Robert F. Davis

Band alignment at AlN/Si (111) and (001) interfaces

JOURNAL OF APPLIED PHYSICS, 118(4).

Cleaning of pyrolytic hexagonal boron nitride surfaces

SURFACE AND INTERFACE ANALYSIS, 47(7), 798–803.

Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 33(5).

Hydrogen desorption kinetics for aqueous hydrogen fluoride and remote hydrogen plasma processed silicon (001) surfaces

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 33(5).

Desorption and sublimation kinetics for fluorinated aluminum nitride surfaces

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 32(5).

Gas source molecular beam epitaxy of scandium nitride on silicon carbide and gallium nitride surfaces

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 32(6).

Photoemission investigation of the Schottky barrier at the Sc/3C-SiC (111) interface

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 252(2), 391–396.

Valence and conduction band alignment at ScN interfaces with 3C-SiC (111) and 2H-GaN (0001)

APPLIED PHYSICS LETTERS, 105(8).

Surface and defect microstructure of GaN and AlN layers grown on hydrogen-etched 6H-SiC(0001) substrates

Acta Materialia, 58(6), 2165–2175.

On the origin of aluminum-related cathodoluminescence emissions from sublimation grown 4H-SiC(11(2)over-bar0)

APPLIED SURFACE SCIENCE, 255(13-14), 6535–6539.

Sequential growths of AlN and GaN layers on as-polished 6H-SiC(0001) substrates

ACTA MATERIALIA, 57(14), 4001–4008.

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Washington, DC: U.S. Patent and Trademark Office.

Sublimation growth of an in-situ-deposited layer in SiC chemical vapor deposition on 4H-SiC(1 1 (2)over-bar 0)

JOURNAL OF CRYSTAL GROWTH, 311(1), 72–78.

Characterization of growth defects in thin GaN layers with X-ray microbeam

Barabash, R. I., Ice, G. E., Roder, C., Budai, J., Liu, W., Figge, S., … Davis, R. F. (2007, May). PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 244, pp. 1735–1742.

Electrical and optical properties of ZnO (000(1)over-bar) wafers implanted with argon

Journal of Applied Physics, 101(2).

Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H-SiC (11(2)over-bar0)

Bishop, S. M., Park, J.-S., Gu, J., Wagner, B. P., Reltmeier, Z. J., Batchelor, D. A., … Davis, R. F. (2007, March 1). JOURNAL OF CRYSTAL GROWTH, Vol. 300, pp. 83–89.

Kinetics of Ga and In desorption from (7x7)Si(111) and (3x3)6H-SiC(0001) surfaces

SURFACE SCIENCE, 602(2), 405–415.

Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches

Washington, DC: U.S. Patent and Trademark Office.

Nitrogen acceptors in bulk ZnO (000(1)over-bar)) substrates and homoepitaxial ZnO films

JOURNAL OF APPLIED PHYSICS, 102(2).

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

Phonon-assisted stimulated emission from pendeoepitaxy GaN stripes grown on 6H-SiC substrates

Applied Physics Letters, 91(5).

Characterization of crystallographic properties and defects via X-ray microdiffraction in GaN (0001) layers

Physica Status Solidi. A, Applications and Materials Science, 203(1), 142–148.

Effect of thermal annealing on the metastable optical properties of GaN thin films

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 24(4), 1051–1054.

Growth and characterization of pendeo-epitaxial GaN(11(2)over-bar0) on 4H-SiC(11(2)over-bar0) substrates

JOURNAL OF CRYSTAL GROWTH, 290(2), 504–512.

Growth and structural investigations of epitaxial hexagonal YMnO3 thin films deposited on wurtzite GaN(001) substrates

THIN SOLID FILMS, 515(4), 1807–1813.

Mapping misorientation and crystallographic tilt in GaN layers via polychromatic microdiffraction

Barabash, R. I., Ice, G. E., Liu, W., Roder, C., Figge, S., Einfeldt, S., … Davis, R. F. (2006, June). PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 243, pp. 1508–1513.

