film Mechanics
Sources: Web Of Science, NC State University Libraries
Added: February 11, 2019

2018 journal article

A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 124(11).

By: S. Washiyama n, P. Reddy*, F. Kaess n, R. Kirste*, S. Mita*, R. Collazo n, Z. Sitar n

Contributors: S. Washiyama n, P. Reddy*, F. Kaess n, R. Kirste*, S. Mita*, R. Collazo n, Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; nanoparticles nucleation surface interactions; Semiconductor materials and devices
Sources: Web Of Science, NC State University Libraries, ORCID
Added: October 16, 2018

2018 journal article

Bioelectronics communication: encoding yeast regulatory responses using nanostructured gallium nitride thin films

Nanoscale, 10(24), 11506–11516.

By: P. Snyder n, D. LaJeunesse*, P. Reddy*, R. Kirste*, R. Collazo n & A. Ivanisevic n

Contributors: P. Snyder n, D. Lajeunesse*, P. Reddy*, R. Kirste*, R. Collazo n & A. Ivanisevic n

MeSH headings : Cell Membrane / physiology; Cell Wall / physiology; Chitin / biosynthesis; Gallium / chemistry; Microscopy, Atomic Force; Nanostructures; Oxygen / chemistry; Saccharomyces cerevisiae / physiology; Semiconductors; Ultraviolet Rays
topics (OpenAlex): Molecular Communication and Nanonetworks; Photoreceptor and optogenetics research; Advanced biosensing and bioanalysis techniques
TL;DR: The work demonstrates how GaN nanostructured thin films can encode physiological responses in S. cerevisiae yeast and defines a strategy for bioelectronics communication where the roughness, surface chemistry and charge of the wide band gap semiconductor's thin film surface initiate the encoding of the yeast response. (via Semantic Scholar)
Sources: Crossref, NC State University Libraries, ORCID
Added: January 23, 2019

2018 review

Bulk and Surface Electronic Properties of Inorganic Materials: Tools to Guide Cellular Behavior

[Review of ]. SMALL METHODS, 2(9).

By: P. Snyder n, P. Reddy*, R. Kirste*, R. Collazo n & A. Ivanisevic n

Contributors: P. Snyder n, P. Reddy*, R. Kirste*, R. Collazo n & A. Ivanisevic n

author keywords: (photo)conductivity; charge; neural cells; piezoelectricity; polarity; semiconductors
topics (OpenAlex): Neuroscience and Neural Engineering; Photoreceptor and optogenetics research; Advanced Sensor and Energy Harvesting Materials
Sources: Web Of Science, NC State University Libraries, ORCID
Added: October 16, 2018

2018 journal article

Characterization of Pseudomonas aeruginosa Films on Different Inorganic Surfaces before and after UV Light Exposure

LANGMUIR, 34(36), 10806–10815.

By: A. Gulyuk n, D. LaJeunesse*, R. Collazo n & A. Ivanisevic n

topics (OpenAlex): Bacterial biofilms and quorum sensing; bioluminescence and chemiluminescence research; Biosensors and Analytical Detection
TL;DR: The collected analysis indicates that the alteration of the inorganic materials' surface chemistry can lead to differences in biofilm formation and variable response from P. aeruginosa cells. (via Semantic Scholar)
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Sources: Web Of Science, NC State University Libraries
Added: October 16, 2018

2018 journal article

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

APPLIED PHYSICS LETTERS, 112(6).

By: I. Bryan n, Z. Bryan n, S. Washiyama n, P. Reddy*, B. Gaddy n, B. Sarkar n, M. Breckenridge n, Q. Guo n ...

Contributors: I. Bryan n, Z. Bryan n, S. Washiyama n, P. Reddy*, B. Gaddy n, B. Sarkar n, M. Breckenridge n, Q. Guo n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
Sources: Web Of Science, NC State University Libraries, ORCID
Added: August 6, 2018

2018 journal article

Improvement in detection limit for time-of-flight SIMS analysis of dopants in GaN structures

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 36(3).

By: A. Klump n, C. Zhou n, F. Stevie n, R. Collazo n & Z. Sitar n

topics (OpenAlex): Ion-surface interactions and analysis; GaN-based semiconductor devices and materials; Semiconductor materials and devices
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2018 journal article

Noninvasive Stimulation of Neurotypic Cells Using Persistent Photoconductivity of Gallium Nitride

ACS Omega, 3(1), 615–621.

By: P. Snyder n, P. Reddy*, R. Kirste*, D. LaJeunesse*, R. Collazo n & A. Ivanisevic n

Contributors: P. Snyder n, P. Reddy*, R. Kirste*, D. Lajeunesse*, R. Collazo n & A. Ivanisevic n

topics (OpenAlex): Neuroscience and Neural Engineering; Photoreceptor and optogenetics research; Advanced Memory and Neural Computing
TL;DR: Analysis of the III-V semiconductor material by atomic force microscope, Kelvin probe force microscopy, photoconductivity, and X-ray photoelectron spectroscopy quantified bulk and surface charge, as well as chemical composition before and after exposure to UV light and cell culture media. (via Semantic Scholar)
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UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Sources: Crossref, NC State University Libraries, ORCID
Added: January 23, 2019

2018 conference paper

On Contacts to III-nitride deep-UV emitters

2018 3rd International Conference on Microwave and Photonics (ICMAP), 2018-January, 1–2.

By: B. Sarkar n, P. Reddy*, A. Klump n, R. Rounds n, M. Breckenridge n, B. Haidet n, S. Mita, R. Kirste, R. Collazo n, Z. Sitar n

Contributors: B. Sarkar n, P. Reddy*, A. Klump n, R. Rounds n, M. Breckenridge n, B. Haidet n, S. Mita, R. Kirste, R. Collazo n, Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Advancements in Semiconductor Devices and Circuit Design
Sources: NC State University Libraries, NC State University Libraries, ORCID
Added: August 6, 2018

2018 journal article

On compensation in Si-doped AlN

APPLIED PHYSICS LETTERS, 112(15).

By: J. Harris n, J. Baker n, B. Gaddy n, I. Bryan n, Z. Bryan n, K. Mirrielees n, P. Reddy*, R. Collazo n, Z. Sitar n, D. Irving n

Contributors: J. Harris n, J. Baker n, B. Gaddy n, I. Bryan n, Z. Bryan n, K. Mirrielees n, P. Reddy*, R. Collazo n, Z. Sitar n, D. Irving n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Semiconductor materials and devices
Sources: Web Of Science, NC State University Libraries, ORCID
Added: August 6, 2018

2018 journal article

Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(6).

By: P. Reddy n, S. Washiyama n, W. Mecouch n, L. Hernandez-Balderrama n, F. Kaess n, M. Breckenridge n, B. Sarkar n, B. Haidet n ...

Contributors: P. Reddy n, S. Washiyama n, W. Mecouch n, L. Hernandez-Balderrama n, F. Kaess n, M. Hayden Breckenridge n, B. Sarkar n, B. Haidet n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries, ORCID
Added: December 10, 2018

2018 journal article

Point-Defect Nature of the Ultraviolet Absorption Band in AIN

PHYSICAL REVIEW APPLIED, 9(5).

By: D. Alden n, J. Harris n, Z. Bryan n, J. Baker n, P. Reddy n, S. Mita*, G. Callsen*, A. Hoffmann* ...

Contributors: D. Alden n, J. Harris n, Z. Bryan n, J. Baker n, P. Reddy n, S. Mita*, G. Callsen*, A. Hoffmann* ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries, ORCID
Added: August 6, 2018

2018 journal article

Probing collective oscillation ofd-orbital electrons at the nanoscale

Applied Physics Letters, 112(6), 061102.

By: R. Dhall n, D. Vigil-Fowler*, J. Houston Dycus n, R. Kirste, S. Mita, Z. Sitar n, R. Collazo n, J. LeBeau*

topics (OpenAlex): Molecular Junctions and Nanostructures; Surface and Thin Film Phenomena; Electronic and Structural Properties of Oxides
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries, Crossref
Added: August 6, 2018

2018 journal article

Structure of Ultrathin Native Oxides on III-Nitride Surfaces

ACS APPLIED MATERIALS & INTERFACES, 10(13), 10607–10611.

author keywords: ultrathin oxides; surface reconstructions; group III nitrides; scanning transmission electron microscopy; density functional theory
topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Semiconductor materials and devices
TL;DR: In this study, aberration corrected scanning transmission electron microscopy reveals directly, and with depth dependence, the structure of ultrathin native oxides that form on AlN and GaN surfaces, and shows that the oxide layers are comprised of tetrahedra-octahedra cation-oxygen units, in an arrangement similar to bulk θ-Al2O3 and β-Ga2 O3. (via Semantic Scholar)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2018 journal article

The influence of point defects on the thermal conductivity of AlN crystals

JOURNAL OF APPLIED PHYSICS, 123(18).

By: R. Rounds n, B. Sarkar n, D. Alden n, Q. Guo n, A. Klump n, C. Hartmann*, T. Nagashima*, R. Kirste n ...

topics (OpenAlex): Thermal properties of materials; GaN-based semiconductor devices and materials; Silicon Carbide Semiconductor Technologies
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2018 journal article

Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes

JOURNAL OF APPLIED PHYSICS, 124(10).

topics (OpenAlex): Thermal properties of materials; GaN-based semiconductor devices and materials; Silicon Carbide Semiconductor Technologies
Sources: Web Of Science, NC State University Libraries
Added: October 16, 2018

2018 journal article

Thermal conductivity of single-crystalline AIN

APPLIED PHYSICS EXPRESS, 11(7).

By: R. Rounds n, B. Sarkar n, A. Klump n, C. Hartmann*, T. Nagashima*, R. Kirste n, A. Franke n, M. Bickermann* ...

topics (OpenAlex): Thermal properties of materials; GaN-based semiconductor devices and materials; Acoustic Wave Resonator Technologies
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2018 journal article

Variably doped nanostructured gallium nitride surfaces can serve as biointerfaces for neurotypic PC12 cells and alter their behavior

RSC ADVANCES, 8(64), 36722–36730.

By: P. Snyder n, P. Reddy*, R. Kirste*, D. LaJeunesse*, R. Collazo n & A. Ivanisevic n

Contributors: P. Snyder n, P. Reddy*, R. Kirste*, D. LaJeunesse*, R. Collazo n & A. Ivanisevic n

topics (OpenAlex): GaN-based semiconductor devices and materials; Nanowire Synthesis and Applications; Neuroscience and Neural Engineering
TL;DR: It is shown that persistent photoconductivity (PPC) can be used to alter the surface properties prior to chemicalfunctionalization, the concentration of dopants can have some effect on cellular behavior, and that chemical functionalization changes the surface potential before and after exposure to UV light. (via Semantic Scholar)
Sources: Web Of Science, NC State University Libraries, ORCID
Added: November 26, 2018

2017 article

(Invited) Material Considerations for the Development of III-nitride Power Devices

GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 7, Vol. 80, pp. 29–36.

