@article{molaei_bayati_wu_narayan_2014, title={A microstructural approach toward the effect of thickness on semiconductor-to-metal transition characteristics of VO2 epilayers}, volume={115}, number={16}, journal={Journal of Applied Physics}, author={Molaei, R. and Bayati, R. and Wu, F. and Narayan, J.}, year={2014} }
 @article{molaei_bayati_alipour_narayan_2013, title={Controlled epitaxial integration of polar ZnO(0001) with Si(001)}, volume={102}, number={10}, journal={Applied Physics Letters}, author={Molaei, R. and Bayati, M. R. and Alipour, H. M. and Narayan, J.}, year={2013} }
 @article{bayati_molaei_wu_budai_liu_narayan_narayan_2013, title={Correlation between structure and semiconductor-to-metal transition characteristics of VO2/TiO2/sapphire thin film heterostructures}, volume={61}, ISSN={["1873-2453"]}, DOI={10.1016/j.actamat.2013.09.019}, abstractNote={This study focuses on the role of strain and thin film epitaxy on the semiconductor-to-metal transition (SMT) characteristics of single crystalline VO2 thin films. The VO2/TiO2 heterostructures of controlled orientations were epitaxially grown on m-cut, r-cut and c-cut sapphire substrates. Detailed structural investigations were performed using high-resolution X-ray diffraction (2θ–θ and φ scans) and high-resolution transmission electron microscopy techniques to correlate SMT properties with microstructural characteristics. Monoclinic (M1) VO2 thin films with (1 0 0), (0 0 1) and (2¯01) out-of-plane orientations were grown on TiO2(1 0 1)/r-sapphire, TiO2(1 0 0)/c-sapphire and TiO2(0 0 1)/m-sapphire platforms, respectively. The in-plane alignments across the interfaces were established to be [0 1 0](1 0 0)VO2||[0 1 0](1 0 1)TiO2, [1 0 0](0 0 1)VO2||[0 0 1](1 0 0)TiO2 and [010](2¯01)VO2‖[010](001)TiO2 for r-sapphire, c-sapphire and m-sapphire substrates, respectively. We were able to tune the SMT temperature of VO2 epilayers from ∼313 K to 354 K (bulk Tc ≈ 340 K). The SMT characteristics were interpreted based upon the residual strain in the VO2 lattice, particularly along the c-axis of tetragonal VO2. This research introduces the VO2-based single crystalline heterostructures as a potential candidate for a wide range of applications where different transition temperatures are required.}, number={20}, journal={ACTA MATERIALIA}, author={Bayati, M. R. and Molaei, R. and Wu, F. and Budai, J. D. and Liu, Y. and Narayan, R. J. and Narayan, J.}, year={2013}, month={Dec}, pages={7805–7815} }
 @article{molaei_bayati_narayan_2013, title={Crystallographic characteristics and p-Type to n-Type transition in epitaxial NiO thin film}, volume={13}, DOI={10.1021/cg401408f}, abstractNote={We were able to systematically control crystallographic characteristics and electrical properties of nickel oxide epitaxial thin films integrated with cubic yttria-stabilized zirconia (c-YSZ)-buffered silicon(001) substrates. The NiO epilayers were grown under several oxygen partial pressures by pulsed laser deposition. The out-of-plane orientation of the NiO layers showed an interesting behavior where it changed from ⟨111⟩ at lower pressures (7 × 10–6 Torr) to ⟨100⟩ at higher pressures (5 × 10–2 Torr). This observation was attributed to the nature of surface termination and templating effect of the c-YSZ{100} platform at different pressures. With the use of θ–2θ and φ scans of X-ray diffraction, the epitaxial alignment across the NiO/c-YSZ interface was determined to be {111}NiO|||{100}c-YSZ and ⟨110⟩NiO||⟨100⟩c-YSZ for the heterostructure grown under a low pressure and {100}NiO||{100}c-YSZ and ⟨100⟩NiO||⟨100⟩c-YSZ for the heterostructure grown under a high oxygen pressure. Our high-resolution TEM studie...}, number={12}, journal={Crystal Growth and Design}, author={Molaei, R. and Bayati, R. and Narayan, Jagdish}, year={2013}, pages={5459–5465} }
 @article{molaei_bayati_nori_kumar_prater_narayan_2013, title={Diamagnetic to ferromagnetic switching in VO2 epitaxial thin films by nanosecond excimer laser treatment}, volume={103}, number={25}, journal={Applied Physics Letters}, author={Molaei, R. and Bayati, R. and Nori, S. and Kumar, D. and Prater, J. T. and Narayan, J.}, year={2013} }
