Seiji Mita

Stein, S. R., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., Tweedie, J., … Pavlidis, S. (2023, December 12). Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing. IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12. https://doi.org/10.1109/TED.2023.3339592

Rathkanthiwar, S., Reddy, P., Quinones, C. E., Loveless, J., Kamiyama, M., Bagheri, P., … Sitar, Z. (2023). Anderson transition in compositionally graded p-AlGaN. JOURNAL OF APPLIED PHYSICS, 134(19). https://doi.org/10.1063/5.0176419

Quinones, C. E., Khachariya, D., Bagheri, P., Reddy, P., Mita, S., Kirste, R., … Sitar, Z. (2023). Demonstration of near-ideal Schottky contacts to Si-doped AlN. APPLIED PHYSICS LETTERS, 123(17). https://doi.org/10.1063/5.0174524

Bagheri, P., Quinones-Garcia, C., Khachariya, D., Loveless, J., Guan, Y., Rathkanthiwar, S., … Sitar, Z. (2023). High conductivity in Ge-doped AlN achieved by a non-equilibrium process. APPLIED PHYSICS LETTERS, 122(14). https://doi.org/10.1063/5.0146439

Rathkanthiwar, S., Reddy, P., Moody, B., Quinones-Garcia, C., Bagheri, P., Khachariya, D., … Sitar, Z. (2023). High p-conductivity in AlGaN enabled by polarization field engineering. APPLIED PHYSICS LETTERS, 122(15). https://doi.org/10.1063/5.0143427

Stein, S. R., Khachariya, D., Mita, S., Breckenridge, M. H., Tweedie, J., Reddy, P., … Pavlidis, S. (2023). Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor. APPLIED PHYSICS EXPRESS, 16(3). https://doi.org/10.35848/1882-0786/acc443

Wang, K., Kirste, R., Mita, S., Washiyama, S., Mecouch, W., Reddy, P., … Sitar, Z. (2022). <p>The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN</p>. APPLIED PHYSICS LETTERS, 120(3). https://doi.org/10.1063/5.0077628

Rathkanthiwar, S., Graziano, M. B., Tweedie, J., Mita, S., Kirste, R., Collazo, R., & Sitar, Z. (2022, October 25). Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 10. https://doi.org/10.1002/pssr.202200323

Bagheri, P., Klump, A., Washiyama, S., Breckenridge, M. H., Kim, J. H., Guan, Y., … Sitar, Z. (2022). Doping and compensation in heavily Mg doped Al-rich AlGaN films. APPLIED PHYSICS LETTERS, 120(8). https://doi.org/10.1063/5.0082992

Bagheri, P., Quinones-Garcia, C., Khachariya, D., Rathkanthiwar, S., Reddy, P., Kirste, R., … Sitar, Z. (2022). High electron mobility in AlN:Si by point and extended defect management. JOURNAL OF APPLIED PHYSICS, 132(18). https://doi.org/10.1063/5.0124589

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3. https://doi.org/10.1002/pssr.202100619

Rathkanthiwar, S., Szymanski, D., Khachariya, D., Bagheri, P., Kim, J. H., Mita, S., … Sitar, Z. (2022). Low resistivity, p-type, N-Polar GaN achieved by chemical potential control. APPLIED PHYSICS EXPRESS, 15(8). https://doi.org/10.35848/1882-0786/ac8273

Jadhav, A., Bagheri, P., Klump, A., Khachariya, D., Mita, S., Reddy, P., … Sarkar, B. (2022). On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1). https://doi.org/10.1088/1361-6641/ac3710

Rathkanthiwar, S., Bagheri, P., Khachariya, D., Mita, S., Pavlidis, S., Reddy, P., … Collazo, R. (2022). Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices. APPLIED PHYSICS EXPRESS, 15(5). https://doi.org/10.35848/1882-0786/ac6566

Rathkanthiwar, S., Dycus, J. H., Mita, S., Kirste, R., Tweedie, J., Collazo, R., & Sitar, Z. (2022). Pseudomorphic growth of thick Al0.6Ga0.4N epilayers on AlN substrates. APPLIED PHYSICS LETTERS, 120(20). https://doi.org/10.1063/5.0092937

Khachariya, D., Mita, S., Reddy, P., Dangi, S., Dycus, J. H., Bagheri, P., … Pavlidis, S. (2022). Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS, 120(17). https://doi.org/10.1063/5.0083966

