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Works (87)
2026 article
Elimination of wing tilt laterally overgrown GaN
Almeter, J., Mita, S., Dycus, J. H., Collazo, R., Sitar, Z., & Kirste, R. (2026, January 5). Applied Physics Letters.
2025 article
AlGaN based UVC LEDs on AlN with reflective contacts
Kirste, R., Loveless, J., Almeter, J., Moody, B., Reddy, P., Rathkanthiwar, S., … Sitar, Z. (2025, March 19). (Vol. 3). Vol. 3.
2025 article
Experimental Characterization of Impact Ionization and Projection of Critical Electric Fields in High‐Al Content AlGaN
Zhu, Z., Reddy, P., Satapathy, Y., Cao, L., Xiong, J., Gutierrez, M., … Fay, P. (2025, June 24). Physica Status Solidi (a), Vol. 6.
open access via onlinelibrary.wiley.com (publisher PDF)2025 article
Nitride Semiconductors – IWN 2024
Sarkar, B., Callsen, G., & Kirste, R. (2025, December 1). Physica Status Solidi (a).
2025 article
Nitride Semiconductors – IWN 2024
Sarkar, B., Callsen, G., & Kirste, R. (2025, December 1). Physica Status Solidi (b).
2025 article
Pathway to >60% Efficiency in AlGaN‐Based Ultraviolet‐C Light‐Emitting Diodes
Loveless, J., Almeter, J., Kirste, R., Moody, B., Reddy, P., Rathkanthiwar, S., … Sitar, Z. (2025, October 28). Physica Status Solidi (a).
2024 article
High-current, high-voltage AlN Schottky barrier diodes
Quiñones, C. E., Khachariya, D., Reddy, P., Mita, S., Almeter, J., Bagheri, P., … Sitar, Z. (2024, September 30). Applied Physics Express, Vol. 17.
2023 article
Anderson transition in compositionally graded p-AlGaN
Rathkanthiwar, S., Reddy, P., Quiñones, C. E., Loveless, J., Kamiyama, M., Bagheri, P., … Sitar, Z. (2023, November 15). Journal of Applied Physics, Vol. 134.
Contributors: S. Rathkanthiwar n, P. Reddy* , C. Quiñones n , J. Loveless n, M. Kamiyama n , P. Bagheri n, D. Khachariya*, T. Eldred n
2023 article
Demonstration of near-ideal Schottky contacts to Si-doped AlN
Quiñones, C. E., Khachariya, D., Bagheri, P., Reddy, P., Mita, S., Kirste, R., … Sitar, Z. (2023, October 23). Applied Physics Letters, Vol. 123.
Contributors: C. Quiñones n , D. Khachariya*, P. Bagheri n, P. Reddy* , S. Mita*, *, S. Rathkanthiwar n, J. Tweedie*
2023 article
High conductivity in Ge-doped AlN achieved by a non-equilibrium process
Bagheri, P., Quiñones-Garcia, C., Khachariya, D., Loveless, J., Guan, Y., Rathkanthiwar, S., … Sitar, Z. (2023, April 3). Applied Physics Letters, Vol. 122.
Contributors: P. Bagheri n, C. Quiñones-Garcia n , D. Khachariya*, J. Loveless n, Y. Guan n, S. Rathkanthiwar n, P. Reddy* , *
2023 article
High p-conductivity in AlGaN enabled by polarization field engineering
Rathkanthiwar, S., Reddy, P., Moody, B., Quiñones-García, C., Bagheri, P., Khachariya, D., … Sitar, Z. (2023, April 10). Applied Physics Letters, Vol. 122.
Contributors: S. Rathkanthiwar n, P. Reddy* , B. Moody*, C. Quiñones-García n , P. Bagheri n, D. Khachariya*, R. Dalmau *, S. Mita*
2022 article
Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates
Rathkanthiwar, S., Graziano, M. B., Tweedie, J., Mita, S., Kirste, R., Collazo, R., & Sitar, Z. (2022, October 14). Physica Status Solidi (RRL) - Rapid Research Letters, Vol. 10.
2022 article
Doping and compensation in heavily Mg doped Al-rich AlGaN films
Bagheri, P., Klump, A., Washiyama, S., Breckenridge, M. H., Kim, J. H., Guan, Y., … Sitar, Z. (2022, February 21). Applied Physics Letters, Vol. 2.
