Works (268)
2015 article
Band alignment at AlN/Si (111) and (001) interfaces
King, S. W., Nemanich, R. J., & Davis, R. F. (2015, July 28). Journal of Applied Physics.
2015 article
Cleaning of pyrolytic hexagonal boron nitride surfaces
King, S. W., Nemanich, R. J., & Davis, R. F. (2015, May 26). Surface and Interface Analysis.
2015 article
Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces
King, S. W., Tanaka, S., Davis, R. F., & Nemanich, R. J. (2015, May 21). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.
2015 article
Hydrogen desorption kinetics for aqueous hydrogen fluoride and remote hydrogen plasma processed silicon (001) surfaces
King, S. W., Davis, R. F., Carter, R. J., Schneider, T. P., & Nemanich, R. J. (2015, July 20). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.
2014 article
Desorption and sublimation kinetics for fluorinated aluminum nitride surfaces
King, S. W., Davis, R. F., & Nemanich, R. J. (2014, July 31). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.
2014 article
Gas source molecular beam epitaxy of scandium nitride on silicon carbide and gallium nitride surfaces
King, S. W., Davis, R. F., & Nemanich, R. J. (2014, September 16). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.
2014 article
Photoemission investigation of the Schottky barrier at the Sc/3C-SiC (111) interface
King, S. W., Nemanich, R. J., & Davis, R. F. (2014, October 16). Physica Status Solidi (b).
2014 article
Valence and conduction band alignment at ScN interfaces with 3C-SiC (111) and 2H-GaN (0001)
King, S. W., Nemanich, R. J., & Davis, R. F. (2014, August 25). Applied Physics Letters.
2010 journal article
Surface and defect microstructure of GaN and AlN layers grown on hydrogen-etched 6H-SiC(0001) substrates
Acta Materialia, 58(6), 2165–2175.
2009 article
On the origin of aluminum-related cathodoluminescence emissions from sublimation grown 4H-SiC()
Bishop, S. M., Reynolds, C. L., Molstad, J. C., Stevie, F. A., Barnhardt, D. E., & Davis, R. F. (2009, February 25). Applied Surface Science.
2009 article
Sequential growths of AlN and GaN layers on as-polished 6H–SiC(0001) substrates
Reitmeier, Z. J., Einfeldt, S., Davis, R. F., Zhang, X., Fang, X., & Mahajan, S. (2009, June 26). Acta Materialia.
2008 patent
Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates
Washington, DC: U.S. Patent and Trademark Office.
2008 article
Sublimation growth of an in-situ-deposited layer in SiC chemical vapor deposition on 4H-SiC(112¯0)
Bishop, S. M., Reynolds, C. L., Liliental-Weber, Z., Uprety, Y., Ebert, C. W., Stevie, F. A., … Davis, R. F. (2008, October 16). Journal of Crystal Growth.
2007 article
Characterization of growth defects in thin GaN layers with X‐ray microbeam
Barabash, R. I., Ice, G. E., Roder, C., Budai, J., Liu, W., Figge, S., … Davis, R. F. (2007, April 2). Physica Status Solidi (b).
2007 journal article
Electrical and optical properties of ZnO (000(1)over-bar) wafers implanted with argon
Journal of Applied Physics, 101(2).
2007 article
Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H–SiC (112¯0)
Bishop, S. M., Park, J.-S., Gu, J., Wagner, B. P., Reitmeier, Z. J., Batchelor, D. A., … Davis, R. F. (2007, January 2). Journal of Crystal Growth.
2007 article
Kinetics of Ga and In desorption from (7×7) Si(111) and (3×3) 6H-SiC(0001) surfaces
King, S. W., Davis, R. F., & Nemanich, R. J. (2007, November 9). Surface Science.
2007 patent
Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches
Washington, DC: U.S. Patent and Trademark Office.
2007 article
Nitrogen acceptors in bulk ZnO (0001¯) substrates and homoepitaxial ZnO films
Adekore, B. T., Pierce, J. M., Davis, R. F., Barlage, D. W., & Muth, J. F. (2007, July 15). Journal of Applied Physics.
2007 patent
Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby
Washington, DC: U.S. Patent and Trademark Office.
2007 journal article
Phonon-assisted stimulated emission from pendeoepitaxy GaN stripes grown on 6H-SiC substrates
Applied Physics Letters, 91(5).
2006 journal article
Characterization of crystallographic properties and defects via X-ray microdiffraction in GaN (0001) layers
Physica Status Solidi. A, Applications and Materials Science, 203(1), 142–148.
2006 article
Effect of thermal annealing on the metastable optical properties of GaN thin films
Chang, Y. C., Kolbas, R. M., Reitmeier, Z. J., & Davis, R. F. (2006, July 1). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.
2006 article
Growth and characterization of pendeo-epitaxial GaN on 4H–SiC substrates
Wagner, B. P., Reitmeier, Z. J., Park, J. S., Bachelor, D., Zakharov, D. N., Liliental-Weber, Z., & Davis, R. F. (2006, April 6). Journal of Crystal Growth.
2006 article
Growth and structural investigations of epitaxial hexagonal YMnO3 thin films deposited on wurtzite GaN(001) substrates
Balasubramanian, K. R., Chang, K.-C., Mohammad, F. A., Porter, L. M., Salvador, P. A., DiMaio, J., & Davis, R. F. (2006, August 25). Thin Solid Films.
2006 article
Mapping misorientation and crystallographic tilt in GaN layers via polychromatic microdiffraction
Barabash, R. I., Ice, G. E., Liu, W., Roder, C., Figge, S., Einfeldt, S., … Davis, R. F. (2006, June 1). Physica Status Solidi (b).
open access via www.escholarship.org (repository)2006 patent
Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby
Washington, DC: U.S. Patent and Trademark Office.
2006 article
Origins of Parasitic Emissions from 353 nm AlGaN-based Ultraviolet Light Emitting Diodes over SiC Substrates
Park, J.-S., Fothergill, D. W., Wellenius, P., Bishop, S. M., Muth, J. F., & Davis, R. F. (2006, May 1). Japanese Journal of Applied Physics.
2005 journal article
A printable form of single-crystalline gallium nitride for flexible optoelectronic systems
Small (Weinheim An Der Bergstrasse, Germany), 1(12), 1164–1168.
2005 article
Effect of Carrier Blocking Layers on the Emission Characteristics of AlGaN-based Ultraviolet Light Emitting Diodes
Park, J.-S., Fothergill, D. W., Zhang, X., Reitmeier, Z. J., Muth, J. F., & Davis, R. F. (2005, October 1). Japanese Journal of Applied Physics.
2005 article
Growth and fabrication of AlGaN-based ultraviolet light emitting diodes on 6H-SiC(0001) substrates and the effect of carrier-blocking layers on their emission characteristics
Park, J.-S., Reitmeier, Z. J., Fothergill, D., Zhang, X., Muth, J. F., & Davis, R. F. (2005, November 24). Materials Science and Engineering B.
2005 article
Growth of dense ZnO films via MOVPE on GaN(0001) epilayers using a low/high-temperature sequence
Pierce, J. M., Adekore, B. T., Davis, R. F., & Stevie, F. A. (2005, March 11). Journal of Crystal Growth.
2005 journal article
Homoepitaxial growth of dense ZnO(0001) and ZnO (1120) films via MOVPE on selected ZnO substrates
Journal of Crystal Growth, 283(02-Jan), 147–155.
