2012 journal article

A Simplified Physical Model of RF Channel Breakdown in AlGaN/GaN HFETs


By: R. Schimizzi n, R. Trew n & G. Bilbro n

author keywords: Avalanche breakdown; impact ionization; microwave FET amplifiers; semiconductor device modeling
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2012 conference paper

Large-signal FET Models and a New AlGaN/GaN HFET model for power amplifier design

2012 IEEE International Conference on Wireless Information Technology and Systems (ICWITS).

By: R. Trew n, D. Hou n, R. Schimizzi n, A. Goswami n & G. Bilbro n

Source: NC State University Libraries
Added: August 6, 2018

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