By: B. Sarkar n, P. Reddy n, F. Kaess n, B. Haidet n, J. Tweedie*, S. Mita*, R. Kirste*, E. Kohn n ...

Contributors: B. Sarkar n, P. Reddy n, F. Kaess n, B. Haidet n, J. Tweedie*, S. Mita*, R. Kirste*, E. Kohn n, R. Collazo n, Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries, ORCID
Added: August 6, 2018

2017 journal article

Defect quasi Fermi level control-based C-N reduction in GaN: Evidence for the role of minority carriers

APPLIED PHYSICS LETTERS, 111(15).

By: P. Reddy n, F. Kaess n, J. Tweedie*, R. Kirste*, S. Mita*, R. Collazo n, Z. Sitar n

Contributors: P. Reddy n, F. Kaess n, J. Tweedie*, R. Kirste*, S. Mita*, R. Collazo n, Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries, ORCID
Added: August 6, 2018

2017 journal article

Defect-free Ni/GaN Schottky barrier behavior with high temperature stability

APPLIED PHYSICS LETTERS, 110(1).

By: P. Reddy n, B. Sarkar n, F. Kaess n, M. Gerhold*, E. Kohn n, R. Collazo n, Z. Sitar n

Contributors: P. Reddy n, B. Sarkar n, F. Kaess n, M. Gerhold*, E. Kohn n, R. Collazo n, Z. Sitar n

topics (OpenAlex): Semiconductor materials and interfaces; GaN-based semiconductor devices and materials; Semiconductor materials and devices
Sources: Web Of Science, NC State University Libraries, ORCID
Added: August 6, 2018

2017 journal article

High free carrier concentration in p-GaN grown on AlN substrates

APPLIED PHYSICS LETTERS, 111(3).

By: B. Sarkar n, S. Mita n, P. Reddy n, A. Klump n, F. Kaess n, J. Tweedie n, I. Bryan n, Z. Bryan n ...

Contributors: B. Sarkar n, S. Mita n, P. Reddy n, A. Klump n, F. Kaess n, J. Tweedie n, I. Bryan n, Z. Bryan n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; Semiconductor Quantum Structures and Devices
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries, ORCID
Added: August 6, 2018

2017 article

Model for the deep defect-related emission bands between 1.4 and 2.4 eV in AlN

Lamprecht, M., Jmerik, V. N., Collazo, R., Sitar, Z., Ivanov, S. V., & Thonke, K. (2017, August). PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 254.

By: M. Lamprecht*, V. Jmerik*, R. Collazo n, Z. Sitar n, S. Ivanov & K. Thonke*

author keywords: AlN; deep levels; defects; photoluminescence
topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Acoustic Wave Resonator Technologies
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2017 journal article

Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN

JAPANESE JOURNAL OF APPLIED PHYSICS, 56(10).

By: B. Haidet n, B. Sarkar n, P. Reddy n, I. Bryan n, Z. Bryan n, R. Kirste*, R. Collazo n, Z. Sitar n

Contributors: B. Haidet n, B. Sarkar n, P. Reddy n, I. Bryan n, Z. Bryan n, R. Kirste*, R. Collazo n, Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Metal and Thin Film Mechanics
Sources: Web Of Science, NC State University Libraries, ORCID
Added: August 6, 2018

2017 journal article

On Ni/Au Alloyed Contacts to Mg-Doped GaN

Journal of Electronic Materials, 47(1), 305–311.

By: B. Sarkar n, P. Reddy n, A. Klump n, F. Kaess n, R. Rounds n, R. Kirste n, S. Mita n, E. Kohn n, R. Collazo n, Z. Sitar n

Contributors: B. Sarkar n, P. Reddy n, A. Klump n, F. Kaess n, R. Rounds n, R. Kirste n, S. Mita n, E. Kohn n, R. Collazo n, Z. Sitar n

author keywords: Alloyed contact; p-GaN; TLM; specific contact resistance
topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Semiconductor materials and interfaces
Sources: Crossref, NC State University Libraries, Web Of Science, ORCID
Added: August 6, 2018

2017 journal article

Optical nonlinear and electro-optical coefficients in bulk aluminium nitride single crystals

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 254(9).

By: A. Majkic*, A. Franke n, R. Kirste, R. Schlesser*, R. Collazo n, Z. Sitar n, M. Zgonik*

author keywords: AlN; nonlinear optical properties; second harmonic generation; single crystals
topics (OpenAlex): Photorefractive and Nonlinear Optics; Advanced Fiber Laser Technologies; Acoustic Wave Resonator Technologies
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2017 journal article

Optical signatures of silicon and oxygen related DX centers in AlN

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 214(9).

By: K. Thonke*, M. Lamprecht*, R. Collazo n & Z. Sitar n

author keywords: AlN; DX centres; time-resolved photoluminescence
topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2017 journal article

Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatment

APPLIED PHYSICS EXPRESS, 10(7).

By: B. Sarkar n, B. Haidet n, P. Reddy n, R. Kirste n, R. Collazo n & Z. Sitar n

Contributors: B. Sarkar n, B. Haidet n, P. Reddy n, R. Kirste n, R. Collazo n & Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Semiconductor materials and devices
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Sources: Web Of Science, NC State University Libraries, ORCID
Added: August 6, 2018

2017 journal article

Persistent Photoconductivity, Nanoscale Topography, and Chemical Functionalization Can Collectively Influence the Behavior of PC12 Cells on Wide Bandgap Semiconductor Surfaces

SMALL, 13(24).

By: P. Snyder n, R. Kirste n, R. Collazo n & A. Ivanisevic n

topics (OpenAlex): GaN-based semiconductor devices and materials; Advanced Memory and Neural Computing; Advanced Sensor and Energy Harvesting Materials
TL;DR: Templates with lithographically defined regions with controlled roughness are generated during the semiconductor growth process and surface chemistry and initial conductivity difference are used to facilitate the extension to smoother areas on the GaN surface. (via Semantic Scholar)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2017 journal article

Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN

Journal of Applied Physics, 122(24), 245702.

By: P. Reddy n, S. Washiyama n, F. Kaess n, R. Kirste n, S. Mita n, R. Collazo n, Z. Sitar n

Contributors: P. Reddy n, S. Washiyama n, F. Kaess n, R. Kirste n, S. Mita n, R. Collazo n, Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
Sources: NC State University Libraries, NC State University Libraries, ORCID
Added: August 6, 2018

2017 journal article

Slow decay of a defect-related emission band at 2.05eV in AlN: Signatures of oxygen-related DX states

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 254(5).

By: M. Lamprecht*, C. Grund*, S. Bauer*, R. Collazo n, Z. Sitar n & K. Thonke*

author keywords: AlN; DX center; oxygen; slow decay; time-resolved photoluminescence
topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Acoustic Wave Resonator Technologies
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2017 journal article

Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy

APL MATERIALS, 5(9).

By: C. Shelton n, I. Bryan n, E. Paisley*, E. Sachet n, J. Ihlefeld*, N. Lavrik*, R. Collazo n, Z. Sitar n, J. Maria n

topics (OpenAlex): GaN-based semiconductor devices and materials; ZnO doping and properties; Semiconductor Quantum Structures and Devices
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2017 journal article

Structure and Chemistry of Oxide Surface Reconstructions in III-Nitrides Observed using STEM EELS

Microscopy and Microanalysis, 23(S1), 1444–1445.

By: J. Dycus n, K. Mirrielees n, E. Grimley n, R. Dhall n, R. Kirste*, S. Mita*, Z. Sitar n, R. Collazo n, D. Irving n, J. LeBeau n

topics (OpenAlex): Semiconductor materials and devices; Electronic and Structural Properties of Oxides; Machine Learning in Materials Science
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
14. Life Below Water (OpenAlex)
Sources: Crossref, NC State University Libraries
Added: February 19, 2020

2017 journal article

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

Advanced Electronic Materials, 4(1), 1600501.

author keywords: aluminum nitride; boron nitride; diamond; extreme environments; gallium oxide; power electronics; ultrawide bandgaps; UV-C
topics (OpenAlex): Ga2O3 and related materials; GaN-based semiconductor devices and materials; Semiconductor materials and devices
TL;DR: The UWBG semiconductor materials, such as high Al‐content AlGaN, diamond and Ga2O3, advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near‐term possibility. (via Semantic Scholar)
Sources: ORCID, Crossref, NC State University Libraries
Added: February 19, 2020

2016 journal article

Atomically Thin MoS2 Narrowband and Broadband Light Superabsorbers

ACS NANO, 10(8), 7493–7499.

By: L. Huang n, G. Li n, A. Gurarslan n, Y. Yu n, R. Kirste n, W. Guo n, J. Zhao n, R. Collazo n ...

Contributors: L. Huang n, G. Li n, A. Gurarslan n, Y. Yu n, R. Kirste n, W. Guo n, J. Zhao n, R. Collazo n ...

author keywords: MoS2; two-dimensional materials; light absorption; leaky mode; resonant photonics
topics (OpenAlex): 2D Materials and Applications; Plasmonic and Surface Plasmon Research; Perovskite Materials and Applications
TL;DR: A combined theoretical and experimental effort to enable strong light absorption in atomically thin MoS2 films by integrating the films with resonant photonic structures that are deterministically designed using a unique reverse design approach based on leaky mode coupling. (via Semantic Scholar)
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UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries, ORCID
Added: August 6, 2018

2016 journal article

Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 120(10).

By: F. Kaess n, S. Mita n, J. Xie n, P. Reddy n, A. Klump n, L. Hernandez-Balderrama n, S. Washiyama n, A. Franke n ...

Contributors: F. Kaess n, S. Mita n, J. Xie n, P. Reddy n, A. Klump n, L. Hernandez-Balderrama n, S. Washiyama n, A. Franke n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Semiconductor materials and devices
Sources: Web Of Science, NC State University Libraries, ORCID
Added: August 6, 2018

2016 journal article

Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications

APPLIED PHYSICS LETTERS, 108(26).

By: D. Alden n, W. Guo n, R. Kirste n, F. Kaess n, I. Bryan n, T. Troha n, A. Bagal n, P. Reddy n ...

Contributors: D. Alden n, W. Guo n, R. Kirste n, F. Kaess n, I. Bryan n, T. Troha n, A. Bagal n, P. Reddy n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; Acoustic Wave Resonator Technologies
Sources: Web Of Science, NC State University Libraries, ORCID
Added: August 6, 2018

2016 journal article

HgNO3 sensitivity of AlGaN/GaN field effect transistors functionalized with phytochelating peptides

AIP ADVANCES, 6(6).

By: N. Rohrbaugh n, L. Hernandez-Balderrama n, F. Kaess n, R. Kirste n, R. Collazo n & A. Ivanisevic n

topics (OpenAlex): GaN-based semiconductor devices and materials; Advanced biosensing and bioanalysis techniques; Analytical Chemistry and Sensors
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2016 journal article

High reflectivity III-nitride UV-C distributed Bragg reflectors for vertical cavity emitting lasers

JOURNAL OF APPLIED PHYSICS, 120(13).

