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Works (64)
2026 article
Elimination of wing tilt laterally overgrown GaN
Almeter, J., Mita, S., Dycus, J. H., Collazo, R., Sitar, Z., & Kirste, R. (2026, January 5). Applied Physics Letters.
2025 article
Experimental Characterization of Impact Ionization and Projection of Critical Electric Fields in High‐Al Content AlGaN
Zhu, Z., Reddy, P., Satapathy, Y., Cao, L., Xiong, J., Gutierrez, M., … Fay, P. (2025, June 24). Physica Status Solidi (a), Vol. 6.
open access via onlinelibrary.wiley.com (publisher PDF)2025 article
Mg-annealed anode contacts to reduce the on-resistance of GaN pn diodes formed via Mg implantation and ultra-high pressure annealing
Hasan, M. A., Alessi, M., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., … Pavlidis, S. (2025, August 15). Applied Physics Express, Vol. 18.
2024 article
High-current, high-voltage AlN Schottky barrier diodes
Quiñones, C. E., Khachariya, D., Reddy, P., Mita, S., Almeter, J., Bagheri, P., … Sitar, Z. (2024, September 30). Applied Physics Express, Vol. 17.
2024 article
Wafer-bonded In0.53Ga0.47As/GaN p–n diodes with near-unity ideality factor
Sengupta, R., Little, B., Mita, S., Markham, K., Dycus, J. H., Stein, S., … Pavlidis, S. (2024, August 5). Applied Physics Letters.
2023 article
Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing
Stein, S. R., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., Tweedie, J., … Pavlidis, S. (2023, December 12). IEEE Transactions on Electron Devices, Vol. 12, pp. 1494–1501.
Contributors: S. Stein n, D. Khachariya*, W. Mecouch*, *, P. Reddy* , J. Tweedie*, K. Sierakowski *, G. Kamler *
2023 article
Anderson transition in compositionally graded p-AlGaN
Rathkanthiwar, S., Reddy, P., Quiñones, C. E., Loveless, J., Kamiyama, M., Bagheri, P., … Sitar, Z. (2023, November 15). Journal of Applied Physics, Vol. 134.
Contributors: S. Rathkanthiwar n, P. Reddy* , C. Quiñones n , J. Loveless n, M. Kamiyama n , P. Bagheri n, D. Khachariya*, T. Eldred n
2023 article
Demonstration of near-ideal Schottky contacts to Si-doped AlN
Quiñones, C. E., Khachariya, D., Bagheri, P., Reddy, P., Mita, S., Kirste, R., … Sitar, Z. (2023, October 23). Applied Physics Letters, Vol. 123.
Contributors: C. Quiñones n , D. Khachariya*, P. Bagheri n, P. Reddy* , *, R. Kirste*, S. Rathkanthiwar n, J. Tweedie*
2023 article
High conductivity in Ge-doped AlN achieved by a non-equilibrium process
Bagheri, P., Quiñones-Garcia, C., Khachariya, D., Loveless, J., Guan, Y., Rathkanthiwar, S., … Sitar, Z. (2023, April 3). Applied Physics Letters, Vol. 122.
Contributors: P. Bagheri n, C. Quiñones-Garcia n , D. Khachariya*, J. Loveless n, Y. Guan n, S. Rathkanthiwar n, P. Reddy* , R. Kirste*
2023 article
High p-conductivity in AlGaN enabled by polarization field engineering
Rathkanthiwar, S., Reddy, P., Moody, B., Quiñones-García, C., Bagheri, P., Khachariya, D., … Sitar, Z. (2023, April 10). Applied Physics Letters, Vol. 122.
Contributors: S. Rathkanthiwar n, P. Reddy* , B. Moody*, C. Quiñones-García n , P. Bagheri n, D. Khachariya*, R. Dalmau *, *
2023 article
Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor
Stein, S. R., Khachariya, D., Mita, S., Breckenridge, M. H., Tweedie, J., Reddy, P., … Pavlidis, S. (2023, March 1). Applied Physics Express, Vol. 16.
Contributors: S. Stein n, D. Khachariya*, *, M. Breckenridge n, J. Tweedie*, P. Reddy* , K. Sierakowski *, G. Kamler *
2022 article
Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates
Rathkanthiwar, S., Graziano, M. B., Tweedie, J., Mita, S., Kirste, R., Collazo, R., & Sitar, Z. (2022, October 14). Physica Status Solidi (RRL) - Rapid Research Letters, Vol. 10.