2005 journal article
Intersecting basal plane and prismatic stacking fault structures and their formation mechanisms in GaN
Journal of Applied Physics, 98(6).
2005 journal article
Local strain, defects, and crystallographic tilt in GaN(0001) layers grown by maskless pendeo-epitaxy from x-ray microdiffraction
Journal of Applied Physics, 97(1).
2005 patent
Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts
Washington, DC: U.S. Patent and Trademark Office.
2005 journal article
On the microstructure of AlxGa1-xN layers grown on 6H-SiC(0001) substrates
Journal of Applied Physics, 97(8).
2005 article
P-type doping utilizing nitrogen and Mn doping of ZnO using MOCVD for ultraviolet lasers and spintronic applications
Egerton, E. J., Sood, A. K., Singh, R., Puri, Y. R., Davis, R. F., Pierce, J., … Steiner, T. (2005, June 1). Journal of Electronic Materials.
2005 patent
Second gallium nitride layers that extend into trenches in first gallium nitride layers
Washington, DC: U.S. Patent and Trademark Office.
2005 journal article
Step-controlled strain relaxation in the vicinal surface epitaxy of nitrides
Physical Review Letters, 95(8).
2005 journal article
Structural TEM study of nonpolar a-plane gallium nitride grown on (1120) 4H-SiC by organometallic vapor phase epitaxy
Physical Review. B, Condensed Matter and Materials Physics, 71(23).
2005 journal article
Structural defects and luminescence features in heteroepitaxial GaN grown on on-axis and misoriented substrates
Journal of Applied Physics, 97(11).
2005 article
Structural, microstructural, and electrical properties of gold films and Schottky contacts on remote plasma-cleaned, n-type ZnO{0001} surfaces
Coppa, B. J., Fulton, C. C., Kiesel, S. M., Davis, R. F., Pandarinath, C., Burnette, J. E., … Smith, D. J. (2005, May 5). Journal of Applied Physics.
2005 article
The effects of oxygen, nitrogen, and hydrogen annealing on Mg acceptors in GaN as monitored by electron paramagnetic resonance spectroscopy
Matlock, D. M., Zvanut, M. E., Wang, H., Dimaio, J. R., Davis, R. F., Nostrand, J. E., … Wickenden, A. (2005, January 1). Journal of Electronic Materials.
2005 article
The formation of epitaxial hexagonal boron nitride on nickel substrates
Yang, P. C., Prater, J. T., Liu, W., Glass, J. T., & Davis, R. F. (2005, December 1). Journal of Electronic Materials.
2005 journal article
White X-ray microbeam analysis of strain and crystallographic tilt in GaN layers grown by maskless pendeoepitaxy
Physica Status Solidi. A, Applications and Materials Science, 202(5), 732–738.
2004 article
In situ cleaning and characterization of oxygen- and zinc-terminated, n-type, ZnO{0001} surfaces
Coppa, B. J., Fulton, C. C., Hartlieb, P. J., Davis, R. F., Rodriguez, B. J., Shields, B. J., & Nemanich, R. J. (2004, April 29). Journal of Applied Physics.
2004 article
Growth and characterization of ZnO thin films on GaN epilayers
Smith, T. P., McLean, H. A., Smith, D. J., Miraglia, P. Q., Roskowski, A. M., & Davis, R. F. (2004, July 1). Journal of Electronic Materials.
2004 chapter
Growth of homoepitaxial films on 4H-SiC(1120) and 8 degrees off-axis 4H-SiC(0001) substrates and their characterization
In J. C. R. Madar & E. Blanquet (Eds.), Silicon carbide and related materials 2003: ICSCRM2003: Proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003 (Vol. 457-460, pp. 221–224). Utikon-Zurich, Switzerland: Trans Tech Publications.
Ed(s): J. R. Madar & E. Blanquet
2004 article
Homoepitaxial growth of (0001)- and -oriented ZnO thin films via metalorganic vapor-phase epitaxy and their characterization
Smith, T. P., McLean, H., Smith, D. J., & Davis, R. F. (2004, April 9). Journal of Crystal Growth.
2004 journal article
In situ cleaning of GaN(0001) surfaces in a metalorganic vapor phase epitaxy environment
Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 22(5), 2077–2082.
2004 patent
Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby
Washington, DC: U.S. Patent and Trademark Office.
2004 article
Photo-electron emission and atomic force microscopies of the hydrogen etched 6H-SiC(0001) surface and the initial growth of GaN and AlN
Hartman, J. D., Naniwae, K., Petrich, C., Nemanich, R. J., & Davis, R. F. (2004, December 15). Applied Surface Science.
2004 article
Preparation and characterization of atomically clean, stoichiometric surfaces of AIN(0001)
Mecouch, W. J., Wagner, B. P., Reitmeier, Z. J., Davis, R. F., Pandarinath, C., Rodriguez, B. J., & Nemanich, R. J. (2004, December 2). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.
2004 article
Selective Etching of GaN from AlGaN/GaN and AlN/GaN Structures
Grenko, J. A., Reynolds, C. L., Schlesser, R., Bachmann, K., Rietmeier, Z., Davis, R. F., & Sitar, Z. (2004, January 1). MRS Internet Journal of Nitride Semiconductor Research.
2004 article
Surface-roughness correlations in homoepitaxial growth of GaN(0001) films by NH3 supersonic jet epitaxy
Smith, N. A., Lamb, H. H., McGinnis, A. J., & Davis, R. F. (2004, October 4). Journal of Applied Physics.
2003 article
Band offset measurements of the GaN (0001)/HfO2 interface
2003 article
Band offset measurements of the Si3N4/GaN (0001) interface
Cook, T. E., Fulton, C. C., Mecouch, W. J., Davis, R. F., Lucovsky, G., & Nemanich, R. J. (2003, September 15). Journal of Applied Physics.
2003 article
Characterization of hydrogen etched 6H–SiC(0001) substrates and subsequently grown AlN films
Hartman, J. D., Roskowski, A. M., Reitmeier, Z. J., Tracy, K. M., Davis, R. F., & Nemanich, R. J. (2003, February 5). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.
2003 article
Domain structures in 6H-SiC wafers and their effect on the microstructures of GaN films grown on A1N and A10.2Ga0.8N buffer layers
Preble, E. A., Miraglia, P. Q., Roskowski, A. M., Vetter, W. M., Dudley, M., & Davis, R. F. (2003, September 12). Journal of Crystal Growth.
2003 article
Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag
Tracy, K. M., Hartlieb, P. J., Einfeldt, S., Davis, R. F., Hurt, E. H., & Nemanich, R. J. (2003, September 15). Journal of Applied Physics.
2003 article
Electron energy distribution during high-field transport in AlN
Collazo, R., Schlesser, R., Roskowski, A., Miraglia, P., Davis, R. F., & Sitar, Z. (2003, March 1). Journal of Applied Physics, Vol. 93, pp. 2765–2771.
2003 article
Evolution and growth of ZnO thin films on GaN(0001) epilayers via metalorganic vapor phase epitaxy
Smith, T. P., Mecouch, W. J., Miraglia, P. Q., Roskowski, A. M., Hartlieb, P. J., & Davis, R. F. (2003, September 3). Journal of Crystal Growth.