By: A. Franke n, M. Hoffmann n, R. Kirste n, M. Bobea n, J. Tweedie n, F. Kaess n, M. Gerhold n, R. Collazo n, Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor Quantum Structures and Devices; Semiconductor Lasers and Optical Devices
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2016 journal article

High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

JOURNAL OF APPLIED PHYSICS, 119(14).

By: P. Reddy n, S. Washiyama n, F. Kaess n, M. Breckenridge n, L. Hernandez-Balderrama n, B. Haidet n, D. Alden n, A. Franke n ...

Contributors: P. Reddy n, S. Washiyama n, F. Kaess n, M. Hayden Breckenridge n, L. Hernandez-Balderrama n, B. Haidet n, D. Alden n, A. Franke n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
Sources: Web Of Science, NC State University Libraries, ORCID
Added: August 6, 2018

2016 journal article

Influence of high-temperature processing on the surface properties of bulk AlN substrates

JOURNAL OF CRYSTAL GROWTH, 446, 33–38.

By: S. Tojo, R. Yamamoto, R. Tanaka, Q. Thieu, R. Togashi, T. Nagashima, T. Kinoshita, R. Dalmau ...

author keywords: Impurities; Point defects; Hydride vapor phase epitaxy; Nitrides; Quartz; Semiconducting aluminum compounds
topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2016 journal article

Nanoscale topography, semiconductor polarity and surface functionalization: additive and cooperative effects on PC12 cell behavior

RSC ADVANCES, 6(100), 97873–97881.

By: P. Snyder n, R. Kirste n, R. Collazoa & A. Ivanisevic n

topics (OpenAlex): Semiconductor materials and devices; ZnO doping and properties; GaN-based semiconductor devices and materials
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2016 journal article

Nanoscopy of Phase Separation in InxGa1-xN Alloys

ACS APPLIED MATERIALS & INTERFACES, 8(35), 23160–23166.

author keywords: indium gallium nitride alloys; phase separation semiconductors; composition profile; nanospectroscopy; near-field
topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor Quantum Structures and Devices; Chalcogenide Semiconductor Thin Films
TL;DR: It is found that between 20 and 25% of particles show some level of Ga-rich phase separation over the entire sample region, which is in qualitative agreement with the known phase diagram of In1-xGaxN system. (via Semantic Scholar)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2016 journal article

Neurotypic cell attachment and growth on III-nitride lateral polarity structures

MATERIALS SCIENCE & ENGINEERING C-MATERIALS FOR BIOLOGICAL APPLICATIONS, 58, 1194–1198.

author keywords: Gallium nitride; Cell adhesion; Neurons; Semiconductor; Polarity
MeSH headings : Aluminum Compounds / chemistry; Aluminum Compounds / pharmacology; Animals; Cell Adhesion / drug effects; Cell Differentiation / drug effects; Gallium / chemistry; Gallium / pharmacology; Neurons / cytology; Neurons / drug effects; PC12 Cells; Rats; Semiconductors
topics (OpenAlex): Acoustic Wave Resonator Technologies; GaN-based semiconductor devices and materials; Mechanical and Optical Resonators
TL;DR: The designed material configuration is further explored for biochemical sensing, and the lateral polarity scheme may provide a route in assessing the non-specific protein adsorption to this varying nano-topography that drives the subsequent cell response. (via Semantic Scholar)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2016 journal article

Photoluminescence changes of III-Nitride lateral polarity structures after chemical functionalization

MATERIALS RESEARCH EXPRESS, 3(12).

By: N. Berg n, A. Franke n, R. Kirste n, R. Collazo n & A. Ivanisevic n

author keywords: gallium nitride; biomolecule; photoluminescence
topics (OpenAlex): Inorganic Chemistry and Materials; Luminescence Properties of Advanced Materials; Machine Learning in Materials Science
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2016 journal article

Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control

JOURNAL OF APPLIED PHYSICS, 120(18).

By: P. Reddy n, M. Hoffmann n, F. Kaess n, Z. Bryan n, I. Bryan n, M. Bobea n, A. Klump n, J. Tweedie n ...

Contributors: P. Reddy n, M. Hoffmann n, F. Kaess n, Z. Bryan n, I. Bryan n, M. Bobea n, A. Klump n, J. Tweedie n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; ZnO doping and properties; Ga2O3 and related materials
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries, ORCID
Added: August 6, 2018

2016 journal article

Polarity Control in Group-III Nitrides beyond Pragmatism

PHYSICAL REVIEW APPLIED, 5(5).

By: S. Mohn*, N. Stolyarchuk*, T. Markurt*, R. Kirste n, M. Hoffmann n, R. Collazo n, A. Courville*, R. Di Felice* ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; ZnO doping and properties
TL;DR: The authors use transmission electron microscopy and density-functional theory to see how exchange of aluminum, oxygen, and nitrogen within a sapphire substrate mediates the polarity of an epitaxial film of group-III nitride. (via Semantic Scholar)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2016 journal article

Selective area epitaxy of magnesium oxide thin films on gallium nitride surfaces

JOURNAL OF MATERIALS RESEARCH, 31(1), 36–45.

By: M. Losego*, E. Paisley*, H. Craft n, P. Lam n, E. Sachet n, S. Mita n, R. Collazo n, Z. Sitar n, J. Maria n

topics (OpenAlex): Semiconductor materials and devices; ZnO doping and properties; Ga2O3 and related materials
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2016 article

Strain engineered high reflectivity DBRs in the deep UV

GALLIUM NITRIDE MATERIALS AND DEVICES XI, Vol. 9748.

By: A. Franke n, P. Hoffmann n, L. Hernandez-Balderrama n, F. Kaess n, I. Bryan n, S. Washiyama n, M. Bobea n, J. Tweedie n ...

author keywords: Distributed Bragg Reflector (DBR); strain relaxation; MOCVD; AlGaN; Nitride
topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor Quantum Structures and Devices; Metal and Thin Film Mechanics
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2016 journal article

Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides

JOURNAL OF CRYSTAL GROWTH, 438, 81–89.

By: I. Bryan n, Z. Bryan n, S. Mita*, A. Rice n, J. Tweedie*, R. Collazo n, Z. Sitar n

author keywords: Growth models; Surface kinetics; Metalorganic chemical vapor deposition; Nitrides
topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; Semiconductor Quantum Structures and Devices
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2016 journal article

The effect of illumination power density on carbon defect configuration in silicon doped GaN

JOURNAL OF APPLIED PHYSICS, 120(23).

By: F. Kaess n, P. Reddy n, D. Alden n, A. Klump n, L. Hernandez-Balderrama n, A. Franke n, R. Kirste*, A. Hoffmann* ...

Contributors: F. Kaess n, P. Reddy n, D. Alden n, A. Klump n, L. Hernandez-Balderrama n, A. Franke n, R. Kirste*, A. Hoffmann*, R. Collazo n, Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Semiconductor materials and devices
Sources: Web Of Science, NC State University Libraries, ORCID
Added: August 6, 2018

2016 journal article

The role of surface kinetics on composition and quality of AlGaN

JOURNAL OF CRYSTAL GROWTH, 451, 65–71.

author keywords: Growth models; Surface kinetics; Metalorganic chemical vapor deposition; Nitrides
topics (OpenAlex): GaN-based semiconductor devices and materials; ZnO doping and properties; Metal and Thin Film Mechanics
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2016 journal article

Very slow decay of a defect related emission band at 2.4 eV in AlN: Signatures of the Si related shallow DX state

JOURNAL OF APPLIED PHYSICS, 119(15).

By: M. Lamprecht*, C. Grund*, B. Neuschl*, K. Thonke*, Z. Bryan n, R. Collazo n, Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2015 journal article

A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN

JOURNAL OF APPLIED PHYSICS, 117(24).

By: B. Haidet n, I. Bryan n, P. Reddy n, Z. Bryan n, R. Collazo n & Z. Sitar n

Contributors: B. Haidet n, I. Bryan n, P. Reddy n, Z. Bryan n, R. Collazo n & Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Metal and Thin Film Mechanics
Sources: Web Of Science, NC State University Libraries, ORCID
Added: August 6, 2018

2015 journal article

Adsorption and adhesion of common serum proteins to nanotextured gallium nitride

NANOSCALE, 7(6), 2360–2365.

By: L. Bain n, M. Hoffmann n, I. Bryan n, R. Collazo n & A. Ivanisevic n

MeSH headings : Adsorption; Biocompatible Materials / chemistry; Blood Proteins / chemistry; Cell Adhesion / drug effects; Fibrinogen / chemistry; Gallium / chemistry; Humans; Immunoglobulin G / chemistry; Metal Nanoparticles / chemistry; Microscopy, Atomic Force; Molecular Conformation; Nanotechnology / methods; Protein Binding; Reproducibility of Results; Serum Albumin / chemistry; Surface Properties
topics (OpenAlex): Nanowire Synthesis and Applications; Force Microscopy Techniques and Applications; Polymer Surface Interaction Studies
TL;DR: Interactions between common serum proteins - serum albumin, fibrinogen, and immunoglobulin G - and a nanotextured gallium nitride surface are explored and an assessment of the role of surface texture in dictating protein-surface interactions is provided. (via Semantic Scholar)
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UN Sustainable Development Goal Categories
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2015 journal article

Charge neutrality levels, barrier heights, and band offsets at polar AlGaN

APPLIED PHYSICS LETTERS, 107(9).

By: P. Reddy n, I. Bryan n, Z. Bryan n, J. Tweedie, S. Washiyama n, R. Kirste n, S. Mita*, R. Collazo n, Z. Sitar n

Contributors: P. Reddy n, I. Bryan n, Z. Bryan n, J. Tweedie, S. Washiyama n, R. Kirste n, S. Mita*, R. Collazo n, Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Semiconductor materials and interfaces
Sources: Web Of Science, NC State University Libraries, ORCID
Added: August 6, 2018

2015 article

Electronic Biosensors Based on III-Nitride Semiconductors

ANNUAL REVIEW OF ANALYTICAL CHEMISTRY, VOL 8, Vol. 8, pp. 149–169.

By: R. Kirste n, N. Rohrbaugh n, I. Bryan n, Z. Bryan n, R. Collazo n & A. Ivanisevic n

author keywords: semiconductors; surfaces; biosensors; nitrides; field-effect transistors
MeSH headings : Aluminum Compounds / chemistry; Biosensing Techniques; Electronics; Gallium / chemistry; Humans; Semiconductors
topics (OpenAlex): GaN-based semiconductor devices and materials; Nanowire Synthesis and Applications; Semiconductor materials and devices
TL;DR: GaN/GaN high-electron-mobility transistor (HEMT) biosensors demonstrated in the literature, including those detecting DNA, bacteria, cancer antibodies, and toxins, and the high potential for monitoring living cardiac, fibroblast, and nerve cells is discussed. (via Semantic Scholar)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2015 journal article

Fabrication of vertical Schottky barrier diodes on n-type freestanding AIN substrates grown by hydride vapor phase epitaxy

APPLIED PHYSICS EXPRESS, 8(6).

