Is this your profile?
Claim your Citation Index profile in order to display more information about you and gain access to Libraries services. Just create or connect your ORCID iD.
2019 article
Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019)
JOURNAL OF CRYSTAL GROWTH.
2019 journal article
Multiple Epsilon-Near-Zero Resonances in Multilayered Cadmium Oxide: Designing Metamaterial-Like Optical Properties in Monolithic Materials
ACS PHOTONICS, 6(5), 1139–1145.
2019 journal article
Oxygen and silicon point defects in Al0.65Ga0.35N
PHYSICAL REVIEW MATERIALS, 3(5).
2019 journal article
Quasi-phase-matched second harmonic generation of UV light using AlN waveguides
APPLIED PHYSICS LETTERS, 114(10).
2019 journal article
Structural characteristics of m-plane AlN substrates and homoepitaxial films
JOURNAL OF CRYSTAL GROWTH, 507, 389–394.
2019 article
The polarization field in Al-rich AlGaN multiple quantum wells
JAPANESE JOURNAL OF APPLIED PHYSICS.
2019 journal article
The role of transient surface morphology on composition control in AlGaN layers and wells
APPLIED PHYSICS LETTERS, 114(3).
2018 journal article
A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition
JOURNAL OF APPLIED PHYSICS, 124(11).
2018 journal article
Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD
Applied Physics Letters, 112(6).
2018 journal article
Improvement in detection limit for time-of-flight SIMS analysis of dopants in GaN structures
Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 36(3).
2018 journal article
Nitride surface chemistry influence on band offsets at epitaxial oxide/GaN interfaces
Applied Physics Letters, 112(9).
2018 conference paper
On Contacts to III-nitride deep-UV emitters
In 2018 3rd International Conference on Microwave and Photonics (ICMAP).
2018 journal article
On compensation in Si-doped AlN
Applied Physics Letters, 112(15).
2018 journal article
Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(6).
2018 journal article
Point-defect nature of the ultraviolet absorption band in AIN
Physical Review Applied, 9(5).
2018 journal article
Probing collective oscillation of d-orbital electrons at the nanoscale
Applied Physics Letters, 112(6).
2018 journal article
Structure of ultrathin native oxides on III-nitride surfaces
ACS Applied Materials & Interfaces, 10(13), 10607–10611.
2018 journal article
The influence of point defects on the thermal conductivity of AlN crystals
Journal of Applied Physics, 123(18).
2018 journal article
Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes
JOURNAL OF APPLIED PHYSICS, 124(10).
2018 journal article
Thermal conductivity of single-crystalline AIN
Applied Physics Express, 11(7).
2017 journal article
Defect quasi Fermi level control-based C-N reduction in GaN: Evidence for the role of minority carriers
Applied Physics Letters, 111(15).
2017 journal article
Defect-free Ni/GaN Schottky barrier behavior with high temperature stability
Applied Physics Letters, 110(1).
2017 journal article
High free carrier concentration in p-GaN grown on AlN substrates
Applied Physics Letters, 111(3).
2017 conference paper
Material considerations for the development of III-nitride power devices
In Gallium nitride and silicon carbide power technologies 7 (Vol. 80, pp. 29–36).
2017 journal article
Model for the deep defect-related emission bands between 1.4 and 2.4 eV in AlN
Physica Status Solidi. B, Basic Solid State Physics, 254(8).
2017 journal article
Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN
Japanese Journal of Applied Physics, 56(10).
2017 journal article
Optical nonlinear and electro-optical coefficients in bulk aluminium nitride single crystals
Physica Status Solidi. B, Basic Solid State Physics, 254(9).
2017 journal article
Optical signatures of silicon and oxygen related DX centers in AlN
Physica Status Solidi. A, Applications and Materials Science, 214(9).
2017 journal article
Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatment
Applied Physics Express, 10(7).
2017 journal article
Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN
Journal of Applied Physics, 122(24).
2017 journal article
Slow decay of a defect-related emission band at 2.05eV in AlN: Signatures of oxygen-related DX states
Physica Status Solidi. B, Basic Solid State Physics, 254(5).
