Works (28)

Updated: January 18th, 2024 05:00

2023 article

Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing

Stein, S. R., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., Tweedie, J., … Pavlidis, S. (2023, December 12). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12.

By: S. Stein n, D. Khachariya*, W. Mecouch*, S. Mita*, P. Reddy*, J. Tweedie n, K. Sierakowski*, G. Kamler* ...

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
author keywords: Schottky diodes; Annealing; Ion implantation; Schottky barriers; P-n junctions; Resistance; Gallium nitride; junction barrier Schottky (JBS) diode; Mg activation; p-n diode; power semiconductor device; Schottky contact; ultrahigh-pressure annealing (UHPA); vertical GaN
Sources: Web Of Science, ORCID
Added: January 2, 2024

2023 article

Chemical Vapor Deposition of Monolayer MoS2 on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction Optoelectronics

Sengupta, R., Vaidya, S., Szymanski, D., Khachariya, D., Bockowski, M., Kamler, G., … Pavlidis, S. (2023, March 24). ACS APPLIED NANO MATERIALS, Vol. 3.

By: R. Sengupta n, S. Vaidya n, D. Szymanski n, D. Khachariya*, M. Bockowski*, G. Kamler*, P. Reddy*, Z. Sitar n, R. Collazo n, S. Pavlidis n

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
author keywords: N-polar; gallium nitride; chemomechanical polishing; MoS 2; monolayer; chemical vapor deposition
Sources: Web Of Science, ORCID
Added: March 25, 2023

2023 journal article

Demonstration of near-ideal Schottky contacts to Si-doped AlN

APPLIED PHYSICS LETTERS, 123(17).

By: C. Quinones n, D. Khachariya*, P. Bagheri n, P. Reddy*, S. Mita*, R. Kirste*, S. Rathkanthiwar n, J. Tweedie* ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: October 25, 2023

2023 article

Enhancement-Mode AlInN/GaN High-Electron-Mobility Transistors Enabled by Thermally Oxidized Gates

Palmese, E., Xue, H., Pavlidis, S., & Wierer, J. J. (2023, December 21). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12.

By: E. Palmese n, H. Xue n, S. Pavlidis n & J. Wierer n

co-author countries: United States of America 🇺🇸
author keywords: HEMTs; Logic gates; MODFETs; Oxidation; Gallium nitride; Fabrication; Threshold voltage; AlInN; enhancement mode; gallium nitride (GaN); high-electron-mobility transistors (HEMTs); thermal oxidation
Sources: Web Of Science, ORCID
Added: December 22, 2023

2023 article

Looking for Some Fun in the Sun? Be a Student Volunteer!

Pavlidis, S. S. (2023, May). IEEE MICROWAVE MAGAZINE, Vol. 24, pp. 142–143.

By: S. Pavlidis n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: June 5, 2023

2023 journal article

Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor

APPLIED PHYSICS EXPRESS, 16(3).

By: S. Stein n, D. Khachariya*, S. Mita*, M. Breckenridge n, J. Tweedie*, P. Reddy*, K. Sierakowski*, G. Kamler* ...

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
author keywords: GaN; JBS diode; Schottky contact; ultra-high-pressure-annealing; ideality factor; ion implantation; barrier height
Sources: Web Of Science, ORCID
Added: April 17, 2023

2022 journal article

Design and performance analysis of GaN vertical JFETs with ion-implanted gates

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(12).

By: S. Stein*, D. Khachariya* & S. Pavlidis*

author keywords: design; GaN; TCAD; ion implantation; Mg diffusion; junction field-effect transistor (JFET); Mg activation
Source: Web Of Science
Added: November 21, 2022

2022 journal article

GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions

JOURNAL OF APPLIED PHYSICS, 131(1).

By: D. Szymanski n, D. Khachariya n, T. Eldred n, P. Bagheri n, S. Washiyama n, A. Chang*, S. Pavlidis n, R. Kirste* ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: January 4, 2022

2022 article

Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3.