By: T. Kinoshita*, T. Nagashima*, T. Obata*, S. Takashima*, R. Yamamoto*, R. Togashi*, Y. Kumagai*, R. Schlesser* ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; Semiconductor materials and devices
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2015 article

Growth and characterization of AlxGa1-xN lateral polarity structures

Hoffmann, M. P., Kirste, R., Mita, S., Guo, W., Tweedie, J., Bobea, M., … Sitar, Z. (2015, May). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, pp. 1039–1042.

By: M. Hoffmann n, R. Kirste n, S. Mita*, W. Guo n, J. Tweedie n, M. Bobea n, I. Bryan n, Z. Bryan n ...

author keywords: AlGaN; growth; lateral polarity structures; optical phase matching
topics (OpenAlex): GaN-based semiconductor devices and materials; Acoustic Wave Resonator Technologies; Ga2O3 and related materials
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2015 journal article

High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

APPLIED PHYSICS LETTERS, 106(14).

By: Z. Bryan n, I. Bryan n, J. Xie*, S. Mita*, Z. Sitar n & R. Collazo n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2015 journal article

KOH based selective wet chemical etching of AlN, AlxGa1-xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode

APPLIED PHYSICS LETTERS, 106(8).

By: W. Guo n, R. Kirste n, I. Bryan n, Z. Bryan n, L. Hussey n, P. Reddy n, J. Tweedie, R. Collazo n, Z. Sitar n

Contributors: W. Guo n, R. Kirste n, I. Bryan n, Z. Bryan n, L. Hussey n, P. Reddy n, J. Tweedie, R. Collazo n, Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries, ORCID
Added: August 6, 2018

2015 journal article

Long-term stability assessment of AlGaN/GaN field effect transistors modified with peptides: Device characteristics vs. surface properties

AIP ADVANCES, 5(9).

By: N. Rohrbaugh n, I. Bryan n, Z. Bryan n, R. Collazo n & A. Ivanisevic n

topics (OpenAlex): GaN-based semiconductor devices and materials; Gas Sensing Nanomaterials and Sensors; Semiconductor materials and devices
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2015 journal article

Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes

Journal of Applied Physics, 117(11), 113107.

By: W. Guo n, R. Kirste n, Z. Bryan n, I. Bryan n, M. Gerhold*, R. Collazo n, Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; ZnO doping and properties
Source: Crossref
Added: December 27, 2020

2015 journal article

Optical characterization of Al- and N-polar AlN waveguides for integrated optics

APPLIED PHYSICS EXPRESS, 8(4).

By: M. Rigler*, J. Buh*, M. Hoffmann n, R. Kirste n, M. Bobea n, S. Mita*, M. Gerhold, R. Collazo n, Z. Sitar n, M. Zgonik*

topics (OpenAlex): Photorefractive and Nonlinear Optics; Advanced Fiber Laser Technologies; Photonic and Optical Devices
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2015 journal article

Optical properties of aluminum nitride single crystals in the THz region

OPTICAL MATERIALS EXPRESS, 5(10), 2106–2111.

By: A. Majkic*, U. Puc*, A. Franke n, R. Kirste n, R. Collazo n, Z. Sitar n, M. Zgonik*

topics (OpenAlex): Acoustic Wave Resonator Technologies; GaN-based semiconductor devices and materials; Terahertz technology and applications
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2015 journal article

Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates

APPLIED PHYSICS LETTERS, 106(23).

By: Z. Bryan n, I. Bryan n, S. Mita*, J. Tweedie*, Z. Sitar n & R. Collazo n

topics (OpenAlex): GaN-based semiconductor devices and materials; ZnO doping and properties; Plasma Diagnostics and Applications
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2014 journal article

AlGaN/GaN field effect transistors functionalized with recognition peptides

Applied Physics Letters, 105(13), 134103.

By: N. Rohrbaugh n, I. Bryan n, Z. Bryan n, C. Arellano n, R. Collazo n & A. Ivanisevic n

topics (OpenAlex): Analytical Chemistry and Sensors; GaN-based semiconductor devices and materials; Advanced biosensing and bioanalysis techniques
TL;DR: The recognition sequence, SVSVGMKPSPRP, was compared to other biomolecules and subsequently the device stability was examined, indicating a weak interaction between adsorbate and the semiconductor surfaces. (via Semantic Scholar)
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Crossref
Added: February 24, 2020

2014 journal article

AlGaN/GaN field effect transistors functionalized with recognition peptides

Applied Physics Letters, 105(13).

Source: NC State University Libraries
Added: August 6, 2018

2014 journal article

Direct Observation of the Polarity Control Mechanism in Aluminum Nitride Grown on Sapphire by Aberration Corrected Scanning Transmission Electron Microscopy

Microscopy and Microanalysis, 20(S3), 162–163.

By: L. Hussey n, I. Bryan n, R. Kirste n, W. Guo n, Z. Bryan n, S. Mita*, R. Collazo n, Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Optical Coatings and Gratings; Semiconductor materials and interfaces
Sources: Crossref, NC State University Libraries
Added: February 24, 2020

2014 article

Effects of Environmental Exposure on Stability and Conductance Poly-l-lysine Coated AlGaN/GaN High Electron Mobility Transistors

WIDE BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 15, Vol. 61, pp. 147–151.

By: N. Rohrbaugh n, I. Bryan n, Z. Bryan n, R. Collazo n & A. Ivanisevic n

topics (OpenAlex): GaN-based semiconductor devices and materials; Molecular Junctions and Nanostructures; Advanced biosensing and bioanalysis techniques
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2014 journal article

Exciton transitions and oxygen as a donor in m-plane AlN homoepitaxial films

JOURNAL OF APPLIED PHYSICS, 115(13).

By: Z. Bryan n, I. Bryan n, M. Bobea n, L. Hussey n, R. Kirste n, Z. Sitar n, R. Collazo n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Acoustic Wave Resonator Technologies
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2014 journal article

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

APPLIED PHYSICS LETTERS, 105(22).

By: Z. Bryan n, I. Bryan n, B. Gaddy n, P. Reddy n, L. Hussey n, M. Bobea n, W. Guo n, M. Hoffmann n ...

Contributors: Z. Bryan n, I. Bryan n, B. Gaddy n, P. Reddy n, L. Hussey n, M. Bobea n, W. Guo n, M. Hoffmann n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
Sources: Web Of Science, NC State University Libraries, ORCID
Added: August 6, 2018

2014 journal article

HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties

JOURNAL OF CRYSTAL GROWTH, 394, 55–60.

By: T. Sochacki*, Z. Bryan n, M. Amilusik*, M. Bobea n, M. Fijalkowski*, I. Bryan n, B. Lucznik*, R. Collazo n ...

author keywords: Characterization; Hydride vapor phase epitaxy; GaN; Nitrides; Semiconducting III-V materials
topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2014 journal article

Homoepitaxial AlN thin films deposited on m-plane (1(1)over-bar00) AlN substrates by metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 116(13).

By: I. Bryan n, Z. Bryan n, M. Bobea n, L. Hussey n, R. Kirste n, R. Collazo n, Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; Acoustic Wave Resonator Technologies
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2014 journal article

Phonon pressure coefficients and deformation potentials of wurtzite AlN determined by uniaxial pressure-dependent Raman measurements

PHYSICAL REVIEW B, 90(20).

By: G. Callsen*, M. Wagner*, J. Reparaz*, F. Nippert*, T. Kure*, S. Kalinowski*, A. Hoffmann*, M. Ford* ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Acoustic Wave Resonator Technologies; Thermal properties of materials
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2014 journal article

Polarity characterization by anomalous x-ray dispersion of ZnO films and GaN lateral polar structures

JOURNAL OF APPLIED PHYSICS, 115(4).

By: C. Shelton n, E. Sachet n, E. Paisley n, M. Hoffmann n, J. Rajan n, R. Collazo n, Z. Sitar n, J. Maria n

topics (OpenAlex): ZnO doping and properties; GaN-based semiconductor devices and materials; Acoustic Wave Resonator Technologies
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
10. Reduced Inequalities (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2014 article

Properties of AlN based lateral polarity structures

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 2, Vol. 11, pp. 261–264.

By: R. Kirste n, S. Mita*, M. Hoffmann n, L. Hussey n, W. Guo n, I. Bryan n, Z. Bryan n, J. Tweedie n ...

author keywords: lateral polarity structures; quasi-phase matching; N-polar; columnar growth
topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; Acoustic Wave Resonator Technologies
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2014 journal article

Sapphire decomposition and inversion domains in N-polar aluminum nitride

APPLIED PHYSICS LETTERS, 104(3).

By: L. Hussey n, R. White n, R. Kirste n, S. Mita*, I. Bryan n, W. Guo n, K. Osterman n, B. Haidet n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Acoustic Wave Resonator Technologies; Metal and Thin Film Mechanics
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2014 journal article

Schottky contact formation on polar and non-polar AlN

JOURNAL OF APPLIED PHYSICS, 116(19).

By: P. Reddy n, I. Bryan n, Z. Bryan n, J. Tweedie n, R. Kirste n, R. Collazo n, Z. Sitar n

Contributors: P. Reddy n, I. Bryan n, Z. Bryan n, J. Tweedie n, R. Kirste n, R. Collazo n, Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and interfaces; Metal and Thin Film Mechanics
Sources: Web Of Science, NC State University Libraries, ORCID
Added: August 6, 2018

2014 journal article

Smooth cubic commensurate oxides on gallium nitride

JOURNAL OF APPLIED PHYSICS, 115(6).

By: E. Paisley n, B. Gaddy n, J. LeBeau n, C. Shelton n, M. Biegalski*, H. Christen*, M. Losego n, S. Mita n ...

topics (OpenAlex): Semiconductor materials and devices; ZnO doping and properties; GaN-based semiconductor devices and materials
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2014 journal article

Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

JOURNAL OF APPLIED PHYSICS, 115(10).

By: W. Guo n, Z. Bryan n, J. Xie*, R. Kirste n, S. Mita*, I. Bryan n, L. Hussey n, M. Bobea n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Semiconductor Quantum Structures and Devices
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2014 article

Surface preparation of non-polar single-crystalline AlN substrates

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, Vol. 11, pp. 454–457.

By: I. Bryan n, C. Akouala n, J. Tweedie n, Z. Bryan n, A. Rice n, R. Kirste n, R. Collazo n, Z. Sitar n

author keywords: aluminum nitride; aluminum hydroxides; X-ray photoelectron spectroscopy; surface preparation
topics (OpenAlex): Metal and Thin Film Mechanics; Semiconductor materials and devices; GaN-based semiconductor devices and materials
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2014 journal article

Surface topography and chemistry shape cellular behavior on wide band-gap semiconductors

Acta Biomaterialia, 10(6), 2455–2462.

