Works (80)

Updated: April 5th, 2024 07:22

2023 journal article

Anderson transition in compositionally graded p-AlGaN

JOURNAL OF APPLIED PHYSICS, 134(19).

By: S. Rathkanthiwar n, P. Reddy*, C. Quinones n, J. Loveless n, M. Kamiyama n, P. Bagheri n, D. Khachariya*, T. Eldred n ...

UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: November 16, 2023

2023 journal article

Demonstration of near-ideal Schottky contacts to Si-doped AlN

APPLIED PHYSICS LETTERS, 123(17).

By: C. Quinones n, D. Khachariya*, P. Bagheri n, P. Reddy*, S. Mita*, R. Kirste*, S. Rathkanthiwar n, J. Tweedie* ...

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: October 25, 2023

2023 journal article

High conductivity in Ge-doped AlN achieved by a non-equilibrium process

APPLIED PHYSICS LETTERS, 122(14).

By: P. Bagheri n, C. Quinones-Garcia n, D. Khachariya*, J. Loveless n, Y. Guan n, S. Rathkanthiwar n, P. Reddy*, R. Kirste* ...

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: April 6, 2023

2023 journal article

High p-conductivity in AlGaN enabled by polarization field engineering

APPLIED PHYSICS LETTERS, 122(15).

By: S. Rathkanthiwar n, P. Reddy*, B. Moody*, C. Quinones-Garcia n, P. Bagheri n, D. Khachariya*, R. Dalmau*, S. Mita* ...

Sources: Web Of Science, ORCID, NC State University Libraries
Added: April 19, 2023

2022 journal article

<p>The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN</p>

APPLIED PHYSICS LETTERS, 120(3).

By: K. Wang n, R. Kirste n, S. Mita n, S. Washiyama n, W. Mecouch n, P. Reddy n, R. Collazo n, Z. Sitar n

UN Sustainable Development Goal Categories
14. Life Below Water (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: May 2, 2022

2022 article

Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates

Rathkanthiwar, S., Graziano, M. B., Tweedie, J., Mita, S., Kirste, R., Collazo, R., & Sitar, Z. (2022, October 25). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 10.

By: S. Rathkanthiwar n, M. Graziano n, J. Tweedie*, S. Mita*, R. Kirste*, R. Collazo n, Z. Sitar n

author keywords: AlGaN; AlN substrates; strain relaxation; tilt
Sources: Web Of Science, NC State University Libraries
Added: October 31, 2022

2022 journal article

Doping and compensation in heavily Mg doped Al-rich AlGaN films

APPLIED PHYSICS LETTERS, 120(8).

By: P. Bagheri n, A. Klump n, S. Washiyama n, M. Breckenridge n, J. Kim n, Y. Guan n, D. Khachariya n, C. Quinones-Garcia n ...

Sources: Web Of Science, NC State University Libraries
Added: June 20, 2022

2022 journal article

GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions

JOURNAL OF APPLIED PHYSICS, 131(1).

By: D. Szymanski n, D. Khachariya n, T. Eldred n, P. Bagheri n, S. Washiyama n, A. Chang*, S. Pavlidis n, R. Kirste* ...

Sources: Web Of Science, ORCID, NC State University Libraries
Added: January 4, 2022

2022 journal article

High electron mobility in AlN:Si by point and extended defect management

JOURNAL OF APPLIED PHYSICS, 132(18).

Sources: Web Of Science, ORCID, NC State University Libraries
Added: November 10, 2022

2022 article

Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3.

By: P. Reddy*, W. Mecouch*, M. Breckenridge n, D. Khachariya n, P. Bagheri n, J. Kim n, Y. Guan n, S. Mita* ...

author keywords: AlGaN; APD; UVC
Sources: Web Of Science, ORCID, NC State University Libraries
Added: March 11, 2022

2022 journal article

Low resistivity, p-type, N-Polar GaN achieved by chemical potential control

APPLIED PHYSICS EXPRESS, 15(8).

