Richard T. Kuehn

Effects of Si source gases (SiH4 and Si2H6) on polycrystalline- Si1-xGex deposited on oxide by RTCVD

Electrochemical and Solid State Letters, 1(3), 153–155.

Structure and properties of rapid thermal chemical vapor deposited polycrystalline silicon-germanium films on SiO2 using Si2H6, GeH4, and B2H6 gases

JOURNAL OF APPLIED PHYSICS, 83(10), 5469–5476.

Rapid thermal chemical vapor deposition of in situ boron doped polycrystalline silicon germanium films on silicon dioxide for complimentary metal oxide semiconductor applications

Applied Physics Letters, 71(23), 3388–3390.

Thermal memory cell and thermal system evaluation

Washington, DC: U.S. Patent and Trademark Office.

Thermal memory cell and thermal system evaluation

Washington, DC: U.S. Patent and Trademark Office.