Works (268)

2015 journal article

Band alignment at AlN/Si (111) and (001) interfaces

Journal of Applied Physics, 118(4).

By: S. King, R. Nemanich & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2015 journal article

Cleaning of pyrolytic hexagonal boron nitride surfaces

Surface and Interface Analysis, 47(7), 798–803.

By: S. King, R. Nemanich & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2015 journal article

Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 33(5).

By: S. King, S. Tanaka, R. Davis & R. Nemanich

Source: NC State University Libraries
Added: August 6, 2018

2015 journal article

Hydrogen desorption kinetics for aqueous hydrogen fluoride and remote hydrogen plasma processed silicon (001) surfaces

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 33(5).

By: S. King, R. Davis, R. Carter, T. Schneider & R. Nemanich

Source: NC State University Libraries
Added: August 6, 2018

2015 journal article

Photoemission investigation of the Schottky barrier at the Sc/3C-SiC (111) interface

Physica Status Solidi. B, Basic Solid State Physics, 252(2), 391–396.

By: S. King, R. Nemanich & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2014 journal article

Desorption and sublimation kinetics for fluorinated aluminum nitride surfaces

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 32(5).

By: S. King, R. Davis & R. Nemanich

Source: NC State University Libraries
Added: August 6, 2018

2014 journal article

Gas source molecular beam epitaxy of scandium nitride on silicon carbide and gallium nitride surfaces

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 32(6).

By: S. King, R. Davis & R. Nemanich

Source: NC State University Libraries
Added: August 6, 2018

2014 journal article

Valence and conduction band alignment at ScN interfaces with 3C-SiC (111) and 2H-GaN (0001)

Applied Physics Letters, 105(8).

By: S. King, R. Nemanich & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2010 journal article

Surface and defect microstructure of GaN and AlN layers grown on hydrogen-etched 6H-SiC(0001) substrates

Acta Materialia, 58(6), 2165–2175.

By: Z. Reitmeier, S. Einfeldt, R. Davis, X. Zhang, X. Fang & S. Mahajan

Source: NC State University Libraries
Added: August 6, 2018

2009 journal article

On the origin of aluminum-related cathodoluminescence emissions from sublimation grown 4H-SiC(11(2)over-bar0)

Applied Surface Science, 255(13-14), 6535–6539.

By: S. Bishop, C. Reynolds, J. Molstad, F. Stevie, D. Barnhardt & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2009 journal article

Sequential growths of AlN and GaN layers on as-polished 6H-SiC(0001) substrates

Acta Materialia, 57(14), 4001–4008.

By: Z. Reitmeier, S. Einfeldt, R. Davis, X. Zhang, X. Fang & S. Mahajan

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Kinetics of Ga and In desorption from (7x7)Si(111) and (3x3)6H-SiC(0001) surfaces

Surface Science, 602(2), 405–415.

By: S. King, R. Davis & R. Nemanich

Source: NC State University Libraries
Added: August 6, 2018

2008 patent

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Washington, DC: U.S. Patent and Trademark Office.

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Sublimation growth of an in-situ-deposited layer in SiC chemical vapor deposition on 4H-SiC(1 1 (2)over-bar 0)

Journal of Crystal Growth, 311(1), 72–78.

By: S. Bishop, C. Reynolds, Z. Liliental-Weber, Y. Uprety, C. Ebert, F. Stevie, J. Park, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Characterization of growth defects in thin GaN layers with X-ray microbeam

Physica Status Solidi. B, Basic Solid State Physics, 244(5), 1735–1742.

By: R. Barabash, G. Ice, C. Roder, J. Budai, W. Liu, S. Figge, S. Einfeldt, D. Hommel, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Electrical and optical properties of ZnO (000(1)over-bar) wafers implanted with argon

Journal of Applied Physics, 101(2).

By: B. Adekore, R. Davis & D. Barlage

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H-SiC (11(2)over-bar0)

Journal of Crystal Growth, 300(1), 83–89.

By: S. Bishop, J. Park, J. Gu, B. Wagner, Z. Reltmeier, D. Batchelor, D. Zakharov, Z. Liliental-Weber, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2007 patent

Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches

Washington, DC: U.S. Patent and Trademark Office.

By: T. Zheleva, D. Thomson, S. Smith, K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Nitrogen acceptors in bulk ZnO (000(1)over-bar)) substrates and homoepitaxial ZnO films

Journal of Applied Physics, 102(2).

By: B. Adekore, J. Pierce, R. Davisb, D. Barlage & J. Muth

Source: NC State University Libraries
Added: August 6, 2018

2007 patent

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

By: T. Gehrke, K. Linthicum & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Phonon-assisted stimulated emission from pendeoepitaxy GaN stripes grown on 6H-SiC substrates

Applied Physics Letters, 91(5).

By: Y. Chang, Y. Li, D. Thomson & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2006 journal article

Characterization of crystallographic properties and defects via X-ray microdiffraction in GaN (0001) layers

Physica Status Solidi. A, Applications and Materials Science, 203(1), 142–148.

By: R. Barabash, O. Barabash, G. Ice, C. Roder, S. Figge & S. Einfeldt

Source: NC State University Libraries
Added: August 6, 2018

2006 journal article

Effect of thermal annealing on the metastable optical properties of GaN thin films

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 24(4), 1051–1054.

By: Y. Chang, R. Kolbas, Z. Reitmeier & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2006 journal article

Growth and characterization of pendeo-epitaxial GaN(11(2)over-bar0) on 4H-SiC(11(2)over-bar0) substrates

Journal of Crystal Growth, 290(2), 504–512.

By: B. Wagner, Z. Reitmeier, J. Park, D. Bachelor, D. Zakharov, Z. Liliental-Weber, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2006 journal article

Growth and fabrication of AlGaN-based ultraviolet light emitting diodes on 6H-SiC(0001) substrates and the effect of carrier-blocking layers on their emission characteristics

Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 127(2-3), 169–179.

Source: NC State University Libraries
Added: August 6, 2018

2006 journal article

Growth and structural investigations of epitaxial hexagonal YMnO3 thin films deposited on wurtzite GaN(001) substrates

Thin Solid Films, 515(4), 1807–1813.

By: K. Balasubramanian, K. Chang, F. Mohammad, L. Porter, P. Salvador, J. DiMaio, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2006 journal article

Mapping misorientation and crystallographic tilt in GaN layers via polychromatic microdiffraction

Physica Status Solidi. B, Basic Solid State Physics, 243(7), 1508–1513.

By: R. Barabash, G. Ice, W. Liu, C. Roder, S. Figge, S. Einfeldt, D. Hommel, T. Katona ...

Source: NC State University Libraries
Added: August 6, 2018

2006 patent

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2006 journal article

Origins of parasitic emissions from 353 nm AlGaN-based ultraviolet light emitting diodes over SiC substrates

Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 45(5A), 4083–4086.

By: J. Park, D. Fothergill, P. Wellenius, S. Bishop, J. Muth & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

A printable form of single-crystalline gallium nitride for flexible optoelectronic systems

Small (Weinheim An Der Bergstrasse, Germany), 1(12), 1164–1168.

