Robert F. Davis

King, S. W., Nemanich, R. J., & Davis, R. F. (2015). Band alignment at AlN/Si (111) and (001) interfaces. JOURNAL OF APPLIED PHYSICS, 118(4). https://doi.org/10.1063/1.4927515

King, S. W., Nemanich, R. J., & Davis, R. F. (2015). Cleaning of pyrolytic hexagonal boron nitride surfaces. SURFACE AND INTERFACE ANALYSIS, 47(7), 798–803. https://doi.org/10.1002/sia.5781

King, S. W., Tanaka, S., Davis, R. F., & Nemanich, R. J. (2015). Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 33(5). https://doi.org/10.1116/1.4921526

King, S. W., Davis, R. F., Carter, R. J., Schneider, T. P., & Nemanich, R. J. (2015). Hydrogen desorption kinetics for aqueous hydrogen fluoride and remote hydrogen plasma processed silicon (001) surfaces. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 33(5). https://doi.org/10.1116/1.4926733

King, S. W., Nemanich, R. J., & Davis, R. F. (2015). Photoemission investigation of the Schottky barrier at the Sc/3C-SiC (111) interface. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 252(2), 391–396. https://doi.org/10.1002/pssb.201451340

King, S. W., Davis, R. F., & Nemanich, R. J. (2014). Desorption and sublimation kinetics for fluorinated aluminum nitride surfaces. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 32(5). https://doi.org/10.1116/1.4891650

King, S. W., Davis, R. F., & Nemanich, R. J. (2014). Gas source molecular beam epitaxy of scandium nitride on silicon carbide and gallium nitride surfaces. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 32(6). https://doi.org/10.1116/1.4894816

King, S. W., Nemanich, R. J., & Davis, R. F. (2014). Valence and conduction band alignment at ScN interfaces with 3C-SiC (111) and 2H-GaN (0001). APPLIED PHYSICS LETTERS, 105(8). https://doi.org/10.1063/1.4894010

Reitmeier, Z. J., Einfeldt, S., Davis, R. F., Zhang, X. Y., Fang, X. L., & Mahajan, S. (2010). Surface and defect microstructure of GaN and AlN layers grown on hydrogen-etched 6H-SiC(0001) substrates. Acta Materialia, 58(6), 2165–2175.

Bishop, S. M., Reynolds, C. L., Molstad, J. C., Stevie, F. A., Barnhardt, D. E., & Davis, R. F. (2009). On the origin of aluminum-related cathodoluminescence emissions from sublimation grown 4H-SiC(11(2)over-bar0). APPLIED SURFACE SCIENCE, 255(13-14), 6535–6539. https://doi.org/10.1016/j.apsusc.2009.02.036

Reitmeier, Z. J., Einfeldt, S., Davis, R. F., Zhang, X., Fang, X., & Mahajan, S. (2009). Sequential growths of AlN and GaN layers on as-polished 6H-SiC(0001) substrates. ACTA MATERIALIA, 57(14), 4001–4008. https://doi.org/10.1016/j.actamat.2009.04.026

King, S. W., Davis, R. F., & Nemanich, R. J. (2008). Kinetics of Ga and In desorption from (7x7)Si(111) and (3x3)6H-SiC(0001) surfaces. SURFACE SCIENCE, 602(2), 405–415. https://doi.org/10.1016/j.susc.2007.10.034

Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F. (2008). Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates. Washington, DC: U.S. Patent and Trademark Office.

Bishop, S. M., Reynolds, C. L., Jr., Liliental-Weber, Z., Uprety, Y., Ebert, C. W., Stevie, F. A., … Davis, R. F. (2008). Sublimation growth of an in-situ-deposited layer in SiC chemical vapor deposition on 4H-SiC(1 1 (2)over-bar 0). JOURNAL OF CRYSTAL GROWTH, 311(1), 72–78. https://doi.org/10.1016/j.jcrysgro.2008.09.200

Barabash, R. I., Ice, G. E., Roder, C., Budai, J., Liu, W., Figge, S., … Davis, R. F. (2007, May). Characterization of growth defects in thin GaN layers with X-ray microbeam. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 244, pp. 1735–1742. https://doi.org/10.1002/pssb.200675113

Adekore, B. T., Davis, R. F., & Barlage, D. W. (2007). Electrical and optical properties of ZnO (000(1)over-bar) wafers implanted with argon. Journal of Applied Physics, 101(2).

Bishop, S. M., Park, J.-S., Gu, J., Wagner, B. P., Reltmeier, Z. J., Batchelor, D. A., … Davis, R. F. (2007, March 1). Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H-SiC (11(2)over-bar0). JOURNAL OF CRYSTAL GROWTH, Vol. 300, pp. 83–89. https://doi.org/10.1016/j.jcrysgro.2006.10.207

Zheleva, T., Thomson, D. B., Smith, S. A., Linthicum, K. J., Gehrke, T., & Davis, R. F. (2007). Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches. Washington, DC: U.S. Patent and Trademark Office.

Adekore, B. T., Pierce, J. M., Davisb, R. F., Barlage, D. W., & Muth, J. F. (2007). Nitrogen acceptors in bulk ZnO (000(1)over-bar)) substrates and homoepitaxial ZnO films. JOURNAL OF APPLIED PHYSICS, 102(2). https://doi.org/10.1063/1.2751097

Gehrke, T., Linthicum, K. J., & Davis, R. F. (2007). Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby. Washington, DC: U.S. Patent and Trademark Office.

Chang, Y. C., Li, Y. L., Thomson, D. B., & Davis, R. F. (2007). Phonon-assisted stimulated emission from pendeoepitaxy GaN stripes grown on 6H-SiC substrates. Applied Physics Letters, 91(5).

Barabash, R. I., Barabash, O. M., Ice, G. E., Roder, C., Figge, S., & Einfeldt, S. (2006). Characterization of crystallographic properties and defects via X-ray microdiffraction in GaN (0001) layers. Physica Status Solidi. A, Applications and Materials Science, 203(1), 142–148.

Chang, Y. C., Kolbas, R. M., Reitmeier, Z. J., & Davis, R. F. (2006). Effect of thermal annealing on the metastable optical properties of GaN thin films. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 24(4), 1051–1054. https://doi.org/10.1116/1.2209656

Wagner, B. P., Reitmeier, Z. J., Park, J. S., Bachelor, D., Zakharov, D. N., Liliental-Weber, Z., & Davis, R. F. (2006). Growth and characterization of pendeo-epitaxial GaN(11(2)over-bar0) on 4H-SiC(11(2)over-bar0) substrates. JOURNAL OF CRYSTAL GROWTH, 290(2), 504–512. https://doi.org/10.1016/j.jcrysgro.2006.02.011

Park, J. S., Reitmeier, Z. J., Fothergill, D., Zhang, X. Y., Muth, J. F., & Davis, R. F. (2006). Growth and fabrication of AlGaN-based ultraviolet light emitting diodes on 6H-SiC(0001) substrates and the effect of carrier-blocking layers on their emission characteristics. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 127(2-3), 169–179. https://doi.org/10.1016/j.mseb.2005.10.019

Balasubramanian, K. R., Chang, K.-C., Mohammad, F. A., Porter, L. M., Salvador, P. A., DiMaio, J., & Davis, R. F. (2006). Growth and structural investigations of epitaxial hexagonal YMnO3 thin films deposited on wurtzite GaN(001) substrates. THIN SOLID FILMS, 515(4), 1807–1813. https://doi.org/10.1016/j.tsf.2006.07.001

Barabash, R. I., Ice, G. E., Liu, W., Roder, C., Figge, S., Einfeldt, S., … Davis, R. F. (2006, June). Mapping misorientation and crystallographic tilt in GaN layers via polychromatic microdiffraction. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 243, pp. 1508–1513. https://doi.org/10.1002/pssb.200565442

Linthicum, K. J., Gehrke, T., & Davis, R. F. (2006). Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby. Washington, DC: U.S. Patent and Trademark Office.

Park, J. S., Fothergill, D. W., Wellenius, P., Bishop, S. M., Muth, J. F., & Davis, R. F. (2006). Origins of parasitic emissions from 353 nm AlGaN-based ultraviolet light emitting diodes over SiC substrates. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45(5A), 4083–4086. https://doi.org/10.1143/jjap.45.4083

Lee, K. J., Lee, J., Hwang, H. D., Reitmeier, Z. J., Davis, R. F., Rogers, J. A., & Nuzzo, R. G. (2005). A  printable form of single-crystalline gallium nitride for flexible optoelectronic systems. Small (Weinheim An Der Bergstrasse, Germany), 1(12), 1164–1168.

Park, J. S., Fothergill, D. W., Zhang, X. Y., Reitmeier, Z. J., Muth, J. F., & Davis, R. F. (2005). Effect of carrier blocking layers on the emission characteristics of AlGaN-based ultraviolet light emitting diodes. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(10), 7254–7259. https://doi.org/10.1143/jjap.44.7254

Pierce, J. M., Adekore, B. T., Davis, R. F., & Stevie, F. A. (2005). Growth of dense ZnO films via MOVPE on GaN(0001) epilayers using a low/high-temperature sequence. JOURNAL OF CRYSTAL GROWTH, 277(1-4), 345–351. https://doi.org/10.1016/j.jcrysgro.2005.01.054

Pierce, J. M., Adekore, B. T., Davis, R. F., & Stevie, F. A. (2005). Homoepitaxial growth of dense ZnO(0001) and ZnO (1120) films via MOVPE on selected ZnO substrates. Journal of Crystal Growth, 283(02-Jan), 147–155.

Bai, J., Huang, X., Dudley, M., Wagner, B., Davis, R. F., Wu, L., … Skromme, B. J. (2005). Intersecting basal plane and prismatic stacking fault structures and their formation mechanisms in GaN. Journal of Applied Physics, 98(6).

