Zlatko Sitar

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

APPLIED PHYSICS LETTERS, 118(2).

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

APPLIED PHYSICS LETTERS, 118(11).

Native oxide reconstructions on AlN and GaN (0001) surfaces

JOURNAL OF APPLIED PHYSICS.

On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers

APPLIED PHYSICS LETTERS, 118(12).

Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

APPLIED PHYSICS LETTERS, 118(4).

Structural and optical properties of self-assembled AlN nanowires grown on SiO2/Si substrates by molecular beam epitaxy

NANOTECHNOLOGY, 32(19).

Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies

APPLIED PHYSICS LETTERS.

Weak localization and dimensional crossover in compositionally graded AlxGa1-xN

APPLIED PHYSICS LETTERS, 118(8).

Cathodoluminescence of silicon doped aluminum nitride with scanning transmission electron microscopy

APL MATERIALS, 8(9).

Complexes and compensation in degenerately donor doped GaN

APPLIED PHYSICS LETTERS, 117(10).

Hydride vapor phase epitaxy of Si -doped AlN layers using SiCl 4 as a doping gas

JOURNAL OF CRYSTAL GROWTH, 545.

Recovery kinetics in high temperature annealed AlN heteroepitaxial films

JOURNAL OF APPLIED PHYSICS, 127(11).

Strain Recovery and Defect Characterization in Mg-Implanted Homoepitaxial GaN on High-Quality GaN Substrates

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS.

Study of Dislocations in Homoepitaxially and Heteroepitaxially Grown AlN Layers

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE.

The 2020 UV emitter roadmap

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 53(50).

In-plane optical polarization and dynamic properties of the near-band-edge emission of an m-plane freestanding AlN substrate and a homoepitaxial film

APPLIED PHYSICS LETTERS, 115(15).

Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019)

JOURNAL OF CRYSTAL GROWTH, Vol. 514, pp. 13–13.

Multiple Epsilon-Near-Zero Resonances in Multilayered Cadmium Oxide: Designing Metamaterial-Like Optical Properties in Monolithic Materials

ACS PHOTONICS, 6(5), 1139–1145.

Oxygen and silicon point defects in Al0.65Ga0.35N

PHYSICAL REVIEW MATERIALS, 3(5).

Quasi-phase-matched second harmonic generation of UV light using AlN waveguides

APPLIED PHYSICS LETTERS, 114(10).

Structural characteristics of m-plane AlN substrates and homoepitaxial films

JOURNAL OF CRYSTAL GROWTH, 507, 389–394.

The polarization field in Al-rich AlGaN multiple quantum wells

JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 58.

The role of transient surface morphology on composition control in AlGaN layers and wells

APPLIED PHYSICS LETTERS, 114(3).

A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 124(11).

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

Applied Physics Letters, 112(6).

Improvement in detection limit for time-of-flight SIMS analysis of dopants in GaN structures

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 36(3).

Nitride surface chemistry influence on band offsets at epitaxial oxide/GaN interfaces

Applied Physics Letters, 112(9).

On Contacts to III-nitride deep-UV emitters

2018 3rd International Conference on Microwave and Photonics (ICMAP).

On Ni/Au Alloyed Contacts to Mg-Doped GaN

Journal of Electronic Materials, 47(1), 305–311.

On compensation in Si-doped AlN

Applied Physics Letters, 112(15).

Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(6).

Point-defect nature of the ultraviolet absorption band in AIN

Physical Review Applied, 9(5).

Probing collective oscillation of d-orbital electrons at the nanoscale

Applied Physics Letters, 112(6).

Structure of ultrathin native oxides on III-nitride surfaces

ACS Applied Materials & Interfaces, 10(13), 10607–10611.

The influence of point defects on the thermal conductivity of AlN crystals

Journal of Applied Physics, 123(18).

Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes

JOURNAL OF APPLIED PHYSICS, 124(10).

Thermal conductivity of single-crystalline AIN

Applied Physics Express, 11(7).

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

Advanced Electronic Materials, 4(1), 1600501.

Defect quasi Fermi level control-based C-N reduction in GaN: Evidence for the role of minority carriers

Applied Physics Letters, 111(15).

Defect-free Ni/GaN Schottky barrier behavior with high temperature stability

Applied Physics Letters, 110(1).