By: K. Lee, J. Lee, H. Hwang, Z. Reitmeier, R. Davis, J. Rogers, R. Nuzzo

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Effect of carrier blocking layers on the emission characteristics of AlGaN-based ultraviolet light emitting diodes

Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 44(10), 7254–7259.

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Growth of dense ZnO films via MOVPE on GaN(0001) epilayers using a low/high-temperature sequence

Journal of Crystal Growth, 277(38356), 345–351.

By: J. Pierce, B. Adekore, R. Davis & F. Stevie

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Homoepitaxial growth of dense ZnO(0001) and ZnO (1120) films via MOVPE on selected ZnO substrates

Journal of Crystal Growth, 283(02-Jan), 147–155.

By: J. Pierce, B. Adekore, R. Davis & F. Stevie

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Intersecting basal plane and prismatic stacking fault structures and their formation mechanisms in GaN

Journal of Applied Physics, 98(6).

By: J. Bai, X. Huang, M. Dudley, B. Wagner, R. Davis, L. Wu, E. Sutter, Y. Zhu, B. Skromme

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Local strain, defects, and crystallographic tilt in GaN(0001) layers grown by maskless pendeo-epitaxy from x-ray microdiffraction

Journal of Applied Physics, 97(1).

By: R. Barabash, G. Ice, W. Liu, S. Einfeldt, A. Roskowski & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2005 patent

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

On the microstructure of AlxGa1-xN layers grown on 6H-SiC(0001) substrates

Journal of Applied Physics, 97(8).

By: R. Kroger, S. Einfeldt, R. Chierchia, D. Hommel, Z. Reitmeier, R. Davis, Q. Liu

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

P-type doping utilizing nitrogen and Mn doping of ZnO using MOCVD for ultraviolet lasers and spintronic applications

Journal of Electronic Materials, 34(6), 949–952.

By: E. Egerton, A. Sood, R. Singh, Y. Puri, R. Davis, J. Pierce, D. Look, T. Steiner

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Photo-electron emission and atomic force microscopies of the hydrogen etched 6H-SiC(0001) surface and the initial growth of GaN and AlN

Applied Surface Science, 242(04-Mar), 428–436.

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Preparation and characterization of atomically clean, stoichlometric surfaces of AIN(0001)

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 23(1), 72–77.

By: W. Mecouch, B. Wagner, Z. Reitmeier, R. Davis, C. Pandarinath, B. Rodriguez, R. Nemanich

Source: NC State University Libraries
Added: August 6, 2018

2005 patent

Second gallium nitride layers that extend into trenches in first gallium nitride layers

Washington, DC: U.S. Patent and Trademark Office.

By: T. Zheleva, D. Thomson, S. Smith, K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Step-controlled strain relaxation in the vicinal surface epitaxy of nitrides

Physical Review Letters, 95(8).

By: X. Huang, J. Bai, M. Dudley, B. Wagner, R. Davis & Y. Zhu

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Structural TEM study of nonpolar a-plane gallium nitride grown on (1120) 4H-SiC by organometallic vapor phase epitaxy

Physical Review. B, Condensed Matter and Materials Physics, 71(23).

By: D. Zakharov, Z. Liliental-Weber, B. Wagner, Z. Reitmeier, E. Preble & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Structural defects and luminescence features in heteroepitaxial GaN grown on on-axis and misoriented substrates

Journal of Applied Physics, 97(11).

By: J. Bai, M. Dudley, L. Chen, B. Skromme, B. Wagner, R. Davis, U. Chowdhury, R. Dupuis

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Structural, microstructural, and electrical properties of gold films and Schottky contacts on remote plasma-cleaned, n-type ZnO{0001} surfaces

Journal of Applied Physics, 97(10).

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

The effects of oxygen, nitrogen, and hydrogen annealing on Mg acceptors in GaN as monitored by electron paramagnetic resonance spectroscopy

Journal of Electronic Materials, 34(1), 34–39.

By: D. Matlock, M. Zvanut, H. Wang, J. Dimaio, R. Davis, J. Van Nostrand, R. Henry, D. Koleske, A. Wickenden

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

The formation of epitaxial hexagonal boron nitride on nickel substrates

Journal of Electronic Materials, 34(12), 1558–1564.

By: P. Yang, J. Prater, W. Liu, J. Glass & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

White X-ray microbeam analysis of strain and crystallographic tilt in GaN layers grown by maskless pendeoepitaxy

Physica Status Solidi. A, Applications and Materials Science, 202(5), 732–738.

By: R. Barabash, G. Ice, W. Liu, S. Einfeldt, D. Hommel, A. Roskowski, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Growth and characterization of ZnO thin films on GaN epilayers

Journal of Electronic Materials, 33(7), 826–832.

By: T. Smith, H. McLean, D. Smith, P. Miraglia, A. Roskowski & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2004 chapter

Growth of homoepitaxial films on 4H-SiC(1120) and 8 degrees off-axis 4H-SiC(0001) substrates and their characterization

In Silicon carbide and related materials 2003: ICSCRM2003: Proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003 (Vol. 457-460, pp. 221–224). Utikon-Zurich, Switzerland: Trans Tech Publications.

By: S. Bishop, E. Preble, C. Hallin, A. Henry, L. Storasta, H. Jacobson, B. Wagner, Z. Reitmeier, E. Janzen, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

HVPE-GaN: comparison of emission properties and microstructure of films grown on different laterally overgrown templates

Diamond and Related Materials, 13(08-Apr), 1125–1129.

By: T. Paskova, E. Valcheva, P. Paskov, B. Monemar, A. Roskowski, R. Davis, B. Beaumont, P. Gibart

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Homoepitaxial growth of (0001)- and (000(1)over-bar)-oriented ZnO thin films via metalorganic vapor-phase epitaxy and their characterization

Journal of Crystal Growth, 265(3/4), 390–398.

By: T. Smith, H. McLean, D. Smith & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

In situ cleaning and characterization of oxygen- and zinc-terminated, n-type, ZnO{0001} surfaces

Journal of Applied Physics, 95(10), 5856–5864.

By: B. Coppa, C. Fulton, P. Hartlieb, R. Davis, B. Rodriguez, B. Shields, R. Nemanich

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

In situ cleaning of GaN(0001) surfaces in a metalorganic vapor phase epitaxy environment

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 22(5), 2077–2082.

By: Z. Reitmeier, J. Park, W. Mecouch & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2004 patent

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

By: T. Gehrke, K. Linthicum & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Selective etching of GaN from AlGaN/GaN and AlN/GaN structures

MRS Internet Journal of Nitride Semiconductor Research, 9(5).

By: J. Grenko, C. Reynolds, R. Schlesser, K. Bachmann, Z. Rietmeier, R. Davis, Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Surface-roughness correlations in homoepitaxial growth of GaN(0001) films by NH3 supersonic jet epitaxy

Journal of Applied Physics, 96(8), 4556–4562.

By: N. Smith, H. Lamb, A. McGinnis & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Band offset measurements of the GaN (0001)/HfO2 interface

Journal of Applied Physics, 94(11), 7155–7158.

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Band offset measurements of the Si3N4/GaN (0001) interface

Journal of Applied Physics, 94(6), 3949–3954.

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Characterization of hydrogen etched 6h-sic(0001) substrates and subsequently grown AlN films

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 21(2), 394–400.

