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2024 journal article
Development of Direct Electron Transfer-Type Extended Gate Field Effect Transistor Enzymatic Sensors for Metabolite Detection
ANALYTICAL CHEMISTRY, 96(10), 4076–4085.
2024 journal article
Development of a glycated albumin sensor employing dual aptamer-based extended gate field effect transistors
BIOSENSORS & BIOELECTRONICS, 251.
2024 article
Enhancement-Mode AlInN/GaN High-Electron-Mobility Transistors Enabled by Thermally Oxidized Gates
Palmese, E., Xue, H., Pavlidis, S., & Wierer, J. J. (2023, December 21). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12.
2024 article
Performance of an aptamer-based neuropeptide Y potentiometric sensor: dependence on spacer molecule selection
Richardson, H., Kline, A., & Pavlidis, S. (2024, July 5). ELECTROANALYSIS.
2024 journal article
Ultrawide-Bandgap Semiconductors for High-Frequency Devices
IEEE MICROWAVE MAGAZINE, 25(10), 68–79.
2024 journal article
Wafer-bonded In<sub>0.53</sub>Ga<sub>0.47</sub>As/GaN p-n diodes with near-unity ideality factor
APPLIED PHYSICS LETTERS, 125(6).
2023 article
Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing
Stein, S. R., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., Tweedie, J., … Pavlidis, S. (2023, December 12). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12.
Contributors: S. Stein n, D. Khachariya*, W. Mecouch*, S. Mita*, P. Reddy* , J. Tweedie*, K. Sierakowski *, G. Kamler *
2023 article
Chemical Vapor Deposition of Monolayer MoS2 on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction Optoelectronics
Sengupta, R., Vaidya, S., Szymanski, D., Khachariya, D., Bockowski, M., Kamler, G., … Pavlidis, S. (2023, March 24). ACS APPLIED NANO MATERIALS, Vol. 3.
Contributors: R. Sengupta n, S. Vaidya n, D. Szymanski n, D. Khachariya*, M. Bockowski *, G. Kamler *, P. Reddy* , Z. Sitar n, R. Collazo n , n
2023 journal article
Demonstration of near-ideal Schottky contacts to Si-doped AlN
APPLIED PHYSICS LETTERS, 123(17).
Contributors: C. Quiñones n, D. Khachariya*, P. Bagheri n, P. Reddy* , S. Mita*, R. Kirste*, S. Rathkanthiwar n, J. Tweedie*
2023 article
Looking for Some Fun in the Sun? Be a Student Volunteer!
Pavlidis, S. S. (2023, May). IEEE MICROWAVE MAGAZINE, Vol. 24, pp. 142–143.
2023 journal article
Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor
APPLIED PHYSICS EXPRESS, 16(3).
Contributors: S. Stein n, D. Khachariya*, S. Mita*, M. Breckenridge n, J. Tweedie*, P. Reddy* , K. Sierakowski *, G. Kamler *
2022 journal article
Design and performance analysis of GaN vertical JFETs with ion-implanted gates
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(12).
2022 journal article
GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions
JOURNAL OF APPLIED PHYSICS, 131(1).
Contributors: D. Szymanski n, D. Khachariya n, T. Eldred n, P. Bagheri n, S. Washiyama n, A. Chang *, n, R. Kirste*
2022 article
Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates
Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3.
Contributors: P. Reddy* , W. Mecouch*, M. Hayden Breckenridge n, D. Khachariya n, P. Bagheri n, J. Hyun Kim n, Y. Guan n, S. Mita*
2022 journal article
Low resistivity, p-type, N-Polar GaN achieved by chemical potential control
APPLIED PHYSICS EXPRESS, 15(8).
Contributors: S. Rathkanthiwar n, D. Szymanski n, D. Khachariya n, P. Bagheri n, J. Kim, S. Mita*, P. Reddy* , E. Kohn n
2022 journal article
Phase transition of Al2O3-encapsulated MoTe2 via rapid thermal annealing
APPLIED PHYSICS LETTERS, 121(3).
