Spyridon Pavlidis

Characterization of 4H-SiC Low Gain Avalanche Detectors (LGADs)

Yang, T., Sekely, B., Satapathy, Y., Allion, G., Barletta, P., Haber, C., … Stucci, S. (2025, August 11). Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment.

Experimental Characterization of Impact Ionization and Projection of Critical Electric Fields in High‐Al Content AlGaN

Zhu, Z., Reddy, P., Satapathy, Y., Cao, L., Xiong, J., Gutierrez, M., … Fay, P. (2025, June 24). Physica Status Solidi (a), Vol. 6.

Experimental Characterization of Impact Ionization and Projection of Critical Electric Fields in High‐Al Content AlGaN

Zhu, Z., Reddy, P., Satapathy, Y., Cao, L., Xiong, J., Gutierrez, M., … Fay, P. (2025, December 1). Physica Status Solidi (a).

Expert views of power electronics in the future high voltage power system

Pavlidis, S., Reed, L., & Morgan, M. G. (2025, November 20). Progress in Energy.

Impact of proton irradiation on 4H-SiC Low Gain Avalanche Detectors (LGADs)

Satapathy, Y., Sekely, B. J., Tishelman-Charny, A., Yang, T., Allion, G., Atar, G., … Stucci, S. (2025, December 1). Journal of Instrumentation.

Mg-annealed anode contacts to reduce the on-resistance of GaN pn diodes formed via Mg implantation and ultra-high pressure annealing

Hasan, M. A., Alessi, M., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., … Pavlidis, S. (2025, August 15). Applied Physics Express, Vol. 18.

RF Integrated Gate Driver for Ultra-fast Switching of 10 kV SiC MOSFETs

Kolli, N., Rawat, S., Das, P. P., Kokkonda, R. K., Vignesh, K. R. C., Khan, S. A., … McCabe, B. (2025, October 19).

Time Resolution Characterization of 4H-SiC LGADs With a ⁹⁰ Sr Source

Yang, T., Satapathy, Y., Sekely, B. J., Tishelman-Charny, A., Allion, G., Atar, G., … Stucci, S. (2025, December 18). IEEE Transactions on Nuclear Science.

Ultra-Fast 4H-SiC LGAD With Etched Termination and Field Plate

Yang, T., Sekely, B. J., Satapathy, Y., Allion, G., Atar, G., Barletta, P., … Tishelman-Charny, A. (2025, March 5). IEEE Electron Device Letters.

Development of Direct Electron Transfer-Type Extended Gate Field Effect Transistor Enzymatic Sensors for Metabolite Detection

Analytical Chemistry, 96(10), 4076–4085.

Development of a glycated albumin sensor employing dual aptamer-based extended gate field effect transistors

Hatada, M., Pavlidis, S., & Sode, K. (2024, February 7). Biosensors and Bioelectronics, Vol. 251.

High-current, high-voltage AlN Schottky barrier diodes

Quiñones, C. E., Khachariya, D., Reddy, P., Mita, S., Almeter, J., Bagheri, P., … Sitar, Z. (2024, September 30). Applied Physics Express, Vol. 17.

Performance of an aptamer‐based neuropeptide Y potentiometric sensor: dependence on spacer molecule selection

Richardson, H., Kline, A., & Pavlidis, S. (2024, May 31). Electroanalysis.

Ultrawide-Bandgap Semiconductors for High-Frequency Devices

Pavlidis, S., Medwig, G., & Thomas, M. (2024, September 17). IEEE Microwave Magazine, Vol. 25, pp. 68–79.

Wafer-bonded In0.53Ga0.47As/GaN p–n diodes with near-unity ideality factor

Sengupta, R., Little, B., Mita, S., Markham, K., Dycus, J. H., Stein, S., … Pavlidis, S. (2024, August 5). Applied Physics Letters.

Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing

Stein, S. R., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., Tweedie, J., … Pavlidis, S. (2023, December 12). IEEE Transactions on Electron Devices, Vol. 12, pp. 1494–1501.

Chemical Vapor Deposition of Monolayer MoS₂ on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction Optoelectronics

Sengupta, R., Vaidya, S., Szymanski, D., Khachariya, D., Bockowski, M., Kamler, G., … Pavlidis, S. (2023, March 24). ACS Applied Nano Materials, Vol. 3, pp. 5081–5086.

Demonstration of near-ideal Schottky contacts to Si-doped AlN

Quiñones, C. E., Khachariya, D., Bagheri, P., Reddy, P., Mita, S., Kirste, R., … Sitar, Z. (2023, October 23). Applied Physics Letters, Vol. 123.

Enhancement-Mode AlInN/GaN High-Electron-Mobility Transistors Enabled by Thermally Oxidized Gates

Palmese, E., Xue, H., Pavlidis, S., & Wierer, J. J. (2023, December 21). IEEE Transactions on Electron Devices, Vol. 12.