Barabash, R. I., Ice, G. E., Liu, W., Einfeldt, S., Roskowski, A. M., & Davis, R. F. (2005). Local strain, defects, and crystallographic tilt in GaN(0001) layers grown by maskless pendeo-epitaxy from x-ray microdiffraction. Journal of Applied Physics, 97(1).

Linthicum, K. J., Gehrke, T., & Davis, R. F. (2005). Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts. Washington, DC: U.S. Patent and Trademark Office.

Kroger, R., Einfeldt, S., Chierchia, R., Hommel, D., Reitmeier, Z. J., Davis, R. F., & Liu, Q. K. K. (2005). On the microstructure of AlxGa1-xN layers grown on 6H-SiC(0001) substrates. Journal of Applied Physics, 97(8).

Egerton, E. J., Sood, A. K., Singh, R., Puri, Y. R., Davis, R. F., Pierce, J., … Steiner, T. (2005, June). P-type doping utilizing nitrogen and Mn doping of ZnO using MOCVD for ultraviolet lasers and spintronic applications. JOURNAL OF ELECTRONIC MATERIALS, Vol. 34, pp. 949–952. https://doi.org/10.1007/s11664-005-0048-y

Hartman, J. D., Naniwae, K., Petrich, C., Nemanich, R., & Davis, R. F. (2005). Photo-electron emission and atomic force microscopies of the hydrogen etched 6H-SiC(0001) surface and the initial growth of GaN and AlN. APPLIED SURFACE SCIENCE, 242(3-4), 428–436. https://doi.org/10.1016/j.apsusc.2004.09.021

Mecouch, W. J., Wagner, B. P., Reitmeier, Z. J., Davis, R. F., Pandarinath, C., Rodriguez, B. J., & Nemanich, R. J. (2005). Preparation and characterization of atomically clean, stoichlometric surfaces of AIN(0001). JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 23(1), 72–77. https://doi.org/10.1116/1.1830497

Zheleva, T., Thomson, D. B., Smith, S. A., Linthicum, K. J., Gehrke, T., & Davis, R. F. (2005). Second gallium nitride layers that extend into trenches in first gallium nitride layers. Washington, DC: U.S. Patent and Trademark Office.

Huang, X. R., Bai, J., Dudley, M., Wagner, B., Davis, R. F., & Zhu, Y. (2005). Step-controlled strain relaxation in the vicinal surface epitaxy of nitrides. Physical Review Letters, 95(8).

Zakharov, D. N., Liliental-Weber, Z., Wagner, B., Reitmeier, Z. J., Preble, E. A., & Davis, R. F. (2005). Structural TEM study of nonpolar a-plane gallium nitride grown on (1120) 4H-SiC by organometallic vapor phase epitaxy. Physical Review. B, Condensed Matter and Materials Physics, 71(23).

Bai, J., Dudley, M., Chen, L., Skromme, B. J., Wagner, B., Davis, R. F., … Dupuis, R. D. (2005). Structural defects and luminescence features in heteroepitaxial GaN grown on on-axis and misoriented substrates. Journal of Applied Physics, 97(11).

Coppa, B. J., Fulton, C. C., Kiesel, S. M., Davis, R. F., Pandarinath, C., Burnette, J. E., … Smith, D. J. (2005). Structural, microstructural, and electrical properties of gold films and Schottky contacts on remote plasma-cleaned, n-type ZnO{0001} surfaces. JOURNAL OF APPLIED PHYSICS, 97(10). https://doi.org/10.1063/1.1898436

Matlock, D. M., Zvanut, M. E., Wang, H. Y., Dimaio, JR, Davis, R. F., Van Nostrand, J. E., … Wickenden, A. (2005). The effects of oxygen, nitrogen, and hydrogen annealing on Mg acceptors in GaN as monitored by electron paramagnetic resonance spectroscopy. JOURNAL OF ELECTRONIC MATERIALS, 34(1), 34–39. https://doi.org/10.1007/s11664-005-0177-3

Yang, P. C., Prater, J. T., Liu, W., Glass, J. T., & Davis, R. F. (2005). The formation of epitaxial hexagonal boron nitride on nickel substrates. JOURNAL OF ELECTRONIC MATERIALS, 34(12), 1558–1564. https://doi.org/10.1007/s11664-005-0165-7

Barabash, R. I., Ice, G. E., Liu, W., Einfeldt, S., Hommel, D., Roskowski, A. M., & Davis, R. F. (2005). White X-ray microbeam analysis of strain and crystallographic tilt in GaN layers grown by maskless pendeoepitaxy. Physica Status Solidi. A, Applications and Materials Science, 202(5), 732–738.

Smith, T. P., McLean, H. A., Smith, D. J., Miraglia, P. Q., Roskowski, A. M., & Davis, R. F. (2004). Growth and characterization of ZnO thin films on GaN epilayers. JOURNAL OF ELECTRONIC MATERIALS, 33(7), 826–832. https://doi.org/10.1007/s11664-004-0249-9

Bishop, S. M., Preble, E. A., Hallin, C., Henry, A., Storasta, L., Jacobson, H., … Davis, R. F. (2004). Growth of homoepitaxial films on 4H-SiC(1120) and 8 degrees off-axis 4H-SiC(0001) substrates and their characterization. In J. C. R. Madar & E. Blanquet (Eds.), Silicon carbide and related materials 2003: ICSCRM2003: Proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003 (Vol. 457-460, pp. 221–224). Utikon-Zurich, Switzerland: Trans Tech Publications.

Paskova, T., Valcheva, E., Paskov, P. P., Monemar, B., Roskowski, A. M., Davis, R. F., … Gibart, P. (2004). HVPE-GaN: comparison of emission properties and microstructure of films grown on different laterally overgrown templates. Diamond and Related Materials, 13(4-8), 1125–1129. https://doi.org/10.1016/j.diamond.2003.10.072

Smith, T. P., McLean, H., Smith, D. J., & Davis, R. F. (2004). Homoepitaxial growth of (0001)- and (000(1)over-bar)-oriented ZnO thin films via metalorganic vapor-phase epitaxy and their characterization. JOURNAL OF CRYSTAL GROWTH, 265(3-4), 390–398. https://doi.org/10.1016/j.jcrysgro.2004.02.096

Coppa, B. J., Fulton, C. C., Hartlieb, P. J., Davis, R. F., Rodriguez, B. J., Shields, B. J., & Nemanich, R. J. (2004). In situ cleaning and characterization of oxygen- and zinc-terminated, n-type, ZnO{0001} surfaces. JOURNAL OF APPLIED PHYSICS, 95(10), 5856–5864. https://doi.org/10.1063/1.1695596

Reitmeier, Z. J., Park, J. S., Mecouch, W. J., & Davis, R. F. (2004). In situ cleaning of GaN(0001) surfaces in a metalorganic vapor phase epitaxy environment. Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 22(5), 2077–2082.

Gehrke, T., Linthicum, K. J., & Davis, R. F. (2004). Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby. Washington, DC: U.S. Patent and Trademark Office.

Grenko, J. A., Reynolds, C. L., Schlesser, R., Bachmann, K., Rietmeier, Z., Davis, R. F., & Sitar, Z. (2004). Selective etching of GaN from AlGaN/GaN and AlN/GaN structures. MRS Internet Journal of Nitride Semiconductor Research, 9(5). https://doi.org/10.1557/s1092578300000405

Smith, N. A., Lamb, H. H., McGinnis, A. J., & Davis, R. F. (2004). Surface-roughness correlations in homoepitaxial growth of GaN(0001) films by NH3 supersonic jet epitaxy. JOURNAL OF APPLIED PHYSICS, 96(8), 4556–4562. https://doi.org/10.1063/1.1785869

Cook, T. E., Fulton, C. C., Mecouch, W. J., Davis, R. F., Lucovsky, G., & Nemanich, R. J. (2003). Band offset measurements of the GaN (0001)/HfO2 interface. Journal of Applied Physics, 94(11), 7155–7158. https://doi.org/10.1063/1.1618374

Cook, T. E., Fulton, C. C., Mecouch, W. J., Davis, R. F., Lucovsky, G., & Nemanich, R. J. (2003). Band offset measurements of the Si3N4/GaN (0001) interface. JOURNAL OF APPLIED PHYSICS, 94(6), 3949–3954. https://doi.org/10.1063/1.1601314

Hartman, J. D., Roskowski, A. M., Reitmeier, Z. J., Tracy, K. M., Davis, R. F., & Nemanich, R. J. (2003). Characterization of hydrogen etched 6H-SiC(0001) substrates and subsequently grown AlN films. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(2), 394–400. https://doi.org/10.1116/1.1539080

Preble, E. A., Miraglia, P. Q., Roskowski, A. M., Vetter, W. M., Dudley, M., & Davis, R. F. (2003). Domain structures in 6H-SiC wafers and their effect on the microstructures of GaN films grown on AlN and Al0.2Ga0.8N buffer layers. JOURNAL OF CRYSTAL GROWTH, 258(1-2), 75–83. https://doi.org/10.1016/S0022-0248(03)01515-X

Tracy, K. M., Hartlieb, P. J., Einfeldt, S., Davis, R. F., Hurt, E. H., & Nemanich, R. J. (2003). Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag. JOURNAL OF APPLIED PHYSICS, 94(6), 3939–3948. https://doi.org/10.1063/1.1598630

Collazo, R., Schlesser, R., Roskowski, A., Miraglia, P., Davis, R. F., & Sitar, Z. (2003). Electron energy distribution during high-field transport in AlN. JOURNAL OF APPLIED PHYSICS, 93(5), 2765–2771. https://doi.org/10.1063/1.1543633

Smith, T. P., Mecouch, W. J., Miraglia, P. Q., Roskowski, A. M., Hartlieb, P. J., & Davis, R. F. (2003). Evolution and growth of ZnO thin films on GaN(0001) epilayers via metalorganic vapor phase epitaxy. JOURNAL OF CRYSTAL GROWTH, 257(3-4), 255–262. https://doi.org/10.1016/S0022-0248(03)01469-6

Usov, I., Parikh, N., Kudriavtsev, Y., Asomoza, R., Reitmeier, Z., & Davis, R. (2003). GaN evaporation and enhanced diffusion of Ar during high-temperature ion implantation. JOURNAL OF APPLIED PHYSICS, 93(9), 5140–5142. https://doi.org/10.1063/1.1564271

Davis, R. F., Einfeldt, S., Preble, E. A., Roskowski, A. M., Reitmeier, Z. J., & Miraglia, P. Q. (2003). Gallium nitride and related materials: challenges in materials processing. ACTA MATERIALIA, 51(19), 5961–5979. https://doi.org/10.1016/j.actamat.2003.08.005

Davis, R. F., & Nam, O.-H. (2003). Gallium nitride semiconductor structure including laterally offset patterned layers. Washington, DC: U.S. Patent and Trademark Office.