Contributors: P. Bagheri n, A. Klump n, S. Washiyama n, M. Breckenridge n, J. Kim n, Y. Guan n, D. Khachariya n, C. Quiñones-García n
2022 article
GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions
Szymanski, D., Khachariya, D., Eldred, T. B., Bagheri, P., Washiyama, S., Chang, A., … Sitar, Z. (2022, January 3). Journal of Applied Physics, Vol. 1.
Contributors: D. Szymanski n, D. Khachariya n, T. Eldred n, P. Bagheri n, S. Washiyama n, A. Chang *, S. Pavlidis n, *
2022 article
High electron mobility in AlN:Si by point and extended defect management
Bagheri, P., Quiñones-Garcia, C., Khachariya, D., Rathkanthiwar, S., Reddy, P., Kirste, R., … Sitar, Z. (2022, November 9). Journal of Applied Physics, Vol. 11.
Contributors: P. Bagheri n, C. Quiñones-Garcia n , D. Khachariya n, S. Rathkanthiwar n, P. Reddy n , n, S. Mita n, J. Tweedie n, R. Collazo n , Z. Sitar n
2022 article
Large‐Area, Solar‐Blind, Sub‐250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates
Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, February 19). Physica Status Solidi (RRL) - Rapid Research Letters, Vol. 3, p. 2100619.
Contributors: P. Reddy* , W. Mecouch*, M. Breckenridge n, D. Khachariya n, P. Bagheri n, J. Kim n, Y. Guan n, S. Mita*
2022 article
Low resistivity, p-type, N-Polar GaN achieved by chemical potential control
Rathkanthiwar, S., Szymanski, D., Khachariya, D., Bagheri, P., Kim, J. H., Mita, S., … Sitar, Z. (2022, July 19). Applied Physics Express, Vol. 8.
Contributors: S. Rathkanthiwar n, D. Szymanski n, D. Khachariya n, P. Bagheri n, J. Kim n, S. Mita*, P. Reddy* , E. Kohn n
2022 article
Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices
Rathkanthiwar, S., Bagheri, P., Khachariya, D., Mita, S., Pavlidis, S., Reddy, P., … Collazo, R. (2022, April 7). Applied Physics Express, Vol. 5.
Contributors: S. Rathkanthiwar n, P. Bagheri n, D. Khachariya n, S. Mita*, S. Pavlidis n, P. Reddy* , *, J. Tweedie*, Z. Sitar n, R. Collazo n
2022 article
Pseudomorphic growth of thick Al0.6Ga0.4N epilayers on AlN substrates
Rathkanthiwar, S., Dycus, J. H., Mita, S., Kirste, R., Tweedie, J., Collazo, R., & Sitar, Z. (2022, May 16). Applied Physics Letters, Vol. 5.
2022 article
Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates
Khachariya, D., Mita, S., Reddy, P., Dangi, S., Dycus, J. H., Bagheri, P., … Pavlidis, S. (2022, April 25). Applied Physics Letters, Vol. 4.
Contributors: D. Khachariya n, S. Mita*, P. Reddy* , S. Dangi n, J. Dycus*, P. Bagheri n, M. Breckenridge n, R. Sengupta n
2022 article
Spintronic Terahertz Emission in Ultrawide Bandgap Semiconductor/Ferromagnet Heterostructures
Comstock, A., Biliroglu, M., Seyitliyev, D., McConnell, A., Vetter, E., Reddy, P., … Sun, D. (2022, October 31). Advanced Optical Materials, Vol. 10.
Contributors: A. Comstock n, M. Biliroglu n, D. Seyitliyev n, A. McConnell n, E. Vetter n, P. Reddy* , *, D. Szymanski*
2022 article
The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN
Wang, K., Kirste, R., Mita, S., Washiyama, S., Mecouch, W., Reddy, P., … Sitar, Z. (2022, January 17). Applied Physics Letters, Vol. 1.
Contributors: K. Wang n, n, S. Mita n, S. Washiyama n, W. Mecouch n, P. Reddy n , R. Collazo n , Z. Sitar n
2022 article
Tracking of Point Defects in the Full Compositional Range of AlGaN via Photoluminescence Spectroscopy
Kim, J. H., Bagheri, P., Kirste, R., Reddy, P., Collazo, R., & Sitar, Z. (2022, October 26). Physica Status Solidi (a), Vol. 12.
