Ronny Kirste

High conductivity in Ge-doped AlN achieved by a non-equilibrium process

APPLIED PHYSICS LETTERS, 122(14).

High p-conductivity in AlGaN enabled by polarization field engineering

APPLIED PHYSICS LETTERS, 122(15).

The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN

APPLIED PHYSICS LETTERS, 120(3).

Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates

Rathkanthiwar, S., Graziano, M. B., Tweedie, J., Mita, S., Kirste, R., Collazo, R., & Sitar, Z. (2022, October 25). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 10.

Doping and compensation in heavily Mg doped Al-rich AlGaN films

APPLIED PHYSICS LETTERS, 120(8).

GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions

JOURNAL OF APPLIED PHYSICS, 131(1).

High electron mobility in AlN:Si by point and extended defect management

JOURNAL OF APPLIED PHYSICS, 132(18).

Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3.

Low resistivity, p-type, N-Polar GaN achieved by chemical potential control

APPLIED PHYSICS EXPRESS, 15(8).

On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).

Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices

APPLIED PHYSICS EXPRESS, 15(5).

Pseudomorphic growth of thick Al0.6Ga0.4N epilayers on AlN substrates

APPLIED PHYSICS LETTERS, 120(20).

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS, 120(17).

Spintronic Terahertz Emission in Ultrawide Bandgap Semiconductor/Ferromagnet Heterostructures

Comstock, A., Biliroglu, M., Seyitliyev, D., McConnell, A., Vetter, E., Reddy, P., … Sun, D. (2022, October 31). ADVANCED OPTICAL MATERIALS, Vol. 10.

Tracking of Point Defects in the Full Compositional Range of AlGaN via Photoluminescence Spectroscopy

Hyun Kim, J., Bagheri, P., Kirste, R., Reddy, P., Collazo, R., & Sitar, Z. (2022, December 9). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 12.

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

APPLIED PHYSICS EXPRESS, 15(10).

A pathway to highly conducting Ge-doped AlGaN

JOURNAL OF APPLIED PHYSICS, 130(20).

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

APPLIED PHYSICS LETTERS, 118(11).

On the Ge shallow-to-deep level transition in Al-rich AlGaN

JOURNAL OF APPLIED PHYSICS, 130(5).

Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

APPLIED PHYSICS LETTERS, 118(4).

Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength

Kirste, R., Sarkar, B., Reddy, P., Guo, Q., Collazo, R., & Sitar, Z. (2021, December 15). JOURNAL OF MATERIALS RESEARCH, Vol. 12.

Structural and optical properties of self-assembled AlN nanowires grown on SiO2/Si substrates by molecular beam epitaxy

NANOTECHNOLOGY, 32(19).

Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN

APPLIED PHYSICS LETTERS, 119(18).

Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies

APPLIED PHYSICS LETTERS, 119(2).

Modulating the Stress Response of E. coli at GaN Interfaces Using Surface Charge, Surface Chemistry, and Genetic Mutations

ACS APPLIED BIO MATERIALS, 3(10), 7211–7218.

The 2020 UV emitter roadmap

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 53(50).

Quasi-phase-matched second harmonic generation of UV light using AlN waveguides

APPLIED PHYSICS LETTERS, 114(10).

Structural characteristics of m-plane AlN substrates and homoepitaxial films

JOURNAL OF CRYSTAL GROWTH, 507, 389–394.

The polarization field in Al-rich AlGaN multiple quantum wells

Guo, Q., Kirste, R., Mita, S., Tweedie, J., Reddy, P., Washiyama, S., … Sitar, Z. (2019, June 1). JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 58.

The role of transient surface morphology on composition control in AlGaN layers and wells

APPLIED PHYSICS LETTERS, 114(3).

A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 124(11).

Bulk and Surface Electronic Properties of Inorganic Materials: Tools to Guide Cellular Behavior

[Review of ]. SMALL METHODS, 2(9).

Structure of Ultrathin Native Oxides on III-Nitride Surfaces

ACS APPLIED MATERIALS & INTERFACES, 10(13), 10607–10611.

The influence of point defects on the thermal conductivity of AlN crystals

JOURNAL OF APPLIED PHYSICS, 123(18).

Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes

JOURNAL OF APPLIED PHYSICS, 124(10).

Thermal conductivity of single-crystalline AIN

APPLIED PHYSICS EXPRESS, 11(7).

Variably doped nanostructured gallium nitride surfaces can serve as biointerfaces for neurotypic PC12 cells and alter their behavior

RSC ADVANCES, 8(64), 36722–36730.

(Invited) Material Considerations for the Development of III-nitride Power Devices

GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 7, Vol. 80, pp. 29–36.

Defect quasi Fermi level control-based C-N reduction in GaN: Evidence for the role of minority carriers

APPLIED PHYSICS LETTERS, 111(15).

High free carrier concentration in p-GaN grown on AlN substrates

APPLIED PHYSICS LETTERS, 111(3).

Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatment

APPLIED PHYSICS EXPRESS, 10(7).

Persistent Photoconductivity, Nanoscale Topography, and Chemical Functionalization Can Collectively Influence the Behavior of PC12 Cells on Wide Bandgap Semiconductor Surfaces

SMALL, 13(24).

Atomically Thin MoS2 Narrowband and Broadband Light Superabsorbers

ACS NANO, 10(8), 7493–7499.

HgNO3 sensitivity of AlGaN/GaN field effect transistors functionalized with phytochelating peptides

AIP ADVANCES, 6(6).

Nanoscale topography, semiconductor polarity and surface functionalization: additive and cooperative effects on PC12 cell behavior

RSC ADVANCES, 6(100), 97873–97881.

Neurotypic cell attachment and growth on III-nitride lateral polarity structures

MATERIALS SCIENCE & ENGINEERING C-MATERIALS FOR BIOLOGICAL APPLICATIONS, 58, 1194–1198.

Photoluminescence changes of III-Nitride lateral polarity structures after chemical functionalization

MATERIALS RESEARCH EXPRESS, 3(12).

Polarity Control in Group-III Nitrides beyond Pragmatism

PHYSICAL REVIEW APPLIED, 5(5).

Strain engineered high reflectivity DBRs in the deep UV

GALLIUM NITRIDE MATERIALS AND DEVICES XI, Vol. 9748.

Charge neutrality levels, barrier heights, and band offsets at polar AlGaN

APPLIED PHYSICS LETTERS, 107(9).

Electronic Biosensors Based on III-Nitride Semiconductors

ANNUAL REVIEW OF ANALYTICAL CHEMISTRY, VOL 8, Vol. 8, pp. 149–169.

Growth and characterization of AlxGa1-xN lateral polarity structures

Hoffmann, M. P., Kirste, R., Mita, S., Guo, W., Tweedie, J., Bobea, M., … Sitar, Z. (2015, May). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, pp. 1039–1042.

KOH based selective wet chemical etching of AlN, AlxGa1-xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode

APPLIED PHYSICS LETTERS, 106(8).

Optical characterization of Al- and N-polar AlN waveguides for integrated optics

APPLIED PHYSICS EXPRESS, 8(4).

Optical properties of aluminum nitride single crystals in the THz region

OPTICAL MATERIALS EXPRESS, 5(10), 2106–2111.

Exciton transitions and oxygen as a donor in m-plane AlN homoepitaxial films

JOURNAL OF APPLIED PHYSICS, 115(13).

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

APPLIED PHYSICS LETTERS, 105(22).

Homoepitaxial AlN thin films deposited on m-plane (1(1)over-bar00) AlN substrates by metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 116(13).

Properties of AlN based lateral polarity structures

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 2, Vol. 11, pp. 261–264.

Sapphire decomposition and inversion domains in N-polar aluminum nitride

APPLIED PHYSICS LETTERS, 104(3).

Schottky contact formation on polar and non-polar AlN

JOURNAL OF APPLIED PHYSICS, 116(19).

Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

JOURNAL OF APPLIED PHYSICS, 115(10).

Surface preparation of non-polar single-crystalline AlN substrates

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, Vol. 11, pp. 454–457.

The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

APPLIED PHYSICS LETTERS, 104(20).

Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements

Journal of Applied Physics, 113(10), 103504.

Effects of strain on the valence band structure and exciton-polariton energies in ZnO

PHYSICAL REVIEW B, 88(23).

Fermi Level Control of Point Defects During Growth of Mg-Doped GaN

JOURNAL OF ELECTRONIC MATERIALS, 42(5), 815–819.

Ge doped GaN with controllable high carrier concentration for plasmonic applications

Applied Physics Letters, 103(24), 242107.

Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures

APPLIED PHYSICS LETTERS, 102(17).

Refractive index of III-metal-polar and N-polar AlGaN waveguides grown by metal organic chemical vapor deposition

APPLIED PHYSICS LETTERS, 102(22).

Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition

APPLIED PHYSICS LETTERS, 102(6).

Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

APPLIED PHYSICS LETTERS, 103(16).

On the origin of the 265 nm absorption band in AlN bulk crystals

APPLIED PHYSICS LETTERS, 100(19).

Optical signature of Mg-doped GaN: Transfer processes

PHYSICAL REVIEW B, 86(7).

Fabrication and characterization of lateral polar GaN structures for second harmonic generation

Hoffmann, M. P., Gerhold, M., Kirste, R., Rice, A., Akouala, C. R., Xie, J. Q. Q., … Sitar, Z. Quantum sensing and nanophotonic devices x, 8631.

Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes

Guo, W., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., Collazo, R., & Sitar, Z. Journal of Applied Physics, 117(11).

Point defect management in GaN by Fermi-level control during growth

Hoffmann, M. P., Tweedie, J., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., … Collazo, R. Gallium nitride materials and devices ix, 8986.