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

Origins of parasitic emissions from 353 nm AlGaN-based ultraviolet light emitting diodes over SiC substrates

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45(5A), 4083–4086.

A printable form of single-crystalline gallium nitride for flexible optoelectronic systems

Small (Weinheim An Der Bergstrasse, Germany), 1(12), 1164–1168.

Effect of carrier blocking layers on the emission characteristics of AlGaN-based ultraviolet light emitting diodes

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(10), 7254–7259.

Growth and fabrication of AlGaN-based ultraviolet light emitting diodes on 6H-SiC(0001) substrates and the effect of carrier-blocking layers on their emission characteristics

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 127(2-3), 169–179.

Growth of dense ZnO films via MOVPE on GaN(0001) epilayers using a low/high-temperature sequence

JOURNAL OF CRYSTAL GROWTH, 277(1-4), 345–351.

Homoepitaxial growth of dense ZnO(0001) and ZnO (1120) films via MOVPE on selected ZnO substrates

Journal of Crystal Growth, 283(02-Jan), 147–155.

Intersecting basal plane and prismatic stacking fault structures and their formation mechanisms in GaN

Journal of Applied Physics, 98(6).

Local strain, defects, and crystallographic tilt in GaN(0001) layers grown by maskless pendeo-epitaxy from x-ray microdiffraction

Journal of Applied Physics, 97(1).

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts

Washington, DC: U.S. Patent and Trademark Office.

On the microstructure of AlxGa1-xN layers grown on 6H-SiC(0001) substrates

Journal of Applied Physics, 97(8).

P-type doping utilizing nitrogen and Mn doping of ZnO using MOCVD for ultraviolet lasers and spintronic applications

Egerton, E. J., Sood, A. K., Singh, R., Puri, Y. R., Davis, R. F., Pierce, J., … Steiner, T. (2005, June). JOURNAL OF ELECTRONIC MATERIALS, Vol. 34, pp. 949–952.

Second gallium nitride layers that extend into trenches in first gallium nitride layers

Washington, DC: U.S. Patent and Trademark Office.

Step-controlled strain relaxation in the vicinal surface epitaxy of nitrides

Physical Review Letters, 95(8).

Structural TEM study of nonpolar a-plane gallium nitride grown on (1120) 4H-SiC by organometallic vapor phase epitaxy

Physical Review. B, Condensed Matter and Materials Physics, 71(23).

Structural defects and luminescence features in heteroepitaxial GaN grown on on-axis and misoriented substrates

Journal of Applied Physics, 97(11).

Structural, microstructural, and electrical properties of gold films and Schottky contacts on remote plasma-cleaned, n-type ZnO{0001} surfaces

JOURNAL OF APPLIED PHYSICS, 97(10).

The effects of oxygen, nitrogen, and hydrogen annealing on Mg acceptors in GaN as monitored by electron paramagnetic resonance spectroscopy

JOURNAL OF ELECTRONIC MATERIALS, 34(1), 34–39.

The formation of epitaxial hexagonal boron nitride on nickel substrates

JOURNAL OF ELECTRONIC MATERIALS, 34(12), 1558–1564.

White X-ray microbeam analysis of strain and crystallographic tilt in GaN layers grown by maskless pendeoepitaxy

Physica Status Solidi. A, Applications and Materials Science, 202(5), 732–738.

Growth and characterization of ZnO thin films on GaN epilayers

JOURNAL OF ELECTRONIC MATERIALS, 33(7), 826–832.

Growth of homoepitaxial films on 4H-SiC(1120) and 8 degrees off-axis 4H-SiC(0001) substrates and their characterization

In J. C. R. Madar & E. Blanquet (Eds.), Silicon carbide and related materials 2003: ICSCRM2003: Proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003 (Vol. 457-460, pp. 221–224). Utikon-Zurich, Switzerland: Trans Tech Publications.

Homoepitaxial growth of (0001)- and (000(1)over-bar)-oriented ZnO thin films via metalorganic vapor-phase epitaxy and their characterization

JOURNAL OF CRYSTAL GROWTH, 265(3-4), 390–398.