By: P. Reddy*, W. Mecouch*, M. Breckenridge n, D. Khachariya n, P. Bagheri n, J. Kim n, Y. Guan n, S. Mita* ...

co-author countries: United States of America 🇺🇸
author keywords: AlGaN; APD; UVC
Sources: Web Of Science, ORCID
Added: March 11, 2022

2022 journal article

Low resistivity, p-type, N-Polar GaN achieved by chemical potential control

APPLIED PHYSICS EXPRESS, 15(8).

By: S. Rathkanthiwar n, D. Szymanski n, D. Khachariya n, P. Bagheri n, J. Kim n, S. Mita*, P. Reddy*, E. Kohn n ...

co-author countries: United States of America 🇺🇸
author keywords: N-polar GaN; p doping; compensation; chemical potential control
Sources: Web Of Science, ORCID
Added: August 8, 2022

2022 journal article

Phase transition of Al2O3-encapsulated MoTe2 via rapid thermal annealing

APPLIED PHYSICS LETTERS, 121(3).

By: R. Sengupta n, S. Dangi n, S. Krylyuk*, A. Davydov* & S. Pavlidis n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 1, 2022

2022 journal article

Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices

APPLIED PHYSICS EXPRESS, 15(5).

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: April 25, 2022

2022 journal article

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS, 120(17).

By: D. Khachariya n, S. Mita*, P. Reddy*, S. Dangi n, J. Dycus*, P. Bagheri n, M. Breckenridge n, R. Sengupta n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: May 31, 2022

2022 journal article

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

APPLIED PHYSICS EXPRESS, 15(10).

By: D. Khachariya*, S. Stein n, W. Mecouch*, M. Breckenridge n, S. Rathkanthiwar n, S. Mita*, B. Moody*, P. Reddy* ...

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
author keywords: GaN; junction barrier Schottky diode; low ON-resistance; high breakdown voltage; Mg ion implantation; ultra-high-pressure anneal
Sources: Web Of Science, ORCID
Added: October 3, 2022

2021 journal article

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

APPLIED PHYSICS LETTERS, 118(11).

By: M. Breckenridge n, P. Bagheri n, Q. Guo n, B. Sarkar n, D. Khachariya n, S. Pavlidis n, J. Tweedie*, R. Kirste* ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: March 17, 2021

2021 journal article

On the Ge shallow-to-deep level transition in Al-rich AlGaN

JOURNAL OF APPLIED PHYSICS, 130(5).

By: P. Bagheri n, P. Reddy*, S. Mita*, D. Szymanski n, J. Kim n, Y. Guan n, D. Khachariya n, A. Klump n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 4, 2021

2021 journal article

On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers

APPLIED PHYSICS LETTERS, 118(12).

By: D. Khachariya n, D. Szymanski n, M. Breckenridge n, P. Reddy*, E. Kohn n, Z. Sitar n, R. Collazo n, S. Pavlidis n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: March 24, 2021

2021 journal article

Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN

APPLIED PHYSICS LETTERS, 119(18).

By: P. Reddy*, D. Khachariya n, W. Mecouch*, M. Breckenridge n, P. Bagheri n, Y. Guan n, J. Kim n, S. Pavlidis n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: November 3, 2021

2021 article

Toward Subcutaneous Electrochemical Aptasensors for Neuropeptide Y

2021 IEEE SENSORS.

By: H. Richardson n, G. Maddocks n, K. Peterson n, M. Daniele n & S. Pavlidis n

co-author countries: United States of America 🇺🇸
author keywords: aptamer; biosensor; neuropeptide Y; flexible electronics; cyclic voltammetry; electrical impedance spectroscopy
Source: Web Of Science
Added: February 28, 2022

2021 article

UV illumination effects on AlGaN/GaN HEMTs for tunable RF oscillators

2021 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS), pp. 168–170.

By: S. Stein n, M. Robbins n, P. Reddy*, R. Collazo n & S. Pavlidis n

co-author countries: United States of America 🇺🇸
author keywords: AlGaN/GaN HEMTs; Optical Control; Illumination Effects; Oscillator
Sources: Web Of Science, ORCID
Added: July 26, 2021

2018 journal article

An Electrostatic Discharge Protection Circuit Technique for the Mitigation of Single-Event Transients in SiGe BiCMOS Technology

IEEE Transactions on Nuclear Science, 65(1), 426–431.

