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2024 journal article
Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activation
JOURNAL OF APPLIED PHYSICS, 135(2).
Contributors: K. Huynh *, Y. Wang *, M. Liao *, J. Tweedie *, P. Reddy* , M. Breckenridge n, R. Collazo n , n
2024 journal article
Wafer-bonded In<sub>0.53</sub>Ga<sub>0.47</sub>As/GaN p-n diodes with near-unity ideality factor
APPLIED PHYSICS LETTERS, 125(6).
2023 article
Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing
Stein, S. R., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., Tweedie, J., … Pavlidis, S. (2023, December 12). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12.
Contributors: S. Stein n, D. Khachariya*, W. Mecouch*, S. Mita*, P. Reddy* , J. Tweedie*, K. Sierakowski *, G. Kamler *
2023 journal article
Anderson transition in compositionally graded p-AlGaN
JOURNAL OF APPLIED PHYSICS, 134(19).
Contributors: S. Rathkanthiwar n, P. Reddy* , C. Quiñones n, J. Loveless n, M. Kamiyama n, P. Bagheri n, D. Khachariya*, T. Eldred n
2023 article
Chemical Vapor Deposition of Monolayer MoS2 on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction Optoelectronics
Sengupta, R., Vaidya, S., Szymanski, D., Khachariya, D., Bockowski, M., Kamler, G., … Pavlidis, S. (2023, March 24). ACS APPLIED NANO MATERIALS, Vol. 3.
Contributors: R. Sengupta n, S. Vaidya n, D. Szymanski n, D. Khachariya*, M. Bockowski *, G. Kamler *, P. Reddy* , n, R. Collazo n , S. Pavlidis n
2023 journal article
Demonstration of near-ideal Schottky contacts to Si-doped AlN
APPLIED PHYSICS LETTERS, 123(17).
Contributors: C. Quiñones n, D. Khachariya*, P. Bagheri n, P. Reddy* , S. Mita*, R. Kirste*, S. Rathkanthiwar n, J. Tweedie*
2023 journal article
High conductivity in Ge-doped AlN achieved by a non-equilibrium process
APPLIED PHYSICS LETTERS, 122(14).
Contributors: P. Bagheri n, C. Quiñones-Garcia n , D. Khachariya*, J. Loveless n, Y. Guan n, S. Rathkanthiwar n, P. Reddy* , R. Kirste*
2023 journal article
High p-conductivity in AlGaN enabled by polarization field engineering
APPLIED PHYSICS LETTERS, 122(15).
Contributors: S. Rathkanthiwar n, P. Reddy* , B. Moody*, C. Quiñones-García n , P. Bagheri n, D. Khachariya*, R. Dalmau *, S. Mita*
2023 journal article
Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor
APPLIED PHYSICS EXPRESS, 16(3).
Contributors: S. Stein n, D. Khachariya*, S. Mita*, M. Breckenridge n, J. Tweedie*, P. Reddy* , K. Sierakowski *, G. Kamler *
2022 journal article
<p>The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN</p>
APPLIED PHYSICS LETTERS, 120(3).
Contributors: K. Wang n, R. Kirste n, S. Mita n, S. Washiyama n, W. Mecouch n, P. Reddy n , R. Collazo n , n
2022 article
Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates
Rathkanthiwar, S., Graziano, M. B., Tweedie, J., Mita, S., Kirste, R., Collazo, R., & Sitar, Z. (2022, October 25). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 10.
2022 journal article
Doping and compensation in heavily Mg doped Al-rich AlGaN films
APPLIED PHYSICS LETTERS, 120(8).
Contributors: P. Bagheri n, A. Klump n, S. Washiyama n, M. Hayden Breckenridge n, J. Kim n, Y. Guan n, D. Khachariya n, C. Quiñones-García n
2022 journal article
GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions
JOURNAL OF APPLIED PHYSICS, 131(1).
Contributors: D. Szymanski n, D. Khachariya n, T. Eldred n, P. Bagheri n, S. Washiyama n, A. Chang *, S. Pavlidis n, R. Kirste*
2022 journal article
High electron mobility in AlN:Si by point and extended defect management
JOURNAL OF APPLIED PHYSICS, 132(18).
