Works (18)

2022 journal article

GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions

JOURNAL OF APPLIED PHYSICS.

By: D. Szymanski, D. Khachariya, T. Eldred, P. Bagheri, S. Washiyama, A. Chang, S. Pavlidis, R. Kirste ...

Source: Web Of Science
Added: February 7, 2022

2022 article

Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS.

By: P. Reddy, W. Mecouch, M. Breckenridge, D. Khachariya, P. Bagheri, J. Kim, Y. Guan, S. Mita ...

Source: Web Of Science
Added: March 21, 2022

2022 journal article

Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices

APPLIED PHYSICS EXPRESS.

Source: Web Of Science
Added: April 25, 2022

2022 journal article

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS.

By: D. Khachariya, S. Mita, P. Reddy, S. Dangi, J. Dycus, P. Bagheri, M. Breckenridge, R. Sengupta ...

Source: Web Of Science
Added: May 31, 2022

2021 journal article

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

APPLIED PHYSICS LETTERS, 118(11).

By: M. Breckenridge, P. Bagheri, Q. Guo, B. Sarkar, D. Khachariya, S. Pavlidis, J. Tweedie, R. Kirste ...

Source: Web Of Science
Added: April 12, 2021

2021 journal article

On the Ge shallow-to-deep level transition in Al-rich AlGaN

JOURNAL OF APPLIED PHYSICS.

By: P. Bagheri, P. Reddy, S. Mita, D. Szymanski, J. Kim, Y. Guan, D. Khachariya, A. Klump ...

Source: Web Of Science
Added: September 20, 2021

2021 journal article

On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers

APPLIED PHYSICS LETTERS, 118(12).

By: D. Khachariya, D. Szymanski, M. Breckenridge, P. Reddy, E. Kohn, Z. Sitar, R. Collazo, S. Pavlidis

Source: Web Of Science
Added: April 5, 2021

2021 journal article

Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN

APPLIED PHYSICS LETTERS.

By: P. Reddy, D. Khachariya, W. Mecouch, M. Breckenridge, P. Bagheri, Y. Guan, J. Kim, S. Pavlidis ...

Source: Web Of Science
Added: December 20, 2021

2021 article

Toward Subcutaneous Electrochemical Aptasensors for Neuropeptide Y

2021 IEEE SENSORS.

Source: Web Of Science
Added: February 28, 2022

2021 article

UV illumination effects on AlGaN/GaN HEMTs for tunable RF oscillators

2021 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS).

By: S. Stein, M. Robbins, P. Reddy, R. Collazo & S. Pavlidis

Source: Web Of Science
Added: July 26, 2021

2018 journal article

An Electrostatic Discharge Protection Circuit Technique for the Mitigation of Single-Event Transients in SiGe BiCMOS Technology

IEEE Transactions on Nuclear Science, 65(1), 426–431.

By: M. Cho, I. Song, S. Pavlidis, Z. Fleetwood, S. Buchner, D. McMorrow, P. Paki, J. Cressler

Source: Crossref
Added: July 20, 2019

2018 journal article

RWW 2019-Five Colocated Conferences, Five Special Features

IEEE MICROWAVE MAGAZINE, 19(7), 29-.

By: S. Pavlidis

Source: NC State University Libraries
Added: November 5, 2018

2018 journal article

p-n-p-Based RF Switches for the Mitigation of Single-Event Transients in a Complementary SiGe BiCMOS Platform

IEEE Transactions on Nuclear Science, 65(1), 391–398.

By: I. Song, M. Cho, Z. Fleetwood, Y. Gong, S. Pavlidis, S. Buchner, D. McMorrow, P. Paki, M. Kaynak, J. Cressler

Source: Crossref
Added: July 20, 2019

2017 journal article

ALD TiO x as a top-gate dielectric and passivation layer for InGaZnO115 ISFETs

Semiconductor Science and Technology, 32(11), 114004.

By: S. Pavlidis, B. Bayraktaroglu, K. Leedy, W. Henderson, E. Vogel & O. Brand

Source: Crossref
Added: July 20, 2019

2017 journal article

Characterization of AlGaN/GaN HEMTs Using Gate Resistance Thermometry

IEEE Transactions on Electron Devices, 64(1), 78–83.

By: G. Pavlidis, S. Pavlidis, E. Heller, E. Moore, R. Vetury & S. Graham

Source: Crossref
Added: July 20, 2019

2017 journal article

Direct correlation between potentiometric and impedance biosensing of antibody-antigen interactions using an integrated system

Applied Physics Letters, 111(7), 073701.

By: M. Tsai, N. Creedon, E. Brightbill, S. Pavlidis, B. Brown, D. Gray, N. Shields, R. Sayers ...

Source: Crossref
Added: July 20, 2019

2017 journal article

Encapsulated Organic Package Technology for Wideband Integration of Heterogeneous MMICs

IEEE Transactions on Microwave Theory and Techniques, 65(2), 438–448.

By: S. Pavlidis, G. Alexopoulos, A. Ulusoy, M. Cho & J. Papapolymerou

Source: Crossref
Added: July 20, 2019

2016 journal article

Size-Scalable and High-Density Liquid-Metal-Based Soft Electronic Passive Components and Circuits Using Soft Lithography

Advanced Functional Materials, 27(3), 1604466.

By: M. Kim, H. Alrowais, S. Pavlidis & O. Brand

Source: Crossref
Added: July 20, 2019