Linthicum, K. J., Gehrke, T., & Davis, R. F. (2003). Gallium nitride semiconductor structures fabricated by pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts. Washington, DC: U.S. Patent and Trademark Office.

Davis, R. F., Nam, O.-H., Zheleva, T., & Bremser, M. D. (2003). Gallium nitride semiconductor structures including lateral gallium nitride layers. Washington, DC: U.S. Patent and Trademark Office.

Coppa, B. J., Davis, R. F., & Nemanich, R. J. (2003). Gold Schottky contacts on oxygen plasma-treated, n-type ZnO(000(1)over-bar). APPLIED PHYSICS LETTERS, 82(3), 400–402. https://doi.org/10.1063/1.1536264

Miraglia, P. Q., Preble, E. A., Roskowski, A. M., Einfeldt, S., & Davis, R. F. (2003). Helical-type surface defects in GaN thin films epitaxially grown on GaN templates at reduced temperatures. JOURNAL OF CRYSTAL GROWTH, 253(1-4), 16–25. https://doi.org/10.1016/S0022-0248(03)00970-9

Miraglia, P. Q., Preble, E. A., Roskowski, A. M., Einfeldt, S., Lim, S. H., Liliental-Weber, Z., & Davis, R. F. (2003). Helical-type surface defects in InGaN thin films epitaxially grown on GaN templates at reduced temperatures. THIN SOLID FILMS, 437(1-2), 140–149. https://doi.org/10.1016/S0040-6090(03)00611-4

Jessen, G. H., Fitch, R. C., Gillespie, J. K., Via, G. D., Moser, N. A., Yannuzzi, M. J., … Binari, S. C. (2003). High performance 0.14 mu m gate-length AlGaN/GaN power HEMTs on SiC. IEEE ELECTRON DEVICE LETTERS, 24(11), 677–679. https://doi.org/10.1109/LED.2003.818816

Cook, T. E., Fulton, C. C., Mecouch, W. J., Tracy, K. M., Davis, R. F., Hurt, E. H., … Nemanich, R. J. (2003). Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001). JOURNAL OF APPLIED PHYSICS, 93(7), 3995–4004. https://doi.org/10.1063/1.1559424

Linthicum, K. J., Gehrke, T., Davis, R. F., Thomson, D. B., & Tracy, K. M. (2003). Methods of fabricating gallium nitride microelectronic layers on silicon layers. Washington, DC: U.S. Patent and Trademark Office.

Davis, R. F., Nam, O.-H., Zheleva, T., & Bremser, M. D. (2003). Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth. Washington, DC: U.S. Patent and Trademark Office.

Linthicum, K. J., Gehrke, T., & Davis, R. F. (2003). Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby. Washington, DC: U.S. Patent and Trademark Office.

Schwarz, U. T., Schuck, P. J., Mason, M. D., Grober, R. D., Roskowski, A. M., Einfeldt, S., & Davis, R. F. (2003). Microscopic mapping of strain relaxation in uncoalesced pendeoepitaxial GaN on SiC. Physical Review. B, Condensed Matter and Materials Physics, 67(4), 045321–045321.

Gehrke, T., Linthicum, K. J., & Davis, R. F. (2003). Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates. Washington, DC: U.S. Patent and Trademark Office.

Gehrke, T., Linthicum, K. J., & Davis, R. F. (2003). Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby. Washington, DC: U.S. Patent and Trademark Office.

Tracy, K. M., Mecouch, W. J., Davis, R. F., & Nemanich, R. J. (2003). Preparation and characterization of atomically clean, stoichiometric surfaces of n- and p-type GaN(0001). JOURNAL OF APPLIED PHYSICS, 94(5), 3163–3172. https://doi.org/10.1063/1.1596369

Hartlieb, P. J., Roskowski, A., Davis, R. F., Platow, W., & Nemanich, R. J. (2003, March 15). Response to "Comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' [J. Appl. Phys. 91, 732 (2002)]". JOURNAL OF APPLIED PHYSICS, Vol. 93, pp. 3679–3679. https://doi.org/10.1063/1.1542911

McGinnis, A. J., Thomson, D., Banks, A., Preble, E., Davis, R. F., & Lamb, H. H. (2003). Supersonic jet epitaxy of gallium nitride using triethylgallium and ammonia. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(1), 294–301. https://doi.org/10.1116/1.1532736

Einfeldt, S., Reitmeier, Z. J., & Davis, R. F. (2003). Surface morphology and strain of GaN layers grown using 6H-SiC(0001) substrates with different buffer layers. JOURNAL OF CRYSTAL GROWTH, 253(1-4), 129–141. https://doi.org/10.1016/S0022-0248(03)01039-X

Preble, E. A., McLean, H. A., Kiesel, S. M., Miraglia, P., Albrecht, M., & Davis, R. F. (2002). Application of Nomarski interference contrast microscopy as a thickness monitor in the preparation of transparent, SiG-based, cross-sectional TEM samples. ULTRAMICROSCOPY, 92(3-4), 265–271. https://doi.org/10.1016/S0304-3991(02)00142-0

Hartlieb, P. J., Roskowski, A., Davis, R. F., & Nemanich, R. J. (2002). Chemical, electrical, and structural properties of Ni/Au contacts on chemical vapor cleaned p-type GaN. JOURNAL OF APPLIED PHYSICS, 91(11), 9151–9160. https://doi.org/10.1063/1.1471578

Schuck, P. J., Grober, R. D., Roskowski, A. M., Einfeldt, S., & Davis, R. F. (2002). Cross-sectional imaging of pendeo-epitaxial GaN using continuous-wave two-photon microphotoluminescence. APPLIED PHYSICS LETTERS, 81(11), 1984–1986. https://doi.org/10.1063/1.1506948

Usov, I., Parikh, N., Thomson, D. B., & Davis, R. F. (2002). Effect of implantation temperature on damage accumulation in Ar-implanted GaN. MRS Internet Journal of Nitride Semiconductor Research, 7(9), 9–1.

Preble, E. A., Tracy, K. M., Kiesel, S., McLean, H., Miraglia, P. Q., Nemanich, R. J., … Smith, D. J. (2002). Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor-cleaned GaN thin films. JOURNAL OF APPLIED PHYSICS, 91(4), 2133–2137. https://doi.org/10.1063/1.1432127

Chang, Y. C., Cai, A. L., Johnson, M. A. L., Muth, J. F., Kolbas, R. M., Reitmeier, Z. J., … Davis, R. F. (2002). Electron-beam-induced optical memory effects in GaN. APPLIED PHYSICS LETTERS, 80(15), 2675–2677. https://doi.org/10.1063/1.1469222

Davis, R. F., Roskowski, A. M., Preble, E. A., Speck, J. S., Heying, B., Freitas, J. A., … Carlos, W. E. (2002). Gallium nitride materials - Progress, status, and potential roadblocks. PROCEEDINGS OF THE IEEE, 90(6), 993–1005. https://doi.org/10.1109/JPROC.2002.1021564

Shin, H., Arkun, E., Thomson, D. B., Miraglia, P., Preble, E., Schlesser, R., … Davis, R. F. (2002). Growth and decomposition of bulk GaN: role of the ammonia/nitrogen ratio. JOURNAL OF CRYSTAL GROWTH, 236(4), 529–537. https://doi.org/10.1016/S0022-0248(02)00825-4

Shin, H., Thomson, D. B., Schlesser, R., Davis, R. F., & Sitar, Z. (2002). High temperature nucleation and growth of GaN crystals from the vapor phase. JOURNAL OF CRYSTAL GROWTH, 241(4), 404–415. https://doi.org/10.1016/S0022-0248(02)01290-3

Gehrke, T., Linthicum, K. J., Davis, R. F., & Thomson, D. B. (2002). High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates. Washington, DC: U.S. Patent and Trademark Office.

Roskowski, A. M., Preble, E. A., Einfeldt, S., Miraglia, P. M., & Davis, R. F. (2002). Investigations regarding the maskless pendeo-epitaxial growth of GaN films prior to coalescence. IEEE JOURNAL OF QUANTUM ELECTRONICS, 38(8), 1006–1016. https://doi.org/10.1109/JQE.2002.801005

Roskowski, A. M., Preble, E. A., Einfeldt, S., Miraglia, P. M., & Davis, R. F. (2002, May). Maskless pendeo-epitaxial growth of GaN films. JOURNAL OF ELECTRONIC MATERIALS, Vol. 31, pp. 421–428. https://doi.org/10.1007/s11664-002-0095-6

Linthicum, K. J., Gehrke, T., & Davis, R. F. (2002). Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts. Washington, DC: U.S. Patent and Trademark Office.

Gehrke, T., Linthicum, K. J., & Davis, R. F. (2002). Methods of forming compound semiconductor layers using spaced trench arrays and semiconductor substrates formed thereby. Washington, DC: U.S. Patent and Trademark Office.

