2012 journal article

A Simplified physical model of RF channel breakdown in AlGaN/GaN HFETs

IEEE Transactions on Electron Devices, 59(11), 2973–2978.

By: R. Schimizzi, R. Trew & G. Bilbro

Source: NC State University Libraries
Added: August 6, 2018

2012 conference paper

Large-signal FET Models and a New AlGaN/GaN HFET model for power amplifier design

2012 IEEE International Conference on Wireless Information Technology and Systems (ICWITS).

By: R. Trew, D. Hou, R. Schimizzi, A. Goswami & G. Bilbro

Source: NC State University Libraries
Added: August 6, 2018