Ramon Collazo

Sengupta, R., Vaidya, S., Szymanski, D., Khachariya, D., Bockowski, M., Kamler, G., … Pavlidis, S. (2023, March 24). Chemical Vapor Deposition of Monolayer MoS2 on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction Optoelectronics. ACS APPLIED NANO MATERIALS, Vol. 3. https://doi.org/10.1021/acsanm.3c00038

Rathkanthiwar, S., Bagheri, P., Khachariya, D., Mita, S., Quiñones-García, C., Guan, Y., … Sitar, Z. (2023). High conductivity and low activation energy in p-type AlGaN. Applied Physics Letters. https://doi.org/10.1063/5.0141863

Bagheri, P., Quinones-Garcia, C., Khachariya, D., Loveless, J., Guan, Y., Rathkanthiwar, S., … Sitar, Z. (2023). High conductivity in Ge-doped AlN achieved by a non-equilibrium process. APPLIED PHYSICS LETTERS, 122(14). https://doi.org/10.1063/5.0146439

Rathkanthiwar, S., Reddy, P., Moody, B., Quinones-Garcia, C., Bagheri, P., Khachariya, D., … Sitar, Z. (2023). High p-conductivity in AlGaN enabled by polarization field engineering. APPLIED PHYSICS LETTERS, 122(15). https://doi.org/10.1063/5.0143427

Stein, S. R., Khachariya, D., Mita, S., Breckenridge, M. H., Tweedie, J., Reddy, P., … Pavlidis, S. (2023). Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor. APPLIED PHYSICS EXPRESS, 16(3). https://doi.org/10.35848/1882-0786/acc443

Pavlidis, S., Khachariya, D., Szymanski, D., Reddy, P., Kohn, E., Sitar, Z., & Collazo, R. (2022). (Invited, Digital Presentation) Exploring Interfaces and Polarity to Realize Vertical III-Nitride Superjunction Devices. ECS Meeting Abstracts. https://doi.org/10.1149/MA2022-01311313mtgabs

Wang, K., Kirste, R., Mita, S., Washiyama, S., Mecouch, W., Reddy, P., … Sitar, Z. (2022). <p>The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN</p>. APPLIED PHYSICS LETTERS, 120(3). https://doi.org/10.1063/5.0077628

Rathkanthiwar, S., Graziano, M. B., Tweedie, J., Mita, S., Kirste, R., Collazo, R., & Sitar, Z. (2022, October 25). Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 10. https://doi.org/10.1002/pssr.202200323

Bagheri, P., Klump, A., Washiyama, S., Breckenridge, M. H., Kim, J. H., Guan, Y., … Sitar, Z. (2022). Doping and compensation in heavily Mg doped Al-rich AlGaN films. APPLIED PHYSICS LETTERS, 120(8). https://doi.org/10.1063/5.0082992

Szymanski, D., Khachariya, D., Eldred, T. B., Bagheri, P., Washiyama, S., Chang, A., … Sitar, Z. (2022). GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions. JOURNAL OF APPLIED PHYSICS, 131(1). https://doi.org/10.1063/5.0076044

Bagheri, P., Quinones-Garcia, C., Khachariya, D., Rathkanthiwar, S., Reddy, P., Kirste, R., … Sitar, Z. (2022). High electron mobility in AlN:Si by point and extended defect management. JOURNAL OF APPLIED PHYSICS, 132(18). https://doi.org/10.1063/5.0124589

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3. https://doi.org/10.1002/pssr.202100619

Rathkanthiwar, S., Szymanski, D., Khachariya, D., Bagheri, P., Kim, J. H., Mita, S., … Sitar, Z. (2022). Low resistivity, p-type, N-Polar GaN achieved by chemical potential control. APPLIED PHYSICS EXPRESS, 15(8). https://doi.org/10.35848/1882-0786/ac8273

Jadhav, A., Bagheri, P., Klump, A., Khachariya, D., Mita, S., Reddy, P., … Sarkar, B. (2022). On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1). https://doi.org/10.1088/1361-6641/ac3710

Rathkanthiwar, S., Bagheri, P., Khachariya, D., Kim, J. H., Kajikawa, Y., Reddy, P., … Sitar, Z. (2022). On the conduction mechanism in compositionally graded AlGaN. APPLIED PHYSICS LETTERS, 121(7). https://doi.org/10.1063/5.0100756

Rathkanthiwar, S., Bagheri, P., Khachariya, D., Mita, S., Pavlidis, S., Reddy, P., … Collazo, R. (2022). Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices. APPLIED PHYSICS EXPRESS, 15(5). https://doi.org/10.35848/1882-0786/ac6566

Rathkanthiwar, S., Dycus, J. H., Mita, S., Kirste, R., Tweedie, J., Collazo, R., & Sitar, Z. (2022). Pseudomorphic growth of thick Al0.6Ga0.4N epilayers on AlN substrates. APPLIED PHYSICS LETTERS, 120(20). https://doi.org/10.1063/5.0092937

Khachariya, D., Mita, S., Reddy, P., Dangi, S., Dycus, J. H., Bagheri, P., … Pavlidis, S. (2022). Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS, 120(17). https://doi.org/10.1063/5.0083966

Comstock, A., Biliroglu, M., Seyitliyev, D., McConnell, A., Vetter, E., Reddy, P., … Sun, D. (2022, October 31). Spintronic Terahertz Emission in Ultrawide Bandgap Semiconductor/Ferromagnet Heterostructures. ADVANCED OPTICAL MATERIALS, Vol. 10. https://doi.org/10.1002/adom.202201535

Szymanski, D., Wang, K., Kaess, F., Kirste, R., Mita, S., Reddy, P., … Collazo, R. (2022). Systematic oxygen impurity reduction in smooth N-polar GaN by chemical potential control. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1). https://doi.org/10.1088/1361-6641/ac3638

Hyun Kim, J., Bagheri, P., Kirste, R., Reddy, P., Collazo, R., & Sitar, Z. (2022, December 9). Tracking of Point Defects in the Full Compositional Range of AlGaN via Photoluminescence Spectroscopy. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 12. https://doi.org/10.1002/pssa.202200390

Khachariya, D., Stein, S., Mecouch, W., Breckenridge, M. H., Rathkanthiwar, S., Mita, S., … Sitar, Z. (2022). Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing. APPLIED PHYSICS EXPRESS, 15(10). https://doi.org/10.35848/1882-0786/ac8f81

Collazo, R., Szymanski, D., Khachariya, D., Breckenridge, M. H., Guan, Y., Bagheri, P., … Sitar, Z. (2021). (Invited) Ion Implantation and Polarity Control: Paths Toward a III-Nitride Superjunction. ECS Meeting Abstracts. https://doi.org/10.1149/MA2021-0234983mtgabs

Bagheri, P., Kim, J. H., Washiyama, S., Reddy, P., Klump, A., Kirste, R., … Sitar, Z. (2021). A pathway to highly conducting Ge-doped AlGaN. JOURNAL OF APPLIED PHYSICS, 130(20). https://doi.org/10.1063/5.0071791

Breckenridge, M. H., Tweedie, J., Reddy, P., Guan, Y., Bagheri, P., Szymanski, D., … Sitar, Z. (2021). High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing. APPLIED PHYSICS LETTERS, 118(2). https://doi.org/10.1063/5.0038628

Breckenridge, M. H., Bagheri, P., Guo, Q., Sarkar, B., Khachariya, D., Pavlidis, S., … Sitar, Z. (2021). High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN. APPLIED PHYSICS LETTERS, 118(11). https://doi.org/10.1063/5.0042857

Mirrielees, K. J., Dycus, J. H., Baker, J. N., Reddy, P., Collazo, R., Sitar, Z., … Irving, D. L. (2021). Native oxide reconstructions on AlN and GaN (0001) surfaces. JOURNAL OF APPLIED PHYSICS, 129(19). https://doi.org/10.1063/5.0048820

Bagheri, P., Reddy, P., Mita, S., Szymanski, D., Kim, J. H., Guan, Y., … Sitar, Z. (2021). On the Ge shallow-to-deep level transition in Al-rich AlGaN. JOURNAL OF APPLIED PHYSICS, 130(5). https://doi.org/10.1063/5.0059037

Khachariya, D., Szymanski, D., Breckenridge, M. H., Reddy, P., Kohn, E., Sitar, Z., … Pavlidis, S. (2021). On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers. APPLIED PHYSICS LETTERS, 118(12). https://doi.org/10.1063/5.0039888

Cancellara, L., Markurt, T., Schulz, T., Albrecht, M., Hagedorn, S., Walde, S., … Sitar, Z. (2021). Role of oxygen diffusion in the dislocation reduction of epitaxial AlN on sapphire during high-temperature annealing. JOURNAL OF APPLIED PHYSICS, 130(20). https://doi.org/10.1063/5.0065935