Looking for Some Fun in the Sun? Be a Student Volunteer!

Pavlidis, S. S. (2023, April 12). IEEE Microwave Magazine.

Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor

Stein, S. R., Khachariya, D., Mita, S., Breckenridge, M. H., Tweedie, J., Reddy, P., … Pavlidis, S. (2023, March 1). Applied Physics Express, Vol. 16.

Design and performance analysis of GaN vertical JFETs with ion-implanted gates

Stein, S. R., Khachariya, D., & Pavlidis, S. (2022, October 24). Semiconductor Science and Technology.

GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions

Szymanski, D., Khachariya, D., Eldred, T. B., Bagheri, P., Washiyama, S., Chang, A., … Sitar, Z. (2022, January 3). Journal of Applied Physics, Vol. 1.

Large‐Area, Solar‐Blind, Sub‐250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, February 19). Physica Status Solidi (RRL) - Rapid Research Letters, Vol. 3, p. 2100619.

Low resistivity, p-type, N-Polar GaN achieved by chemical potential control

Rathkanthiwar, S., Szymanski, D., Khachariya, D., Bagheri, P., Kim, J. H., Mita, S., … Sitar, Z. (2022, July 19). Applied Physics Express, Vol. 8.

Phase transition of Al2O3-encapsulated MoTe2 via rapid thermal annealing

Sengupta, R., Dangi, S., Krylyuk, S., Davydov, A. V., & Pavlidis, S. (2022, July 18). Applied Physics Letters.

Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices

Rathkanthiwar, S., Bagheri, P., Khachariya, D., Mita, S., Pavlidis, S., Reddy, P., … Collazo, R. (2022, April 7). Applied Physics Express, Vol. 5.

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates

Khachariya, D., Mita, S., Reddy, P., Dangi, S., Dycus, J. H., Bagheri, P., … Pavlidis, S. (2022, April 25). Applied Physics Letters, Vol. 4.

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

Khachariya, D., Stein, S., Mecouch, W., Breckenridge, M. H., Rathkanthiwar, S., Mita, S., … Sitar, Z. (2022, September 5). Applied Physics Express, Vol. 10.

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

Breckenridge, M. H., Bagheri, P., Guo, Q., Sarkar, B., Khachariya, D., Pavlidis, S., … Sitar, Z. (2021, March 15). Applied Physics Letters, Vol. 118.

On the Ge shallow-to-deep level transition in Al-rich AlGaN

Bagheri, P., Reddy, P., Mita, S., Szymanski, D., Kim, J. H., Guan, Y., … Sitar, Z. (2021, August 3). Journal of Applied Physics, Vol. 8.

On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers

Khachariya, D., Szymanski, D., Breckenridge, M. H., Reddy, P., Kohn, E., Sitar, Z., … Pavlidis, S. (2021, March 22). Applied Physics Letters, Vol. 118.

Study on avalanche breakdown and Poole–Frenkel emission in Al-rich AlGaN grown on single crystal AlN

Reddy, P., Khachariya, D., Mecouch, W., Breckenridge, M. H., Bagheri, P., Guan, Y., … Sitar, Z. (2021, November 1). Applied Physics Letters, Vol. 11.

Toward Subcutaneous Electrochemical Aptasensors for Neuropeptide Y

UV illumination effects on AlGaN/GaN HEMTs for tunable RF oscillators

Stein, S., Robbins, M., Reddy, P., Collazo, R., & Pavlidis, S. (2021, January 17). 2021 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS), pp. 168–170.

RWW 2019-Five Colocated Conferences, Five Special Features [From the Guest Editor's Desk]

Pavlidis, S. (2018, October 11). IEEE Microwave Magazine.

ALD TiO x as a top-gate dielectric and passivation layer for InGaZnO115 ISFETs

Semiconductor Science and Technology, 32(11), 114004.

An Electrostatic Discharge Protection Circuit Technique for the Mitigation of Single-Event Transients in SiGe BiCMOS Technology

IEEE Transactions on Nuclear Science, 65(1), 426–431.

Direct correlation between potentiometric and impedance biosensing of antibody-antigen interactions using an integrated system

Applied Physics Letters, 111(7), 073701.

p-n-p-Based RF Switches for the Mitigation of Single-Event Transients in a Complementary SiGe BiCMOS Platform

IEEE Transactions on Nuclear Science, 65(1), 391–398.

Characterization of AlGaN/GaN HEMTs Using Gate Resistance Thermometry

IEEE Transactions on Electron Devices, 64(1), 78–83.

Encapsulated Organic Package Technology for Wideband Integration of Heterogeneous MMICs

IEEE Transactions on Microwave Theory and Techniques, 65(2), 438–448.

Size-Scalable and High-Density Liquid-Metal-Based Soft Electronic Passive Components and Circuits Using Soft Lithography

Advanced Functional Materials, 27(3), 1604466.