By: L. Bain n, R. Collazo n, S. Hsu*, N. Latham, M. Manfra* & A. Ivanisevic n

author keywords: Gallium nitride; Rat pheochromocytoma (PC12) cells; Surface topography; Surface chemistry; Cell differentiation
MeSH headings : Animals; Cell Adhesion; Microscopy, Electron, Scanning; PC12 Cells; Rats; Semiconductors; Surface Properties
topics (OpenAlex): Neuroscience and Neural Engineering; Advanced Sensor and Energy Harvesting Materials; GaN-based semiconductor devices and materials
TL;DR: The dependence of cell behavior on both the topographic morphology and surface chemistry is demonstrated, providing further evidence for the importance of surface modification for modulating bio-inorganic interfaces. (via Semantic Scholar)
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
Sources: Crossref, NC State University Libraries, Web Of Science
Added: August 6, 2018

2014 journal article

The effect of polarity and surface states on the Fermi level at III-nitride surfaces

JOURNAL OF APPLIED PHYSICS, 116(12).

By: P. Reddy n, I. Bryan n, Z. Bryan n, W. Guo n, L. Hussey n, R. Collazo n, Z. Sitar n

Contributors: P. Reddy n, I. Bryan n, Z. Bryan n, W. Guo n, L. Hussey n, R. Collazo n, Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Photocathodes and Microchannel Plates
Sources: Web Of Science, NC State University Libraries, ORCID
Added: August 6, 2018

2014 journal article

The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

APPLIED PHYSICS LETTERS, 104(20).

By: B. Gaddy n, Z. Bryan n, I. Bryan n, J. Xie n, R. Dalmau n, B. Moody n, Y. Kumagai n, T. Nagashima n ...

topics (OpenAlex): Ga2O3 and related materials; GaN-based semiconductor devices and materials; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2014 journal article

Vacancy defects in UV-transparent HVPE-AlN

Physica Status Solidi (c), 11(3-4), 405–407.

By: T. Kuittinen*, F. Tuomisto*, Y. Kumagai*, T. Nagashima*, T. Kinoshita*, A. Koukitu*, R. Collazo n, Z. Sitar n

author keywords: AlN; UV-transparency; vacancies; positron annihilation
topics (OpenAlex): Muon and positron interactions and applications; Advanced ceramic materials synthesis; GaN-based semiconductor devices and materials
Sources: Crossref, NC State University Libraries
Added: February 24, 2020

2013 journal article

Aqueous Stability of Ga- and N-Polar Gallium Nitride

LANGMUIR, 29(1), 216–220.

By: C. Foster n, R. Collazo n, Z. Sitar n & A. Ivanisevic n

MeSH headings : Drug Stability; Gallium / chemistry; Microscopy, Atomic Force; Photoelectron Spectroscopy; Semiconductors; Water / chemistry
topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
TL;DR: Gallium polar surfaces were found to exhibit superior stability to nitrogen polar surfaces in the solutions studied, and the need for further research on surface passivation and functionalization techniques for polar III-nitride semiconductors is highlighted. (via Semantic Scholar)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2013 journal article

Cell Behavior on Gallium Nitride Surfaces: Peptide Affinity Attachment versus Covalent Functionalization

LANGMUIR, 29(26), 8377–8384.

By: C. Foster n, R. Collazo n, Z. Sitar n & A. Ivanisevic n

MeSH headings : Amino Acid Sequence; Animals; Biocompatible Materials / chemistry; Biocompatible Materials / pharmacology; Cell Adhesion / drug effects; Cell Count; Gallium / chemistry; Gallium / pharmacology; Microscopy, Atomic Force; Molecular Sequence Data; Oligopeptides / chemistry; PC12 Cells; Photoelectron Spectroscopy; Rats; Surface Properties
topics (OpenAlex): Advanced biosensing and bioanalysis techniques; GaN-based semiconductor devices and materials; Molecular Junctions and Nanostructures
TL;DR: The results suggest that the covalent and affinity driven attachment methods are both suitable for promoting PC12 cell adhesion to the gallium nitride surface, though each method may be preferentially suited for distinct applications. (via Semantic Scholar)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2013 journal article

Comparative study of etching high crystalline quality AlN and GaN

JOURNAL OF CRYSTAL GROWTH, 366, 20–25.

By: W. Guo n, J. Xie*, C. Akouala n, S. Mita*, A. Rice n, J. Tweedie n, I. Bryan n, R. Collazo n, Z. Sitar n

author keywords: Etching; Surfaces; Nitrides; Semiconducting III-V materials; Light emitting diodes
topics (OpenAlex): GaN-based semiconductor devices and materials; ZnO doping and properties; Ga2O3 and related materials
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2013 journal article

Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements

Journal of Applied Physics, 113(10), 103504.

By: R. Kirste n, M. Hoffmann n, J. Tweedie n, Z. Bryan n, G. Callsen*, T. Kure*, C. Nenstiel*, M. Wagner* ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Semiconductor materials and devices
Sources: Web Of Science, NC State University Libraries, Crossref
Added: August 6, 2018

2013 journal article

Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions

Applied Physics Letters, 103(12).

By: B. Neuschl*, K. Thonke*, M. Feneberg*, R. Goldhahn*, T. Wunderer*, Z. Yang*, N. Johnson*, J. Xie* ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Acoustic Wave Resonator Technologies; Semiconductor materials and devices
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: NC State University Libraries, NC State University Libraries
Added: August 6, 2018

2013 journal article

Epitaxial PbxZr1-xTiO3 on GaN

JOURNAL OF APPLIED PHYSICS, 113(7).

By: E. Paisley n, H. Craft n, M. Losego n, H. Lu*, A. Gruverman*, R. Collazo n, Z. Sitar n, J. Maria n

topics (OpenAlex): Ferroelectric and Piezoelectric Materials; Acoustic Wave Resonator Technologies; Multiferroics and related materials
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2013 article

Epitaxial lead zirconate titanate on gallium nitride (vol 113, 074107, 2013)

Journal of Applied Physics, Vol. 114.

By: E. Paisley, H. Craft, M. Losego, H. Lu, A. Gruverman, R. Collazo, Z. Sitar, J. Maria

Source: NC State University Libraries
Added: August 6, 2018

2013 journal article

Erratum: “Kinase detection with gallium nitride based high electron mobility transistors” [Appl. Phys. Lett. 103, 013701 (2013)]

Applied Physics Letters, 103(8), 089902.

By: M. Makowski*, I. Bryan n, Z. Sitar n, C. Arellano n, J. Xie*, R. Collazo n, A. Ivanisevic n

topics (OpenAlex): Analytical Chemistry and Sensors; Electrochemical sensors and biosensors; Gas Sensing Nanomaterials and Sensors
TL;DR: This article corrects the article on p. 013701 in vol. (via Semantic Scholar)
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Crossref, NC State University Libraries, Web Of Science
Added: August 6, 2018

2013 journal article

Excitonic emission dynamics in homoepitaxial AlN films studied using polarized and spatio-time-resolved cathodoluminescence measurements

APPLIED PHYSICS LETTERS, 103(14).

By: S. Chichibu n, K. Hazu n, Y. Ishikawa n, M. Tashiro n, T. Ohtomo n, K. Furusawa n, A. Uedono n, S. Mita n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Acoustic Wave Resonator Technologies; ZnO doping and properties
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2013 journal article

Fermi Level Control of Point Defects During Growth of Mg-Doped GaN

JOURNAL OF ELECTRONIC MATERIALS, 42(5), 815–819.

By: Z. Bryan n, M. Hoffmann n, J. Tweedie n, R. Kirste n, G. Callsen*, I. Bryan n, A. Rice n, M. Bobea n ...

author keywords: Mg; GaN; UV excitation; Photoluminescence; Metal-organic chemical vapordeposition (MOCVD)
topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2013 journal article

Ge doped GaN with controllable high carrier concentration for plasmonic applications

Applied Physics Letters, 103(24), 242107.

By: R. Kirste n, M. Hoffmann n, E. Sachet n, M. Bobea n, Z. Bryan n, I. Bryan n, C. Nenstiel*, A. Hoffmann* ...

topics (OpenAlex): GaN-based semiconductor devices and materials; ZnO doping and properties; Ga2O3 and related materials
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Crossref, NC State University Libraries, NC State University Libraries
Added: August 6, 2018

2013 journal article

Kinase detection with gallium nitride based high electron mobility transistors

Applied Physics Letters, 103(1), 013701.

By: M. Makowski*, I. Bryan n, Z. Sitar n, C. Arellano n, J. Xie*, R. Collazo n, A. Ivanisevic n

topics (OpenAlex): Analytical Chemistry and Sensors; Electrochemical sensors and biosensors; Advanced biosensing and bioanalysis techniques
TL;DR: A label-free kinase detection system fabricated by the adsorption of gold nanoparticles functionalized with kinase inhibitor onto HEMTs electrically detected 1 pM SRC kinase in ionic solutions. (via Semantic Scholar)
Sources: Crossref, NC State University Libraries, NC State University Libraries
Added: August 6, 2018

2013 journal article

Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures

APPLIED PHYSICS LETTERS, 102(17).

By: J. Xie*, S. Mita*, Z. Bryan n, W. Guo n, L. Hussey n, B. Moody*, R. Schlesser*, R. Kirste n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Acoustic Wave Resonator Technologies
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2013 journal article

Physisorption of functionalized gold nanoparticles on AlGaN/GaN high electron mobility transistors for sensing applications

Applied Physics Letters, 102(7), 074102.

By: M. Makowski*, S. Kim*, M. Gaillard*, D. Janes*, M. Manfra*, I. Bryan n, Z. Sitar n, C. Arellano n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Nanowire Synthesis and Applications; ZnO doping and properties
TL;DR: The Au NP/HEMT system electrically detected functional group differences on adsorbed NPs which is pertinent to biosensor applications. (via Semantic Scholar)
Sources: Crossref, NC State University Libraries
Added: February 24, 2020

2013 journal article

Polarity control and growth of lateral polarity structures in AlN

Applied Physics Letters, 102(18).

By: R. Kirste n, S. Mita, L. Hussey n, M. Hoffmann n, W. Guo n, I. Bryan n, Z. Bryan n, J. Tweedie n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Acoustic Wave Resonator Technologies; Ga2O3 and related materials
Sources: NC State University Libraries, NC State University Libraries
Added: August 6, 2018

2013 journal article

Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds

APPLIED PHYSICS EXPRESS, 6(7).

topics (OpenAlex): GaN-based semiconductor devices and materials; ZnO doping and properties; Ga2O3 and related materials
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2013 journal article

Publisher's Note: “Epitaxial lead zirconate titanate on gallium nitride” [J. Appl. Phys. 113, 074107 (2013)]

Journal of Applied Physics, 114(23), 239901.

By: E. Paisley n, H. Craft n, M. Losego n, H. Lu*, A. Gruverman*, R. Collazo n, Z. Sitar n, J. Maria n

topics (OpenAlex): Perovskite Materials and Applications; Advanced Photocatalysis Techniques
Sources: Crossref, NC State University Libraries
Added: August 28, 2020

2013 journal article

Refractive index of III-metal-polar and N-polar AlGaN waveguides grown by metal organic chemical vapor deposition

APPLIED PHYSICS LETTERS, 102(22).