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Domain structures in 6H-SiC wafers and their effect on the microstructures of GaN films grown on AlN and Al0.2Ga0.8N buffer layers

Journal of Crystal Growth, 258(1/2), 75–83.

By: E. Preble, P. Miraglia, A. Roskowski, W. Vetter, M. Dudley & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag

Journal of Applied Physics, 94(6), 3939–3948.

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Electron energy distribution during high-field transport in AlN

Journal of Applied Physics, 93(5), 2765–2771.

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Evolution and growth of ZnO thin films on GaN(0001) epilayers via metalorganic vapor phase epitaxy

Journal of Crystal Growth, 257(3/4), 255–262.

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

GaN evaporation and enhanced diffusion of Ar during high- temperature ion implantation

Journal of Applied Physics, 93(9), 5140–5142.

By: I. Usov, N. Parikh, Y. Kudriavtsev, R. Asomoza, Z. Reitmeier & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Gallium nitride and related materials: challenges in materials processing

Acta Materialia, 51(19), 5961–5979.

By: R. Davis, S. Einfeldt, E. Preble, A. Roskowski, Z. Reitmeier & P. Miraglia

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Gallium nitride semiconductor structure including laterally offset patterned layers

Washington, DC: U.S. Patent and Trademark Office.

By: R. Davis & O. Nam

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Gallium nitride semiconductor structures fabricated by pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Gallium nitride semiconductor structures including lateral gallium nitride layers

Washington, DC: U.S. Patent and Trademark Office.

By: R. Davis, O. Nam, T. Zheleva & M. Bremser

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Gold Schottky contacts on oxygen plasma-treated, n-type ZnO(000(1)over-bar)

Applied Physics Letters, 82(3), 400–402.

By: B. Coppa, R. Davis & R. Nemanich

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Helical-type surface defects in GaN thin films epitaxially grown on GaN templates at reduced temperatures

Journal of Crystal Growth, 253(1-4), 16–25.

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Helical-type surface defects in InGaN thin films epitaxially grown on GaN templates at reduced temperatures

Thin Solid Films, 437(37623), 140–149.

By: P. Miraglia, E. Preble, A. Roskowski, S. Einfeldt, S. Lim, Z. Liliental-Weber, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

High performance 0.14 mu m gate-length AlGaN/GaN power HEMTs on SiC

IEEE Electron Device Letters, 24(11), 677–679.

By: G. Jessen, R. Fitch, J. Gillespie, G. Via, N. Moser, M. Yannuzzi, A. Crespo, J. Sewell ...

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)

Journal of Applied Physics, 93(7), 3995–4004.

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Methods of fabricating gallium nitride microelectronic layers on silicon layers

Washington, DC: U.S. Patent and Trademark Office.

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth

Washington, DC: U.S. Patent and Trademark Office.

By: R. Davis, O. Nam, T. Zheleva & M. Bremser

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Microscopic mapping of strain relaxation in uncoalesced pendeoepitaxial GaN on SiC

Physical Review. B, Condensed Matter and Materials Physics, 67(4), 045321–045321.

By: U. Schwarz, P. Schuck, M. Mason, R. Grober, A. Roskowski, S. Einfeldt, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates

Washington, DC: U.S. Patent and Trademark Office.

By: T. Gehrke, K. Linthicum & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

By: T. Gehrke, K. Linthicum & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Preparation and characterization of atomically clean, stoichiometric surfaces of n- and p-type GaN(0001)

Journal of Applied Physics, 94(5), 3163–3172.

By: K. Tracy, W. Mecouch, R. Davis & R. Nemanich

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Response to 'Comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' [J. Appl. Phys. 91, 732 (2002)]'

Journal of Applied Physics, 93(6), 3679.

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Supersonic jet epitaxy of gallium nitride using triethylgallium and ammonia

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 21(1), 294–301.

By: A. McGinnis, D. Thomson, A. Banks, E. Preble, R. Davis & H. Lamb

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Surface morphology and strain of GaN layers grown using 6H- SiC(0001) substrates with different buffer layers

Journal of Crystal Growth, 253(1-4), 129–141.

By: S. Einfeldt, Z. Reitmeier & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Application of Nomarski interference contrast microscopy as a thickness monitor in the preparation of transparent, SiG-based, cross-sectional TEM samples

Ultramicroscopy, 92(3-4), 265–271.

By: E. Preble, H. McLean, S. Kiesel, P. Miraglia, M. Albrecht & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Chemical, electrical, and structural properties of Ni/Au contacts on chemical vapor cleaned p-type GaN

Journal of Applied Physics, 91(11), 9151–9160.

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Cross-sectional imaging of pendeo-epitaxial GaN using continuous-wave two-photon microphotoluminescence

Applied Physics Letters, 81(11), 1984–1986.

By: P. Schuck, R. Grober, A. Roskowski, S. Einfeldt & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Effect of implantation temperature on damage accumulation in Ar-implanted GaN

MRS Internet Journal of Nitride Semiconductor Research, 7(9), 9–1.

By: I. Usov, N. Parikh, D. Thomson & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor- cleaned GaN thin films

Journal of Applied Physics, 91(4), 2133–2137.

By: E. Preble, K. Tracy, S. Kiesel, H. McLean, P. Miraglia, R. Nemanich, R. Davis, M. Albrecht, D. Smith

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Electron-beam-induced optical memory effects in GaN

Applied Physics Letters, 80(15), 2675–2677.

By: Y. Chang, A. Cai, M. Johnson, J. Muth, R. Kolbas, Z. Reitmeier, S. Einfeldt, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Gallium nitride materials - Progress, status, and potential roadblocks

Proceedings of the IEEE, 90(6), 993–1005.

By: R. Davis, A. Roskowski, E. Preble, J. Speck, F. B., G. J. A., . E. R., W. Carlos

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Growth and decomposition of bulk GaN: role of the ammonia/nitrogen ratio

Journal of Crystal Growth, 236(4), 529–537.

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

High temperature nucleation and growth of GaN crystals from the vapor phase

Journal of Crystal Growth, 241(4), 404–415.

Source: NC State University Libraries
Added: August 6, 2018

2002 patent

High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates

Washington, DC: U.S. Patent and Trademark Office.

By: T. Gehrke, K. Linthicum, R. Davis & D. Thomson

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Investigations regarding the maskless pendeo-epitaxial growth of GaN films prior to coalescence

IEEE Journal of Quantum Electronics, 38(8), 1006–1016.

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Maskless pendeo-epitaxial growth of GaN films

Journal of Electronic Materials, 31(5), 421–428.

By: A. Roskowski, E. Preble, S. Einfeldt, P. Miraglia & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 patent

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 patent

Methods of forming compound semiconductor layers using spaced trench arrays and semiconductor substrates formed thereby

Washington, DC: U.S. Patent and Trademark Office.

By: T. Gehrke, K. Linthicum & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces

Journal of Applied Physics, 91(2), 732–738.

Source: NC State University Libraries
Added: August 6, 2018

2002 patent

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Washington, DC: U.S. Patent and Trademark Office.

