Works (268)

Updated: July 5th, 2023 16:04

2015 journal article

Band alignment at AlN/Si (111) and (001) interfaces

JOURNAL OF APPLIED PHYSICS, 118(4).

By: S. King n, R. Nemanich n & R. Davis n

Source: Web Of Science
Added: August 6, 2018

2015 journal article

Cleaning of pyrolytic hexagonal boron nitride surfaces

SURFACE AND INTERFACE ANALYSIS, 47(7), 798–803.

By: S. King n, R. Nemanich n & R. Davis n

author keywords: boron nitride; surface cleaning; XPS; 2D materials; h-BN
Source: Web Of Science
Added: August 6, 2018

2015 journal article

Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 33(5).

By: S. King n, S. Tanaka n, R. Davis n & R. Nemanich n

UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

2015 journal article

Hydrogen desorption kinetics for aqueous hydrogen fluoride and remote hydrogen plasma processed silicon (001) surfaces

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 33(5).

By: S. King n, R. Davis n, R. Carter n, T. Schneider n & R. Nemanich n

Source: Web Of Science
Added: August 6, 2018

2015 journal article

Photoemission investigation of the Schottky barrier at the Sc/3C-SiC (111) interface

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 252(2), 391–396.

By: S. King n, R. Nemanich n & R. Davis n

author keywords: scandium; silicon carbide; Schottky barrier; XPS
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

2014 journal article

Desorption and sublimation kinetics for fluorinated aluminum nitride surfaces

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 32(5).

By: S. King n, R. Davis n & R. Nemanich n

UN Sustainable Development Goal Categories
13. Climate Action (Web of Science)
Source: Web Of Science
Added: August 6, 2018

2014 journal article

Gas source molecular beam epitaxy of scandium nitride on silicon carbide and gallium nitride surfaces

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 32(6).

By: S. King n, R. Davis n & R. Nemanich n

UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

2014 journal article

Valence and conduction band alignment at ScN interfaces with 3C-SiC (111) and 2H-GaN (0001)

APPLIED PHYSICS LETTERS, 105(8).

By: S. King n, R. Nemanich n & R. Davis n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2010 journal article

Surface and defect microstructure of GaN and AlN layers grown on hydrogen-etched 6H-SiC(0001) substrates

Acta Materialia, 58(6), 2165–2175.

By: Z. Reitmeier, S. Einfeldt, R. Davis, X. Zhang, X. Fang & S. Mahajan

Source: NC State University Libraries
Added: August 6, 2018

2009 journal article

On the origin of aluminum-related cathodoluminescence emissions from sublimation grown 4H-SiC(11(2)over-bar0)

APPLIED SURFACE SCIENCE, 255(13-14), 6535–6539.

By: S. Bishop n, C. Reynolds n, J. Molstad*, F. Stevie n, D. Barnhardt n & R. Davis*

author keywords: 4H-SiC; Chemical vapor deposition processes-hot wall epitaxy and sublimation epitaxy; Interfacial impurities; Cathodoluminescence; Secondary ion mass spectrometry; Impurity luminescence
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

2009 journal article

Sequential growths of AlN and GaN layers on as-polished 6H-SiC(0001) substrates

ACTA MATERIALIA, 57(14), 4001–4008.

By: Z. Reitmeier*, S. Einfeldt*, R. Davis*, X. Zhang*, X. Fang* & S. Mahajan*

author keywords: Group III nitrides; Dislocations; Epitaxy; Heteroepitaxy; Electron microscopy
UN Sustainable Development Goal Categories
14. Life Below Water (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2008 journal article

Kinetics of Ga and In desorption from (7x7)Si(111) and (3x3)6H-SiC(0001) surfaces

SURFACE SCIENCE, 602(2), 405–415.

By: S. King n, R. Davis n & R. Nemanich n

author keywords: silicon carbide; gallium; indium; temperature programmed desorption; kinetics
Source: Web Of Science
Added: August 6, 2018

2008 patent

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Washington, DC: U.S. Patent and Trademark Office.

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Sublimation growth of an in-situ-deposited layer in SiC chemical vapor deposition on 4H-SiC(1 1 (2)over-bar 0)

JOURNAL OF CRYSTAL GROWTH, 311(1), 72–78.

By: S. Bishop n, C. Reynolds n, Z. Liliental-Weber*, Y. Uprety*, C. Ebert*, F. Stevie n, J. Park n, R. Davis*

author keywords: Characterization; Chemical vapor deposition processes; Hot-wall epitaxy; Silicon carbide; Semiconducting materials
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

2007 article

Characterization of growth defects in thin GaN layers with X-ray microbeam

Barabash, R. I., Ice, G. E., Roder, C., Budai, J., Liu, W., Figge, S., … Davis, R. F. (2007, May). PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 244, pp. 1735–1742.

By: R. Barabash*, G. Ice*, C. Roder*, J. Budai*, W. Liu*, S. Figge*, S. Einfeldt*, D. Hommel*, R. Davis n

Source: Web Of Science
Added: August 6, 2018

2007 journal article

Electrical and optical properties of ZnO (000(1)over-bar) wafers implanted with argon

Journal of Applied Physics, 101(2).

By: B. Adekore, R. Davis & D. Barlage

Source: NC State University Libraries
Added: August 6, 2018

2007 article

Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H-SiC (11(2)over-bar0)

Bishop, S. M., Park, J.-S., Gu, J., Wagner, B. P., Reltmeier, Z. J., Batchelor, D. A., … Davis, R. F. (2007, March 1). JOURNAL OF CRYSTAL GROWTH, Vol. 300, pp. 83–89.

By: S. Bishop n, J. Park n, J. Gu*, B. Wagner n, Z. Reltmeier, D. Batchelor n, D. Zakharov*, Z. Liliental-Weber*, R. Davis n

author keywords: atomic force microscopy; crystal morphology; surfaces; metalorganic chemical vapor deposition; pendeo-epitaxy; nitrides; semiconducting III-V materials
UN Sustainable Development Goal Categories
14. Life Below Water (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2007 patent

Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches

Washington, DC: U.S. Patent and Trademark Office.

By: T. Zheleva, D. Thomson, S. Smith, K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Nitrogen acceptors in bulk ZnO (000(1)over-bar)) substrates and homoepitaxial ZnO films

JOURNAL OF APPLIED PHYSICS, 102(2).

By: B. Adekore n, J. Pierce n, R. Davisb, D. Barlage n & J. Muth n

Source: Web Of Science
Added: August 6, 2018

2007 patent

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

By: T. Gehrke, K. Linthicum & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Phonon-assisted stimulated emission from pendeoepitaxy GaN stripes grown on 6H-SiC substrates

Applied Physics Letters, 91(5).

By: Y. Chang, Y. Li, D. Thomson & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2006 journal article

Characterization of crystallographic properties and defects via X-ray microdiffraction in GaN (0001) layers

Physica Status Solidi. A, Applications and Materials Science, 203(1), 142–148.

By: R. Barabash, O. Barabash, G. Ice, C. Roder, S. Figge & S. Einfeldt

Source: NC State University Libraries
Added: August 6, 2018

2006 journal article

Effect of thermal annealing on the metastable optical properties of GaN thin films

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 24(4), 1051–1054.

By: Y. Chang*, R. Kolbas*, Z. Reitmeier* & R. Davis*

UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2006 journal article

Growth and characterization of pendeo-epitaxial GaN(11(2)over-bar0) on 4H-SiC(11(2)over-bar0) substrates

JOURNAL OF CRYSTAL GROWTH, 290(2), 504–512.

By: B. Wagner*, Z. Reitmeier*, J. Park*, D. Bachelor*, D. Zakharov, Z. Liliental-Weber, R. Davis*

author keywords: atomic force microscopy; crystal morphology; surfaces; metalorganic chemical vapor deposition; pendeo-epitaxy; nitrides; semiconducting III-V materials
Source: Web Of Science
Added: August 6, 2018

2006 journal article

Growth and fabrication of AlGaN-based ultraviolet light emitting diodes on 6H-SiC(0001) substrates and the effect of carrier-blocking layers on their emission characteristics

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 127(2-3), 169–179.

By: J. Park n, Z. Reitmeier n, D. Fothergill n, X. Zhang n, J. Muth n & R. Davis n

author keywords: light emitting diodes; ultraviolet; AlGaN; carrier-blocking layers
Source: Web Of Science
Added: August 6, 2018

2006 journal article

Growth and structural investigations of epitaxial hexagonal YMnO3 thin films deposited on wurtzite GaN(001) substrates

THIN SOLID FILMS, 515(4), 1807–1813.

By: K. Balasubramanian*, K. Chang*, F. Mohammad*, L. Porter*, P. Salvador*, J. DiMaio n, R. Davis n

author keywords: epitaxy; heterostructures; laser ablation; transmission electron microscopy; X-ray diffraction; yttrium manganese oxide; gallium nitride; oxides
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

2006 article

Mapping misorientation and crystallographic tilt in GaN layers via polychromatic microdiffraction

Barabash, R. I., Ice, G. E., Liu, W., Roder, C., Figge, S., Einfeldt, S., … Davis, R. F. (2006, June). PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 243, pp. 1508–1513.

By: R. Barabash*, G. Ice*, W. Liu*, C. Roder*, S. Figge*, S. Einfeldt*, D. Hommel*, T. Katona* ...

Source: Web Of Science
Added: August 6, 2018

2006 patent

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2006 journal article

Origins of parasitic emissions from 353 nm AlGaN-based ultraviolet light emitting diodes over SiC substrates

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45(5A), 4083–4086.

author keywords: light emitting diode; ultraviolet; parasitic emission; AlGaN; carrier blocking layer
Source: Web Of Science
Added: August 6, 2018

2005 journal article

A printable form of single-crystalline gallium nitride for flexible optoelectronic systems

Small (Weinheim An Der Bergstrasse, Germany), 1(12), 1164–1168.

By: K. Lee, J. Lee, H. Hwang, Z. Reitmeier, R. Davis, J. Rogers, R. Nuzzo

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Effect of carrier blocking layers on the emission characteristics of AlGaN-based ultraviolet light emitting diodes

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(10), 7254–7259.

By: J. Park n, D. Fothergill n, X. Zhang n, Z. Reitmeier n, J. Muth n & R. Davis n

author keywords: light emitting diode; ultraviolet; AlGaN; carrier blocking layer; quantum well
Source: Web Of Science
Added: August 6, 2018

2005 journal article

Growth of dense ZnO films via MOVPE on GaN(0001) epilayers using a low/high-temperature sequence

JOURNAL OF CRYSTAL GROWTH, 277(1-4), 345–351.