2017 journal article
Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy
APL Materials, 5(9).
2016 journal article
Atomically thin MoS2 narrowband and broadband light superabsorbers
ACS Nano, 10(8), 7493–7499.
2016 journal article
Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition
Journal of Applied Physics, 120(10).
2016 journal article
Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications
Applied Physics Letters, 108(26).
2016 journal article
High reflectivity III-nitride UV-C distributed Bragg reflectors for vertical cavity emitting lasers
Journal of Applied Physics, 120(13).
2016 journal article
High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies
Journal of Applied Physics, 119(14).
2016 journal article
Influence of high-temperature processing on the surface properties of bulk AlN substrates
Journal of Crystal Growth, 446, 33–38.
2016 journal article
Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control
Journal of Applied Physics, 120(18).
2016 journal article
Polarity control in group-III nitrides beyond pragmatism
Physical Review Applied, 5(5).
2016 journal article
Selective area epitaxy of magnesium oxide thin films on gallium nitride surfaces
Journal of Materials Research, 31(1), 36–45.
2016 conference paper
Strain engineered high reflectivity DBRs in the deep UV
In Gallium nitride materials and devices xi (Vol. 9748).
2016 journal article
Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides
Journal of Crystal Growth, 438, 81–89.
2016 journal article
The Effect of illumination power density on carbon defect configuration in silicon doped gan
Journal of Applied Physics, 120(23).
2016 journal article
The role of surface kinetics on composition and quality of AlGaN
Journal of Crystal Growth, 451, 65–71.
2016 journal article
UV second harmonic generation in AlN waveguides with modal phase matching
Optical Materials Express, 6(6), 2014–2023.
2016 journal article
Very slow decay of a defect related emission band at 2.4 eV in AlN: Signatures of the Si related shallow DX state
Journal of Applied Physics, 119(15).
2015 journal article
A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN
Journal of Applied Physics, 117(24).
2015 review
AlGaN devices and growth of device structures
Journal of Materials Science.
2015 journal article
Charge neutrality levels, barrier heights, and band offsets at polar AlGaN
Applied Physics Letters, 107(9).
2015 journal article
Fabrication of vertical Schottky barrier diodes on n-type freestanding AIN substrates grown by hydride vapor phase epitaxy
Applied Physics Express, 8(6).
2015 journal article
Growth and characterization of AlxGa1-xN lateral polarity structures
Physica Status Solidi. A, Applications and Materials Science, 212(5), 1039–1042.
2015 journal article
High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates
Applied Physics Letters, 106(14).
2015 journal article
KOH based selective wet chemical etching of AlN, AlxGa1-xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode
Applied Physics Letters, 106(8).
2015 journal article
Optical characterization of Al- and N-polar AlN waveguides for integrated optics
Applied Physics Express, 8(4).
2015 journal article
Optical properties of aluminum nitride single crystals in the THz region
Optical Materials Express, 5(10), 2106–2111.
2015 journal article
Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates
Applied Physics Letters, 106(23).
2014 journal article
Characterization of threading dislocations in pvt-grown aln substrates via x-ray topography and ray tracing simulation
Journal of Electronic Materials, 43(4), 838–842.
2014 journal article
Dependence on pressure of the refractive indices of wurtzite ZnO, GaN, and AlN
Physical Review. B, Condensed Matter and Materials Physics, 90(4).
2014 journal article
Exciton transitions and oxygen as a donor in m-plane AlN homoepitaxial films
Journal of Applied Physics, 115(13).
2014 journal article
Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN
Applied Physics Letters, 105(22).
2014 journal article
HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties
Journal of Crystal Growth, 394, 55–60.
2014 journal article
Homoepitaxial AlN thin films deposited on m-plane (1(1)over-bar00) AlN substrates by metalorganic chemical vapor deposition
Journal of Applied Physics, 116(13).
2014 journal article
Phonon pressure coefficients and deformation potentials of wurtzite AlN determined by uniaxial pressure-dependent Raman measurements
Physical Review. B, Condensed Matter and Materials Physics, 90(20).