By: M. Rigler*, M. Zgonik*, M. Hoffmann n, R. Kirste n, M. Bobea n, R. Collazo n, Z. Sitar n, S. Mita*, M. Gerhold*

topics (OpenAlex): GaN-based semiconductor devices and materials; Photonic and Optical Devices; Photorefractive and Nonlinear Optics
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2013 journal article

Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition

APPLIED PHYSICS LETTERS, 102(6).

By: I. Bryan n, A. Rice n, L. Hussey n, Z. Bryan n, M. Bobea n, S. Mita*, J. Xie*, R. Kirste n, R. Collazo n, Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Acoustic Wave Resonator Technologies; Metal and Thin Film Mechanics
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2013 journal article

Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

APPLIED PHYSICS LETTERS, 103(16).

By: B. Gaddy n, Z. Bryan n, I. Bryan n, R. Kirste n, J. Xie*, R. Dalmau*, B. Moody*, Y. Kumagai* ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Semiconductor materials and devices
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2013 journal article

X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN

JOURNAL OF APPLIED PHYSICS, 113(12).

By: M. Bobea n, J. Tweedie n, I. Bryan n, Z. Bryan n, A. Rice n, R. Dalmau*, J. Xie*, R. Collazo n, Z. Sitar n

topics (OpenAlex): Metal and Thin Film Mechanics; GaN-based semiconductor devices and materials; Semiconductor materials and devices
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2012 journal article

Gold Nanoparticles: Weakly Charged Cationic Nanoparticles Induce DNA Bending and Strand Separation (Adv. Mater. 31/2012)

Advanced Materials, 24(31), 4221–4221.

By: J. Railsback n, A. Singh n, R. Pearce n, T. McKnight*, R. Collazo n, Z. Sitar n, Y. Yingling n, A. Melechko n

topics (OpenAlex): Advanced biosensing and bioanalysis techniques; RNA Interference and Gene Delivery; Dendrimers and Hyperbranched Polymers
Sources: Crossref, NC State University Libraries, ORCID
Added: January 6, 2020

2012 journal article

Lateral epitaxial overgrowth of nitrogen polar GaN on smooth nitrogen polar GaN templates by metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 112(11).

By: L. Hussey n, S. Mita*, J. Xie*, W. Guo n, C. Akouala n, J. Rajan n, I. Bryan n, R. Collazo n, Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2012 journal article

On the origin of the 265 nm absorption band in AlN bulk crystals

APPLIED PHYSICS LETTERS, 100(19).

By: R. Collazo n, J. Xie*, B. Gaddy n, Z. Bryan n, R. Kirste n, M. Hoffmann n, R. Dalmau*, B. Moody* ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2012 journal article

Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 249(3), 511–515.

By: B. Neuschl*, K. Thonke*, M. Feneberg*, S. Mita*, J. Xie*, R. Dalmau*, R. Collazo n, Z. Sitar n

author keywords: AlN; donor; exciton; homoepitaxy; photoluminescence; silicon
topics (OpenAlex): GaN-based semiconductor devices and materials; Acoustic Wave Resonator Technologies; Semiconductor materials and devices
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2012 journal article

Optical signature of Mg-doped GaN: Transfer processes

PHYSICAL REVIEW B, 86(7).

By: G. Callsen*, M. Wagner*, T. Kure*, J. Reparaz*, M. Buegler, J. Brunnmeier*, C. Nenstiel*, A. Hoffmann* ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2012 article

Schottky barrier and interface chemistry for Ni contacted to Al0.8Ga0.2N grown on c-oriented AlN single crystal substrates

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, Vol. 9, pp. 584–587.

By: J. Tweedie n, R. Collazo n, A. Rice n, S. Mita, J. Xie, R. Akouala n, Z. Sitar n

author keywords: Schottky barrier; AlN; AlGaN; XPS
topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2012 journal article

Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport

APPLIED PHYSICS EXPRESS, 5(12).

By: T. Nagashima*, Y. Kubota*, T. Kinoshita*, Y. Kumagai*, J. Xie*, R. Collazo n, H. Murakami*, H. Okamoto*, A. Koukitu*, Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2012 journal article

Surfactant assisted growth of MgO films on GaN

APPLIED PHYSICS LETTERS, 101(9).

By: E. Paisley n, T. Shelton n, S. Mita*, R. Collazo n, H. Christen*, Z. Sitar n, M. Biegalski*, J. Maria n

topics (OpenAlex): Semiconductor materials and devices; GaN-based semiconductor devices and materials; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2012 journal article

Weakly Charged Cationic Nanoparticles Induce DNA Bending and Strand Separation

ADVANCED MATERIALS, 24(31), 4261-+.

By: J. Railsback n, A. Singh n, R. Pearce n, T. McKnight*, R. Collazo n, Z. Sitar n, Y. Yingling n, A. Melechko n

Contributors: J. Railsback n, A. Singh n, R. Pearce n, T. McKnight*, R. Collazo n, Z. Sitar n, Y. Yingling n, A. Melechko n

author keywords: gold nanoparticles; DNA compaction; DNA denaturing; cationic ligands; DNA-nanoparticle interactions
MeSH headings : Cations / chemistry; DNA / chemistry; Gold / chemistry; Molecular Dynamics Simulation; Nanoparticles / chemistry; Nucleic Acid Conformation; Nucleic Acid Denaturation; Spectrophotometry, Ultraviolet
topics (OpenAlex): DNA and Nucleic Acid Chemistry; Advanced biosensing and bioanalysis techniques; RNA Interference and Gene Delivery
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
Sources: Web Of Science, NC State University Libraries, ORCID
Added: August 6, 2018

2011 conference paper

265 nm light emitting diodes on AlN single crystal substrates: Growth and characterization

2011 Conference on Lasers and Electro-Optics (CLEO).

By: R. Collazo n, S. Mita*, J. Xie*, A. Rice n, J. Tweedie n, R. Dalmau*, B. Moody*, R. Schlesser* ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Acoustic Wave Resonator Technologies; Ga2O3 and related materials
Sources: NC State University Libraries, NC State University Libraries
Added: August 6, 2018

2011 journal article

Characterization of dislocation arrays in AlN single crystals grown by PVT

Physica Status Solidi (a), 208(7), 1545–1547.

By: R. Dalmau*, B. Moody*, J. Xie*, R. Collazo n & Z. Sitar n

author keywords: aluminum nitride; dislocations; etch pits; growth from vapor; low angle grain boundaries; single crystals
topics (OpenAlex): GaN-based semiconductor devices and materials; Acoustic Wave Resonator Technologies; Metal and Thin Film Mechanics
Sources: Web Of Science, NC State University Libraries, Crossref
Added: August 6, 2018

2011 journal article

Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 158(5), H530–H535.

By: R. Dalmau*, B. Moody*, R. Schlesser*, S. Mita*, J. Xie*, M. Feneberg*, B. Neuschl*, K. Thonke* ...

topics (OpenAlex): GaN-based semiconductor devices and materials; ZnO doping and properties; Ga2O3 and related materials
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2011 journal article

Growth temperature and growth rate dependency on reactor pressure for InN epilayers grown by HPCVD

Physica Status Solidi (c), 8(7-8), 2059–2062.

By: M. Buegler*, S. Gamage*, R. Atalay*, J. Wang*, M. Senevirathna*, R. Kirste*, T. Xu*, M. Jamil* ...

author keywords: InN; HPCVD; high-pressure; InN; epitaxy; growth temperature; growth rate
topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor Quantum Structures and Devices; Semiconductor materials and devices
Sources: Crossref, NC State University Libraries
Added: February 24, 2020

2011 journal article

Impact of gallium supersaturation on the growth of N-polar GaN

Physica Status Solidi (c), 8(7-8), 2078–2080.

By: S. Mita*, R. Collazo n, A. Rice n, J. Tweedie n, J. Xie*, R. Dalmau*, Z. Sitar n

author keywords: metalorganic chemical vapor deposition; nitrides; semiconducting III-V materials
topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Metal and Thin Film Mechanics
Sources: Crossref, NC State University Libraries
Added: February 24, 2020

2011 journal article

Ni/Au Schottky diodes on AlxGa1-xN (0.7<x<1) grown on AlN single crystal substrates

Physica Status Solidi (c), 8(7-8), 2407–2409.

By: J. Xie*, S. Mia*, R. Dalmau*, R. Collazo n, A. Rice n, J. Tweedie n, Z. Sitar n

author keywords: Schottky diode; AlN; AlGaN; GaN
topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Metal and Thin Film Mechanics
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Crossref, NC State University Libraries
Added: February 24, 2020

2011 journal article

Observation of NH2 species on tilted InN (01(1)over-bar1) facets

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 29(4).

By: A. Acharya*, M. Buegler*, R. Atalay*, N. Dietz*, B. Thoms*, J. Tweedie n, R. Collazo n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2011 journal article

On the strain in n-type GaN

APPLIED PHYSICS LETTERS, 99(14).

By: J. Xie*, S. Mita*, L. Hussey n, A. Rice n, J. Tweedie n, J. LeBeau n, R. Collazo n, Z. Sitar n

author keywords: dislocation climb; elemental semiconductors; Fermi level; gallium compounds; germanium; III-V semiconductors; MOCVD; semiconductor doping; semiconductor epitaxial layers; tensile strength; transmission electron microscopy; vacancies (crystal); vapour phase epitaxial growth; wide band gap semiconductors; X-ray diffraction
topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Semiconductor Quantum Structures and Devices
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2011 article

Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, Vol. 8.

By: R. Collazo n, S. Mita*, J. Xie*, A. Rice n, J. Tweedie n, R. Dalmau*, Z. Sitar n, C. Wetzel, A. Khan

author keywords: aluminium nitride; aluminium gallium nitride; n-type doping; UV light emitting diodes
topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Metal and Thin Film Mechanics
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2011 journal article

Sharp bound and free exciton lines from homoepitaxial AlN

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 208(7), 1520–1522.

author keywords: aluminum nitride; donors; excitons; photoluminescence
topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2011 journal article

Spectroscopic measurements of the surface stoichiometry of chemical vapor deposited GaN

APPLIED PHYSICS LETTERS, 98(8).

By: H. Craft n, A. Rice n, R. Collazo n, Z. Sitar n & J. Maria n

topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; Semiconductor materials and devices
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2011 journal article

Strain in Si doped GaN and the Fermi level effect

APPLIED PHYSICS LETTERS, 98(20).

By: J. Xie*, S. Mita*, A. Rice n, J. Tweedie n, L. Hussey n, R. Collazo n, Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; ZnO doping and properties; Semiconductor Quantum Structures and Devices
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2011 journal article

Surfactant-enabled epitaxy through control of growth mode with chemical boundary conditions

NATURE COMMUNICATIONS, 2.