Contributors: P. Bagheri n, C. Quiñones-Garcia n , D. Khachariya n, S. Rathkanthiwar n, P. Reddy n , R. Kirste n, S. Mita n, J. Tweedie n, R. Collazo n , n
2022 article
Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates
Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3.
Contributors: P. Reddy* , W. Mecouch*, M. Hayden Breckenridge n, D. Khachariya n, P. Bagheri n, J. Hyun Kim n, Y. Guan n, S. Mita*
2022 journal article
Low resistivity, p-type, N-Polar GaN achieved by chemical potential control
APPLIED PHYSICS EXPRESS, 15(8).
Contributors: S. Rathkanthiwar n, D. Szymanski n, D. Khachariya n, P. Bagheri n, J. Kim, S. Mita*, P. Reddy* , E. Kohn n
2022 journal article
On the conduction mechanism in compositionally graded AlGaN
APPLIED PHYSICS LETTERS, 121(7).
Contributors: S. Rathkanthiwar n, P. Bagheri n, D. Khachariya n, J. Kim n, Y. Kajikawa n, P. Reddy n , S. Mita n, R. Kirste n
2022 journal article
Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices
APPLIED PHYSICS EXPRESS, 15(5).
Contributors: S. Rathkanthiwar n, P. Bagheri n, D. Khachariya n, S. Mita*, S. Pavlidis n, P. Reddy* , R. Kirste*, J. Tweedie*, n, R. Collazo n
2022 journal article
Pseudomorphic growth of thick Al0.6Ga0.4N epilayers on AlN substrates
APPLIED PHYSICS LETTERS, 120(20).
2022 journal article
Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates
Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS, 120(17).
Contributors: D. Khachariya n, S. Mita*, P. Reddy* , S. Dangi n, J. Dycus*, P. Bagheri n, M. Breckenridge n, R. Sengupta n
2022 article
Spintronic Terahertz Emission in Ultrawide Bandgap Semiconductor/Ferromagnet Heterostructures
Comstock, A., Biliroglu, M., Seyitliyev, D., McConnell, A., Vetter, E., Reddy, P., … Sun, D. (2022, October 31). ADVANCED OPTICAL MATERIALS, Vol. 10.
Contributors: A. Comstock n, M. Biliroglu n, D. Seyitliyev n, A. McConnell n, E. Vetter n, P. Reddy* , R. Kirste*, D. Szymanski*
2022 article
Tracking of Point Defects in the Full Compositional Range of AlGaN via Photoluminescence Spectroscopy
Hyun Kim, J., Bagheri, P., Kirste, R., Reddy, P., Collazo, R., & Sitar, Z. (2022, December 9). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 12.
Contributors: J. Hyun Kim, P. Bagheri n, R. Kirste*, P. Reddy* , R. Collazo n & n
2022 journal article
Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing
APPLIED PHYSICS EXPRESS, 15(10).
Contributors: D. Khachariya*, S. Stein n, W. Mecouch*, M. Breckenridge n, S. Rathkanthiwar n, S. Mita*, B. Moody*, P. Reddy*
2021 journal article
A pathway to highly conducting Ge-doped AlGaN
JOURNAL OF APPLIED PHYSICS, 130(20).
Contributors: P. Bagheri n, J. Kim n, S. Washiyama n, P. Reddy* , A. Klump n, R. Kirste*, S. Mita*, R. Collazo n , n
2021 journal article
High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing
APPLIED PHYSICS LETTERS, 118(2).
Contributors: M. Breckenridge n, J. Tweedie n, P. Reddy n , Y. Guan n, P. Bagheri n, D. Szymanski n, S. Mita n, K. Sierakowski n
2021 journal article
High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN
APPLIED PHYSICS LETTERS, 118(11).