2014 journal article
Polarity characterization by anomalous x-ray dispersion of ZnO films and GaN lateral polar structures
Journal of Applied Physics, 115(4).
2014 conference paper
Properties of AlN based lateral polarity structures
In Physica status solidi c: current topics in solid state physics, vol 11, no 2 (Vol. 11, pp. 261–264).
2014 journal article
Sapphire decomposition and inversion domains in N-polar aluminum nitride
Applied Physics Letters, 104(3).
2014 journal article
Schottky contact formation on polar and non-polar AlN
Journal of Applied Physics, 116(19).
2014 journal article
Smooth cubic commensurate oxides on gallium nitride
Journal of Applied Physics, 115(6).
2014 journal article
Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates
Journal of Applied Physics, 115(10).
2014 conference paper
Surface preparation of non-polar single-crystalline AlN substrates
In Physica status solidi c: current topics in solid state physics, vol 11, no 3-4 (Vol. 11, pp. 454–457).
2014 journal article
The effect of polarity and surface states on the Fermi level at III-nitride surfaces
Journal of Applied Physics, 116(12).
2014 journal article
The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN
Applied Physics Letters, 104(20).
2013 journal article
Aqueous stability of Ga- and N-polar gallium nitride
Langmuir, 29(1), 216–220.
2013 journal article
Cell behavior on gallium nitride surfaces: Peptide affinity attachment versus covalent functionalization
Langmuir, 29(26), 8377–8384.
2013 journal article
Comparative study of etching high crystalline quality AlN and GaN
Journal of Crystal Growth, 366, 20–25.
2013 journal article
Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions
Applied Physics Letters, 103(12).
2013 journal article
Epitaxial PbxZr1-xTiO3 on GaN
Journal of Applied Physics, 113(7).
2013 article
Epitaxial lead zirconate titanate on gallium nitride (vol 113, 074107, 2013)
Journal of Applied Physics.
2013 journal article
Excitonic emission dynamics in homoepitaxial AlN films studied using polarized and spatio-time-resolved cathodoluminescence measurements
Applied Physics Letters, 103(14).
2013 journal article
Fermi level control of point defects during growth of Mg-doped GaN
Journal of Electronic Materials, 42(5), 815–819.
2013 journal article
Ge doped GaN with controllable high carrier concentration for plasmonic applications
Applied Physics Letters, 103(24).
2013 journal article
Kinase detection with gallium nitride based high electron mobility transistors
Applied Physics Letters, 103(1).
2013 journal article
Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures
Applied Physics Letters, 102(17).
2013 journal article
Performance and reliability of deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy
Applied Physics Express, 6(9).
2013 journal article
Polarity control and growth of lateral polarity structures in AlN
Applied Physics Letters, 102(18).
2013 journal article
Preparation of free-standing GaN substrates from thick GaN layers crystallized by hydride vapor phase epitaxy on ammonothermally grown GaN seeds
Applied Physics Express, 6(7).
2013 journal article
Refractive index of III-metal-polar and N-polar AlGaN waveguides grown by metal organic chemical vapor deposition
Applied Physics Letters, 102(22).
2013 journal article
Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition
Applied Physics Letters, 102(6).
2013 journal article
Universal phonon mean free path spectra in crystalline semiconductors at high temperature
Scientific Reports, 3.
2013 journal article
Vacancy compensation and related donor-acceptor pair recombination in bulk AlN
Applied Physics Letters, 103(16).
2013 journal article
X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN
Journal of Applied Physics, 113(12).
2012 journal article
Deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy
Applied Physics Express, 5(12).
2012 journal article
Lateral epitaxial overgrowth of nitrogen polar GaN on smooth nitrogen polar GaN templates by metalorganic chemical vapor deposition
Journal of Applied Physics, 112(11).
2012 journal article
On the origin of the 265 nm absorption band in AlN bulk crystals
Applied Physics Letters, 100(19).
2012 journal article
Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN
Physica Status Solidi. B, Basic Solid State Physics, 249(3), 511–515.
2012 journal article
Optical signature of Mg-doped GaN: Transfer processes
Physical Review. B, Condensed Matter and Materials Physics, 86(7).
