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2020 journal article
The 2020 UV emitter roadmap
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 53(50).
2019 journal article
Quasi-phase-matched second harmonic generation of UV light using AlN waveguides
APPLIED PHYSICS LETTERS, 114(10).
2019 journal article
Structural characteristics of m-plane AlN substrates and homoepitaxial films
JOURNAL OF CRYSTAL GROWTH, 507, 389–394.
2019 article
The polarization field in Al-rich AlGaN multiple quantum wells
JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 58.
2019 journal article
The role of transient surface morphology on composition control in AlGaN layers and wells
APPLIED PHYSICS LETTERS, 114(3).
2018 journal article
A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition
JOURNAL OF APPLIED PHYSICS, 124(11).
2018 journal article
Bulk and Surface Electronic Properties of Inorganic Materials: Tools to Guide Cellular Behavior
SMALL METHODS, 2(9).
2018 journal article
Structure of ultrathin native oxides on III-nitride surfaces
ACS Applied Materials & Interfaces, 10(13), 10607–10611.
2018 journal article
The influence of point defects on the thermal conductivity of AlN crystals
Journal of Applied Physics, 123(18).
2018 journal article
Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes
JOURNAL OF APPLIED PHYSICS, 124(10).
2018 journal article
Thermal conductivity of single-crystalline AIN
Applied Physics Express, 11(7).
2018 journal article
Variably doped nanostructured gallium nitride surfaces can serve as biointerfaces for neurotypic PC12 cells and alter their behavior
RSC ADVANCES, 8(64), 36722–36730.
2017 journal article
Defect quasi Fermi level control-based C-N reduction in GaN: Evidence for the role of minority carriers
Applied Physics Letters, 111(15).
2017 journal article
High free carrier concentration in p-GaN grown on AlN substrates
Applied Physics Letters, 111(3).
2017 conference paper
Material considerations for the development of III-nitride power devices
Gallium nitride and silicon carbide power technologies 7, 80(7), 29–36.
2017 journal article
Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatment
Applied Physics Express, 10(7).
2017 journal article
Persistent photoconductivity, nanoscale topography, and chemical functionalization can collectively influence the behavior of PC12 cells on wide bandgap semiconductor surfaces
Small (Weinheim An Der Bergstrasse, Germany), 13(24).
2016 journal article
Atomically thin MoS2 narrowband and broadband light superabsorbers
ACS Nano, 10(8), 7493–7499.
2016 journal article
HgNO3 sensitivity of AlGaN/GaN field effect transistors functionalized with phytochelating peptides
AIP Advances, 6(6).
2016 journal article
Nanoscale topography, semiconductor polarity and surface functionalization: Additive and cooperative effects on PC12 cell behavior
RSC Advances, 6(100), 97873–97881.
2016 journal article
Neurotypic cell attachment and growth on III-nitride lateral polarity structures
Materials Science & Engineering. C, Biomimetic Materials, Sensors and Systems, 58, 1194–1198.
2016 journal article
Photoluminescence changes of III-Nitride lateral polarity structures after chemical functionalization
Materials Research Express, 3(12).
2016 journal article
Polarity control in group-III nitrides beyond pragmatism
Physical Review Applied, 5(5).
2016 conference paper
Strain engineered high reflectivity DBRs in the deep UV
Gallium nitride materials and devices xi, 9748.
2015 journal article
Charge neutrality levels, barrier heights, and band offsets at polar AlGaN
Applied Physics Letters, 107(9).
2015 journal article
Electronic biosensors based on III-nitride semiconductors
Annual Review of Analytical Chemistry, Vol 8, 8, 149–169.
2015 journal article
Growth and characterization of AlxGa1-xN lateral polarity structures
Physica Status Solidi. A, Applications and Materials Science, 212(5), 1039–1042.
2015 journal article
KOH based selective wet chemical etching of AlN, AlxGa1-xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode
Applied Physics Letters, 106(8).
2015 journal article
Optical characterization of Al- and N-polar AlN waveguides for integrated optics
Applied Physics Express, 8(4).
2015 journal article
Optical properties of aluminum nitride single crystals in the THz region
Optical Materials Express, 5(10), 2106–2111.
2014 journal article
Exciton transitions and oxygen as a donor in m-plane AlN homoepitaxial films
Journal of Applied Physics, 115(13).
2014 journal article
Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN
Applied Physics Letters, 105(22).
2014 journal article
Homoepitaxial AlN thin films deposited on m-plane (1(1)over-bar00) AlN substrates by metalorganic chemical vapor deposition
Journal of Applied Physics, 116(13).
2014 conference paper
Properties of AlN based lateral polarity structures
Physica status solidi c: current topics in solid state physics, vol 11, no 2, 11(2), 261–264.
2014 journal article
Sapphire decomposition and inversion domains in N-polar aluminum nitride
Applied Physics Letters, 104(3).
2014 journal article
Schottky contact formation on polar and non-polar AlN
Journal of Applied Physics, 116(19).
2014 journal article
Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates
Journal of Applied Physics, 115(10).
2014 conference paper
Surface preparation of non-polar single-crystalline AlN substrates
Physica status solidi c: current topics in solid state physics, vol 11, no 3-4, 11(3-4), 454–457.
2014 journal article
The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN
Applied Physics Letters, 104(20).
2013 journal article
Compensation effects in GaN: Mg probed by Raman spectroscopy and photoluminescence measurements
Journal of Applied Physics, 113(10).
2013 journal article
Effects of strain on the valence band structure and exciton-polariton energies in ZnO
Physical Review. B, Condensed Matter and Materials Physics, 88(23).
2013 journal article
Fermi level control of point defects during growth of Mg-doped GaN
Journal of Electronic Materials, 42(5), 815–819.
2013 journal article
Ge doped GaN with controllable high carrier concentration for plasmonic applications
Applied Physics Letters, 103(24).
2013 journal article
Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures
Applied Physics Letters, 102(17).
2013 journal article
Refractive index of III-metal-polar and N-polar AlGaN waveguides grown by metal organic chemical vapor deposition
Applied Physics Letters, 102(22).
2013 journal article
Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition
Applied Physics Letters, 102(6).
2013 journal article
Vacancy compensation and related donor-acceptor pair recombination in bulk AlN
Applied Physics Letters, 103(16).
2012 journal article
On the origin of the 265 nm absorption band in AlN bulk crystals
Applied Physics Letters, 100(19).
2012 journal article
Optical signature of Mg-doped GaN: Transfer processes
Physical Review. B, Condensed Matter and Materials Physics, 86(7).
conference paper
Fabrication and characterization of lateral polar GaN structures for second harmonic generation
Hoffmann, M. P., Gerhold, M., Kirste, R., Rice, A., Akouala, C. R., Xie, J. Q. Q., … Sitar, Z. Quantum sensing and nanophotonic devices x, 8631.
journal article
Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes
Guo, W., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., Collazo, R., & Sitar, Z. Journal of Applied Physics, 117(11).
conference paper
Point defect management in GaN by Fermi-level control during growth
Hoffmann, M. P., Tweedie, J., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., … Collazo, R. Gallium nitride materials and devices ix, 8986.