Contributors: J. Kim n, P. Bagheri n, *, P. Reddy* , R. Collazo n & Z. Sitar n
2022 article
Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing
Khachariya, D., Stein, S., Mecouch, W., Breckenridge, M. H., Rathkanthiwar, S., Mita, S., … Sitar, Z. (2022, September 5). Applied Physics Express, Vol. 10.
Contributors: D. Khachariya*, S. Stein n, W. Mecouch*, M. Breckenridge n, S. Rathkanthiwar n, S. Mita*, B. Moody*, P. Reddy*
2021 article
A pathway to highly conducting Ge-doped AlGaN
Bagheri, P., Kim, J. H., Washiyama, S., Reddy, P., Klump, A., Kirste, R., … Sitar, Z. (2021, November 22). Journal of Applied Physics, Vol. 11.
Contributors: P. Bagheri n, J. Kim n, S. Washiyama n, P. Reddy* , A. Klump n, *, S. Mita*, R. Collazo n , Z. Sitar n
2021 article
High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN
Breckenridge, M. H., Bagheri, P., Guo, Q., Sarkar, B., Khachariya, D., Pavlidis, S., … Sitar, Z. (2021, March 15). Applied Physics Letters, Vol. 118.
Contributors: M. Breckenridge n, P. Bagheri n, Q. Guo n, B. Sarkar n, D. Khachariya n, S. Pavlidis n, J. Tweedie*, *
2021 article
On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters
Jadhav, A., Bagheri, P., Klump, A., Khachariya, D., Mita, S., Reddy, P., … Sarkar, B. (2021, November 5). Semiconductor Science and Technology, Vol. 11.
Contributors: A. Jadhav*, P. Bagheri n, A. Klump n, D. Khachariya n, S. Mita*, P. Reddy* , S. Rathkanthiwar n, *
2021 article
On the Ge shallow-to-deep level transition in Al-rich AlGaN
Bagheri, P., Reddy, P., Mita, S., Szymanski, D., Kim, J. H., Guan, Y., … Sitar, Z. (2021, August 3). Journal of Applied Physics, Vol. 8.
Contributors: P. Bagheri n, P. Reddy n , S. Mita n, D. Szymanski n, J. Kim n, Y. Guan n, D. Khachariya n, A. Klump n
2021 article
Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping
Washiyama, S., Mirrielees, K. J., Bagheri, P., Baker, J. N., Kim, J.-H., Guo, Q., … Sitar, Z. (2021, January 25). Applied Physics Letters, Vol. 118.
Contributors: S. Washiyama n, K. Mirrielees n, P. Bagheri n, J. Baker n, J. Kim n, Q. Guo n, *, Y. Guan n
2021 article
Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength
Kirste, R., Sarkar, B., Reddy, P., Guo, Q., Collazo, R., & Sitar, Z. (2021, December 14). Journal of Materials Research/Pratt's Guide to Venture Capital Sources, Vol. 12, pp. 4638–4664.
Contributors: n, B. Sarkar n, P. Reddy n , Q. Guo n, R. Collazo n & Z. Sitar n
2021 article
Structural and optical properties of self-assembled AlN nanowires grown on SiO 2 /Si substrates by molecular beam epitaxy
Gačević, Ž., Grandal, J., Guo, Q., Kirste, R., Varela, M., Sitar, Z., & García, M. A. S. (2021, February 3). Nanotechnology.
2021 article
Study on avalanche breakdown and Poole–Frenkel emission in Al-rich AlGaN grown on single crystal AlN
Reddy, P., Khachariya, D., Mecouch, W., Breckenridge, M. H., Bagheri, P., Guan, Y., … Sitar, Z. (2021, November 1). Applied Physics Letters, Vol. 11.
Contributors: P. Reddy* , D. Khachariya n, W. Mecouch *, M. Breckenridge n, P. Bagheri n, Y. Guan n, J. Kim n, S. Pavlidis n
2021 article
Systematic oxygen impurity reduction in smooth N-polar GaN by chemical potential control
Szymanski, D., Wang, K., Kaess, F., Kirste, R., Mita, S., Reddy, P., … Collazo, R. (2021, November 3). Semiconductor Science and Technology, Vol. 37.