Contributors: M. Breckenridge n, P. Bagheri n, Q. Guo n, B. Sarkar n, D. Khachariya n, S. Pavlidis n, J. Tweedie*, R. Kirste*
2021 journal article
Native oxide reconstructions on AlN and GaN (0001) surfaces
JOURNAL OF APPLIED PHYSICS, 129(19).
Contributors: K. Mirrielees n, J. Dycus n, J. Baker n, P. Reddy* , R. Collazo n , n, J. Lebeau*, D. Irving n
2021 journal article
On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).
Contributors: A. Jadhav*, P. Bagheri n, A. Klump n, D. Khachariya n, S. Mita*, P. Reddy* , S. Rathkanthiwar n, R. Kirste*
2021 journal article
On the Ge shallow-to-deep level transition in Al-rich AlGaN
JOURNAL OF APPLIED PHYSICS, 130(5).
Contributors: P. Bagheri n, P. Reddy n , S. Mita n, D. Szymanski n, J. Kim n, Y. Guan n, D. Khachariya n, A. Klump n
2021 journal article
On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers
APPLIED PHYSICS LETTERS, 118(12).
Contributors: D. Khachariya n, D. Szymanski n, M. Breckenridge n, P. Reddy* , E. Kohn n, n, R. Collazo n , S. Pavlidis n
2021 journal article
Role of oxygen diffusion in the dislocation reduction of epitaxial AlN on sapphire during high-temperature annealing
JOURNAL OF APPLIED PHYSICS, 130(20).
2021 journal article
Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping
APPLIED PHYSICS LETTERS, 118(4).
Contributors: S. Washiyama n, K. Mirrielees n, P. Bagheri n, J. Baker n, J. Kim n, Q. Guo n, R. Kirste*, Y. Guan n
2021 article
Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength
Kirste, R., Sarkar, B., Reddy, P., Guo, Q., Collazo, R., & Sitar, Z. (2021, December 15). JOURNAL OF MATERIALS RESEARCH, Vol. 12.
Contributors: R. Kirste n, B. Sarkar n, P. Reddy n , Q. Guo n, R. Collazo n & n
2021 journal article
Structural and optical properties of self-assembled AlN nanowires grown on SiO2/Si substrates by molecular beam epitaxy
NANOTECHNOLOGY, 32(19).
2021 journal article
Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN
APPLIED PHYSICS LETTERS, 119(18).
Contributors: P. Reddy* , D. Khachariya n, W. Mecouch *, M. Breckenridge n, P. Bagheri n, Y. Guan n, J. Kim n, S. Pavlidis n
2021 journal article
Systematic oxygen impurity reduction in smooth N-polar GaN by chemical potential control
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).
Contributors: D. Szymanski*, K. Wang, F. Kaess*, R. Kirste*, S. Mita*, P. Reddy* , *, R. Collazo*
2021 journal article
Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies
APPLIED PHYSICS LETTERS, 119(2).
Contributors: J. Kim n, P. Bagheri n, S. Washiyama n, A. Klump n, R. Kirste*, S. Mita*, P. Reddy* , R. Collazo n , n
2021 journal article
Weak localization and dimensional crossover in compositionally graded AlxGa1-xN
APPLIED PHYSICS LETTERS, 118(8).
Contributors: A. Al-Tawhid n, A. Shafe n, P. Bagheri n, Y. Guan n, P. Reddy* , S. Mita*, B. Moody*, R. Collazo n , n, K. Ahadi n
2020 journal article
Cathodoluminescence of silicon doped aluminum nitride with scanning transmission electron microscopy
APL MATERIALS, 8(9).
2020 journal article
Complexes and compensation in degenerately donor doped GaN
APPLIED PHYSICS LETTERS, 117(10).
2020 journal article
Hydride vapor phase epitaxy of Si -doped AlN layers using SiCl 4 as a doping gas
JOURNAL OF CRYSTAL GROWTH, 545.
2020 journal article
Recovery kinetics in high temperature annealed AlN heteroepitaxial films
JOURNAL OF APPLIED PHYSICS, 127(11).
2020 journal article
Strain Recovery and Defect Characterization in Mg-Implanted Homoepitaxial GaN on High-Quality GaN Substrates
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 257(4).