Washiyama, S., Mirrielees, K. J., Bagheri, P., Baker, J. N., Kim, J.-H., Guo, Q., … Sitar, Z. (2021). Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping. APPLIED PHYSICS LETTERS, 118(4). https://doi.org/10.1063/5.0035957

Kirste, R., Sarkar, B., Reddy, P., Guo, Q., Collazo, R., & Sitar, Z. (2021, December 15). Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength. JOURNAL OF MATERIALS RESEARCH, Vol. 12. https://doi.org/10.1557/s43578-021-00443-8

Reddy, P., Khachariya, D., Mecouch, W., Breckenridge, M. H., Bagheri, P., Guan, Y., … Sitar, Z. (2021). Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN. APPLIED PHYSICS LETTERS, 119(18). https://doi.org/10.1063/5.0062831

Bansal, A., Hilse, M., Huet, B., Wang, K., Kozhakhmetov, A., Kim, J. H., … Redwing, J. M. (2021). Substrate Modification during Chemical Vapor Deposition of hBN on Sapphire. ACS APPLIED MATERIALS & INTERFACES, 13(45), 54516–54526. https://doi.org/10.1021/acsami.1c14591

Kim, J. H., Bagheri, P., Washiyama, S., Klump, A., Kirste, R., Mita, S., … Sitar, Z. (2021). Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies. APPLIED PHYSICS LETTERS, 119(2). https://doi.org/10.1063/5.0055409

Gulyuk, A. V., LaJeunesse, D. R., Collazo, R., & Ivanisevic, A. (2021, May 24). Tuning Microbial Activity via Programmatic Alteration of Cell/Substrate Interfaces. ADVANCED MATERIALS, Vol. 5. https://doi.org/10.1002/adma.202004655

Stein, S., Robbins, M., Reddy, P., Collazo, R., & Pavlidis, S. (2021). UV illumination effects on AlGaN/GaN HEMTs for tunable RF oscillators. 2021 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS), pp. 168–170. https://doi.org/10.1109/RWS50353.2021.9360392

Al-Tawhid, A., Shafe, A.-A., Bagheri, P., Guan, Y., Reddy, P., Mita, S., … Ahadi, K. (2021). Weak localization and dimensional crossover in compositionally graded AlxGa1-xN. APPLIED PHYSICS LETTERS, 118(8). https://doi.org/10.1063/5.0042098

Khachariya, D., Szymanski, D., Reddy, P., Kohn, E., Sitar, Z., Collazo, R., & Pavlidis, S. (2020). (Invited) A Path Toward Vertical GaN Superjunction Devices. ECS Transactions, 98(6), 69–79. https://doi.org/10.1149/09806.0069ecst

Hauwiller, M. R., Stowe, D., Eldred, T. B., Mita, S., Collazo, R., Sitar, Z., & LeBeau, J. (2020). Cathodoluminescence of silicon doped aluminum nitride with scanning transmission electron microscopy. APL MATERIALS, 8(9). https://doi.org/10.1063/5.0019863

Baker, J. N., Bowes, P. C., Harris, J. S., Collazo, R., Sitar, Z., & Irving, D. L. (2020). Complexes and compensation in degenerately donor doped GaN. APPLIED PHYSICS LETTERS, 117(10). https://doi.org/10.1063/5.0013988

Reddy, P., Breckenridge, M. H., Guo, Q., Klump, A., Khachariya, D., Pavlidis, S., … Sitar, Z. (2020). High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates. Applied Physics Letters, 116(8), 081101. https://doi.org/10.1063/1.5138127

Yamamoto, R., Takekawa, N., Goto, K., Nagashima, T., Dalmau, R., Schlesser, R., … Kumagai, Y. (2020). Hydride vapor phase epitaxy of Si -doped AlN layers using SiCl 4 as a doping gas. JOURNAL OF CRYSTAL GROWTH, 545. https://doi.org/10.1016/j.jcrysgro.2020.125730

Gleco, S., Reddy, P., Kirste, R., Collazo, R., LaJeunesse, D., & Ivanisevic, A. (2020). Modulating the Stress Response of E. coli at GaN Interfaces Using Surface Charge, Surface Chemistry, and Genetic Mutations. ACS APPLIED BIO MATERIALS, 3(10), 7211–7218. https://doi.org/10.1021/acsabm.0c01007

Washiyama, S., Guan, Y., Mita, S., Collazo, R., & Sitar, Z. (2020). Recovery kinetics in high temperature annealed AlN heteroepitaxial films. JOURNAL OF APPLIED PHYSICS, 127(11). https://doi.org/10.1063/5.0002891

Reddy, P., Khachariya, D., Szymanski, D., Breckenridge, M. H., Sarkar, B., Pavlidis, S., … Kohn, E. (2020). Role of polarity in SiN on Al/GaN and the pathway to stable contacts. Semiconductor Science and Technology, 35(5), 055007. https://doi.org/10.1088/1361-6641/ab7775

Breckenridge, M. H., Guo, Q., Klump, A., Sarkar, B., Guan, Y., Tweedie, J., … Sitar, Z. (2020). Shallow Si donor in ion-implanted homoepitaxial AlN. Applied Physics Letters, 116(17), 172103. https://doi.org/10.1063/1.5144080

Wang, Y., Huynh, K., Liao, M. E., Yu, H.-M., Bai, T., Tweedie, J., … Goorsky, M. S. (2020). Strain Recovery and Defect Characterization in Mg-Implanted Homoepitaxial GaN on High-Quality GaN Substrates. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 257(4). https://doi.org/10.1002/pssb.201900705

Goto, K., Takekawa, N., Nagashima, T., Yamamoto, R., Pozina, G., Dalmau, R., … Kumagai, Y. (2020). Study of Dislocations in Homoepitaxially and Heteroepitaxially Grown AlN Layers. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 217(24). https://doi.org/10.1002/pssa.202000465

Amano, H., Collazo, R., Santi, C. D., Einfeldt, S., Funato, M., Glaab, J., … Zhang, Y. (2020). The 2020 UV emitter roadmap. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 53(50). https://doi.org/10.1088/1361-6463/aba64c

Harris, J. S., Gaddy, B. E., Collazo, R., Sitar, Z., & Irving, D. L. (2019). Oxygen and silicon point defects in Al0.65Ga0.35N. PHYSICAL REVIEW MATERIALS, 3(5). https://doi.org/10.1103/PhysRevMaterials.3.054604

Alden, D., Troha, T., Kirste, R., Mita, S., Guo, Q., Hoffmann, A., … Sitar, Z. (2019). Quasi-phase-matched second harmonic generation of UV light using AlN waveguides. APPLIED PHYSICS LETTERS, 114(10). https://doi.org/10.1063/1.5087058

Graziano, M. B., Bryan, I., Bryan, Z., Kirste, R., Tweedie, J., Collazo, R., & Sitar, Z. (2019). Structural characteristics of m-plane AlN substrates and homoepitaxial films. JOURNAL OF CRYSTAL GROWTH, 507, 389–394. https://doi.org/10.1016/j.jcrysgro.2018.07.012

Guo, Q., Kirste, R., Mita, S., Tweedie, J., Reddy, P., Washiyama, S., … Sitar, Z. (2019, June 1). The polarization field in Al-rich AlGaN multiple quantum wells. JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 58. https://doi.org/10.7567/1347-4065/ab07a9

Dycus, J. H., Washiyama, S., Eldred, T. B., Guan, Y., Kirste, R., Mita, S., … LeBeau, J. M. (2019). The role of transient surface morphology on composition control in AlGaN layers and wells. APPLIED PHYSICS LETTERS, 114(3). https://doi.org/10.1063/1.5063933

Washiyama, S., Reddy, P., Kaess, F., Kirste, R., Mita, S., Collazo, R., & Sitar, Z. (2018). A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition. JOURNAL OF APPLIED PHYSICS, 124(11). https://doi.org/10.1063/1.5045058

Snyder, P. J., LaJeunesse, D. R., Reddy, P., Kirste, R., Collazo, R., & Ivanisevic, A. (2018). Bioelectronics communication: encoding yeast regulatory responses using nanostructured gallium nitride thin films. Nanoscale, 10(24), 11506–11516. https://doi.org/10.1039/C8NR03684E

Snyder, P. J., Reddy, P., Kirste, R., Collazo, R., & Ivanisevic, A. (2018). [Review of Bulk and Surface Electronic Properties of Inorganic Materials: Tools to Guide Cellular Behavior]. SMALL METHODS, 2(9). https://doi.org/10.1002/smtd.201800016

Gulyuk, A. V., LaJeunesse, D. R., Collazo, R., & Ivanisevic, A. (2018). Characterization of Pseudomonas aeruginosa Films on Different Inorganic Surfaces before and after UV Light Exposure. LANGMUIR, 34(36), 10806–10815. https://doi.org/10.1021/acs.langmuir.8b02079

Bryan, I., Bryan, Z., Washiyama, S., Reddy, P., Gaddy, B., Sarkar, B., … Sitar, Z. (2018). Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD. APPLIED PHYSICS LETTERS, 112(6). https://doi.org/10.1063/1.5011984