2012 journal article
Preparation of a freestanding AIN substrate from a thick AIN layer grown by hydride vapor phase epitaxy on a Bulk AIN substrate prepared by physical vapor transport
Applied Physics Express, 5(5).
2012 conference paper
Schottky barrier and interface chemistry for Ni contacted to Al0.8Ga0.2N grown on c-oriented AlN single crystal substrates
In Physica status solidi c: current topics in solid state physics, vol 9, no 3-4 (Vol. 9, pp. 584–587).
2012 journal article
Structural and optical properties of carbon-doped AlN substrates grown by hydride vapor phase epitaxy using AlN substrates prepared by physical vapor transport
Applied Physics Express, 5(12).
2012 journal article
Surfactant assisted growth of MgO films on GaN
Applied Physics Letters, 101(9).
2012 journal article
The 7th International Workshop on Bulk Nitride Semiconductors Koyasan, Wakayama, Japan 15-20 March 2011 Preface
Journal of Crystal Growth, 350(1), 1–1.
2012 journal article
Weakly charged cationic nanoparticles induce DNA bending and strand separation
Advanced Materials, 24(31), 4261-.
2011 conference paper
265 nm light emitting diodes on AlN single crystal substrates: Growth and characterization
In 2011 Conference on Lasers and Electro-Optics (CLEO).
2011 journal article
Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates
Journal of the Electrochemical Society, 158(5), H530–535.
2011 journal article
On the strain in n-type GaN
Applied Physics Letters, 99(14).
2011 conference paper
Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications
In Physica status solidi c: current topics in solid state physics, vol 8, no 7-8 (Vol. 8).
2011 journal article
Sharp bound and free exciton lines from homoepitaxial AlN
Physica Status Solidi. A, Applications and Materials Science, 208(7), 1520–1522.
2011 journal article
Spectroscopic measurements of the surface stoichiometry of chemical vapor deposited GaN
Applied Physics Letters, 98(8).
2011 journal article
Strain in Si doped GaN and the Fermi level effect
Applied Physics Letters, 98(20).
2011 journal article
Surfactant-enabled epitaxy through control of growth mode with chemical boundary conditions
Nature Communications, 2.
2010 journal article
Critical examination of growth rate for magnesium oxide (MgO) thin films deposited by molecular beam epitaxy with a molecular oxygen flux
Journal of Materials Research, 25(4), 670–679.
2010 journal article
Free-standing lithium niobate microring resonators for hybrid integrated optics
IEEE Photonics Technology Letters, 22(4), 251–253.
2010 conference paper
Growth of AlN single crystalline boules
In Journal of Crystal Growth (Vol. 312, pp. 2519–2521).
2010 conference paper
Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity
In Physica Status Solidi. A, Applications and Materials Science (Vol. 207, pp. 45–48).
2010 conference paper
Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1-xN (0 <= x <= 1) deposition by LP OMVPE
In Journal of Crystal Growth (Vol. 312, pp. 1321–1324).
2010 journal article
Optical properties of InN grown on templates with controlled surface polarities
Physica Status Solidi. A, Applications and Materials Science, 207(10), 2351–2354.
2010 patent
Seeded growth process for preparing aluminum nitride single crystals
2010 journal article
Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition
Journal of Applied Physics, 108(4).
2010 journal article
The effect of N-polar GaN domains as Ohmic contacts
Applied Physics Letters, 97(12).
2010 journal article
X-ray characterization of composition and relaxation of AlxGa1-xN(0 <= x <= 1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy
Journal of Applied Physics, 108(4).
2009 journal article
Advances in bulk crystal growth of AlN and GaN
MRS Bulletin, 34(4), 259–265.
2009 patent
Dense, shaped articles constructed of a refractory material and methods of preparing such articles
2009 journal article
Epitaxial Ba0.5Sr0.5TiO3-GaN heterostructures with abrupt interfaces
Journal of Crystal Growth, 311(4), 1106–1109.
2009 conference paper
Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition
In Journal of Crystal Growth (Vol. 311, pp. 3044–3048).
