Works (30)

Updated: April 17th, 2024 05:00

2024 journal article

Development of Direct Electron Transfer-Type Extended Gate Field Effect Transistor Enzymatic Sensors for Metabolite Detection

ANALYTICAL CHEMISTRY, 96(10), 4076–4085.

By: D. Probst n, J. Twiddy n, M. Hatada n, S. Pavlidis n, M. Daniele n & K. Sode n

UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: March 1, 2024

2024 journal article

Development of a glycated albumin sensor employing dual aptamer-based extended gate field effect transistors

BIOSENSORS & BIOELECTRONICS, 251.

By: M. Hatada n, S. Pavlidis n & K. Sode n

author keywords: Glycated albumin; Extended -gate field effect transistor; Diabetes; Glycated protein; Aptamer
TL;DR: Simple and rapid dual aptamer-based EGFET sensors to monitor GA through measuring GHSA and total HSA concentration, without the need for sample pretreatment, a mandatory step in the current standard of enzymatic GA monitoring are developed. (via Semantic Scholar)
UN Sustainable Development Goal Categories
3. Good Health and Well-being (OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: February 8, 2024

2023 article

Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing

Stein, S. R., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., Tweedie, J., … Pavlidis, S. (2023, December 12). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12.

By: S. Stein n, D. Khachariya*, W. Mecouch*, S. Mita*, P. Reddy*, J. Tweedie*, K. Sierakowski*, G. Kamler* ...

author keywords: Schottky diodes; Annealing; Ion implantation; Schottky barriers; P-n junctions; Resistance; Gallium nitride; junction barrier Schottky (JBS) diode; Mg activation; p-n diode; power semiconductor device; Schottky contact; ultrahigh-pressure annealing (UHPA); vertical GaN
Sources: Web Of Science, NC State University Libraries, ORCID
Added: January 2, 2024

2023 article

Chemical Vapor Deposition of Monolayer MoS2 on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction Optoelectronics

Sengupta, R., Vaidya, S., Szymanski, D., Khachariya, D., Bockowski, M., Kamler, G., … Pavlidis, S. (2023, March 24). ACS APPLIED NANO MATERIALS, Vol. 3.

By: R. Sengupta n, S. Vaidya n, D. Szymanski n, D. Khachariya*, M. Bockowski*, G. Kamler*, P. Reddy*, Z. Sitar n, R. Collazo n, S. Pavlidis n

author keywords: N-polar; gallium nitride; chemomechanical polishing; MoS 2; monolayer; chemical vapor deposition
Sources: Web Of Science, ORCID, NC State University Libraries
Added: March 25, 2023

2023 journal article

Demonstration of near-ideal Schottky contacts to Si-doped AlN

APPLIED PHYSICS LETTERS, 123(17).

By: C. Quinones n, D. Khachariya*, P. Bagheri n, P. Reddy*, S. Mita*, R. Kirste*, S. Rathkanthiwar n, J. Tweedie* ...

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: October 25, 2023

2023 article

Enhancement-Mode AlInN/GaN High-Electron-Mobility Transistors Enabled by Thermally Oxidized Gates

Palmese, E., Xue, H., Pavlidis, S., & Wierer, J. J. (2023, December 21). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12.

By: E. Palmese n, H. Xue n, S. Pavlidis n & J. Wierer n

author keywords: HEMTs; Logic gates; MODFETs; Oxidation; Gallium nitride; Fabrication; Threshold voltage; AlInN; enhancement mode; gallium nitride (GaN); high-electron-mobility transistors (HEMTs); thermal oxidation
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: December 22, 2023

2023 article

Looking for Some Fun in the Sun? Be a Student Volunteer!

Pavlidis, S. S. (2023, May). IEEE MICROWAVE MAGAZINE, Vol. 24, pp. 142–143.

By: S. Pavlidis n

Source: Web Of Science
Added: June 5, 2023

2023 journal article

Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor

APPLIED PHYSICS EXPRESS, 16(3).

By: S. Stein n, D. Khachariya*, S. Mita*, M. Breckenridge n, J. Tweedie*, P. Reddy*, K. Sierakowski*, G. Kamler* ...

author keywords: GaN; JBS diode; Schottky contact; ultra-high-pressure-annealing; ideality factor; ion implantation; barrier height
Sources: Web Of Science, NC State University Libraries
Added: April 17, 2023

2022 journal article

Design and performance analysis of GaN vertical JFETs with ion-implanted gates

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(12).