By: S. Rathkanthiwar n, D. Szymanski n, D. Khachariya n, P. Bagheri n, J. Kim n, S. Mita*, P. Reddy*, E. Kohn n ...

author keywords: N-polar GaN; p doping; compensation; chemical potential control
Sources: Web Of Science, NC State University Libraries
Added: August 8, 2022

2022 journal article

On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).

By: A. Jadhav*, P. Bagheri n, A. Klump n, D. Khachariya n, S. Mita*, P. Reddy*, S. Rathkanthiwar n, R. Kirste* ...

author keywords: III-nitride; Mg-doped AlGaN; ionization energy; mobility; contact resistance
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: November 6, 2021

2022 journal article

Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices

APPLIED PHYSICS EXPRESS, 15(5).

Sources: Web Of Science, NC State University Libraries
Added: April 25, 2022

2022 journal article

Pseudomorphic growth of thick Al0.6Ga0.4N epilayers on AlN substrates

APPLIED PHYSICS LETTERS, 120(20).

By: S. Rathkanthiwar n, J. Dycus*, S. Mita*, R. Kirste*, J. Tweedie*, R. Collazo n, Z. Sitar n

Sources: Web Of Science, NC State University Libraries
Added: May 31, 2022

2022 journal article

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS, 120(17).

By: D. Khachariya n, S. Mita*, P. Reddy*, S. Dangi n, J. Dycus*, P. Bagheri n, M. Breckenridge n, R. Sengupta n ...

Sources: Web Of Science, NC State University Libraries
Added: May 31, 2022

2022 article

Spintronic Terahertz Emission in Ultrawide Bandgap Semiconductor/Ferromagnet Heterostructures

Comstock, A., Biliroglu, M., Seyitliyev, D., McConnell, A., Vetter, E., Reddy, P., … Sun, D. (2022, October 31). ADVANCED OPTICAL MATERIALS, Vol. 10.

By: A. Comstock n, M. Biliroglu n, D. Seyitliyev n, A. McConnell n, E. Vetter n, P. Reddy*, R. Kirste*, D. Szymanski* ...

author keywords: spintronics; terahertz; two-dimensional electron gas; ultrawide bandgap semiconductors
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: November 14, 2022

2022 journal article

Systematic oxygen impurity reduction in smooth N-polar GaN by chemical potential control

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).

By: D. Szymanski*, K. Wang, F. Kaess*, R. Kirste*, S. Mita*, P. Reddy*, Z. Sitar*, R. Collazo*

author keywords: oxygen; impurity; semiconductor; nitride; chemical potential; defect
Sources: Web Of Science, NC State University Libraries
Added: June 19, 2023

2022 article

Tracking of Point Defects in the Full Compositional Range of AlGaN via Photoluminescence Spectroscopy

Hyun Kim, J., Bagheri, P., Kirste, R., Reddy, P., Collazo, R., & Sitar, Z. (2022, December 9). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 12.

By: J. Hyun Kim n, P. Bagheri n, R. Kirste*, P. Reddy*, R. Collazo n & Z. Sitar n

author keywords: AlGaN; AlN; defects; GaN; photoluminescence
Sources: Web Of Science, ORCID, NC State University Libraries
Added: December 10, 2022

2022 journal article

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

APPLIED PHYSICS EXPRESS, 15(10).

By: D. Khachariya*, S. Stein n, W. Mecouch*, M. Breckenridge n, S. Rathkanthiwar n, S. Mita*, B. Moody*, P. Reddy* ...

author keywords: GaN; junction barrier Schottky diode; low ON-resistance; high breakdown voltage; Mg ion implantation; ultra-high-pressure anneal
Sources: Web Of Science, NC State University Libraries
Added: October 3, 2022

2021 journal article

A pathway to highly conducting Ge-doped AlGaN

JOURNAL OF APPLIED PHYSICS, 130(20).

By: P. Bagheri n, J. Kim n, S. Washiyama n, P. Reddy*, A. Klump n, R. Kirste*, S. Mita*, R. Collazo n, Z. Sitar n

Sources: Web Of Science, ORCID, NC State University Libraries
Added: November 23, 2021

2021 journal article

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

APPLIED PHYSICS LETTERS, 118(11).