In situ cleaning and characterization of oxygen- and zinc-terminated, n-type, ZnO{0001} surfaces

JOURNAL OF APPLIED PHYSICS, 95(10), 5856–5864.

In situ cleaning of GaN(0001) surfaces in a metalorganic vapor phase epitaxy environment

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 22(5), 2077–2082.

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

Photo-electron emission and atomic force microscopies of the hydrogen etched 6H-SiC(0001) surface and the initial growth of GaN and AlN

APPLIED SURFACE SCIENCE, 242(3-4), 428–436.

Preparation and characterization of atomically clean, stoichlometric surfaces of AIN(0001)

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 23(1), 72–77.

Selective etching of GaN from AlGaN/GaN and AlN/GaN structures

MRS Internet Journal of Nitride Semiconductor Research, 9(5).

Surface-roughness correlations in homoepitaxial growth of GaN(0001) films by NH3 supersonic jet epitaxy

JOURNAL OF APPLIED PHYSICS, 96(8), 4556–4562.

Band offset measurements of the GaN (0001)/HfO2 interface

Journal of Applied Physics, 94(11), 7155–7158.

Band offset measurements of the Si3N4/GaN (0001) interface

JOURNAL OF APPLIED PHYSICS, 94(6), 3949–3954.

Characterization of hydrogen etched 6H-SiC(0001) substrates and subsequently grown AlN films

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(2), 394–400.

Domain structures in 6H-SiC wafers and their effect on the microstructures of GaN films grown on AlN and Al0.2Ga0.8N buffer layers

JOURNAL OF CRYSTAL GROWTH, 258(1-2), 75–83.

Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag

JOURNAL OF APPLIED PHYSICS, 94(6), 3939–3948.

Electron energy distribution during high-field transport in AlN

JOURNAL OF APPLIED PHYSICS, 93(5), 2765–2771.

Evolution and growth of ZnO thin films on GaN(0001) epilayers via metalorganic vapor phase epitaxy

JOURNAL OF CRYSTAL GROWTH, 257(3-4), 255–262.

GaN evaporation and enhanced diffusion of Ar during high-temperature ion implantation

JOURNAL OF APPLIED PHYSICS, 93(9), 5140–5142.

Gallium nitride and related materials: challenges in materials processing

ACTA MATERIALIA, 51(19), 5961–5979.

Gallium nitride semiconductor structure including laterally offset patterned layers

Washington, DC: U.S. Patent and Trademark Office.

Gallium nitride semiconductor structures fabricated by pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts

Washington, DC: U.S. Patent and Trademark Office.

Gallium nitride semiconductor structures including lateral gallium nitride layers

Washington, DC: U.S. Patent and Trademark Office.

Gold Schottky contacts on oxygen plasma-treated, n-type ZnO(000(1)over-bar)

APPLIED PHYSICS LETTERS, 82(3), 400–402.

HVPE-GaN: comparison of emission properties and microstructure of films grown on different laterally overgrown templates

Diamond and Related Materials, 13(4-8), 1125–1129.

Helical-type surface defects in GaN thin films epitaxially grown on GaN templates at reduced temperatures

JOURNAL OF CRYSTAL GROWTH, 253(1-4), 16–25.

Helical-type surface defects in InGaN thin films epitaxially grown on GaN templates at reduced temperatures

THIN SOLID FILMS, 437(1-2), 140–149.

High performance 0.14 mu m gate-length AlGaN/GaN power HEMTs on SiC

IEEE ELECTRON DEVICE LETTERS, 24(11), 677–679.

Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)

JOURNAL OF APPLIED PHYSICS, 93(7), 3995–4004.

Methods of fabricating gallium nitride microelectronic layers on silicon layers

Washington, DC: U.S. Patent and Trademark Office.

Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth

Washington, DC: U.S. Patent and Trademark Office.

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

Microscopic mapping of strain relaxation in uncoalesced pendeoepitaxial GaN on SiC

Physical Review. B, Condensed Matter and Materials Physics, 67(4), 045321–045321.