2020 journal article
Study of Dislocations in Homoepitaxially and Heteroepitaxially Grown AlN Layers
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 217(24).
2020 journal article
The 2020 UV emitter roadmap
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 53(50).
Contributors: H. Amano *, R. Collazo n , C. De Santi *, S. Einfeldt *, M. Funato *, J. Glaab *, S. Hagedorn *, A. Hirano
2019 journal article
In-plane optical polarization and dynamic properties of the near-band-edge emission of an m-plane freestanding AlN substrate and a homoepitaxial film
APPLIED PHYSICS LETTERS, 115(15).
2019 article
Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019)
Liu, Z., Nitta, S., Robin, Y., Kushimoto, M., Deki, M., Honda, Y., … Amano, H. (2019, May 15). JOURNAL OF CRYSTAL GROWTH, Vol. 514, pp. 13–13.
2019 journal article
Multiple Epsilon-Near-Zero Resonances in Multilayered Cadmium Oxide: Designing Metamaterial-Like Optical Properties in Monolithic Materials
ACS PHOTONICS, 6(5), 1139–1145.
2019 journal article
Oxygen and silicon point defects in Al0.65Ga0.35N
PHYSICAL REVIEW MATERIALS, 3(5).
2019 journal article
Quasi-phase-matched second harmonic generation of UV light using AlN waveguides
APPLIED PHYSICS LETTERS, 114(10).
2019 journal article
Structural characteristics of m-plane AlN substrates and homoepitaxial films
JOURNAL OF CRYSTAL GROWTH, 507, 389–394.
2019 article
The polarization field in Al-rich AlGaN multiple quantum wells
Guo, Q., Kirste, R., Mita, S., Tweedie, J., Reddy, P., Washiyama, S., … Sitar, Z. (2019, June 1). JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 58.
Contributors: Q. Guo n, R. Kirste n, S. Mita n, J. Tweedie n, P. Reddy n , S. Washiyama n, M. Breckenridge n, R. Collazo n , n
2019 journal article
The role of transient surface morphology on composition control in AlGaN layers and wells
APPLIED PHYSICS LETTERS, 114(3).
2018 journal article
A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition
JOURNAL OF APPLIED PHYSICS, 124(11).
Contributors: S. Washiyama n, P. Reddy* , F. Kaess n, R. Kirste*, S. Mita*, R. Collazo n , n
2018 journal article
Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD
APPLIED PHYSICS LETTERS, 112(6).
Contributors: I. Bryan n, Z. Bryan n, S. Washiyama n, P. Reddy* , B. Gaddy n, B. Sarkar n, M. Breckenridge n, Q. Guo n
2018 journal article
Improvement in detection limit for time-of-flight SIMS analysis of dopants in GaN structures
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 36(3).
2018 journal article
Nitride surface chemistry influence on band offsets at epitaxial oxide/GaN interfaces
APPLIED PHYSICS LETTERS, 112(9).
2018 conference paper
On Contacts to III-nitride deep-UV emitters
2018 3rd International Conference on Microwave and Photonics (ICMAP), 2018-January, 1–2.
Contributors: B. Sarkar n, P. Reddy* , A. Klump n, R. Rounds n, M. Breckenridge n, B. Haidet n, S. Mita, R. Kirste, R. Collazo n , n
2018 journal article
On compensation in Si-doped AlN
APPLIED PHYSICS LETTERS, 112(15).
Contributors: J. Harris n, J. Baker n, B. Gaddy n, I. Bryan n, Z. Bryan n, K. Mirrielees n, P. Reddy* , R. Collazo n , n, D. Irving n
2018 journal article
Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(6).
Contributors: P. Reddy n , S. Washiyama n, W. Mecouch n, L. Hernandez-Balderrama n, F. Kaess n, M. Hayden Breckenridge n, B. Sarkar n, B. Haidet n
2018 journal article
Point-Defect Nature of the Ultraviolet Absorption Band in AIN
PHYSICAL REVIEW APPLIED, 9(5).