High free carrier concentration in p-GaN grown on AlN substrates

Applied Physics Letters, 111(3).

Material considerations for the development of III-nitride power devices

Gallium nitride and silicon carbide power technologies 7, 80(7), 29–36.

Model for the deep defect-related emission bands between 1.4 and 2.4 eV in AlN

Physica Status Solidi. B, Basic Solid State Physics, 254(8).

Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN

Japanese Journal of Applied Physics, 56(10).

Optical nonlinear and electro-optical coefficients in bulk aluminium nitride single crystals

Physica Status Solidi. B, Basic Solid State Physics, 254(9).

Optical signatures of silicon and oxygen related DX centers in AlN

Physica Status Solidi. A, Applications and Materials Science, 214(9).

Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatment

Applied Physics Express, 10(7).

Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN

Journal of Applied Physics, 122(24).

Slow decay of a defect-related emission band at 2.05eV in AlN: Signatures of oxygen-related DX states

Physica Status Solidi. B, Basic Solid State Physics, 254(5).

Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy

APL Materials, 5(9).

Structure and Chemistry of Oxide Surface Reconstructions in III-Nitrides Observed using STEM EELS

Microscopy and Microanalysis, 23(S1), 1444–1445.

Atomically thin MoS2 narrowband and broadband light superabsorbers

ACS Nano, 10(8), 7493–7499.

Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition

Journal of Applied Physics, 120(10).

Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications

Applied Physics Letters, 108(26).

High reflectivity III-nitride UV-C distributed Bragg reflectors for vertical cavity emitting lasers

Journal of Applied Physics, 120(13).

High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

Journal of Applied Physics, 119(14).

Influence of high-temperature processing on the surface properties of bulk AlN substrates

Journal of Crystal Growth, 446, 33–38.

Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control

Journal of Applied Physics, 120(18).

Polarity control in group-III nitrides beyond pragmatism

Physical Review Applied, 5(5).

Selective area epitaxy of magnesium oxide thin films on gallium nitride surfaces

Journal of Materials Research, 31(1), 36–45.

Strain engineered high reflectivity DBRs in the deep UV

Gallium nitride materials and devices xi, 9748.

Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides

Journal of Crystal Growth, 438, 81–89.

The Effect of illumination power density on carbon defect configuration in silicon doped gan

Journal of Applied Physics, 120(23).

The role of surface kinetics on composition and quality of AlGaN

Journal of Crystal Growth, 451, 65–71.

UV second harmonic generation in AlN waveguides with modal phase matching

Optical Materials Express, 6(6), 2014–2023.

Very slow decay of a defect related emission band at 2.4 eV in AlN: Signatures of the Si related shallow DX state

Journal of Applied Physics, 119(15).

A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN

Journal of Applied Physics, 117(24).

AlGaN devices and growth of device structures

[Review of ]. Journal of Materials Science, 50(9), 3267–3307.

Charge neutrality levels, barrier heights, and band offsets at polar AlGaN

Applied Physics Letters, 107(9).

Fabrication of vertical Schottky barrier diodes on n-type freestanding AIN substrates grown by hydride vapor phase epitaxy

Applied Physics Express, 8(6).

Growth and characterization of AlxGa1-xN lateral polarity structures

Physica Status Solidi. A, Applications and Materials Science, 212(5), 1039–1042.

High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

Applied Physics Letters, 106(14).

KOH based selective wet chemical etching of AlN, AlxGa1-xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode

Applied Physics Letters, 106(8).

Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes

Journal of Applied Physics, 117(11), 113107.

Optical characterization of Al- and N-polar AlN waveguides for integrated optics

Applied Physics Express, 8(4).

Optical properties of aluminum nitride single crystals in the THz region

Optical Materials Express, 5(10), 2106–2111.

Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates

Applied Physics Letters, 106(23).

Characterization of threading dislocations in pvt-grown aln substrates via x-ray topography and ray tracing simulation

Journal of Electronic Materials, 43(4), 838–842.

Dependence on pressure of the refractive indices of wurtzite ZnO, GaN, and AlN

Physical Review. B, Condensed Matter and Materials Physics, 90(4).

Direct Observation of the Polarity Control Mechanism in Aluminum Nitride Grown on Sapphire by Aberration Corrected Scanning Transmission Electron Microscopy

Microscopy and Microanalysis, 20(S3), 162–163.