Klump, A., Zhou, C., Stevie, F. A., Collazo, R., & Sitar, Z. (2018). Improvement in detection limit for time-of-flight SIMS analysis of dopants in GaN structures. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 36(3). https://doi.org/10.1116/1.5013001

Snyder, P. J., Reddy, P., Kirste, R., LaJeunesse, D. R., Collazo, R., & Ivanisevic, A. (2018). Noninvasive Stimulation of Neurotypic Cells Using Persistent Photoconductivity of Gallium Nitride. ACS Omega, 3(1), 615–621. https://doi.org/10.1021/ACSOMEGA.7B01894

Sarkar, B., Reddy, P., Klump, A., Rounds, R., Breckenridge, M. R., Haidet, B. B., … Sitar, Z. (2018). On Contacts to III-nitride deep-UV emitters. 2018 3rd International Conference on Microwave and Photonics (ICMAP). https://doi.org/10.1109/icmap.2018.8354575

Harris, J. S., Baker, J. N., Gaddy, B. E., Bryan, I., Bryan, Z., Mirrielees, K. J., … Irving, D. L. (2018). On compensation in Si-doped AlN. APPLIED PHYSICS LETTERS, 112(15). https://doi.org/10.1063/1.5022794

Reddy, P., Washiyama, S., Mecouch, W., Hernandez-Balderrama, L. H., Kaess, F., Breckenridge, M. H., … Sitar, Z. (2018). Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(6). https://doi.org/10.1116/1.5050501

Alden, D., Harris, J. S., Bryan, Z., Baker, J. N., Reddy, P., Mita, S., … Sitar, Z. (2018). Point-Defect Nature of the Ultraviolet Absorption Band in AIN. PHYSICAL REVIEW APPLIED, 9(5). https://doi.org/10.1103/physrevapplied.9.054036

Dhall, R., Vigil-Fowler, D., Houston Dycus, J., Kirste, R., Mita, S., Sitar, Z., … LeBeau, J. M. (2018). Probing collective oscillation ofd-orbital electrons at the nanoscale. Applied Physics Letters, 112(6), 061102. https://doi.org/10.1063/1.5012742

Dycus, J. H., Mirrielees, K. J., Grimley, E. D., Kirste, R., Mita, S., Sitar, Z., … LeBeau, J. M. (2018). Structure of Ultrathin Native Oxides on III-Nitride Surfaces. ACS APPLIED MATERIALS & INTERFACES, 10(13), 10607–10611. https://doi.org/10.1021/acsami.8b00845

Rounds, R., Sarkar, B., Alden, D., Guo, Q., Klump, A., Hartmann, C., … Collazo, R. (2018). The influence of point defects on the thermal conductivity of AlN crystals. JOURNAL OF APPLIED PHYSICS, 123(18). https://doi.org/10.1063/1.5028141

Rounds, R., Sarkar, B., Sochacki, T., Bockowski, M., Imanishi, M., Mori, Y., … Sitar, Z. (2018). Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes. JOURNAL OF APPLIED PHYSICS, 124(10). https://doi.org/10.1063/1.5047531

Rounds, R., Sarkar, B., Klump, A., Hartmann, C., Nagashima, T., Kirste, R., … Collazo, R. (2018). Thermal conductivity of single-crystalline AIN. APPLIED PHYSICS EXPRESS, 11(7). https://doi.org/10.7567/apex.11.071001

Snyder, P. J., Reddy, P., Kirste, R., LaJeunesse, D. R., Collazo, R., & Ivanisevic, A. (2018). Variably doped nanostructured gallium nitride surfaces can serve as biointerfaces for neurotypic PC12 cells and alter their behavior. RSC ADVANCES, 8(64), 36722–36730. https://doi.org/10.1039/c8ra06836d

Sarkar, B., Reddy, P., Kaess, F., Haidet, B. B., Tweedie, J., Mita, S., … al. (2017). (Invited) Material Considerations for the Development of III-nitride Power Devices. GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 7, Vol. 80, pp. 29–36. https://doi.org/10.1149/08007.0029ecst

Reddy, P., Kaess, F., Tweedie, J., Kirste, R., Mita, S., Collazo, R., & Sitar, Z. (2017). Defect quasi Fermi level control-based C-N reduction in GaN: Evidence for the role of minority carriers. APPLIED PHYSICS LETTERS, 111(15). https://doi.org/10.1063/1.5000720

Reddy, P., Sarkar, B., Kaess, F., Gerhold, M., Kohn, E., Collazo, R., & Sitar, Z. (2017). Defect-free Ni/GaN Schottky barrier behavior with high temperature stability. APPLIED PHYSICS LETTERS, 110(1). https://doi.org/10.1063/1.4973762

Sarkar, B., Mita, S., Reddy, P., Klump, A., Kaess, F., Tweedie, J., … Sitar, Z. (2017). High free carrier concentration in p-GaN grown on AlN substrates. APPLIED PHYSICS LETTERS, 111(3). https://doi.org/10.1063/1.4995239

Lamprecht, M., Jmerik, V. N., Collazo, R., Sitar, Z., Ivanov, S. V., & Thonke, K. (2017, August). Model for the deep defect-related emission bands between 1.4 and 2.4 eV in AlN. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 254. https://doi.org/10.1002/pssb.201600714

Haidet, B. B., Sarkar, B., Reddy, P., Bryan, I., Bryan, Z., Kirste, R., … Sitar, Z. (2017). Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN. JAPANESE JOURNAL OF APPLIED PHYSICS, 56(10). https://doi.org/10.7567/jjap.56.100302

Sarkar, B., Reddy, P., Klump, A., Kaess, F., Rounds, R., Kirste, R., … Sitar, Z. (2017). On Ni/Au Alloyed Contacts to Mg-Doped GaN. Journal of Electronic Materials, 47(1), 305–311. https://doi.org/10.1007/S11664-017-5775-3

Majkic, A., Franke, A., Kirste, R., Schlesser, R., Collazo, R., Sitar, Z., & Zgonik, M. (2017). Optical nonlinear and electro-optical coefficients in bulk aluminium nitride single crystals. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 254(9). https://doi.org/10.1002/pssb.201700077

Thonke, K., Lamprecht, M., Collazo, R., & Sitar, Z. (2017). Optical signatures of silicon and oxygen related DX centers in AlN. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 214(9). https://doi.org/10.1002/pssa.201600749

Sarkar, B., Haidet, B. B., Reddy, P., Kirste, R., Collazo, R., & Sitar, Z. (2017). Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatment. APPLIED PHYSICS EXPRESS, 10(7). https://doi.org/10.7567/apex.10.071001

Snyder, P. J., Kirste, R., Collazo, R., & Ivanisevic, A. (2017). Persistent Photoconductivity, Nanoscale Topography, and Chemical Functionalization Can Collectively Influence the Behavior of PC12 Cells on Wide Bandgap Semiconductor Surfaces. SMALL, 13(24). https://doi.org/10.1002/smll.201700481

Reddy, P., Washiyama, S., Kaess, F., Kirste, R., Mita, S., Collazo, R., & Sitar, Z. (2017). Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN. Journal of Applied Physics, 122(24), 245702. https://doi.org/10.1063/1.5002682

Lamprecht, M., Grund, C., Bauer, S., Collazo, R., Sitar, Z., & Thonke, K. (2017). Slow decay of a defect-related emission band at 2.05eV in AlN: Signatures of oxygen-related DX states. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 254(5). https://doi.org/10.1002/pssb.201600338

Shelton, C. T., Bryan, I., Paisley, E. A., Sachet, E., Ihlefeld, J. F., Lavrik, N., … Maria, J.-P. (2017). Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy. APL MATERIALS, 5(9). https://doi.org/10.1063/1.4993840

Dycus, J. H., Mirrielees, K. J., Grimley, E. D., Dhall, R., Kirste, R., Mita, S., … LeBeau, J. M. (2017). Structure and Chemistry of Oxide Surface Reconstructions in III-Nitrides Observed using STEM EELS. Microscopy and Microanalysis, 23(S1), 1444–1445. https://doi.org/10.1017/S1431927617007887

Tsao, J. Y., Chowdhury, S., Hollis, M. A., Jena, D., Johnson, N. M., Jones, K. A., … Simmons, J. A. (2017). Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges. Advanced Electronic Materials, 4(1), 1600501. https://doi.org/10.1002/aelm.201600501

Huang, L., Li, G., Gurarslan, A., Yu, Y., Kirste, R., Guo, W., … Cao, L. (2016). Atomically Thin MoS2 Narrowband and Broadband Light Superabsorbers. ACS NANO, 10(8), 7493–7499. https://doi.org/10.1021/acsnano.6b02195

Kaess, F., Mita, S., Xie, J., Reddy, P., Klump, A., Hernandez-Balderrama, L. H., … Sitar, Z. (2016). Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition. JOURNAL OF APPLIED PHYSICS, 120(10). https://doi.org/10.1063/1.4962017