Szymanski, D., Wang, K., Kaess, F., Kirste, R., Mita, S., Reddy, P., … Collazo, R. (2022). Systematic oxygen impurity reduction in smooth N-polar GaN by chemical potential control. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1). https://doi.org/10.1088/1361-6641/ac3638

Khachariya, D., Stein, S., Mecouch, W., Breckenridge, M. H., Rathkanthiwar, S., Mita, S., … Sitar, Z. (2022). Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing. APPLIED PHYSICS EXPRESS, 15(10). https://doi.org/10.35848/1882-0786/ac8f81

Bagheri, P., Kim, J. H., Washiyama, S., Reddy, P., Klump, A., Kirste, R., … Sitar, Z. (2021). A pathway to highly conducting Ge-doped AlGaN. JOURNAL OF APPLIED PHYSICS, 130(20). https://doi.org/10.1063/5.0071791

Breckenridge, M. H., Tweedie, J., Reddy, P., Guan, Y., Bagheri, P., Szymanski, D., … Sitar, Z. (2021). High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing. APPLIED PHYSICS LETTERS, 118(2). https://doi.org/10.1063/5.0038628

Breckenridge, M. H., Bagheri, P., Guo, Q., Sarkar, B., Khachariya, D., Pavlidis, S., … Sitar, Z. (2021). High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN. APPLIED PHYSICS LETTERS, 118(11). https://doi.org/10.1063/5.0042857

Bagheri, P., Reddy, P., Mita, S., Szymanski, D., Kim, J. H., Guan, Y., … Sitar, Z. (2021). On the Ge shallow-to-deep level transition in Al-rich AlGaN. JOURNAL OF APPLIED PHYSICS, 130(5). https://doi.org/10.1063/5.0059037

Washiyama, S., Mirrielees, K. J., Bagheri, P., Baker, J. N., Kim, J.-H., Guo, Q., … Sitar, Z. (2021). Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping. APPLIED PHYSICS LETTERS, 118(4). https://doi.org/10.1063/5.0035957

Reddy, P., Khachariya, D., Mecouch, W., Breckenridge, M. H., Bagheri, P., Guan, Y., … Sitar, Z. (2021). Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN. APPLIED PHYSICS LETTERS, 119(18). https://doi.org/10.1063/5.0062831

Kim, J. H., Bagheri, P., Washiyama, S., Klump, A., Kirste, R., Mita, S., … Sitar, Z. (2021). Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies. APPLIED PHYSICS LETTERS, 119(2). https://doi.org/10.1063/5.0055409

Al-Tawhid, A., Shafe, A.-A., Bagheri, P., Guan, Y., Reddy, P., Mita, S., … Ahadi, K. (2021). Weak localization and dimensional crossover in compositionally graded AlxGa1-xN. APPLIED PHYSICS LETTERS, 118(8). https://doi.org/10.1063/5.0042098

Hauwiller, M. R., Stowe, D., Eldred, T. B., Mita, S., Collazo, R., Sitar, Z., & LeBeau, J. (2020). Cathodoluminescence of silicon doped aluminum nitride with scanning transmission electron microscopy. APL MATERIALS, 8(9). https://doi.org/10.1063/5.0019863

Washiyama, S., Guan, Y., Mita, S., Collazo, R., & Sitar, Z. (2020). Recovery kinetics in high temperature annealed AlN heteroepitaxial films. JOURNAL OF APPLIED PHYSICS, 127(11). https://doi.org/10.1063/5.0002891

Alden, D., Troha, T., Kirste, R., Mita, S., Guo, Q., Hoffmann, A., … Sitar, Z. (2019). Quasi-phase-matched second harmonic generation of UV light using AlN waveguides. APPLIED PHYSICS LETTERS, 114(10). https://doi.org/10.1063/1.5087058

Guo, Q., Kirste, R., Mita, S., Tweedie, J., Reddy, P., Washiyama, S., … Sitar, Z. (2019, June 1). The polarization field in Al-rich AlGaN multiple quantum wells. JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 58. https://doi.org/10.7567/1347-4065/ab07a9

Dycus, J. H., Washiyama, S., Eldred, T. B., Guan, Y., Kirste, R., Mita, S., … LeBeau, J. M. (2019). The role of transient surface morphology on composition control in AlGaN layers and wells. APPLIED PHYSICS LETTERS, 114(3). https://doi.org/10.1063/1.5063933