 @article{bayati_alipour_joshi_molaei_narayan_narayan_misture_2013, title={Thin-Film Epitaxy and Enhancement of Photocatalytic Activity of Anatase/Zirconia Heterostructures by Nanosecond Excimer Laser Treatment}, volume={117}, ISSN={["1932-7447"]}, DOI={10.1021/jp400545t}, abstractNote={We present a novel method to improve the photocatalytic efficiency of epitaxial c-axis anatase TiO2 thin films by a factor of 2 by using nanosecond laser annealing. The anatase films were epitaxially grown by pulsed laser deposition on Si(001) substrates, where a tetragonal yttria-stabilized zirconia (t-YSZ) buffer was used to effectively remove the native SiOx layer from the substrates prior to deposition of anatase. With the information from X-ray and TEM diffraction patterns, the epitaxial relationship across the interfaces was shown to be: (001)[110]anatase||(001)[110]t-YSZ||(001)[001]silicon. Performing high-temperature XRD, we observed that the anatase epilayers were stable up to 1100 °C, far beyond the normal anatase-to-rutile transition temperature (approximately 600–700 °C). The samples were subsequently laser-annealed in air by a single pulse of KrF excimer laser beam at an energy density of ∼0.3 J.cm–2. On the basis of the detailed HRTEM studies, the interface between the laser annealed and the...}, number={14}, journal={JOURNAL OF PHYSICAL CHEMISTRY C}, author={Bayati, M. R. and Alipour, H. M. and Joshi, S. and Molaei, R. and Narayan, R. J. and Narayan, J. and Misture, S. T.}, year={2013}, month={Apr}, pages={7138–7147} }
 @article{bayati_gupta_molaei_narayan_narayan_2012, title={Phase Tuning, Thin Film Epitaxy, Interfacial Modeling, and Properties of YSZ-Buffered TiO2 on Si(001) Substrate}, volume={12}, ISSN={1528-7483 1528-7505}, url={http://dx.doi.org/10.1021/cg3007124}, DOI={10.1021/cg3007124}, abstractNote={We have studied systematically the influence of pulsed laser deposition variables on microstructure and properties of TiO2 epitaxial thin films where integration with Si(100) substrate was achieved by cubic yttria-stabilized-zirconia (c-YSZ) buffer layer. Details of crystallographic and atomic arrangements across the interfaces are discussed in the light of the domain matching epitaxy paradigm. The single crystalline rutile films were obtained at higher substrate temperatures and lower oxygen pressures; whereas, the growth of epitaxial anatase films was promoted by decreasing the temperature and increasing the oxygen pressure. We showed that crystallographic structure of the TiO2 films is determined mainly by the termination structure of the c-YSZ layer and the bonding characteristics across the TiO2/c-YSZ interface. Using 2θ and φ scans of XRD, the epitaxial relationship between Si(100) substrate and the zirconia buffer layer was shown to be cube-on-cube: (001)[100]YSZ∥(001)[100]Si. Furthermore, the epit...}, number={9}, journal={Crystal Growth & Design}, publisher={American Chemical Society (ACS)}, author={Bayati, M. R. and Gupta, P. and Molaei, R. and Narayan, R. J. and Narayan, J.}, year={2012}, month={Aug}, pages={4535–4544} }
 @article{bayati_joshi_molaei_narayan_narayan_2012, title={Structure-property correlation in epitaxial (200) rutile films on sapphire substrates}, volume={187}, ISSN={["0022-4596"]}, DOI={10.1016/j.jssc.2012.01.031}, abstractNote={We have investigated the influence of the deposition variables on photocatalytic properties of epitaxial rutile films. Despite a large lattice misfit of rutile with sapphire substrate, (2 0 0) epitaxial layers were grown on (0 0 0 1)sapphire by domain matching epitaxy paradigm. Using φ-scan XRD and cross section TEM, the epitaxial relationship was determined to be rutile(1 0 0)||sapphire(0 0 0 1), rutile(0 0 1)||sapphire(1 0 −1 0), and rutile(0 1 0)||sapphire(1 −2 1 0). Based on the XRD patterns, increasing the repetition rate introduced tensile stress along the film normal direction, which may arise as a result of trapped defects. Formation of such defects was studied by UV–VIS, PL, and XPS techniques. AFM studies showed that the film roughness increases with the repetition rate. Finally, photocatalytic performance of the layers was investigated through measuring decomposition rate of 4-chlorophenol on the films surface. The films grown at higher frequencies revealed higher photocatalytic efficiency. This behavior was mainly related to formation of point defects which enhance the charge separation.}, journal={JOURNAL OF SOLID STATE CHEMISTRY}, author={Bayati, M. R. and Joshi, Sh and Molaei, R. and Narayan, R. J. and Narayan, J.}, year={2012}, month={Mar}, pages={231–237} }
 @article{molaei_bayati_narayan_2012, title={Thin film epitaxy and near bulk semiconductor to metal transition in VO2/NiO/YSZ/Si(001) heterostructures}, volume={27}, ISSN={["2044-5326"]}, DOI={10.1557/jmr.2012.374}, abstractNote={Abstract}, number={24}, journal={JOURNAL OF MATERIALS RESEARCH}, author={Molaei, Roya and Bayati, Mohammad Reza and Narayan, Jagdish}, year={2012}, month={Dec}, pages={3103–3109} }