Alden, D., Guo, W., Kirste, R., Kaess, F., Bryan, I., Troha, T., … Sitar, Z. (2016). Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications. APPLIED PHYSICS LETTERS, 108(26). https://doi.org/10.1063/1.4955033

Rohrbaugh, N., Hernandez-Balderrama, L., Kaess, F., Kirste, R., Collazo, R., & Ivanisevic, A. (2016). HgNO3 sensitivity of AlGaN/GaN field effect transistors functionalized with phytochelating peptides. AIP ADVANCES, 6(6). https://doi.org/10.1063/1.4953806

Franke, A., Hoffmann, M. P., Kirste, R., Bobea, M., Tweedie, J., Kaess, F., … Sitar, Z. (2016). High reflectivity III-nitride UV-C distributed Bragg reflectors for vertical cavity emitting lasers. JOURNAL OF APPLIED PHYSICS, 120(13). https://doi.org/10.1063/1.4963831

Reddy, P., Washiyama, S., Kaess, F., Breckenridge, M. H., Hernandez-Balderrama, L. H., Haidet, B. B., … Sitar, Z. (2016). High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies. JOURNAL OF APPLIED PHYSICS, 119(14). https://doi.org/10.1063/1.4945775

Tojo, S., Yamamoto, R., Tanaka, R., Thieu, Q. T., Togashi, R., Nagashima, T., … Kumagai, Y. (2016). Influence of high-temperature processing on the surface properties of bulk AlN substrates. JOURNAL OF CRYSTAL GROWTH, 446, 33–38. https://doi.org/10.1016/j.jcrysgro.2016.04.030

Snyder, P. J., Kirste, R., Collazoa, R., & Ivanisevic, A. (2016). Nanoscale topography, semiconductor polarity and surface functionalization: additive and cooperative effects on PC12 cell behavior. RSC ADVANCES, 6(100), 97873–97881. https://doi.org/10.1039/c6ra21936e

Abate, Y., Seidlitz, D., Fali, A., Gamage, S., Babicheva, V., Yakovlev, V. S., … Dietz, N. (2016). Nanoscopy of Phase Separation in InxGa1-xN Alloys. ACS APPLIED MATERIALS & INTERFACES, 8(35), 23160–23166. https://doi.org/10.1021/acsami.6b06766

Bain, L. E., Kirste, R., Johnson, C. A., Ghashghaei, H. T., Collazo, R., & Ivanisevic, A. (2016). Neurotypic cell attachment and growth on III-nitride lateral polarity structures. MATERIALS SCIENCE & ENGINEERING C-MATERIALS FOR BIOLOGICAL APPLICATIONS, 58, 1194–1198. https://doi.org/10.1016/j.msec.2015.09.084

Berg, N. G., Franke, A., Kirste, R., Collazo, R., & Ivanisevic, A. (2016). Photoluminescence changes of III-Nitride lateral polarity structures after chemical functionalization. MATERIALS RESEARCH EXPRESS, 3(12). https://doi.org/10.1088/2053-1591/3/12/125906

Reddy, P., Hoffmann, M. P., Kaess, F., Bryan, Z., Bryan, I., Bobea, M., … Sitar, Z. (2016). Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control. JOURNAL OF APPLIED PHYSICS, 120(18). https://doi.org/10.1063/1.4967397

Mohn, S., Stolyarchuk, N., Markurt, T., Kirste, R., Hoffmann, M. P., Collazo, R., … Albrecht, M. (2016). Polarity Control in Group-III Nitrides beyond Pragmatism. PHYSICAL REVIEW APPLIED, 5(5). https://doi.org/10.1103/physrevapplied.5.054004

Losego, M. D., Paisley, E. A., Craft, H. S., Lam, P. G., Sachet, E., Mita, S., … Maria, J.-P. (2016). Selective area epitaxy of magnesium oxide thin films on gallium nitride surfaces. JOURNAL OF MATERIALS RESEARCH, 31(1), 36–45. https://doi.org/10.1557/jmr.2015.332

Franke, A., Hoffmann, P., Hernandez-Balderrama, L., Kaess, F., Bryan, I., Washiyama, S., … Sitar, Z. (2016). Strain engineered high reflectivity DBRs in the deep UV. GALLIUM NITRIDE MATERIALS AND DEVICES XI, Vol. 9748. https://doi.org/10.1117/12.2211700

Bryan, I., Bryan, Z., Mita, S., Rice, A., Tweedie, J., Collazo, R., & Sitar, Z. (2016). Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides. JOURNAL OF CRYSTAL GROWTH, 438, 81–89. https://doi.org/10.1016/j.jcrysgro.2015.12.022

Kaess, F., Reddy, P., Alden, D., Klump, A., Hernandez-Balderrama, L. H., Franke, A., … al. (2016). The effect of illumination power density on carbon defect configuration in silicon doped GaN. JOURNAL OF APPLIED PHYSICS, 120(23). https://doi.org/10.1063/1.4972468

Bryan, I., Bryan, Z., Mita, S., Rice, A., Hussey, L., Shelton, C., … Sitar, Z. (2016). The role of surface kinetics on composition and quality of AlGaN. JOURNAL OF CRYSTAL GROWTH, 451, 65–71. https://doi.org/10.1016/j.jcrysgro.2016.06.055

Lamprecht, M., Grund, C., Neuschl, B., Thonke, K., Bryan, Z., Collazo, R., & Sitar, Z. (2016). Very slow decay of a defect related emission band at 2.4 eV in AlN: Signatures of the Si related shallow DX state. JOURNAL OF APPLIED PHYSICS, 119(15). https://doi.org/10.1063/1.4946828

Haidet, B. B., Bryan, I., Reddy, P., Bryan, Z., Collazo, R., & Sitar, Z. (2015). A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN. JOURNAL OF APPLIED PHYSICS, 117(24). https://doi.org/10.1063/1.4923062

Bain, L. E., Hoffmann, M. P., Bryan, I., Collazo, R., & Ivanisevic, A. (2015). Adsorption and adhesion of common serum proteins to nanotextured gallium nitride. NANOSCALE, 7(6), 2360–2365. https://doi.org/10.1039/c4nr06353h

Reddy, P., Bryan, I., Bryan, Z., Tweedie, J., Washiyama, S., Kirste, R., … Sitar, Z. (2015). Charge neutrality levels, barrier heights, and band offsets at polar AlGaN. APPLIED PHYSICS LETTERS, 107(9). https://doi.org/10.1063/1.4930026

Kirste, R., Rohrbaugh, N., Bryan, I., Bryan, Z., Collazo, R., & Ivanisevic, A. (2015). Electronic Biosensors Based on III-Nitride Semiconductors. ANNUAL REVIEW OF ANALYTICAL CHEMISTRY, VOL 8, Vol. 8, pp. 149–169. https://doi.org/10.1146/annurev-anchem-071114-040247

Kinoshita, T., Nagashima, T., Obata, T., Takashima, S., Yamamoto, R., Togashi, R., … Sitar, Z. (2015). Fabrication of vertical Schottky barrier diodes on n-type freestanding AIN substrates grown by hydride vapor phase epitaxy. APPLIED PHYSICS EXPRESS, 8(6). https://doi.org/10.7567/apex.8.061003

Hoffmann, M. P., Kirste, R., Mita, S., Guo, W., Tweedie, J., Bobea, M., … Sitar, Z. (2015, May). Growth and characterization of AlxGa1-xN lateral polarity structures. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, pp. 1039–1042. https://doi.org/10.1002/pssa.201431740

Bryan, Z., Bryan, I., Xie, J., Mita, S., Sitar, Z., & Collazo, R. (2015). High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates. APPLIED PHYSICS LETTERS, 106(14). https://doi.org/10.1063/1.4917540

Guo, W., Kirste, R., Bryan, I., Bryan, Z., Hussey, L., Reddy, P., … Sitar, Z. (2015). KOH based selective wet chemical etching of AlN, AlxGa1-xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode. APPLIED PHYSICS LETTERS, 106(8). https://doi.org/10.1063/1.4913705

Rohrbaugh, N., Bryan, I., Bryan, Z., Collazo, R., & Ivanisevic, A. (2015). Long-term stability assessment of AlGaN/GaN field effect transistors modified with peptides: Device characteristics vs. surface properties. AIP ADVANCES, 5(9). https://doi.org/10.1063/1.4930192

Guo, W., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., Collazo, R., & Sitar, Z. (2015). Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes. Journal of Applied Physics, 117(11), 113107. https://doi.org/10.1063/1.4915903

Rigler, M., Buh, J., Hoffmann, M. P., Kirste, R., Bobea, M., Mita, S., … Zgonik, M. (2015). Optical characterization of Al- and N-polar AlN waveguides for integrated optics. APPLIED PHYSICS EXPRESS, 8(4). https://doi.org/10.7567/apex.8.042603

Majkic, A., Puc, U., Franke, A., Kirste, R., Collazo, R., Sitar, Z., & Zgonik, M. (2015). Optical properties of aluminum nitride single crystals in the THz region. OPTICAL MATERIALS EXPRESS, 5(10), 2106–2111. https://doi.org/10.1364/ome.5.002106

Bryan, Z., Bryan, I., Mita, S., Tweedie, J., Sitar, Z., & Collazo, R. (2015). Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates. APPLIED PHYSICS LETTERS, 106(23). https://doi.org/10.1063/1.4922385

Rohrbaugh, N., Bryan, I., Bryan, Z., Arellano, C., Collazo, R., & Ivanisevic, A. (2014). AlGaN/GaN field effect transistors functionalized with recognition peptides. Applied Physics Letters, 105(13), 134103. https://doi.org/10.1063/1.4896962

Rohrbaugh, N., Bryan, I., Bryan, Z., Arellano, C., Collazo, R., & Ivanisevic, A. (2014). AlGaN/GaN field effect transistors functionalized with recognition peptides. Applied Physics Letters, 105(13).