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates

Washington, DC: U.S. Patent and Trademark Office.

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

Preparation and characterization of atomically clean, stoichiometric surfaces of n- and p-type GaN(0001)

JOURNAL OF APPLIED PHYSICS, 94(5), 3163–3172.

Response to "Comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' [J. Appl. Phys. 91, 732 (2002)]"

Hartlieb, P. J., Roskowski, A., Davis, R. F., Platow, W., & Nemanich, R. J. (2003, March 15). JOURNAL OF APPLIED PHYSICS, Vol. 93, pp. 3679–3679.

Surface morphology and strain of GaN layers grown using 6H-SiC(0001) substrates with different buffer layers

JOURNAL OF CRYSTAL GROWTH, 253(1-4), 129–141.

Application of Nomarski interference contrast microscopy as a thickness monitor in the preparation of transparent, SiG-based, cross-sectional TEM samples

ULTRAMICROSCOPY, 92(3-4), 265–271.

Chemical, electrical, and structural properties of Ni/Au contacts on chemical vapor cleaned p-type GaN

JOURNAL OF APPLIED PHYSICS, 91(11), 9151–9160.

Cross-sectional imaging of pendeo-epitaxial GaN using continuous-wave two-photon microphotoluminescence

APPLIED PHYSICS LETTERS, 81(11), 1984–1986.

Effect of implantation temperature on damage accumulation in Ar-implanted GaN

MRS Internet Journal of Nitride Semiconductor Research, 7(9), 9–1.

Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor-cleaned GaN thin films

JOURNAL OF APPLIED PHYSICS, 91(4), 2133–2137.

Electron-beam-induced optical memory effects in GaN

APPLIED PHYSICS LETTERS, 80(15), 2675–2677.

Gallium nitride materials - Progress, status, and potential roadblocks

PROCEEDINGS OF THE IEEE, 90(6), 993–1005.

Growth and decomposition of bulk GaN: role of the ammonia/nitrogen ratio

JOURNAL OF CRYSTAL GROWTH, 236(4), 529–537.

High temperature nucleation and growth of GaN crystals from the vapor phase

JOURNAL OF CRYSTAL GROWTH, 241(4), 404–415.

High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates

Washington, DC: U.S. Patent and Trademark Office.

Investigations regarding the maskless pendeo-epitaxial growth of GaN films prior to coalescence

IEEE JOURNAL OF QUANTUM ELECTRONICS, 38(8), 1006–1016.

Maskless pendeo-epitaxial growth of GaN films

Roskowski, A. M., Preble, E. A., Einfeldt, S., Miraglia, P. M., & Davis, R. F. (2002, May). JOURNAL OF ELECTRONIC MATERIALS, Vol. 31, pp. 421–428.

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts

Washington, DC: U.S. Patent and Trademark Office.

Methods of forming compound semiconductor layers using spaced trench arrays and semiconductor substrates formed thereby

Washington, DC: U.S. Patent and Trademark Office.

Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces

JOURNAL OF APPLIED PHYSICS, 91(2), 732–738.

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Washington, DC: U.S. Patent and Trademark Office.

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, ang gallium nitratde semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

Probing the AlxGa1-xN spatial alloy fluctuation via UV-photoluminescence and Raman at submicron scale

APPLIED PHYSICS LETTERS, 81(22), 4186–4188.

Reduction in dislocation density and strain in GaN thin films grown via maskless pendeo-epitaxy

Opto-Electronics Review, 10(4), 261–270.

Strain and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeoepitaxy

APPLIED PHYSICS LETTERS, 80(6), 953–955.

Strain in cracked AlGaN layers

JOURNAL OF APPLIED PHYSICS, 92(1), 118–123.

Supersonic jet epitaxy of gallium nitride using triethylgallium and ammonia

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(1), 294–301.

Surface instability and associated roughness during conventional and pendeo-epitaxial growth of GaN(0001) films via MOVPE

JOURNAL OF CRYSTAL GROWTH, 241(1-2), 141–150.

