2012 journal article
A Simplified physical model of RF channel breakdown in AlGaN/GaN HFETs
IEEE Transactions on Electron Devices, 59(11), 2973–2978.
By: R. Schimizzi, R. Trew & G. Bilbro
2012 conference paper
Large-signal FET Models and a New AlGaN/GaN HFET model for power amplifier design
2012 IEEE International Conference on Wireless Information Technology and Systems (ICWITS).
By: R. Trew, D. Hou, R. Schimizzi, A. Goswami & G. Bilbro