Hartlieb, P. J., Roskowski, A., Davis, R. F., Platow, W., & Nemanich, R. J. (2002). Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces. JOURNAL OF APPLIED PHYSICS, 91(2), 732–738. https://doi.org/10.1063/1.1424060

Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F. (2002). Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates. Washington, DC: U.S. Patent and Trademark Office.

Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F. (2002). Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, ang gallium nitratde semiconductor structures fabricated thereby. Washington, DC: U.S. Patent and Trademark Office.

Linthicum, K. J., Gehrke, T., & Davis, R. F. (2002). Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby. Washington, DC: U.S. Patent and Trademark Office.

Bergman, L., Chen, X. B., McIlroy, D., & Davis, R. F. (2002). Probing the AlxGa1-xN spatial alloy fluctuation via UV-photoluminescence and Raman at submicron scale. APPLIED PHYSICS LETTERS, 81(22), 4186–4188. https://doi.org/10.1063/1.1526918

Roskowski, A. M., Preble, E. A., Einfeldt, S., Miraglia, P. M., Schuck, J., Grober, R., & Davis, R. F. (2002). Reduction in dislocation density and strain in GaN thin films grown via maskless pendeo-epitaxy. Opto-Electronics Review, 10(4), 261–270.

Einfeldt, S., Roskowski, A. M., Preble, E. A., & Davis, R. F. (2002). Strain and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeoepitaxy. APPLIED PHYSICS LETTERS, 80(6), 953–955. https://doi.org/10.1063/1.1448145

Einfeldt, S., Diesselberg, M., Heinke, H., Hommel, D., Rudloff, D., Christen, J., & Davis, R. F. (2002). Strain in cracked AlGaN layers. JOURNAL OF APPLIED PHYSICS, 92(1), 118–123. https://doi.org/10.1063/1.1481969

Roskowski, A. M., Miraglia, P. Q., Preble, E. A., Einfeldt, S., & Davis, R. F. (2002). Surface instability and associated roughness during conventional and pendeo-epitaxial growth of GaN(0001) films via MOVPE. JOURNAL OF CRYSTAL GROWTH, 241(1-2), 141–150. https://doi.org/10.1016/S0022-0248(02)00943-0

Danielsson, E., Zetterling, C. M., Ostling, M., Linthicum, K., Thomson, D. B., Nam, O. H., & Davis, R. F. (2002). The influence of band offsets on the IV characteristics for GaN/SiC heterojunctions. SOLID-STATE ELECTRONICS, 46(6), 827–835. https://doi.org/10.1016/S0038-1101(01)00346-X

Platow, W., Oh, J., Nemanich, R. J., Sayers, D. E., Hartman, J. D., & Davis, R. F. (2002). TiC nanoisland formation on 6H-SiC(0001)(Si). JOURNAL OF APPLIED PHYSICS, 91(9), 6081–6084. https://doi.org/10.1063/1.1465121

Davis, R. F., Gehrke, T., Linthicum, K. J., Preble, E., Rajagopal, P., Ronning, C., … Mehregany, M. (2001, October). Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates. JOURNAL OF CRYSTAL GROWTH, Vol. 231, pp. 335–341. https://doi.org/10.1016/S0022-0248(01)01462-2

Platow, W., Nemanich, R. J., Sayers, D. E., Hartman, J. D., & Davis, R. F. (2001). Growth of epitaxial CoSi2 on 6H-SiC(0001)(Si). JOURNAL OF APPLIED PHYSICS, 90(12), 5924–5927. https://doi.org/10.1063/1.1412842

McGinnis, A. J., Thomson, D., Davis, R. F., Chen, E., Michel, A., & Lamb, H. H. (2001). In situ cleaning of GaN/6H-SiC substrates in NH3. JOURNAL OF CRYSTAL GROWTH, 222(3), 452–458. https://doi.org/10.1016/s0022-0248(00)00947-7

Ronning, C., Carlson, E. P., & Davis, R. F. (2001). [Review of Ion implantation into gallium nitride]. PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 351(5), 349–385. https://doi.org/10.1016/S0370-1573(00)00142-3

McGinnis, A. J., Thomson, D., Davis, R. F., Chen, E., Michel, A., & Lamb, H. H. (2001). Kinetics and gas-surface dynamics of GaN homoepitaxial growth using NH3-seeded supersonic molecular beams. SURFACE SCIENCE, 494(1), 28–42. https://doi.org/10.1016/S0039-6028(01)01466-2

Zheleva, T. S., Nam, O. H., Ashmawi, W. M., Griffin, J. D., & Davis, R. F. (2001). Lateral epitaxy and dislocation density reduction in selectively grown GaN structures. JOURNAL OF CRYSTAL GROWTH, 222(4), 706–718. https://doi.org/10.1016/S0022-0248(00)00832-0

Linthicum, K. J., Gehrke, T., Davis, R. F., Thomson, D. B., & Tracy, K. M. (2001). Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby. Washington, DC: U.S. Patent and Trademark Office.

Zheleva, T., Thomson, D. B., Smith, S. A., Linthicum, K. J., Gehrke, T., & Davis, R. F. (2001). Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby. Washington, DC: U.S. Patent and Trademark Office.

Gehrke, T., Linthicum, K. J., & Davis, R. F. (2001). Methods of forming a plurality of semiconductor layers using spaced trench arrays. Washington, DC: U.S. Patent and Trademark Office.

Chang, Y. C., Oberhofer, A. E., Muth, J. F., Kolbas, R. M., & Davis, R. F. (2001). Optical metastability of subband gap (2.2 eV) yellow luminescence in GaN. APPLIED PHYSICS LETTERS, 79(3), 281–283. https://doi.org/10.1063/1.1381417

Davis, R. F., Gehrke, T., Linthicum, K. J., Zheleva, T. S., Rajagopal, P., Zorman, C. A., & Mehregany, M. (2001). Pendeo-epitaxial growth and characterization of thin films of gallium nitride and related materials on SiC(0001) and si(111) substrates. Zeitschrift Fur MetallkundeAmerican Journal of Physiology, 92(2), 163–166.

Davis, R. F., Gehrke, T., Linthicum, K. J., Zheleva, T. S., Preble, E. A., Rajagopal, P., … Mehregany, M. (2001, May). Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization. JOURNAL OF CRYSTAL GROWTH, Vol. 225, pp. 134–140. https://doi.org/10.1016/S0022-0248(01)00836-3

Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F. (2001). Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates. Washington, DC: U.S. Patent and Trademark Office.

Teng, C. W., Aboelfotoh, M. O., Davis, R. F., Muth, J. F., & Kolbas, R. M. (2001). Photoluminescence and electrical characteristics of the two-dimensional electron gas in Si delta-doped GaN layers. APPLIED PHYSICS LETTERS, 78(12), 1688–1690. https://doi.org/10.1063/1.1353836

Jia, L., Yu, E. T., Keogh, D., Asbeck, P. M., Miraglia, P., Roskowski, A., & Davis, R. F. (2001). Polarization charges and polarization-induced barriers in AlxGa1-xN/GaN and InyGa1-yN/GaN heterostructures. APPLIED PHYSICS LETTERS, 79(18), 2916–2918. https://doi.org/10.1063/1.1412594

Davis, R. F., Gehrke, T., Linthicum, K. J., Rajagopal, P., Roskowski, A. M., Zheleva, T., … Grober, R. (2001). Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates. MRS Internet Journal of Nitride Semiconductor Research, 6(14), 1–16.

Roskowski, A. M., Miraglia, P. Q., Preble, E. A., Einfeldt, S., Stiles, T., Davis, R. F., … Schwarz, U. (2001). Strain and dislocation reduction in maskless pendeo-epitaxy GaN thin films. Physica Status Solidi. A, Applications and Materials Science, 188(2), 729–732. https://doi.org/10.1002/1521-396x(200112)188:2<729::aid-pssa729>3.0.co;2-w

Pozina, G., Edwards, N. V., Bergman, J. P., Monemar, B., Bremser, M. D., & Davis, R. F. (2001). Time-resolved photoluminescence in strained GaN layers. Physica Status Solidi. A, Applications and Materials Science, 183(1), 151–155.

Pozina, G., Edwards, N. V., Bergman, J. P., Paskova, T., Monemar, B., Bremser, M. D., & Davis, R. F. (2001). Time-resolved spectroscopy of strained GaN/AlN/6H-SiC heterostructures grown by metalorganic chemical vapor deposition. APPLIED PHYSICS LETTERS, 78(8), 1062–1064. https://doi.org/10.1063/1.1350421

Liaw, H. M., Doyle, R., Fejes, P. L., Zollner, S., Konkar, A., Linthicum, K. J., … Davis, R. F. (2000). Crystallinity and microstructures of aluminum nitride films deposited on Si(111) substrates. SOLID-STATE ELECTRONICS, 44(4), 747–755. https://doi.org/10.1016/S0038-1101(99)00307-X

Danielsson, E., Zetterling, C. M., Ostling, M., Lee, S. K., Linthicum, K. J., Thomson, D. B., … Davis, R. F. (2000). Dry etching and metallization schemes in a GaN/SiC heterojunction device process. Materials Science Forum, 338(3), 1049–1052.

Davis, R. F., Nam, O.-H., Zheleva, T., & Bremser, M. D. (2000). Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer. Washington, DC: U.S. Patent and Trademark Office.

Balkas, C. M., Sitar, Z., Bergman, L., Shmagin, I. K., Muth, J. F., Kolbas, R., … Davis, R. F. (2000). Growth and characterization of GaN single crystals. JOURNAL OF CRYSTAL GROWTH, 208(1-4), 100–106. https://doi.org/10.1016/S0022-0248(99)00445-5

Michel, A., Hanser, D., Davis, R. F., Qiao, D., Lau, S. S., Yu, L. S., … Asbeck, P. (2000). Growth and characterization of piezoelectrically enhanced acceptor-type AlGaN/GaN heterostructures. MRS Internet Journal of Nitride Semiconductor Research, 5, U520–525.