By: J. Pierce n, B. Adekore n, R. Davis n & F. Stevie n

author keywords: crystal morphology; impurities; X-ray diffraction; organometallic vapor phase deposition; ZnO
Source: Web Of Science
Added: August 6, 2018

2005 journal article

Homoepitaxial growth of dense ZnO(0001) and ZnO (1120) films via MOVPE on selected ZnO substrates

Journal of Crystal Growth, 283(02-Jan), 147–155.

By: J. Pierce, B. Adekore, R. Davis & F. Stevie

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Intersecting basal plane and prismatic stacking fault structures and their formation mechanisms in GaN

Journal of Applied Physics, 98(6).

By: J. Bai, X. Huang, M. Dudley, B. Wagner, R. Davis, L. Wu, E. Sutter, Y. Zhu, B. Skromme

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Local strain, defects, and crystallographic tilt in GaN(0001) layers grown by maskless pendeo-epitaxy from x-ray microdiffraction

Journal of Applied Physics, 97(1).

By: R. Barabash, G. Ice, W. Liu, S. Einfeldt, A. Roskowski & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2005 patent

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

On the microstructure of AlxGa1-xN layers grown on 6H-SiC(0001) substrates

Journal of Applied Physics, 97(8).

By: R. Kroger, S. Einfeldt, R. Chierchia, D. Hommel, Z. Reitmeier, R. Davis, Q. Liu

Source: NC State University Libraries
Added: August 6, 2018

2005 article

P-type doping utilizing nitrogen and Mn doping of ZnO using MOCVD for ultraviolet lasers and spintronic applications

Egerton, E. J., Sood, A. K., Singh, R., Puri, Y. R., Davis, R. F., Pierce, J., … Steiner, T. (2005, June). JOURNAL OF ELECTRONIC MATERIALS, Vol. 34, pp. 949–952.

By: E. Egerton*, A. Sood*, R. Singh*, Y. Puri*, R. Davis n, J. Pierce n, D. Look*, T. Steiner*

author keywords: ZnO; p-type; doping
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2005 journal article

Photo-electron emission and atomic force microscopies of the hydrogen etched 6H-SiC(0001) surface and the initial growth of GaN and AlN

APPLIED SURFACE SCIENCE, 242(3-4), 428–436.

By: J. Hartman n, K. Naniwae n, C. Petrich n, R. Nemanich n & R. Davis n

author keywords: photo-emission electron microscopy; gallium nitride; aluminum nitride; silicon carbide; molecular beam epitaxy; stepped single crystal surfaces
Source: Web Of Science
Added: August 6, 2018

2005 journal article

Preparation and characterization of atomically clean, stoichlometric surfaces of AIN(0001)

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 23(1), 72–77.

Source: Web Of Science
Added: August 6, 2018

2005 patent

Second gallium nitride layers that extend into trenches in first gallium nitride layers

Washington, DC: U.S. Patent and Trademark Office.

By: T. Zheleva, D. Thomson, S. Smith, K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Step-controlled strain relaxation in the vicinal surface epitaxy of nitrides

Physical Review Letters, 95(8).

By: X. Huang, J. Bai, M. Dudley, B. Wagner, R. Davis & Y. Zhu

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Structural TEM study of nonpolar a-plane gallium nitride grown on (1120) 4H-SiC by organometallic vapor phase epitaxy

Physical Review. B, Condensed Matter and Materials Physics, 71(23).

By: D. Zakharov, Z. Liliental-Weber, B. Wagner, Z. Reitmeier, E. Preble & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Structural defects and luminescence features in heteroepitaxial GaN grown on on-axis and misoriented substrates

Journal of Applied Physics, 97(11).

By: J. Bai, M. Dudley, L. Chen, B. Skromme, B. Wagner, R. Davis, U. Chowdhury, R. Dupuis

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Structural, microstructural, and electrical properties of gold films and Schottky contacts on remote plasma-cleaned, n-type ZnO{0001} surfaces

JOURNAL OF APPLIED PHYSICS, 97(10).

Source: Web Of Science
Added: August 6, 2018

2005 journal article

The effects of oxygen, nitrogen, and hydrogen annealing on Mg acceptors in GaN as monitored by electron paramagnetic resonance spectroscopy

JOURNAL OF ELECTRONIC MATERIALS, 34(1), 34–39.

By: D. Matlock*, M. Zvanut*, H. Wang*, . Dimaio n, R. Davis n, J. Van Nostrand*, R. Henry*, D. Koleske*, A. Wickenden*

author keywords: electron paramagnetic resonance (EPR); Mg doped; GaN; annealing; hydrogen; oxygen
Source: Web Of Science
Added: August 6, 2018

2005 journal article

The formation of epitaxial hexagonal boron nitride on nickel substrates

JOURNAL OF ELECTRONIC MATERIALS, 34(12), 1558–1564.

By: P. Yang*, J. Prater*, W. Liu, J. Glass* & R. Davis n

author keywords: boron nitride (BN); epitaxial; precipitation
Source: Web Of Science
Added: August 6, 2018

2005 journal article

White X-ray microbeam analysis of strain and crystallographic tilt in GaN layers grown by maskless pendeoepitaxy

Physica Status Solidi. A, Applications and Materials Science, 202(5), 732–738.

By: R. Barabash, G. Ice, W. Liu, S. Einfeldt, D. Hommel, A. Roskowski, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Growth and characterization of ZnO thin films on GaN epilayers

JOURNAL OF ELECTRONIC MATERIALS, 33(7), 826–832.

By: T. Smith n, H. McLean*, D. Smith n, P. Miraglia n, A. Roskowski n & R. Davis n

author keywords: zinc oxide (ZnO); thin film; metalorganic vapor phase epitaxy; thermal expansion; interfacial oxide; transmission electron microscopy; stacking faults; threading dislocations
UN Sustainable Development Goal Categories
14. Life Below Water (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2004 chapter

Growth of homoepitaxial films on 4H-SiC(1120) and 8 degrees off-axis 4H-SiC(0001) substrates and their characterization

In J. C. R. Madar & E. Blanquet (Eds.), Silicon carbide and related materials 2003: ICSCRM2003: Proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003 (Vol. 457-460, pp. 221–224). Utikon-Zurich, Switzerland: Trans Tech Publications.

By: S. Bishop, E. Preble, C. Hallin, A. Henry, L. Storasta, H. Jacobson, B. Wagner, Z. Reitmeier, E. Janzen, R. Davis

Ed(s): J. R. Madar & E. Blanquet

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

HVPE-GaN: comparison of emission properties and microstructure of films grown on different laterally overgrown templates

Diamond and Related Materials, 13(4-8), 1125–1129.

By: T. Paskova*, E. Valcheva*, P. Paskov*, B. Monemar, A. Roskowski n, R. Davis n, B. Beaumont, P. Gibart

author keywords: GaN quasi-substrates; microstructure; emission distribution; TEM; CL
Sources: Web Of Science, Crossref
Added: August 6, 2018

2004 journal article

Homoepitaxial growth of (0001)- and (000(1)over-bar)-oriented ZnO thin films via metalorganic vapor-phase epitaxy and their characterization

JOURNAL OF CRYSTAL GROWTH, 265(3-4), 390–398.

By: T. Smith n, H. McLean n, D. Smith* & R. Davis n

author keywords: crystal morphology; dislocations; stacking faults; X-ray diffraction; organometallic vapor phase deposition; ZnO
Source: Web Of Science
Added: August 6, 2018

2004 journal article

In situ cleaning and characterization of oxygen- and zinc-terminated, n-type, ZnO{0001} surfaces

JOURNAL OF APPLIED PHYSICS, 95(10), 5856–5864.

Source: Web Of Science
Added: August 6, 2018

2004 journal article

In situ cleaning of GaN(0001) surfaces in a metalorganic vapor phase epitaxy environment

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 22(5), 2077–2082.

By: Z. Reitmeier, J. Park, W. Mecouch & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2004 patent

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

By: T. Gehrke, K. Linthicum & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Selective etching of GaN from AlGaN/GaN and AlN/GaN structures

MRS Internet Journal of Nitride Semiconductor Research, 9(5).

By: J. Grenko n, C. Reynolds n, R. Schlesser n, K. Bachmann n, Z. Rietmeier n, R. Davis n, Z. Sitar n

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Surface-roughness correlations in homoepitaxial growth of GaN(0001) films by NH3 supersonic jet epitaxy

JOURNAL OF APPLIED PHYSICS, 96(8), 4556–4562.

By: N. Smith n, H. Lamb n, A. McGinnis n & R. Davis n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2003 journal article

Band offset measurements of the GaN (0001)/HfO2 interface

Journal of Applied Physics, 94(11), 7155–7158.

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Band offset measurements of the Si3N4/GaN (0001) interface

JOURNAL OF APPLIED PHYSICS, 94(6), 3949–3954.

By: T. Cook n, C. Fulton n, W. Mecouch n, R. Davis n, G. Lucovsky n & R. Nemanich n

Source: Web Of Science
Added: August 6, 2018

2003 journal article

Characterization of hydrogen etched 6H-SiC(0001) substrates and subsequently grown AlN films

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(2), 394–400.

By: J. Hartman n, A. Roskowski n, Z. Reitmeier n, K. Tracy n, R. Davis n & R. Nemanich n

UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

2003 journal article

Domain structures in 6H-SiC wafers and their effect on the microstructures of GaN films grown on AlN and Al0.2Ga0.8N buffer layers

JOURNAL OF CRYSTAL GROWTH, 258(1-2), 75–83.

By: E. Preble n, P. Miraglia, A. Roskowski, W. Vetter, M. Dudley & R. Davis

author keywords: characterization; defects; X-ray diffraction; metalorganic vapor phase epitaxy; nitrides; semiconducting silicon compounds
UN Sustainable Development Goal Categories
14. Life Below Water (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2003 journal article

Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag

JOURNAL OF APPLIED PHYSICS, 94(6), 3939–3948.

By: K. Tracy n, P. Hartlieb n, S. Einfeldt n, R. Davis n, E. Hurt n & R. Nemanich n

Source: Web Of Science
Added: August 6, 2018

2003 journal article

Electron energy distribution during high-field transport in AlN

JOURNAL OF APPLIED PHYSICS, 93(5), 2765–2771.

By: R. Collazo n, R. Schlesser n, A. Roskowski n, P. Miraglia n, R. Davis n & Z. Sitar n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2003 journal article

Evolution and growth of ZnO thin films on GaN(0001) epilayers via metalorganic vapor phase epitaxy

JOURNAL OF CRYSTAL GROWTH, 257(3-4), 255–262.

