Ryan Schimizzi

Works (2)

Updated: July 5th, 2023 15:45

2012 article

A Simplified Physical Model of RF Channel Breakdown in AlGaN/GaN HFETs

Schimizzi, R. D., Trew, R. J., & Bilbro, G. L. (2012, August 20). IEEE Transactions on Electron Devices.

By: R. Schimizzi n, R. Trew n & G. Bilbro n

author keywords: Avalanche breakdown; impact ionization; microwave FET amplifiers; semiconductor device modeling
topics (OpenAlex): GaN-based semiconductor devices and materials; Silicon Carbide Semiconductor Technologies; Semiconductor materials and devices
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Source: Web Of Science
Added: August 6, 2018

2012 article

Large-signal FET models and a new AlGaN/GaN HFET model for power amplifier design

Trew, R. J., Hou, D., Schimizzi, R., Goswami, A., & Bilbro, G. L. (2012, November 1).

By: R. Trew n, D. Hou n, R. Schimizzi n, A. Goswami n & G. Bilbro n

topics (OpenAlex): GaN-based semiconductor devices and materials; Radio Frequency Integrated Circuit Design; Silicon Carbide Semiconductor Technologies
Source: NC State University Libraries
Added: August 6, 2018

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