Exciton transitions and oxygen as a donor in m-plane AlN homoepitaxial films

Journal of Applied Physics, 115(13).

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

Applied Physics Letters, 105(22).

HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties

Journal of Crystal Growth, 394, 55–60.

Homoepitaxial AlN thin films deposited on m-plane (1(1)over-bar00) AlN substrates by metalorganic chemical vapor deposition

Journal of Applied Physics, 116(13).

Phonon pressure coefficients and deformation potentials of wurtzite AlN determined by uniaxial pressure-dependent Raman measurements

Physical Review. B, Condensed Matter and Materials Physics, 90(20).

Polarity characterization by anomalous x-ray dispersion of ZnO films and GaN lateral polar structures

Journal of Applied Physics, 115(4).

Properties of AlN based lateral polarity structures

Physica status solidi c: current topics in solid state physics, vol 11, no 2, 11(2), 261–264.

Sapphire decomposition and inversion domains in N-polar aluminum nitride

Applied Physics Letters, 104(3).

Schottky contact formation on polar and non-polar AlN

Journal of Applied Physics, 116(19).

Smooth cubic commensurate oxides on gallium nitride

Journal of Applied Physics, 115(6).

Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

Journal of Applied Physics, 115(10).

Surface preparation of non-polar single-crystalline AlN substrates

Physica status solidi c: current topics in solid state physics, vol 11, no 3-4, 11(3-4), 454–457.

The effect of polarity and surface states on the Fermi level at III-nitride surfaces

Journal of Applied Physics, 116(12).

The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

Applied Physics Letters, 104(20).

Vacancy defects in UV-transparent HVPE-AlN

Physica Status Solidi (c), 11(3-4), 405–407.

Aqueous stability of Ga- and N-polar gallium nitride

Langmuir, 29(1), 216–220.

Cell behavior on gallium nitride surfaces: Peptide affinity attachment versus covalent functionalization

Langmuir, 29(26), 8377–8384.

Comparative study of etching high crystalline quality AlN and GaN

Journal of Crystal Growth, 366, 20–25.

Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements

Journal of Applied Physics, 113(10), 103504.

Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions

Applied Physics Letters, 103(12).

Epitaxial PbxZr1-xTiO3 on GaN

Journal of Applied Physics, 113(7).

Epitaxial lead zirconate titanate on gallium nitride (vol 113, 074107, 2013)

Journal of Applied Physics, Vol. 114.

Erratum: “Kinase detection with gallium nitride based high electron mobility transistors” [Appl. Phys. Lett. 103, 013701 (2013)]

Applied Physics Letters, 103(8), 089902.

Excitonic emission dynamics in homoepitaxial AlN films studied using polarized and spatio-time-resolved cathodoluminescence measurements

Applied Physics Letters, 103(14).

Fermi level control of point defects during growth of Mg-doped GaN

Journal of Electronic Materials, 42(5), 815–819.

Ge doped GaN with controllable high carrier concentration for plasmonic applications

Applied Physics Letters, 103(24).

Kinase detection with gallium nitride based high electron mobility transistors

Applied Physics Letters, 103(1), 013701.

Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures

Applied Physics Letters, 102(17).

Performance and reliability of deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy

Applied Physics Express, 6(9).

Physisorption of functionalized gold nanoparticles on AlGaN/GaN high electron mobility transistors for sensing applications

Applied Physics Letters, 102(7), 074102.

Polarity control and growth of lateral polarity structures in AlN

Applied Physics Letters, 102(18).

Polarity determination of polar and semipolar (112¯2) InN and GaN layers by valence band photoemission spectroscopy

Journal of Applied Physics, 114(17), 173503.

Preparation of free-standing GaN substrates from thick GaN layers crystallized by hydride vapor phase epitaxy on ammonothermally grown GaN seeds

Applied Physics Express, 6(7).

Publisher's Note: “Epitaxial lead zirconate titanate on gallium nitride” [J. Appl. Phys. 113, 074107 (2013)]

Journal of Applied Physics, 114(23), 239901.

Refractive index of III-metal-polar and N-polar AlGaN waveguides grown by metal organic chemical vapor deposition

Applied Physics Letters, 102(22).

Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition

Applied Physics Letters, 102(6).