2003 article
GaN evaporation and enhanced diffusion of Ar during high-temperature ion implantation
Usov, I., Parikh, N., Kudriavtsev, Y., Asomoza, R., Reitmeier, Z., & Davis, R. (2003, April 17). Journal of Applied Physics.
2003 article
Gallium nitride and related materials: challenges in materials processing
Davis, R. F., Einfeldt, S., Preble, E. A., Roskowski, A. M., Reitmeier, Z. J., & Miraglia, P. Q. (2003, October 16). Acta Materialia.
2003 patent
Gallium nitride semiconductor structure including laterally offset patterned layers
Washington, DC: U.S. Patent and Trademark Office.
2003 patent
Gallium nitride semiconductor structures fabricated by pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts
Washington, DC: U.S. Patent and Trademark Office.
2003 patent
Gallium nitride semiconductor structures including lateral gallium nitride layers
Washington, DC: U.S. Patent and Trademark Office.
2003 article
Gold Schottky contacts on oxygen plasma-treated, n-type ZnO(0001)
Coppa, B. J., Davis, R. F., & Nemanich, R. J. (2003, January 16). Applied Physics Letters.
2003 journal article
HVPE-GaN: comparison of emission properties and microstructure of films grown on different laterally overgrown templates
Diamond and Related Materials, 13(4-8), 1125–1129.
2003 article
Helical-type surface defects in GaN thin films epitaxially grown on GaN templates at reduced temperatures
Miraglia, P. Q., Preble, E. A., Roskowski, A. M., Einfeldt, S., & Davis, R. F. (2003, May 13). Journal of Crystal Growth.
2003 article
Helical-type surface defects in InGaN thin films epitaxially grown on GaN templates at reduced temperatures
Miraglia, P. Q., Preble, E. A., Roskowski, A. M., Einfeldt, S., Lim, S. H., Liliental-Weber, Z., & Davis, R. F. (2003, June 21). Thin Solid Films.
2003 article
High performance 0.14 /spl mu/m gate-length AlGaN/GaN power HEMTs on SiC
Jessen, G. H., Fitch, R. C., Gillespie, J. K., Via, G. D., Moser, N. A., Yannuzzi, M. J., … Binari, S. C. (2003, November 1). IEEE Electron Device Letters.
2003 article
Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)
Cook, T. E., Fulton, C. C., Mecouch, W. J., Tracy, K. M., Davis, R. F., Hurt, E. H., … Nemanich, R. J. (2003, March 27). Journal of Applied Physics.
2003 patent
Methods of fabricating gallium nitride microelectronic layers on silicon layers
Washington, DC: U.S. Patent and Trademark Office.
2003 patent
Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth
Washington, DC: U.S. Patent and Trademark Office.
2003 patent
Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby
Washington, DC: U.S. Patent and Trademark Office.
2003 journal article
Microscopic mapping of strain relaxation in uncoalesced pendeoepitaxial GaN on SiC
Physical Review. B, Condensed Matter and Materials Physics, 67(4), 045321–045321.
2003 patent
Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates
Washington, DC: U.S. Patent and Trademark Office.
2003 patent
Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby
Washington, DC: U.S. Patent and Trademark Office.
2003 article
Preparation and characterization of atomically clean, stoichiometric surfaces of n- and p-type GaN(0001)
Tracy, K. M., Mecouch, W. J., Davis, R. F., & Nemanich, R. J. (2003, August 21). Journal of Applied Physics.
2003 article
Response to Comment on ‘Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces’ [J. Appl. Phys. 91, 732 (2002)]
Hartlieb, P. J., Roskowski, A., Davis, R. F., Platow, W., & Nemanich, R. J. (2003, March 5). Journal of Applied Physics.
2003 article
Surface morphology and strain of GaN layers grown using 6H-SiC(0001) substrates with different buffer layers
Einfeldt, S., Reitmeier, Z. J., & Davis, R. F. (2003, May 13). Journal of Crystal Growth.
2002 article
Application of Nomarski interference contrast microscopy as a thickness monitor in the preparation of transparent, SiC-based, cross-sectional TEM samples
Preble, E. A., McLean, H. A., Kiesel, S. M., Miraglia, P., Albrecht, M., & Davis, R. F. (2002, August 1). Ultramicroscopy.
2002 article
Chemical, electrical, and structural properties of Ni/Au contacts on chemical vapor cleaned p-type GaN
Hartlieb, P. J., Roskowski, A., Davis, R. F., & Nemanich, R. J. (2002, June 1). Journal of Applied Physics.
2002 article
Cross-sectional imaging of pendeo-epitaxial GaN using continuous-wave two-photon microphotoluminescence
Schuck, P. J., Grober, R. D., Roskowski, A. M., Einfeldt, S., & Davis, R. F. (2002, September 9). Applied Physics Letters.
2002 journal article
Effect of implantation temperature on damage accumulation in Ar-implanted GaN
MRS Internet Journal of Nitride Semiconductor Research, 7(9), 9–1.
2002 article
Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor-cleaned GaN thin films
Preble, E. A., Tracy, K. M., Kiesel, S., McLean, H., Miraglia, P. Q., Nemanich, R. J., … Smith, D. J. (2002, February 15). Journal of Applied Physics.
2002 article
Electron-beam-induced optical memory effects in GaN
Chang, Y. C., Cai, A. L., Johnson, M. A. L., Muth, J. F., Kolbas, R. M., Reitmeier, Z. J., … Davis, R. F. (2002, April 15). Applied Physics Letters.
2002 article
Gallium nitride materials - progress, status, and potential roadblocks
Davis, R. F., Roskowski, A. M., Preble, E. A., Speck, J. S., Heying, B., Freitas, J. A., … Carlos, W. E. (2002, June 1). Proceedings of the IEEE.
2002 article
Growth and decomposition of bulk GaN: role of the ammonia/nitrogen ratio
Shin, H., Arkun, E., Thomson, D. B., Miraglia, P., Preble, E., Schlesser, R., … Davis, R. F. (2002, March 1). Journal of Crystal Growth.
2002 article
High temperature nucleation and growth of GaN crystals from the vapor phase
Shin, H., Thomson, D. B., Schlesser, R., Davis, R. F., & Sitar, Z. (2002, June 1). Journal of Crystal Growth.
2002 patent
High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates
Washington, DC: U.S. Patent and Trademark Office.
2002 article
Investigations regarding the maskless pendeo-epitaxial growth of GaN films prior to coalescence
Roskowski, A. M., Preble, E. A., Einfeldt, S., Miraglia, P. M., & Davis, R. F. (2002, August 1). IEEE Journal of Quantum Electronics.
2002 article
Maskless pendeo-epitaxial growth of GaN films
Roskowski, A. M., Preble, E. A., Einfeldt, S., Miraglia, P. M., & Davis, R. F. (2002, May 1). Journal of Electronic Materials.
2002 patent
Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts
Washington, DC: U.S. Patent and Trademark Office.
2002 patent
Methods of forming compound semiconductor layers using spaced trench arrays and semiconductor substrates formed thereby
Washington, DC: U.S. Patent and Trademark Office.
2002 article
Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces
Hartlieb, P. J., Roskowski, A., Davis, R. F., Platow, W., & Nemanich, R. J. (2002, January 15). Journal of Applied Physics.
2002 patent
Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates
Washington, DC: U.S. Patent and Trademark Office.
2002 patent
Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, ang gallium nitratde semiconductor structures fabricated thereby
Washington, DC: U.S. Patent and Trademark Office.