Contributors: D. Alden n, J. Harris n, Z. Bryan n, J. Baker n, P. Reddy n , S. Mita *, G. Callsen *, A. Hoffmann *
2018 journal article
Probing collective oscillation ofd-orbital electrons at the nanoscale
Applied Physics Letters, 112(6), 061102.
2018 journal article
Structure of Ultrathin Native Oxides on III-Nitride Surfaces
ACS APPLIED MATERIALS & INTERFACES, 10(13), 10607–10611.
2018 journal article
The influence of point defects on the thermal conductivity of AlN crystals
JOURNAL OF APPLIED PHYSICS, 123(18).
2018 journal article
Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes
JOURNAL OF APPLIED PHYSICS, 124(10).
2018 journal article
Thermal conductivity of single-crystalline AIN
APPLIED PHYSICS EXPRESS, 11(7).
2017 article
(Invited) Material Considerations for the Development of III-nitride Power Devices
GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 7, Vol. 80, pp. 29–36.
Contributors: B. Sarkar n, P. Reddy n , F. Kaess n, B. Haidet n, J. Tweedie*, S. Mita*, R. Kirste*, E. Kohn n, R. Collazo n , n
2017 journal article
Defect quasi Fermi level control-based C-N reduction in GaN: Evidence for the role of minority carriers
APPLIED PHYSICS LETTERS, 111(15).
Contributors: P. Reddy n , F. Kaess n, J. Tweedie*, R. Kirste*, S. Mita*, R. Collazo n , n
2017 journal article
Defect-free Ni/GaN Schottky barrier behavior with high temperature stability
APPLIED PHYSICS LETTERS, 110(1).
Contributors: P. Reddy n , B. Sarkar n, F. Kaess n, M. Gerhold*, E. Kohn n, R. Collazo n , n
2017 journal article
High free carrier concentration in p-GaN grown on AlN substrates
APPLIED PHYSICS LETTERS, 111(3).
2017 article
Model for the deep defect-related emission bands between 1.4 and 2.4 eV in AlN
Lamprecht, M., Jmerik, V. N., Collazo, R., Sitar, Z., Ivanov, S. V., & Thonke, K. (2017, August). PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 254.
2017 journal article
Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN
JAPANESE JOURNAL OF APPLIED PHYSICS, 56(10).
Contributors: B. Haidet n, B. Sarkar n, P. Reddy n , I. Bryan n, Z. Bryan n, R. Kirste *, R. Collazo n , n
2017 journal article
On Ni/Au Alloyed Contacts to Mg-Doped GaN
Journal of Electronic Materials, 47(1), 305–311.
Contributors: B. Sarkar n, P. Reddy n , A. Klump n, F. Kaess n, R. Rounds n, R. Kirste n, S. Mita n, E. Kohn n, R. Collazo n , n
2017 journal article
Optical nonlinear and electro-optical coefficients in bulk aluminium nitride single crystals
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 254(9).
2017 journal article
Optical signatures of silicon and oxygen related DX centers in AlN
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 214(9).
2017 journal article
Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatment
APPLIED PHYSICS EXPRESS, 10(7).
Contributors: B. Sarkar n, B. Haidet n, P. Reddy n , R. Kirste n, R. Collazo n & n
2017 journal article
Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN
Journal of Applied Physics, 122(24), 245702.
Contributors: P. Reddy n , S. Washiyama n, F. Kaess n, R. Kirste n, S. Mita n, R. Collazo n , n
2017 journal article
Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy
APL MATERIALS, 5(9).
2017 journal article
Structure and Chemistry of Oxide Surface Reconstructions in III-Nitrides Observed using STEM EELS
Microscopy and Microanalysis, 23(S1), 1444–1445.
2017 journal article
Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges
Advanced Electronic Materials, 4(1), 1600501.
2016 journal article
Atomically Thin MoS2 Narrowband and Broadband Light Superabsorbers
ACS NANO, 10(8), 7493–7499.
