Works (59)

Updated: January 22nd, 2024 08:12

2023 article

Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing

Stein, S. R., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., Tweedie, J., … Pavlidis, S. (2023, December 12). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12.

By: S. Stein n, D. Khachariya*, W. Mecouch*, S. Mita*, P. Reddy*, J. Tweedie n, K. Sierakowski*, G. Kamler* ...

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
author keywords: Schottky diodes; Annealing; Ion implantation; Schottky barriers; P-n junctions; Resistance; Gallium nitride; junction barrier Schottky (JBS) diode; Mg activation; p-n diode; power semiconductor device; Schottky contact; ultrahigh-pressure annealing (UHPA); vertical GaN
Sources: Web Of Science, ORCID
Added: January 2, 2024

2023 journal article

Anderson transition in compositionally graded p-AlGaN

JOURNAL OF APPLIED PHYSICS, 134(19).

By: S. Rathkanthiwar n, P. Reddy*, C. Quinones n, J. Loveless n, M. Kamiyama n, P. Bagheri n, D. Khachariya*, T. Eldred n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: November 16, 2023

2023 journal article

Demonstration of near-ideal Schottky contacts to Si-doped AlN

APPLIED PHYSICS LETTERS, 123(17).

By: C. Quinones n, D. Khachariya*, P. Bagheri n, P. Reddy*, S. Mita*, R. Kirste*, S. Rathkanthiwar n, J. Tweedie* ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: October 25, 2023

2023 journal article

High conductivity in Ge-doped AlN achieved by a non-equilibrium process

APPLIED PHYSICS LETTERS, 122(14).

By: P. Bagheri n, C. Quinones-Garcia n, D. Khachariya*, J. Loveless n, Y. Guan n, S. Rathkanthiwar n, P. Reddy*, R. Kirste* ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: April 6, 2023

2023 journal article

High p-conductivity in AlGaN enabled by polarization field engineering

APPLIED PHYSICS LETTERS, 122(15).

By: S. Rathkanthiwar n, P. Reddy*, B. Moody*, C. Quinones-Garcia n, P. Bagheri n, D. Khachariya*, R. Dalmau*, S. Mita* ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: April 19, 2023

2023 journal article

Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor

APPLIED PHYSICS EXPRESS, 16(3).

By: S. Stein n, D. Khachariya*, S. Mita*, M. Breckenridge n, J. Tweedie*, P. Reddy*, K. Sierakowski*, G. Kamler* ...

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
author keywords: GaN; JBS diode; Schottky contact; ultra-high-pressure-annealing; ideality factor; ion implantation; barrier height
Sources: Web Of Science, ORCID
Added: April 17, 2023

2022 journal article

The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN

APPLIED PHYSICS LETTERS, 120(3).

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: May 2, 2022

2022 article

Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates

Rathkanthiwar, S., Graziano, M. B., Tweedie, J., Mita, S., Kirste, R., Collazo, R., & Sitar, Z. (2022, October 25). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 10.

By: S. Rathkanthiwar n, M. Graziano n, J. Tweedie*, S. Mita*, R. Kirste*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
author keywords: AlGaN; AlN substrates; strain relaxation; tilt
Sources: Web Of Science, ORCID
Added: October 31, 2022

2022 journal article

Doping and compensation in heavily Mg doped Al-rich AlGaN films

APPLIED PHYSICS LETTERS, 120(8).

By: P. Bagheri n, A. Klump n, S. Washiyama n, M. Breckenridge n, J. Kim n, Y. Guan n, D. Khachariya n, C. Quinones-Garcia n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: June 20, 2022

2022 journal article

High electron mobility in AlN:Si by point and extended defect management

JOURNAL OF APPLIED PHYSICS, 132(18).

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: November 10, 2022

2022 article

Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3.

By: P. Reddy*, W. Mecouch*, M. Breckenridge n, D. Khachariya n, P. Bagheri n, J. Kim n, Y. Guan n, S. Mita* ...

co-author countries: United States of America 🇺🇸
author keywords: AlGaN; APD; UVC
Sources: Web Of Science, ORCID
Added: March 11, 2022

2022 journal article

Low resistivity, p-type, N-Polar GaN achieved by chemical potential control

APPLIED PHYSICS EXPRESS, 15(8).