By: T. Smith n, W. Mecouch n, P. Miraglia n, A. Roskowski n, P. Hartlieb n & R. Davis n

author keywords: crystal morphology; dislocations; stacking faults; x-ray diffraction; organometallic vapor phase deposition; ZnO
UN Sustainable Development Goal Categories
14. Life Below Water (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2003 journal article

GaN evaporation and enhanced diffusion of Ar during high-temperature ion implantation

JOURNAL OF APPLIED PHYSICS, 93(9), 5140–5142.

By: I. Usov*, N. Parikh*, Y. Kudriavtsev*, R. Asomoza*, Z. Reitmeier n & R. Davis n

Source: Web Of Science
Added: August 6, 2018

2003 journal article

Gallium nitride and related materials: challenges in materials processing

ACTA MATERIALIA, 51(19), 5961–5979.

By: R. Davis n, S. Einfeldt*, E. Preble*, A. Roskowski*, Z. Reitmeier n & P. Miraglia*

author keywords: compound semiconductors; thin films; dislocations; strain; pendeo-epitaxy
UN Sustainable Development Goal Categories
14. Life Below Water (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2003 patent

Gallium nitride semiconductor structure including laterally offset patterned layers

Washington, DC: U.S. Patent and Trademark Office.

By: R. Davis & O. Nam

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Gallium nitride semiconductor structures fabricated by pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Gallium nitride semiconductor structures including lateral gallium nitride layers

Washington, DC: U.S. Patent and Trademark Office.

By: R. Davis, O. Nam, T. Zheleva & M. Bremser

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Gold Schottky contacts on oxygen plasma-treated, n-type ZnO(000(1)over-bar)

APPLIED PHYSICS LETTERS, 82(3), 400–402.

By: B. Coppa n, R. Davis n & R. Nemanich n

Source: Web Of Science
Added: August 6, 2018

2003 journal article

Helical-type surface defects in GaN thin films epitaxially grown on GaN templates at reduced temperatures

JOURNAL OF CRYSTAL GROWTH, 253(1-4), 16–25.

By: P. Miraglia*, E. Preble n, A. Roskowski n, S. Einfeldt n & R. Davis n

author keywords: atomic force microscopy; growth models; line defects; surface defects; metalorganic vapor phase epitaxy; gallium nitride
Source: Web Of Science
Added: August 6, 2018

2003 journal article

Helical-type surface defects in InGaN thin films epitaxially grown on GaN templates at reduced temperatures

THIN SOLID FILMS, 437(1-2), 140–149.

By: P. Miraglia*, E. Preble*, A. Roskowski*, S. Einfeldt*, S. Lim, Z. Liliental-Weber, R. Davis*

author keywords: surface defects; atomic force microscopy; metalorganic vapor phase epitaxy; indium gallium nitride
UN Sustainable Development Goal Categories
14. Life Below Water (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2003 journal article

High performance 0.14 mu m gate-length AlGaN/GaN power HEMTs on SiC

IEEE ELECTRON DEVICE LETTERS, 24(11), 677–679.

By: G. Jessen*, R. Fitch*, J. Gillespie*, G. Via*, N. Moser*, M. Yannuzzi*, A. Crespo*, J. Sewell* ...

author keywords: GaN; high electron mobility transistor (HEMT); power; SiC
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2003 journal article

Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)

JOURNAL OF APPLIED PHYSICS, 93(7), 3995–4004.

By: T. Cook n, C. Fulton n, W. Mecouch n, K. Tracy n, R. Davis n, E. Hurt n, G. Lucovsky n, R. Nemanich n

Source: Web Of Science
Added: August 6, 2018

2003 patent

Methods of fabricating gallium nitride microelectronic layers on silicon layers

Washington, DC: U.S. Patent and Trademark Office.

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth

Washington, DC: U.S. Patent and Trademark Office.

By: R. Davis, O. Nam, T. Zheleva & M. Bremser

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Microscopic mapping of strain relaxation in uncoalesced pendeoepitaxial GaN on SiC

Physical Review. B, Condensed Matter and Materials Physics, 67(4), 045321–045321.

By: U. Schwarz, P. Schuck, M. Mason, R. Grober, A. Roskowski, S. Einfeldt, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates

Washington, DC: U.S. Patent and Trademark Office.

By: T. Gehrke, K. Linthicum & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

By: T. Gehrke, K. Linthicum & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Preparation and characterization of atomically clean, stoichiometric surfaces of n- and p-type GaN(0001)

JOURNAL OF APPLIED PHYSICS, 94(5), 3163–3172.

By: K. Tracy n, W. Mecouch n, R. Davis n & R. Nemanich n

Source: Web Of Science
Added: August 6, 2018

2003 article

Response to "Comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' [J. Appl. Phys. 91, 732 (2002)]"

Hartlieb, P. J., Roskowski, A., Davis, R. F., Platow, W., & Nemanich, R. J. (2003, March 15). JOURNAL OF APPLIED PHYSICS, Vol. 93, pp. 3679–3679.

By: P. Hartlieb n, A. Roskowski n, R. Davis n, W. Platow n & R. Nemanich n

Source: Web Of Science
Added: August 6, 2018

2003 journal article

Supersonic jet epitaxy of gallium nitride using triethylgallium and ammonia

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(1), 294–301.

By: A. McGinnis n, D. Thomson n, A. Banks n, E. Preble n, R. Davis n & H. Lamb n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2003 journal article

Surface morphology and strain of GaN layers grown using 6H-SiC(0001) substrates with different buffer layers

JOURNAL OF CRYSTAL GROWTH, 253(1-4), 129–141.

By: S. Einfeldt n, Z. Reitmeier n & R. Davis n

author keywords: stresses; surface structure; metalorganic vapor phase epitaxy; nitrides
UN Sustainable Development Goal Categories
14. Life Below Water (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2002 journal article

Application of Nomarski interference contrast microscopy as a thickness monitor in the preparation of transparent, SiG-based, cross-sectional TEM samples

ULTRAMICROSCOPY, 92(3-4), 265–271.

By: E. Preble n, H. McLean n, S. Kiesel n, P. Miraglia n, M. Albrecht* & R. Davis n

author keywords: Nomarski; transmission electron microscopy; silicon carbide; transparent samples
TL;DR: Reflected light optical microscopy using a Nomarski prism and a differential interference contrast filter have been employed in concert to achieve a technique that provides an accurate color reference for thickness during the dimpling and ion milling of transparent transmission electron microscopy samples of 6H-SiC(000 1) wafers. (via Semantic Scholar)
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

2002 journal article

Chemical, electrical, and structural properties of Ni/Au contacts on chemical vapor cleaned p-type GaN

JOURNAL OF APPLIED PHYSICS, 91(11), 9151–9160.

By: P. Hartlieb n, A. Roskowski n, R. Davis n & R. Nemanich n

Source: Web Of Science
Added: August 6, 2018

2002 journal article

Cross-sectional imaging of pendeo-epitaxial GaN using continuous-wave two-photon microphotoluminescence

APPLIED PHYSICS LETTERS, 81(11), 1984–1986.

By: P. Schuck*, R. Grober*, A. Roskowski n, S. Einfeldt n & R. Davis n

Source: Web Of Science
Added: August 6, 2018

2002 journal article

Effect of implantation temperature on damage accumulation in Ar-implanted GaN

MRS Internet Journal of Nitride Semiconductor Research, 7(9), 9–1.

By: I. Usov, N. Parikh, D. Thomson & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor-cleaned GaN thin films

JOURNAL OF APPLIED PHYSICS, 91(4), 2133–2137.

By: E. Preble n, K. Tracy n, S. Kiesel n, H. McLean n, P. Miraglia n, R. Nemanich n, R. Davis n, M. Albrecht*, D. Smith*

Source: Web Of Science
Added: August 6, 2018

2002 journal article

Electron-beam-induced optical memory effects in GaN

APPLIED PHYSICS LETTERS, 80(15), 2675–2677.

Source: Web Of Science
Added: August 6, 2018

2002 journal article

Gallium nitride materials - Progress, status, and potential roadblocks

PROCEEDINGS OF THE IEEE, 90(6), 993–1005.

By: R. Davis n, A. Roskowski*, E. Preble n, J. Speck*, B. Heying, J. Freitas*, E. Glaser*, W. Carlos*

author keywords: aluminum gallium nitride (AlGaN); defects; dislocations; dopants; electron irradiation; electron mobilities; excitons; Fourier transform infrared (FTIR) absorption; gallium nitride (GaN); heteroepitaxy; hydride vapor phase epitaxy (HVPE); lateral epitaxial overgrowth; magnetic resonance; metal-organic vapor phase epitaxy (MOVPE); Mg doping; molecular beam epitaxy (MBE); pendeoepitaxy; photoluminescence; Raman spectroscopy; recombinations; secondary ion mass spectrometry (SIMS); Si doping; two-dimensional electron gas
TL;DR: State-of-the-art Mg doping profiles and transport properties have been achieved in MBE-derived p-type GaN, and the Mg-memory effect, and heterogeneous growth, substrate uniformity, and flux control are significant challenges for MOVPE and MBE. (via Semantic Scholar)
Source: Web Of Science
Added: August 6, 2018

2002 journal article

Growth and decomposition of bulk GaN: role of the ammonia/nitrogen ratio

JOURNAL OF CRYSTAL GROWTH, 236(4), 529–537.

author keywords: decomposition; growth from vapor; single crystal growth; gallium compounds; nitrides semi-conducting III-V materials
Source: Web Of Science
Added: August 6, 2018

2002 journal article

High temperature nucleation and growth of GaN crystals from the vapor phase

JOURNAL OF CRYSTAL GROWTH, 241(4), 404–415.

By: H. Shin n, D. Thomson n, R. Schlesser n, R. Davis n & Z. Sitar n

author keywords: crystal morphology; nucleation; growth from vapor; seed crystals; nitrides; semiconducting gallium compounds
Source: Web Of Science
Added: August 6, 2018

2002 patent

High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates

Washington, DC: U.S. Patent and Trademark Office.

By: T. Gehrke, K. Linthicum, R. Davis & D. Thomson

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Investigations regarding the maskless pendeo-epitaxial growth of GaN films prior to coalescence

IEEE JOURNAL OF QUANTUM ELECTRONICS, 38(8), 1006–1016.

By: A. Roskowski n, E. Preble n, S. Einfeldt n, P. Miraglia n & R. Davis n

author keywords: chemical vapor deposition; semiconductor growth; thin films; topography
Source: Web Of Science
Added: August 6, 2018

2002 article

Maskless pendeo-epitaxial growth of GaN films

Roskowski, A. M., Preble, E. A., Einfeldt, S., Miraglia, P. M., & Davis, R. F. (2002, May). JOURNAL OF ELECTRONIC MATERIALS, Vol. 31, pp. 421–428.