Washiyama, S., Reddy, P., Kaess, F., Kirste, R., Mita, S., Collazo, R., & Sitar, Z. (2018). A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition. JOURNAL OF APPLIED PHYSICS, 124(11). https://doi.org/10.1063/1.5045058

Dycus, J. H., Mirrielees, K. J., Grimley, E. D., Kirste, R., Mita, S., Sitar, Z., … LeBeau, J. M. (2018). Structure of Ultrathin Native Oxides on III-Nitride Surfaces. ACS APPLIED MATERIALS & INTERFACES, 10(13), 10607–10611. https://doi.org/10.1021/acsami.8b00845

Sarkar, B., Reddy, P., Kaess, F., Haidet, B. B., Tweedie, J., Mita, S., … al. (2017). (Invited) Material Considerations for the Development of III-nitride Power Devices. GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 7, Vol. 80, pp. 29–36. https://doi.org/10.1149/08007.0029ecst

Reddy, P., Kaess, F., Tweedie, J., Kirste, R., Mita, S., Collazo, R., & Sitar, Z. (2017). Defect quasi Fermi level control-based C-N reduction in GaN: Evidence for the role of minority carriers. APPLIED PHYSICS LETTERS, 111(15). https://doi.org/10.1063/1.5000720

Sarkar, B., Mita, S., Reddy, P., Klump, A., Kaess, F., Tweedie, J., … Sitar, Z. (2017). High free carrier concentration in p-GaN grown on AlN substrates. APPLIED PHYSICS LETTERS, 111(3). https://doi.org/10.1063/1.4995239

Losego, M. D., Paisley, E. A., Craft, H. S., Lam, P. G., Sachet, E., Mita, S., … Maria, J.-P. (2016). Selective area epitaxy of magnesium oxide thin films on gallium nitride surfaces. JOURNAL OF MATERIALS RESEARCH, 31(1), 36–45. https://doi.org/10.1557/jmr.2015.332

Paisley, E. A., Gaddy, B. E., LeBeau, J. M., Shelton, C. T., Biegalski, M. D., Christen, H. M., … Maria, J.-P. (2014). Smooth cubic commensurate oxides on gallium nitride. JOURNAL OF APPLIED PHYSICS, 115(6). https://doi.org/10.1063/1.4861172

Bryan, Z., Hoffmann, M., Tweedie, J., Kirste, R., Callsen, G., Bryan, I., … Collazo, R. (2013). Fermi Level Control of Point Defects During Growth of Mg-Doped GaN. JOURNAL OF ELECTRONIC MATERIALS, 42(5), 815–819. https://doi.org/10.1007/s11664-012-2342-9

Paisley, E. A., Shelton, T. C., Mita, S., Collazo, R., Christen, H. M., Sitar, Z., … Maria, J.-P. (2012). Surfactant assisted growth of MgO films on GaN. APPLIED PHYSICS LETTERS, 101(9). https://doi.org/10.1063/1.4748886

Xie, J., Mita, S., Hussey, L., Rice, A., Tweedie, J., LeBeau, J., … Sitar, Z. (2011). On the strain in n-type GaN. APPLIED PHYSICS LETTERS, 99(14). https://doi.org/10.1063/1.3647772

Collazo, R., Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., … Khan, A. (2011). Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, Vol. 8. https://doi.org/10.1002/pssc.201000964

Losego, M. D., Craft, H. S., Paisley, E. A., Mita, S., Collazo, R., Sitar, Z., & Maria, J.-P. (2010). Critical examination of growth rate for magnesium oxide (MgO) thin films deposited by molecular beam epitaxy with a molecular oxygen flux. JOURNAL OF MATERIALS RESEARCH, 25(4), 670–679. https://doi.org/10.1557/jmr.2010.0096

Rice, A., Collazo, R., Tweedie, J., Xie, J., Mita, S., & Sitar, Z. (2010, April 1). Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1-xN (0 <= x <= 1) deposition by LP OMVPE. JOURNAL OF CRYSTAL GROWTH, Vol. 312, pp. 1321–1324. https://doi.org/10.1016/j.jcrysgro.2009.09.011