2022 article
Doping and compensation in heavily Mg doped Al-rich AlGaN films
Bagheri, P., Klump, A., Washiyama, S., Breckenridge, M. H., Kim, J. H., Guan, Y., … Sitar, Z. (2022, February 21). Applied Physics Letters, Vol. 2.
Contributors: P. Bagheri n, A. Klump n, S. Washiyama n, M. Breckenridge n, J. Kim n, Y. Guan n, D. Khachariya n, C. Quiñones-García n
2022 article
High electron mobility in AlN:Si by point and extended defect management
Bagheri, P., Quiñones-Garcia, C., Khachariya, D., Rathkanthiwar, S., Reddy, P., Kirste, R., … Sitar, Z. (2022, November 9). Journal of Applied Physics, Vol. 11.
Contributors: P. Bagheri n, C. Quiñones-Garcia n , D. Khachariya n, S. Rathkanthiwar n, P. Reddy n , R. Kirste n, n, J. Tweedie n, R. Collazo n , Z. Sitar n
2022 article
Large‐Area, Solar‐Blind, Sub‐250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates
Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, February 19). Physica Status Solidi (RRL) - Rapid Research Letters, Vol. 3, p. 2100619.
Contributors: P. Reddy* , W. Mecouch*, M. Breckenridge n, D. Khachariya n, P. Bagheri n, J. Kim n, Y. Guan n, *
2022 article
Low resistivity, p-type, N-Polar GaN achieved by chemical potential control
Rathkanthiwar, S., Szymanski, D., Khachariya, D., Bagheri, P., Kim, J. H., Mita, S., … Sitar, Z. (2022, July 19). Applied Physics Express, Vol. 8.
Contributors: S. Rathkanthiwar n, D. Szymanski n, D. Khachariya n, P. Bagheri n, J. Kim n, *, P. Reddy* , E. Kohn n
2022 article
Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices
Rathkanthiwar, S., Bagheri, P., Khachariya, D., Mita, S., Pavlidis, S., Reddy, P., … Collazo, R. (2022, April 7). Applied Physics Express, Vol. 5.
Contributors: S. Rathkanthiwar n, P. Bagheri n, D. Khachariya n, *, S. Pavlidis n, P. Reddy* , R. Kirste*, J. Tweedie*, Z. Sitar n, R. Collazo n
2022 article
Pseudomorphic growth of thick Al0.6Ga0.4N epilayers on AlN substrates
Rathkanthiwar, S., Dycus, J. H., Mita, S., Kirste, R., Tweedie, J., Collazo, R., & Sitar, Z. (2022, May 16). Applied Physics Letters, Vol. 5.
2022 article
Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates
Khachariya, D., Mita, S., Reddy, P., Dangi, S., Dycus, J. H., Bagheri, P., … Pavlidis, S. (2022, April 25). Applied Physics Letters, Vol. 4.
Contributors: D. Khachariya n, *, P. Reddy* , S. Dangi n, J. Dycus*, P. Bagheri n, M. Breckenridge n, R. Sengupta n
2022 article
The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN
Wang, K., Kirste, R., Mita, S., Washiyama, S., Mecouch, W., Reddy, P., … Sitar, Z. (2022, January 17). Applied Physics Letters, Vol. 1.
Contributors: K. Wang n, R. Kirste n, n, S. Washiyama n, W. Mecouch n, P. Reddy n , R. Collazo n , Z. Sitar n
2022 article
Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing
Khachariya, D., Stein, S., Mecouch, W., Breckenridge, M. H., Rathkanthiwar, S., Mita, S., … Sitar, Z. (2022, September 5). Applied Physics Express, Vol. 10.
Contributors: D. Khachariya*, S. Stein n, W. Mecouch*, M. Breckenridge n, S. Rathkanthiwar n, *, B. Moody*, P. Reddy*
2021 article
A pathway to highly conducting Ge-doped AlGaN
Bagheri, P., Kim, J. H., Washiyama, S., Reddy, P., Klump, A., Kirste, R., … Sitar, Z. (2021, November 22). Journal of Applied Physics, Vol. 11.
Contributors: P. Bagheri n, J. Kim n, S. Washiyama n, P. Reddy* , A. Klump n, R. Kirste*, *, R. Collazo n , Z. Sitar n
2021 article
High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN
Breckenridge, M. H., Bagheri, P., Guo, Q., Sarkar, B., Khachariya, D., Pavlidis, S., … Sitar, Z. (2021, March 15). Applied Physics Letters, Vol. 118.