By: E. Paisley n, M. Losego n, B. Gaddy n, J. Tweedie n, R. Collazo n, Z. Sitar n, D. Irving n, J. Maria n

topics (OpenAlex): Electronic and Structural Properties of Oxides; Semiconductor materials and devices; ZnO doping and properties
TL;DR: This work presents a general synthesis methodology, involving systematic control of the chemical boundary conditions in situ, by which the crystal habit, and thus growth mode, can be actively engineered, and establishes the capability for layer-by-layer deposition in systems that otherwise default to island formation and grainy morphology. (via Semantic Scholar)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2011 journal article

Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN

Journal of Applied Physics, 110(9), 093503.

By: R. Kirste*, R. Collazo n, G. Callsen*, M. Wagner*, T. Kure*, J. Sebastian Reparaz, S. Mita*, J. Xie* ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries, Crossref
Added: August 6, 2018

2010 journal article

Critical examination of growth rate for magnesium oxide (MgO) thin films deposited by molecular beam epitaxy with a molecular oxygen flux

JOURNAL OF MATERIALS RESEARCH, 25(4), 670–679.

By: M. Losego n, H. Craft n, E. Paisley n, S. Mita n, R. Collazo n, Z. Sitar n, J. Maria n

topics (OpenAlex): Semiconductor materials and devices; Electronic and Structural Properties of Oxides; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2010 article

Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity

Collazo, R., Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., & Sitar, Z. (2010, January). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 207, pp. 45–48.

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2010 article

Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1-xN (0 <= x <= 1) deposition by LP OMVPE

Rice, A., Collazo, R., Tweedie, J., Xie, J., Mita, S., & Sitar, Z. (2010, April 1). JOURNAL OF CRYSTAL GROWTH, Vol. 312, pp. 1321–1324.

By: A. Rice n, R. Collazo n, J. Tweedie n, J. Xie*, S. Mita* & Z. Sitar n

author keywords: Low-pressure metalorganic vapor phase epitaxy; Organometallic vapor phase epitaxy; Nitrides; Semiconducting III-V materials; Semiconducting ternary compounds
topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Metal and Thin Film Mechanics
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2010 journal article

Optical properties of InN grown on templates with controlled surface polarities

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 207(10), 2351–2354.

author keywords: InN; optical properties; photoluminescence; surface polarity
topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2010 journal article

Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition

Journal of Applied Physics, 108(4), 043510.

topics (OpenAlex): Metal and Thin Film Mechanics; GaN-based semiconductor devices and materials; Semiconductor materials and devices
Sources: Crossref, NC State University Libraries, Web Of Science
Added: August 6, 2018

2010 journal article

The effect of N-polar GaN domains as Ohmic contacts

APPLIED PHYSICS LETTERS, 97(12).

By: J. Xie*, S. Mita*, R. Collazo n, A. Rice n, J. Tweedie n & Z. Sitar n

author keywords: adsorption; contact resistance; elemental semiconductors; gallium compounds; Hall effect; III-V semiconductors; MOCVD; ohmic contacts; secondary ion mass spectra; semiconductor doping; silicon; wide band gap semiconductors
topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2010 journal article

X-ray characterization of composition and relaxation of Al(x)Ga(1-x)N(0 <= x <= 1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy

JOURNAL OF APPLIED PHYSICS, 108(4).

topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; Acoustic Wave Resonator Technologies
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2009 journal article

Epitaxial Ba0.5Sr0.5TiO3–GaN heterostructures with abrupt interfaces

Journal of Crystal Growth, 311(4), 1106–1109.

By: M. Losego n, L. Fitting Kourkoutis, S. Mita n, H. Craft n, D. Muller*, R. Collazo n, Z. Sitar n, J. Maria n

author keywords: Physical vapor deposition processes; Nitrides; Perovskites; Ferroelectric materials
topics (OpenAlex): Ferroelectric and Piezoelectric Materials; ZnO doping and properties; Acoustic Wave Resonator Technologies
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
Sources: Crossref, NC State University Libraries, Web Of Science
Added: August 6, 2018

2009 article

Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition

Mita, S., Collazo, R., & Sitar, Z. (2009, May 1). JOURNAL OF CRYSTAL GROWTH, Vol. 311, pp. 3044–3048.

By: S. Mita n, R. Collazo n & Z. Sitar n

author keywords: Crystal structure; Chemical vapor deposition process; Metalorganic chemical vapor deposition; Nitrides; Semiconducting III-V materials
topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2009 journal article

Seeded growth of AlN bulk crystals in m- and c-orientation

JOURNAL OF CRYSTAL GROWTH, 312(1), 58–63.

author keywords: High resolution X-ray diffraction; Substrates; X-ray topography; Growth from vapor; Seeded vapor growth; Nitrides
topics (OpenAlex): GaN-based semiconductor devices and materials; Acoustic Wave Resonator Technologies; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2008 journal article

Defect chemistry of nano-grained barium titanate films

JOURNAL OF MATERIALS SCIENCE, 43(1), 38–42.

By: J. Ihlefeld n, M. Losego n, R. Collazo n, W. Borland* & J. Maria n

topics (OpenAlex): Ferroelectric and Piezoelectric Materials; Electronic and Structural Properties of Oxides; Microwave Dielectric Ceramics Synthesis
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2008 journal article

Different optical absorption edges in AlN bulk crystals grown in m- and c-orientations

APPLIED PHYSICS LETTERS, 93(13).

By: P. Lu n, R. Collazo n, R. Dalmau*, G. Durkaya*, N. Dietz* & Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Acoustic Wave Resonator Technologies
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
1. No Poverty (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2008 journal article

Direct Observation of Inversion Domain Boundaries of GaN onc-Sapphire at Sub-ångstrom Resolution

Advanced Materials, 20(11), 2162–2165.

By: F. Liu n, R. Collazo n, S. Mita n, Z. Sitar n, S. Pennycook* & G. Duscher*

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Crossref, NC State University Libraries, Web Of Science
Added: August 6, 2018

2008 journal article

Epitaxial growth of the metastable phase ytterbium monoxide on gallium nitride surfaces

JOURNAL OF CRYSTAL GROWTH, 310(1), 51–56.

By: M. Losego n, S. Mita n, R. Collazo n, Z. Sitar n & J. Maria n

author keywords: phase equilibria; molecular beam epitaxy; metastable compounds; oxides; rare earth compounds; ytterbium monoxide
topics (OpenAlex): Semiconductor materials and devices; Electronic and Structural Properties of Oxides; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2008 journal article

Fabrication of a GaN p/n lateral polarity junction by polar doping selectivity

Physica Status Solidi (c), 5(6), 1977–1979.

By: R. Collazo n, S. Mita n, A. Rice n, R. Dalmau n, P. Wellenius n, J. Muth n, Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; ZnO doping and properties; Ga2O3 and related materials
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Crossref, NC State University Libraries
Added: February 24, 2020

2008 journal article

Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 104(1).

By: S. Mita n, R. Collazo n, A. Rice n, R. Dalmau n & Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2008 journal article

Spectroscopic analysis of the epitaxial CaO (111)-GaN (0002) interface

APPLIED PHYSICS LETTERS, 92(8).

By: H. Craft n, R. Collazo n, M. Losego n, S. Mita n, Z. Sitar n & J. Maria n

topics (OpenAlex): GaN-based semiconductor devices and materials; ZnO doping and properties; Ga2O3 and related materials
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2008 journal article

Surface water reactivity of polycrystalline MgO and CaO films investigated using x-ray photoelectron spectroscopy

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 26(6), 1507–1510.

By: H. Craft n, R. Collazo n, M. Losego n, Z. Sitar n & J. Maria n

author keywords: annealing; calcium compounds; epitaxial layers; magnesium compounds; monolayers; surface chemistry; surface morphology; X-ray photoelectron spectra
topics (OpenAlex): ZnO doping and properties; Electronic and Structural Properties of Oxides; Magnesium Oxide Properties and Applications
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2008 journal article

The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition

APPLIED PHYSICS LETTERS, 92(4).

By: N. Dietz*, M. Alevli*, R. Atalay*, G. Durkaya*, R. Collazo n, J. Tweedie n, S. Mita n, Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor Quantum Structures and Devices; Ga2O3 and related materials
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2008 journal article

Three-dimensional geometry of nanometer-scale AlN pits: A new template for quantum dots?

Advanced Materials, 20(1), 134-.

By: F. Liu n, R. Collazo n, S. Mita n, Z. Sitar n & G. Duscher n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: NC State University Libraries, NC State University Libraries
Added: August 6, 2018

2007 journal article

Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy

JOURNAL OF APPLIED PHYSICS, 102(7).

By: H. Craft n, R. Collazo n, M. Losego n, S. Mita n, Z. Sitar n & J. Maria n

topics (OpenAlex): Semiconductor materials and devices; Ga2O3 and related materials; GaN-based semiconductor devices and materials
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2007 article

Epitaxial calcium oxide films deposited on gallium nitride surfaces

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 25, pp. 1029–1032.

By: M. Losego n, S. Mita n, R. Collazo n, Z. Sitar n & J. Maria n

topics (OpenAlex): Semiconductor materials and devices; GaN-based semiconductor devices and materials; Ga2O3 and related materials
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2007 journal article

Growth of highly resistive Ga-polar GaN by LP-MOVPE

Physica Status Solidi (c), 4(7), 2260–2263.

By: S. Mita n, R. Collazo n, R. Dalmau n & Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Crossref, NC State University Libraries
Added: February 24, 2020

2007 journal article

Impact of polarity control and related defects on the electrical properties of GaN grown by MOVPE

Physica Status Solidi (c), 4(7), 2597–2600.

By: R. Collazo n, S. Mita n, R. Dalmau n & Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Crossref, NC State University Libraries
Added: February 24, 2020

2007 journal article

Simultaneous growth of a GaN p/n lateral polarity junction by polar selective doping

APPLIED PHYSICS LETTERS, 91(21).

By: R. Collazo n, S. Mita n, A. Rice n, R. Dalmau n & Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2007 journal article

The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence

APPLIED PHYSICS LETTERS, 91(20).

By: F. Liu n, R. Collazo n, S. Mita n, Z. Sitar n, G. Duscher n & S. Pennycook*

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2007 journal article

X-ray photoelectron spectroscopy characterization of aluminum nitride surface oxides: Thermal and hydrothermal evolution

Journal of Electronic Materials, 36(4), 414–419.

By: R. Dalmau n, R. Collazo n, S. Mita n & Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Metal and Thin Film Mechanics
Sources: NC State University Libraries, NC State University Libraries
Added: August 6, 2018

2006 journal article

Comparative study of textured diamond films by thermal conductivity measurements

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 85(3), 331–335.

By: N. Govindaraju n, A. Aleksov n, X. Li n, F. Okuzumi n, S. Wolter n, R. Collazo n, J. Prater, Z. Sitar n

topics (OpenAlex): Diamond and Carbon-based Materials Research; Advanced Surface Polishing Techniques; Metal and Thin Film Mechanics
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2006 journal article

Current-voltage characteristics of n/n lateral polarity junctions in GaN

APPLIED PHYSICS LETTERS, 89(5).