Losego, M. D., Fitting Kourkoutis, L., Mita, S., Craft, H. S., Muller, D. A., Collazo, R., … Maria, J.-P. (2009). Epitaxial Ba0.5Sr0.5TiO3–GaN heterostructures with abrupt interfaces. Journal of Crystal Growth, 311(4), 1106–1109. https://doi.org/10.1016/j.jcrysgro.2008.11.085

Mita, S., Collazo, R., & Sitar, Z. (2009, May 1). Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition. JOURNAL OF CRYSTAL GROWTH, Vol. 311, pp. 3044–3048. https://doi.org/10.1016/j.jcrysgro.2009.01.075

Liu, F., Collazo, R., Mita, S., Sitar, Z., Pennycook, S. J., & Duscher, G. (2008). Direct Observation of Inversion Domain Boundaries of GaN onc-Sapphire at Sub-ångstrom Resolution. Advanced Materials, 20(11), 2162–2165. https://doi.org/10.1002/adma.200702522

Losego, M. D., Mita, S., Collazo, R., Sitar, Z., & Maria, J.-P. (2008). Epitaxial growth of the metastable phase ytterbium monoxide on gallium nitride surfaces. JOURNAL OF CRYSTAL GROWTH, 310(1), 51–56. https://doi.org/10.1016/j.jcrysgro.2007.10.002

Mita, S., Collazo, R., Rice, A., Dalmau, R. F., & Sitar, Z. (2008). Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition. JOURNAL OF APPLIED PHYSICS, 104(1). https://doi.org/10.1063/1.2952027

Craft, H. S., Collazo, R., Losego, M. D., Mita, S., Sitar, Z., & Maria, J.-P. (2008). Spectroscopic analysis of the epitaxial CaO (111)-GaN (0002) interface. APPLIED PHYSICS LETTERS, 92(8). https://doi.org/10.1063/1.2887878

Dietz, N., Alevli, M., Atalay, R., Durkaya, G., Collazo, R., Tweedie, J., … Sitar, Z. (2008). The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition. APPLIED PHYSICS LETTERS, 92(4). https://doi.org/10.1063/1.2840192

Liu, F. D., Collazo, R., Mita, S., Sitar, Z., & Duscher, G. (2008). Three-dimensional geometry of nanometer-scale AlN pits: A new template for quantum dots? Advanced Materials, 20(1), 134-. https://doi.org/10.1002/adma.200701288

Craft, H. S., Collazo, R., Losego, M. D., Mita, S., Sitar, Z., & Maria, J.-P. (2007). Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy. JOURNAL OF APPLIED PHYSICS, 102(7). https://doi.org/10.1063/1.2785022

Losego, M. D., Mita, S., Collazo, R., Sitar, Z., & Maria, J.-P. (2007). Epitaxial calcium oxide films deposited on gallium nitride surfaces. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 25, pp. 1029–1032. https://doi.org/10.1116/1.2710243

Collazo, R., Mita, S., Rice, A., Dalmau, R. F., & Sitar, Z. (2007). Simultaneous growth of a GaN p/n lateral polarity junction by polar selective doping. APPLIED PHYSICS LETTERS, 91(21). https://doi.org/10.1063/1.2816893

Liu, F., Collazo, R., Mita, S., Sitar, Z., Duscher, G., & Pennycook, S. J. (2007). The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence. APPLIED PHYSICS LETTERS, 91(20). https://doi.org/10.1063/1.2815748

Dalmau, R., Collazo, R., Mita, S., & Sitar, Z. (2007). X-ray photoelectron spectroscopy characterization of aluminum nitride surface oxides: Thermal and hydrothermal evolution. Journal of Electronic Materials, 36(4), 414–419. https://doi.org/10.1007/s11664-006-0044-x

Collazo, R., Mita, S., Aleksov, A., Schlesser, R., & Sitar, Z. (2006, January 25). Growth of Ga- and N- polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers. JOURNAL OF CRYSTAL GROWTH, Vol. 287, pp. 586–590. https://doi.org/10.1016/j.jcrysgro.2005.10.080

Hoffmann, M. P., Gerhold, M., Kirste, R., Rice, A., Akouala, C. R., Xie, J. Q. Q., … Sitar, Z. Fabrication and characterization of lateral polar GaN structures for second harmonic generation. Quantum sensing and nanophotonic devices x, 8631.