Contributors: D. Szymanski*, K. Wang, F. Kaess*, *, S. Mita*, P. Reddy* , Z. Sitar*, R. Collazo*
2021 article
Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies
Kim, J. H., Bagheri, P., Washiyama, S., Klump, A., Kirste, R., Mita, S., … Sitar, Z. (2021, July 12). Applied Physics Letters, Vol. 7.
Contributors: J. Kim n, P. Bagheri n, S. Washiyama n, A. Klump n, *, S. Mita*, P. Reddy* , R. Collazo n , Z. Sitar n
2020 article
Modulating the Stress Response of E. coli at GaN Interfaces Using Surface Charge, Surface Chemistry, and Genetic Mutations
Gleco, S., Reddy, P., Kirste, R., Collazo, R., LaJeunesse, D., & Ivanisevic, A. (2020, September 15). ACS Applied Bio Materials, Vol. 3, pp. 7211–7218.
Contributors: S. Gleco n, P. Reddy* , *, R. Collazo n , D. Lajeunesse * & A. Ivanisevic n
2020 article
The 2020 UV emitter roadmap
Amano, H., Collazo, R., Santi, C. D., Einfeldt, S., Funato, M., Glaab, J., … Zhang, Y. (2020, July 15). Journal of Physics D Applied Physics, Vol. 53.
Contributors: H. Amano *, R. Collazo n , C. De Santi *, S. Einfeldt *, M. Funato *, J. Glaab *, S. Hagedorn *, A. Hirano
2019 article
Quasi-phase-matched second harmonic generation of UV light using AlN waveguides
Alden, D., Troha, T., Kirste, R., Mita, S., Guo, Q., Hoffmann, A., … Sitar, Z. (2019, March 11). Applied Physics Letters, Vol. 114.
2019 article
The polarization field in Al-rich AlGaN multiple quantum wells
Guo, Q., Kirste, R., Mita, S., Tweedie, J., Reddy, P., Washiyama, S., … Sitar, Z. (2019, May 9). Japanese Journal of Applied Physics, Vol. 58.
Contributors: Q. Guo n, n, S. Mita n, J. Tweedie n, P. Reddy n , S. Washiyama n, M. Breckenridge n, R. Collazo n , Z. Sitar n
2019 article
The role of transient surface morphology on composition control in AlGaN layers and wells
Dycus, J. H., Washiyama, S., Eldred, T. B., Guan, Y., Kirste, R., Mita, S., … LeBeau, J. M. (2019, January 21). Applied Physics Letters, Vol. 114.
2018 article
A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition
Washiyama, S., Reddy, P., Kaess, F., Kirste, R., Mita, S., Collazo, R., & Sitar, Z. (2018, September 18). Journal of Applied Physics, Vol. 124.
Contributors: S. Washiyama n, P. Reddy* , F. Kaess n, *, S. Mita*, R. Collazo n , Z. Sitar n
2018 article
Bulk and Surface Electronic Properties of Inorganic Materials: Tools to Guide Cellular Behavior
Snyder, P. J., Reddy, P., Kirste, R., Collazo, R., & Ivanisevic, A. (2018, July 20). Small Methods, Vol. 2.
Contributors: P. Snyder n, P. Reddy* , *, R. Collazo n & A. Ivanisevic n
2018 article
Structural characteristics of m-plane AlN substrates and homoepitaxial films
Graziano, M. B., Bryan, I., Bryan, Z., Kirste, R., Tweedie, J., Collazo, R., & Sitar, Z. (2018, December 14). Journal of Crystal Growth, Vol. 507, pp. 389–394.
2018 article
Structure of Ultrathin Native Oxides on III–Nitride Surfaces
Dycus, J. H., Mirrielees, K. J., Grimley, E. D., Kirste, R., Mita, S., Sitar, Z., … LeBeau, J. M. (2018, March 20). ACS Applied Materials & Interfaces, Vol. 10, pp. 10607–10611.
2018 article
The influence of point defects on the thermal conductivity of AlN crystals
Rounds, R., Sarkar, B., Alden, D., Guo, Q., Klump, A., Hartmann, C., … Collazo, R. (2018, May 11). Journal of Applied Physics, Vol. 123.