Hussey, L., Bryan, I., Kirste, R., Guo, W., Bryan, Z., Mita, S., … Sitar, Z. (2014). Direct Observation of the Polarity Control Mechanism in Aluminum Nitride Grown on Sapphire by Aberration Corrected Scanning Transmission Electron Microscopy. Microscopy and Microanalysis, 20(S3), 162–163. https://doi.org/10.1017/S1431927614002530

Rohrbaugh, N., Bryan, I., Bryan, Z., Collazo, R., & Ivanisevic, A. (2014). Effects of Environmental Exposure on Stability and Conductance Poly-l-lysine Coated AlGaN/GaN High Electron Mobility Transistors. WIDE BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 15, Vol. 61, pp. 147–151. https://doi.org/10.1149/06104.0147ecst

Bryan, Z., Bryan, I., Bobea, M., Hussey, L., Kirste, R., Sitar, Z., & Collazo, R. (2014). Exciton transitions and oxygen as a donor in m-plane AlN homoepitaxial films. JOURNAL OF APPLIED PHYSICS, 115(13). https://doi.org/10.1063/1.4870284

Bryan, Z., Bryan, I., Gaddy, B. E., Reddy, P., Hussey, L., Bobea, M., … Collazo, R. (2014). Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN. APPLIED PHYSICS LETTERS, 105(22). https://doi.org/10.1063/1.4903058

Sochacki, T., Bryan, Z., Amilusik, M., Bobea, M., Fijalkowski, M., Bryan, I., … Sitar, Z. (2014). HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties. JOURNAL OF CRYSTAL GROWTH, 394, 55–60. https://doi.org/10.1016/j.jcrysgro.2014.02.020

Bryan, I., Bryan, Z., Bobea, M., Hussey, L., Kirste, R., Collazo, R., & Sitar, Z. (2014). Homoepitaxial AlN thin films deposited on m-plane (1(1)over-bar00) AlN substrates by metalorganic chemical vapor deposition. JOURNAL OF APPLIED PHYSICS, 116(13). https://doi.org/10.1063/1.4897233

Callsen, G., Wagner, M. R., Reparaz, J. S., Nippert, F., Kure, T., Kalinowski, S., … Sitar, Z. (2014). Phonon pressure coefficients and deformation potentials of wurtzite AlN determined by uniaxial pressure-dependent Raman measurements. PHYSICAL REVIEW B, 90(20). https://doi.org/10.1103/physrevb.90.205206

Shelton, C. T., Sachet, E., Paisley, E. A., Hoffmann, M. P., Rajan, J., Collazo, R., … Maria, J.-P. (2014). Polarity characterization by anomalous x-ray dispersion of ZnO films and GaN lateral polar structures. JOURNAL OF APPLIED PHYSICS, 115(4). https://doi.org/10.1063/1.4863120

Kirste, R., Mita, S., Hoffmann, M. P., Hussey, L., Guo, W., Bryan, I., … Sitar, Z. (2014). Properties of AlN based lateral polarity structures. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 2, Vol. 11, pp. 261–264. https://doi.org/10.1002/pssc.201300287

Hussey, L., White, R. M., Kirste, R., Mita, S., Bryan, I., Guo, W., … Sitar, Z. (2014). Sapphire decomposition and inversion domains in N-polar aluminum nitride. APPLIED PHYSICS LETTERS, 104(3). https://doi.org/10.1063/1.4862982

Reddy, P., Bryan, I., Bryan, Z., Tweedie, J., Kirste, R., Collazo, R., & Sitar, Z. (2014). Schottky contact formation on polar and non-polar AlN. JOURNAL OF APPLIED PHYSICS, 116(19). https://doi.org/10.1063/1.4901954

Paisley, E. A., Gaddy, B. E., LeBeau, J. M., Shelton, C. T., Biegalski, M. D., Christen, H. M., … Maria, J.-P. (2014). Smooth cubic commensurate oxides on gallium nitride. JOURNAL OF APPLIED PHYSICS, 115(6). https://doi.org/10.1063/1.4861172

Guo, W., Bryan, Z., Xie, J., Kirste, R., Mita, S., Bryan, I., … Sitar, Z. (2014). Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates. JOURNAL OF APPLIED PHYSICS, 115(10). https://doi.org/10.1063/1.4868678

Bryan, I., Akouala, C.-R., Tweedie, J., Bryan, Z., Rice, A., Kirste, R., … Sitar, Z. (2014). Surface preparation of non-polar single-crystalline AlN substrates. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, Vol. 11, pp. 454–457. https://doi.org/10.1002/pssc.201300401

Bain, L. E., Collazo, R., Hsu, S.-han, Latham, N. P., Manfra, M. J., & Ivanisevic, A. (2014). Surface topography and chemistry shape cellular behavior on wide band-gap semiconductors. Acta Biomaterialia, 10(6), 2455–2462. https://doi.org/10.1016/J.ACTBIO.2014.02.038

Reddy, P., Bryan, I., Bryan, Z., Guo, W., Hussey, L., Collazo, R., & Sitar, Z. (2014). The effect of polarity and surface states on the Fermi level at III-nitride surfaces. JOURNAL OF APPLIED PHYSICS, 116(12). https://doi.org/10.1063/1.4896377

Gaddy, B. E., Bryan, Z., Bryan, I., Xie, J., Dalmau, R., Moody, B., … Irving, D. L. (2014). The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN. APPLIED PHYSICS LETTERS, 104(20). https://doi.org/10.1063/1.4878657

Kuittinen, T., Tuomisto, F., Kumagai, Y., Nagashima, T., Kinoshita, T., Koukitu, A., … Sitar, Z. (2014). Vacancy defects in UV-transparent HVPE-AlN. Physica Status Solidi (c), 11(3-4), 405–407. https://doi.org/10.1002/PSSC.201300529

Foster, C. M., Collazo, R., Sitar, Z., & Ivanisevic, A. (2013). Aqueous Stability of Ga- and N-Polar Gallium Nitride. LANGMUIR, 29(1), 216–220. https://doi.org/10.1021/la304039n

Foster, C. M., Collazo, R., Sitar, Z., & Ivanisevic, A. (2013). Cell Behavior on Gallium Nitride Surfaces: Peptide Affinity Attachment versus Covalent Functionalization. LANGMUIR, 29(26), 8377–8384. https://doi.org/10.1021/la401503b

Guo, W., Xie, J., Akouala, C., Mita, S., Rice, A., Tweedie, J., … Sitar, Z. (2013). Comparative study of etching high crystalline quality AlN and GaN. JOURNAL OF CRYSTAL GROWTH, 366, 20–25. https://doi.org/10.1016/j.jcrysgro.2012.12.141

Kirste, R., Hoffmann, M. P., Tweedie, J., Bryan, Z., Callsen, G., Kure, T., … Sitar, Z. (2013). Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements. Journal of Applied Physics, 113(10), 103504. https://doi.org/10.1063/1.4794094

Neuschl, B., Thonke, K., Feneberg, M., Goldhahn, R., Wunderer, T., Yang, Z., … Sitar, Z. (2013). Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions. Applied Physics Letters, 103(12). https://doi.org/10.1063/1.4821183

Paisley, E. A., Craft, H. S., Losego, M. D., Lu, H., Gruverman, A., Collazo, R., … Maria, J.-P. (2013). Epitaxial PbxZr1-xTiO3 on GaN. JOURNAL OF APPLIED PHYSICS, 113(7). https://doi.org/10.1063/1.4792599

Paisley, E. A., Craft, H. S., Losego, M. D., Lu, H., Gruverman, A., Collazo, R., … Maria, J. P. (2013). Epitaxial lead zirconate titanate on gallium nitride (vol 113, 074107, 2013). Journal of Applied Physics, Vol. 114.