By: S. Rathkanthiwar n, D. Szymanski n, D. Khachariya n, P. Bagheri n, J. Kim n, S. Mita*, P. Reddy*, E. Kohn n ...

co-author countries: United States of America 🇺🇸
author keywords: N-polar GaN; p doping; compensation; chemical potential control
Sources: Web Of Science, ORCID
Added: August 8, 2022

2022 journal article

On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).

By: A. Jadhav*, P. Bagheri n, A. Klump n, D. Khachariya n, S. Mita*, P. Reddy*, S. Rathkanthiwar n, R. Kirste* ...

co-author countries: India 🇮🇳 United States of America 🇺🇸
author keywords: III-nitride; Mg-doped AlGaN; ionization energy; mobility; contact resistance
Sources: Web Of Science, ORCID
Added: November 6, 2021

2022 journal article

Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices

APPLIED PHYSICS EXPRESS, 15(5).

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: April 25, 2022

2022 journal article

Pseudomorphic growth of thick Al0.6Ga0.4N epilayers on AlN substrates

APPLIED PHYSICS LETTERS, 120(20).

By: S. Rathkanthiwar n, J. Dycus*, S. Mita*, R. Kirste*, J. Tweedie*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: May 31, 2022

2022 journal article

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS, 120(17).

By: D. Khachariya n, S. Mita*, P. Reddy*, S. Dangi n, J. Dycus*, P. Bagheri n, M. Breckenridge n, R. Sengupta n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: May 31, 2022

2022 journal article

Systematic oxygen impurity reduction in smooth N-polar GaN by chemical potential control

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).

By: D. Szymanski*, K. Wang, F. Kaess*, R. Kirste*, S. Mita*, P. Reddy*, Z. Sitar*, R. Collazo*

author keywords: oxygen; impurity; semiconductor; nitride; chemical potential; defect
Sources: Web Of Science, ORCID
Added: June 19, 2023

2022 journal article

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

APPLIED PHYSICS EXPRESS, 15(10).

By: D. Khachariya*, S. Stein n, W. Mecouch*, M. Breckenridge n, S. Rathkanthiwar n, S. Mita*, B. Moody*, P. Reddy* ...

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
author keywords: GaN; junction barrier Schottky diode; low ON-resistance; high breakdown voltage; Mg ion implantation; ultra-high-pressure anneal
Sources: Web Of Science, ORCID
Added: October 3, 2022

2021 journal article

A pathway to highly conducting Ge-doped AlGaN

JOURNAL OF APPLIED PHYSICS, 130(20).

By: P. Bagheri n, J. Kim n, S. Washiyama n, P. Reddy*, A. Klump n, R. Kirste*, S. Mita*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: November 23, 2021

2021 journal article

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

APPLIED PHYSICS LETTERS, 118(2).

By: M. Breckenridge n, J. Tweedie*, P. Reddy*, Y. Guan n, P. Bagheri n, D. Szymanski n, S. Mita*, K. Sierakowski* ...

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: January 14, 2021

2021 journal article

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

APPLIED PHYSICS LETTERS, 118(11).

By: M. Breckenridge n, P. Bagheri n, Q. Guo n, B. Sarkar n, D. Khachariya n, S. Pavlidis n, J. Tweedie*, R. Kirste* ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: March 17, 2021

2021 journal article

On the Ge shallow-to-deep level transition in Al-rich AlGaN

JOURNAL OF APPLIED PHYSICS, 130(5).

By: P. Bagheri n, P. Reddy*, S. Mita*, D. Szymanski n, J. Kim n, Y. Guan n, D. Khachariya n, A. Klump n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 4, 2021

2021 journal article

Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

APPLIED PHYSICS LETTERS, 118(4).

By: S. Washiyama n, K. Mirrielees n, P. Bagheri n, J. Baker n, J. Kim n, Q. Guo n, R. Kirste*, Y. Guan n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: March 29, 2021

2021 journal article

Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN

APPLIED PHYSICS LETTERS, 119(18).

By: P. Reddy*, D. Khachariya n, W. Mecouch*, M. Breckenridge n, P. Bagheri n, Y. Guan n, J. Kim n, S. Pavlidis n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: November 3, 2021

2021 journal article

Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies

APPLIED PHYSICS LETTERS, 119(2).