By: M. Cho*, I. Song*, S. Pavlidis*, Z. Fleetwood*, S. Buchner*, D. McMorrow*, P. Paki*, J. Cressler*

co-author countries: United States of America 🇺🇸
author keywords: Electrostatic discharge (ESD); pulsed laser; SiGe BiCMOS; single-event effect (SEE); single-event transient (SET); two-photon absorption (TPA)
Source: Crossref
Added: July 20, 2019

2018 article

RWW 2019-Five Colocated Conferences, Five Special Features

IEEE MICROWAVE MAGAZINE, Vol. 19, pp. 29-+.

By: S. Pavlidis n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: November 5, 2018

2018 journal article

p-n-p-Based RF Switches for the Mitigation of Single-Event Transients in a Complementary SiGe BiCMOS Platform

IEEE Transactions on Nuclear Science, 65(1), 391–398.

By: I. Song*, M. Cho*, Z. Fleetwood*, Y. Gong*, S. Pavlidis*, S. Buchner*, D. McMorrow*, P. Paki*, M. Kaynak*, J. Cressler*

co-author countries: Germany 🇩🇪 United States of America 🇺🇸
author keywords: BiCMOS; complementary SiGe (C-SiGe); inverse mode; p-n-p; pulsed laser; radiation effects; radiation hardening by design; radio frequency (RF) switch; RHBD; silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs); single-event transient (SET); single-pole single-throw (SPST); two-photon absorption (TPA)
Source: Crossref
Added: July 20, 2019

2017 journal article

ALD TiO x as a top-gate dielectric and passivation layer for InGaZnO115 ISFETs

Semiconductor Science and Technology, 32(11), 114004.

By: S. Pavlidis*, B. Bayraktaroglu*, K. Leedy*, W. Henderson*, E. Vogel* & O. Brand*

co-author countries: United States of America 🇺🇸
author keywords: InGaZnO; thin film transistor; chemical sensing; ISFET; passivation; ALD; TiOx
Source: Crossref
Added: July 20, 2019

2017 journal article

Characterization of AlGaN/GaN HEMTs Using Gate Resistance Thermometry

IEEE Transactions on Electron Devices, 64(1), 78–83.

By: G. Pavlidis*, S. Pavlidis*, E. Heller*, E. Moore*, R. Vetury & S. Graham*

co-author countries: United States of America 🇺🇸
author keywords: GaN; gate resistance thermometry (GRT); high electron-mobility transistor (HEMT); Raman spectroscopy; surface temperature indicators; thermal characterization; transient analysis
Source: Crossref
Added: July 20, 2019

2017 journal article

Direct correlation between potentiometric and impedance biosensing of antibody-antigen interactions using an integrated system

Applied Physics Letters, 111(7), 073701.

By: M. Tsai*, N. Creedon*, E. Brightbill*, S. Pavlidis*, B. Brown*, D. Gray*, N. Shields*, R. Sayers* ...

co-author countries: United Kingdom of Great Britain and Northern Ireland 🇬🇧 Ireland 🇮🇪 United States of America 🇺🇸
Source: Crossref
Added: July 20, 2019

2017 journal article

Encapsulated Organic Package Technology for Wideband Integration of Heterogeneous MMICs

IEEE Transactions on Microwave Theory and Techniques, 65(2), 438–448.

By: S. Pavlidis*, G. Alexopoulos*, A. Ulusoy*, M. Cho* & J. Papapolymerou*

co-author countries: United States of America 🇺🇸
author keywords: Encapsulation; heterogeneous integration; IC packaging; multilayer organic (MLO) package; receiver; system-on-package (SOP); wideband
Source: Crossref
Added: July 20, 2019

2016 journal article

Size-Scalable and High-Density Liquid-Metal-Based Soft Electronic Passive Components and Circuits Using Soft Lithography

Advanced Functional Materials, 27(3), 1604466.

By: M. Kim*, H. Alrowais*, S. Pavlidis* & O. Brand*

co-author countries: United States of America 🇺🇸
Source: Crossref
Added: July 20, 2019

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