Makowski, M. S., Bryan, I., Sitar, Z., Arellano, C., Xie, J., Collazo, R., & Ivanisevic, A. (2013). Erratum: “Kinase detection with gallium nitride based high electron mobility transistors” [Appl. Phys. Lett. 103, 013701 (2013)]. Applied Physics Letters, 103(8), 089902. https://doi.org/10.1063/1.4819200

Chichibu, S. F., Hazu, K., Ishikawa, Y., Tashiro, M., Ohtomo, T., Furusawa, K., … Sitar, Z. (2013). Excitonic emission dynamics in homoepitaxial AlN films studied using polarized and spatio-time-resolved cathodoluminescence measurements. APPLIED PHYSICS LETTERS, 103(14). https://doi.org/10.1063/1.4823826

Bryan, Z., Hoffmann, M., Tweedie, J., Kirste, R., Callsen, G., Bryan, I., … Collazo, R. (2013). Fermi Level Control of Point Defects During Growth of Mg-Doped GaN. JOURNAL OF ELECTRONIC MATERIALS, 42(5), 815–819. https://doi.org/10.1007/s11664-012-2342-9

Kirste, R., Hoffmann, M. P., Sachet, E., Bobea, M., Bryan, Z., Bryan, I., … Sitar, Z. (2013). Ge doped GaN with controllable high carrier concentration for plasmonic applications. Applied Physics Letters, 103(24), 242107. https://doi.org/10.1063/1.4848555

Makowski, M. S., Bryan, I., Sitar, Z., Arellano, C., Xie, J., Collazo, R., & Ivanisevic, A. (2013). Kinase detection with gallium nitride based high electron mobility transistors. Applied Physics Letters, 103(1), 013701. https://doi.org/10.1063/1.4812987

Xie, J., Mita, S., Bryan, Z., Guo, W., Hussey, L., Moody, B., … Sitar, Z. (2013). Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures. APPLIED PHYSICS LETTERS, 102(17). https://doi.org/10.1063/1.4803689

Makowski, M. S., Kim, S., Gaillard, M., Janes, D., Manfra, M. J., Bryan, I., … Ivanisevic, A. (2013). Physisorption of functionalized gold nanoparticles on AlGaN/GaN high electron mobility transistors for sensing applications. Applied Physics Letters, 102(7), 074102. https://doi.org/10.1063/1.4791788

Kirste, R., Mita, S., Hussey, L., Hoffmann, M. P., Guo, W., Bryan, I., … Sitar, Z. (2013). Polarity control and growth of lateral polarity structures in AlN. Applied Physics Letters, 102(18). https://doi.org/10.1063/1.4804575

Sochacki, T., Bryan, Z., Amilusik, M., Collazo, R., Lucznik, B., Weyher, J. L., … Sitar, Z. (2013). Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds. APPLIED PHYSICS EXPRESS, 6(7). https://doi.org/10.7567/apex.6.075504

Paisley, E. A., Craft, H. S., Losego, M. D., Lu, H., Gruverman, A., Collazo, R., … Maria, J.-P. (2013). Publisher's Note: “Epitaxial lead zirconate titanate on gallium nitride” [J. Appl. Phys. 113, 074107 (2013)]. Journal of Applied Physics, 114(23), 239901. https://doi.org/10.1063/1.4842135

Rigler, M., Zgonik, M., Hoffmann, M. P., Kirste, R., Bobea, M., Collazo, R., … Gerhold, M. (2013). Refractive index of III-metal-polar and N-polar AlGaN waveguides grown by metal organic chemical vapor deposition. APPLIED PHYSICS LETTERS, 102(22). https://doi.org/10.1063/1.4800554

Bryan, I., Rice, A., Hussey, L., Bryan, Z., Bobea, M., Mita, S., … Sitar, Z. (2013). Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition. APPLIED PHYSICS LETTERS, 102(6). https://doi.org/10.1063/1.4792694

Gaddy, B. E., Bryan, Z., Bryan, I., Kirste, R., Xie, J., Dalmau, R., … Irving, D. L. (2013). Vacancy compensation and related donor-acceptor pair recombination in bulk AlN. APPLIED PHYSICS LETTERS, 103(16). https://doi.org/10.1063/1.4824731

Bobea, M., Tweedie, J., Bryan, I., Bryan, Z., Rice, A., Dalmau, R., … Sitar, Z. (2013). X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN. JOURNAL OF APPLIED PHYSICS, 113(12). https://doi.org/10.1063/1.4798352

Railsback, J. G., Singh, A., Pearce, R. C., McKnight, T. E., Collazo, R., Sitar, Z., … Melechko, A. V. (2012). Gold Nanoparticles: Weakly Charged Cationic Nanoparticles Induce DNA Bending and Strand Separation (Adv. Mater. 31/2012). Advanced Materials, 24(31), 4221–4221. https://doi.org/10.1002/adma.201290188

Hussey, L., Mita, S., Xie, J., Guo, W., Akouala, C.-R., Rajan, J., … Sitar, Z. (2012). Lateral epitaxial overgrowth of nitrogen polar GaN on smooth nitrogen polar GaN templates by metalorganic chemical vapor deposition. JOURNAL OF APPLIED PHYSICS, 112(11). https://doi.org/10.1063/1.4768526

Collazo, R., Xie, J., Gaddy, B. E., Bryan, Z., Kirste, R., Hoffmann, M., … Sitar, Z. (2012). On the origin of the 265 nm absorption band in AlN bulk crystals. APPLIED PHYSICS LETTERS, 100(19). https://doi.org/10.1063/1.4717623

Neuschl, B., Thonke, K., Feneberg, M., Mita, S., Xie, J., Dalmau, R., … Sitar, Z. (2012). Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 249(3), 511–515. https://doi.org/10.1002/pssb.201100381

Callsen, G., Wagner, M. R., Kure, T., Reparaz, J. S., Buegler, M., Brunnmeier, J., … Sitar, Z. (2012). Optical signature of Mg-doped GaN: Transfer processes. PHYSICAL REVIEW B, 86(7). https://doi.org/10.1103/physrevb.86.075207

Tweedie, J., Collazo, R., Rice, A., Mita, S., Xie, J., Akouala, R.-C., & Sitar, Z. (2012). Schottky barrier and interface chemistry for Ni contacted to Al0.8Ga0.2N grown on c-oriented AlN single crystal substrates. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, Vol. 9, pp. 584–587. https://doi.org/10.1002/pssc.201100435

Nagashima, T., Kubota, Y., Kinoshita, T., Kumagai, Y., Xie, J., Collazo, R., … Sitar, Z. (2012). Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport. APPLIED PHYSICS EXPRESS, 5(12). https://doi.org/10.1143/apex.5.125501

Paisley, E. A., Shelton, T. C., Mita, S., Collazo, R., Christen, H. M., Sitar, Z., … Maria, J.-P. (2012). Surfactant assisted growth of MgO films on GaN. APPLIED PHYSICS LETTERS, 101(9). https://doi.org/10.1063/1.4748886

Railsback, J. G., Singh, A., Pearce, R. C., McKnight, T. E., Collazo, R., Sitar, Z., … Melechko, A. V. (2012). Weakly Charged Cationic Nanoparticles Induce DNA Bending and Strand Separation. ADVANCED MATERIALS, 24(31), 4261-+. https://doi.org/10.1002/adma.201104891

Collazo, R., Mita, S., Xie, J. Q., Rice, A., Tweedie, J., Dalmau, R., … Sitar, Z. (2011). 265 nm light emitting diodes on AlN single crystal substrates: Growth and characterization. 2011 Conference on Lasers and Electro-Optics (CLEO). https://doi.org/10.1364/cleo_si.2011.ctuu2

Dalmau, R., Moody, B., Xie, J., Collazo, R., & Sitar, Z. (2011). Characterization of dislocation arrays in AlN single crystals grown by PVT. Physica Status Solidi (a), 208(7), 1545–1547. https://doi.org/10.1002/pssa.201000957

Dalmau, R., Moody, B., Schlesser, R., Mita, S., Xie, J., Feneberg, M., … Sitar, Z. (2011). Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 158(5), H530–H535. https://doi.org/10.1149/1.3560527

Buegler, M., Gamage, S., Atalay, R., Wang, J., Senevirathna, M. K. I., Kirste, R., … Dietz, N. (2011). Growth temperature and growth rate dependency on reactor pressure for InN epilayers grown by HPCVD. Physica Status Solidi (c), 8(7-8), 2059–2062. https://doi.org/10.1002/pssc.201001067

Mita, S., Collazo, R., Rice, A., Tweedie, J., Xie, J., Dalmau, R., & Sitar, Z. (2011). Impact of gallium supersaturation on the growth of N-polar GaN. Physica Status Solidi (c), 8(7-8), 2078–2080. https://doi.org/10.1002/pssc.201001063

Xie, J., Mia, S., Dalmau, R., Collazo, R., Rice, A., Tweedie, J., & Sitar, Z. (2011). Ni/Au Schottky diodes on AlxGa1-xN (0.7<x<1) grown on AlN single crystal substrates. Physica Status Solidi (c), 8(7-8), 2407–2409. https://doi.org/10.1002/pssc.201001009