Source: NC State University Libraries
Added: August 6, 2018

2002 patent

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, ang gallium nitratde semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke, D. Thomson, E. Carlson, P. Rajagopal & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 patent

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Probing the AlxGa1-xN spatial alloy fluctuation via UV- photoluminescence and Raman at submicron scale

Applied Physics Letters, 81(22), 4186–4188.

By: L. Bergman, X. Chen, D. Mcilroy & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Reduction in dislocation density and strain in GaN thin films grown via maskless pendeo-epitaxy

Opto-Electronics Review, 10(4), 261–270.

By: A. Roskowski, E. Preble, S. Einfeldt, P. Miraglia, J. Schuck, R. Grober, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Strain and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeoepitaxy

Applied Physics Letters, 80(6), 953–955.

By: S. Einfeldt, A. Roskowski, E. Preble & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Strain in cracked AlGaN layers

Journal of Applied Physics, 92(1), 118–123.

By: S. Einfeldt, M. Diesselberg, H. Heinke, D. Hommel, D. Rudloff, J. Christen, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Surface instability and associated roughness during conventional and pendeo-epitaxial growth of GaN(0001) films via MOVPE

Journal of Crystal Growth, 241(1-2), 141–150.

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

The influence of band offsets on the IV characteristics for GaN/SiC heterojunctions

Solid-State Electronics, 46(6), 827–835.

By: E. Danielsson, C. Zetterling, M. Ostling, K. Linthicum, D. Thomson, O. Nam, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

TiC nanoisland formation on 6H-SiC(0001)(Si)

Journal of Applied Physics, 91(9), 6081–6084.

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates

Journal of Crystal Growth, 231(3), 335–341.

By: R. Davis, T. Gehrke, K. Linthicum, E. Preble, P. Rajagopal, C. Ronning, C. Zorman, M. Mehregany

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Growth of epitaxial CoSi2 on 6H-SiC(0001)(Si)

Journal of Applied Physics, 90(12), 5924–5927.

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

In situ cleaning of GaN/6H-SiC substrates in NH3

Journal of Crystal Growth, 222(3), 452–458.

By: A. McGinnis, D. Thomson, R. Davis, E. Chen, A. Michel & H. Lamb

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Ion implantation into gallium nitride

Physics Reports, 351(5), 349–385.

By: C. Ronning, E. Carlson & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Kinetics and gas-surface dynamics of GaN homoepitaxial growth using NH3-seeded supersonic molecular beams

Surface Science, 494(1), 28–42.

By: A. McGinnis, D. Thomson, R. Davis, E. Chen, A. Michel & H. Lamb

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Lateral epitaxy and dislocation density reduction in selectively grown GaN structures

Journal of Crystal Growth, 222(4), 706–718.

By: T. Zheleva, O. Nam, W. Ashmawi, J. Griffin & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2001 patent

Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke, R. Davis, D. Thomson & K. Tracy

Source: NC State University Libraries
Added: August 6, 2018

2001 patent

Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

By: T. Zheleva, D. Thomson, S. Smith, K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2001 patent

Methods of forming a plurality of semiconductor layers using spaced trench arrays

Washington, DC: U.S. Patent and Trademark Office.

By: T. Gehrke, K. Linthicum & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Optical metastability of subband gap (2.2 eV) yellow luminescence in GaN

Applied Physics Letters, 79(3), 281–283.

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Pendeo-epitaxial growth and characterization of thin films of gallium nitride and related materials on SiC(0001) and si(111) substrates

Zeitschrift Fur MetallkundeAmerican Journal of Physiology, 92(2), 163–166.

By: R. Davis, T. Gehrke, K. Linthicum, T. Zheleva, P. Rajagopal, C. Zorman, M. Mehregany

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization

Journal of Crystal Growth, 225(2-4), 134–140.

By: R. Davis, T. Gehrke, K. Linthicum, T. Zheleva, E. Preble, P. Rajagopal, C. Zorman, M. Mehregany

Source: NC State University Libraries
Added: August 6, 2018

2001 patent

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Washington, DC: U.S. Patent and Trademark Office.

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Photoluminescence and electrical characteristics of the two-dimensional electron gas in Si delta-doped GaN layers

Applied Physics Letters, 78(12), 1688–1690.

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Polarization charges and polarization-induced barriers in AlxGa1-xN/GaN and InyGa1-yN/GaN heterostructures

Applied Physics Letters, 79(18), 2916–2918.

By: L. Jia, E. Yu, D. Keogh, P. Asbeck, P. Miraglia, A. Roskowski, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates

MRS Internet Journal of Nitride Semiconductor Research, 6(14), 1–16.

By: R. Davis, T. Gehrke, K. Linthicum, P. Rajagopal, A. Roskowski, T. Zheleva, E. Preble, C. Zorman ...

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Strain and dislocation reduction in maskless pendeo-epitaxy GaN thin films

Physica Status Solidi. A, Applications and Materials Science, 188(2), 729–732.

By: A. Roskowski, P. Miraglia, E. Preble, S. Einfeldt, T. Stiles, R. Davis, J. Schuck, R. Grober, U. Schwarz

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Time-resolved photoluminescence in strained GaN layers

Physica Status Solidi. A, Applications and Materials Science, 183(1), 151–155.

By: G. Pozina, N. Edwards, J. Bergman, B. Monemar, M. Bremser & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Time-resolved spectroscopy of strained GaN/AlN/6H-SiC heterostructures grown by metalorganic chemical vapor deposition

Applied Physics Letters, 78(8), 1062–1064.

By: G. Pozina, N. Edwards, J. Bergman, T. Paskova, B. Monemar, M. Bremser, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Crystallinity and microstructures of aluminum nitride films deposited on Si(111) substrates

Solid-State Electronics, 44(4), 747–755.

By: H. Liaw, R. Doyle, P. Fejes, S. Zollner, A. Konkar, K. Linthicum, T. Gehrke, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Dry etching and metallization schemes in a GaN/SiC heterojunction device process

Materials Science Forum, 338(3), 1049–1052.

By: E. Danielsson, C. Zetterling, M. Ostling, S. Lee, K. Linthicum, D. Thomson, O. Nam, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2000 patent

Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer

Washington, DC: U.S. Patent and Trademark Office.

By: R. Davis, O. Nam, T. Zheleva & M. Bremser

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Growth and characterization of GaN single crystals

Journal of Crystal Growth, 208(1-4), 100–106.

By: C. Balkas, Z. Sitar, L. Bergman, I. Shmagin, J. Muth, R. Kolbas, R. Nemanich, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Growth and characterization of piezoelectrically enhanced acceptor-type AlGaN/GaN heterostructures

MRS Internet Journal of Nitride Semiconductor Research, 5, U520–525.

By: A. Michel, D. Hanser, R. Davis, D. Qiao, S. Lau, L. Yu, W. Sun, P. Asbeck

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Growth and microstructure of InxGa1-xN films grown on SiC substrates via low pressure metalorganic vapor phase epitaxy

Materials Science in Semiconductor Processing, 3(3), 163–171.

By: A. Hanser, A. Banks, R. Davis, B. Jahnen, M. Albrecht, W. Dorsch, S. Christiansen, H. Strunk

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Hot electron transport in AlN

Journal of Applied Physics, 88(10), 5865–5869.