The influence of band offsets on the IV characteristics for GaN/SiC heterojunctions

SOLID-STATE ELECTRONICS, 46(6), 827–835.

TiC nanoisland formation on 6H-SiC(0001)(Si)

JOURNAL OF APPLIED PHYSICS, 91(9), 6081–6084.

Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates

Davis, R. F., Gehrke, T., Linthicum, K. J., Preble, E., Rajagopal, P., Ronning, C., … Mehregany, M. (2001, October). JOURNAL OF CRYSTAL GROWTH, Vol. 231, pp. 335–341.

Growth of epitaxial CoSi2 on 6H-SiC(0001)(Si)

JOURNAL OF APPLIED PHYSICS, 90(12), 5924–5927.

In situ cleaning of GaN/6H-SiC substrates in NH3

JOURNAL OF CRYSTAL GROWTH, 222(3), 452–458.

Ion implantation into gallium nitride

[Review of ]. PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 351(5), 349–385.

Kinetics and gas-surface dynamics of GaN homoepitaxial growth using NH3-seeded supersonic molecular beams

SURFACE SCIENCE, 494(1), 28–42.

Lateral epitaxy and dislocation density reduction in selectively grown GaN structures

JOURNAL OF CRYSTAL GROWTH, 222(4), 706–718.

Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby

Washington, DC: U.S. Patent and Trademark Office.

Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

Methods of forming a plurality of semiconductor layers using spaced trench arrays

Washington, DC: U.S. Patent and Trademark Office.

Optical metastability of subband gap (2.2 eV) yellow luminescence in GaN

APPLIED PHYSICS LETTERS, 79(3), 281–283.

Pendeo-epitaxial growth and characterization of thin films of gallium nitride and related materials on SiC(0001) and si(111) substrates

Zeitschrift Fur MetallkundeAmerican Journal of Physiology, 92(2), 163–166.

Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization

Davis, R. F., Gehrke, T., Linthicum, K. J., Zheleva, T. S., Preble, E. A., Rajagopal, P., … Mehregany, M. (2001, May). JOURNAL OF CRYSTAL GROWTH, Vol. 225, pp. 134–140.

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Washington, DC: U.S. Patent and Trademark Office.

Photoluminescence and electrical characteristics of the two-dimensional electron gas in Si delta-doped GaN layers

APPLIED PHYSICS LETTERS, 78(12), 1688–1690.

Polarization charges and polarization-induced barriers in AlxGa1-xN/GaN and InyGa1-yN/GaN heterostructures

APPLIED PHYSICS LETTERS, 79(18), 2916–2918.

Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates

MRS Internet Journal of Nitride Semiconductor Research, 6(14), 1–16.

Strain and dislocation reduction in maskless pendeo-epitaxy GaN thin films

Physica Status Solidi. A, Applications and Materials Science, 188(2), 729–732.

Time-resolved photoluminescence in strained GaN layers

Physica Status Solidi. A, Applications and Materials Science, 183(1), 151–155.

Time-resolved spectroscopy of strained GaN/AlN/6H-SiC heterostructures grown by metalorganic chemical vapor deposition

APPLIED PHYSICS LETTERS, 78(8), 1062–1064.

Crystallinity and microstructures of aluminum nitride films deposited on Si(111) substrates

SOLID-STATE ELECTRONICS, 44(4), 747–755.

Dry etching and metallization schemes in a GaN/SiC heterojunction device process

Materials Science Forum, 338(3), 1049–1052.

Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer

Washington, DC: U.S. Patent and Trademark Office.

Growth and characterization of GaN single crystals

JOURNAL OF CRYSTAL GROWTH, 208(1-4), 100–106.

Growth and characterization of piezoelectrically enhanced acceptor-type AlGaN/GaN heterostructures

MRS Internet Journal of Nitride Semiconductor Research, 5, U520–525.

Growth and microstructure of InxGa1-xN films grown on SiC substrates via low pressure metalorganic vapor phase epitaxy

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 3(3), 163–171.