By: A. Roskowski n, E. Preble n, S. Einfeldt n, P. Miraglia n & R. Davis n

author keywords: pendeo-epitaxy (PE); gallium nitride (GaN); metalorganic vapor phase epitaxy (MOVPE); atomic force microscopy (AFM); x-ray diffraction (XRD); photoluminescence (PL)
Source: Web Of Science
Added: August 6, 2018

2002 patent

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 patent

Methods of forming compound semiconductor layers using spaced trench arrays and semiconductor substrates formed thereby

Washington, DC: U.S. Patent and Trademark Office.

By: T. Gehrke, K. Linthicum & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces

JOURNAL OF APPLIED PHYSICS, 91(2), 732–738.

By: P. Hartlieb n, A. Roskowski n, R. Davis n, W. Platow n & R. Nemanich n

Source: Web Of Science
Added: August 6, 2018

2002 patent

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Washington, DC: U.S. Patent and Trademark Office.

Source: NC State University Libraries
Added: August 6, 2018

2002 patent

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, ang gallium nitratde semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke, D. Thomson, E. Carlson, P. Rajagopal & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 patent

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Probing the AlxGa1-xN spatial alloy fluctuation via UV-photoluminescence and Raman at submicron scale

APPLIED PHYSICS LETTERS, 81(22), 4186–4188.

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2002 journal article

Reduction in dislocation density and strain in GaN thin films grown via maskless pendeo-epitaxy

Opto-Electronics Review, 10(4), 261–270.

By: A. Roskowski, E. Preble, S. Einfeldt, P. Miraglia, J. Schuck, R. Grober, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Strain and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeoepitaxy

APPLIED PHYSICS LETTERS, 80(6), 953–955.

By: S. Einfeldt n, A. Roskowski n, E. Preble n & R. Davis n

Source: Web Of Science
Added: August 6, 2018

2002 journal article

Strain in cracked AlGaN layers

JOURNAL OF APPLIED PHYSICS, 92(1), 118–123.

By: S. Einfeldt*, M. Diesselberg*, H. Heinke*, D. Hommel*, D. Rudloff*, J. Christen*, R. Davis n

Source: Web Of Science
Added: August 6, 2018

2002 journal article

Surface instability and associated roughness during conventional and pendeo-epitaxial growth of GaN(0001) films via MOVPE

JOURNAL OF CRYSTAL GROWTH, 241(1-2), 141–150.

By: A. Roskowski n, P. Miraglia n, E. Preble n, S. Einfeldt n & R. Davis n

author keywords: characterization; defects; surface structure; metalorganic vapor phase epitaxy; pendeoepitaxy; semiconducting gallium compounds
UN Sustainable Development Goal Categories
14. Life Below Water (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2002 journal article

The influence of band offsets on the IV characteristics for GaN/SiC heterojunctions

SOLID-STATE ELECTRONICS, 46(6), 827–835.

By: E. Danielsson*, C. Zetterling*, M. Ostling*, K. Linthicum n, D. Thomson n, O. Nam n, R. Davis n

author keywords: GaN/SiC heterojunction; band offset; midgap theory
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2002 journal article

TiC nanoisland formation on 6H-SiC(0001)(Si)

JOURNAL OF APPLIED PHYSICS, 91(9), 6081–6084.

By: W. Platow n, J. Oh n, R. Nemanich n, D. Sayers n, J. Hartman n & R. Davis n

UN Sustainable Development Goal Categories
14. Life Below Water (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2001 article

Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates

Davis, R. F., Gehrke, T., Linthicum, K. J., Preble, E., Rajagopal, P., Ronning, C., … Mehregany, M. (2001, October). JOURNAL OF CRYSTAL GROWTH, Vol. 231, pp. 335–341.

By: R. Davis n, T. Gehrke n, K. Linthicum n, E. Preble n, P. Rajagopal n, C. Ronning*, C. Zorman*, M. Mehregany*

author keywords: characterization; defects; dislocations; X-ray diffraction; selective growth; metalorganic chemical vapor deposition metalorganic vapor phase epitaxy; pendeoepitaxy; gallium compounds; nitrides; silicon; semiconducting gallium compounds; scanning electron microscopy; transmission electron microscopy
Source: Web Of Science
Added: August 6, 2018

2001 journal article

Growth of epitaxial CoSi2 on 6H-SiC(0001)(Si)

JOURNAL OF APPLIED PHYSICS, 90(12), 5924–5927.

By: W. Platow n, R. Nemanich n, D. Sayers n, J. Hartman n & R. Davis n

UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

2001 journal article

In situ cleaning of GaN/6H-SiC substrates in NH3

JOURNAL OF CRYSTAL GROWTH, 222(3), 452–458.

By: A. McGinnis n, D. Thomson n, R. Davis n, E. Chen n, A. Michel n & H. Lamb n

author keywords: gallium nitride; surface preparation; ammonia; homoepitaxy
Source: Web Of Science
Added: August 6, 2018

2001 review

Ion implantation into gallium nitride

[Review of ]. PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 351(5), 349–385.

By: C. Ronning*, E. Carlson & R. Davis

author keywords: ion implantation; gallium nitride; structural properties; optical properties; dopants
Source: Web Of Science
Added: August 6, 2018

2001 journal article

Kinetics and gas-surface dynamics of GaN homoepitaxial growth using NH3-seeded supersonic molecular beams

SURFACE SCIENCE, 494(1), 28–42.

By: A. McGinnis n, D. Thomson n, R. Davis n, E. Chen n, A. Michel n & H. Lamb n

author keywords: gallium nitride; epitaxy; ammonia; chemisorption; adsorption kinetics; growth; surface structure, morphology, roughness, and topography
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2001 journal article

Lateral epitaxy and dislocation density reduction in selectively grown GaN structures

JOURNAL OF CRYSTAL GROWTH, 222(4), 706–718.

By: T. Zheleva n, O. Nam n, W. Ashmawi n, J. Griffin n & R. Davis n

author keywords: epitaxy; selective growth; lateral epitaxial overgrowth; gallium nitride; pendeo-epitaxy; defects; transmission electron microscopy
Source: Web Of Science
Added: August 6, 2018

2001 patent

Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke, R. Davis, D. Thomson & K. Tracy

Source: NC State University Libraries
Added: August 6, 2018

2001 patent

Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

By: T. Zheleva, D. Thomson, S. Smith, K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2001 patent

Methods of forming a plurality of semiconductor layers using spaced trench arrays

Washington, DC: U.S. Patent and Trademark Office.

By: T. Gehrke, K. Linthicum & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Optical metastability of subband gap (2.2 eV) yellow luminescence in GaN

APPLIED PHYSICS LETTERS, 79(3), 281–283.

By: Y. Chang n, A. Oberhofer n, J. Muth n, R. Kolbas n & R. Davis n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2001 journal article

Pendeo-epitaxial growth and characterization of thin films of gallium nitride and related materials on SiC(0001) and si(111) substrates

Zeitschrift Fur MetallkundeAmerican Journal of Physiology, 92(2), 163–166.

By: R. Davis, T. Gehrke, K. Linthicum, T. Zheleva, P. Rajagopal, C. Zorman, M. Mehregany

Source: NC State University Libraries
Added: August 6, 2018

2001 article

Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization

Davis, R. F., Gehrke, T., Linthicum, K. J., Zheleva, T. S., Preble, E. A., Rajagopal, P., … Mehregany, M. (2001, May). JOURNAL OF CRYSTAL GROWTH, Vol. 225, pp. 134–140.

By: R. Davis n, T. Gehrke n, K. Linthicum*, T. Zheleva n, E. Preble n, P. Rajagopal*, C. Zorman*, M. Mehregany*

author keywords: crystal morphology; defects; interfaces; pendeoepitaxy; nitrides; semiconducting gallium compounds
Source: Web Of Science
Added: August 6, 2018

2001 patent

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Washington, DC: U.S. Patent and Trademark Office.

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Photoluminescence and electrical characteristics of the two-dimensional electron gas in Si delta-doped GaN layers

APPLIED PHYSICS LETTERS, 78(12), 1688–1690.

By: C. Teng n, M. Aboelfotoh n, R. Davis n, J. Muth n & R. Kolbas n

Source: Web Of Science
Added: August 6, 2018

2001 journal article

Polarization charges and polarization-induced barriers in AlxGa1-xN/GaN and InyGa1-yN/GaN heterostructures

APPLIED PHYSICS LETTERS, 79(18), 2916–2918.

By: L. Jia*, E. Yu*, D. Keogh*, P. Asbeck*, P. Miraglia n, A. Roskowski n, R. Davis n

Source: Web Of Science
Added: August 6, 2018

2001 journal article

Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates

MRS Internet Journal of Nitride Semiconductor Research, 6(14), 1–16.

By: R. Davis, T. Gehrke, K. Linthicum, P. Rajagopal, A. Roskowski, T. Zheleva, E. Preble, C. Zorman ...

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Strain and dislocation reduction in maskless pendeo-epitaxy GaN thin films

Physica Status Solidi. A, Applications and Materials Science, 188(2), 729–732.

By: A. Roskowski n, P. Miraglia n, E. Preble n, S. Einfeldt n, T. Stiles n, R. Davis n, J. Schuck*, R. Grober*, U. Schwarz*

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Time-resolved photoluminescence in strained GaN layers

Physica Status Solidi. A, Applications and Materials Science, 183(1), 151–155.

By: G. Pozina, N. Edwards, J. Bergman, B. Monemar, M. Bremser & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Time-resolved spectroscopy of strained GaN/AlN/6H-SiC heterostructures grown by metalorganic chemical vapor deposition

APPLIED PHYSICS LETTERS, 78(8), 1062–1064.

By: G. Pozina*, N. Edwards*, J. Bergman*, T. Paskova*, B. Monemar, M. Bremser n, R. Davis n

Source: Web Of Science
Added: August 6, 2018

2000 journal article

Crystallinity and microstructures of aluminum nitride films deposited on Si(111) substrates

SOLID-STATE ELECTRONICS, 44(4), 747–755.

By: H. Liaw*, R. Doyle*, P. Fejes*, S. Zollner*, A. Konkar*, K. Linthicum n, T. Gehrke n, R. Davis n

Source: Web Of Science
Added: August 6, 2018

2000 journal article

Dry etching and metallization schemes in a GaN/SiC heterojunction device process

Materials Science Forum, 338(3), 1049–1052.

By: E. Danielsson, C. Zetterling, M. Ostling, S. Lee, K. Linthicum, D. Thomson, O. Nam, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2000 patent

Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer

Washington, DC: U.S. Patent and Trademark Office.