Contributors: L. Huang n, G. Li n, A. Gurarslan n, Y. Yu n, R. Kirste n, W. Guo n, J. Zhao n, R. Collazo n
2016 journal article
Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition
JOURNAL OF APPLIED PHYSICS, 120(10).
2016 journal article
Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications
APPLIED PHYSICS LETTERS, 108(26).
Contributors: D. Alden n, W. Guo n, R. Kirste n, F. Kaess n, I. Bryan n, T. Troha n, A. Bagal n, P. Reddy n
2016 journal article
High reflectivity III-nitride UV-C distributed Bragg reflectors for vertical cavity emitting lasers
JOURNAL OF APPLIED PHYSICS, 120(13).
2016 journal article
High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies
JOURNAL OF APPLIED PHYSICS, 119(14).
Contributors: P. Reddy n , S. Washiyama n, F. Kaess n, M. Hayden Breckenridge n, L. Hernandez-Balderrama n, B. Haidet n, D. Alden n, A. Franke
2016 journal article
Influence of high-temperature processing on the surface properties of bulk AlN substrates
JOURNAL OF CRYSTAL GROWTH, 446, 33–38.
2016 journal article
Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control
JOURNAL OF APPLIED PHYSICS, 120(18).
Contributors: P. Reddy n , M. Hoffmann n, F. Kaess n, Z. Bryan n, I. Bryan n, M. Bobea n, A. Klump n, J. Tweedie n
2016 journal article
Polarity Control in Group-III Nitrides beyond Pragmatism
PHYSICAL REVIEW APPLIED, 5(5).
2016 journal article
Slow decay of a defect-related emission band at 2.05eV in AlN: Signatures of oxygen-related DX states
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 254(5).
2016 article
Strain engineered high reflectivity DBRs in the deep UV
GALLIUM NITRIDE MATERIALS AND DEVICES XI, Vol. 9748.
2016 journal article
Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides
JOURNAL OF CRYSTAL GROWTH, 438, 81–89.
2016 journal article
The effect of illumination power density on carbon defect configuration in silicon doped GaN
JOURNAL OF APPLIED PHYSICS, 120(23).
Contributors: F. Kaess n, P. Reddy n , D. Alden n, A. Klump n, L. Hernandez-Balderrama n, A. Franke, R. Kirste *, A. Hoffmann *, R. Collazo n , n
2016 journal article
The role of surface kinetics on composition and quality of AlGaN
JOURNAL OF CRYSTAL GROWTH, 451, 65–71.
2016 journal article
UV second harmonic generation in AlN waveguides with modal phase matching
OPTICAL MATERIALS EXPRESS, 6(6), 2014–2023.
2016 journal article
Very slow decay of a defect related emission band at 2.4 eV in AlN: Signatures of the Si related shallow DX state
JOURNAL OF APPLIED PHYSICS, 119(15).
2015 journal article
A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN
JOURNAL OF APPLIED PHYSICS, 117(24).
Contributors: B. Haidet n, I. Bryan n, P. Reddy n , Z. Bryan n, R. Collazo n & n
2015 review
AlGaN devices and growth of device structures
[Review of ]. JOURNAL OF MATERIALS SCIENCE, 50(9), 3267–3307.
2015 journal article
Charge neutrality levels, barrier heights, and band offsets at polar AlGaN
APPLIED PHYSICS LETTERS, 107(9).
Contributors: P. Reddy n , I. Bryan n, Z. Bryan n, J. Tweedie, S. Washiyama n, R. Kirste n, S. Mita *, R. Collazo n , n
2015 journal article
Fabrication of vertical Schottky barrier diodes on n-type freestanding AIN substrates grown by hydride vapor phase epitaxy
APPLIED PHYSICS EXPRESS, 8(6).
2015 journal article
High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates
APPLIED PHYSICS LETTERS, 106(14).
2015 journal article
KOH based selective wet chemical etching of AlN, AlxGa1-xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode
APPLIED PHYSICS LETTERS, 106(8).
2015 journal article
Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes
Journal of Applied Physics, 117(11), 113107.