2018 article
Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes
Rounds, R., Sarkar, B., Sochacki, T., Bockowski, M., Imanishi, M., Mori, Y., … Sitar, Z. (2018, September 12). Journal of Applied Physics, Vol. 124.
2018 article
Thermal conductivity of single-crystalline AlN
Rounds, R., Sarkar, B., Klump, A., Hartmann, C., Nagashima, T., Kirste, R., … Collazo, R. (2018, June 11). Applied Physics Express, Vol. 11.
2018 article
Variably doped nanostructured gallium nitride surfaces can serve as biointerfaces for neurotypic PC12 cells and alter their behavior
Snyder, P. J., Reddy, P., Kirste, R., LaJeunesse, D. R., Collazo, R., & Ivanisevic, A. (2018, January 1). RSC Advances, Vol. 8, pp. 36722–36730.
Contributors: P. Snyder n, P. Reddy* , *, D. LaJeunesse *, R. Collazo n & A. Ivanisevic n
2017 article
(Invited) Material Considerations for the Development of III-Nitride Power Devices
Sarkar, B., Reddy, P., Kaess, F., Haidet, B. B., Tweedie, J., Mita, S., … al. (2017, August 17). ECS Transactions, Vol. 80, pp. 29–36.
Contributors: B. Sarkar n, P. Reddy n , F. Kaess n, B. Haidet n, J. Tweedie*, S. Mita*, *, E. Kohn n, R. Collazo n , Z. Sitar n
2017 article
Defect quasi Fermi level control-based CN reduction in GaN: Evidence for the role of minority carriers
Reddy, P., Kaess, F., Tweedie, J., Kirste, R., Mita, S., Collazo, R., & Sitar, Z. (2017, October 9). Applied Physics Letters, Vol. 111, p. 152101.
Contributors: P. Reddy n , F. Kaess n, J. Tweedie*, *, S. Mita*, R. Collazo n , Z. Sitar n
2017 article
High free carrier concentration in p-GaN grown on AlN substrates
Sarkar, B., Mita, S., Reddy, P., Klump, A., Kaess, F., Tweedie, J., … Sitar, Z. (2017, July 17). Applied Physics Letters, Vol. 111, p. 032109.
2017 article
Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatment
Sarkar, B., Haidet, B. B., Reddy, P., Kirste, R., Collazo, R., & Sitar, Z. (2017, June 6). Applied Physics Express, Vol. 10, p. 071001.
Contributors: B. Sarkar n, B. Haidet n, P. Reddy n , n, R. Collazo n & Z. Sitar n
2017 article
Persistent Photoconductivity, Nanoscale Topography, and Chemical Functionalization Can Collectively Influence the Behavior of PC12 Cells on Wide Bandgap Semiconductor Surfaces
Snyder, P. J., Kirste, R., Collazo, R., & Ivanisevic, A. (2017, May 2). Small, Vol. 13.
2016 article
Atomically Thin MoS2 Narrowband and Broadband Light Superabsorbers
Huang, L., Li, G., Gurarslan, A., Yu, Y., Kirste, R., Guo, W., … Cao, L. (2016, August 2). ACS Nano, Vol. 10, pp. 7493–7499.
Contributors: L. Huang n, G. Li n, A. Gurarslan n, Y. Yu n, n, W. Guo n, J. Zhao n, R. Collazo n
2016 article
HgNO3 sensitivity of AlGaN/GaN field effect transistors functionalized with phytochelating peptides
Rohrbaugh, N., Hernandez-Balderrama, L., Kaess, F., Kirste, R., Collazo, R., & Ivanisevic, A. (2016, June 1). AIP Advances, Vol. 6.
2016 article
Nanoscale topography, semiconductor polarity and surface functionalization: additive and cooperative effects on PC12 cell behavior
Snyder, P. J., Kirste, R., Collazo, R., & Ivanisevic, A. (2016, January 1). RSC Advances, Vol. 6, pp. 97873–97881.
2016 article
Photoluminescence changes of III-Nitride lateral polarity structures after chemical functionalization
Berg, N. G., Franke, A., Kirste, R., Collazo, R., & Ivanisevic, A. (2016, December 8). Materials Research Express, Vol. 3.