By: R. Davis, O. Nam, T. Zheleva & M. Bremser

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Growth and characterization of GaN single crystals

JOURNAL OF CRYSTAL GROWTH, 208(1-4), 100–106.

By: C. Balkas n, Z. Sitar n, L. Bergman n, I. Shmagin n, J. Muth n, R. Kolbas n, R. Nemanich n, R. Davis n

author keywords: gallium nitride; crystal growth; vapor transport; photoluminescence; optical absorption
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Growth and characterization of piezoelectrically enhanced acceptor-type AlGaN/GaN heterostructures

MRS Internet Journal of Nitride Semiconductor Research, 5, U520–525.

By: A. Michel, D. Hanser, R. Davis, D. Qiao, S. Lau, L. Yu, W. Sun, P. Asbeck

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Growth and microstructure of InxGa1-xN films grown on SiC substrates via low pressure metalorganic vapor phase epitaxy

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 3(3), 163–171.

By: A. Hanser n, A. Banks n, R. Davis n, B. Jahnen*, M. Albrecht*, W. Dorsch*, S. Christiansen*, H. Strunk*

author keywords: microstructure; Burgers vector; MOVPE
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Hot electron transport in AlN

JOURNAL OF APPLIED PHYSICS, 88(10), 5865–5869.

By: R. Collazo n, R. Schlesser n, A. Roskowski n, R. Davis n & Z. Sitar n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2000 journal article

Influence of annealing conditions on dopant activation of Si+ and Mg+ implanted GaN

Materials Science Forum, 338(3), 1615–1618.

By: A. Suvkhanov, N. Parikh, I. Usov, J. Hunn, S. Withrow, D. Thomson, T. Gehrke, R. Davis, L. Krasnobaev

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery

JOURNAL OF APPLIED PHYSICS, 87(5), 2149–2157.

By: C. Ronning*, M. Dalmer, M. Uhrmacher, M. Restle, U. Vetter, L. Ziegeler, H. Hofsass, T. Gehrke*, K. Jarrendahl*, R. Davis*

Source: Web Of Science
Added: August 6, 2018

2000 journal article

Lateral- and pendeo-epitaxial growth and defect reduction in GaN thin films

Materials Science Forum, 338(3), 1471–1476.

By: R. Davis, O. Nam, T. Zheleva, T. Gehrke, K. Linthicum & P. Rajagopal

Source: NC State University Libraries
Added: August 6, 2018

2000 article

Optical characterization of wide bandgap semiconductors

Edwards, N. V., Bremser, M. D., Batchelor, A. D., Buyanova, I. A., Madsen, L. D., Yoo, S. D., … Monemar, B. (2000, March 27). THIN SOLID FILMS, Vol. 364, pp. 98–106.

By: N. Edwards*, M. Bremser n, A. Batchelor n, I. Buyanova*, L. Madsen*, S. Yoo n, T. Welhkamp, K. Wilmers* ...

author keywords: GaN; strain; valence bands; reflectance; excitons; reciprocal space analysis; spectroscopic ellipsometry
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2000 journal article

Pendeo-epitaxial growth and characterization of GaN and related materials on (6H-SiC(0001) and Si(111) substrates

MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U46–57.

By: R. Davis, T. Gehrke, K. Linthicum, T. Zheleva, P. Rajagopal, C. Zorman, M. Mehregany

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Pendeo-epitaxial growth of gallium nitride on silicon substrates

JOURNAL OF ELECTRONIC MATERIALS, 29(3), 306–310.

By: T. Gehrke n, K. Linthicum n, E. Preble n, P. Rajagopal n, C. Ronning n, C. Zorman*, M. Mehregany*, R. Davis n

author keywords: Pendeo epitaxy; lateral epitaxy; gallium nitride (GaN); silicon substrates; selective growth; coalescence; metalorganic vapor phase epitaxy (MOVPE)
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Pendeo-epitaxy (TM) process for aluminum gallium nitride thin films on silicon carbide substrates via metalorganic chemical vapor deposition

Materials Science Forum, 338(3), 1491–1494.

By: T. Gehrke, K. Linthicum, P. Rajagopal, E. Preble, E. Carlson, B. Robin, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2000 article

Photo-emission electron microscopy (PEEM) of cleaned and etched 6H-SiC(0001)

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, Vol. 338-3, pp. 353–356.

By: J. Hartman n, K. Naniwae n, C. Petrich n, V. Ramachandran, R. Feenstra*, R. Nemanich n, R. Davis*

author keywords: free electron laser; hydrogen etching; PEEM; photo emisson electron microscopy; silicon carbide; surface preparation; surface reconstruction
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Photoluminescence characterization of Mg implanted GaN

MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U622–628.

By: C. Ronning, H. Hofsass, A. Stotzler, M. Deicher, E. Carlson, P. Hartlieb, T. Gehrke, P. Rajagopal, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2000 article

Schottky barrier height and electron affinity of titanium on AIN

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 18, pp. 2082–2087.

By: B. Ward n, J. Hartman n, E. Hurt n, K. Tracy n, R. Davis n & R. Nemanich n

Source: Web Of Science
Added: August 6, 2018

2000 journal article

Selective etching of GaN over AlN using an inductively coupled plasma and an O-2/Cl-2/Ar chemistry

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 18(3), 879–881.

By: S. Smith*, W. Lampert*, P. Rajagopal n, A. Banks n, D. Thomson n & R. Davis n

Source: Web Of Science
Added: August 6, 2018

2000 journal article

SiC MISFETs with MBE-grown AlN gate dielectric

Materials Science Forum, 338(3), 1315–1318.

By: C. Zetterling, M. Ostling, H. Yano, T. Kimoto, H. Matsunami, K. Linthicum, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Zirconium mediated hydrogen outdiffusion from p-GaN

MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U491–496.

By: E. Kaminska, A. Piotrowska, A. Barcz, J. Jasinski, M. Zielinski, K. Golaszewska, R. Davis, E. Goldys, K. Tomsia

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Adhesion measurement of zirconium nitride and amorphous silicon carbide coatings to nickel and titanium alloys

SURFACE & COATINGS TECHNOLOGY, 114(2-3), 156–168.

By: K. Gruss n & R. Davis n

author keywords: adhesion measurement; amorphous silicon carbide; coatings; fracture mechanisms; nickel alloys; scratch test; titanium alloys; zirconium nitride; work of adhesion
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Characterization of Be-implanted GaN annealed at high temperatures

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.17).

Source: NC State University Libraries
Added: August 6, 2018

1999 article

Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces

Therrien, R., Niimi, H., Gehrke, T., Lucovsky, G., & Davis, R. (1999, September). MICROELECTRONIC ENGINEERING, Vol. 48, pp. 303–306.

By: R. Therrien n, H. Niimi n, T. Gehrke n, G. Lucovsky n & R. Davis n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1999 article

Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces

Therrien, R., Lucovsky, G., & Davis, R. F. (1999, November 16). PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Vol. 176, pp. 793–796.

By: R. Therrien*, G. Lucovsky n & R. Davis n

Source: Web Of Science
Added: August 6, 2018

1999 journal article

Chemical vapor cleaning of 6H-SiC surfaces

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(9), 3448–3454.

By: S. King*, R. Kern*, M. Benjamin n, J. Barnak, R. Nemanich n & R. Davis*

UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Dry ex situ cleaning processes for (0001)(Si) 6H-SiC surfaces

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(7), 2648–2651.

By: S. King*, R. Nemanich n & R. Davis*

Source: Web Of Science
Added: August 6, 2018

1999 journal article

Electrochemical evaluation of molybdenum nitride electrodes in H2SO4 electrolyte

JOURNAL OF APPLIED ELECTROCHEMISTRY, 29(1), 75–80.

By: S. Roberson n, D. Finello n & R. Davis n

author keywords: molybdenum nitride electrodes; capacitors; H2SO4 electrolytes
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Electronic structure of the 0.88-eV luminescence center in electron-irradiated gallium nitride

Physical Review. B, Condensed Matter and Materials Physics, 60(3), 1746–1751.

By: I. Buyanova, M. Wagner, W. Chen, N. Edwards, B. Monemar, J. Lindstrom, M. Bremser, R. Davis, H. Amano, I. Akasaki

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Evidence for localized Si-donor state and its DX-like properties in AlGaN: Errata (vol 74, pg 3833, 1999)

Applied Physics Letters, 75(20), 3225A.

By: C. Skierbiszewski, T. Suski, M. Leszczynski, M. Shin, M. Skowronski, M. Bremser, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Evidence for localized Si-donor state and its metastable properties in AlGaN

APPLIED PHYSICS LETTERS, 74(25), 3833–3835.

By: C. Skierbiszewski*, T. Suski*, M. Leszczynski*, M. Shin*, M. Skowronski*, M. Bremser n, R. Davis n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1999 article

Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1-xN

Hanser, A. D., Nam, O. H., Bremser, M. D., Thomson, D. B., Gehrke, T., Zheleva, T. S., & Davis, R. F. (1999, March). DIAMOND AND RELATED MATERIALS, Vol. 8, pp. 288–294.

By: A. Hanser n, O. Nam n, M. Bremser n, D. Thomson n, T. Gehrke n, T. Zheleva n, R. Davis n

author keywords: AlN; thin films; patterned structures; GaN
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1999 patent

High surface area molybdenum nitride electrodes

Washington, DC: U.S. Patent and Trademark Office.

By: S. Roberson, D. Finello & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Homoepitaxial GaN layers studied by low-energy electron microscopy, atomic force microscopy and transmission electronmicroscopy

Physica Status Solidi. A, Applications and Materials Science, 176(1), 469–473.

By: A. Pavlovska, V. Torres, J. Edwards, E. Bauer, D. Smith, R. Doak, I. Tsong, D. Thomson, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 article

Imaging electron emission from diamond and III-V nitride surfaces with photo-electron emission microscopy

Nemanich, R. J., English, S. L., Hartman, J. D., Sowers, A. T., Ward, B. L., Ade, H., & Davis, R. F. (1999, May). APPLIED SURFACE SCIENCE, Vol. 146, pp. 287–294.

By: R. Nemanich n, S. English n, J. Hartman n, A. Sowers n, B. Ward n, H. Ade n, R. Davis n

author keywords: diamond; photo-electron emission microscopy; field emission electron microscopy
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

1999 journal article

Low-energy electron microscopy observations of GaN homoepitaxy using a supersonic jet source

APPLIED PHYSICS LETTERS, 75(7), 989–991.