By: S. Stein*, D. Khachariya* & S. Pavlidis*

author keywords: design; GaN; TCAD; ion implantation; Mg diffusion; junction field-effect transistor (JFET); Mg activation
Source: Web Of Science
Added: November 21, 2022

2022 journal article

GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions

JOURNAL OF APPLIED PHYSICS, 131(1).

By: D. Szymanski n, D. Khachariya n, T. Eldred n, P. Bagheri n, S. Washiyama n, A. Chang*, S. Pavlidis n, R. Kirste* ...

Sources: Web Of Science, ORCID, NC State University Libraries
Added: January 4, 2022

2022 article

Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3.

By: P. Reddy*, W. Mecouch*, M. Breckenridge n, D. Khachariya n, P. Bagheri n, J. Kim n, Y. Guan n, S. Mita* ...

author keywords: AlGaN; APD; UVC
Sources: Web Of Science, ORCID, NC State University Libraries
Added: March 11, 2022

2022 journal article

Low resistivity, p-type, N-Polar GaN achieved by chemical potential control

APPLIED PHYSICS EXPRESS, 15(8).

By: S. Rathkanthiwar n, D. Szymanski n, D. Khachariya n, P. Bagheri n, J. Kim n, S. Mita*, P. Reddy*, E. Kohn n ...

author keywords: N-polar GaN; p doping; compensation; chemical potential control
Sources: Web Of Science, NC State University Libraries
Added: August 8, 2022

2022 journal article

Phase transition of Al2O3-encapsulated MoTe2 via rapid thermal annealing

APPLIED PHYSICS LETTERS, 121(3).

By: R. Sengupta n, S. Dangi n, S. Krylyuk*, A. Davydov* & S. Pavlidis n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 1, 2022

2022 journal article

Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices

APPLIED PHYSICS EXPRESS, 15(5).

Sources: Web Of Science, NC State University Libraries
Added: April 25, 2022

2022 journal article

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS, 120(17).

By: D. Khachariya n, S. Mita*, P. Reddy*, S. Dangi n, J. Dycus*, P. Bagheri n, M. Breckenridge n, R. Sengupta n ...

Sources: Web Of Science, NC State University Libraries
Added: May 31, 2022

2022 journal article

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

APPLIED PHYSICS EXPRESS, 15(10).

By: D. Khachariya*, S. Stein n, W. Mecouch*, M. Breckenridge n, S. Rathkanthiwar n, S. Mita*, B. Moody*, P. Reddy* ...

author keywords: GaN; junction barrier Schottky diode; low ON-resistance; high breakdown voltage; Mg ion implantation; ultra-high-pressure anneal
Sources: Web Of Science, NC State University Libraries
Added: October 3, 2022

2021 journal article

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

APPLIED PHYSICS LETTERS, 118(11).

By: M. Breckenridge n, P. Bagheri n, Q. Guo n, B. Sarkar n, D. Khachariya n, S. Pavlidis n, J. Tweedie*, R. Kirste* ...

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: March 17, 2021

2021 journal article

On the Ge shallow-to-deep level transition in Al-rich AlGaN

JOURNAL OF APPLIED PHYSICS, 130(5).

By: P. Bagheri n, P. Reddy n, S. Mita n, D. Szymanski n, J. Kim n, Y. Guan n, D. Khachariya n, A. Klump n ...

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 4, 2021

2021 journal article

On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers

APPLIED PHYSICS LETTERS, 118(12).

By: D. Khachariya n, D. Szymanski n, M. Breckenridge n, P. Reddy*, E. Kohn n, Z. Sitar n, R. Collazo n, S. Pavlidis n

Sources: Web Of Science, ORCID, NC State University Libraries
Added: March 24, 2021

2021 journal article

Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN

APPLIED PHYSICS LETTERS, 119(18).

By: P. Reddy*, D. Khachariya n, W. Mecouch*, M. Breckenridge n, P. Bagheri n, Y. Guan n, J. Kim n, S. Pavlidis n ...

Sources: Web Of Science, ORCID, NC State University Libraries
Added: November 3, 2021

2021 article

Toward Subcutaneous Electrochemical Aptasensors for Neuropeptide Y

2021 IEEE SENSORS.

By: H. Richardson n, G. Maddocks n, K. Peterson n, M. Daniele n & S. Pavlidis n

author keywords: aptamer; biosensor; neuropeptide Y; flexible electronics; cyclic voltammetry; electrical impedance spectroscopy
TL;DR: A biosensor for the detection of neuropeptide Y (NPY), a marker of stress, has been designed and tested for operation in a flexible microneedle form factor and shows a response to NPY over 400 pM to 200 nM when tested in KCl and K3[Fe(CN)6]/K4[Fe (CN) 6], and PBS. (via Semantic Scholar)
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: February 28, 2022

2021 article

UV illumination effects on AlGaN/GaN HEMTs for tunable RF oscillators

2021 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS), pp. 168–170.