2016 article
Polarity Control in Group-III Nitrides beyond Pragmatism
Mohn, S., Stolyarchuk, N., Markurt, T., Kirste, R., Hoffmann, M. P., Collazo, R., … Albrecht, M. (2016, May 3). Physical Review Applied, Vol. 5.
2016 article
Strain engineered high reflectivity DBRs in the deep UV
Franke, A., Hoffmann, M. P., Hernandez-Balderrama, L., Kaess, F., Bryan, I., Washiyama, S., … Sitar, Z. (2016, February 26). Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE, Vol. 9748.
2015 article
Charge neutrality levels, barrier heights, and band offsets at polar AlGaN
Reddy, P., Bryan, I., Bryan, Z., Tweedie, J., Washiyama, S., Kirste, R., … Sitar, Z. (2015, August 31). Applied Physics Letters, Vol. 107, p. 091603.
Contributors: P. Reddy n , I. Bryan n, Z. Bryan n, J. Tweedie, S. Washiyama n, n, S. Mita *, R. Collazo n , Z. Sitar n
2015 article
Electronic Biosensors Based on III-Nitride Semiconductors
Kirste, R., Rohrbaugh, N., Bryan, I., Bryan, Z., Collazo, R., & Ivanisevic, A. (2015, June 6). Annual Review of Analytical Chemistry, Vol. 8, pp. 149–169.
2015 article
KOH based selective wet chemical etching of AlN, AlxGa1−xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode
Guo, W., Kirste, R., Bryan, I., Bryan, Z., Hussey, L., Reddy, P., … Sitar, Z. (2015, February 23). Applied Physics Letters, Vol. 106, p. 082110.
2015 article
Neurotypic cell attachment and growth on III-nitride lateral polarity structures
Bain, L. E., Kirste, R., Johnson, C. A., Ghashghaei, H. T., Collazo, R., & Ivanisevic, A. (2015, September 26). Materials Science and Engineering C, Vol. 58, pp. 1194–1198.
2015 article
Optical characterization of Al- and N-polar AlN waveguides for integrated optics
Rigler, M., Buh, J., Hoffmann, M. P., Kirste, R., Bobea, M., Mita, S., … Zgonik, M. (2015, March 24). Applied Physics Express, Vol. 8.
2015 article
Optical properties of aluminum nitride single crystals in the THz region
Majkić, A., Puc, U., Franke, A., Kirste, R., Collazo, R., Sitar, Z., & Zgonik, M. (2015, September 2). Optical Materials Express, Vol. 5, pp. 2106–2111.
2014 article
Exciton transitions and oxygen as a donor in m-plane AlN homoepitaxial films
Bryan, Z., Bryan, I., Bobea, M., Hussey, L., Kirste, R., Sitar, Z., & Collazo, R. (2014, April 2). Journal of Applied Physics, Vol. 115.
2014 article
Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN
Bryan, Z., Bryan, I., Gaddy, B. E., Reddy, P., Hussey, L., Bobea, M., … Collazo, R. (2014, December 1). Applied Physics Letters, Vol. 105, p. 222101.
2014 article
Growth and characterization of AlxGa1−xN lateral polarity structures
Hoffmann, M. P., Kirste, R., Mita, S., Guo, W., Tweedie, J., Bobea, M., … Sitar, Z. (2014, November 18). Physica Status Solidi (a), Vol. 212, pp. 1039–1042.
2014 article
Homoepitaxial AlN thin films deposited on m-plane (11¯00) AlN substrates by metalorganic chemical vapor deposition
Bryan, I., Bryan, Z., Bobea, M., Hussey, L., Kirste, R., Collazo, R., & Sitar, Z. (2014, October 6). Journal of Applied Physics, Vol. 116.
2014 article
Properties of AlN based lateral polarity structures
Kirste, R., Mita, S., Hoffmann, M. P., Hussey, L., Guo, W., Bryan, I., … Sitar, Z. (2014, January 20). Physica Status Solidi. C, Conferences and Critical Reviews/Physica Status Solidi. C, Current Topics in Solid State Physics, Vol. 11, pp. 261–264.
2014 article
Sapphire decomposition and inversion domains in N-polar aluminum nitride
Hussey, L., White, R. M., Kirste, R., Mita, S., Bryan, I., Guo, W., … Sitar, Z. (2014, January 20). Applied Physics Letters, Vol. 104.