Hanser, A. D., Banks, A. D., Davis, R. F., Jahnen, B., Albrecht, M., Dorsch, W., … Strunk, H. P. (2000). Growth and microstructure of InxGa1-xN films grown on SiC substrates via low pressure metalorganic vapor phase epitaxy. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 3(3), 163–171. https://doi.org/10.1016/S1369-8001(99)00023-2

Collazo, R., Schlesser, R., Roskowski, A., Davis, R. F., & Sitar, Z. (2000). Hot electron transport in AlN. JOURNAL OF APPLIED PHYSICS, 88(10), 5865–5869. https://doi.org/10.1063/1.1318386

Suvkhanov, A., Parikh, N., Usov, I., Hunn, J., Withrow, S., Thomson, D., … Krasnobaev, L. Y. (2000). Influence of annealing conditions on dopant activation of Si+ and Mg+ implanted GaN. Materials Science Forum, 338(3), 1615–1618.

Ronning, C., Dalmer, M., Uhrmacher, M., Restle, M., Vetter, U., Ziegeler, L., … Davis, R. F. (2000). Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery. JOURNAL OF APPLIED PHYSICS, 87(5), 2149–2157. https://doi.org/10.1063/1.372154

Davis, R. F., Nam, O. H., Zheleva, T. S., Gehrke, T., Linthicum, K. J., & Rajagopal, P. (2000). Lateral- and pendeo-epitaxial growth and defect reduction in GaN thin films. Materials Science Forum, 338(3), 1471–1476.

Edwards, N. V., Bremser, M. D., Batchelor, A. D., Buyanova, I. A., Madsen, L. D., Yoo, S. D., … Monemar, B. (2000, March 27). Optical characterization of wide bandgap semiconductors. THIN SOLID FILMS, Vol. 364, pp. 98–106. https://doi.org/10.1016/S0040-6090(99)00903-7

Davis, R. F., Gehrke, T., Linthicum, K. J., Zheleva, T. S., Rajagopal, P., Zorman, C. A., & Mehregany, M. (2000). Pendeo-epitaxial growth and characterization of GaN and related materials on (6H-SiC(0001) and Si(111) substrates. MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U46–57.

Gehrke, T., Linthicum, K. J., Preble, E., Rajagopal, P., Ronning, C., Zorman, C., … Davis, R. F. (2000). Pendeo-epitaxial growth of gallium nitride on silicon substrates. JOURNAL OF ELECTRONIC MATERIALS, 29(3), 306–310. https://doi.org/10.1007/s11664-000-0068-6

Gehrke, T., Linthicum, K. J., Rajagopal, P., Preble, E. A., Carlson, E. P., Robin, B. M., & Davis, R. F. (2000). Pendeo-epitaxy (TM) process for aluminum gallium nitride thin films on silicon carbide substrates via metalorganic chemical vapor deposition. Materials Science Forum, 338(3), 1491–1494.

Hartman, J. D., Naniwae, K., Petrich, C., Ramachandran, V., Feenstra, R. M., Nemanich, R. J., & Davis, R. F. (2000). Photo-emission electron microscopy (PEEM) of cleaned and etched 6H-SiC(0001). SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, Vol. 338-3, pp. 353–356. https://doi.org/10.4028/www.scientific.net/msf.338-342.353

Ronning, C., Hofsass, H., Stotzler, A., Deicher, M., Carlson, E. P., Hartlieb, P. J., … Davis, R. F. (2000). Photoluminescence characterization of Mg implanted GaN. MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U622–628.

Ward, B. L., Hartman, J. D., Hurt, E. H., Tracy, K. M., Davis, R. F., & Nemanich, R. J. (2000). Schottky barrier height and electron affinity of titanium on AIN. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 18, pp. 2082–2087. https://doi.org/10.1116/1.1303733

Smith, S. A., Lampert, W. V., Rajagopal, P., Banks, A. D., Thomson, D., & Davis, R. F. (2000). Selective etching of GaN over AlN using an inductively coupled plasma and an O-2/Cl-2/Ar chemistry. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 18(3), 879–881. https://doi.org/10.1116/1.582270

Zetterling, C. M., Ostling, M., Yano, H., Kimoto, T., Matsunami, H., Linthicum, K., & Davis, R. F. (2000). SiC MISFETs with MBE-grown AlN gate dielectric. Materials Science Forum, 338(3), 1315–1318.

Kaminska, E., Piotrowska, A., Barcz, A., Jasinski, J., Zielinski, M., Golaszewska, K., … Tomsia, K. (2000). Zirconium mediated hydrogen outdiffusion from p-GaN. MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U491–496.

Gruss, K. A., & Davis, R. F. (1999). Adhesion measurement of zirconium nitride and amorphous silicon carbide coatings to nickel and titanium alloys. SURFACE & COATINGS TECHNOLOGY, 114(2-3), 156–168. https://doi.org/10.1016/S0257-8972(99)00042-0

Ronning, C., Linthicum, K. J., Carlson, E. P., Hartlieb, P. J., Thomson, D. B., Gehrke, T., & Davis, R. F. (1999). Characterization of Be-implanted GaN annealed at high temperatures. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.17).

Therrien, R., Niimi, H., Gehrke, T., Lucovsky, G., & Davis, R. (1999, September). Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces. MICROELECTRONIC ENGINEERING, Vol. 48, pp. 303–306. https://doi.org/10.1016/s0167-9317(99)00394-9

Therrien, R., Lucovsky, G., & Davis, R. F. (1999, November 16). Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Vol. 176, pp. 793–796. https://doi.org/10.1002/(sici)1521-396x(199911)176:1<793::aid-pssa793>3.0.co;2-v

King, S. W., Kern, R. S., Benjamin, M. C., Barnak, J. P., Nemanich, R. J., & Davis, R. F. (1999). Chemical vapor cleaning of 6H-SiC surfaces. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(9), 3448–3454. https://doi.org/10.1149/1.1392494

King, S. W., Nemanich, R. J., & Davis, R. F. (1999). Dry ex situ cleaning processes for (0001)(Si) 6H-SiC surfaces. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(7), 2648–2651. https://doi.org/10.1149/1.1391986

Roberson, S. L., Finello, D., & Davis, R. F. (1999). Electrochemical evaluation of molybdenum nitride electrodes in H2SO4 electrolyte. JOURNAL OF APPLIED ELECTROCHEMISTRY, 29(1), 75–80. https://doi.org/10.1023/A:1003460529736

Buyanova, I. A., Wagner, M., Chen, W. M., Edwards, N. V., Monemar, B., Lindstrom, J. L., … Akasaki, I. (1999). Electronic structure of the 0.88-eV luminescence center in electron-irradiated gallium nitride. Physical Review. B, Condensed Matter and Materials Physics, 60(3), 1746–1751.

Skierbiszewski, C., Suski, T., Leszczynski, M., Shin, M., Skowronski, M., Bremser, M. D., & Davis, R. F. (1999). Evidence for localized Si-donor state and its DX-like properties in AlGaN: Errata (vol 74, pg 3833, 1999). Applied Physics Letters, 75(20), 3225A.

Skierbiszewski, C., Suski, T., Leszczynski, M., Shin, M., Skowronski, M., Bremser, M. D., & Davis, R. F. (1999). Evidence for localized Si-donor state and its metastable properties in AlGaN. APPLIED PHYSICS LETTERS, 74(25), 3833–3835. https://doi.org/10.1063/1.124195

Hanser, A. D., Nam, O. H., Bremser, M. D., Thomson, D. B., Gehrke, T., Zheleva, T. S., & Davis, R. F. (1999, March). Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1-xN. DIAMOND AND RELATED MATERIALS, Vol. 8, pp. 288–294. https://doi.org/10.1016/S0925-9635(98)00341-0

Roberson, S. L., Finello, D., & Davis, R. F. (1999). High surface area molybdenum nitride electrodes. Washington, DC: U.S. Patent and Trademark Office.

Pavlovska, A., Torres, V. M., Edwards, J. L., Bauer, E., Smith, D. J., Doak, R. B., … Davis, R. F. (1999). Homoepitaxial GaN layers studied by low-energy electron microscopy, atomic force microscopy and transmission electronmicroscopy. Physica Status Solidi. A, Applications and Materials Science, 176(1), 469–473.

Nemanich, R. J., English, S. L., Hartman, J. D., Sowers, A. T., Ward, B. L., Ade, H., & Davis, R. F. (1999, May). Imaging electron emission from diamond and III-V nitride surfaces with photo-electron emission microscopy. APPLIED SURFACE SCIENCE, Vol. 146, pp. 287–294. https://doi.org/10.1016/S0169-4332(99)00021-5

Pavlovska, A., Torres, V. M., Bauer, E., Doak, R. B., Tsong, I. S. T., Thomson, D. B., & Davis, R. F. (1999). Low-energy electron microscopy observations of GaN homoepitaxy using a supersonic jet source. APPLIED PHYSICS LETTERS, 75(7), 989–991. https://doi.org/10.1063/1.124575

Smith, L. L., Davis, R. F., Liu, R. J., Kim, M. J., & Carpenter, R. W. (1999). Microstructure, electrical properties, and thermal stability of Ti-based ohmic contacts to n-GaN. JOURNAL OF MATERIALS RESEARCH, 14(3), 1032–1038. https://doi.org/10.1557/JMR.1999.0137

Kaminska, E., Piotrowska, A., Jasinski, J., Kozubowski, J., Barcz, A., Golaszewska, K., … Bremser, M. D. (1999). Ni/Si-based contacts to GaN: Thermally activated structural transformations leading to ohmic behavior. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G9.9).

Chao, Y. C., Stagarescu, C. B., Downes, J. E., Ryan, P., Smith, K. E., Hanser, D., … Davis, R. F. (1999). Observation of highly dispersive surface states on GaN(0001)1x1. Physical Review. B, Condensed Matter and Materials Physics, 59(24), R15586–15589.