By: J. Kim n, P. Bagheri n, S. Washiyama n, A. Klump n, R. Kirste*, S. Mita*, P. Reddy*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: July 26, 2021

2021 journal article

Weak localization and dimensional crossover in compositionally graded AlxGa1-xN

APPLIED PHYSICS LETTERS, 118(8).

By: A. Al-Tawhid n, A. Shafe n, P. Bagheri n, Y. Guan n, P. Reddy*, S. Mita*, B. Moody*, R. Collazo n, Z. Sitar n, K. Ahadi n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: February 25, 2021

2020 journal article

Cathodoluminescence of silicon doped aluminum nitride with scanning transmission electron microscopy

APL MATERIALS, 8(9).

By: M. Hauwiller*, D. Stowe, T. Eldred n, S. Mita n, R. Collazo n, Z. Sitar n, J. LeBeau*

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: October 19, 2020

2020 journal article

Recovery kinetics in high temperature annealed AlN heteroepitaxial films

JOURNAL OF APPLIED PHYSICS, 127(11).

By: S. Washiyama n, Y. Guan n, S. Mita*, R. Collazo n & Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: April 20, 2020

2019 journal article

Quasi-phase-matched second harmonic generation of UV light using AlN waveguides

APPLIED PHYSICS LETTERS, 114(10).

By: D. Alden n, T. Troha*, R. Kirste n, S. Mita n, Q. Guo n, A. Hoffmann*, M. Zgonik*, R. Collazo n, Z. Sitar n

co-author countries: Germany 🇩🇪 Slovenia 🇸🇮 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: April 2, 2019

2019 article

The polarization field in Al-rich AlGaN multiple quantum wells

Guo, Q., Kirste, R., Mita, S., Tweedie, J., Reddy, P., Washiyama, S., … Sitar, Z. (2019, June 1). JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 58.

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: July 29, 2019

2019 journal article

The role of transient surface morphology on composition control in AlGaN layers and wells

APPLIED PHYSICS LETTERS, 114(3).

By: J. Dycus n, S. Washiyama n, T. Eldred n, Y. Guan n, R. Kirste*, S. Mita*, Z. Sitar n, R. Collazo n, J. LeBeau n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: February 11, 2019

2018 journal article

A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 124(11).

By: S. Washiyama n, P. Reddy*, F. Kaess n, R. Kirste*, S. Mita*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: October 16, 2018

2018 journal article

Structure of Ultrathin Native Oxides on III-Nitride Surfaces

ACS APPLIED MATERIALS & INTERFACES, 10(13), 10607–10611.

By: J. Dycus n, K. Mirrielees n, E. Grimley n, R. Kirste n, S. Mita n, Z. Sitar n, R. Collazo n, D. Irving n, J. LeBeau n

co-author countries: United States of America 🇺🇸
author keywords: ultrathin oxides; surface reconstructions; group III nitrides; scanning transmission electron microscopy; density functional theory
Sources: Web Of Science, ORCID
Added: August 6, 2018

2017 article

(Invited) Material Considerations for the Development of III-nitride Power Devices

GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 7, Vol. 80, pp. 29–36.

By: B. Sarkar n, P. Reddy n, F. Kaess n, B. Haidet n, J. Tweedie*, S. Mita*, R. Kirste*, E. Kohn n ...

co-author countries: United States of America 🇺🇸

Contributors: B. Sarkar n, P. Reddy n, F. Kaess n, B. Haidet n, J. Tweedie*, S. Mita*, R. Kirste*, E. Kohn n, R. Collazo n, Z. Sitar n

Sources: Web Of Science, ORCID
Added: August 6, 2018

2017 journal article

Defect quasi Fermi level control-based C-N reduction in GaN: Evidence for the role of minority carriers

APPLIED PHYSICS LETTERS, 111(15).

By: P. Reddy n, F. Kaess n, J. Tweedie*, R. Kirste*, S. Mita*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2017 journal article

High free carrier concentration in p-GaN grown on AlN substrates

APPLIED PHYSICS LETTERS, 111(3).

By: B. Sarkar n, S. Mita n, P. Reddy n, A. Klump n, F. Kaess n, J. Tweedie n, I. Bryan n, Z. Bryan n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 journal article

Selective area epitaxy of magnesium oxide thin films on gallium nitride surfaces

JOURNAL OF MATERIALS RESEARCH, 31(1), 36–45.