By: R. Collazo, R. Schlesser, A. Roskowski, R. Davis & Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Influence of annealing conditions on dopant activation of Si+ and Mg+ implanted GaN

Materials Science Forum, 338(3), 1615–1618.

By: A. Suvkhanov, N. Parikh, I. Usov, J. Hunn, S. Withrow, D. Thomson, T. Gehrke, R. Davis, L. Krasnobaev

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery

Journal of Applied Physics, 87(5), 2149–2157.

By: C. Ronning, M. Dalmer, M. Uhrmacher, M. Restle, U. Vetter, L. Ziegeler, H. Hofsass, T. Gehrke, K. Jarrendahl, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Lateral- and pendeo-epitaxial growth and defect reduction in GaN thin films

Materials Science Forum, 338(3), 1471–1476.

By: R. Davis, O. Nam, T. Zheleva, T. Gehrke, K. Linthicum & P. Rajagopal

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Optical characterization of wide bandgap semiconductors

Thin Solid Films, 364(1-2), 98–106.

By: N. Edwards, M. Bremser, A. Batchelor, I. Buyanova, L. Madsen, S. Yoo, T. Welhkamp, K. Wilmers ...

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Pendeo-epitaxial growth and characterization of GaN and related materials on (6H-SiC(0001) and Si(111) substrates

MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U46–57.

By: R. Davis, T. Gehrke, K. Linthicum, T. Zheleva, P. Rajagopal, C. Zorman, M. Mehregany

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Pendeo-epitaxial growth of gallium nitride on silicon substrates

Journal of Electronic Materials, 29(3), 306–310.

By: T. Gehrke, K. Linthicum, E. Preble, P. Rajagopal, C. Ronning, C. Zorman, M. Mehregany, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Pendeo-epitaxy (TM) process for aluminum gallium nitride thin films on silicon carbide substrates via metalorganic chemical vapor deposition

Materials Science Forum, 338(3), 1491–1494.

By: T. Gehrke, K. Linthicum, P. Rajagopal, E. Preble, E. Carlson, B. Robin, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Photo-emission electron microscopy (PEEM) of cleaned and etched 6H-SiC(0001)

Materials Science Forum, 338(3), 353–356.

By: J. Hartman, K. Naniwae, C. Petrich, V. Ramachandran, R. Feenstra, R. Nemanich, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Photoluminescence characterization of Mg implanted GaN

MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U622–628.

By: C. Ronning, H. Hofsass, A. Stotzler, M. Deicher, E. Carlson, P. Hartlieb, T. Gehrke, P. Rajagopal, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Schottky barrier height and electron affinity of titanium on AIN

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(4), 2082–2087.

By: B. Ward, J. Hartman, E. Hurt, K. Tracy, R. Davis & R. Nemanich

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Selective etching of GaN over AlN using an inductively coupled plasma and an O-2/Cl-2/Ar chemistry

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 18(3), 879–881.

By: S. Smith, W. Lampert, P. Rajagopal, A. Banks, D. Thomson & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

SiC MISFETs with MBE-grown AlN gate dielectric

Materials Science Forum, 338(3), 1315–1318.

By: C. Zetterling, M. Ostling, H. Yano, T. Kimoto, H. Matsunami, K. Linthicum, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Zirconium mediated hydrogen outdiffusion from p-GaN

MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U491–496.

By: E. Kaminska, A. Piotrowska, A. Barcz, J. Jasinski, M. Zielinski, K. Golaszewska, R. Davis, E. Goldys, K. Tomsia

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Adhesion measurement of zirconium nitride and amorphous silicon carbide coatings to nickel and titanium alloys

Surface & Coatings Technology, 114(2-3), 156–168.

By: K. Gruss & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Characterization of Be-implanted GaN annealed at high temperatures

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.17).

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces

Microelectronic Engineering, 48(1-4), 303–306.

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces

Physica Status Solidi. A, Applications and Materials Science, 176(1), 793–796.

By: R. Therrien, G. Lucovsky & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Chemical vapor cleaning of 6H-SiC surfaces

Journal of the Electrochemical Society, 146(9), 3448–3454.

By: S. King, R. Kern, M. Benjamin, J. Barnak, R. Nemanich & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Dry ex situ cleaning processes for (0001)(Si) 6H-SiC surfaces

Journal of the Electrochemical Society, 146(7), 2648–2651.

By: S. King, R. Nemanich & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Electrochemical evaluation of molybdenum nitride electrodes in H2SO4 electrolyte

Journal of Applied Electrochemistry, 29(1), 75–80.

By: S. Roberson, D. Finello & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Electronic structure of the 0.88-eV luminescence center in electron-irradiated gallium nitride

Physical Review. B, Condensed Matter and Materials Physics, 60(3), 1746–1751.

By: I. Buyanova, M. Wagner, W. Chen, N. Edwards, B. Monemar, J. Lindstrom, M. Bremser, R. Davis, H. Amano, I. Akasaki

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Evidence for localized Si-donor state and its DX-like properties in AlGaN: Errata (vol 74, pg 3833, 1999)

Applied Physics Letters, 75(20), 3225A.

By: C. Skierbiszewski, T. Suski, M. Leszczynski, M. Shin, M. Skowronski, M. Bremser, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Evidence for localized Si-donor state and its metastable properties in AlGaN

Applied Physics Letters, 74(25), 3833–3835.

By: C. Skierbiszewski, T. Suski, M. Leszczynski, M. Shin, M. Skowronski, M. Bremser, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1-xN

Diamond and Related Materials, 8(2-5), 288–294.

By: A. Hanser, O. Nam, M. Bremser, D. Thomson, T. Gehrke, T. Zheleva, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 patent

High surface area molybdenum nitride electrodes

Washington, DC: U.S. Patent and Trademark Office.

By: S. Roberson, D. Finello & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Homoepitaxial GaN layers studied by low-energy electron microscopy, atomic force microscopy and transmission electronmicroscopy

Physica Status Solidi. A, Applications and Materials Science, 176(1), 469–473.

By: A. Pavlovska, V. Torres, J. Edwards, E. Bauer, D. Smith, R. Doak, I. Tsong, D. Thomson, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Imaging electron emission from diamond and III-V nitride surfaces with photo-electron emission microscopy

Applied Surface Science, 146(1-4), 287–294.

By: R. Nemanich, S. English, J. Hartman, A. Sowers, B. Ward, H. Ade, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Low-energy electron microscopy observations of GaN homoepitaxy using a supersonic jet source

Applied Physics Letters, 75(7), 989–991.

By: A. Pavlovska, V. Torres, E. Bauer, R. Doak, I. Tsong, D. Thomson, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Microstructure, electrical properties, and thermal stability of Ti-based ohmic contacts to n-GaN

Journal of Materials Research, 14(3), 1032–1038.

By: L. Smith, R. Davis, R. Liu, M. Kim & R. Carpenter

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Ni/Si-based contacts to GaN: Thermally activated structural transformations leading to ohmic behavior

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G9.9).

By: E. Kaminska, A. Piotrowska, J. Jasinski, J. Kozubowski, A. Barcz, K. Golaszewska, D. Thomson, R. Davis, M. Bremser

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Observation of highly dispersive surface states on GaN(0001)1x1

Physical Review. B, Condensed Matter and Materials Physics, 59(24), R15586–15589.