2002 patent
Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby
Washington, DC: U.S. Patent and Trademark Office.
2002 article
Probing the AlxGa1−xN spatial alloy fluctuation via UV-photoluminescence and Raman at submicron scale
Bergman, L., Chen, X.-B., McIlroy, D., & Davis, R. F. (2002, November 21). Applied Physics Letters.
2002 journal article
Reduction in dislocation density and strain in GaN thin films grown via maskless pendeo-epitaxy
Opto-Electronics Review, 10(4), 261–270.
2002 article
Strain and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeoepitaxy
Einfeldt, S., Roskowski, A. M., Preble, E. A., & Davis, R. F. (2002, February 11). Applied Physics Letters.
2002 article
Strain in cracked AlGaN layers
Einfeldt, S., Dießelberg, M., Heinke, H., Hommel, D., Rudloff, D., Christen, J., & Davis, R. F. (2002, July 1). Journal of Applied Physics.
2002 article
Supersonic jet epitaxy of gallium nitride using triethylgallium and ammonia
McGinnis, A. J., Thomson, D., Banks, A., Preble, E., Davis, R. F., & Lamb, H. H. (2002, December 20). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.
2002 article
Surface instability and associated roughness during conventional and pendeo-epitaxial growth of GaN(0001) films via MOVPE
Roskowski, A. M., Miraglia, P. Q., Preble, E. A., Einfeldt, S., & Davis, R. F. (2002, May 1). Journal of Crystal Growth.
2002 article
The influence of band offsets on the IV characteristics for GaN/SiC heterojunctions
Danielsson, E., Zetterling, C.-M., Östling, M., Linthicum, K., Thomson, D. B., Nam, O.-H., & Davis, R. F. (2002, June 1). Solid-State Electronics.
2002 article
TiC nanoisland formation on 6H–SiC(0001)Si
Platow, W., Oh, J., Nemanich, R. J., Sayers, D. E., Hartman, J. D., & Davis, R. F. (2002, May 1). Journal of Applied Physics.
2001 article
Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates
Davis, R. F., Gehrke, T., Linthicum, K. J., Preble, E., Rajagopal, P., Ronning, C., … Mehregany, M. (2001, October 1). Journal of Crystal Growth.
2001 article
Growth of epitaxial CoSi2 on 6H-SiC(0001)Si
Platow, W., Nemanich, R. J., Sayers, D. E., Hartman, J. D., & Davis, R. F. (2001, December 15). Journal of Applied Physics.
2001 article
In situ cleaning of GaN/6H-SiC substrates in NH3
McGinnis, A. J., Thomson, D., Davis, R. F., Chen, E., Michel, A., & Lamb, H. H. (2001, January 1). Journal of Crystal Growth.
2001 article
Ion implantation into gallium nitride
Ronning, C. (2001, September 1). Physics Reports.
2001 article
Kinetics and gas-surface dynamics of GaN homoepitaxial growth using NH3-seeded supersonic molecular beams
McGinnis, A. J., Thomson, D., Davis, R. F., Chen, E., Michel, A., & Lamb, H. H. (2001, November 1). Surface Science.
2001 article
Lateral epitaxy and dislocation density reduction in selectively grown GaN structures
Zheleva, T. S., Nam, O.-H., Ashmawi, W. M., Griffin, J. D., & Davis, R. F. (2001, February 1). Journal of Crystal Growth.
2001 patent
Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
Washington, DC: U.S. Patent and Trademark Office.
2001 patent
Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
Washington, DC: U.S. Patent and Trademark Office.
2001 patent
Methods of forming a plurality of semiconductor layers using spaced trench arrays
Washington, DC: U.S. Patent and Trademark Office.
2001 article
Optical metastability of subband gap (2.2 eV) yellow luminescence in GaN
Chang, Y. C., Oberhofer, A. E., Muth, J. F., Kolbas, R. M., & Davis, R. F. (2001, July 16). Applied Physics Letters.
2001 journal article
Pendeo-epitaxial growth and characterization of thin films of gallium nitride and related materials on SiC(0001) and si(111) substrates
Zeitschrift Fur MetallkundeAmerican Journal of Physiology, 92(2), 163–166.
2001 article
Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization
Davis, R. F., Gehrke, T., Linthicum, K. J., Zheleva, T. S., Preble, E. A., Rajagopal, P., … Mehregany, M. (2001, May 1). Journal of Crystal Growth.
2001 patent
Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates
Washington, DC: U.S. Patent and Trademark Office.
2001 article
Photoluminescence and electrical characteristics of the two-dimensional electron gas in Si delta-doped GaN layers
Teng, C. W., Aboelfotoh, M. O., Davis, R. F., Muth, J. F., & Kolbas, R. M. (2001, March 19). Applied Physics Letters.
2001 article
Polarization charges and polarization-induced barriers in AlxGa1−xN/GaN and InyGa1−yN/GaN heterostructures
Jia, L., Yu, E. T., Keogh, D., Asbeck, P. M., Miraglia, P., Roskowski, A., & Davis, R. F. (2001, October 29). Applied Physics Letters.
2001 journal article
Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates
MRS Internet Journal of Nitride Semiconductor Research, 6(14), 1–16.
2001 article
Strain and Dislocation Reduction in Maskless Pendeo-Epitaxy GaN Thin Films
Roskowski, A. M., Miraglia, P. Q., Preble, E. A., Einfeldt, S., Stiles, T., Davis, R. F., … Schwarz, U. (2001, December 1). Physica Status Solidi (a), Vol. 188, pp. 729–732.
2001 journal article
Time-resolved photoluminescence in strained GaN layers
Physica Status Solidi. A, Applications and Materials Science, 183(1), 151–155.
2001 article
Time-resolved spectroscopy of strained GaN/AlN/6H–SiC heterostructures grown by metalorganic chemical vapor deposition
Pozina, G., Edwards, N. V., Bergman, J. P., Paskova, T., Monemar, B., Bremser, M. D., & Davis, R. F. (2001, February 19). Applied Physics Letters.
2000 article
Crystallinity and microstructures of aluminum nitride films deposited on Si(111) substrates
Liaw, H. M., Doyle, R., Fejes, P. L., Zollner, S., Konkar, A., Linthicum, K. J., … Davis, R. F. (2000, April 1). Solid-State Electronics.
2000 journal article
Dry etching and metallization schemes in a GaN/SiC heterojunction device process
Materials Science Forum, 338(3), 1049–1052.
2000 patent
Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
Washington, DC: U.S. Patent and Trademark Office.
2000 article
Growth and characterization of GaN single crystals
Balkaş, C. M., Sitar, Z., Bergman, L., Shmagin, I. K., Muth, J. F., Kolbas, R., … Davis, R. F. (2000, January 1). Journal of Crystal Growth.
2000 journal article
Growth and characterization of piezoelectrically enhanced acceptor-type AlGaN/GaN heterostructures
MRS Internet Journal of Nitride Semiconductor Research, 5, U520–525.
2000 article
Growth and microstructure of InxGa1−xN films grown on SiC substrates via low pressure metalorganic vapor phase epitaxy
Hanser, A. D., Banks, A. D., Davis, R. F., Jahnen, B., Albrecht, M., Dorsch, W., … Strunk, H. P. (2000, June 1). Materials Science in Semiconductor Processing.