By: M. Losego*, E. Paisley*, H. Craft n, P. Lam n, E. Sachet n, S. Mita n, R. Collazo n, Z. Sitar n, J. Maria n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 journal article

Smooth cubic commensurate oxides on gallium nitride

JOURNAL OF APPLIED PHYSICS, 115(6).

By: E. Paisley n, B. Gaddy n, J. LeBeau n, C. Shelton n, M. Biegalski*, H. Christen*, M. Losego n, S. Mita n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2013 journal article

Fermi Level Control of Point Defects During Growth of Mg-Doped GaN

JOURNAL OF ELECTRONIC MATERIALS, 42(5), 815–819.

By: Z. Bryan n, M. Hoffmann n, J. Tweedie n, R. Kirste n, G. Callsen*, I. Bryan n, A. Rice n, M. Bobea n ...

co-author countries: Germany 🇩🇪 United States of America 🇺🇸
author keywords: Mg; GaN; UV excitation; Photoluminescence; Metal-organic chemical vapordeposition (MOCVD)
Sources: Web Of Science, ORCID
Added: August 6, 2018

2012 journal article

Surfactant assisted growth of MgO films on GaN

APPLIED PHYSICS LETTERS, 101(9).

By: E. Paisley n, T. Shelton n, S. Mita*, R. Collazo n, H. Christen*, Z. Sitar n, M. Biegalski*, J. Maria n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2011 journal article

On the strain in n-type GaN

APPLIED PHYSICS LETTERS, 99(14).

By: J. Xie*, S. Mita*, L. Hussey n, A. Rice n, J. Tweedie n, J. LeBeau n, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
author keywords: dislocation climb; elemental semiconductors; Fermi level; gallium compounds; germanium; III-V semiconductors; MOCVD; semiconductor doping; semiconductor epitaxial layers; tensile strength; transmission electron microscopy; vacancies (crystal); vapour phase epitaxial growth; wide band gap semiconductors; X-ray diffraction
Sources: Web Of Science, ORCID
Added: August 6, 2018

2011 article

Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, Vol. 8.

By: R. Collazo n, S. Mita*, J. Xie*, A. Rice n, J. Tweedie n, R. Dalmau*, Z. Sitar n, C. Wetzel, A. Khan

co-author countries: United States of America 🇺🇸
author keywords: aluminium nitride; aluminium gallium nitride; n-type doping; UV light emitting diodes
Sources: Web Of Science, ORCID
Added: August 6, 2018

2010 journal article

Critical examination of growth rate for magnesium oxide (MgO) thin films deposited by molecular beam epitaxy with a molecular oxygen flux

JOURNAL OF MATERIALS RESEARCH, 25(4), 670–679.

By: M. Losego n, H. Craft n, E. Paisley n, S. Mita n, R. Collazo n, Z. Sitar n, J. Maria n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2010 article

Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1-xN (0 <= x <= 1) deposition by LP OMVPE

Rice, A., Collazo, R., Tweedie, J., Xie, J., Mita, S., & Sitar, Z. (2010, April 1). JOURNAL OF CRYSTAL GROWTH, Vol. 312, pp. 1321–1324.

By: A. Rice n, R. Collazo n, J. Tweedie n, J. Xie*, S. Mita* & Z. Sitar n

co-author countries: United States of America 🇺🇸
author keywords: Low-pressure metalorganic vapor phase epitaxy; Organometallic vapor phase epitaxy; Nitrides; Semiconducting III-V materials; Semiconducting ternary compounds
Sources: Web Of Science, ORCID
Added: August 6, 2018

2009 journal article

Epitaxial Ba0.5Sr0.5TiO3–GaN heterostructures with abrupt interfaces

Journal of Crystal Growth, 311(4), 1106–1109.

By: M. Losego*, L. Fitting Kourkoutis, S. Mita*, H. Craft*, D. Muller, R. Collazo*, Z. Sitar*, J. Maria*

author keywords: Physical vapor deposition processes; Nitrides; Perovskites; Ferroelectric materials
Sources: Web Of Science, Crossref, ORCID
Added: August 6, 2018

2009 article

Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition

Mita, S., Collazo, R., & Sitar, Z. (2009, May 1). JOURNAL OF CRYSTAL GROWTH, Vol. 311, pp. 3044–3048.

