Ryan Schimizzi

Works (2)

Updated: July 5th, 2023 15:45

2012 journal article

A Simplified Physical Model of RF Channel Breakdown in AlGaN/GaN HFETs

IEEE TRANSACTIONS ON ELECTRON DEVICES, 59(11), 2973–2978.

By: R. Schimizzi n, R. Trew n & G. Bilbro n

author keywords: Avalanche breakdown; impact ionization; microwave FET amplifiers; semiconductor device modeling
topics (OpenAlex): GaN-based semiconductor devices and materials; Silicon Carbide Semiconductor Technologies; Semiconductor materials and devices
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Source: Web Of Science
Added: August 6, 2018

2012 conference paper

Large-signal FET Models and a New AlGaN/GaN HFET model for power amplifier design

2012 IEEE International Conference on Wireless Information Technology and Systems (ICWITS).

By: R. Trew n, D. Hou n, R. Schimizzi n, A. Goswami n & G. Bilbro n

topics (OpenAlex): GaN-based semiconductor devices and materials; Radio Frequency Integrated Circuit Design; Silicon Carbide Semiconductor Technologies
Source: NC State University Libraries
Added: August 6, 2018

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