Gehrke, T., Linthicum, K. J., Thomson, D. B., Rajagopal, P., Batchelor, A. D., & Davis, R. F. (1999). Pendeo-epitaxy of gallium nitride and aluminum nitride films and heterostructures on silicon carbide substrate. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.2).

Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., Smith, T., … Davis, R. (1999). Pendeo-epitaxy of gallium nitride thin films. Applied Physics Letters, 75(2), 196–198. https://doi.org/10.1063/1.124317

Zheleva, T. S., Smith, S. A., Thomson, D. B., Linthicum, K. J., Rajagopal, P., & Davis, R. F. (1999). Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films.

Zheleva, T. S., Smith, S. A., Thomson, D. B., Gehrke, T., Linthicum, K. J., Rajagopal, P., … Davis, R. F. (1999). Pendeo-epitaxy: A new approach for lateral growth of gallium nitride structures. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.38).

Bergman, L., Alexson, D., Nemanich, R. J., Dutta, M., Stroscio, M. A., Balkas, C., & Davis, R. F. (1999). Phonon dynamics and lifetimes of AlN and GaN crystallites. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G6.65). https://doi.org/10.1557/s1092578300003422

Linthicum, K. J., Gehrke, T., Thomson, D. B., Tracy, K. M., Carlson, E. P., Smith, T. P., … Davis, R. F. (1999). Process routes for low defect-density GaN on various substrates employing pendeo-epitaxial growth techniques. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.9).

Bergman, L., Alexson, D., Murphy, P. L., Nemanich, R. J., Dutta, M., Stroscio, M. A., … Davis, R. F. (1999). Raman analysis of phonon lifetimes in AlN and GaN of wurtzite structure. PHYSICAL REVIEW B, 59(20), 12977–12982. https://doi.org/10.1103/physrevb.59.12977

Bergman, L., Dutta, M., Balkas, C., Davis, R. F., Christman, J. A., Alexson, D., & Nemanich, R. J. (1999). Raman analysis of the E1 and A1 quasi-longitudinal optical and quasi-transverse optical modes in wurtzite AlN. JOURNAL OF APPLIED PHYSICS, 85(7), 3535–3539. https://doi.org/10.1063/1.369712

Thomson, D. B., Gehrke, T., Linthicum, K. J., Rajagopal, P., & Davis, R. F. (1999). Ranges of deposition temperatures applicable for metalorganic vapor phase epitaxy of GaN films via the technique of pendeo- epitaxy. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.37).

Edwards, N. V., Batchelor, A. D., Buyanova, I. A., Madsen, L. D., Bremser, M. D., Davis, R. F., … Monemar, B. (1999). Relaxation phenomena in GaN/ AlN/ 6H-SiC heterostructures. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.78). https://doi.org/10.1557/s1092578300002830

Danielsson, E., Zetterling, C. M., Ostling, M., Breitholtz, B., Linthicum, K., Thomson, D. B., … Davis, R. F. (1999). Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes. Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 61-2(1999 July 30), 320–324.

Bidnyk, S., Little, B. D., Schmidt, T. J., Cho, Y. H., Krasinski, J., Song, J. J., … Davis, R. F. (1999). Stimulated emission in GaN thin films in the temperature range of 300-700 K. JOURNAL OF APPLIED PHYSICS, 85(3), 1792–1795. https://doi.org/10.1063/1.369325

Zheleva, T. S., Ashmawi, W. M., Nam, O. H., & Davis, R. F. (1999). Thermal mismatch stress relaxation via lateral epitaxy in selectively grown GaN structures. APPLIED PHYSICS LETTERS, 74(17), 2492–2494. https://doi.org/10.1063/1.123017

King, S. W., Davis, R. F., Ronning, C., & Nemanich, R. J. (1999). Valence band discontinuity of the (0001) 2H-GaN/(111) 3C-SiC interface. JOURNAL OF ELECTRONIC MATERIALS, 28(12), L34–L37. https://doi.org/10.1007/s11664-999-0145-4

King, S. W., Davis, R. F., Ronning, C., Benjamin, M. C., & Nemanich, R. J. (1999). Valence band discontinuity, surface reconstruction, and chemistry of (0001), (000(1)over-bar), and (1(1)over-bar-00) 2H-AlN/6H-SiC interfaces. JOURNAL OF APPLIED PHYSICS, 86(8), 4483–4490. https://doi.org/10.1063/1.371391

King, S. W., Nemanich, R. J., & Davis, R. F. (1999). Wet chemical processing of (0001)(Si) 6H-SiC hydrophobic and hydrophilic surfaces. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(5), 1910–1917. https://doi.org/10.1149/1.1391864

King, S. W., Carlson, E. P., Therrien, R. J., Christman, J. A., Nemanich, R. J., & Davis, R. F. (1999). X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms. JOURNAL OF APPLIED PHYSICS, 86(10), 5584–5593. https://doi.org/10.1063/1.371564

Ade, H., Yang, W., English, S. L., Hartman, J., Davis, R. F., Nemanich, R. J., … Madey, J. M. J. (1998). A free electron laser-photoemission electron microscope system (FEL-PEEM). SURFACE REVIEW AND LETTERS, 5(6), 1257–1268. https://doi.org/10.1142/S0218625X98001596

Bremser, M. D., Perry, W. G., Nam, O. H., Griffis, D. P., Loesing, R., Ricks, D. A., & Davis, R. F. (1998, April). Acceptor and donor doping of AlxGa1-xN thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy. JOURNAL OF ELECTRONIC MATERIALS, Vol. 27, pp. 229–232. https://doi.org/10.1007/s11664-998-0392-9

Kern, R. S., Rowland, L. B., Tanaka, S., & Davis, R. F. (1998). Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy. JOURNAL OF MATERIALS RESEARCH, 13(7), 1816–1822. https://doi.org/10.1557/JMR.1998.0257

Hanser, A. D., Wolden, C. A., Perry, W. G., Zheleva, T., Carlson, E. P., Banks, A. D., … Davis, R. F. (1998, April). Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AlN and GaN thin films on alpha(6H)-SiC substrates. JOURNAL OF ELECTRONIC MATERIALS, Vol. 27, pp. 238–245. https://doi.org/10.1007/s11664-998-0394-7

Perry, W. G., Bremser, M. B., Zheleva, T., Linthicum, K. J., & Davis, R. F. (1998). Biaxial strain in AlxGa1-xN/GaN layers deposited on 6H-SiC. THIN SOLID FILMS, 324(1-2), 107–114. https://doi.org/10.1016/S0040-6090(97)01217-0

Perry, W. G., Bremser, M. B., & Davis, R. F. (1998). Cathodoluminescence studies of the deep level emission bands of AlxGa1-xN films deposited on 6H-SiC(0001). JOURNAL OF APPLIED PHYSICS, 83(1), 469–475. https://doi.org/10.1063/1.366716

Gruss, K. A., Zheleva, T., Davis, R. F., & Watkins, T. R. (1998). Characterization of zirconium nitride coatings deposited by cathodic arc sputtering. SURFACE & COATINGS TECHNOLOGY, 107(2-3), 115–124. https://doi.org/10.1016/S0257-8972(98)00584-2

King, S. W., Barnak, J. P., Bremser, M. D., Tracy, K. M., Ronning, C., Davis, R. F., & Nemanich, R. J. (1998). Cleaning of AlN and GaN surfaces. JOURNAL OF APPLIED PHYSICS, 84(9), 5248–5260. https://doi.org/10.1063/1.368814

Yang, P. C., Wolden, C. A., Liu, W., Schlesser, R., Davis, R. F., Prater, J. T., & Sitar, Z. (1998). Coalesced oriented diamond films on nickel. JOURNAL OF MATERIALS RESEARCH, 13(5), 1120–1123. https://doi.org/10.1557/JMR.1998.0157

King, S. W., Ronning, C., Davis, R. F., Benjamin, M. C., & Nemanich, R. J. (1998). Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction. JOURNAL OF APPLIED PHYSICS, 84(4), 2086–2090. https://doi.org/10.1063/1.368355

Ward, B. L., Nam, O. H., Hartman, J. D., English, S. L., McCarson, B. L., Schlesser, R., … Nemanich, R. J. (1998). Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy. JOURNAL OF APPLIED PHYSICS, 84(9), 5238–5242. https://doi.org/10.1063/1.368775

Nemanich, R. J., Baumann, P. K., Benjamin, M. C., Nam, O. H., Sowers, A. T., Ward, B. L., … Davis, R. F. (1998, June). Electron emission properties of crystalline diamond and III-nitride surfaces. APPLIED SURFACE SCIENCE, Vol. 130, pp. 694–703. https://doi.org/10.1016/s0169-4332(98)00140-8

Joshkin, V. A., Parker, C. A., Bedair, S. M., Krasnobaev, L. Y., Cuomo, J. J., Davis, R. F., & Suvkhanov, A. (1998). Fine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiC. APPLIED PHYSICS LETTERS, 72(22), 2838–2840. https://doi.org/10.1063/1.121474

Wolden, C. A., Davis, R. F., Sitar, Z., & Prater, J. T. (1998, February). Flat-flame diamond CVD: the effect of pressure and operating conditions for specific applications. DIAMOND AND RELATED MATERIALS, Vol. 7, pp. 133–138. https://doi.org/10.1016/S0925-9635(97)00206-9

Roberson, S. L., Finello, D., Banks, A. D., & Davis, R. F. (1998). Growth of Fe3N films via chemical vapor deposition of iron acetylacetonate and anhydrous ammonia.