2015 journal article
Optical characterization of Al- and N-polar AlN waveguides for integrated optics
APPLIED PHYSICS EXPRESS, 8(4).
2015 journal article
Optical properties of aluminum nitride single crystals in the THz region
OPTICAL MATERIALS EXPRESS, 5(10), 2106–2111.
2015 journal article
Selective area epitaxy of magnesium oxide thin films on gallium nitride surfaces
JOURNAL OF MATERIALS RESEARCH, 31(1), 36–45.
2015 journal article
Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates
APPLIED PHYSICS LETTERS, 106(23).
2014 journal article
Characterization of Threading Dislocations in PVT-Grown AlN Substrates via x-Ray Topography and Ray Tracing Simulation
JOURNAL OF ELECTRONIC MATERIALS, 43(4), 838–842.
2014 journal article
Dependence on pressure of the refractive indices of wurtzite ZnO, GaN, and AlN
PHYSICAL REVIEW B, 90(4).
2014 journal article
Direct Observation of the Polarity Control Mechanism in Aluminum Nitride Grown on Sapphire by Aberration Corrected Scanning Transmission Electron Microscopy
Microscopy and Microanalysis, 20(S3), 162–163.
2014 journal article
Exciton transitions and oxygen as a donor in m-plane AlN homoepitaxial films
JOURNAL OF APPLIED PHYSICS, 115(13).
2014 journal article
Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN
APPLIED PHYSICS LETTERS, 105(22).
2014 article
Growth and characterization of AlxGa1-xN lateral polarity structures
Hoffmann, M. P., Kirste, R., Mita, S., Guo, W., Tweedie, J., Bobea, M., … Sitar, Z. (2015, May). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, pp. 1039–1042.
2014 journal article
HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties
JOURNAL OF CRYSTAL GROWTH, 394, 55–60.
2014 journal article
Homoepitaxial AlN thin films deposited on m-plane (1(1)over-bar00) AlN substrates by metalorganic chemical vapor deposition
JOURNAL OF APPLIED PHYSICS, 116(13).
2014 journal article
Phonon pressure coefficients and deformation potentials of wurtzite AlN determined by uniaxial pressure-dependent Raman measurements
PHYSICAL REVIEW B, 90(20).
2014 journal article
Polarity characterization by anomalous x-ray dispersion of ZnO films and GaN lateral polar structures
JOURNAL OF APPLIED PHYSICS, 115(4).
2014 article
Properties of AlN based lateral polarity structures
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 2, Vol. 11, pp. 261–264.
2014 journal article
Sapphire decomposition and inversion domains in N-polar aluminum nitride
APPLIED PHYSICS LETTERS, 104(3).
2014 journal article
Schottky contact formation on polar and non-polar AlN
JOURNAL OF APPLIED PHYSICS, 116(19).
Contributors: P. Reddy n , I. Bryan n, Z. Bryan n, J. Tweedie n, R. Kirste n, R. Collazo n , n
2014 journal article
Smooth cubic commensurate oxides on gallium nitride
JOURNAL OF APPLIED PHYSICS, 115(6).
2014 journal article
Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates
JOURNAL OF APPLIED PHYSICS, 115(10).
2014 article
Surface preparation of non-polar single-crystalline AlN substrates
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, Vol. 11, pp. 454–457.
2014 journal article
The effect of polarity and surface states on the Fermi level at III-nitride surfaces
JOURNAL OF APPLIED PHYSICS, 116(12).
2014 journal article
The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN
APPLIED PHYSICS LETTERS, 104(20).
2014 journal article
Vacancy defects in UV-transparent HVPE-AlN
Physica Status Solidi (c), 11(3-4), 405–407.
2013 journal article
Cell Behavior on Gallium Nitride Surfaces: Peptide Affinity Attachment versus Covalent Functionalization
LANGMUIR, 29(26), 8377–8384.
2013 journal article
Comparative study of etching high crystalline quality AlN and GaN
JOURNAL OF CRYSTAL GROWTH, 366, 20–25.
2013 journal article
Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements
Journal of Applied Physics, 113(10), 103504.