Seiji Mita

High conductivity in Ge-doped AlN achieved by a non-equilibrium process

APPLIED PHYSICS LETTERS, 122(14).

High p-conductivity in AlGaN enabled by polarization field engineering

APPLIED PHYSICS LETTERS, 122(15).

Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor

APPLIED PHYSICS EXPRESS, 16(3).

The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN

APPLIED PHYSICS LETTERS, 120(3).

Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates

Rathkanthiwar, S., Graziano, M. B., Tweedie, J., Mita, S., Kirste, R., Collazo, R., & Sitar, Z. (2022, October 25). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 10.

Doping and compensation in heavily Mg doped Al-rich AlGaN films

APPLIED PHYSICS LETTERS, 120(8).

High electron mobility in AlN:Si by point and extended defect management

JOURNAL OF APPLIED PHYSICS, 132(18).

Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3.

Low resistivity, p-type, N-Polar GaN achieved by chemical potential control

APPLIED PHYSICS EXPRESS, 15(8).

On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).

Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices

APPLIED PHYSICS EXPRESS, 15(5).

Pseudomorphic growth of thick Al0.6Ga0.4N epilayers on AlN substrates

APPLIED PHYSICS LETTERS, 120(20).

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS, 120(17).

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

APPLIED PHYSICS EXPRESS, 15(10).

A pathway to highly conducting Ge-doped AlGaN

JOURNAL OF APPLIED PHYSICS, 130(20).

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

APPLIED PHYSICS LETTERS, 118(2).

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

APPLIED PHYSICS LETTERS, 118(11).

On the Ge shallow-to-deep level transition in Al-rich AlGaN

JOURNAL OF APPLIED PHYSICS, 130(5).

Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

APPLIED PHYSICS LETTERS, 118(4).

Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN

APPLIED PHYSICS LETTERS, 119(18).

Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies

APPLIED PHYSICS LETTERS, 119(2).

Weak localization and dimensional crossover in compositionally graded AlxGa1-xN

APPLIED PHYSICS LETTERS, 118(8).

Cathodoluminescence of silicon doped aluminum nitride with scanning transmission electron microscopy

APL MATERIALS, 8(9).

Recovery kinetics in high temperature annealed AlN heteroepitaxial films

JOURNAL OF APPLIED PHYSICS, 127(11).

Quasi-phase-matched second harmonic generation of UV light using AlN waveguides

APPLIED PHYSICS LETTERS, 114(10).

The polarization field in Al-rich AlGaN multiple quantum wells

Guo, Q., Kirste, R., Mita, S., Tweedie, J., Reddy, P., Washiyama, S., … Sitar, Z. (2019, June 1). JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 58.

The role of transient surface morphology on composition control in AlGaN layers and wells

APPLIED PHYSICS LETTERS, 114(3).

A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 124(11).

Structure of Ultrathin Native Oxides on III-Nitride Surfaces

ACS APPLIED MATERIALS & INTERFACES, 10(13), 10607–10611.

(Invited) Material Considerations for the Development of III-nitride Power Devices

GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 7, Vol. 80, pp. 29–36.

Defect quasi Fermi level control-based C-N reduction in GaN: Evidence for the role of minority carriers

APPLIED PHYSICS LETTERS, 111(15).

High free carrier concentration in p-GaN grown on AlN substrates

APPLIED PHYSICS LETTERS, 111(3).

Selective area epitaxy of magnesium oxide thin films on gallium nitride surfaces

JOURNAL OF MATERIALS RESEARCH, 31(1), 36–45.

Smooth cubic commensurate oxides on gallium nitride

JOURNAL OF APPLIED PHYSICS, 115(6).

Fermi Level Control of Point Defects During Growth of Mg-Doped GaN

JOURNAL OF ELECTRONIC MATERIALS, 42(5), 815–819.

Surfactant assisted growth of MgO films on GaN

APPLIED PHYSICS LETTERS, 101(9).

On the strain in n-type GaN

APPLIED PHYSICS LETTERS, 99(14).

Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, Vol. 8.

Critical examination of growth rate for magnesium oxide (MgO) thin films deposited by molecular beam epitaxy with a molecular oxygen flux

JOURNAL OF MATERIALS RESEARCH, 25(4), 670–679.

Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1-xN (0 <= x <= 1) deposition by LP OMVPE

Rice, A., Collazo, R., Tweedie, J., Xie, J., Mita, S., & Sitar, Z. (2010, April 1). JOURNAL OF CRYSTAL GROWTH, Vol. 312, pp. 1321–1324.

Epitaxial Ba0.5Sr0.5TiO3–GaN heterostructures with abrupt interfaces

Journal of Crystal Growth, 311(4), 1106–1109.

Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition

Mita, S., Collazo, R., & Sitar, Z. (2009, May 1). JOURNAL OF CRYSTAL GROWTH, Vol. 311, pp. 3044–3048.

Direct Observation of Inversion Domain Boundaries of GaN onc-Sapphire at Sub-ångstrom Resolution

Advanced Materials, 20(11), 2162–2165.

Epitaxial growth of the metastable phase ytterbium monoxide on gallium nitride surfaces

JOURNAL OF CRYSTAL GROWTH, 310(1), 51–56.

Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 104(1).

Spectroscopic analysis of the epitaxial CaO (111)-GaN (0002) interface

APPLIED PHYSICS LETTERS, 92(8).

The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition

APPLIED PHYSICS LETTERS, 92(4).

Three-dimensional geometry of nanometer-scale AlN pits: A new template for quantum dots?

Advanced Materials, 20(1), 134-.

Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy

JOURNAL OF APPLIED PHYSICS, 102(7).

Epitaxial calcium oxide films deposited on gallium nitride surfaces

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 25, pp. 1029–1032.

Simultaneous growth of a GaN p/n lateral polarity junction by polar selective doping

APPLIED PHYSICS LETTERS, 91(21).

The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence

APPLIED PHYSICS LETTERS, 91(20).

X-ray photoelectron spectroscopy characterization of aluminum nitride surface oxides: Thermal and hydrothermal evolution

Journal of Electronic Materials, 36(4), 414–419.

Growth of Ga- and N- polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers

Collazo, R., Mita, S., Aleksov, A., Schlesser, R., & Sitar, Z. (2006, January 25). JOURNAL OF CRYSTAL GROWTH, Vol. 287, pp. 586–590.

Fabrication and characterization of lateral polar GaN structures for second harmonic generation

Hoffmann, M. P., Gerhold, M., Kirste, R., Rice, A., Akouala, C. R., Xie, J. Q. Q., … Sitar, Z. Quantum sensing and nanophotonic devices x, 8631.