Roberson, S. L., Finello, D., & Davis, R. F. (1998). Growth of MoxN films via chemical vapor deposition of MoCl5 and NH3. SURFACE & COATINGS TECHNOLOGY, 102(3), 256–259. https://doi.org/10.1016/S0257-8972(98)00448-4

Jarrendahl, K., Smith, S. A., Zheleva, T., Kern, R. S., & Davis, R. F. (1998, March). Growth of highly (0001)-oriented aluminum nitride thin films with smooth surfaces on silicon carbide by gas-source molecular beam epitaxy. VACUUM, Vol. 49, pp. 189–191. https://doi.org/10.1016/S0042-207X(97)00177-2

Kaminska, E., Piotrowska, A., Jasinski, J., Kozubowski, J., Barcz, A., Golaszewska, K., … Davis, R. F. (1998, September). Interfacial microstructure of Ni/Si-based ohmic contacts to GaN. ACTA PHYSICA POLONICA A, Vol. 94, pp. 383–386. https://doi.org/10.12693/APhysPolA.94.383

Shan, W., Fischer, A. J., Hwang, S. J., Little, B. D., Hauenstein, R. J., Xie, X. C., … Davis, R. F. (1998). Intrinsic exciton transitions in GaN. JOURNAL OF APPLIED PHYSICS, 83(1), 455–461. https://doi.org/10.1063/1.366660

Wisniewski, P., Knap, W., Malzac, J. P., Camassel, J., Bremser, M. D., Davis, R. F., & Suski, T. (1998). Investigation of optically active E-1 transversal optic phonon modes in AlxGa1-xN layers deposited on 6H-SiC substrates using infrared reflectance. APPLIED PHYSICS LETTERS, 73(13), 1760–1762. https://doi.org/10.1063/1.122273

Nam, O. H., Zheleva, T. S., Bremser, M. D., & Davis, R. F. (1998, April). Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy. JOURNAL OF ELECTRONIC MATERIALS, Vol. 27, pp. 233–237. https://doi.org/10.1007/s11664-998-0393-8

Dalmer, M., Restle, M., Sebastian, M., Vetter, U., Hofsass, H., Bremser, M. D., … Bharuth-Ram, K. (1998). Lattice site location studies of ion implanted Li-8 in GaN. JOURNAL OF APPLIED PHYSICS, 84(6), 3085–3089. https://doi.org/10.1063/1.368463

Jarrendahl, K., & Davis, R. F. (1998). Materials properties and characterization of SiC. SIC MATERIALS AND DEVICES, 52, 1–20. https://doi.org/10.1016/S0080-8784(08)62843-4

Roberson, S. L., Finello, D., & Davis, R. F. (1998). Microstructural factors influencing the properties of high surface area molybdenum nitride films converted from molybdenum trioxide films deposited via solution spray pyrolysis. JOURNAL OF MATERIALS RESEARCH, 13(8), 2237–2244. https://doi.org/10.1557/JMR.1998.0313

Ronning, C., Carlson, E. P., Thomson, D. B., & Davis, R. F. (1998). Optical activation of Be implanted into GaN. APPLIED PHYSICS LETTERS, 73(12), 1622–1624. https://doi.org/10.1063/1.122225

Freitas, J. A., Nam, O. H., Zheleva, T. S., & Davis, R. F. (1998). Optical and structural properties of lateral epitaxial overgrown GaN layers. Journal of Crystal Growth, 190(1998 June), 92–96.

Freitas, J. A., Nam, O. H., Davis, R. F., Saparin, G. V., & Obyden, S. K. (1998). Optical characterization of lateral epitaxial overgrown GaN layers. APPLIED PHYSICS LETTERS, 72(23), 2990–2992. https://doi.org/10.1063/1.121517

Roberson, S. L., Finello, D., & Davis, R. F. (1998). Phase control of MoxN films via chemical vapor deposition. THIN SOLID FILMS, 324(1-2), 30–36. https://doi.org/10.1016/S0040-6090(97)01202-9

Nipko, J. C., Loong, C. K., Balkas, C. M., & Davis, R. F. (1998). Phonon density of states of bulk gallium nitride. APPLIED PHYSICS LETTERS, 73(1), 34–36. https://doi.org/10.1063/1.121714

Stutz, C. E., Mack, M., Bremser, M. D., Nam, O. H., Davis, R. F., & Look, D. C. (1998, May). Photoelectrochemical capacitance-voltage measurements in GaN. https://doi.org/10.1007/s11664-998-0182-4

Jahnen, B., Albrecht, M., Dorsch, W., Christiansen, S., Strunk, H. P., Hanser, D., & Davis, R. F. (1998). Pinholes, dislocations and strain relaxation in InGaN. MRS Internet Journal of Nitride Semiconductor Research, 3(39).

Kern, R. S., Tanaka, S., Rowland, L. B., & Davis, R. F. (1998). Reaction kinetics of silicon carbide deposition by gas-source molecular-beam epitaxy. Journal of Crystal Growth, 183(4), 581–593.

Edwards, N. V., Yoo, S. D., Bremser, M. D., Horton, M. N., Perkins, N. R., Weeks, T. W., … Aspnes, D. E. (1998, February). Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films. THIN SOLID FILMS, Vol. 313, pp. 187–192. https://doi.org/10.1016/S0040-6090(97)00815-8

Ronning, C., Banks, A. D., McCarson, B. L., Schlesser, R., Sitar, Z., Davis, R. F., … Nemanich, R. J. (1998). Structural and electronic properties of boron nitride thin films containing silicon. JOURNAL OF APPLIED PHYSICS, 84(9), 5046–5051. https://doi.org/10.1063/1.368752

Yang, P. C., Liu, W., Schlesser, R., Wolden, C. A., Davis, R. F., Prater, J. T., & Sitar, Z. (1998). Surface melting in the heteroepitaxial nucleation of diamond on Ni. JOURNAL OF CRYSTAL GROWTH, 187(1), 81–88. https://doi.org/10.1016/S0022-0248(97)00854-3

Roberson, S. L., Finello, D., & Davis, R. F. (1998). Synthesis of low oxygen concentration molybdenum nitride films. Materials Science & Engineering. A, Structural Materials: Properties, Microstructure and Processing, 248(1-2), 198–205.

Kawaguchi, Y., Shimizu, M., Yamaguchi, M., Hiramatsu, K., Sawaki, N., Taki, W., … Davis, R. F. (1998). The formation of crystalline defects and crystal growth mechanism in InxGa1-xN/GaN heterostructure grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 190(1998 June), 24–28.

Liu, W., Yang, P. C., Wolden, C. A., Davis, R. F., Prater, J. T., & Sitar, Z. (1998). Transmission electron microscopy analysis of the oriented diamond growth on nickel substrates. JOURNAL OF APPLIED PHYSICS, 83(12), 7658–7663. https://doi.org/10.1063/1.367885

Edwards, N. V., Bremser, M. D., Davis, R. F., Batchelor, A. D., Yoo, S. D., Karan, C. F., & Aspnes, D. E. (1998). Trends in residual stress for GaN/AlN/6H-SiC heterostructures. APPLIED PHYSICS LETTERS, 73(19), 2808–2810. https://doi.org/10.1063/1.122597

King, S. W., Ronning, C., Davis, R. F., Busby, R. S., & Nemanich, R. J. (1998). X-ray photoelectron diffraction from (3X3) and (root 3X root 3)R30 degrees (001)(Si) 6H-SiC surfaces. JOURNAL OF APPLIED PHYSICS, 84(11), 6042–6048. https://doi.org/10.1063/1.368879

Yang, P. C., Schlesser, R., Wolden, C. A., Liu, W., Davis, R. F., Sitar, Z., & Prater, J. T. (1997). Control of diamond heteroepitaxy on nickel by optical reflectance. APPLIED PHYSICS LETTERS, 70(22), 2960–2962. https://doi.org/10.1063/1.118756

Kern, R. S., & Davis, R. F. (1997). Deposition and doping of silicon carbide by gas-source molecular beam epitaxy. APPLIED PHYSICS LETTERS, 71(10), 1356–1358. https://doi.org/10.1063/1.119892

Zheleva, T. S., Nam, O. H., Bremser, M. D., & Davis, R. F. (1997). Dislocation density reduction via lateral epitaxy in selectively grown GaN structures. APPLIED PHYSICS LETTERS, 71(17), 2472–2474. https://doi.org/10.1063/1.120091

Davis, R. F., Paisley, M. J., Sitar, Z., Kester, D. J., Ailey, K. S., Linthicum, K., … Kern, R. S. (1997). Gas-source molecular beam epitaxy of III-V nitrides. JOURNAL OF CRYSTAL GROWTH, 178(1-2), 87–101. https://doi.org/10.1016/S0022-0248(97)00077-8

Kern, R. S., Jarrendahl, K., Tanaka, S., & Davis, R. F. (1997, August). Growth and doping via gas-source molecular beam epitaxy of SiC and SiC/AlN heterostructures and their microstructural and electrical characterization. DIAMOND AND RELATED MATERIALS, Vol. 6, pp. 1282–1288. https://doi.org/10.1016/S0925-9635(97)00066-6

Davis, R. F., Weeks, T. W., Bremser, M. D., Tanaka, S., Kern, R. S., Sitar, Z., … Wang, C. (1997, February). Growth of AlN and GaN thin films via OMVPE and gas source MBE and their characterization. SOLID-STATE ELECTRONICS, Vol. 41, pp. 129–134. https://doi.org/10.1016/S0038-1101(96)00152-9

Davis, R. F., Bremser, M. D., Perry, W. G., & Ailey, K. S. (1997). Growth of AlN, GaN and AlxGa1-xN thin films on vicinal and on-axis 6H-SiC(0001) substrates. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, Vol. 17, pp. 1775–1779. https://doi.org/10.1016/S0955-2219(97)00077-0

Nam, O. H., Bremser, M. D., Ward, B. L., Nemanich, R. J., & Davis, R. F. (1997). Growth of GaN and Al0.2Ga0.8N on patterened substrates via organometallic vapor phase epitaxy. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 36(5A), L532–L535. https://doi.org/10.1143/JJAP.36.L532

Bremser, M. D., Perry, W. G., Zheleva, T., Edwards, N. V., Nam, O. H., Parikh, N., … Davis, R. F. (1997, March). Growth, doping and characterization of AlxGa1-xN thin film alloys on 6H-SiC(0001) substrates. DIAMOND AND RELATED MATERIALS, Vol. 6, pp. 196–201. https://doi.org/10.1016/S0925-9635(96)00626-7

Smith, S. A., Wolden, C. A., Bremser, M. D., Hanser, A. D., Davis, R. F., & Lampert, W. V. (1997). High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma. APPLIED PHYSICS LETTERS, 71(25), 3631–3633. https://doi.org/10.1063/1.120463

Kern, R. S., Jarrendahl, K., Tanaka, S., & Davis, R. F. (1997). Homoepitaxial SiC growth by molecular beam epitaxy. Physica Status Solidi. B, Basic Solid State Physics, 202(1), 379–404.