By: M. Breckenridge n, P. Bagheri n, Q. Guo n, B. Sarkar n, D. Khachariya n, S. Pavlidis n, J. Tweedie*, R. Kirste* ...

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: March 17, 2021

2021 journal article

On the Ge shallow-to-deep level transition in Al-rich AlGaN

JOURNAL OF APPLIED PHYSICS, 130(5).

By: P. Bagheri n, P. Reddy n, S. Mita n, D. Szymanski n, J. Kim n, Y. Guan n, D. Khachariya n, A. Klump n ...

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 4, 2021

2021 journal article

Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

APPLIED PHYSICS LETTERS, 118(4).

By: S. Washiyama n, K. Mirrielees n, P. Bagheri n, J. Baker n, J. Kim n, Q. Guo n, R. Kirste*, Y. Guan n ...

Sources: Web Of Science, NC State University Libraries
Added: March 29, 2021

2021 article

Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength

Kirste, R., Sarkar, B., Reddy, P., Guo, Q., Collazo, R., & Sitar, Z. (2021, December 15). JOURNAL OF MATERIALS RESEARCH, Vol. 12.

By: R. Kirste n, B. Sarkar n, P. Reddy n, Q. Guo n, R. Collazo n & Z. Sitar n

author keywords: Laser; Optoelectronic; Electrical properties; Optical properties; Dopant
Sources: Web Of Science, NC State University Libraries
Added: January 3, 2022

2021 journal article

Structural and optical properties of self-assembled AlN nanowires grown on SiO2/Si substrates by molecular beam epitaxy

NANOTECHNOLOGY, 32(19).

By: Z. Gacevic, J. Grandal, Q. Guo*, R. Kirste*, M. Varela, Z. Sitar*, M. Sanchez Garcia

author keywords: AlN nanowires; self-assembled; molecular beam epitaxy; structural and optical properties
TL;DR: It is shown that the self-assembled AlN nanowires grown by plasma-assisted molecular beam epitaxy (PAMBE) on SiO2/Si (111) substrates grow nearly strain-free, preferentially perpendicular to the amorphous SiO 2 interlayer and without epitaxial relationship to Si(111) substrate, as expected. (via Semantic Scholar)
Source: Web Of Science
Added: March 15, 2021

2021 journal article

Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN

APPLIED PHYSICS LETTERS, 119(18).

By: P. Reddy*, D. Khachariya n, W. Mecouch*, M. Breckenridge n, P. Bagheri n, Y. Guan n, J. Kim n, S. Pavlidis n ...

Sources: Web Of Science, ORCID, NC State University Libraries
Added: November 3, 2021

2021 journal article

Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies

APPLIED PHYSICS LETTERS, 119(2).

By: J. Kim n, P. Bagheri n, S. Washiyama n, A. Klump n, R. Kirste*, S. Mita*, P. Reddy*, R. Collazo n, Z. Sitar n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: July 26, 2021

2020 journal article

Modulating the Stress Response of E. coli at GaN Interfaces Using Surface Charge, Surface Chemistry, and Genetic Mutations

ACS APPLIED BIO MATERIALS, 3(10), 7211–7218.

By: S. Gleco n, P. Reddy*, R. Kirste*, R. Collazo n, D. LaJeunesse* & A. Ivanisevic n

author keywords: gallium nitride; E. coli; UV light; surface charge; reactive oxygen species; calcium
TL;DR: The persistent photoconductivity properties of chemically treated gallium nitride substrates were used to evaluate the stress response of wild-type, ΔfliC, and ΔcsgG mutant E. coli exposed to charged surfaces to determine generational effects of the initial exposure on the physiology of the bacteria. (via Semantic Scholar)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: September 30, 2020

2020 journal article

The 2020 UV emitter roadmap

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 53(50).