Acharya, A. R., Buegler, M., Atalay, R., Dietz, N., Thoms, B. D., Tweedie, J. S., & Collazo, R. (2011). Observation of NH2 species on tilted InN (01(1)over-bar1) facets. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 29(4). https://doi.org/10.1116/1.3596619

Xie, J., Mita, S., Hussey, L., Rice, A., Tweedie, J., LeBeau, J., … Sitar, Z. (2011). On the strain in n-type GaN. APPLIED PHYSICS LETTERS, 99(14). https://doi.org/10.1063/1.3647772

Collazo, R., Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., … Khan, A. (2011). Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, Vol. 8. https://doi.org/10.1002/pssc.201000964

Feneberg, M., Neuschl, B., Thonke, K., Collazo, R., Rice, A., Sitar, Z., … Goldhahn, R. (2011). Sharp bound and free exciton lines from homoepitaxial AlN. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 208(7), 1520–1522. https://doi.org/10.1002/pssa.201000947

Craft, H. S., Rice, A. L., Collazo, R., Sitar, Z., & Maria, J.-P. (2011). Spectroscopic measurements of the surface stoichiometry of chemical vapor deposited GaN. APPLIED PHYSICS LETTERS, 98(8). https://doi.org/10.1063/1.3554762

Xie, J., Mita, S., Rice, A., Tweedie, J., Hussey, L., Collazo, R., & Sitar, Z. (2011). Strain in Si doped GaN and the Fermi level effect. APPLIED PHYSICS LETTERS, 98(20). https://doi.org/10.1063/1.3589978

Paisley, E. A., Losego, M. D., Gaddy, B. E., Tweedie, J. S., Collazo, R., Sitar, Z., … Maria, J.-P. (2011). Surfactant-enabled epitaxy through control of growth mode with chemical boundary conditions. NATURE COMMUNICATIONS, 2. https://doi.org/10.1038/ncomms1470

Kirste, R., Collazo, R., Callsen, G., Wagner, M. R., Kure, T., Sebastian Reparaz, J., … Hoffmann, A. (2011). Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN. Journal of Applied Physics, 110(9), 093503. https://doi.org/10.1063/1.3656987

Losego, M. D., Craft, H. S., Paisley, E. A., Mita, S., Collazo, R., Sitar, Z., & Maria, J.-P. (2010). Critical examination of growth rate for magnesium oxide (MgO) thin films deposited by molecular beam epitaxy with a molecular oxygen flux. JOURNAL OF MATERIALS RESEARCH, 25(4), 670–679. https://doi.org/10.1557/jmr.2010.0096

Collazo, R., Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., & Sitar, Z. (2010, January). Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 207, pp. 45–48. https://doi.org/10.1002/pssa.200982629

Rice, A., Collazo, R., Tweedie, J., Xie, J., Mita, S., & Sitar, Z. (2010, April 1). Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1-xN (0 <= x <= 1) deposition by LP OMVPE. JOURNAL OF CRYSTAL GROWTH, Vol. 312, pp. 1321–1324. https://doi.org/10.1016/j.jcrysgro.2009.09.011

Kirste, R., Wagner, M. R., Schulze, J. H., Strittmatter, A., Collazo, R., Sitar, Z., … Hoffmann, A. (2010). Optical properties of InN grown on templates with controlled surface polarities. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 207(10), 2351–2354. https://doi.org/10.1002/pssa.201026086

Rice, A., Collazo, R., Tweedie, J., Dalmau, R., Mita, S., Xie, J., & Sitar, Z. (2010). Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition. Journal of Applied Physics, 108(4), 043510. https://doi.org/10.1063/1.3467522

Xie, J., Mita, S., Collazo, R., Rice, A., Tweedie, J., & Sitar, Z. (2010). The effect of N-polar GaN domains as Ohmic contacts. APPLIED PHYSICS LETTERS, 97(12). https://doi.org/10.1063/1.3491173

Tweedie, J., Collazo, R., Rice, A., Xie, J., Mita, S., Dalmau, R., & Sitar, Z. (2010). X-ray characterization of composition and relaxation of Al(x)Ga(1-x)N(0 <= x <= 1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy. JOURNAL OF APPLIED PHYSICS, 108(4). https://doi.org/10.1063/1.3457149

Losego, M. D., Fitting Kourkoutis, L., Mita, S., Craft, H. S., Muller, D. A., Collazo, R., … Maria, J.-P. (2009). Epitaxial Ba0.5Sr0.5TiO3–GaN heterostructures with abrupt interfaces. Journal of Crystal Growth, 311(4), 1106–1109. https://doi.org/10.1016/j.jcrysgro.2008.11.085

Mita, S., Collazo, R., & Sitar, Z. (2009, May 1). Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition. JOURNAL OF CRYSTAL GROWTH, Vol. 311, pp. 3044–3048. https://doi.org/10.1016/j.jcrysgro.2009.01.075

Lu, P., Collazo, R., Dalmau, R. F., Durkaya, G., Dietz, N., Raghothamachar, B., … Sitar, Z. (2009). Seeded growth of AlN bulk crystals in m- and c-orientation. JOURNAL OF CRYSTAL GROWTH, 312(1), 58–63. https://doi.org/10.1016/j.jcrysgro.2009.10.008

Ihlefeld, J. F., Losego, M. D., Collazo, R., Borland, W. J., & Maria, J.-P. (2008). Defect chemistry of nano-grained barium titanate films. JOURNAL OF MATERIALS SCIENCE, 43(1), 38–42. https://doi.org/10.1007/s10853-007-2135-3

Lu, P., Collazo, R., Dalmau, R. F., Durkaya, G., Dietz, N., & Sitar, Z. (2008). Different optical absorption edges in AlN bulk crystals grown in m- and c-orientations. APPLIED PHYSICS LETTERS, 93(13). https://doi.org/10.1063/1.2996413

Liu, F., Collazo, R., Mita, S., Sitar, Z., Pennycook, S. J., & Duscher, G. (2008). Direct Observation of Inversion Domain Boundaries of GaN onc-Sapphire at Sub-ångstrom Resolution. Advanced Materials, 20(11), 2162–2165. https://doi.org/10.1002/adma.200702522

Losego, M. D., Mita, S., Collazo, R., Sitar, Z., & Maria, J.-P. (2008). Epitaxial growth of the metastable phase ytterbium monoxide on gallium nitride surfaces. JOURNAL OF CRYSTAL GROWTH, 310(1), 51–56. https://doi.org/10.1016/j.jcrysgro.2007.10.002

Collazo, R., Mita, S., Rice, A., Dalmau, R., Wellenius, P., Muth, J., & Sitar, Z. (2008). Fabrication of a GaN p/n lateral polarity junction by polar doping selectivity. Physica Status Solidi (c), 5(6), 1977–1979. https://doi.org/10.1002/pssc.200778624

Mita, S., Collazo, R., Rice, A., Dalmau, R. F., & Sitar, Z. (2008). Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition. JOURNAL OF APPLIED PHYSICS, 104(1). https://doi.org/10.1063/1.2952027

Craft, H. S., Collazo, R., Losego, M. D., Mita, S., Sitar, Z., & Maria, J.-P. (2008). Spectroscopic analysis of the epitaxial CaO (111)-GaN (0002) interface. APPLIED PHYSICS LETTERS, 92(8). https://doi.org/10.1063/1.2887878

Craft, H. S., Collazo, R., Losego, M. D., Sitar, Z., & Maria, J.-P. (2008). Surface water reactivity of polycrystalline MgO and CaO films investigated using x-ray photoelectron spectroscopy. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 26(6), 1507–1510. https://doi.org/10.1116/1.3000058

Dietz, N., Alevli, M., Atalay, R., Durkaya, G., Collazo, R., Tweedie, J., … Sitar, Z. (2008). The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition. APPLIED PHYSICS LETTERS, 92(4). https://doi.org/10.1063/1.2840192

Liu, F. D., Collazo, R., Mita, S., Sitar, Z., & Duscher, G. (2008). Three-dimensional geometry of nanometer-scale AlN pits: A new template for quantum dots? Advanced Materials, 20(1), 134-. https://doi.org/10.1002/adma.200701288

Craft, H. S., Collazo, R., Losego, M. D., Mita, S., Sitar, Z., & Maria, J.-P. (2007). Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy. JOURNAL OF APPLIED PHYSICS, 102(7). https://doi.org/10.1063/1.2785022

Losego, M. D., Mita, S., Collazo, R., Sitar, Z., & Maria, J.-P. (2007). Epitaxial calcium oxide films deposited on gallium nitride surfaces. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 25, pp. 1029–1032. https://doi.org/10.1116/1.2710243

Mita, S., Collazo, R., Dalmau, R., & Sitar, Z. (2007). Growth of highly resistive Ga-polar GaN by LP-MOVPE. Physica Status Solidi (c), 4(7), 2260–2263. https://doi.org/10.1002/pssc.200674837