By: S. Mita n, R. Collazo n & Z. Sitar n

co-author countries: United States of America 🇺🇸
author keywords: Crystal structure; Chemical vapor deposition process; Metalorganic chemical vapor deposition; Nitrides; Semiconducting III-V materials
Sources: Web Of Science, ORCID
Added: August 6, 2018

2008 journal article

Direct Observation of Inversion Domain Boundaries of GaN onc-Sapphire at Sub-ångstrom Resolution

Advanced Materials, 20(11), 2162–2165.

By: F. Liu n, R. Collazo n, S. Mita n, Z. Sitar n, S. Pennycook* & G. Duscher*

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, Crossref, ORCID
Added: August 6, 2018

2008 journal article

Epitaxial growth of the metastable phase ytterbium monoxide on gallium nitride surfaces

JOURNAL OF CRYSTAL GROWTH, 310(1), 51–56.

By: M. Losego n, S. Mita n, R. Collazo n, Z. Sitar n & J. Maria n

co-author countries: United States of America 🇺🇸
author keywords: phase equilibria; molecular beam epitaxy; metastable compounds; oxides; rare earth compounds; ytterbium monoxide
Sources: Web Of Science, ORCID
Added: August 6, 2018

2008 journal article

Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 104(1).

By: S. Mita n, R. Collazo n, A. Rice n, R. Dalmau n & Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2008 journal article

Spectroscopic analysis of the epitaxial CaO (111)-GaN (0002) interface

APPLIED PHYSICS LETTERS, 92(8).

By: H. Craft n, R. Collazo n, M. Losego n, S. Mita n, Z. Sitar n & J. Maria n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2008 journal article

The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition

APPLIED PHYSICS LETTERS, 92(4).

By: N. Dietz*, M. Alevli*, R. Atalay*, G. Durkaya*, R. Collazo n, J. Tweedie n, S. Mita n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2008 journal article

Three-dimensional geometry of nanometer-scale AlN pits: A new template for quantum dots?

Advanced Materials, 20(1), 134-.

By: F. Liu n, R. Collazo n, S. Mita n, Z. Sitar n & G. Duscher n

co-author countries: United States of America 🇺🇸
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2007 journal article

Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy

JOURNAL OF APPLIED PHYSICS, 102(7).

By: H. Craft n, R. Collazo n, M. Losego n, S. Mita n, Z. Sitar n & J. Maria n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2007 article

Epitaxial calcium oxide films deposited on gallium nitride surfaces

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 25, pp. 1029–1032.

By: M. Losego n, S. Mita n, R. Collazo n, Z. Sitar n & J. Maria n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2007 journal article

Simultaneous growth of a GaN p/n lateral polarity junction by polar selective doping

APPLIED PHYSICS LETTERS, 91(21).

By: R. Collazo n, S. Mita n, A. Rice n, R. Dalmau n & Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2007 journal article

The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence

APPLIED PHYSICS LETTERS, 91(20).

By: F. Liu n, R. Collazo n, S. Mita n, Z. Sitar n, G. Duscher n & S. Pennycook*

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2007 journal article

X-ray photoelectron spectroscopy characterization of aluminum nitride surface oxides: Thermal and hydrothermal evolution

Journal of Electronic Materials, 36(4), 414–419.

By: R. Dalmau n, R. Collazo n, S. Mita n & Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2006 article

Growth of Ga- and N- polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers

Collazo, R., Mita, S., Aleksov, A., Schlesser, R., & Sitar, Z. (2006, January 25). JOURNAL OF CRYSTAL GROWTH, Vol. 287, pp. 586–590.

By: R. Collazo n, S. Mita n, A. Aleksov n, R. Schlesser n & Z. Sitar n

co-author countries: United States of America 🇺🇸
author keywords: crystal strcture; chemical vapor deposition process; metalorganic chemical vapor deposition; nitrides; semiconducting III-V materials
Sources: Web Of Science, ORCID
Added: August 6, 2018

conference paper

Fabrication and characterization of lateral polar GaN structures for second harmonic generation

Hoffmann, M. P., Gerhold, M., Kirste, R., Rice, A., Akouala, C. R., Xie, J. Q. Q., … Sitar, Z. Quantum sensing and nanophotonic devices x, 8631.

Source: NC State University Libraries
Added: August 6, 2018

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