2009 journal article
Seeded growth of AlN bulk crystals in m- and c-orientation
Journal of Crystal Growth, 312(1), 58–63.
2008 journal article
Direct observation of inversion domain boundaries of GaN on c-sapphire at sub-Angstrom resolution
Advanced Materials, 20(11), 2162-.
2008 journal article
Epitaxial growth of the metastable phase ytterbium monoxide on gallium nitride surfaces
Journal of Crystal Growth, 310(1), 51–56.
2008 journal article
Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition
Journal of Applied Physics, 104(1).
2008 journal article
Modulated precursor flow epitaxial growth of AlN layers on native AlN substrates by metal-organic chemical vapor deposition
Applied Physics Letters, 93(2).
2008 journal article
Seeded growth of AlN on SiC substrates and defect characterization
Journal of Crystal Growth, 310(10), 2464–2470.
2008 journal article
Spectroscopic analysis of the epitaxial CaO (111)-GaN (0002) interface
Applied Physics Letters, 92(8).
2008 journal article
Surface water reactivity of polycrystalline MgO and CaO films investigated using x-ray photoelectron spectroscopy
Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 26(6), 1507–1510.
2008 journal article
The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition
Applied Physics Letters, 92(4).
2008 journal article
Thermodynamic and kinetic study of transport and reaction phenomena in gallium nitride epitaxy growth
International Journal of Heat and Mass Transfer, 51(5-6), 1264–1280.
2008 journal article
Three-dimensional geometry of nanometer-scale AlN pits: A new template for quantum dots?
Advanced Materials, 20(1), 134-.
2008 journal article
lu Different optical absorption edges in AlN bulk crystals grown in m- and c-orientations
Applied Physics Letters, 93(13).
2007 journal article
Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy
Journal of Applied Physics, 102(7).
2007 journal article
Effect of thermal environment evolution on A1N bulk sublimation crystal growth
Journal of Crystal Growth, 306(1), 39–46.
2007 journal article
Electronic high temperature characteristics of AlN
Electronics Letters, 43(10), 592–594.
2007 journal article
Epitaxial calcium oxide films deposited on gallium nitride surfaces
Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 25(3), 1029–1032.
2007 journal article
Simultaneous growth of a GaN p/n lateral polarity junction by polar selective doping
Applied Physics Letters, 91(21).
2007 journal article
Sublimation growth of aluminum nitride on silicon carbide substrate with aluminum nitride-silicon carbide alloy transition layer
Journal of Materials Research, 22(3), 675–680.
2007 journal article
Synthesis of erbium-doped gallium nitride crystals by the ammonothermal route
Journal of Crystal Growth, 308(1), 71–79.
2007 journal article
The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence
Applied Physics Letters, 91(20).
2007 journal article
X-ray photoelectron spectroscopy characterization of aluminum nitride surface oxides: Thermal and hydrothermal evolution
Journal of Electronic Materials, 36(4), 414–419.
2006 journal article
Ammonothermal synthesis of aluminum nitride crystals on group III-nitride templates
Journal of Electronic Materials, 35(5), 1104–1111.
2006 journal article
Characterization of bulk grown GaN and AlN single crystal materials
Journal of Crystal Growth, 287(2), 349–353.
2006 journal article
Comparative study of textured diamond films by thermal conductivity measurements
Applied Physics. A, Materials Science & Processing (Online), 85(3), 331–335.
2006 journal article
Current-voltage characteristics of n/n lateral polarity junctions in GaN
Applied Physics Letters, 89(5).
2006 journal article
Growth of Ga- and N- polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers
Journal of Crystal Growth, 287(2), 586–590.
2006 journal article
Investigation of the effect of the total pressure and methane concentration on the growth rate and quality of diamond thin films grown by MPCVD
Diamond and Related Materials, 15(11-12), 1784–1788.
2006 journal article
MgO epitaxy on GaN (0002) surfaces by molecular beam epitaxy
Applied Physics Letters, 88(21).
2006 journal article
Molecular beam epitaxy of Sm2O3, Dy2O3, and Ho2O3 on Si (111)
Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 24(4), 2105–2110.