By: A. Pavlovska*, V. Torres*, E. Bauer*, R. Doak*, I. Tsong*, D. Thomson n, R. Davis n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Microstructure, electrical properties, and thermal stability of Ti-based ohmic contacts to n-GaN

JOURNAL OF MATERIALS RESEARCH, 14(3), 1032–1038.

By: L. Smith n, R. Davis n, R. Liu*, M. Kim* & R. Carpenter*

Source: Web Of Science
Added: August 6, 2018

1999 journal article

Ni/Si-based contacts to GaN: Thermally activated structural transformations leading to ohmic behavior

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G9.9).

By: E. Kaminska, A. Piotrowska, J. Jasinski, J. Kozubowski, A. Barcz, K. Golaszewska, D. Thomson, R. Davis, M. Bremser

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Observation of highly dispersive surface states on GaN(0001)1x1

Physical Review. B, Condensed Matter and Materials Physics, 59(24), R15586–15589.

By: Y. Chao, C. Stagarescu, J. Downes, P. Ryan, K. Smith, D. Hanser, M. Bremser, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Pendeo-epitaxy of gallium nitride and aluminum nitride films and heterostructures on silicon carbide substrate

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.2).

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Pendeo-epitaxy of gallium nitride thin films

Applied Physics Letters, 75(2), 196–198.

By: K. Linthicum n, T. Gehrke n, D. Thomson n, E. Carlson n, P. Rajagopal n, T. Smith n, D. Batchelor n, R. Davis n

Source: NC State University Libraries
Added: August 6, 2018

1999 personal communication

Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films

By: T. Zheleva, S. Smith, D. Thomson, K. Linthicum, P. Rajagopal & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Pendeo-epitaxy: A new approach for lateral growth of gallium nitride structures

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.38).

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Phonon dynamics and lifetimes of AlN and GaN crystallites

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G6.65).

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Process routes for low defect-density GaN on various substrates employing pendeo-epitaxial growth techniques

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.9).

By: K. Linthicum, T. Gehrke, D. Thomson, K. Tracy, E. Carlson, T. Smith, T. Zheleva, C. Zorman, M. Mehregany, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Raman analysis of phonon lifetimes in AlN and GaN of wurtzite structure

PHYSICAL REVIEW B, 59(20), 12977–12982.

By: L. Bergman n, D. Alexson n, P. Murphy n, R. Nemanich n, M. Dutta*, M. Stroscio*, C. Balkas n, H. Shin n, R. Davis n

Source: Web Of Science
Added: August 6, 2018

1999 journal article

Raman analysis of the E1 and A1 quasi-longitudinal optical and quasi-transverse optical modes in wurtzite AlN

JOURNAL OF APPLIED PHYSICS, 85(7), 3535–3539.

By: L. Bergman n, M. Dutta n, C. Balkas n, R. Davis n, J. Christman n, D. Alexson n, R. Nemanich n

Source: Web Of Science
Added: August 6, 2018

1999 journal article

Ranges of deposition temperatures applicable for metalorganic vapor phase epitaxy of GaN films via the technique of pendeo- epitaxy

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.37).

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Relaxation phenomena in GaN/ AlN/ 6H-SiC heterostructures

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.78).

By: N. Edwards*, A. Batchelor*, I. Buyanova*, L. Madsen*, M. Bremser n, R. Davis n, D. Aspnes n, B. Monemar

Sources: NC State University Libraries, NC State University Libraries
Added: August 6, 2018

1999 journal article

Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes

Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 61-2(1999 July 30), 320–324.

By: E. Danielsson, C. Zetterling, M. Ostling, B. Breitholtz, K. Linthicum, D. Thomson, O. Nam, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Stimulated emission in GaN thin films in the temperature range of 300-700 K

JOURNAL OF APPLIED PHYSICS, 85(3), 1792–1795.

By: S. Bidnyk*, B. Little*, T. Schmidt*, Y. Cho*, J. Krasinski*, J. Song*, B. Goldenberg*, W. Yang* ...

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Thermal mismatch stress relaxation via lateral epitaxy in selectively grown GaN structures

APPLIED PHYSICS LETTERS, 74(17), 2492–2494.

By: T. Zheleva n, W. Ashmawi n, O. Nam n & R. Davis n

Source: Web Of Science
Added: August 6, 2018

1999 journal article

Valence band discontinuity of the (0001) 2H-GaN/(111) 3C-SiC interface

JOURNAL OF ELECTRONIC MATERIALS, 28(12), L34–L37.

By: S. King n, R. Davis n, C. Ronning* & R. Nemanich n

author keywords: GaN; SiC; valence band; discontinuity; gallium nitride; silicon carbide; x-ray photoelectron spectroscopy; ultra-violet photoelectron spectroscopy
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Valence band discontinuity, surface reconstruction, and chemistry of (0001), (000(1)over-bar), and (1(1)over-bar-00) 2H-AlN/6H-SiC interfaces

JOURNAL OF APPLIED PHYSICS, 86(8), 4483–4490.

By: S. King n, R. Davis n, C. Ronning*, M. Benjamin n & R. Nemanich n

Source: Web Of Science
Added: August 6, 2018

1999 journal article

Wet chemical processing of (0001)(Si) 6H-SiC hydrophobic and hydrophilic surfaces

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(5), 1910–1917.

By: S. King*, R. Nemanich n & R. Davis n

Source: Web Of Science
Added: August 6, 2018

1999 journal article

X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms

JOURNAL OF APPLIED PHYSICS, 86(10), 5584–5593.

By: S. King n, E. Carlson n, R. Therrien n, J. Christman n, R. Nemanich n & R. Davis n

Source: Web Of Science
Added: August 6, 2018

1998 journal article

A free electron laser-photoemission electron microscope system (FEL-PEEM)

SURFACE REVIEW AND LETTERS, 5(6), 1257–1268.

By: H. Ade n, W. Yang n, S. English n, J. Hartman n, R. Davis n, R. Nemanich n, V. Litvinenko*, . Pinayev*, Y. Wu*, J. Madey*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

1998 article

Acceptor and donor doping of AlxGa1-xN thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy

Bremser, M. D., Perry, W. G., Nam, O. H., Griffis, D. P., Loesing, R., Ricks, D. A., & Davis, R. F. (1998, April). JOURNAL OF ELECTRONIC MATERIALS, Vol. 27, pp. 229–232.

By: M. Bremser n, W. Perry n, O. Nam n, D. Griffis n, R. Loesing n, D. Ricks n, R. Davis*

author keywords: 6H-SiC(0001); acceptor doping; AlxGa1-xN; GaN; charge scattering; donor doping; electron mobility
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy

JOURNAL OF MATERIALS RESEARCH, 13(7), 1816–1822.

By: R. Kern n, L. Rowland n, S. Tanaka n & R. Davis n

Source: Web Of Science
Added: August 6, 2018

1998 article

Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AlN and GaN thin films on alpha(6H)-SiC substrates

Hanser, A. D., Wolden, C. A., Perry, W. G., Zheleva, T., Carlson, E. P., Banks, A. D., … Davis, R. F. (1998, April). JOURNAL OF ELECTRONIC MATERIALS, Vol. 27, pp. 238–245.

By: A. Hanser n, C. Wolden*, W. Perry n, T. Zheleva n, E. Carlson n, A. Banks n, R. Therrien n, R. Davis n

author keywords: AlN; diluent; doping; GaN; metalorganic vapor phase epitaxy (MOVPE); photoluminescence (PL); reactor modeling
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Biaxial strain in AlxGa1-xN/GaN layers deposited on 6H-SiC

THIN SOLID FILMS, 324(1-2), 107–114.

By: W. Perry n, M. Bremser n, T. Zheleva n, K. Linthicum n & R. Davis n

author keywords: high resolution X-ray diffraction; in-plane components; reciprocal lattice vector
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Cathodoluminescence studies of the deep level emission bands of AlxGa1-xN films deposited on 6H-SiC(0001)

JOURNAL OF APPLIED PHYSICS, 83(1), 469–475.

By: W. Perry n, M. Bremser n & R. Davis n

Source: Web Of Science
Added: August 6, 2018

1998 journal article

Characterization of zirconium nitride coatings deposited by cathodic arc sputtering

SURFACE & COATINGS TECHNOLOGY, 107(2-3), 115–124.

By: K. Gruss n, T. Zheleva n, R. Davis n & T. Watkins*

author keywords: cathodic arc sputtering; zirconium nitride coatings; residual stress; incoloy; hastelloy; microstructure
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Cleaning of AlN and GaN surfaces

JOURNAL OF APPLIED PHYSICS, 84(9), 5248–5260.

By: S. King n, J. Barnak n, M. Bremser n, K. Tracy n, C. Ronning n, R. Davis n, R. Nemanich n

Source: Web Of Science
Added: August 6, 2018

1998 journal article

Coalesced oriented diamond films on nickel

JOURNAL OF MATERIALS RESEARCH, 13(5), 1120–1123.

By: P. Yang n, C. Wolden n, W. Liu n, R. Schlesser n, R. Davis n, J. Prater, Z. Sitar n

UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction

JOURNAL OF APPLIED PHYSICS, 84(4), 2086–2090.

By: S. King n, C. Ronning n, R. Davis n, M. Benjamin n & R. Nemanich n

Source: Web Of Science
Added: August 6, 2018

1998 journal article

Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy

JOURNAL OF APPLIED PHYSICS, 84(9), 5238–5242.

By: B. Ward n, O. Nam n, J. Hartman n, S. English n, B. McCarson n, R. Schlesser n, Z. Sitar n, R. Davis n, R. Nemanich n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1998 article

Electron emission properties of crystalline diamond and III-nitride surfaces

Nemanich, R. J., Baumann, P. K., Benjamin, M. C., Nam, O. H., Sowers, A. T., Ward, B. L., … Davis, R. F. (1998, June). APPLIED SURFACE SCIENCE, Vol. 130, pp. 694–703.

By: R. Nemanich n, P. Baumann n, M. Benjamin n, O. Nam n, A. Sowers n, B. Ward n, H. Ade n, R. Davis n

author keywords: electron emission; crystalline diamond; III-nitride
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

1998 journal article

Fine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiC

APPLIED PHYSICS LETTERS, 72(22), 2838–2840.

By: V. Joshkin*, C. Parker n, S. Bedair n, L. Krasnobaev n, J. Cuomo n, R. Davis n, A. Suvkhanov*

Source: Web Of Science
Added: August 6, 2018

1998 article

Flat-flame diamond CVD: the effect of pressure and operating conditions for specific applications

Wolden, C. A., Davis, R. F., Sitar, Z., & Prater, J. T. (1998, February). DIAMOND AND RELATED MATERIALS, Vol. 7, pp. 133–138.

