Richard T. Kuehn

Li, V. Z. Q., Mirabedini, M. R., Vogel, E., Henson, K., Batchelor, A. D., Wortman, J. J., & Kuehn, R. T. (1998). Effects of Si source gases (SiH4 and Si2H6) on polycrystalline- Si1-xGex deposited on oxide by RTCVD. Electrochemical and Solid State Letters, 1(3), 153–155.

Li, V. Z. Q., Mirabedini, M. R., Hornung, B. E., Heinisch, H. H., Xu, M., Batchelor, D., … Kuehn, R. T. (1998). Structure and properties of rapid thermal chemical vapor deposited polycrystalline silicon-germanium films on SiO2 using Si2H6, GeH4, and B2H6 gases. JOURNAL OF APPLIED PHYSICS, 83(10), 5469–5476. https://doi.org/10.1063/1.367404

Li, V. Z. Q., Mirabedini, M. R., Kuehn, R. T., Wortman, J. J., Ozturk, M. C., Batchelor, D., … Maher, D. M. (1997). Rapid thermal chemical vapor deposition of in situ boron doped polycrystalline silicon germanium films on silicon dioxide for complimentary metal oxide semiconductor applications. Applied Physics Letters, 71(23), 3388–3390. https://doi.org/10.1063/1.120344

Swartzel, K. R., Ganesan, S. G., Kuehn, R. T., Hamaker, R. W., & Sadeghi, F. (1992). Thermal memory cell and thermal system evaluation. Washington, DC: U.S. Patent and Trademark Office.

Swartzel, K. R., Ganesan, S. G., Kuehn, R. T., Hamaker, R. W., & Sadeghi, F. (1991). Thermal memory cell and thermal system evaluation. Washington, DC: U.S. Patent and Trademark Office.