By: Y. Chao, C. Stagarescu, J. Downes, P. Ryan, K. Smith, D. Hanser, M. Bremser, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Pendeo-epitaxy of gallium nitride and aluminum nitride films and heterostructures on silicon carbide substrate

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.2).

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Pendeo-epitaxy of gallium nitride thin films

Applied Physics Letters, 75(2), 196–198.

Source: NC State University Libraries
Added: August 6, 2018

1999 personal communication

Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films

By: T. Zheleva, S. Smith, D. Thomson, K. Linthicum, P. Rajagopal & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Pendeo-epitaxy: A new approach for lateral growth of gallium nitride structures

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.38).

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Phonon dynamics and lifetimes of AlN and GaN crystallites

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G6.65).

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Process routes for low defect-density GaN on various substrates employing pendeo-epitaxial growth techniques

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.9).

By: K. Linthicum, T. Gehrke, D. Thomson, K. Tracy, E. Carlson, T. Smith, T. Zheleva, C. Zorman, M. Mehregany, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Raman analysis of phonon lifetimes in AlN and GaN of wurtzite structure

Physical Review. B, Condensed Matter and Materials Physics, 59(20), 12977–12982.

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Raman analysis of the E1 and A1 quasi-longitudinal optical and quasi-transverse optical modes in wurtzite AlN

Journal of Applied Physics, 85(7), 3535–3539.

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Ranges of deposition temperatures applicable for metalorganic vapor phase epitaxy of GaN films via the technique of pendeo- epitaxy

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.37).

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Relaxation phenomena in GaN/ AlN/ 6H-SiC heterostructures

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.78).

By: N. Edwards, A. Batchelor, I. Buyanova, L. Madsen, M. Bremser, R. Davis, D. Aspnes, B. Monemar

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes

Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 61-2(1999 July 30), 320–324.

By: E. Danielsson, C. Zetterling, M. Ostling, B. Breitholtz, K. Linthicum, D. Thomson, O. Nam, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Stimulated emission in GaN thin films in the temperature range of 300-700 K

Journal of Applied Physics, 85(3), 1792–1795.

By: S. Bidnyk, B. Little, T. Schmidt, Y. Cho, J. Krasinski, J. Song, B. Goldenberg, W. Yang ...

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Thermal mismatch stress relaxation via lateral epitaxy in selectively grown GaN structures

Applied Physics Letters, 74(17), 2492–2494.

By: T. Zheleva, W. Ashmawi, O. Nam & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Valence band discontinuity of the (0001) 2H-GaN/(111) 3C-SiC interface

Journal of Electronic Materials, 28(12), L34–37.

By: S. King, R. Davis, C. Ronning & R. Nemanich

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Valence band discontinuity, surface reconstruction, and chemistry of (0001), (000(1)over-bar), and (1(1)over-bar-00) 2H-AlN/6H-SiC interfaces

Journal of Applied Physics, 86(8), 4483–4490.

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Wet chemical processing of (0001)(Si) 6H-SiC hydrophobic and hydrophilic surfaces

Journal of the Electrochemical Society, 146(5), 1910–1917.

By: S. King, R. Nemanich & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms

Journal of Applied Physics, 86(10), 5584–5593.

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

A free electron laser-photoemission electron microscope system (FEL-PEEM)

Surface Review and Letters, 5(6), 1257–1268.

By: H. Ade, W. Yang, S. English, J. Hartman, R. Davis, R. Nemanich, V. Litvinenko, I. Pinayev, Y. Wu, J. Madey

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Acceptor and donor doping of AlxGa1 xN thin film alloys grown on 6H SiC(0001) substrates via metalorganic vapor phase epitaxy

Journal of Electronic Materials, 27(4), 229–232.

By: M. Bremser, W. Perry, O. Nam, D. Griffis, R. Loesing, D. Ricks, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy

Journal of Materials Research, 13(7), 1816–1822.

By: R. Kern, L. Rowland, S. Tanaka & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AlN and GaN thin films on alpha(6H) SiC substrates

Journal of Electronic Materials, 27(4), 238–245.

By: A. Hanser, C. Wolden, W. Perry, T. Zheleva, E. Carlson, A. Banks, R. Therrien, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Biaxial strain in AlxGa1-xN/GaN layers deposited on 6H-SiC

Thin Solid Films, 324(1-2), 107–114.

By: W. Perry, M. Bremser, T. Zheleva, K. Linthicum & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Cathodoluminescence studies of the deep level emission bands of AlxGa1 xN films deposited on 6H SiC(0001)

Journal of Applied Physics, 83(1), 469–475.

By: W. Perry, M. Bremser & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Characterization of zirconium nitride coatings deposited by cathodic arc sputtering

Surface & Coatings Technology, 107(2-3), 115–124.

By: K. Gruss, T. Zheleva, R. Davis & T. Watkins

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Cleaning of AlN and GaN surfaces

Journal of Applied Physics, 84(9), 5248–5260.

By: S. King, J. Barnak, M. Bremser, K. Tracy, C. Ronning, R. Davis, R. Nemanich

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Coalesced oriented diamond films on nickel

Journal of Materials Research, 13(5), 1120–1123.

By: P. Yang, C. Wolden, W. Liu, R. Schlesser, R. Davis, J. Prater, Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction

Journal of Applied Physics, 84(4), 2086–2090.

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy

Journal of Applied Physics, 84(9), 5238–5242.

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Electron emission properties of crystalline diamond and III-nitride surfaces

Applied Surface Science, 132(1998 June), 694–703.

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Fine structure of near-band-edge photoluminescence in He+- irradiated GaN grown on SiC

Applied Physics Letters, 72(22), 2838–2840.

By: V. Joshkin, C. Parker, S. Bedair, L. Krasnobaev, J. Cuomo, R. Davis, A. Suvkhanov

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Flat-flame diamond CVD: the effect of pressure and operating conditions for specific applications

Diamond and Related Materials, 7(2-5), 133–138.

By: C. Wolden, R. Davis, Z. Sitar & J. Prater

Source: NC State University Libraries
Added: August 6, 2018

1998 personal communication

Growth of Fe3N films via chemical vapor deposition of iron acetylacetonate and anhydrous ammonia

By: S. Roberson, D. Finello, A. Banks & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Growth of MoxN films via chemical vapor deposition of MoCl5 and NH3

Surface & Coatings Technology, 102(3), 256–259.

By: S. Roberson, D. Finello & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Growth of highly (0001)-oriented aluminum nitride thin films with smooth surfaces on silicon carbide by gas-source molecular beam epitaxy

Vacuum, 49(3), 189–191.

By: K. Jarrendahl, S. Smith, T. Zheleva, R. Kern & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Interfacial microstructure of Ni/Si-based ohmic contacts to GaN

Acta Physica Polonica. A, 94(3), 383–386.

By: E. Kaminska, A. Piotrowska, J. Jasinski, J. Kozubowski, A. Barcz, K. Golaszewska, M. Bremser, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Intrinsic exciton transitions in GaN

Journal of Applied Physics, 83(1), 455–461.

By: W. Shan, A. Fischer, S. Hwang, B. Little, R. Hauenstein, X. Xie, J. Song, S. Kim ...