By: H. Amano*, R. Collazo n, C. Santi*, S. Einfeldt*, M. Funato*, J. Glaab*, S. Hagedorn*, A. Hirano ...

author keywords: ultraviolet; light emitting diodes; InGaN; UV-LED; AlGaN
Sources: Web Of Science, NC State University Libraries
Added: October 19, 2020

2019 journal article

Quasi-phase-matched second harmonic generation of UV light using AlN waveguides

APPLIED PHYSICS LETTERS, 114(10).

By: D. Alden n, T. Troha n, R. Kirste n, S. Mita n, Q. Guo n, A. Hoffmann n, M. Zgonik n, R. Collazo n, Z. Sitar n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: April 2, 2019

2019 journal article

Structural characteristics of m-plane AlN substrates and homoepitaxial films

JOURNAL OF CRYSTAL GROWTH, 507, 389–394.

By: M. Graziano n, I. Bryan n, Z. Bryan n, R. Kirste n, J. Tweedie n, R. Collazo n, Z. Sitar n

author keywords: Characterization; High resolution x-ray diffraction; Surface structure; Crystal structure; Metalorganic chemical vapor deposition; Nitrides
Sources: Web Of Science, NC State University Libraries
Added: January 28, 2019

2019 article

The polarization field in Al-rich AlGaN multiple quantum wells

Guo, Q., Kirste, R., Mita, S., Tweedie, J., Reddy, P., Washiyama, S., … Sitar, Z. (2019, June 1). JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 58.

Sources: Web Of Science, NC State University Libraries
Added: July 29, 2019

2019 journal article

The role of transient surface morphology on composition control in AlGaN layers and wells

APPLIED PHYSICS LETTERS, 114(3).

By: J. Dycus n, S. Washiyama n, T. Eldred n, Y. Guan n, R. Kirste*, S. Mita*, Z. Sitar n, R. Collazo n, J. LeBeau n

Sources: Web Of Science, NC State University Libraries
Added: February 11, 2019

2018 journal article

A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 124(11).

By: S. Washiyama n, P. Reddy*, F. Kaess n, R. Kirste*, S. Mita*, R. Collazo n, Z. Sitar n

Sources: Web Of Science, ORCID, NC State University Libraries
Added: October 16, 2018

2018 review

Bulk and Surface Electronic Properties of Inorganic Materials: Tools to Guide Cellular Behavior

[Review of ]. SMALL METHODS, 2(9).

By: P. Snyder n, P. Reddy*, R. Kirste*, R. Collazo n & A. Ivanisevic n

author keywords: (photo)conductivity; charge; neural cells; piezoelectricity; polarity; semiconductors
Sources: Web Of Science, NC State University Libraries
Added: October 16, 2018

2018 journal article

Structure of Ultrathin Native Oxides on III-Nitride Surfaces

ACS APPLIED MATERIALS & INTERFACES, 10(13), 10607–10611.

By: J. Dycus n, K. Mirrielees n, E. Grimley n, R. Kirste n, S. Mita n, Z. Sitar n, R. Collazo n, D. Irving n, J. LeBeau n

author keywords: ultrathin oxides; surface reconstructions; group III nitrides; scanning transmission electron microscopy; density functional theory
TL;DR: In this study, aberration corrected scanning transmission electron microscopy reveals directly, and with depth dependence, the structure of ultrathin native oxides that form on AlN and GaN surfaces, and shows that the oxide layers are comprised of tetrahedra-octahedra cation-oxygen units, in an arrangement similar to bulk θ-Al2O3 and β-Ga2 O3. (via Semantic Scholar)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2018 journal article

The influence of point defects on the thermal conductivity of AlN crystals

JOURNAL OF APPLIED PHYSICS, 123(18).

By: R. Rounds n, B. Sarkar n, D. Alden n, Q. Guo n, A. Klump n, C. Hartmann*, T. Nagashima*, R. Kirste n ...

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2018 journal article

Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes

JOURNAL OF APPLIED PHYSICS, 124(10).

Sources: Web Of Science, NC State University Libraries
Added: October 16, 2018

2018 journal article

Thermal conductivity of single-crystalline AIN

APPLIED PHYSICS EXPRESS, 11(7).

By: R. Rounds n, B. Sarkar n, A. Klump n, C. Hartmann*, T. Nagashima*, R. Kirste n, A. Franke n, M. Bickermann* ...

