@article{yu_chung_shewmon_ho_carpenter_larrabee_sun_jones_ade_o'connor_et al._2017, title={Flexible inorganic ferroelectric thin films for nonvolatile memory devices}, volume={27}, number={21}, journal={Advanced Functional Materials}, author={Yu, H. and Chung, C. C. and Shewmon, N. and Ho, S. and Carpenter, J. H. and Larrabee, R. and Sun, T. L. and Jones, J. L. and Ade, H. and O'Connor, B. T. and et al.}, year={2017} }
 @article{ho_yu_so_2017, title={Transparent indium-tin oxide/indium-gallium-zinc oxide Schottky diodes formed by gradient oxygen doping}, volume={111}, ISSN={["1077-3118"]}, DOI={10.1063/1.4993430}, abstractNote={Amorphous InGaZnO (a-IGZO) is promising for transparent electronics due to its high carrier mobility and optical transparency. However, most metal/a-IGZO junctions are ohmic due to the Fermi-level pinning at the interface, restricting their device applications. Here, we report that indium-tin oxide/a-IGZO Schottky diodes can be formed by gradient oxygen doping in the a-IGZO layer that would otherwise form an ohmic contact. Making use of back-to-back a-IGZO Schottky junctions, a transparent IGZO permeable metal-base transistor is also demonstrated with a high common-base gain.}, number={21}, journal={APPLIED PHYSICS LETTERS}, author={Ho, Szuheng and Yu, Hyeonggeun and So, Franky}, year={2017}, month={Nov} }