By: S. Stein n, M. Robbins n, P. Reddy*, R. Collazo n & S. Pavlidis n

author keywords: AlGaN/GaN HEMTs; Optical Control; Illumination Effects; Oscillator
TL;DR: This is the first investigation of AlGaN/GaN HEMTs as optically-controlled microwave semiconductor devices for use in next-generation, high-power microwave photonics systems and measures show a modest change in S21 in the presence of UV illumination that induces internal photoconductive and photovoltaic effects. (via Semantic Scholar)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: July 26, 2021

2018 journal article

An Electrostatic Discharge Protection Circuit Technique for the Mitigation of Single-Event Transients in SiGe BiCMOS Technology

IEEE Transactions on Nuclear Science, 65(1), 426–431.

author keywords: Electrostatic discharge (ESD); pulsed laser; SiGe BiCMOS; single-event effect (SEE); single-event transient (SET); two-photon absorption (TPA)
Source: Crossref
Added: July 20, 2019

2018 article

RWW 2019-Five Colocated Conferences, Five Special Features

IEEE MICROWAVE MAGAZINE, Vol. 19, pp. 29-+.

By: S. Pavlidis n

TL;DR: It is an exciting time to be a microwave engineer, ranging from the emergence of competing semiconductor technologies to innovations in front-end topologies and systems. (via Semantic Scholar)
Source: Web Of Science
Added: November 5, 2018

2018 journal article

p-n-p-Based RF Switches for the Mitigation of Single-Event Transients in a Complementary SiGe BiCMOS Platform

IEEE Transactions on Nuclear Science, 65(1), 391–398.

author keywords: BiCMOS; complementary SiGe (C-SiGe); inverse mode; p-n-p; pulsed laser; radiation effects; radiation hardening by design; radio frequency (RF) switch; RHBD; silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs); single-event transient (SET); single-pole single-throw (SPST); two-photon absorption (TPA)
Source: Crossref
Added: July 20, 2019

2017 journal article

ALD TiO x as a top-gate dielectric and passivation layer for InGaZnO115 ISFETs

Semiconductor Science and Technology, 32(11), 114004.

By: S. Pavlidis*, B. Bayraktaroglu*, K. Leedy*, W. Henderson*, E. Vogel* & O. Brand*

author keywords: InGaZnO; thin film transistor; chemical sensing; ISFET; passivation; ALD; TiOx
Source: Crossref
Added: July 20, 2019

2017 journal article

Characterization of AlGaN/GaN HEMTs Using Gate Resistance Thermometry

IEEE Transactions on Electron Devices, 64(1), 78–83.

By: G. Pavlidis*, S. Pavlidis*, E. Heller*, E. Moore*, R. Vetury & S. Graham*

author keywords: GaN; gate resistance thermometry (GRT); high electron-mobility transistor (HEMT); Raman spectroscopy; surface temperature indicators; thermal characterization; transient analysis
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Crossref
Added: July 20, 2019

2017 journal article

Direct correlation between potentiometric and impedance biosensing of antibody-antigen interactions using an integrated system

Applied Physics Letters, 111(7), 073701.

By: M. Tsai*, N. Creedon*, E. Brightbill*, S. Pavlidis*, B. Brown*, D. Gray*, N. Shields*, R. Sayers* ...

TL;DR: A fully integrated system that combines extended gate field-effect transistor (EGFET)-based potentiometric biosensor and electrochemical impedance spectroscopy (EIS)-based biosensors has been demonstrated, enabling the sequential measurement of the same immunological binding event on the same sensing surface. (via Semantic Scholar)
Source: Crossref
Added: July 20, 2019

2017 journal article

Encapsulated Organic Package Technology for Wideband Integration of Heterogeneous MMICs

IEEE Transactions on Microwave Theory and Techniques, 65(2), 438–448.

By: S. Pavlidis*, G. Alexopoulos, A. Ulusoy, M. Cho & J. Papapolymerou

author keywords: Encapsulation; heterogeneous integration; IC packaging; multilayer organic (MLO) package; receiver; system-on-package (SOP); wideband
Source: Crossref
Added: July 20, 2019

2016 journal article

Size-Scalable and High-Density Liquid-Metal-Based Soft Electronic Passive Components and Circuits Using Soft Lithography

Advanced Functional Materials, 27(3), 1604466.

By: M. Kim*, H. Alrowais*, S. Pavlidis* & O. Brand*

Source: Crossref
Added: July 20, 2019

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