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2018 journal article

Variably doped nanostructured gallium nitride surfaces can serve as biointerfaces for neurotypic PC12 cells and alter their behavior

RSC ADVANCES, 8(64), 36722–36730.

By: P. Snyder n, P. Reddy*, R. Kirste*, D. LaJeunesse*, R. Collazo n & A. Ivanisevic n

TL;DR: It is shown that persistent photoconductivity (PPC) can be used to alter the surface properties prior to chemicalfunctionalization, the concentration of dopants can have some effect on cellular behavior, and that chemical functionalization changes the surface potential before and after exposure to UV light. (via Semantic Scholar)
Sources: Web Of Science, NC State University Libraries
Added: November 26, 2018

2017 article

(Invited) Material Considerations for the Development of III-nitride Power Devices

GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 7, Vol. 80, pp. 29–36.

By: B. Sarkar n, P. Reddy n, F. Kaess n, B. Haidet n, J. Tweedie*, S. Mita*, R. Kirste*, E. Kohn n ...

Contributors: B. Sarkar n, P. Reddy n, F. Kaess n, B. Haidet n, J. Tweedie*, S. Mita*, R. Kirste*, E. Kohn n, R. Collazo n, Z. Sitar n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018

2017 journal article

Defect quasi Fermi level control-based C-N reduction in GaN: Evidence for the role of minority carriers

APPLIED PHYSICS LETTERS, 111(15).

By: P. Reddy n, F. Kaess n, J. Tweedie*, R. Kirste*, S. Mita*, R. Collazo n, Z. Sitar n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018

2017 journal article

High free carrier concentration in p-GaN grown on AlN substrates

APPLIED PHYSICS LETTERS, 111(3).

By: B. Sarkar n, S. Mita n, P. Reddy n, A. Klump n, F. Kaess n, J. Tweedie n, I. Bryan n, Z. Bryan n ...

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018

2017 journal article

Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatment

APPLIED PHYSICS EXPRESS, 10(7).

By: B. Sarkar n, B. Haidet n, P. Reddy n, R. Kirste n, R. Collazo n & Z. Sitar n

Contributors: B. Sarkar n, B. Haidet n, P. Reddy n, R. Kirste n, R. Collazo n & Z. Sitar n

UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018

2017 journal article

Persistent Photoconductivity, Nanoscale Topography, and Chemical Functionalization Can Collectively Influence the Behavior of PC12 Cells on Wide Bandgap Semiconductor Surfaces

SMALL, 13(24).

By: P. Snyder n, R. Kirste n, R. Collazo n & A. Ivanisevic n

TL;DR: Templates with lithographically defined regions with controlled roughness are generated during the semiconductor growth process and surface chemistry and initial conductivity difference are used to facilitate the extension to smoother areas on the GaN surface. (via Semantic Scholar)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2016 journal article

Atomically Thin MoS2 Narrowband and Broadband Light Superabsorbers

ACS NANO, 10(8), 7493–7499.

By: L. Huang n, G. Li n, A. Gurarslan n, Y. Yu n, R. Kirste n, W. Guo n, J. Zhao n, R. Collazo n ...

Contributors: L. Huang n, G. Li n, A. Gurarslan n, Y. Yu n, R. Kirste n, W. Guo n, J. Zhao n, R. Collazo n ...

author keywords: MoS2; two-dimensional materials; light absorption; leaky mode; resonant photonics
TL;DR: A combined theoretical and experimental effort to enable strong light absorption in atomically thin MoS2 films by integrating the films with resonant photonic structures that are deterministically designed using a unique reverse design approach based on leaky mode coupling. (via Semantic Scholar)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries, ORCID
Added: August 6, 2018

2016 journal article

HgNO3 sensitivity of AlGaN/GaN field effect transistors functionalized with phytochelating peptides

AIP ADVANCES, 6(6).