By: C. Wolden n, R. Davis n, Z. Sitar n & J. Prater*

author keywords: boron doping; combustion synthesis; low temperature; texture
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

1998 personal communication

Growth of Fe3N films via chemical vapor deposition of iron acetylacetonate and anhydrous ammonia

By: S. Roberson, D. Finello, A. Banks & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Growth of MoxN films via chemical vapor deposition of MoCl5 and NH3

SURFACE & COATINGS TECHNOLOGY, 102(3), 256–259.

By: S. Roberson n, D. Finello* & R. Davis n

author keywords: molybdenum nitride; chemical vapour deposition; electrodes; tribological coatings
Source: Web Of Science
Added: August 6, 2018

1998 article

Growth of highly (0001)-oriented aluminum nitride thin films with smooth surfaces on silicon carbide by gas-source molecular beam epitaxy

Jarrendahl, K., Smith, S. A., Zheleva, T., Kern, R. S., & Davis, R. F. (1998, March). VACUUM, Vol. 49, pp. 189–191.

By: K. Jarrendahl n, S. Smith n, T. Zheleva n, R. Kern n & R. Davis n

Source: Web Of Science
Added: August 6, 2018

1998 article

Interfacial microstructure of Ni/Si-based ohmic contacts to GaN

Kaminska, E., Piotrowska, A., Jasinski, J., Kozubowski, J., Barcz, A., Golaszewska, K., … Davis, R. F. (1998, September). ACTA PHYSICA POLONICA A, Vol. 94, pp. 383–386.

By: E. Kaminska n, A. Piotrowska n, J. Jasinski n, J. Kozubowski n, A. Barcz n, K. Golaszewska n, M. Bremser n, R. Davis n

Source: Web Of Science
Added: August 6, 2018

1998 journal article

Intrinsic exciton transitions in GaN

JOURNAL OF APPLIED PHYSICS, 83(1), 455–461.

By: W. Shan*, A. Fischer*, S. Hwang*, B. Little*, R. Hauenstein*, X. Xie*, J. Song*, S. Kim* ...

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Investigation of optically active E-1 transversal optic phonon modes in AlxGa1-xN layers deposited on 6H-SiC substrates using infrared reflectance

APPLIED PHYSICS LETTERS, 73(13), 1760–1762.

By: P. Wisniewski*, W. Knap*, J. Malzac*, J. Camassel*, M. Bremser n, R. Davis n, T. Suski*

Source: Web Of Science
Added: August 6, 2018

1998 article

Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy

Nam, O. H., Zheleva, T. S., Bremser, M. D., & Davis, R. F. (1998, April). JOURNAL OF ELECTRONIC MATERIALS, Vol. 27, pp. 233–237.

By: O. Nam n, T. Zheleva n, M. Bremser n & R. Davis n

author keywords: coalescence; gallium nitride (GaN); lateral epitaxial overgrowth; metalorganic vapor phase epitaxy (MOVPE); selective growth
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Lattice site location studies of ion implanted Li-8 in GaN

JOURNAL OF APPLIED PHYSICS, 84(6), 3085–3089.

By: M. Dalmer*, M. Restle*, M. Sebastian*, U. Vetter*, H. Hofsass*, M. Bremser n, C. Ronning n, R. Davis n, U. Wahl*, K. Bharuth-Ram*

Source: Web Of Science
Added: August 6, 2018

1998 journal article

Materials properties and characterization of SiC

SIC MATERIALS AND DEVICES, 52, 1–20.

By: K. Jarrendahl* & R. Davis n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Microstructural factors influencing the properties of high surface area molybdenum nitride films converted from molybdenum trioxide films deposited via solution spray pyrolysis

JOURNAL OF MATERIALS RESEARCH, 13(8), 2237–2244.

By: S. Roberson n, D. Finello* & R. Davis n

UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Optical activation of Be implanted into GaN

APPLIED PHYSICS LETTERS, 73(12), 1622–1624.

By: C. Ronning n, E. Carlson n, D. Thomson n & R. Davis n

Source: Web Of Science
Added: August 6, 2018

1998 journal article

Optical and structural properties of lateral epitaxial overgrown GaN layers

Journal of Crystal Growth, 190(1998 June), 92–96.

By: J. Freitas, O. Nam, T. Zheleva & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Optical characterization of lateral epitaxial overgrown GaN layers

APPLIED PHYSICS LETTERS, 72(23), 2990–2992.

By: J. Freitas*, O. Nam n, R. Davis n, G. Saparin* & S. Obyden*

Source: Web Of Science
Added: August 6, 2018

1998 journal article

Phase control of MoxN films via chemical vapor deposition

THIN SOLID FILMS, 324(1-2), 30–36.

By: S. Roberson n, D. Finello n & R. Davis n

author keywords: MoxN films; phase control; chemical vapor deposition
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Phonon density of states of bulk gallium nitride

APPLIED PHYSICS LETTERS, 73(1), 34–36.

By: J. Nipko*, C. Loong*, C. Balkas n & R. Davis n

Source: Web Of Science
Added: August 6, 2018

1998 personal communication

Photoelectrochemical capacitance-voltage measurements in GaN

Stutz, C. E., Mack, M., Bremser, M. D., Nam, O. H., Davis, R. F., & Look, D. C. (1998, May).

By: C. Stutz, M. Mack*, M. Bremser n, O. Nam n, R. Davis n & D. Look*

author keywords: carrier concentration depth profile; GaN; photoelectrochemical etching
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Pinholes, dislocations and strain relaxation in InGaN

MRS Internet Journal of Nitride Semiconductor Research, 3(39).

By: B. Jahnen, M. Albrecht, W. Dorsch, S. Christiansen, H. Strunk, D. Hanser, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Reaction kinetics of silicon carbide deposition by gas-source molecular-beam epitaxy

Journal of Crystal Growth, 183(4), 581–593.

By: R. Kern, S. Tanaka, L. Rowland & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 article

Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films

Edwards, N. V., Yoo, S. D., Bremser, M. D., Horton, M. N., Perkins, N. R., Weeks, T. W., … Aspnes, D. E. (1998, February). THIN SOLID FILMS, Vol. 313, pp. 187–192.

By: N. Edwards*, S. Yoo*, M. Bremser*, M. Horton, N. Perkins, T. Weeks*, H. Liu, R. Stall ...

author keywords: GaN; spectroscopic ellipsometry; reflectance; valence bands; excitons; reciprocal space analysis
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

1998 journal article

Structural and electronic properties of boron nitride thin films containing silicon

JOURNAL OF APPLIED PHYSICS, 84(9), 5046–5051.

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Surface melting in the heteroepitaxial nucleation of diamond on Ni

JOURNAL OF CRYSTAL GROWTH, 187(1), 81–88.

By: P. Yang n, W. Liu n, R. Schlesser n, C. Wolden n, R. Davis n, J. Prater*, Z. Sitar n

author keywords: heteroepitaxial nucleation; diamond; nickel; hydrogen; surface melting
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Synthesis of low oxygen concentration molybdenum nitride films

Materials Science & Engineering. A, Structural Materials: Properties, Microstructure and Processing, 248(1-2), 198–205.

By: S. Roberson, D. Finello & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

The formation of crystalline defects and crystal growth mechanism in InxGa1-xN/GaN heterostructure grown by metalorganic vapor phase epitaxy

Journal of Crystal Growth, 190(1998 June), 24–28.

By: Y. Kawaguchi, M. Shimizu, M. Yamaguchi, K. Hiramatsu, N. Sawaki, W. Taki, H. Tsuda, N. Kuwano ...

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Transmission electron microscopy analysis of the oriented diamond growth on nickel substrates

JOURNAL OF APPLIED PHYSICS, 83(12), 7658–7663.

By: W. Liu n, P. Yang n, C. Wolden n, R. Davis n, J. Prater n & Z. Sitar n

UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Trends in residual stress for GaN/AlN/6H-SiC heterostructures

APPLIED PHYSICS LETTERS, 73(19), 2808–2810.

By: N. Edwards n, M. Bremser n, R. Davis n, A. Batchelor n, S. Yoo n, C. Karan n, D. Aspnes n

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

1998 journal article

X-ray photoelectron diffraction from (3X3) and (root 3X root 3)R30 degrees (001)(Si) 6H-SiC surfaces

JOURNAL OF APPLIED PHYSICS, 84(11), 6042–6048.

By: S. King n, C. Ronning n, R. Davis n, R. Busby n & R. Nemanich n

UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Control of diamond heteroepitaxy on nickel by optical reflectance

APPLIED PHYSICS LETTERS, 70(22), 2960–2962.

By: P. Yang n, R. Schlesser n, C. Wolden n, W. Liu n, R. Davis n, Z. Sitar n, J. Prater*

UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Deposition and doping of silicon carbide by gas-source molecular beam epitaxy

APPLIED PHYSICS LETTERS, 71(10), 1356–1358.

By: R. Kern n & R. Davis n

UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

APPLIED PHYSICS LETTERS, 71(17), 2472–2474.

By: T. Zheleva n, O. Nam n, M. Bremser n & R. Davis n

Source: Web Of Science
Added: August 6, 2018

1997 journal article

Gas-source molecular beam epitaxy of III-V nitrides

JOURNAL OF CRYSTAL GROWTH, 178(1-2), 87–101.

By: R. Davis*, M. Paisley, Z. Sitar*, D. Kester, K. Ailey, K. Linthicum*, L. Rowland, S. Tanaka, R. Kern*

author keywords: boron nitride; gallium nitride; aluminum nitride; molecular beam epitaxy
Source: Web Of Science
Added: August 6, 2018

1997 article

Growth and doping via gas-source molecular beam epitaxy of SiC and SiC/AlN heterostructures and their microstructural and electrical characterization

Kern, R. S., Jarrendahl, K., Tanaka, S., & Davis, R. F. (1997, August). DIAMOND AND RELATED MATERIALS, Vol. 6, pp. 1282–1288.

By: R. Kern n, K. Jarrendahl n, S. Tanaka n & R. Davis n

author keywords: silicon carbide; aluminum nitride; molecular beam epitaxy; kinetics
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1997 article

Growth of AlN and GaN thin films via OMVPE and gas source MBE and their characterization

Davis, R. F., Weeks, T. W., Bremser, M. D., Tanaka, S., Kern, R. S., Sitar, Z., … Wang, C. (1997, February). SOLID-STATE ELECTRONICS, Vol. 41, pp. 129–134.

By: R. Davis n, T. Weeks n, M. Bremser n, S. Tanaka n, R. Kern n, Z. Sitar n, K. Ailey n, W. Perry n, C. Wang n

UN Sustainable Development Goal Categories
14. Life Below Water (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1997 article

Growth of AlN, GaN and AlxGa1-xN thin films on vicinal and on-axis 6H-SiC(0001) substrates

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, Vol. 17, pp. 1775–1779.