2006 journal article
Seeded growth of AlN crystals on nonpolar seeds via physical vapor transport
Journal of Electronic Materials, 35(7), 1513–1517.
2006 journal article
Seeded growth of AlN on N- and Al-polar < 0 0 0 1 > AlN seeds by physical vapor transport
Seeded growth of AlN on N- and Al-polar < 0 0 0 1 > AlN seeds by physical vapor transport. Journal of Crystal Growth, 286(2), 205–208.
2006 journal article
Seeded growth of AlN single crystals by physical vapor transport
Journal of Crystal Growth, 287(2), 372–375.
2006 journal article
Silicon-on-diamond - An engineered substrate for electronic applications
Diamond and Related Materials, 15(2-3), 248–253.
2005 journal article
AlN bulk crystals grown on SiC seeds
Journal of Crystal Growth, 281(1), 68–74.
2005 journal article
Bulk nitride workshop - Preface
Journal of Crystal Growth, 281(1), 1.
2005 journal article
Crucible materials for growth of aluminum nitride crystals
Journal of Crystal Growth, 281(1), 75–80.
2005 journal article
Design of an RF-heated bulk AlN growth reactor: Induction heating and heat transfer modeling
Crystal Growth and Design, 5(4), 1491–1498.
2005 journal article
Fabrication and thermal evaluation of silicon on diamond wafers
Journal of Electronic Materials, 34(7), 1089–1094.
2005 journal article
Silicon-on-diamond: An advanced silicon-on-insulator technology
Diamond and Related Materials, 14(07-Mar), 308–313.
2005 personal communication
Transmission electron microscopy studies of the bonded SiC-SiC interface
Journal of Materials Science.
2004 journal article
Band-edge exciton states in AlN single crystals and epitaxial layers
Applied Physics Letters, 85(19), 4334–4336.
2004 journal article
Growth of AlN crystals on AlN/SiC seeds by AlN powder sublimation in nitrogen atmosphere
MRS Internet Journal of Nitride Semiconductor Research, 9(2).
2004 journal article
Influence of relative wafer rotation on the electrical properties of the bonded SiC/SiC interface
Applied Physics Letters, 84(20), 3993–3995.
2004 journal article
Mass transfer in A1N crystal growth at high temperatures
Journal of Crystal Growth, 264(1/3), 369–378.
2004 journal article
Model for the influence of boron impurities on the morphology of AIN grown by physical vapor transport
Surface Science, 560(03-Jan), L202–206.
2004 journal article
Nanoscale GaN whiskers fabricated by photoelectrochemical etching
Journal of Applied Physics, 96(9), 5185–5188.
2004 journal article
Processing and thermal properties of highly oriented diamond thin films
Thin Solid Films, 469-70(Dec 22 2004), 105–111.
2004 journal article
Selective etching of GaN from AlGaN/GaN and AlN/GaN structures
MRS Internet Journal of Nitride Semiconductor Research, 9(5).
2004 journal article
The growth and optical properties of large, high-quality AlN single crystals
Journal of Applied Physics, 96(10), 5870–5876.
2004 journal article
Wafer bonding of highly oriented diamond to silicon
Diamond and Related Materials, 13(10), 1816–1821.
2003 journal article
Band-gap dependence of field emission from one-dimensional nanostructures grown on n-type and p-type silicon substrates
Physical Review. B, Condensed Matter and Materials Physics, 68(12).
2003 journal article
Bias frequency, waveform and duty-cycle effects on the bias-enhanced nucleation of epitaxial diamond
Thin Solid Films, 440(02-Jan), 145–151.
2003 journal article
Electron energy distribution during high-field transport in AlN
Journal of Applied Physics, 93(5), 2765–2771.
2003 journal article
Mechanisms limiting electron field emission from diamond
New Diamond and Frontier Carbon Technology, 13(5), 285–295.
2003 journal article
Processing routes for direct bonding of silicon to epitaxially textured diamond
Diamond and Related Materials, 12(3-7), 257–261.
2003 journal article
Thermal conductivity of epitaxially textured diamond films
Diamond and Related Materials, 12(1), 61–64.