By: N. Rohrbaugh n, L. Hernandez-Balderrama n, F. Kaess n, R. Kirste n, R. Collazo n & A. Ivanisevic n

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2016 journal article

Nanoscale topography, semiconductor polarity and surface functionalization: additive and cooperative effects on PC12 cell behavior

RSC ADVANCES, 6(100), 97873–97881.

By: P. Snyder n, R. Kirste n, R. Collazoa & A. Ivanisevic n

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2016 journal article

Neurotypic cell attachment and growth on III-nitride lateral polarity structures

MATERIALS SCIENCE & ENGINEERING C-MATERIALS FOR BIOLOGICAL APPLICATIONS, 58, 1194–1198.

author keywords: Gallium nitride; Cell adhesion; Neurons; Semiconductor; Polarity
MeSH headings : Aluminum Compounds / chemistry; Aluminum Compounds / pharmacology; Animals; Cell Adhesion / drug effects; Cell Differentiation / drug effects; Gallium / chemistry; Gallium / pharmacology; Neurons / cytology; Neurons / drug effects; PC12 Cells; Rats; Semiconductors
TL;DR: The designed material configuration is further explored for biochemical sensing, and the lateral polarity scheme may provide a route in assessing the non-specific protein adsorption to this varying nano-topography that drives the subsequent cell response. (via Semantic Scholar)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2016 journal article

Photoluminescence changes of III-Nitride lateral polarity structures after chemical functionalization

MATERIALS RESEARCH EXPRESS, 3(12).

By: N. Berg n, A. Franke n, R. Kirste n, R. Collazo n & A. Ivanisevic n

author keywords: gallium nitride; biomolecule; photoluminescence
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2016 journal article

Polarity Control in Group-III Nitrides beyond Pragmatism

PHYSICAL REVIEW APPLIED, 5(5).

By: S. Mohn*, N. Stolyarchuk*, T. Markurt*, R. Kirste n, M. Hoffmann n, R. Collazo n, A. Courville*, R. Di Felice* ...

TL;DR: The authors use transmission electron microscopy and density-functional theory to see how exchange of aluminum, oxygen, and nitrogen within a sapphire substrate mediates the polarity of an epitaxial film of group-III nitride. (via Semantic Scholar)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2016 article

Strain engineered high reflectivity DBRs in the deep UV

GALLIUM NITRIDE MATERIALS AND DEVICES XI, Vol. 9748.

By: A. Franke n, P. Hoffmann n, L. Hernandez-Balderrama n, F. Kaess n, I. Bryan n, S. Washiyama n, M. Bobea n, J. Tweedie n ...

author keywords: Distributed Bragg Reflector (DBR); strain relaxation; MOCVD; AlGaN; Nitride
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2015 journal article

Charge neutrality levels, barrier heights, and band offsets at polar AlGaN

APPLIED PHYSICS LETTERS, 107(9).

By: P. Reddy n, I. Bryan n, Z. Bryan n, J. Tweedie, S. Washiyama n, R. Kirste n, S. Mita*, R. Collazo n, Z. Sitar n

Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018

2015 article

Electronic Biosensors Based on III-Nitride Semiconductors

ANNUAL REVIEW OF ANALYTICAL CHEMISTRY, VOL 8, Vol. 8, pp. 149–169.

By: R. Kirste n, N. Rohrbaugh n, I. Bryan n, Z. Bryan n, R. Collazo n & A. Ivanisevic n

author keywords: semiconductors; surfaces; biosensors; nitrides; field-effect transistors
MeSH headings : Aluminum Compounds / chemistry; Biosensing Techniques; Electronics; Gallium / chemistry; Humans; Semiconductors
TL;DR: GaN/GaN high-electron-mobility transistor (HEMT) biosensors demonstrated in the literature, including those detecting DNA, bacteria, cancer antibodies, and toxins, and the high potential for monitoring living cardiac, fibroblast, and nerve cells is discussed. (via Semantic Scholar)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2015 article

Growth and characterization of AlxGa1-xN lateral polarity structures

Hoffmann, M. P., Kirste, R., Mita, S., Guo, W., Tweedie, J., Bobea, M., … Sitar, Z. (2015, May). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, pp. 1039–1042.