By: R. Davis n, M. Bremser n, W. Perry n & K. Ailey n

Source: Web Of Science
Added: August 6, 2018

1997 journal article

Growth of GaN and Al0.2Ga0.8N on patterened substrates via organometallic vapor phase epitaxy

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 36(5A), L532–L535.

By: O. Nam n, M. Bremser n, B. Ward n, R. Nemanich n & R. Davis n

author keywords: GaN; AlGaN; 6H-SiC; selective growth; organometallic vapor phase epitaxy; hexagonal pyramid array; field emission; lateral diffusion
Source: Web Of Science
Added: August 6, 2018

1997 article

Growth, doping and characterization of AlxGa1-xN thin film alloys on 6H-SiC(0001) substrates

Bremser, M. D., Perry, W. G., Zheleva, T., Edwards, N. V., Nam, O. H., Parikh, N., … Davis, R. F. (1997, March). DIAMOND AND RELATED MATERIALS, Vol. 6, pp. 196–201.

By: M. Bremser n, W. Perry n, T. Zheleva n, N. Edwards n, O. Nam n, N. Parikh*, D. Aspnes n, R. Davis n

author keywords: GaN; alloy; AlGaN epitaxy; SiC substrates
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

1997 journal article

High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma

APPLIED PHYSICS LETTERS, 71(25), 3631–3633.

By: S. Smith n, C. Wolden n, M. Bremser n, A. Hanser n, R. Davis n & W. Lampert*

Source: Web Of Science
Added: August 6, 2018

1997 journal article

Homoepitaxial SiC growth by molecular beam epitaxy

Physica Status Solidi. B, Basic Solid State Physics, 202(1), 379–404.

By: R. Kern, K. Jarrendahl, S. Tanaka & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Hydrogen incorporation and its temperature stability in SiC crystals

SOLID-STATE ELECTRONICS, 41(5), 677–679.

By: J. Zavada*, R. Wilson*, F. Ren, S. Pearton* & R. Davis n

UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

1997 journal article

In situ mass spectrometry during diamond chemical vapor deposition using a low pressure flat flame

JOURNAL OF MATERIALS RESEARCH, 12(10), 2733–2742.

By: C. Wolden n, R. Davis n, Z. Sitar n & J. Prater*

UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

1997 conference paper

In-plane optical anisotropies of Al(x)Ga(1-x)N films in their regions of transparency

III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 835–840.

By: U. Rossow n, N. Edwards n, M. Bremser n, R. Kern n, H. Liu*, R. Davis n, D. Aspnes n

Sources: NC State University Libraries, NC State University Libraries
Added: August 6, 2018

1997 journal article

Indentation and microcutting fracture damage in a silicon carbide coating on an incoloy substrate

Surface & Coatings Technology, 88(1-3), 119–126.

By: B. Tanikella n, K. Gruss n, R. Davis n & R. Scattergood n

Source: NC State University Libraries
Added: August 6, 2018

1997 article

Ion implantation of epitaxial GaN films: Damage, doping and activation

Parikh, N., Suvkhanov, A., Lioubtchenko, M., Carlson, E., Bremser, M., Bray, D., … Hunn, J. (1997, May). NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol. 127, pp. 463–466.

By: N. Parikh*, A. Suvkhanov*, M. Lioubtchenko*, E. Carlson n, M. Bremser n, D. Bray n, R. Davis n, J. Hunn*

Source: Web Of Science
Added: August 6, 2018

1997 journal article

Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

Applied Physics Letters, 71(18), 2698–2640.

By: O. Nam, M. Bremser, T. Zheleva & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Low-temperature deposition of optically transparent diamond using a low-pressure flat flame

DIAMOND AND RELATED MATERIALS, 6(12), 1862–1867.

By: C. Wolden n, R. Davis n, Z. Sitar n & J. Prater*

author keywords: combustion synthesis; low temperature; acetylene; Raman spectroscopy
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Microstructure, electrical properties, and thermal stability of Au-based ohmic contacts to p-GaN

JOURNAL OF MATERIALS RESEARCH, 12(9), 2249–2254.

By: L. Smith n, R. Davis n, M. Kim*, R. Carpenter* & Y. Huang*

Source: Web Of Science
Added: August 6, 2018

1997 article

Ohmic contacts to GaN by solid-phase regrowth

Kaminska, E., Piotrowska, A., Barcz, A., Ilka, L., Guziewicz, M., Kasjaniuk, S., … Davis, R. F. (1997, October). ACTA PHYSICA POLONICA A, Vol. 92, pp. 819–823.

By: E. Kaminska*, A. Piotrowska*, A. Barcz*, L. Ilka*, M. Guziewicz*, S. Kasjaniuk*, E. Dynowska*, S. Kwiatkowski*, M. Bremser n, R. Davis n

Source: Web Of Science
Added: August 6, 2018

1997 journal article

Optical metastability in bulk GaN single crystals

APPLIED PHYSICS LETTERS, 71(4), 455–457.

By: I. Shmagin n, J. Muth n, J. Lee n, R. Kolbas n, C. Balkas n, Z. Sitar n, R. Davis n

Source: Web Of Science
Added: August 6, 2018

1997 journal article

Raman analysis of the configurational disorder in AlxGa1-xN films

APPLIED PHYSICS LETTERS, 71(15), 2157–2159.

By: L. Bergman n, M. Bremser n, W. Perry n, R. Davis n, M. Dutta n & R. Nemanich n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Silicon carbide for high-temperature microelectronics: recent advances in material growth via gas source MBE and device research

Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 46(1-3), 240–247.

By: R. Kern & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 50(1-3), 134–141.

By: N. Edwards n, S. Yoo n, M. Bremser n, T. Zheleva n, M. Horton*, N. Perkins*, T. Weeks n, H. Liu* ...

author keywords: GaN thin films; spectroscopic ellipsometry; bandedge phenomena
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

1997 journal article

Sublimation growth and characterization of bulk aluminum nitride single crystals

JOURNAL OF CRYSTAL GROWTH, 179(3-4), 363–370.

By: C. Balkas n, Z. Sitar n, T. Zheleva n, L. Bergman n, R. Nemanich n & R. Davis n

Source: Web Of Science
Added: August 6, 2018

1997 journal article

The composition pulling effect in MOVPE grown InGaN on GaN and AlGaN and its TEM characterization

MRS Internet Journal of Nitride Semiconductor Research, 2(6).

By: K. Hiramatsu, Y. Kawaguchi, M. Shimizu, N. Sawaki, T. Zheleva, R. Davis, H. Tsuda, W. Taki, N. Kuwano, K. Oki

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications

Applied Physics Letters, 71(16), 2289–2291.

By: A. Sowers n, J. Christman n, M. Bremser n, B. Ward n, R. Davis n & R. Nemanich n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Variation of GaN valence bands with biaxial stress and quantification of residual stress

APPLIED PHYSICS LETTERS, 70(15), 2001–2003.

By: N. Edwards n, S. Yoo n, M. Bremser n, T. Weeks n, O. Nam n, R. Davis n, H. Liu, R. Stall ...

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

1997 conference paper

Variation of GaN valence bands with biaxial stress: quantification of residual stress and impact on fundamental band parameters

III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 781–786.

By: N. Edwards n, S. Yoo n, M. Bremser n, M. Horton, N. Perkins, T. Weeks n, H. Liu*, R. Stall* ...

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: NC State University Libraries, NC State University Libraries
Added: August 6, 2018

1996 conference paper

Growth of bulk AIN and GaN single crystals by sublimation

III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 41–46. Pittsburgh, Pa.: Materials Research Society.

Source: NC State University Libraries
Added: August 6, 2018

1996 journal article

Strain-related phenomena in GaN thin films

Physical Review. B, Condensed Matter and Materials Physics, 54(24), 17745–17753.

By: C. Kisielowski, J. Kruger, S. Ruvimov, T. Suski, J. Ager, E. Jones, Z. Lilientalweber, M. Rubin ...

Source: NC State University Libraries
Added: August 6, 2018

1995 patent

Germanium doped n-type aluminum nitride epitaxial layers

Washington, DC: U.S. Patent and Trademark Office.

By: R. Davis & C. Wang

Source: NC State University Libraries
Added: August 6, 2018

1995 patent

Method of forming platinum ohmic contact to p-type silicon carbide

Washington, DC: U.S. Patent and Trademark Office.

By: R. Glass, J. Palmour, R. Davis & L. Porter

Source: NC State University Libraries
Added: August 6, 2018

1995 patent

Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide

Washington, DC: U.S. Patent and Trademark Office.

By: R. Davis, C. Carter & C. Hunter

Source: NC State University Libraries
Added: August 6, 2018

1994 patent

Platinum ohmic contact to p-type silicon carbide

Washington, DC: U.S. Patent and Trademark Office.

By: R. Glass, J. Palmour, R. Davis & L. Porter

Source: NC State University Libraries
Added: August 6, 2018

1993 book

Diamond films and coatings development, properties, and applications

Park Ridge, NJ: Noyes Pub.

By: . Robert F. Davis

Source: NC State University Libraries
Added: August 6, 2018

1992 patent

Implantation and electrical activation of dopants into monocrystalline silicon carbide

Washington, DC: U.S. Patent and Trademark Office.

By: J. Edmond & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1991 patent

Homoepitaxial growth of Alpha-SiC thin films and semiconductor devices fabricated thereon

Washington, DC: U.S. Patent and Trademark Office.

By: H. Kong, J. Glass & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1991 journal article

III-V NITRIDES FOR ELECTRONIC AND OPTOELECTRONIC APPLICATIONS

PROCEEDINGS OF THE IEEE, 79(5), 702–712.

By: R. Davis n

Source: Web Of Science
Added: August 6, 2018

1991 journal article

THIN-FILM DEPOSITION AND MICROELECTRONIC AND OPTOELECTRONIC DEVICE FABRICATION AND CHARACTERIZATION IN MONOCRYSTALLINE ALPHA AND BETA SILICON-CARBIDE

PROCEEDINGS OF THE IEEE, 79(5), 677–701.

By: R. Davis n, G. Kelner*, M. Shur*, J. Palmour* & J. Edmond*

UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

1990 patent

Growth of beta-sic thin films and semiconductor devices fabricated thereon

Washington, DC: U.S. Patent and Trademark Office.

By: R. Davis, H. Kong, J. Glass & C. Carter

Source: NC State University Libraries
Added: August 6, 2018

1990 patent

Homoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon

Washington, DC: U.S. Patent and Trademark Office.

By: H. Kong, J. Glass & R. Davis