Zavada, J. M., Wilson, R. G., Ren, F., Pearton, S. J., & Davis, R. F. (1997). Hydrogen incorporation and its temperature stability in SiC crystals. SOLID-STATE ELECTRONICS, 41(5), 677–679. https://doi.org/10.1016/S0038-1101(96)00249-3

Wolden, C. A., Davis, R. F., Sitar, Z., & Prater, J. T. (1997). In situ mass spectrometry during diamond chemical vapor deposition using a low pressure flat flame. JOURNAL OF MATERIALS RESEARCH, 12(10), 2733–2742. https://doi.org/10.1557/JMR.1997.0364

Rossow, U., Edwards, N. V., Bremser, M. D., Kern, R. S., Liu, H., Davis, R. F., & Aspnes, D. E. (1997). In-plane optical anisotropies of Al(x)Ga(1-x)N films in their regions of transparency. III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.  (Materials Research Society symposia proceedings ; v. 449), 835–840. https://doi.org/10.1557/proc-449-835

Tanikella, B. V., Gruss, K. A., Davis, R. F., & Scattergood, R. O. (1997). Indentation and microcutting fracture damage in a silicon carbide coating on an incoloy substrate. Surface & Coatings Technology, 88(1-3), 119–126. https://doi.org/10.1016/S0257-8972(96)02910-6

Parikh, N., Suvkhanov, A., Lioubtchenko, M., Carlson, E., Bremser, M., Bray, D., … Hunn, J. (1997, May). Ion implantation of epitaxial GaN films: Damage, doping and activation. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol. 127, pp. 463–466. https://doi.org/10.1016/S0168-583X(97)00076-1

Nam, O.-H., Bremser, M. D., Zheleva, T. S., & Davis, R. F. (1997). Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy. Applied Physics Letters, 71(18), 2698–2640.

Wolden, C. A., Davis, R. F., Sitar, Z., & Prater, J. T. (1997). Low-temperature deposition of optically transparent diamond using a low-pressure flat flame. DIAMOND AND RELATED MATERIALS, 6(12), 1862–1867. https://doi.org/10.1016/S0925-9635(97)00155-6

Smith, L. L., Davis, R. F., Kim, M. J., Carpenter, R. W., & Huang, Y. (1997). Microstructure, electrical properties, and thermal stability of Au-based ohmic contacts to p-GaN. JOURNAL OF MATERIALS RESEARCH, 12(9), 2249–2254. https://doi.org/10.1557/JMR.1997.0300

Kaminska, E., Piotrowska, A., Barcz, A., Ilka, L., Guziewicz, M., Kasjaniuk, S., … Davis, R. F. (1997, October). Ohmic contacts to GaN by solid-phase regrowth. ACTA PHYSICA POLONICA A, Vol. 92, pp. 819–823. https://doi.org/10.12693/APhysPolA.92.819

Shmagin, I. K., Muth, J. F., Lee, J. H., Kolbas, R. M., Balkas, C. M., Sitar, Z., & Davis, R. F. (1997). Optical metastability in bulk GaN single crystals. APPLIED PHYSICS LETTERS, 71(4), 455–457. https://doi.org/10.1063/1.119577

Bergman, L., Bremser, M. D., Perry, W. G., Davis, R. F., Dutta, M., & Nemanich, R. J. (1997). Raman analysis of the configurational disorder in AlxGa1-xN films. APPLIED PHYSICS LETTERS, 71(15), 2157–2159. https://doi.org/10.1063/1.119367

Kern, R. S., & Davis, R. F. (1997). Silicon carbide for high-temperature microelectronics: recent advances in material growth via gas source MBE and device research. Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 46(1-3), 240–247.

Edwards, N. V., Yoo, S. D., Bremser, M. D., Zheleva, T., Horton, M. N., Perkins, N. R., … Aspnes, D. E. (1997). Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 50(1-3), 134–141. https://doi.org/10.1016/s0921-5107(97)00151-7

Balkas, C. M., Sitar, Z., Zheleva, T., Bergman, L., Nemanich, R., & Davis, R. F. (1997). Sublimation growth and characterization of bulk aluminum nitride single crystals. JOURNAL OF CRYSTAL GROWTH, 179(3-4), 363–370. https://doi.org/10.1016/S0022-0248(97)00160-7

Hiramatsu, K., Kawaguchi, Y., Shimizu, M., Sawaki, N., Zheleva, T. S., Davis, R. F., … Oki, K. (1997). The composition pulling effect in MOVPE grown InGaN on GaN and AlGaN and its TEM characterization. MRS Internet Journal of Nitride Semiconductor Research, 2(6).

Sowers, A. T., Christman, J. A., Bremser, M. D., Ward, B. L., Davis, R. F., & Nemanich, R. J. (1997). Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications. Applied Physics Letters, 71(16), 2289–2291. https://doi.org/10.1063/1.120052

Edwards, N. V., Yoo, S. D., Bremser, M. D., Weeks, T. W., Nam, O. H., Davis, R. F., … Aspnes, D. E. (1997). Variation of GaN valence bands with biaxial stress and quantification of residual stress. APPLIED PHYSICS LETTERS, 70(15), 2001–2003. https://doi.org/10.1063/1.119089

Edwards, N. V., Yoo, S. D., Bremser, M. D., Horton, M. N., Perkins, N. R., Weeks, T. W., … Aspnes, D. E. (1997). Variation of GaN valence bands with biaxial stress: quantification of residual stress and impact on fundamental band parameters. III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.  (Materials Research Society symposia proceedings ; v. 449), 781–786. https://doi.org/10.1557/proc-449-781

Balkas, C. M., Sitar, Z., Zheleva, T., Bergman, L., Shmagin, I. K., Muth, J. F., … Davis, R. F. (1996). Growth of bulk AIN and GaN single crystals by sublimation. III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.  (Materials Research Society symposia proceedings ; v. 449), 41–46. Pittsburgh, Pa.: Materials Research Society.

Kisielowski, C., Kruger, J., Ruvimov, S., Suski, T., Ager, J. W., Jones, E., … Davis, R. F. (1996). Strain-related phenomena in GaN thin films. Physical Review. B, Condensed Matter and Materials Physics, 54(24), 17745–17753.

Davis, R. F., & Wang, C. (1995). Germanium doped n-type aluminum nitride epitaxial layers. Washington, DC: U.S. Patent and Trademark Office.

Glass, R. C., Palmour, J. W., Davis, R. F., & Porter, L. S. (1995). Method of forming platinum ohmic contact to p-type silicon carbide. Washington, DC: U.S. Patent and Trademark Office.

Davis, R. F., Carter, C. H., & Hunter, C. E. (1995). Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide. Washington, DC: U.S. Patent and Trademark Office.

Glass, R. C., Palmour, J. W., Davis, R. F., & Porter, L. S. (1994). Platinum ohmic contact to p-type silicon carbide. Washington, DC: U.S. Patent and Trademark Office.

Robert F. Davis. (1993). Diamond films and coatings development, properties, and applications. Park Ridge, NJ: Noyes Pub.

Edmond, J. A., & Davis, R. F. (1992). Implantation and electrical activation of dopants into monocrystalline silicon carbide. Washington, DC: U.S. Patent and Trademark Office.

Kong, H. S., Glass, J. T., & Davis, R. F. (1991). Homoepitaxial growth of Alpha-SiC thin films and semiconductor devices fabricated thereon. Washington, DC: U.S. Patent and Trademark Office.

DAVIS, R. F. (1991). III-V NITRIDES FOR ELECTRONIC AND OPTOELECTRONIC APPLICATIONS. PROCEEDINGS OF THE IEEE, 79(5), 702–712. https://doi.org/10.1109/5.90133

DAVIS, R. F., KELNER, G., SHUR, M., PALMOUR, J. W., & EDMOND, J. A. (1991). THIN-FILM DEPOSITION AND MICROELECTRONIC AND OPTOELECTRONIC DEVICE FABRICATION AND CHARACTERIZATION IN MONOCRYSTALLINE ALPHA AND BETA SILICON-CARBIDE. PROCEEDINGS OF THE IEEE, 79(5), 677–701. https://doi.org/10.1109/5.90132

Davis, R. F., Kong, H. S., Glass, J. T., & Carter, C. H. (1990). Growth of beta-sic thin films and semiconductor devices fabricated thereon. Washington, DC: U.S. Patent and Trademark Office.

Kong, H. S., Glass, J. T., & Davis, R. F. (1990). Homoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon. Washington, DC: U.S. Patent and Trademark Office.

Edmond, J. A., & Davis, R. F. (1990). P-N junction diodes in silicon carbide. Washington, DC: U.S. Patent and Trademark Office.

PAISLEY, M. J., SITAR, Z., POSTHILL, J. B., & DAVIS, R. F. (1989). GROWTH OF CUBIC PHASE GALLIUM NITRIDE BY MODIFIED MOLECULAR-BEAM EPITAXY. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 7(3), 701–705. https://doi.org/10.1116/1.575869

Davis, R. F., Carter, C. H., & Hunter, C. E. (1989). Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide. Washington, DC: U.S. Patent and Trademark Office.