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Investigation of optically active E-1 transversal optic phonon modes in AlxGa1-xN layers deposited on 6H-SiC substrates using infrared reflectance

Applied Physics Letters, 73(13), 1760–1762.

By: P. Wisniewski, W. Knap, J. Malzac, J. Camassel, M. Bremser, R. Davis, T. Suski

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy

Journal of Electronic Materials, 27(4), 233–237.

By: O. Nam, T. Zheleva, M. Bremser & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Lattice site location studies of ion implanted Li-8 in GaN

Journal of Applied Physics, 84(6), 3085–3089.

By: M. Dalmer, M. Restle, M. Sebastian, U. Vetter, H. Hofsass, M. Bremser, C. Ronning, R. Davis, U. Wahl, K. Bharuth-Ram

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Materials properties and characterization of SiC

Semiconductors and Semimetals, 52(1998), 1–20.

By: K. Jarrendahl & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Microstructural factors influencing the properties of high surface area molybdenum nitride films converted from molybdenum trioxide films deposited via solution spray pyrolysis

Journal of Materials Research, 13(8), 2237–2244.

By: S. Roberson, D. Finello & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Optical activation of Be implanted into GaN

Applied Physics Letters, 73(12), 1622–1624.

By: C. Ronning, E. Carlson, D. Thomson & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Optical and structural properties of lateral epitaxial overgrown GaN layers

Journal of Crystal Growth, 190(1998 June), 92–96.

By: J. Freitas, O. Nam, T. Zheleva & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Optical characterization of lateral epitaxial overgrown GaN layers

Applied Physics Letters, 72(23), 2990–2992.

By: J. Freitas, O. Nam, R. Davis, G. Saparin & S. Obyden

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Phase control of MoxN films via chemical vapor deposition

Thin Solid Films, 324(1-2), 30–36.

By: S. Roberson, D. Finello & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Phonon density of states of bulk gallium nitride

Applied Physics Letters, 73(1), 34–36.

By: J. Nipko, C. Loong, C. Balkas & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Photoelectrochemical capacitance-voltage measurements in GaN

Journal of Electronic Materials, 27(5), L26–28.

By: C. Stutz, M. Mack, M. Bremser, O. Nam, R. Davis & D. Look

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Pinholes, dislocations and strain relaxation in InGaN

MRS Internet Journal of Nitride Semiconductor Research, 3(39).

By: B. Jahnen, M. Albrecht, W. Dorsch, S. Christiansen, H. Strunk, D. Hanser, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Reaction kinetics of silicon carbide deposition by gas-source molecular-beam epitaxy

Journal of Crystal Growth, 183(4), 581–593.

By: R. Kern, S. Tanaka, L. Rowland & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films

Thin Solid Films, 313(1998 Feb.), 187–192.

By: N. Edwards, S. Yoo, M. Bremser, M. Horton, N. Perkins, T. Weeks, H. Liu, R. Stall ...

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Structural and electronic properties of boron nitride thin films containing silicon

Journal of Applied Physics, 84(9), 5046–5051.

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Surface melting in the heteroepitaxial nucleation of diamond on Ni

Journal of Crystal Growth, 187(1), 81–88.

By: P. Yang, W. Liu, R. Schlesser, C. Wolden, R. Davis, J. Prater, Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Synthesis of low oxygen concentration molybdenum nitride films

Materials Science & Engineering. A, Structural Materials: Properties, Microstructure and Processing, 248(1-2), 198–205.

By: S. Roberson, D. Finello & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

The formation of crystalline defects and crystal growth mechanism in InxGa1-xN/GaN heterostructure grown by metalorganic vapor phase epitaxy

Journal of Crystal Growth, 190(1998 June), 24–28.

By: Y. Kawaguchi, M. Shimizu, M. Yamaguchi, K. Hiramatsu, N. Sawaki, W. Taki, H. Tsuda, N. Kuwano ...

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Transmission electron microscoanalysis of the oriented diamond growth on nickel substrates

Journal of Applied Physics, 83(12), 7658–7663.

By: W. Liu, P. Yang, C. Wolden, R. Davis, J. Prater & Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Trends in residual stress for GaN/AlN/6H-SiC heterostructures

Applied Physics Letters, 73(19), 2808–2810.

By: N. Edwards, M. Bremser, R. Davis, A. Batchelor, S. Yoo, C. Karan, D. Aspnes

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

X-ray photoelectron diffraction from (3X3) and (root 3X root3)R30 degrees (001)(Si) 6H-SiC surfaces

Journal of Applied Physics, 84(11), 6042–6048.

By: S. King, C. Ronning, R. Davis, R. Busby & R. Nemanich

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Control of diamond heteroepitaxy on nickel by optical reflectance

Applied Physics Letters, 70(22), 2960–2962.

By: P. Yang, R. Schlesser, C. Wolden, W. Liu, R. Davis, Z. Sitar, J. Prater

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Deposition and doping of silicon carbide by gas-source molecular beam epitaxy

Applied Physics Letters, 71(10), 1356–1358.

By: R. Kern & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

Applied Physics Letters, 71(17), 2472–2474.

By: T. Zheleva, O. Nam, M. Bremser & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Gas-source molecular beam epitaxy of III-V nitrides

Journal of Crystal Growth, 178(1/2), 87–101.

By: R. Davis, M. Paisley, Z. Sitar, D. Kester, K. Ailey, K. Linthicum, L. Rowland, S. Tanaka, R. Kern

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Growth and doping via gas-source molecular beam epitaxy of SiC and SiC/AlN heterostructures and their microstructural and electrical characterization

Diamond and Related Materials, 6(10), 1282–1288.

By: R. Kern, K. Jarrendahl, S. Tanaka & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Growth of AlN and GaN thin films via OMVPE and gas source MBE and their characterization

Solid-State Electronics, 41(2), 129–134.

By: R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Growth of AlN, GaN and AlxGa1-xN thin films on vicinal and on-axis 6H-SiC(0001) substrates

Journal of the European Ceramic Society, 17(15-16), 1775–1779.

By: R. Davis, M. Bremser, W. Perry & K. Ailey

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Growth of gan and a1(0.2)ga(0.8)n on patterned substrates via organometallic vapor phase epitaxy

Japanese Journal of Applied Physics. Part 2, Letters, 36(5a), L532–535.

By: O. Nam, M. Bremser, B. Ward, R. Nemanich & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Growth, doping and characterization of Al(x)Ga(1-x)N thin film alloys on 6H-SiC(0001) substrates

Diamond and Related Materials, 6(2-4), 196–201.

By: M. Bremser, W. Perry, T. Zheleva, N. Edwards, O. Nam, N. Parikh, D. Aspnes, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma

Applied Physics Letters, 71(25), 3631–3633.

By: S. Smith, C. Wolden, M. Bremser, A. Hanser, R. Davis & W. Lampert

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Homoepitaxial SiC growth by molecular beam epitaxy

Physica Status Solidi. B, Basic Solid State Physics, 202(1), 379–404.

By: R. Kern, K. Jarrendahl, S. Tanaka & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Hydrogen incorporation and its temperature stability in sic crystals

Solid-State Electronics, 41(5), 677–679.