By: A. Aleksov n, R. Collazo n, S. Mita n, R. Schlesser n & Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Semiconductor materials and devices
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2006 article

Growth of Ga- and N- polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers

Collazo, R., Mita, S., Aleksov, A., Schlesser, R., & Sitar, Z. (2006, January 25). JOURNAL OF CRYSTAL GROWTH, Vol. 287, pp. 586–590.

By: R. Collazo n, S. Mita n, A. Aleksov n, R. Schlesser n & Z. Sitar n

author keywords: crystal strcture; chemical vapor deposition process; metalorganic chemical vapor deposition; nitrides; semiconducting III-V materials
topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor Quantum Structures and Devices; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2006 article

Investigation of the effect of the total pressure and methane concentration on the growth rate and quality of diamond thin films grown by MPCVD

DIAMOND AND RELATED MATERIALS, Vol. 15, pp. 1784–1788.

By: X. Li n, J. Perkins n, R. Collazo n, R. Nemanich n & Z. Sitar n

author keywords: diamond growth; high growth rate; pressure dependence; methane concentration dependence
topics (OpenAlex): Diamond and Carbon-based Materials Research; Metal and Thin Film Mechanics; Ion-surface interactions and analysis
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2006 journal article

MgO epitaxy on GaN (0002) surfaces by molecular beam epitaxy

APPLIED PHYSICS LETTERS, 88(21).

By: H. Craft n, J. Ihlefeld n, M. Losego n, R. Collazo n, Z. Sitar n & J. Maria n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2006 article

Molecular beam epitaxy of Sm2O3, Dy2O3, and Ho2O3 on Si (111)

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 24, pp. 2105–2110.

By: H. Craft n, R. Collazo n, Z. Sitar n & J. Maria n

topics (OpenAlex): Semiconductor materials and devices; Electronic and Structural Properties of Oxides
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2006 journal article

Seeded growth of AlN on N- and Al-polar < 0 0 0 1 > AlN seeds by physical vapor transport

Seeded growth of AlN on N- and Al-polar < 0 0 0 1 > AlN seeds by physical vapor transport. JOURNAL OF CRYSTAL GROWTH, 286(2), 205–208.

By: Z. Herro n, D. Zhuang n, R. Schlesser n, R. Collazo n & Z. Sitar n

author keywords: crystal morphology; sublimation growth; aluminum nitride
topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Semiconductor materials and devices
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
15. Life on Land (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2005 article

Crucible materials for growth of aluminum nitride crystals

Schlesser, R., Dalmau, R., Zhuang, D., Collazo, R., & Sitar, Z. (2005, July 15). JOURNAL OF CRYSTAL GROWTH, Vol. 281, pp. 75–80.

By: R. Schlesser n, R. Dalmau n, D. Zhuang n, R. Collazo* & Z. Sitar n

author keywords: impurities; growth from vapor; nitrides
topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Acoustic Wave Resonator Technologies
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2005 journal article

Polarity control of GaN thin films grown by metalorganic vapor phase epitaxy

Physica Status Solidi (c), 2(7), 2117–2120.

By: R. Collazo n, S. Mita n, R. Schlesser n & Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Plasma Diagnostics and Applications; Ga2O3 and related materials
Sources: Crossref, NC State University Libraries
Added: February 24, 2020

2004 journal article

Model for the influence of boron impurities on the morphology of AIN grown by physical vapor transport

SURFACE SCIENCE, 560(1-3), L202–L206.

By: D. Brenner n, R. Schlesser n, Z. Sitar n, R. Dalmau n, R. Collazo n & Y. Li n

author keywords: nitrides; boron; growth; surface structure; morphology; roughness; and topography
topics (OpenAlex): Semiconductor materials and devices; Metal and Thin Film Mechanics; Advanced ceramic materials synthesis
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2003 journal article

Band-gap dependence of field emission from one-dimensional nanostructures grown on n-type and p-type silicon substrates

PHYSICAL REVIEW B, 68(12).

topics (OpenAlex): Graphene research and applications; Carbon Nanotubes in Composites; Nanowire Synthesis and Applications
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2003 journal article

Electron energy distribution during high-field transport in AlN

JOURNAL OF APPLIED PHYSICS, 93(5), 2765–2771.

By: R. Collazo n, R. Schlesser n, A. Roskowski n, P. Miraglia n, R. Davis n & Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Silicon Carbide Semiconductor Technologies
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2003 journal article

Thermal conductivity of epitaxially textured diamond films

DIAMOND AND RELATED MATERIALS, 12(1), 61–64.

By: S. Wolter n, D. Borca-Tasciuc*, G. Chen*, N. Govindaraju n, R. Collazo n, F. Okuzumi n, J. Prater*, Z. Sitar n

author keywords: epitaxial diamond; thermal conductivity; joule heating thermometry
topics (OpenAlex): Thermal properties of materials; Diamond and Carbon-based Materials Research; Adhesion, Friction, and Surface Interactions
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2002 journal article

Experimental observation of electron velocity overshoot in AlN

APPLIED PHYSICS LETTERS, 81(27), 5189–5191.

By: R. Collazo n, R. Schlesser n & Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Silicon Carbide Semiconductor Technologies; Semiconductor materials and devices
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2002 article

Role of adsorbates in field emission from nanotubes

DIAMOND AND RELATED MATERIALS, Vol. 11, pp. 769–773.

By: R. Collazo n, R. Schlesser n & Z. Sitar n

author keywords: field emission; nanotubes; adsorbates; energy distribution
topics (OpenAlex): Carbon Nanotubes in Composites; Graphene research and applications; Mechanical and Optical Resonators
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2002 journal article

Study of fusion bonding of diamond to silicon for silicon-on-diamond technology

APPLIED PHYSICS LETTERS, 81(17), 3275–3277.

By: G. Yushin n, S. Wolter n, A. Kvit n, R. Collazo n, B. Stoner n, J. Prater n, Z. Sitar n

topics (OpenAlex): Diamond and Carbon-based Materials Research; Semiconductor materials and devices; 3D IC and TSV technologies
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2001 journal article

Two field-emission states of single-walled carbon nanotubes

APPLIED PHYSICS LETTERS, 78(14), 2058–2060.

By: R. Collazo n, R. Schlesser n & Z. Sitar n

topics (OpenAlex): Carbon Nanotubes in Composites; Graphene research and applications; Nanotechnology research and applications
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2000 article

Energy distribution of field emitted electrons from carbon nanotubes

DIAMOND AND RELATED MATERIALS, Vol. 9, pp. 1201–1204.

By: R. Schlesser n, R. Collazo n, C. Bower*, O. Zhou* & Z. Sitar n

author keywords: field emission; nanotubes
topics (OpenAlex): Carbon Nanotubes in Composites; Graphene research and applications; Diamond and Carbon-based Materials Research
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2000 journal article

Hot electron transport in AlN

JOURNAL OF APPLIED PHYSICS, 88(10), 5865–5869.

By: R. Collazo n, R. Schlesser n, A. Roskowski n, R. Davis n & Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Plasma Diagnostics and Applications; Semiconductor materials and devices
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

conference paper

Fabrication and characterization of lateral polar GaN structures for second harmonic generation

Hoffmann, M. P., Gerhold, M., Kirste, R., Rice, A., Akouala, C. R., Xie, J. Q. Q., … Sitar, Z. Quantum sensing and nanophotonic devices x, 8631.

Source: NC State University Libraries
Added: August 6, 2018

journal article

Field emission from carbon nanotubes

Collazo, R., Schlesser, R., & Sitar, Z. New Diamond and Frontier Carbon Technology, 13(5), 297–306.

By: R. Collazo, R. Schlesser & Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

conference paper

Infrared nanoscopy of In-rich InGaN epilayers (Conference Presentation)

Seidlitz, D., Fali, A., Kankanamge, I. S. M., Alden, D., Collazo, R., Hoffmann, A., … Abate, Y. Fifteenth international conference on solid state lighting and led-based illumination systems, 9954.

By: D. Seidlitz, A. Fali, I. Kankanamge, D. Alden, R. Collazo, A. Hoffmann, N. Dietz, Y. Abate

Source: NC State University Libraries
Added: August 6, 2018

journal article

Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes

Guo, W., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., Collazo, R., & Sitar, Z. Journal of Applied Physics, 117(11).

By: W. Guo, R. Kirste, Z. Bryan, I. Bryan, M. Gerhold, R. Collazo, Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

conference paper

On the origin of the 4.7 eV absorption and 2.8 eV emission bands in bulk AlN substrates

Alden, D., Bryan, Z., Gaddy, B. E., Bryan, I., Callsen, G., Koukitu, A., … Collazo, R. Wide bandgap semiconductor materials and devices 17, 72(5), 31–40.

By: D. Alden, Z. Bryan, B. Gaddy, I. Bryan, G. Callsen, A. Koukitu, Y. Kumagai, A. Hoffmann ...

Source: NC State University Libraries
Added: August 6, 2018

conference paper

Point defect management in GaN by Fermi-level control during growth

Hoffmann, M. P., Tweedie, J., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., … Collazo, R. Gallium nitride materials and devices ix, 8986.

By: M. Hoffmann, J. Tweedie, R. Kirste, Z. Bryan, I. Bryan, M. Gerhold, Z. Sitar, R. Collazo

Source: NC State University Libraries
Added: August 6, 2018

review

Ultrawide-bandgap semiconductors: Research opportunities and challenges

Tsao, J. Y., Chowdhury, S., Hollis, M. A., Jena, D., Johnson, N. M., Jones, K. A., … Grotjohn, T. A. [Review of ]. Advanced Electronic Materials, 4(1).

By: J. Tsao, S. Chowdhury, M. Hollis, D. Jena, N. Johnson, K. Jones, R. Kaplar, S. Rajan ...

Source: NC State University Libraries
Added: August 6, 2018

review

Ultrawide-bandgap semiconductors: Research opportunities and challenges

Tsao, J. Y., Chowdhury, S., Hollis, M. A., Jena, D., Johnson, N. M., Jones, K. A., … Grotjohn, T. A. [Review of ]. Advanced Electronic Materials, 4(1).

By: J. Tsao, S. Chowdhury, M. Hollis, D. Jena, N. Johnson, K. Jones, R. Kaplar, S. Rajan ...

Source: NC State University Libraries
Added: August 6, 2018

Funding History

Funding history based on the linked ORCID record. Updated: February 17th, 2020 11:45

grant August 1, 2019 - July 31, 2022
Advanced doping techniques for AlGaN-based power devices
Directorate for Engineering
grant March 1, 2017 - February 28, 2022
CAREER: Engineering point defect formation in UWBG-based optoelectronic devices
Directorate for Engineering
grant August 1, 2015 - July 31, 2018
A pathway to controllable n-type doping in AlGaN alloys for high power devices
Directorate for Engineering
grant August 15, 2013 - January 31, 2017
Materials World Network: Quasi-Phase Matching in Non-Centrosymmetric Wide Band Gap Semiconductors.
Directorate for Mathematical & Physical Sciences

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