Ryan Schimizzi

Works (2)

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2012 journal article

A Simplified Physical Model of RF Channel Breakdown in AlGaN/GaN HFETs

IEEE TRANSACTIONS ON ELECTRON DEVICES, 59(11), 2973–2978.

By: R. Schimizzi, R. Trew & G. Bilbro

author keywords: Avalanche breakdown; impact ionization; microwave FET amplifiers; semiconductor device modeling
Source: Web Of Science
Added: August 6, 2018

2012 conference paper

Large-signal FET Models and a New AlGaN/GaN HFET model for power amplifier design

2012 IEEE International Conference on Wireless Information Technology and Systems (ICWITS).

By: R. Trew, D. Hou, R. Schimizzi, A. Goswami & G. Bilbro

Source: NC State University Libraries
Added: August 6, 2018