2000 article
Hot electron transport in AlN
Collazo, R., Schlesser, R., Roskowski, A., Davis, R. F., & Sitar, Z. (2000, November 15). Journal of Applied Physics, Vol. 88, pp. 5865–5869.
2000 journal article
Influence of annealing conditions on dopant activation of Si+ and Mg+ implanted GaN
Materials Science Forum, 338(3), 1615–1618.
2000 article
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
Ronning, C., Dalmer, M., Uhrmacher, M., Restle, M., Vetter, U., Ziegeler, L., … Collaboration, I. S. O. L. D. E. (2000, March 1). Journal of Applied Physics.
2000 journal article
Lateral- and pendeo-epitaxial growth and defect reduction in GaN thin films
Materials Science Forum, 338(3), 1471–1476.
2000 article
Optical characterization of wide bandgap semiconductors
Edwards, N. V., Bremser, M. D., Batchelor, A. D., Buyanova, I. A., Madsen, L. D., Yoo, S. D., … Monemar, B. (2000, March 1). Thin Solid Films, Vol. 364, pp. 98–106.
2000 journal article
Pendeo-epitaxial growth and characterization of GaN and related materials on (6H-SiC(0001) and Si(111) substrates
MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U46–57.
2000 article
Pendeo-epitaxial growth of gallium nitride on silicon substrates
Gehrke, T., Linthicum, K. J., Preble, E., Rajagopal, P., Ronning, C., Zorman, C., … Davis, R. F. (2000, March 1). Journal of Electronic Materials.
2000 journal article
Pendeo-epitaxy (TM) process for aluminum gallium nitride thin films on silicon carbide substrates via metalorganic chemical vapor deposition
Materials Science Forum, 338(3), 1491–1494.
2000 article
Photo-Emission Electron Microscopy (PEEM) of Cleaned and Etched 6H-SiC(0001)
Hartman, J. D., Naniwae, K., Petrich, C., Ramachandran, V., Feenstra, R. M., Nemanich, R. J., & Davis, R. F. (2000, May 10). Materials Science Forum.
2000 journal article
Photoluminescence characterization of Mg implanted GaN
MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U622–628.
2000 article
Schottky barrier height and electron affinity of titanium on AlN
Ward, B. L., Hartman, J. D., Hurt, E. H., Tracy, K. M., Davis, R. F., & Nemanich, R. J. (2000, July 1). Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena.
2000 article
Selective etching of GaN over AlN using an inductively coupled plasma and an O2/Cl2/Ar chemistry
Smith, S. A., Lampert, W. V., Rajagopal, P., Banks, A. D., Thomson, D., & Davis, R. F. (2000, May 1). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.
2000 journal article
SiC MISFETs with MBE-grown AlN gate dielectric
Materials Science Forum, 338(3), 1315–1318.
2000 journal article
Zirconium mediated hydrogen outdiffusion from p-GaN
MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U491–496.
1999 article
Adhesion measurement of zirconium nitride and amorphous silicon carbide coatings to nickel and titanium alloys
Gruss, K. A., & Davis, R. F. (1999, May 1). Surface and Coatings Technology.
1999 journal article
Characterization of Be-implanted GaN annealed at high temperatures
MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.17).
1999 article
Charge Redistribution at GaN–Ga2O3 Interfaces: A Microscopic Mechanism for Low Defect Density Interfaces in Remote Plasma Processed MOS Devices Prepared on Polar GaN Faces
Therrien, R., Lucovsky, G., & Davis, R. F. (1999, November 1). Physica Status Solidi (a).
1999 article
Charge redistribution at GaNGa2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces
Therrien, R., Niimi, H., Gehrke, T., Lucovsky, G., & Davis, R. (1999, September 1). Microelectronic Engineering.
1999 article
Chemical Vapor Cleaning of 6H‐SiC Surfaces
King, S. W., Kern, R. S., Benjamin, M. C., Barnak, J. P., Nemanich, R. J., & Davis, R. F. (1999, September 1). Journal of The Electrochemical Society.
1999 article
Dry Ex Situ Cleaning Processes for ( 0001 ) Si 6H‐SiC Surfaces
King, S. W., Nemanich, R. J., & Davis, R. F. (1999, July 1). Journal of The Electrochemical Society.
1999 article
Electrochemical evaluation of molybdenum nitride electrodes in H2SO4 electrolyte
Roberson, S. L., Finello, D., & Davis, R. F. (1999, January 1). Journal of Applied Electrochemistry.
1999 journal article
Electronic structure of the 0.88-eV luminescence center in electron-irradiated gallium nitride
Physical Review. B, Condensed Matter and Materials Physics, 60(3), 1746–1751.
1999 journal article
Evidence for localized Si-donor state and its DX-like properties in AlGaN: Errata (vol 74, pg 3833, 1999)
Applied Physics Letters, 75(20), 3225A.
1999 article
Evidence for localized Si-donor state and its metastable properties in AlGaN
Skierbiszewski, C., Suski, T., Leszczynski, M., Shin, M., Skowronski, M., Bremser, M. D., & Davis, R. F. (1999, June 21). Applied Physics Letters.
1999 article
Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1−xN
Hanser, A. D., Nam, O.-H., Bremser, M. D., Thomson, D. B., Gehrke, T., Zheleva, T. S., & Davis, R. F. (1999, March 1). Diamond and Related Materials.
1999 patent
High surface area molybdenum nitride electrodes
Washington, DC: U.S. Patent and Trademark Office.
1999 journal article
Homoepitaxial GaN layers studied by low-energy electron microscopy, atomic force microscopy and transmission electronmicroscopy
Physica Status Solidi. A, Applications and Materials Science, 176(1), 469–473.
1999 article
Imaging electron emission from diamond and III–V nitride surfaces with photo-electron emission microscopy
Nemanich, R. J., English, S. L., Hartman, J. D., Sowers, A. T., Ward, B. L., Ade, H., & Davis, R. F. (1999, May 1). Applied Surface Science, Vol. 146, pp. 287–294.
1999 article
Low-energy electron microscopy observations of GaN homoepitaxy using a supersonic jet source
Pavlovska, A., Torres, V. M., Bauer, E., Doak, R. B., Tsong, I. S. T., Thomson, D. B., & Davis, R. F. (1999, August 16). Applied Physics Letters.
1999 article
Microstructure, electrical properties, and thermal stability of Ti-based ohmic contacts to n-GaN
Smith, L. L., Davis, R. F., Liu, R.-J., Kim, M. J., & Carpenter, R. W. (1999, March 1). Journal of Materials Research/Pratt's Guide to Venture Capital Sources.
1999 journal article
Ni/Si-based contacts to GaN: Thermally activated structural transformations leading to ohmic behavior
MRS Internet Journal of Nitride Semiconductor Research, 4S1(G9.9).
1999 journal article
Observation of highly dispersive surface states on GaN(0001)1x1
Physical Review. B, Condensed Matter and Materials Physics, 59(24), R15586–15589.
1999 journal article
Pendeo-epitaxy of gallium nitride and aluminum nitride films and heterostructures on silicon carbide substrate
MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.2).
1999 personal communication
Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films
1999 journal article
Pendeo-epitaxy: A new approach for lateral growth of gallium nitride structures
MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.38).
1999 article
Pendeoepitaxy of gallium nitride thin films
Linthicum, K., Gehrke, T., Thomson, D., Carlson, E., Rajagopal, P., Smith, T., … Davis, R. (1999, July 12). Applied Physics Letters.