2002 journal article
AC vs. DC bias-enhanced nucleation of highly oriented diamond on silicon (100)
Journal of the Electrochemical Society, 149(2), G114–117.
2002 journal article
Direct fusion bonding of silicon to polycrystalline diamond
Diamond and Related Materials, 11(3-6), 482–486.
2002 journal article
Experimental observation of electron velocity overshoot in AlN
Applied Physics Letters, 81(27), 5189–5191.
2002 journal article
Growth and decomposition of bulk GaN: role of the ammonia/nitrogen ratio
Journal of Crystal Growth, 236(4), 529–537.
2002 journal article
Growth of bulk AlN crystals by vaporization of aluminum in a nitrogen atmosphere
Journal of Crystal Growth, 234(2-3), 349–353.
2002 journal article
High temperature nucleation and growth of GaN crystals from the vapor phase
Journal of Crystal Growth, 241(4), 404–415.
2002 journal article
Role of adsorbates in field emission from nanotubes
Diamond and Related Materials, 11(3-6), 769–773.
2002 journal article
Seeded growth of AlN bulk single crystals by sublimation
Journal of Crystal Growth, 241(4), 416–420.
2002 journal article
Study of fusion bonding of diamond to silicon for silicon-on- diamond technology
Applied Physics Letters, 81(17), 3275–3277.
2002 journal article
Synchrotron white beam topography characterization of physical vapor transport grown AlN and ammonothermal GaN
Journal of Crystal Growth, 246(3-4), 271–280.
2001 journal article
Angle-dependent reflectometry as a technique for fast assessment of highly oriented diamond film quality
Diamond and Related Materials, 10(11), 2092–2095.
2001 journal article
Frequency and duty cycle dependence on the pulsed bias-enhanced nucleation of highly oriented diamond on (100) silicon
Physica Status Solidi. A, Applications and Materials Science, 186(2), 331–337.
2001 journal article
Process optimization in the low-pressure flat flame growth of diamond
Diamond and Related Materials, 10(3-7), 289–294.
2001 journal article
Raman spectroscopic characterization of diamond films grown in a low-pressure flat flame
Journal of Crystal Growth, 226(1), 88–94.
2001 journal article
Two field-emission states of single-walled carbon nanotubes
Applied Physics Letters, 78(14), 2058–2060.
2000 journal article
Characterization of dielectrics on the 'tips of needles'
Electrochemistry, 30(4), 210–215.
2000 journal article
Energy distribution of field emitted electrons from carbon nanotubes
Diamond and Related Materials, 9(3-6), 1201–1204.
2000 journal article
Growth and characterization of GaN single crystals
Journal of Crystal Growth, 208(1-4), 100–106.
2000 journal article
Hot electron transport in AlN
Journal of Applied Physics, 88(10), 5865–5869.
1999 journal article
Effect of nitrogen incorporation on electron emission from chemical vapor deposited diamond
Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(2), 734–739.
1999 journal article
The influences of reactant composition and substrate material on the combustion synthesis of diamond
Journal of Materials Research, 14(1), 259–269.
1998 journal article
Coalesced oriented diamond films on nickel
Journal of Materials Research, 13(5), 1120–1123.
1998 journal article
Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy
Journal of Applied Physics, 84(9), 5238–5242.
1998 journal article
Electron emission mechanism from cubic boron nitride-coated molybdenum emitters
Applied Physics Letters, 72(22), 2909–2911.
1998 journal article
Electron energy distribution of diamond-coated field emitters
Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(2), 716–719.
1998 journal article
Field emission energy distribution analysis of cubic-BN-coated Mo emitters: Nonlinear behavior
Journal of Applied Physics, 84(6), 3382–3385.
1998 journal article
Field emission energy distribution analysis of wide-band-gap field emitters
Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(2), 689–692.
1998 journal article
Flat-flame diamond CVD: the effect of pressure and operating conditions for specific applications
Diamond and Related Materials, 7(2-5), 133–138.
1998 journal article
Heteroepitaxial nucleation of diamond on nickel
Diamond and Related Materials, 7(2-5), 276–282.