Contributors: M. Breckenridge n, P. Bagheri n, Q. Guo n, B. Sarkar n, D. Khachariya n, S. Pavlidis n, J. Tweedie*, R. Kirste*
2021 article
High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing
Breckenridge, M. H., Tweedie, J., Reddy, P., Guan, Y., Bagheri, P., Szymanski, D., … Sitar, Z. (2021, January 11). Applied Physics Letters, Vol. 118, p. 022101.
Contributors: M. Breckenridge n, J. Tweedie n, P. Reddy n , Y. Guan n, P. Bagheri n, D. Szymanski n, n, K. Sierakowski n
2021 article
On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters
Jadhav, A., Bagheri, P., Klump, A., Khachariya, D., Mita, S., Reddy, P., … Sarkar, B. (2021, November 5). Semiconductor Science and Technology, Vol. 1.
Contributors: A. Jadhav*, P. Bagheri n, A. Klump n, D. Khachariya n, *, P. Reddy* , S. Rathkanthiwar n, R. Kirste*
2021 article
On the Ge shallow-to-deep level transition in Al-rich AlGaN
Bagheri, P., Reddy, P., Mita, S., Szymanski, D., Kim, J. H., Guan, Y., … Sitar, Z. (2021, August 3). Journal of Applied Physics, Vol. 8.
Contributors: P. Bagheri n, P. Reddy n , n, D. Szymanski n, J. Kim n, Y. Guan n, D. Khachariya n, A. Klump n
2021 article
Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping
Washiyama, S., Mirrielees, K. J., Bagheri, P., Baker, J. N., Kim, J.-H., Guo, Q., … Sitar, Z. (2021, January 25). Applied Physics Letters, Vol. 118.
Contributors: S. Washiyama n, K. Mirrielees n, P. Bagheri n, J. Baker n, J. Kim n, Q. Guo n, R. Kirste*, Y. Guan n
2021 article
Study on avalanche breakdown and Poole–Frenkel emission in Al-rich AlGaN grown on single crystal AlN
Reddy, P., Khachariya, D., Mecouch, W., Breckenridge, M. H., Bagheri, P., Guan, Y., … Sitar, Z. (2021, November 1). Applied Physics Letters, Vol. 11.
Contributors: P. Reddy* , D. Khachariya n, W. Mecouch *, M. Breckenridge n, P. Bagheri n, Y. Guan n, J. Kim n, S. Pavlidis n
2021 article
Systematic oxygen impurity reduction in smooth N-polar GaN by chemical potential control
Szymanski, D., Wang, K., Kaess, F., Kirste, R., Mita, S., Reddy, P., … Collazo, R. (2021, November 3). Semiconductor Science and Technology, Vol. 37.
Contributors: D. Szymanski*, K. Wang, F. Kaess*, R. Kirste*, *, P. Reddy* , Z. Sitar*, R. Collazo*
2021 article
Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies
Kim, J. H., Bagheri, P., Washiyama, S., Klump, A., Kirste, R., Mita, S., … Sitar, Z. (2021, July 12). Applied Physics Letters, Vol. 7.
Contributors: J. Kim n, P. Bagheri n, S. Washiyama n, A. Klump n, R. Kirste*, *, P. Reddy* , R. Collazo n , Z. Sitar n
2021 article
Weak localization and dimensional crossover in compositionally graded AlxGa1−xN
Al-Tawhid, A., Shafe, A.-A., Bagheri, P., Guan, Y., Reddy, P., Mita, S., … Ahadi, K. (2021, February 22). Applied Physics Letters, Vol. 118, p. 082101.
Contributors: A. Al-Tawhid n, A. Shafe n, P. Bagheri n, Y. Guan n, P. Reddy* , *, B. Moody*, R. Collazo n , Z. Sitar n, K. Ahadi n
2020 article
Cathodoluminescence of silicon doped aluminum nitride with scanning transmission electron microscopy
Hauwiller, M. R., Stowe, D., Eldred, T. B., Mita, S., Collazo, R., Sitar, Z., & LeBeau, J. (2020, September 1). APL Materials, Vol. 8.
2020 article
Recovery kinetics in high temperature annealed AlN heteroepitaxial films
Washiyama, S., Guan, Y., Mita, S., Collazo, R., & Sitar, Z. (2020, March 17). Journal of Applied Physics, Vol. 127.