Universal phonon mean free path spectra in crystalline semiconductors at high temperature

Scientific Reports, 3.

Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

Applied Physics Letters, 103(16).

X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN

Journal of Applied Physics, 113(12).

Deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy

Applied Physics Express, 5(12).

Gold Nanoparticles: Weakly Charged Cationic Nanoparticles Induce DNA Bending and Strand Separation (Adv. Mater. 31/2012)

Advanced Materials, 24(31), 4221–4221.

Lateral epitaxial overgrowth of nitrogen polar GaN on smooth nitrogen polar GaN templates by metalorganic chemical vapor deposition

Journal of Applied Physics, 112(11).

On the origin of the 265 nm absorption band in AlN bulk crystals

Applied Physics Letters, 100(19).

Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN

Physica Status Solidi. B, Basic Solid State Physics, 249(3), 511–515.

Optical signature of Mg-doped GaN: Transfer processes

Physical Review. B, Condensed Matter and Materials Physics, 86(7).

Optically pumped UV lasers grown on bulk AlN substrates

Physica Status Solidi (c), 9(3-4), 822–825.

Preparation of a freestanding AIN substrate from a thick AIN layer grown by hydride vapor phase epitaxy on a Bulk AIN substrate prepared by physical vapor transport

Applied Physics Express, 5(5).

Schottky barrier and interface chemistry for Ni contacted to Al0.8Ga0.2N grown on c-oriented AlN single crystal substrates

Physica status solidi c: current topics in solid state physics, vol 9, no 3-4, 9(3-4), 584–587.

Structural and optical properties of carbon-doped AlN substrates grown by hydride vapor phase epitaxy using AlN substrates prepared by physical vapor transport

Applied Physics Express, 5(12).

Surfactant assisted growth of MgO films on GaN

Applied Physics Letters, 101(9).

The 7th International Workshop on Bulk Nitride Semiconductors Koyasan, Wakayama, Japan 15-20 March 2011 Preface

Journal of Crystal Growth, 350(1), 1–1.

Weakly charged cationic nanoparticles induce DNA bending and strand separation

Advanced Materials, 24(31), 4261-.

265 nm light emitting diodes on AlN single crystal substrates: Growth and characterization

2011 Conference on Lasers and Electro-Optics (CLEO).

Characterization of dislocation arrays in AlN single crystals grown by PVT

Physica Status Solidi (a), 208(7), 1545–1547.

Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates

Journal of the Electrochemical Society, 158(5), H530–535.

Growth temperature and growth rate dependency on reactor pressure for InN epilayers grown by HPCVD

Physica Status Solidi (c), 8(7-8), 2059–2062.

Impact of gallium supersaturation on the growth of N-polar GaN

Physica Status Solidi (c), 8(7-8), 2078–2080.

Ni/Au Schottky diodes on AlxGa1-xN (0.7

Physica Status Solidi (c), 8(7-8), 2407–2409.

On the strain in n-type GaN

Applied Physics Letters, 99(14).

Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications

Physica status solidi c: current topics in solid state physics, vol 8, no 7-8, 8(7-8).

Sharp bound and free exciton lines from homoepitaxial AlN

Physica Status Solidi. A, Applications and Materials Science, 208(7), 1520–1522.

Spectroscopic measurements of the surface stoichiometry of chemical vapor deposited GaN

Applied Physics Letters, 98(8).

Strain in Si doped GaN and the Fermi level effect

Applied Physics Letters, 98(20).

Surfactant-enabled epitaxy through control of growth mode with chemical boundary conditions

Nature Communications, 2.

Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN

Journal of Applied Physics, 110(9), 093503.

Critical examination of growth rate for magnesium oxide (MgO) thin films deposited by molecular beam epitaxy with a molecular oxygen flux

Journal of Materials Research, 25(4), 670–679.

Free-standing lithium niobate microring resonators for hybrid integrated optics

IEEE Photonics Technology Letters, 22(4), 251–253.

Growth of AlN single crystalline boules

Journal of Crystal Growth, 312(18), 2519–2521.

Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity

Physica Status Solidi. A, Applications and Materials Science, 207(1), 45–48.

Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1-xN (0 <= x <= 1) deposition by LP OMVPE

Journal of Crystal Growth, 312(8), 1321–1324.