2022 journal article
Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices
APPLIED PHYSICS EXPRESS, 15(5).
Contributors: S. Rathkanthiwar n, P. Bagheri n, D. Khachariya n, S. Mita*, n, P. Reddy* , R. Kirste*, J. Tweedie*, Z. Sitar n, R. Collazo n
2022 journal article
Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates
Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS, 120(17).
Contributors: D. Khachariya n, S. Mita*, P. Reddy* , S. Dangi n, J. Dycus*, P. Bagheri n, M. Breckenridge n, R. Sengupta n
2022 journal article
Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing
APPLIED PHYSICS EXPRESS, 15(10).
Contributors: D. Khachariya*, S. Stein n, W. Mecouch*, M. Breckenridge n, S. Rathkanthiwar n, S. Mita*, B. Moody*, P. Reddy*
2021 journal article
High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN
APPLIED PHYSICS LETTERS, 118(11).
Contributors: M. Breckenridge n, P. Bagheri n, Q. Guo n, B. Sarkar n, D. Khachariya n, n, J. Tweedie*, R. Kirste*
2021 journal article
On the Ge shallow-to-deep level transition in Al-rich AlGaN
JOURNAL OF APPLIED PHYSICS, 130(5).
Contributors: P. Bagheri n, P. Reddy n , S. Mita n, D. Szymanski n, J. Kim n, Y. Guan n, D. Khachariya n, A. Klump n
2021 journal article
On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers
APPLIED PHYSICS LETTERS, 118(12).
Contributors: D. Khachariya n, D. Szymanski n, M. Breckenridge n, P. Reddy* , E. Kohn n, Z. Sitar n, R. Collazo n , n
2021 journal article
Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN
APPLIED PHYSICS LETTERS, 119(18).
Contributors: P. Reddy* , D. Khachariya n, W. Mecouch *, M. Breckenridge n, P. Bagheri n, Y. Guan n, J. Kim n, n
2021 article
Toward Subcutaneous Electrochemical Aptasensors for Neuropeptide Y
2021 IEEE SENSORS.
2021 article
UV illumination effects on AlGaN/GaN HEMTs for tunable RF oscillators
2021 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS), pp. 168–170.
Contributors: S. Stein n, M. Robbins n, P. Reddy* , R. Collazo n & n
2018 article
RWW 2019-Five Colocated Conferences, Five Special Features
IEEE MICROWAVE MAGAZINE, Vol. 19, pp. 29-+.
2017 journal article
ALD TiO x as a top-gate dielectric and passivation layer for InGaZnO115 ISFETs
Semiconductor Science and Technology, 32(11), 114004.
2017 journal article
An Electrostatic Discharge Protection Circuit Technique for the Mitigation of Single-Event Transients in SiGe BiCMOS Technology
IEEE Transactions on Nuclear Science, 65(1), 426–431.
2017 journal article
Direct correlation between potentiometric and impedance biosensing of antibody-antigen interactions using an integrated system
Applied Physics Letters, 111(7), 073701.
2017 journal article
p-n-p-Based RF Switches for the Mitigation of Single-Event Transients in a Complementary SiGe BiCMOS Platform
IEEE Transactions on Nuclear Science, 65(1), 391–398.
2016 journal article
Characterization of AlGaN/GaN HEMTs Using Gate Resistance Thermometry
IEEE Transactions on Electron Devices, 64(1), 78–83.
2016 journal article
Encapsulated Organic Package Technology for Wideband Integration of Heterogeneous MMICs
IEEE Transactions on Microwave Theory and Techniques, 65(2), 438–448.
2016 journal article
Size-Scalable and High-Density Liquid-Metal-Based Soft Electronic Passive Components and Circuits Using Soft Lithography
Advanced Functional Materials, 27(3), 1604466.
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