2014 article
Schottky contact formation on polar and non-polar AlN
Reddy, P., Bryan, I., Bryan, Z., Tweedie, J., Kirste, R., Collazo, R., & Sitar, Z. (2014, November 18). Journal of Applied Physics, Vol. 116, p. 194503.
Contributors: P. Reddy n , I. Bryan n, Z. Bryan n, J. Tweedie n, n, R. Collazo n , Z. Sitar n
2014 article
Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates
Guo, W., Bryan, Z., Xie, J., Kirste, R., Mita, S., Bryan, I., … Sitar, Z. (2014, March 14). Journal of Applied Physics, Vol. 115.
2014 article
Surface preparation of non‐polar single‐crystalline AlN substrates
Bryan, I., Akouala, C. R., Tweedie, J., Bryan, Z., Rice, A., Kirste, R., … Sitar, Z. (2014, January 22). Physica Status Solidi. C, Conferences and Critical Reviews/Physica Status Solidi. C, Current Topics in Solid State Physics, Vol. 11, pp. 454–457.
2014 article
The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN
Gaddy, B. E., Bryan, Z., Bryan, I., Xie, J., Dalmau, R., Moody, B., … Irving, D. L. (2014, May 19). Applied Physics Letters, Vol. 104.
2013 journal article
Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements
Journal of Applied Physics, 113(10), 103504.
2013 article
Effects of strain on the valence band structure and exciton-polariton energies in ZnO
Wagner, M. R., Callsen, G., Reparaz, J. S., Kirste, R., Hoffmann, A., Rodina, A. V., … Phillips, M. R. (2013, December 30). Physical Review B.
2013 journal article
Ge doped GaN with controllable high carrier concentration for plasmonic applications
Applied Physics Letters, 103(24), 242107.
2013 article
Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures
Xie, J., Mita, S., Bryan, Z., Guo, W., Hussey, L., Moody, B., … Sitar, Z. (2013, April 29). Applied Physics Letters, Vol. 102.
2013 article
Refractive index of III-metal-polar and N-polar AlGaN waveguides grown by metal organic chemical vapor deposition
Rigler, M., Zgonik, M., Hoffmann, M. P., Kirste, R., Bobea, M., Collazo, R., … Gerhold, M. (2013, June 3). Applied Physics Letters, Vol. 102.
2013 article
Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition
Bryan, I., Rice, A., Hussey, L., Bryan, Z., Bobea, M., Mita, S., … Sitar, Z. (2013, February 11). Applied Physics Letters, Vol. 102.
2013 article
Vacancy compensation and related donor-acceptor pair recombination in bulk AlN
Gaddy, B. E., Bryan, Z., Bryan, I., Kirste, R., Xie, J., Dalmau, R., … Irving, D. L. (2013, October 14). Applied Physics Letters, Vol. 103.
2012 article
Fermi Level Control of Point Defects During Growth of Mg-Doped GaN
Bryan, Z., Hoffmann, M., Tweedie, J., Kirste, R., Callsen, G., Bryan, I., … Collazo, R. (2012, December 4). Journal of Electronic Materials, Vol. 42, pp. 815–819.
2012 article
On the origin of the 265 nm absorption band in AlN bulk crystals
Collazo, R., Xie, J., Gaddy, B. E., Bryan, Z., Kirste, R., Hoffmann, M., … Sitar, Z. (2012, May 7). Applied Physics Letters, Vol. 100.
2012 article
Optical signature of Mg-doped GaN: Transfer processes
Callsen, G., Wagner, M. R., Kure, T., Reparaz, J. S., Bügler, M., Brunnmeier, J., … Sitar, Z. (2012, August 23). Physical Review B, Vol. 86.
conference paper
Fabrication and characterization of lateral polar GaN structures for second harmonic generation
Hoffmann, M. P., Gerhold, M., Kirste, R., Rice, A., Akouala, C. R., Xie, J. Q. Q., … Sitar, Z. Quantum sensing and nanophotonic devices x, 8631.
journal article
Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes
Guo, W., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., Collazo, R., & Sitar, Z. Journal of Applied Physics, 117(11).
conference paper
Point defect management in GaN by Fermi-level control during growth
Hoffmann, M. P., Tweedie, J., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., … Collazo, R. Gallium nitride materials and devices ix, 8986.