1999 article
Phonon Dynamics and Lifetimes of Aln and Gan Crystallites
Bergman, L., Alexson, D., Nemanich, R. J., Dutta*, M., Stroscio, M. A., Balkas, C., & Davis, R. F. (1999, January 1). MRS Internet Journal of Nitride Semiconductor Research.
1999 journal article
Process routes for low defect-density GaN on various substrates employing pendeo-epitaxial growth techniques
MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.9).
1999 article
Raman analysis of phonon lifetimes in AlN and GaN of wurtzite structure
Bergman, L., Alexson, D., Murphy, P. L., Nemanich, R. J., Dutta, M., Stroscio, M. A., … Davis, R. F. (1999, May 15). Physical Review. B, Condensed Matter.
1999 article
Raman analysis of the E1 and A1 quasi-longitudinal optical and quasi-transverse optical modes in wurtzite AlN
Bergman, L., Dutta, M., Balkas, C., Davis, R. F., Christman, J. A., Alexson, D., & Nemanich, R. J. (1999, April 1). Journal of Applied Physics.
1999 journal article
Ranges of deposition temperatures applicable for metalorganic vapor phase epitaxy of GaN films via the technique of pendeo- epitaxy
MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.37).
1999 article
Relaxation Phenomena in GaN/ AlN/ 6H-SiC Heterostructures
Edwards, N. V., Batchelor, A. D., Buyanova, I. A., Madsen, L. D., Bremser, M. D., Davis, R. F., … Monemar, B. (1999, January 1). MRS Internet Journal of Nitride Semiconductor Research, Vol. 4S1.
1999 journal article
Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes
Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 61-2(1999 July 30), 320–324.
1999 article
Stimulated emission in GaN thin films in the temperature range of 300–700 K
Bidnyk, S., Little, B. D., Schmidt, T. J., Cho, Y. H., Krasinski, J., Song, J. J., … Davis, R. F. (1999, February 1). Journal of Applied Physics.
1999 article
Thermal mismatch stress relaxation via lateral epitaxy in selectively grown GaN structures
Zheleva, T. S., Ashmawi, W. M., Nam, O.-H., & Davis, R. F. (1999, April 26). Applied Physics Letters.
1999 article
Valence band discontinuity of the (0001) 2H-GaN / (111) 3C-SiC interface
King, S. W., Davis, R. F., Ronning, C., & Nemanich, R. J. (1999, December 1). Journal of Electronic Materials.
1999 article
Valence band discontinuity, surface reconstruction, and chemistry of (0001), (0001), and (1100) 2H–AlN/6H–SiC interfaces
King, S. W., Davis, R. F., Ronning, C., Benjamin, M. C., & Nemanich, R. J. (1999, October 15). Journal of Applied Physics.
1999 article
Wet Chemical Processing of (0001)Si 6H‐SiC Hydrophobic and Hydrophilic Surfaces
King, S. W., Nemanich, R. J., & Davisa, R. F. (1999, May 1). Journal of The Electrochemical Society.
1999 article
X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms
King, S. W., Carlson, E. P., Therrien, R. J., Christman, J. A., Nemanich, R. J., & Davis, R. F. (1999, November 15). Journal of Applied Physics.
1998 article
A Free Electron Laser–Photoemission Electron Microscope System (FEL–PEEM)
Ade, H., Yang, W., English, S. L., Hartman, J., Davis, R. F., Nemanich, R. J., … Madey, J. M. J. (1998, December 1). Surface Review and Letters, Vol. 5, pp. 1257–1268.
1998 article
Acceptor and donor doping of AlxGa1−xN thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy
Bremser, M. D., Perry, W. G., Nam, O. H., Griffis, D. P., Loesing, R., Ricks, D. A., & Davis, R. F. (1998, April 1). Journal of Electronic Materials.
1998 article
Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy
Kern, R. S., Rowland, L. B., Tanaka, S., & Davis, R. F. (1998, July 1). Journal of Materials Research/Pratt's Guide to Venture Capital Sources.
1998 article
Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AIN and GaN thin films on α(6H)-SiC substrates
Hanser, A. D., Wolden, C. A., Perry, W. G., Zheleva, T., Carlson, E. P., Banks, A. D., … Davis, R. F. (1998, April 1). Journal of Electronic Materials.
1998 article
Biaxial strain in AlxGa1−xN/GaN layers deposited on 6H-SiC
Perry, W. G., Bremser, M. B., Zheleva, T., Linthicum, K. J., & Davis, R. F. (1998, July 1). Thin Solid Films.
1998 article
Cathodoluminescence studies of the deep level emission bands of AlxGa1−xN films deposited on 6H–SiC(0001)
Perry, W. G., Bremser, M. B., & Davis, R. F. (1998, January 1). Journal of Applied Physics.
1998 article
Chapter 1 Materials Properties and Characterization of SiC
Järrendahl, K., & Davis, R. F. (1998, January 1). Semiconductors and Semimetals.
1998 article
Characterization of zirconium nitride coatings deposited by cathodic arc sputtering
Gruss, K. A., Zheleva, T., Davis, R. F., & Watkins, T. R. (1998, September 1). Surface and Coatings Technology.
1998 article
Cleaning of AlN and GaN surfaces
King, S. W., Barnak, J. P., Bremser, M. D., Tracy, K. M., Ronning, C., Davis, R. F., & Nemanich, R. J. (1998, November 1). Journal of Applied Physics.
1998 article
Coalesced oriented diamond films on nickel
Yang, P. C., Wolden, C. A., Liu, W., Schlesser, R., Davis, R. F., Prater, J. T., & Sitar, Z. (1998, May 1). Journal of Materials Research/Pratt's Guide to Venture Capital Sources.
1998 article
Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction
King, S. W., Ronning, C., Davis, R. F., Benjamin, M. C., & Nemanich, R. J. (1998, August 15). Journal of Applied Physics.
1998 article
Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy
Ward, B. L., Nam, O.-H., Hartman, J. D., English, S. L., McCarson, B. L., Schlesser, R., … Nemanich, R. J. (1998, November 1). Journal of Applied Physics.
1998 article
Electron emission properties of crystalline diamond and III-nitride surfaces
Nemanich, R. J., Baumann, P. K., Benjamin, M. C., Nam, O.-H., Sowers, A. T., Ward, B. L., … Davis, R. F. (1998, June 1). Applied Surface Science, Vol. 132, pp. 694–703.
1998 article
Fine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiC
Joshkin, V. A., Parker, C. A., Bedair, S. M., Krasnobaev, L. Y., Cuomo, J. J., Davis, R. F., & Suvkhanov, A. (1998, June 1). Applied Physics Letters.
1998 article
Flat-flame diamond CVD: The effect of pressure and operating conditions for specific applications
Wolden, C. A., Davis, R. F., Sitar, Z., & Prater, J. T. (1998, February 1). Diamond and Related Materials.
1998 personal communication
Growth of Fe3N films via chemical vapor deposition of iron acetylacetonate and anhydrous ammonia
1998 article
Growth of MoxN films via chemical vapor deposition of MoCl5 and NH3
Roberson, S. L., Finello, D., & Davis, R. F. (1998, April 1). Surface and Coatings Technology.