By: M. Hoffmann n, R. Kirste n, S. Mita*, W. Guo n, J. Tweedie n, M. Bobea n, I. Bryan n, Z. Bryan n ...

author keywords: AlGaN; growth; lateral polarity structures; optical phase matching
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2015 journal article

KOH based selective wet chemical etching of AlN, AlxGa1-xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode

APPLIED PHYSICS LETTERS, 106(8).

By: W. Guo n, R. Kirste n, I. Bryan n, Z. Bryan n, L. Hussey n, P. Reddy n, J. Tweedie, R. Collazo n, Z. Sitar n

Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018

2015 journal article

Optical characterization of Al- and N-polar AlN waveguides for integrated optics

APPLIED PHYSICS EXPRESS, 8(4).

By: M. Rigler*, J. Buh*, M. Hoffmann n, R. Kirste n, M. Bobea n, S. Mita*, M. Gerhold, R. Collazo n, Z. Sitar n, M. Zgonik*

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2015 journal article

Optical properties of aluminum nitride single crystals in the THz region

OPTICAL MATERIALS EXPRESS, 5(10), 2106–2111.

By: A. Majkic*, U. Puc*, A. Franke n, R. Kirste n, R. Collazo n, Z. Sitar n, M. Zgonik*

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2014 journal article

Exciton transitions and oxygen as a donor in m-plane AlN homoepitaxial films

JOURNAL OF APPLIED PHYSICS, 115(13).

By: Z. Bryan n, I. Bryan n, M. Bobea n, L. Hussey n, R. Kirste n, Z. Sitar n, R. Collazo n

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2014 journal article

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

APPLIED PHYSICS LETTERS, 105(22).

By: Z. Bryan n, I. Bryan n, B. Gaddy n, P. Reddy n, L. Hussey n, M. Bobea n, W. Guo n, M. Hoffmann n ...

Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018

2014 journal article

Homoepitaxial AlN thin films deposited on m-plane (1(1)over-bar00) AlN substrates by metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 116(13).

By: I. Bryan n, Z. Bryan n, M. Bobea n, L. Hussey n, R. Kirste n, R. Collazo n, Z. Sitar n

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2014 article

Properties of AlN based lateral polarity structures

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 2, Vol. 11, pp. 261–264.

By: R. Kirste n, S. Mita*, M. Hoffmann n, L. Hussey n, W. Guo n, I. Bryan n, Z. Bryan n, J. Tweedie n ...

author keywords: lateral polarity structures; quasi-phase matching; N-polar; columnar growth
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2014 journal article

Sapphire decomposition and inversion domains in N-polar aluminum nitride

APPLIED PHYSICS LETTERS, 104(3).

By: L. Hussey n, R. White n, R. Kirste n, S. Mita*, I. Bryan n, W. Guo n, K. Osterman n, B. Haidet n ...

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2014 journal article

Schottky contact formation on polar and non-polar AlN

JOURNAL OF APPLIED PHYSICS, 116(19).

By: P. Reddy n, I. Bryan n, Z. Bryan n, J. Tweedie n, R. Kirste n, R. Collazo n, Z. Sitar n

Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018

2014 journal article

Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

JOURNAL OF APPLIED PHYSICS, 115(10).

By: W. Guo n, Z. Bryan n, J. Xie*, R. Kirste n, S. Mita*, I. Bryan n, L. Hussey n, M. Bobea n ...

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2014 article

Surface preparation of non-polar single-crystalline AlN substrates

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, Vol. 11, pp. 454–457.

By: I. Bryan n, C. Akouala n, J. Tweedie n, Z. Bryan n, A. Rice n, R. Kirste n, R. Collazo n, Z. Sitar n

author keywords: aluminum nitride; aluminum hydroxides; X-ray photoelectron spectroscopy; surface preparation
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2014 journal article

The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

APPLIED PHYSICS LETTERS, 104(20).

By: B. Gaddy n, Z. Bryan n, I. Bryan n, J. Xie*, R. Dalmau*, B. Moody*, Y. Kumagai*, T. Nagashima* ...

