Ramon R Collazo

Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activation

JOURNAL OF APPLIED PHYSICS, 135(2).

High-current, high-voltage AlN Schottky barrier diodes

Quinones, C. E., Khachariya, D., Reddy, P., Mita, S., Almeter, J., Bagheri, P., … Sitar, Z. (2024, October 1).

(Invited) Understanding Mg-Related Defects for Vertical GaN p-n Junction Structures Via p-Type Ion Implantation

ECS Meeting Abstracts.

Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing

Stein, S. R., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., Tweedie, J., … Pavlidis, S. (2023, December 12). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12.

Anderson transition in compositionally graded p-AlGaN

JOURNAL OF APPLIED PHYSICS, 134(19).

Chemical Vapor Deposition of Monolayer MoS2 on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction Optoelectronics

Sengupta, R., Vaidya, S., Szymanski, D., Khachariya, D., Bockowski, M., Kamler, G., … Pavlidis, S. (2023, March 24). ACS APPLIED NANO MATERIALS, Vol. 3.

Demonstration of near-ideal Schottky contacts to Si-doped AlN

APPLIED PHYSICS LETTERS, 123(17).

High conductivity and low activation energy in p-type AlGaN

Applied Physics Letters, 122(9).

High conductivity in Ge-doped AlN achieved by a non-equilibrium process

APPLIED PHYSICS LETTERS, 122(14).

High p-conductivity in AlGaN enabled by polarization field engineering

APPLIED PHYSICS LETTERS, 122(15).

Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor

APPLIED PHYSICS EXPRESS, 16(3).

(Invited, Digital Presentation) Exploring Interfaces and Polarity to Realize Vertical III-Nitride Superjunction Devices

ECS Meeting Abstracts.

<p>The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN</p>

APPLIED PHYSICS LETTERS, 120(3).

Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates

Rathkanthiwar, S., Graziano, M. B., Tweedie, J., Mita, S., Kirste, R., Collazo, R., & Sitar, Z. (2022, October 25). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 10.

Doping and compensation in heavily Mg doped Al-rich AlGaN films

APPLIED PHYSICS LETTERS, 120(8).

GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions

JOURNAL OF APPLIED PHYSICS, 131(1).

High electron mobility in AlN:Si by point and extended defect management

JOURNAL OF APPLIED PHYSICS, 132(18).

Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3.

Low resistivity, p-type, N-Polar GaN achieved by chemical potential control

APPLIED PHYSICS EXPRESS, 15(8).

On the conduction mechanism in compositionally graded AlGaN

APPLIED PHYSICS LETTERS, 121(7).

Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices

APPLIED PHYSICS EXPRESS, 15(5).

Pseudomorphic growth of thick Al0.6Ga0.4N epilayers on AlN substrates

APPLIED PHYSICS LETTERS, 120(20).

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS, 120(17).

Spintronic Terahertz Emission in Ultrawide Bandgap Semiconductor/Ferromagnet Heterostructures

Comstock, A., Biliroglu, M., Seyitliyev, D., McConnell, A., Vetter, E., Reddy, P., … Sun, D. (2022, October 31). ADVANCED OPTICAL MATERIALS, Vol. 10.

Tracking of Point Defects in the Full Compositional Range of AlGaN via Photoluminescence Spectroscopy

Hyun Kim, J., Bagheri, P., Kirste, R., Reddy, P., Collazo, R., & Sitar, Z. (2022, December 9). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 12.

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

APPLIED PHYSICS EXPRESS, 15(10).

(Invited) Ion Implantation and Polarity Control: Paths Toward a III-Nitride Superjunction

ECS Meeting Abstracts.

A pathway to highly conducting Ge-doped AlGaN

JOURNAL OF APPLIED PHYSICS, 130(20).

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

APPLIED PHYSICS LETTERS, 118(2).

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

APPLIED PHYSICS LETTERS, 118(11).

Native oxide reconstructions on AlN and GaN (0001) surfaces

JOURNAL OF APPLIED PHYSICS, 129(19).

On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).

On the Ge shallow-to-deep level transition in Al-rich AlGaN

JOURNAL OF APPLIED PHYSICS, 130(5).

On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers

APPLIED PHYSICS LETTERS, 118(12).

Role of oxygen diffusion in the dislocation reduction of epitaxial AlN on sapphire during high-temperature annealing

JOURNAL OF APPLIED PHYSICS, 130(20).

Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

APPLIED PHYSICS LETTERS, 118(4).

Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength

Kirste, R., Sarkar, B., Reddy, P., Guo, Q., Collazo, R., & Sitar, Z. (2021, December 15). JOURNAL OF MATERIALS RESEARCH, Vol. 12.

Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN

APPLIED PHYSICS LETTERS, 119(18).

Substrate Modification during Chemical Vapor Deposition of hBN on Sapphire

ACS APPLIED MATERIALS & INTERFACES, 13(45), 54516–54526.

Systematic oxygen impurity reduction in smooth N-polar GaN by chemical potential control

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).

Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies

APPLIED PHYSICS LETTERS, 119(2).

Tuning Microbial Activity via Programmatic Alteration of Cell/Substrate Interfaces

Gulyuk, A. V., LaJeunesse, D. R., Collazo, R., & Ivanisevic, A. (2021, May 24). ADVANCED MATERIALS, Vol. 5.

UV illumination effects on AlGaN/GaN HEMTs for tunable RF oscillators

2021 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS), pp. 168–170.

Weak localization and dimensional crossover in compositionally graded AlxGa1-xN

APPLIED PHYSICS LETTERS, 118(8).

(Invited) A Path Toward Vertical GaN Superjunction Devices

ECS Transactions, 98(6), 69–79.

Cathodoluminescence of silicon doped aluminum nitride with scanning transmission electron microscopy

APL MATERIALS, 8(9).

Complexes and compensation in degenerately donor doped GaN

APPLIED PHYSICS LETTERS, 117(10).

High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates

Applied Physics Letters, 116(8), 081101.

Hydride vapor phase epitaxy of Si -doped AlN layers using SiCl 4 as a doping gas

JOURNAL OF CRYSTAL GROWTH, 545.

Modulating the Stress Response of E. coli at GaN Interfaces Using Surface Charge, Surface Chemistry, and Genetic Mutations

ACS APPLIED BIO MATERIALS, 3(10), 7211–7218.

Recovery kinetics in high temperature annealed AlN heteroepitaxial films

JOURNAL OF APPLIED PHYSICS, 127(11).

Role of polarity in SiN on Al/GaN and the pathway to stable contacts

Semiconductor Science and Technology, 35(5), 055007.

Shallow Si donor in ion-implanted homoepitaxial AlN

Applied Physics Letters, 116(17), 172103.

Strain Recovery and Defect Characterization in Mg-Implanted Homoepitaxial GaN on High-Quality GaN Substrates

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 257(4).

Study of Dislocations in Homoepitaxially and Heteroepitaxially Grown AlN Layers

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 217(24).

The 2020 UV emitter roadmap

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 53(50).

Oxygen and silicon point defects in Al0.65Ga0.35N

PHYSICAL REVIEW MATERIALS, 3(5).

Quasi-phase-matched second harmonic generation of UV light using AlN waveguides

APPLIED PHYSICS LETTERS, 114(10).

The polarization field in Al-rich AlGaN multiple quantum wells

Guo, Q., Kirste, R., Mita, S., Tweedie, J., Reddy, P., Washiyama, S., … Sitar, Z. (2019, June 1). JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 58.

The role of transient surface morphology on composition control in AlGaN layers and wells

APPLIED PHYSICS LETTERS, 114(3).

A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 124(11).

Bioelectronics communication: encoding yeast regulatory responses using nanostructured gallium nitride thin films

Nanoscale, 10(24), 11506–11516.

Bulk and Surface Electronic Properties of Inorganic Materials: Tools to Guide Cellular Behavior

[Review of ]. SMALL METHODS, 2(9).

Characterization of Pseudomonas aeruginosa Films on Different Inorganic Surfaces before and after UV Light Exposure

LANGMUIR, 34(36), 10806–10815.

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

APPLIED PHYSICS LETTERS, 112(6).

Improvement in detection limit for time-of-flight SIMS analysis of dopants in GaN structures

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 36(3).

Noninvasive Stimulation of Neurotypic Cells Using Persistent Photoconductivity of Gallium Nitride

ACS Omega, 3(1), 615–621.

On Contacts to III-nitride deep-UV emitters

2018 3rd International Conference on Microwave and Photonics (ICMAP), 2018-January, 1–2.

On compensation in Si-doped AlN

APPLIED PHYSICS LETTERS, 112(15).

Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(6).

Point-Defect Nature of the Ultraviolet Absorption Band in AIN

PHYSICAL REVIEW APPLIED, 9(5).

Probing collective oscillation ofd-orbital electrons at the nanoscale

Applied Physics Letters, 112(6), 061102.