2019 article
Quasi-phase-matched second harmonic generation of UV light using AlN waveguides
Alden, D., Troha, T., Kirste, R., Mita, S., Guo, Q., Hoffmann, A., … Sitar, Z. (2019, March 11). Applied Physics Letters, Vol. 114.
2019 article
The polarization field in Al-rich AlGaN multiple quantum wells
Guo, Q., Kirste, R., Mita, S., Tweedie, J., Reddy, P., Washiyama, S., … Sitar, Z. (2019, May 9). Japanese Journal of Applied Physics, Vol. 58.
Contributors: Q. Guo n, R. Kirste n, n, J. Tweedie n, P. Reddy n , S. Washiyama n, M. Breckenridge n, R. Collazo n , Z. Sitar n
2019 article
The role of transient surface morphology on composition control in AlGaN layers and wells
Dycus, J. H., Washiyama, S., Eldred, T. B., Guan, Y., Kirste, R., Mita, S., … LeBeau, J. M. (2019, January 21). Applied Physics Letters, Vol. 114.
2018 article
A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition
Washiyama, S., Reddy, P., Kaess, F., Kirste, R., Mita, S., Collazo, R., & Sitar, Z. (2018, September 18). Journal of Applied Physics, Vol. 124.
Contributors: S. Washiyama n, P. Reddy* , F. Kaess n, R. Kirste*, *, R. Collazo n , Z. Sitar n
2018 article
Structure of Ultrathin Native Oxides on III–Nitride Surfaces
Dycus, J. H., Mirrielees, K. J., Grimley, E. D., Kirste, R., Mita, S., Sitar, Z., … LeBeau, J. M. (2018, March 20). ACS Applied Materials & Interfaces, Vol. 10, pp. 10607–10611.
2017 article
(Invited) Material Considerations for the Development of III-Nitride Power Devices
Sarkar, B., Reddy, P., Kaess, F., Haidet, B. B., Tweedie, J., Mita, S., … al. (2017, August 17). ECS Transactions, Vol. 80, pp. 29–36.
Contributors: B. Sarkar n, P. Reddy n , F. Kaess n, B. Haidet n, J. Tweedie*, *, R. Kirste*, E. Kohn n, R. Collazo n , Z. Sitar n
2017 article
Defect quasi Fermi level control-based CN reduction in GaN: Evidence for the role of minority carriers
Reddy, P., Kaess, F., Tweedie, J., Kirste, R., Mita, S., Collazo, R., & Sitar, Z. (2017, October 9). Applied Physics Letters, Vol. 111, p. 152101.
Contributors: P. Reddy n , F. Kaess n, J. Tweedie*, R. Kirste*, *, R. Collazo n , Z. Sitar n
2017 article
High free carrier concentration in p-GaN grown on AlN substrates
Sarkar, B., Mita, S., Reddy, P., Klump, A., Kaess, F., Tweedie, J., … Sitar, Z. (2017, July 17). Applied Physics Letters, Vol. 111, p. 032109.
2015 article
Selective area epitaxy of magnesium oxide thin films on gallium nitride surfaces
Losego, M. D., Paisley, E. A., Craft, H. S., Lam, P. G., Sachet, E., Mita, S., … Maria, J.-P. (2015, November 12). Journal of Materials Research/Pratt's Guide to Venture Capital Sources, Vol. 31, pp. 36–45.
2014 article
Smooth cubic commensurate oxides on gallium nitride
Paisley, E. A., Gaddy, B. E., LeBeau, J. M., Shelton, C. T., Biegalski, M. D., Christen, H. M., … Maria, J.-P. (2014, February 11). Journal of Applied Physics, Vol. 115.
2012 article
Fermi Level Control of Point Defects During Growth of Mg-Doped GaN
Bryan, Z., Hoffmann, M., Tweedie, J., Kirste, R., Callsen, G., Bryan, I., … Collazo, R. (2012, December 4). Journal of Electronic Materials, Vol. 42, pp. 815–819.
2012 article
Surfactant assisted growth of MgO films on GaN
Paisley, E. A., Shelton, T. C., Mita, S., Collazo, R., Christen, H. M., Sitar, Z., … Maria, J.-P. (2012, August 27). Applied Physics Letters, Vol. 101.
2011 article
On the strain in n-type GaN
Xie, J., Mita, S., Hussey, L., Rice, A., Tweedie, J., LeBeau, J., … Sitar, Z. (2011, October 3). Applied Physics Letters, Vol. 99.