1998 journal article
Mechanisms of field emission from diamond coated Mo emitters
Diamond and Related Materials, 7(2-5), 636–639.
1998 journal article
Structural and electronic properties of boron nitride thin films containing silicon
Journal of Applied Physics, 84(9), 5046–5051.
1998 journal article
Surface melting in the heteroepitaxial nucleation of diamond on Ni
Journal of Crystal Growth, 187(1), 81–88.
1998 journal article
The influence of nitrogen addition on the morphology, growth rate, and Raman spectra of combustion grown diamond
Diamond and Related Materials, 7(8), 1178–1183.
1998 journal article
Transmission electron microscoanalysis of the oriented diamond growth on nickel substrates
Journal of Applied Physics, 83(12), 7658–7663.
1997 journal article
Control of diamond heteroepitaxy on nickel by optical reflectance
Applied Physics Letters, 70(22), 2960–2962.
1997 journal article
Dielectric, pyroelectric and structural properties of LiTaO3 thin films grown on silicon by a modified molecular beam epitaxy
Ferroelectrics, 201(1-4), 245–253.
1997 journal article
Electrical characterization of diamond and graphite coated Mo field emitters
Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(6), 2067–2071.
1997 journal article
Energy distribution of field emitted electrons from diamond coated molybdenum tips
Applied Physics Letters, 70(12), 1596–1598.
1997 journal article
Gas-source molecular beam epitaxy of III-V nitrides
Journal of Crystal Growth, 178(1/2), 87–101.
1997 journal article
Growth of AlN and GaN thin films via OMVPE and gas source MBE and their characterization
Solid-State Electronics, 41(2), 129–134.
1997 journal article
Highly oriented diamond deposited using a low pressure flat flame
Materials Letters, 32(1), 9–12.
1997 journal article
In situ mass spectrometry during diamond chemical vapor deposition using a low pressure flat flame
Journal of Materials Research, 12(10), 2733–2742.
1997 journal article
Low-temperature deposition of optically transparent diamond using a low-pressure flat flame
Diamond and Related Materials, 6(12), 1862–1867.
1997 journal article
Optical metastability in bulk GaN single crystals
Applied Physics Letters, 71(4), 455–457.
1997 journal article
Photoluminescence from mechanically milled Si and SiO(2) powders
Physical Review. B, Condensed Matter and Materials Physics, 55(12), 7615–7623.
1997 journal article
Sublimation growth and characterization of bulk aluminum nitride single crystals
Journal of Crystal Growth, 179(3-4), 363–370.
1996 conference paper
Growth of bulk AIN and GaN single crystals by sublimation
In III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449) (pp. 41–46). Pittsburgh, Pa.: Materials Research Society.
1989 journal article
Growth of cubic phase gallium nitride by modified molecular-beam epitaxy
Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 7(3), 701–705.
conference paper
Fabrication and characterization of lateral polar GaN structures for second harmonic generation
Hoffmann, M. P., Gerhold, M., Kirste, R., Rice, A., Akouala, C. R., Xie, J. Q. Q., … Sitar, Z. In Quantum sensing and nanophotonic devices x (Vol. 8631).
journal article
Field emission from carbon nanotubes
Collazo, R., Schlesser, R., & Sitar, Z. New Diamond and Frontier Carbon Technology, 13(5), 297–306.
journal article
Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes
Guo, W., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., Collazo, R., & Sitar, Z. Journal of Applied Physics, 117(11).
conference paper
On the origin of the 4.7 eV absorption and 2.8 eV emission bands in bulk AlN substrates
Alden, D., Bryan, Z., Gaddy, B. E., Bryan, I., Callsen, G., Koukitu, A., … Collazo, R. In Wide bandgap semiconductor materials and devices 17 (Vol. 72, pp. 31–40).
review
Ultrawide-bandgap semiconductors: Research opportunities and challenges
Tsao, J. Y., Chowdhury, S., Hollis, M. A., Jena, D., Johnson, N. M., Jones, K. A., … Grotjohn, T. A. Advanced Electronic Materials.