1998 article
Growth of highly (0001)-oriented aluminum nitride thin films with smooth surfaces on silicon carbide by gas-source molecular beam epitaxy
Järrendahl, K., Smith, S. A., Zheleva, T., Kern, R. S., & Davis, R. F. (1998, March 1). Vacuum.
1998 article
Interfacial Microstructure of Ni/Si-Based Ohmic Contacts To GaN
Kamińska, E., Piotrowska, A., Jasiński, J., Kozubowski, J., Barcz, A., Gołaszewska, K., … Davis, R. F. (1998, September 1). Acta Physica Polonica A.
1998 article
Intrinsic exciton transitions in GaN
Shan, W., Fischer, A. J., Hwang, S. J., Little, B. D., Hauenstein, R. J., Xie, X. C., … Davis, R. F. (1998, January 1). Journal of Applied Physics.
1998 article
Investigation of optically active E1 transversal optic phonon modes in AlxGa1−xN layers deposited on 6H–SiC substrates using infrared reflectance
Wisniewski, P., Knap, W., Malzac, J. P., Camassel, J., Bremser, M. D., Davis, R. F., & Suski, T. (1998, September 28). Applied Physics Letters.
1998 article
Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy
Nam, O.-H., Zheleva, T. S., Bremser, M. D., & Davis, R. F. (1998, April 1). Journal of Electronic Materials.
1998 article
Lattice site location studies of ion implanted Li8 in GaN
Dalmer, M., Restle, M., Sebastian, M., Vetter, U., Hofsäss, H., Bremser, M. D., … Bharuth-Ram, K. (1998, September 15). Journal of Applied Physics.
1998 article
Microstructural factors influencing the properties of high surface area molybdenum nitride films converted from molybdenum trioxide films deposited via solution spray pyrolysis
Roberson, S. L., Finello, D., & Davis, R. F. (1998, August 1). Journal of Materials Research/Pratt's Guide to Venture Capital Sources.
1998 article
Optical activation of Be implanted into GaN
Ronning, C., Carlson, E. P., Thomson, D. B., & Davis, R. F. (1998, September 21). Applied Physics Letters.
1998 journal article
Optical and structural properties of lateral epitaxial overgrown GaN layers
Journal of Crystal Growth, 190(1998 June), 92–96.
1998 article
Optical characterization of lateral epitaxial overgrown GaN layers
Freitas, J. A., Nam, O.-H., Davis, R. F., Saparin, G. V., & Obyden, S. K. (1998, June 8). Applied Physics Letters.
1998 article
Phase control of MoxN films via chemical vapor deposition
Roberson, S. L., Finello, D., & Davis, R. F. (1998, July 1). Thin Solid Films.
1998 article
Phonon density of states of bulk gallium nitride
Nipko, J. C., Loong, C.-K., Balkas, C. M., & Davis, R. F. (1998, July 6). Applied Physics Letters.
1998 article
Photoelectrochemical Capacitance-Voltage Measurements in GaN
Stutz, C. E., Mack, M., Bremser, M. D., Nam, O. H., Davis, R. F., & Look, D. C. (1998, May 1). Journal of Electronic Materials.
1998 journal article
Pinholes, dislocations and strain relaxation in InGaN
MRS Internet Journal of Nitride Semiconductor Research, 3(39).
1998 journal article
Reaction kinetics of silicon carbide deposition by gas-source molecular-beam epitaxy
Journal of Crystal Growth, 183(4), 581–593.
1998 article
Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films
Edwards, N. V., Yoo, S. D., Bremser, M. D., Horton, M. N., Perkins, N. R., Weeks, T. W., … Aspnes, D. E. (1998, February 1). Thin Solid Films, Vol. 313, pp. 187–192.
1998 article
Structural and electronic properties of boron nitride thin films containing silicon
Ronning, C., Banks, A. D., McCarson, B. L., Schlesser, R., Sitar, Z., Davis, R. F., … Nemanich, R. J. (1998, November 1). Journal of Applied Physics.
1998 article
Surface melting in the heteroepitaxial nucleation of diamond on Ni
Yang, P. C., Liu, W., Schlesser, R., Wolden, C. A., Davis, R. F., Prater, J. T., & Sitar, Z. (1998, April 1). Journal of Crystal Growth.
1998 journal article
Synthesis of low oxygen concentration molybdenum nitride films
Materials Science & Engineering. A, Structural Materials: Properties, Microstructure and Processing, 248(1-2), 198–205.
1998 journal article
The formation of crystalline defects and crystal growth mechanism in InxGa1-xN/GaN heterostructure grown by metalorganic vapor phase epitaxy
Journal of Crystal Growth, 190(1998 June), 24–28.
1998 article
Transmission electron microscopy analysis of the oriented diamond growth on nickel substrates
Liu, W., Yang, P. C., Wolden, C. A., Davis, R. F., Prater, J. T., & Sitar, Z. (1998, June 15). Journal of Applied Physics.
1998 article
Trends in residual stress for GaN/AlN/6H–SiC heterostructures
Edwards, N. V., Bremser, M. D., Davis, R. F., Batchelor, A. D., Yoo, S. D., Karan, C. F., & Aspnes, D. E. (1998, November 9). Applied Physics Letters, Vol. 73, pp. 2808–2810.
1998 article
X-ray photoelectron diffraction from (3×3) and (√3×√3)R 30° (0001)Si 6H–SiC surfaces
King, S. W., Ronning, C., Davis, R. F., Busby, R. S., & Nemanich, R. J. (1998, December 1). Journal of Applied Physics.
1997 article
In situ mass spectrometry during diamond chemical vapor deposition using a low pressure flat flame
Wolden, C. A., Davis, R. F., Sitar, Z., & Prater, J. T. (1997, October 1). Journal of Materials Research/Pratt's Guide to Venture Capital Sources.
1997 article
Control of diamond heteroepitaxy on nickel by optical reflectance
Yang, P. C., Schlesser, R., Wolden, C. A., Liu, W., Davis, R. F., Sitar, Z., & Prater, J. T. (1997, June 2). Applied Physics Letters.
1997 article
Deposition and doping of silicon carbide by gas-source molecular beam epitaxy
Kern, R. S., & Davis, R. F. (1997, September 8). Applied Physics Letters.
1997 article
Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
Zheleva, T. S., Nam, O.-H., Bremser, M. D., & Davis, R. F. (1997, October 27). Applied Physics Letters.
1997 article
Gas-source molecular beam epitaxy of III–V nitrides
Davis, R. F., Paisley, M. J., Sitar, Z., Kester, D. J., Ailey, K. S., Linthicum, K., … Kern, R. S. (1997, June 1). Journal of Crystal Growth.
1997 article
Growth and doping via gas-source molecular beam epitaxy of SiC and heterostructures and their microstructural and electrical characterization
Kern, R. S., Järrendahl, K., Tanaka, S., & Davis, R. F. (1997, August 1). Diamond and Related Materials.
1997 article
Growth of AlN and GaN thin films via OMVPE and gas source MBE and their characterization
Davis, R. F., Weeks, T. W., Bremser, M. D., Tanaka, S., Kern, R. S., Sitar, Z., … Wang, C. (1997, February 1). Solid-State Electronics.
1997 article
Growth of AlN, GaN and AlxGa1 − xN thin films on vicinal and on-axis 6HSiC(0001) substrates
Davis, R. F., Bremser, M. D., Perry, W. G., & Ailey, K. S. (1997, January 1). Journal of the European Ceramic Society.