2011 article
Progress on n‐type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications
Collazo, R., Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., & Sitar, Z. (2011, May 9). Physica Status Solidi. C, Conferences and Critical Reviews/Physica Status Solidi. C, Current Topics in Solid State Physics, Vol. 8.
2010 article
Critical examination of growth rate for magnesium oxide (MgO) thin films deposited by molecular beam epitaxy with a molecular oxygen flux
Losego, M. D., Craft, H. S., Paisley, E. A., Mita, S., Collazo, R., Sitar, Z., & Maria, J.-P. (2010, March 26). Journal of Materials Research/Pratt's Guide to Venture Capital Sources, Vol. 25, pp. 670–679.
2009 article
Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition
Mita, S., Collazo, R., & Sitar, Z. (2009, January 21). Journal of Crystal Growth, Vol. 311, pp. 3044–3048.
2009 article
Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1−xN (0≤x≤1) deposition by LP OMVPE
Rice, A., Collazo, R., Tweedie, J., Xie, J., Mita, S., & Sitar, Z. (2009, September 18). Journal of Crystal Growth, Vol. 312, pp. 1321–1324.
2008 journal article
Direct Observation of Inversion Domain Boundaries of GaN onc-Sapphire at Sub-ångstrom Resolution
Advanced Materials, 20(11), 2162–2165.
2008 journal article
Epitaxial Ba0.5Sr0.5TiO3–GaN heterostructures with abrupt interfaces
Journal of Crystal Growth, 311(4), 1106–1109.
2008 article
Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition
Mita, S., Collazo, R., Rice, A., Dalmau, R. F., & Sitar, Z. (2008, July 1). Journal of Applied Physics, Vol. 104.
2008 article
Spectroscopic analysis of the epitaxial CaO (111)–GaN (0002) interface
Craft, H. S., Collazo, R., Losego, M. D., Mita, S., Sitar, Z., & Maria, J.-P. (2008, February 25). Applied Physics Letters, Vol. 92.
2008 article
The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition
Dietz, N., Alevli, M., Atalay, R., Durkaya, G., Collazo, R., Tweedie, J., … Sitar, Z. (2008, January 28). Applied Physics Letters, Vol. 92.
2007 article
Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy
Craft, H. S., Collazo, R., Losego, M. D., Mita, S., Sitar, Z., & Maria, J.-P. (2007, October 1). Journal of Applied Physics, Vol. 102.
2007 article
Epitaxial calcium oxide films deposited on gallium nitride surfaces
Losego, M. D., Mita, S., Collazo, R., Sitar, Z., & Maria, J.-P. (2007, May 1). Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, Vol. 25, pp. 1029–1032.
2007 article
Epitaxial growth of the metastable phase ytterbium monoxide on gallium nitride surfaces
Losego, M. D., Mita, S., Collazo, R., Sitar, Z., & Maria, J.-P. (2007, October 6). Journal of Crystal Growth, Vol. 310, pp. 51–56.
2007 article
Simultaneous growth of a GaN p∕n lateral polarity junction by polar selective doping
Collazo, R., Mita, S., Rice, A., Dalmau, R. F., & Sitar, Z. (2007, November 19). Applied Physics Letters, Vol. 91.
2007 article
The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence
Liu, F., Collazo, R., Mita, S., Sitar, Z., Duscher, G., & Pennycook, S. J. (2007, November 12). Applied Physics Letters, Vol. 91.
2007 article
Three‐Dimensional Geometry of Nanometer‐Scale AlN Pits: A New Template for Quantum Dots?
Liu, F., Collazo, R., Mita, S., Sitar, Z., & Duscher, G. (2007, December 7). Advanced Materials, Vol. 20, p. 134-.
2007 article
X-Ray Photoelectron Spectroscopy Characterization of Aluminum Nitride Surface Oxides: Thermal and Hydrothermal Evolution
Dalmau, R., Collazo, R., Mita, S., & Sitar, Z. (2007, January 22). Journal of Electronic Materials, Vol. 36, pp. 414–419.
2005 article
Growth of Ga- and N- polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers
Collazo, R., Mita, S., Aleksov, A., Schlesser, R., & Sitar, Z. (2005, December 28). Journal of Crystal Growth, Vol. 287, pp. 586–590.
conference paper
Fabrication and characterization of lateral polar GaN structures for second harmonic generation
Hoffmann, M. P., Gerhold, M., Kirste, R., Rice, A., Akouala, C. R., Xie, J. Q. Q., … Sitar, Z. Quantum sensing and nanophotonic devices x, 8631.