Works (22)

2022 journal article

Design and performance analysis of GaN vertical JFETs with ion-implanted gates

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, ["37"](12), [""].

By: S. Stein, D. Khachariya & S. Pavlidis

Source: Web Of Science
Added: November 21, 2022

2022 journal article

GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions

JOURNAL OF APPLIED PHYSICS, ["131"](1), [""].

By: D. Szymanski, D. Khachariya, T. Eldred, P. Bagheri, S. Washiyama, A. Chang*, S. Pavlidis, R. Kirste ...

Sources: Web Of Science, ORCID
Added: January 4, 2022

2022 article

Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3, p. [""].

By: P. Reddy, W. Mecouch, M. Breckenridge*, D. Khachariya, P. Bagheri, J. Kim, Y. Guan, S. Mita ...

Sources: Web Of Science, ORCID
Added: March 11, 2022

2022 journal article

Low resistivity, p-type, N-Polar GaN achieved by chemical potential control

APPLIED PHYSICS EXPRESS, ["15"](8), [""].

By: S. Rathkanthiwar, D. Szymanski, D. Khachariya, P. Bagheri, J. Kim, S. Mita, P. Reddy, E. Kohn ...

Sources: Web Of Science, ORCID
Added: August 8, 2022

2022 journal article

Phase transition of Al2O3-encapsulated MoTe2 via rapid thermal annealing

APPLIED PHYSICS LETTERS, ["121"](3), [""].

By: R. Sengupta, S. Dangi, S. Krylyuk*, A. Davydov* & S. Pavlidis

Source: Web Of Science
Added: August 1, 2022

2022 journal article

Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices

APPLIED PHYSICS EXPRESS, ["15"](5), [""].

Sources: Web Of Science, ORCID
Added: April 25, 2022

2022 journal article

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS, ["120"](17), [""].

By: D. Khachariya, S. Mita, P. Reddy, S. Dangi, J. Dycus*, P. Bagheri, M. Breckenridge*, R. Sengupta ...

Sources: Web Of Science, ORCID
Added: May 31, 2022

2022 journal article

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

APPLIED PHYSICS EXPRESS, ["15"](10), [""].

By: D. Khachariya, S. Stein, W. Mecouch, M. Breckenridge, S. Rathkanthiwar, S. Mita, B. Moody, P. Reddy ...

Sources: Web Of Science, ORCID
Added: October 3, 2022

2021 journal article

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

APPLIED PHYSICS LETTERS, 118(11).

By: M. Breckenridge*, P. Bagheri, Q. Guo, B. Sarkar, D. Khachariya, S. Pavlidis, J. Tweedie, R. Kirste ...

Sources: Web Of Science, ORCID
Added: March 17, 2021

2021 journal article

On the Ge shallow-to-deep level transition in Al-rich AlGaN

JOURNAL OF APPLIED PHYSICS, ["130"](5), [""].

By: P. Bagheri, P. Reddy, S. Mita, D. Szymanski, J. Kim, Y. Guan, D. Khachariya, A. Klump ...

Sources: Web Of Science, ORCID
Added: August 4, 2021

2021 journal article

On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers

APPLIED PHYSICS LETTERS, 118(12).

By: D. Khachariya, D. Szymanski, M. Breckenridge*, P. Reddy, E. Kohn*, Z. Sitar, R. Collazo, S. Pavlidis

Sources: Web Of Science, ORCID
Added: March 24, 2021

2021 journal article

Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN

APPLIED PHYSICS LETTERS, ["119"](18), [""].

By: P. Reddy, D. Khachariya, W. Mecouch*, M. Breckenridge*, P. Bagheri, Y. Guan, J. Kim, S. Pavlidis ...

Sources: Web Of Science, ORCID
Added: November 3, 2021

2021 article

Toward Subcutaneous Electrochemical Aptasensors for Neuropeptide Y

2021 IEEE SENSORS, p. [""].

Source: Web Of Science
Added: February 28, 2022

2021 article

UV illumination effects on AlGaN/GaN HEMTs for tunable RF oscillators

2021 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS), pp. ["168–170"].

By: S. Stein, M. Robbins*, P. Reddy, R. Collazo & S. Pavlidis

Sources: Web Of Science, ORCID
Added: July 26, 2021

2018 journal article

An Electrostatic Discharge Protection Circuit Technique for the Mitigation of Single-Event Transients in SiGe BiCMOS Technology

IEEE Transactions on Nuclear Science, 65(1), 426–431.

By: M. Cho*, I. Song*, S. Pavlidis, Z. Fleetwood*, S. Buchner*, D. McMorrow*, P. Paki*, J. Cressler*

Source: Crossref
Added: July 20, 2019

2018 journal article

RWW 2019-Five Colocated Conferences, Five Special Features

IEEE MICROWAVE MAGAZINE, 19(7), 29-.

By: S. Pavlidis

Source: NC State University Libraries
Added: November 5, 2018

2018 journal article

p-n-p-Based RF Switches for the Mitigation of Single-Event Transients in a Complementary SiGe BiCMOS Platform

IEEE Transactions on Nuclear Science, 65(1), 391–398.

By: I. Song*, M. Cho*, Z. Fleetwood*, Y. Gong*, S. Pavlidis, S. Buchner*, D. McMorrow*, P. Paki*, M. Kaynak*, J. Cressler*

Source: Crossref
Added: July 20, 2019

2017 journal article

ALD TiO x as a top-gate dielectric and passivation layer for InGaZnO115 ISFETs

Semiconductor Science and Technology, 32(11), 114004.

By: S. Pavlidis, B. Bayraktaroglu*, K. Leedy*, W. Henderson*, E. Vogel* & O. Brand*

Source: Crossref
Added: July 20, 2019

2017 journal article

Characterization of AlGaN/GaN HEMTs Using Gate Resistance Thermometry

IEEE Transactions on Electron Devices, 64(1), 78–83.

By: G. Pavlidis*, S. Pavlidis, E. Heller*, E. Moore*, R. Vetury* & S. Graham*

Source: Crossref
Added: July 20, 2019

2017 journal article

Direct correlation between potentiometric and impedance biosensing of antibody-antigen interactions using an integrated system

Applied Physics Letters, 111(7), 073701.

By: M. Tsai*, N. Creedon*, E. Brightbill*, S. Pavlidis, B. Brown*, D. Gray*, N. Shields*, R. Sayers* ...

Source: Crossref
Added: July 20, 2019

2017 journal article

Encapsulated Organic Package Technology for Wideband Integration of Heterogeneous MMICs

IEEE Transactions on Microwave Theory and Techniques, 65(2), 438–448.

By: S. Pavlidis, G. Alexopoulos*, A. Ulusoy*, M. Cho* & J. Papapolymerou*

Source: Crossref
Added: July 20, 2019

2016 journal article

Size-Scalable and High-Density Liquid-Metal-Based Soft Electronic Passive Components and Circuits Using Soft Lithography

Advanced Functional Materials, 27(3), 1604466.

By: M. Kim*, H. Alrowais*, S. Pavlidis & O. Brand*

Source: Crossref
Added: July 20, 2019