1997 article
Growth of GaN and Al0.2Ga0.8N on Patterened Substrates via Organometallic Vapor Phase Epitaxy
Nam, O.-H., Bremser, M. D., Ward, B. L., Nemanich, R. J., & Davis, R. F. D. R. F. (1997, May 1). Japanese Journal of Applied Physics.
1997 article
Growth, doping and characterization of AlxGa1 − xN thin film alloys on 6H-SiC(0001) substrates
Bremser, M. D., Perry, W. G., Zheleva, T., Edwards, N. V., Nam, O. H., Parikh, N., … Davis, R. F. (1997, March 1). Diamond and Related Materials, Vol. 6, pp. 196–201.
1997 article
High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma
Smith, S. A., Wolden, C. A., Bremser, M. D., Hanser, A. D., Davis, R. F., & Lampert, W. V. (1997, December 22). Applied Physics Letters.
1997 journal article
Homoepitaxial SiC growth by molecular beam epitaxy
Physica Status Solidi. B, Basic Solid State Physics, 202(1), 379–404.
1997 article
Hydrogen incorporation and its temperature stability in SiC crystals
Zavada, J. M., Wilson, R. G., Ren, F., Pearton, S. J., & Davis, R. F. (1997, May 1). Solid-State Electronics.
1997 article
Indentation and microcutting fracture damage in a silicon carbide coating on an Incoloy substrate
Tanikella, B. V., Gruss, K. A., Davis, R. F., & Scattergood, R. O. (1997, January 1). Surface and Coatings Technology.
1997 article
Ion implantation of epitaxial GaN films: damage, doping and activation
Parikh, N., Suvkhanov, A., Lioubtchenko, M., Carlson, E., Bremser, M., Bray, D., … Hunn, J. (1997, May 1). Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms.
1997 journal article
Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
Applied Physics Letters, 71(18), 2698–2640.
1997 article
Low-temperature deposition of optically transparent diamond using a low-pressure flat flame
Wolden, C. A., Davis, R. F., Sitar, Z., & Prater, J. T. (1997, December 1). Diamond and Related Materials.
1997 article
Microstructure, electrical properties, and thermal stability of Au-based ohmic contacts to p-GaN
Smith, L. L., Davis, R. F., Kim, M. J., Carpenter, R. W., & Huang, Y. (1997, September 1). Journal of Materials Research/Pratt's Guide to Venture Capital Sources.
1997 article
Ohmic Contacts To GaN by Solid-Phase Regrowth
Kamińska, E., Piotrowska, A., Barcz, A., Ilka, L., Guziewicz, M., Kasjaniuk, S., … Davis, R. F. (1997, October 1). Acta Physica Polonica A.
1997 article
Optical metastability in bulk GaN single crystals
Shmagin, I. K., Muth, J. F., Lee, J. H., Kolbas, R. M., Balkas, C. M., Sitar, Z., & Davis, R. F. (1997, July 28). Applied Physics Letters.
1997 article
Raman analysis of the configurational disorder in AlxGa1−xN films
Bergman, L., Bremser, M. D., Perry, W. G., Davis, R. F., Dutta, M., & Nemanich, R. J. (1997, October 13). Applied Physics Letters.
1997 journal article
Silicon carbide for high-temperature microelectronics: recent advances in material growth via gas source MBE and device research
Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 46(1-3), 240–247.
1997 article
Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films
Edwards, N. V., Yoo, S. D., Bremser, M. D., Zheleva, T., Horton, M. N., Perkins, N. R., … Aspnes, D. E. (1997, December 1). Materials Science and Engineering B, Vol. 50, pp. 134–141.
1997 article
Sublimation growth and characterization of bulk aluminum nitride single crystals
Balkaş, C. M., Sitar, Z., Zheleva, T., Bergman, L., Nemanich, R., & Davis, R. F. (1997, August 1). Journal of Crystal Growth.
1997 journal article
The composition pulling effect in MOVPE grown InGaN on GaN and AlGaN and its TEM characterization
MRS Internet Journal of Nitride Semiconductor Research, 2(6).
1997 article
Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications
Sowers, A. T., Christman, J. A., Bremser, M. D., Ward, B. L., Davis, R. F., & Nemanich, R. J. (1997, October 20). Applied Physics Letters.
1997 article
Variation of GaN valence bands with biaxial stress and quantification of residual stress
Edwards, N. V., Yoo, S. D., Bremser, M. D., Weeks, T. W., Nam, O. H., Davis, R. F., … Aspnes, D. E. (1997, April 14). Applied Physics Letters, Vol. 70, p. 2001.
1996 conference paper
Growth of bulk AIN and GaN single crystals by sublimation
III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 41–46. Pittsburgh, Pa.: Materials Research Society.
Ed(s):
1996 article
In-Plane Optical Anisotropies of AlxGa1-xN films in their Regions of Transparency
Rossow, U., Edwards, N. V., Bremser, M. D., Kern, R. S., Liu, H., Davis, R. F., & Aspnes, D. E. (1996, January 1). MRS Proceedings, pp. 835–840.
Ed(s):
1996 journal article
Strain-related phenomena in GaN thin films
Physical Review. B, Condensed Matter and Materials Physics, 54(24), 17745–17753.
1996 article
Variation of GaN Valence Bands with Biaxial Stress: Quantification of Residual Stress and Impact on Fundamental Band Parameters
Edwards, N. V., Yoo, S. D., Bremser, M. D., Horton, M. N., Perkins, N. R., Weeks, T. W., … Aspnes, D. E. (1996, January 1). MRS Proceedings, pp. 781–786.
Ed(s):
1995 patent
Germanium doped n-type aluminum nitride epitaxial layers
Washington, DC: U.S. Patent and Trademark Office.
1995 patent
Method of forming platinum ohmic contact to p-type silicon carbide
Washington, DC: U.S. Patent and Trademark Office.
1995 patent
Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
Washington, DC: U.S. Patent and Trademark Office.
1994 patent
Platinum ohmic contact to p-type silicon carbide
Washington, DC: U.S. Patent and Trademark Office.
1993 book
Diamond films and coatings development, properties, and applications
Park Ridge, NJ: Noyes Pub.
1992 patent
Implantation and electrical activation of dopants into monocrystalline silicon carbide
Washington, DC: U.S. Patent and Trademark Office.
1991 patent
Homoepitaxial growth of Alpha-SiC thin films and semiconductor devices fabricated thereon
Washington, DC: U.S. Patent and Trademark Office.
1991 article
III-V nitrides for electronic and optoelectronic applications
Davis, R. F. (1991, May 1). Proceedings of the IEEE.
1991 article
Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide
Davis, R. F., Kelner, G., Shur, M., Palmour, J. W., & Edmond, J. A. (1991, May 1). Proceedings of the IEEE.
1990 patent
Growth of beta-sic thin films and semiconductor devices fabricated thereon
Washington, DC: U.S. Patent and Trademark Office.
1990 patent
Homoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon
Washington, DC: U.S. Patent and Trademark Office.
1990 patent
P-N junction diodes in silicon carbide
Washington, DC: U.S. Patent and Trademark Office.
1989 article
Growth of cubic phase gallium nitride by modified molecular-beam epitaxy
Paisley, M. J., Sitar, Z., Posthill, J. B., & Davis, R. F. (1989, May 1). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.
1989 patent
Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
Washington, DC: U.S. Patent and Trademark Office.