Collazo, R., Mita, S., Dalmau, R., & Sitar, Z. (2007). Impact of polarity control and related defects on the electrical properties of GaN grown by MOVPE. Physica Status Solidi (c), 4(7), 2597–2600. https://doi.org/10.1002/pssc.200674874

Collazo, R., Mita, S., Rice, A., Dalmau, R. F., & Sitar, Z. (2007). Simultaneous growth of a GaN p/n lateral polarity junction by polar selective doping. APPLIED PHYSICS LETTERS, 91(21). https://doi.org/10.1063/1.2816893

Liu, F., Collazo, R., Mita, S., Sitar, Z., Duscher, G., & Pennycook, S. J. (2007). The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence. APPLIED PHYSICS LETTERS, 91(20). https://doi.org/10.1063/1.2815748

Dalmau, R., Collazo, R., Mita, S., & Sitar, Z. (2007). X-ray photoelectron spectroscopy characterization of aluminum nitride surface oxides: Thermal and hydrothermal evolution. Journal of Electronic Materials, 36(4), 414–419. https://doi.org/10.1007/s11664-006-0044-x

Govindaraju, N., Aleksov, A., Li, X., Okuzumi, F., Wolter, S. D., Collazo, R., … Sitar, Z. (2006). Comparative study of textured diamond films by thermal conductivity measurements. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 85(3), 331–335. https://doi.org/10.1007/s00339-006-3697-7

Aleksov, A., Collazo, R., Mita, S., Schlesser, R., & Sitar, Z. (2006). Current-voltage characteristics of n/n lateral polarity junctions in GaN. APPLIED PHYSICS LETTERS, 89(5). https://doi.org/10.1063/1.2244046

Collazo, R., Mita, S., Aleksov, A., Schlesser, R., & Sitar, Z. (2006, January 25). Growth of Ga- and N- polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers. JOURNAL OF CRYSTAL GROWTH, Vol. 287, pp. 586–590. https://doi.org/10.1016/j.jcrysgro.2005.10.080

Li, X., Perkins, J., Collazo, R., Nemanich, R. J., & Sitar, Z. (2006). Investigation of the effect of the total pressure and methane concentration on the growth rate and quality of diamond thin films grown by MPCVD. DIAMOND AND RELATED MATERIALS, Vol. 15, pp. 1784–1788. https://doi.org/10.1016/j.diamond.2006.09.008

Craft, H. S., Ihlefeld, J. F., Losego, M. D., Collazo, R., Sitar, Z., & Maria, J.-P. (2006). MgO epitaxy on GaN (0002) surfaces by molecular beam epitaxy. APPLIED PHYSICS LETTERS, 88(21). https://doi.org/10.1063/1.2201041

Craft, H. S., Collazo, R., Sitar, Z., & Maria, J. P. (2006). Molecular beam epitaxy of Sm2O3, Dy2O3, and Ho2O3 on Si (111). JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 24, pp. 2105–2110. https://doi.org/10.1116/1.2216721

Herro, Z. G., Zhuang, D., Schlesser, R., Collazo, R., & Sitar, Z. (2006). Seeded growth of AlN on N- and Al-polar < 0 0 0 1 > AlN seeds by physical vapor transport. JOURNAL OF CRYSTAL GROWTH, 286(2), 205–208. https://doi.org/10.1016/j.jcrysgro.2005.10.074

Schlesser, R., Dalmau, R., Zhuang, D., Collazo, R., & Sitar, Z. (2005, July 15). Crucible materials for growth of aluminum nitride crystals. JOURNAL OF CRYSTAL GROWTH, Vol. 281, pp. 75–80. https://doi.org/10.1016/j.jcrysgro.2005.03.014

Collazo, R., Mita, S., Schlesser, R., & Sitar, Z. (2005). Polarity control of GaN thin films grown by metalorganic vapor phase epitaxy. Physica Status Solidi (c), 2(7), 2117–2120. https://doi.org/10.1002/pssc.200461546

Brenner, D. W., Schlesser, R., Sitar, Z., Dalmau, R., Collazo, R., & Li, Y. (2004). Model for the influence of boron impurities on the morphology of AIN grown by physical vapor transport. SURFACE SCIENCE, 560(1-3), L202–L206. https://doi.org/10.1016/j.susc.2004.05.003

Chang, C. S., Chattopadhyay, S., Chen, L. C., Chen, K. H., Chen, C. W., Chen, Y. F., … Sitar, Z. (2003). Band-gap dependence of field emission from one-dimensional nanostructures grown on n-type and p-type silicon substrates. PHYSICAL REVIEW B, 68(12). https://doi.org/10.1103/physrevb.68.125322

Collazo, R., Schlesser, R., Roskowski, A., Miraglia, P., Davis, R. F., & Sitar, Z. (2003). Electron energy distribution during high-field transport in AlN. JOURNAL OF APPLIED PHYSICS, 93(5), 2765–2771. https://doi.org/10.1063/1.1543633

Wolter, S. D., Borca-Tasciuc, D. A., Chen, G., Govindaraju, N., Collazo, R., Okuzumi, F., … Sitar, Z. (2003). Thermal conductivity of epitaxially textured diamond films. DIAMOND AND RELATED MATERIALS, 12(1), 61–64. https://doi.org/10.1016/S0925-9635(02)00248-0

Collazo, R., Schlesser, R., & Sitar, Z. (2002). Experimental observation of electron velocity overshoot in AlN. APPLIED PHYSICS LETTERS, 81(27), 5189–5191. https://doi.org/10.1063/1.1534407

Collazo, R., Schlesser, R., & Sitar, Z. (2002). Role of adsorbates in field emission from nanotubes. DIAMOND AND RELATED MATERIALS, Vol. 11, pp. 769–773. https://doi.org/10.1016/S0925-9635(01)00585-4

Yushin, G. N., Wolter, S. D., Kvit, A. V., Collazo, R., Stoner, B. R., Prater, J. T., & Sitar, Z. (2002). Study of fusion bonding of diamond to silicon for silicon-on-diamond technology. APPLIED PHYSICS LETTERS, 81(17), 3275–3277. https://doi.org/10.1063/1.1516636

Collazo, R., Schlesser, R., & Sitar, Z. (2001). Two field-emission states of single-walled carbon nanotubes. APPLIED PHYSICS LETTERS, 78(14), 2058–2060. https://doi.org/10.1063/1.1361089

Schlesser, R., Collazo, R., Bower, C., Zhou, O., & Sitar, Z. (2000). Energy distribution of field emitted electrons from carbon nanotubes. DIAMOND AND RELATED MATERIALS, Vol. 9, pp. 1201–1204. https://doi.org/10.1016/s0925-9635(99)00277-0

Collazo, R., Schlesser, R., Roskowski, A., Davis, R. F., & Sitar, Z. (2000). Hot electron transport in AlN. JOURNAL OF APPLIED PHYSICS, 88(10), 5865–5869. https://doi.org/10.1063/1.1318386

Hoffmann, M. P., Gerhold, M., Kirste, R., Rice, A., Akouala, C. R., Xie, J. Q. Q., … Sitar, Z. Fabrication and characterization of lateral polar GaN structures for second harmonic generation. Quantum sensing and nanophotonic devices x, 8631.

Collazo, R., Schlesser, R., & Sitar, Z. Field emission from carbon nanotubes. New Diamond and Frontier Carbon Technology, 13(5), 297–306.

Seidlitz, D., Fali, A., Kankanamge, I. S. M., Alden, D., Collazo, R., Hoffmann, A., … Abate, Y. Infrared nanoscopy of In-rich InGaN epilayers (Conference Presentation). Fifteenth international conference on solid state lighting and led-based illumination systems, 9954.

Guo, W., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., Collazo, R., & Sitar, Z. Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes. Journal of Applied Physics, 117(11).

Alden, D., Bryan, Z., Gaddy, B. E., Bryan, I., Callsen, G., Koukitu, A., … Collazo, R. On the origin of the 4.7 eV absorption and 2.8 eV emission bands in bulk AlN substrates. Wide bandgap semiconductor materials and devices 17, 72(5), 31–40.

Hoffmann, M. P., Tweedie, J., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., … Collazo, R. Point defect management in GaN by Fermi-level control during growth. Gallium nitride materials and devices ix, 8986.

Tsao, J. Y., Chowdhury, S., Hollis, M. A., Jena, D., Johnson, N. M., Jones, K. A., … Grotjohn, T. A. [Review of Ultrawide-bandgap semiconductors: Research opportunities and challenges]. Advanced Electronic Materials, 4(1).

Tsao, J. Y., Chowdhury, S., Hollis, M. A., Jena, D., Johnson, N. M., Jones, K. A., … Grotjohn, T. A. [Review of Ultrawide-bandgap semiconductors: Research opportunities and challenges]. Advanced Electronic Materials, 4(1).