By: J. Zavada, R. Wilson, F. Ren, S. Pearton & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

ION Implantation of epitaxial GaN films: damage, doping and activation

Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 127(1997 May), 463–466.

By: N. Parikh, A. Suvkhanov, M. Lioubtchenko, E. Carlson, M. Bremser, D. Bray, R. Davis, J. Hunn

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

In situ mass spectrometry during diamond chemical vapor deposition using a low pressure flat flame

Journal of Materials Research, 12(10), 2733–2742.

By: C. Wolden, R. Davis, Z. Sitar & J. Prater

Source: NC State University Libraries
Added: August 6, 2018

1997 conference paper

In-plane optical anisotropies of Al(x)Ga(1-x)N films in their regions of transparency

III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 835–840.

By: U. Rossow, N. Edwards, M. Bremser, R. Kern, H. Liu, R. Davis, D. Aspnes

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Indentation and microcutting fracture damage in a silicon carbide coating on an incoloy substrate

Surface & Coatings Technology, 88(1-3), 119–126.

By: B. Tanikella, K. Gruss, R. Davis & R. Scattergood

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

Applied Physics Letters, 71(18), 2698–2640.

By: O. Nam, M. Bremser, T. Zheleva & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Low-temperature deposition of optically transparent diamond using a low-pressure flat flame

Diamond and Related Materials, 6(12), 1862–1867.

By: C. Wolden, R. Davis, Z. Sitar & J. Prater

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Microstructure, electrical properties, and thermal stability of Au-based ohmic contacts to p-GaN

Journal of Materials Research, 12(9), 2249–2254.

By: L. Smith, R. Davis, M. Kim, R. Carpenter & Y. Huang

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Ohmic contacts to GaN by solid phase regrowth

Acta Physica Polonica. A, 92(4), 819–823.

By: E. Kaminska, A. Piotrowska, A. Barcz, L. Ilka, M. Guziewicz, S. Kasjaniuk, E. Dynowska, S. Kwiatkowski, M. Bremser, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Optical metastability in bulk GaN single crystals

Applied Physics Letters, 71(4), 455–457.

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Raman analysis of the configurational disorder in AlxGa1-xN films

Applied Physics Letters, 71(15), 2157–2159.

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Silicon carbide for high-temperature microelectronics: recent advances in material growth via gas source MBE and device research

Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 46(1-3), 240–247.

By: R. Kern & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films

Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 50(1-3), 134–141.

By: N. Edwards, S. Yoo, M. Bremser, T. Zheleva, M. Horton, N. Perkins, T. Weeks, H. Liu ...

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Sublimation growth and characterization of bulk aluminum nitride single crystals

Journal of Crystal Growth, 179(3-4), 363–370.

By: C. Balkas, Z. Sitar, T. Zheleva, L. Bergman, R. Nemanich & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

The composition pulling effect in MOVPE grown InGaN on GaN and AlGaN and its TEM characterization

MRS Internet Journal of Nitride Semiconductor Research, 2(6).

By: K. Hiramatsu, Y. Kawaguchi, M. Shimizu, N. Sawaki, T. Zheleva, R. Davis, H. Tsuda, W. Taki, N. Kuwano, K. Oki

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications

Applied Physics Letters, 71(16), 2289–2291.

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Variation of GaN valence bands with biaxial stress and quantification of residual stress

Applied Physics Letters, 70(1997), 2001.

By: N. Edwards, M. Bremser, T. Weeks, O. Nam, R. Davis, H. Liu, R. Stall, M. Horton ...

Source: NC State University Libraries
Added: August 6, 2018

1997 conference paper

Variation of GaN valence bands with biaxial stress: quantification of residual stress and impact on fundamental band parameters

III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 781–786.

By: N. Edwards, S. Yoo, M. Bremser, M. Horton, N. Perkins, T. Weeks, H. Liu, R. Stall ...

Source: NC State University Libraries
Added: August 6, 2018

1996 conference paper

Growth of bulk AIN and GaN single crystals by sublimation

III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 41–46. Pittsburgh, Pa.: Materials Research Society.

Source: NC State University Libraries
Added: August 6, 2018

1996 journal article

Strain-related phenomena in GaN thin films

Physical Review. B, Condensed Matter and Materials Physics, 54(24), 17745–17753.

By: C. Kisielowski, J. Kruger, S. Ruvimov, T. Suski, J. Ager, E. Jones, Z. Lilientalweber, M. Rubin ...

Source: NC State University Libraries
Added: August 6, 2018

1995 patent

Germanium doped n-type aluminum nitride epitaxial layers

Washington, DC: U.S. Patent and Trademark Office.

By: R. Davis & C. Wang

Source: NC State University Libraries
Added: August 6, 2018

1995 patent

Method of forming platinum ohmic contact to p-type silicon carbide

Washington, DC: U.S. Patent and Trademark Office.

By: R. Glass, J. Palmour, R. Davis & L. Porter

Source: NC State University Libraries
Added: August 6, 2018

1995 patent

Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide

Washington, DC: U.S. Patent and Trademark Office.

By: R. Davis, C. Carter & C. Hunter

Source: NC State University Libraries
Added: August 6, 2018

1994 patent

Platinum ohmic contact to p-type silicon carbide

Washington, DC: U.S. Patent and Trademark Office.

By: R. Glass, J. Palmour, R. Davis & L. Porter

Source: NC State University Libraries
Added: August 6, 2018

1993 book

Diamond films and coatings development, properties, and applications

Park Ridge, NJ: Noyes Pub.

By: . Robert F. Davis

Source: NC State University Libraries
Added: August 6, 2018

1992 patent

Implantation and electrical activation of dopants into monocrystalline silicon carbide

Washington, DC: U.S. Patent and Trademark Office.

By: J. Edmond & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1991 patent

Homoepitaxial growth of Alpha-SiC thin films and semiconductor devices fabricated thereon

Washington, DC: U.S. Patent and Trademark Office.

By: H. Kong, J. Glass & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1991 journal article

Iii-v nitrides for electronic and optoelectronic applications

Proceedings of the IEEE, 79(5), 702–712.

By: R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1991 journal article

Thin-film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon-carbide

Proceedings of the IEEE, 79(5), 677–701.

By: R. Davis, G. Kelner, M. Shur, J. Palmour & J. Edmond

Source: NC State University Libraries
Added: August 6, 2018

1990 patent

Growth of beta-sic thin films and semiconductor devices fabricated thereon

Washington, DC: U.S. Patent and Trademark Office.

By: R. Davis, H. Kong, J. Glass & C. Carter

Source: NC State University Libraries
Added: August 6, 2018

1990 patent

Homoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon

Washington, DC: U.S. Patent and Trademark Office.

By: H. Kong, J. Glass & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1990 patent

P-N junction diodes in silicon carbide

Washington, DC: U.S. Patent and Trademark Office.

By: J. Edmond & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1989 journal article

Growth of cubic phase gallium nitride by modified molecular-beam epitaxy

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 7(3), 701–705.

By: M. Paisley, Z. Sitar, J. Posthill & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1989 patent

Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide

Washington, DC: U.S. Patent and Trademark Office.

By: R. Davis, C. Carter & C. Hunter

Source: NC State University Libraries
Added: August 6, 2018