Ronny Kirste

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

APPLIED PHYSICS LETTERS, 118(11).

Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

APPLIED PHYSICS LETTERS, 118(4).

Structural and optical properties of self-assembled AlN nanowires grown on SiO2/Si substrates by molecular beam epitaxy

NANOTECHNOLOGY, 32(19).

Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies

APPLIED PHYSICS LETTERS.

Modulating the Stress Response of E. coli at GaN Interfaces Using Surface Charge, Surface Chemistry, and Genetic Mutations

ACS APPLIED BIO MATERIALS, 3(10), 7211–7218.

The 2020 UV emitter roadmap

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 53(50).

Quasi-phase-matched second harmonic generation of UV light using AlN waveguides

APPLIED PHYSICS LETTERS, 114(10).

Structural characteristics of m-plane AlN substrates and homoepitaxial films

JOURNAL OF CRYSTAL GROWTH, 507, 389–394.

The polarization field in Al-rich AlGaN multiple quantum wells

JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 58.

The role of transient surface morphology on composition control in AlGaN layers and wells

APPLIED PHYSICS LETTERS, 114(3).

A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 124(11).

Bulk and Surface Electronic Properties of Inorganic Materials: Tools to Guide Cellular Behavior

SMALL METHODS, 2(9).

Structure of ultrathin native oxides on III-nitride surfaces

ACS Applied Materials & Interfaces, 10(13), 10607–10611.

The influence of point defects on the thermal conductivity of AlN crystals

Journal of Applied Physics, 123(18).

Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes

JOURNAL OF APPLIED PHYSICS, 124(10).

Thermal conductivity of single-crystalline AIN

Applied Physics Express, 11(7).

Variably doped nanostructured gallium nitride surfaces can serve as biointerfaces for neurotypic PC12 cells and alter their behavior

RSC ADVANCES, 8(64), 36722–36730.

Defect quasi Fermi level control-based C-N reduction in GaN: Evidence for the role of minority carriers

Applied Physics Letters, 111(15).

High free carrier concentration in p-GaN grown on AlN substrates

Applied Physics Letters, 111(3).

Material considerations for the development of III-nitride power devices

Gallium nitride and silicon carbide power technologies 7, 80(7), 29–36.

Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatment

Applied Physics Express, 10(7).

Persistent photoconductivity, nanoscale topography, and chemical functionalization can collectively influence the behavior of PC12 cells on wide bandgap semiconductor surfaces

Small (Weinheim An Der Bergstrasse, Germany), 13(24).

Atomically thin MoS2 narrowband and broadband light superabsorbers

ACS Nano, 10(8), 7493–7499.

HgNO3 sensitivity of AlGaN/GaN field effect transistors functionalized with phytochelating peptides

AIP Advances, 6(6).

Nanoscale topography, semiconductor polarity and surface functionalization: Additive and cooperative effects on PC12 cell behavior

RSC Advances, 6(100), 97873–97881.

Neurotypic cell attachment and growth on III-nitride lateral polarity structures

Materials Science & Engineering. C, Biomimetic Materials, Sensors and Systems, 58, 1194–1198.

Photoluminescence changes of III-Nitride lateral polarity structures after chemical functionalization

Materials Research Express, 3(12).

Polarity control in group-III nitrides beyond pragmatism

Physical Review Applied, 5(5).

Strain engineered high reflectivity DBRs in the deep UV

Gallium nitride materials and devices xi, 9748.

Charge neutrality levels, barrier heights, and band offsets at polar AlGaN

Applied Physics Letters, 107(9).

Electronic biosensors based on III-nitride semiconductors

Annual Review of Analytical Chemistry, Vol 8, 8, 149–169.

Growth and characterization of AlxGa1-xN lateral polarity structures

Physica Status Solidi. A, Applications and Materials Science, 212(5), 1039–1042.

KOH based selective wet chemical etching of AlN, AlxGa1-xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode

Applied Physics Letters, 106(8).

Optical characterization of Al- and N-polar AlN waveguides for integrated optics

Applied Physics Express, 8(4).

Optical properties of aluminum nitride single crystals in the THz region

Optical Materials Express, 5(10), 2106–2111.

Exciton transitions and oxygen as a donor in m-plane AlN homoepitaxial films

Journal of Applied Physics, 115(13).

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

Applied Physics Letters, 105(22).

Homoepitaxial AlN thin films deposited on m-plane (1(1)over-bar00) AlN substrates by metalorganic chemical vapor deposition

Journal of Applied Physics, 116(13).

Properties of AlN based lateral polarity structures

Physica status solidi c: current topics in solid state physics, vol 11, no 2, 11(2), 261–264.

Sapphire decomposition and inversion domains in N-polar aluminum nitride

Applied Physics Letters, 104(3).

Schottky contact formation on polar and non-polar AlN

Journal of Applied Physics, 116(19).

Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

Journal of Applied Physics, 115(10).

Surface preparation of non-polar single-crystalline AlN substrates

Physica status solidi c: current topics in solid state physics, vol 11, no 3-4, 11(3-4), 454–457.

The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

Applied Physics Letters, 104(20).

Compensation effects in GaN: Mg probed by Raman spectroscopy and photoluminescence measurements

Journal of Applied Physics, 113(10).

Effects of strain on the valence band structure and exciton-polariton energies in ZnO

Physical Review. B, Condensed Matter and Materials Physics, 88(23).

Fermi level control of point defects during growth of Mg-doped GaN

Journal of Electronic Materials, 42(5), 815–819.

Ge doped GaN with controllable high carrier concentration for plasmonic applications

Applied Physics Letters, 103(24).

Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures

Applied Physics Letters, 102(17).

Refractive index of III-metal-polar and N-polar AlGaN waveguides grown by metal organic chemical vapor deposition

Applied Physics Letters, 102(22).

Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition

Applied Physics Letters, 102(6).

Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

Applied Physics Letters, 103(16).

On the origin of the 265 nm absorption band in AlN bulk crystals

Applied Physics Letters, 100(19).

Optical signature of Mg-doped GaN: Transfer processes

Physical Review. B, Condensed Matter and Materials Physics, 86(7).

Fabrication and characterization of lateral polar GaN structures for second harmonic generation

Hoffmann, M. P., Gerhold, M., Kirste, R., Rice, A., Akouala, C. R., Xie, J. Q. Q., … Sitar, Z. Quantum sensing and nanophotonic devices x, 8631.

Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes

Guo, W., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., Collazo, R., & Sitar, Z. Journal of Applied Physics, 117(11).

Point defect management in GaN by Fermi-level control during growth

Hoffmann, M. P., Tweedie, J., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., … Collazo, R. Gallium nitride materials and devices ix, 8986.