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2013 journal article

Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements

Journal of Applied Physics, 113(10), 103504.

By: R. Kirste n, M. Hoffmann n, J. Tweedie n, Z. Bryan n, G. Callsen*, T. Kure*, C. Nenstiel*, M. Wagner* ...

Sources: Web Of Science, NC State University Libraries, Crossref
Added: August 6, 2018

2013 journal article

Effects of strain on the valence band structure and exciton-polariton energies in ZnO

PHYSICAL REVIEW B, 88(23).

Source: Web Of Science
Added: August 6, 2018

2013 journal article

Fermi Level Control of Point Defects During Growth of Mg-Doped GaN

JOURNAL OF ELECTRONIC MATERIALS, 42(5), 815–819.

By: Z. Bryan n, M. Hoffmann n, J. Tweedie n, R. Kirste n, G. Callsen*, I. Bryan n, A. Rice n, M. Bobea n ...

author keywords: Mg; GaN; UV excitation; Photoluminescence; Metal-organic chemical vapordeposition (MOCVD)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2013 journal article

Ge doped GaN with controllable high carrier concentration for plasmonic applications

Applied Physics Letters, 103(24), 242107.

By: R. Kirste n, M. Hoffmann n, E. Sachet n, M. Bobea n, Z. Bryan n, I. Bryan n, C. Nenstiel*, A. Hoffmann* ...

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: NC State University Libraries, Crossref, NC State University Libraries
Added: August 6, 2018

2013 journal article

Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures

APPLIED PHYSICS LETTERS, 102(17).

By: J. Xie n, S. Mita n, Z. Bryan n, W. Guo n, L. Hussey n, B. Moody n, R. Schlesser n, R. Kirste n ...

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2013 journal article

Refractive index of III-metal-polar and N-polar AlGaN waveguides grown by metal organic chemical vapor deposition

APPLIED PHYSICS LETTERS, 102(22).

By: M. Rigler n, M. Zgonik n, M. Hoffmann n, R. Kirste n, M. Bobea n, R. Collazo n, Z. Sitar n, S. Mita n, M. Gerhold n

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2013 journal article

Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition

APPLIED PHYSICS LETTERS, 102(6).

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2013 journal article

Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

APPLIED PHYSICS LETTERS, 103(16).

By: B. Gaddy n, Z. Bryan n, I. Bryan n, R. Kirste n, J. Xie*, R. Dalmau*, B. Moody*, Y. Kumagai* ...

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2012 journal article

On the origin of the 265 nm absorption band in AlN bulk crystals

APPLIED PHYSICS LETTERS, 100(19).

By: R. Collazo n, J. Xie*, B. Gaddy n, Z. Bryan n, R. Kirste n, M. Hoffmann n, R. Dalmau*, B. Moody* ...

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2012 journal article

Optical signature of Mg-doped GaN: Transfer processes

PHYSICAL REVIEW B, 86(7).

By: G. Callsen*, M. Wagner*, T. Kure*, J. Reparaz*, M. Buegler, J. Brunnmeier*, C. Nenstiel*, A. Hoffmann* ...

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

conference paper

Fabrication and characterization of lateral polar GaN structures for second harmonic generation

Hoffmann, M. P., Gerhold, M., Kirste, R., Rice, A., Akouala, C. R., Xie, J. Q. Q., … Sitar, Z. Quantum sensing and nanophotonic devices x, 8631.

Source: NC State University Libraries
Added: August 6, 2018

journal article

Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes

Guo, W., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., Collazo, R., & Sitar, Z. Journal of Applied Physics, 117(11).

By: W. Guo, R. Kirste, Z. Bryan, I. Bryan, M. Gerhold, R. Collazo, Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

conference paper

Point defect management in GaN by Fermi-level control during growth

Hoffmann, M. P., Tweedie, J., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., … Collazo, R. Gallium nitride materials and devices ix, 8986.

By: M. Hoffmann, J. Tweedie, R. Kirste, Z. Bryan, I. Bryan, M. Gerhold, Z. Sitar, R. Collazo

Source: NC State University Libraries
Added: August 6, 2018

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