Spyridon Pavlidis

Probst, D., Twiddy, J., Hatada, M., Pavlidis, S., Daniele, M., & Sode, K. (2024). Development of Direct Electron Transfer-Type Extended Gate Field Effect Transistor Enzymatic Sensors for Metabolite Detection. ANALYTICAL CHEMISTRY, 96(10), 4076–4085. https://doi.org/10.1021/acs.analchem.3c04599

Hatada, M., Pavlidis, S., & Sode, K. (2024). Development of a glycated albumin sensor employing dual aptamer-based extended gate field effect transistors. BIOSENSORS & BIOELECTRONICS, 251. https://doi.org/10.1016/j.bios.2024.116118

Stein, S. R., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., Tweedie, J., … Pavlidis, S. (2023, December 12). Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing. IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12. https://doi.org/10.1109/TED.2023.3339592

Sengupta, R., Vaidya, S., Szymanski, D., Khachariya, D., Bockowski, M., Kamler, G., … Pavlidis, S. (2023, March 24). Chemical Vapor Deposition of Monolayer MoS2 on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction Optoelectronics. ACS APPLIED NANO MATERIALS, Vol. 3. https://doi.org/10.1021/acsanm.3c00038

Quinones, C. E., Khachariya, D., Bagheri, P., Reddy, P., Mita, S., Kirste, R., … Sitar, Z. (2023). Demonstration of near-ideal Schottky contacts to Si-doped AlN. APPLIED PHYSICS LETTERS, 123(17). https://doi.org/10.1063/5.0174524

Palmese, E., Xue, H., Pavlidis, S., & Wierer, J. J. (2023, December 21). Enhancement-Mode AlInN/GaN High-Electron-Mobility Transistors Enabled by Thermally Oxidized Gates. IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12. https://doi.org/10.1109/TED.2023.3343313

Pavlidis, S. S. (2023, May). Looking for Some Fun in the Sun? Be a Student Volunteer! IEEE MICROWAVE MAGAZINE, Vol. 24, pp. 142–143. https://doi.org/10.1109/MMM.2023.3242920

Stein, S. R., Khachariya, D., Mita, S., Breckenridge, M. H., Tweedie, J., Reddy, P., … Pavlidis, S. (2023). Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor. APPLIED PHYSICS EXPRESS, 16(3). https://doi.org/10.35848/1882-0786/acc443

Stein, S. R., Khachariya, D., & Pavlidis, S. (2022). Design and performance analysis of GaN vertical JFETs with ion-implanted gates. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(12). https://doi.org/10.1088/1361-6641/ac9d00

Szymanski, D., Khachariya, D., Eldred, T. B., Bagheri, P., Washiyama, S., Chang, A., … Sitar, Z. (2022). GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions. JOURNAL OF APPLIED PHYSICS, 131(1). https://doi.org/10.1063/5.0076044

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3. https://doi.org/10.1002/pssr.202100619

Rathkanthiwar, S., Szymanski, D., Khachariya, D., Bagheri, P., Kim, J. H., Mita, S., … Sitar, Z. (2022). Low resistivity, p-type, N-Polar GaN achieved by chemical potential control. APPLIED PHYSICS EXPRESS, 15(8). https://doi.org/10.35848/1882-0786/ac8273

Sengupta, R., Dangi, S., Krylyuk, S., Davydov, A. V., & Pavlidis, S. (2022). Phase transition of Al2O3-encapsulated MoTe2 via rapid thermal annealing. APPLIED PHYSICS LETTERS, 121(3). https://doi.org/10.1063/5.0097844

Rathkanthiwar, S., Bagheri, P., Khachariya, D., Mita, S., Pavlidis, S., Reddy, P., … Collazo, R. (2022). Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices. APPLIED PHYSICS EXPRESS, 15(5). https://doi.org/10.35848/1882-0786/ac6566

Khachariya, D., Mita, S., Reddy, P., Dangi, S., Dycus, J. H., Bagheri, P., … Pavlidis, S. (2022). Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS, 120(17). https://doi.org/10.1063/5.0083966

Khachariya, D., Stein, S., Mecouch, W., Breckenridge, M. H., Rathkanthiwar, S., Mita, S., … Sitar, Z. (2022). Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing. APPLIED PHYSICS EXPRESS, 15(10). https://doi.org/10.35848/1882-0786/ac8f81

Breckenridge, M. H., Bagheri, P., Guo, Q., Sarkar, B., Khachariya, D., Pavlidis, S., … Sitar, Z. (2021). High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN. APPLIED PHYSICS LETTERS, 118(11). https://doi.org/10.1063/5.0042857

Bagheri, P., Reddy, P., Mita, S., Szymanski, D., Kim, J. H., Guan, Y., … Sitar, Z. (2021). On the Ge shallow-to-deep level transition in Al-rich AlGaN. JOURNAL OF APPLIED PHYSICS, 130(5). https://doi.org/10.1063/5.0059037

Khachariya, D., Szymanski, D., Breckenridge, M. H., Reddy, P., Kohn, E., Sitar, Z., … Pavlidis, S. (2021). On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers. APPLIED PHYSICS LETTERS, 118(12). https://doi.org/10.1063/5.0039888

Reddy, P., Khachariya, D., Mecouch, W., Breckenridge, M. H., Bagheri, P., Guan, Y., … Sitar, Z. (2021). Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN. APPLIED PHYSICS LETTERS, 119(18). https://doi.org/10.1063/5.0062831

Richardson, H., Maddocks, G., Peterson, K., Daniele, M., & Pavlidis, S. (2021). Toward Subcutaneous Electrochemical Aptasensors for Neuropeptide Y. 2021 IEEE SENSORS. https://doi.org/10.1109/SENSORS47087.2021.9639832

Stein, S., Robbins, M., Reddy, P., Collazo, R., & Pavlidis, S. (2021). UV illumination effects on AlGaN/GaN HEMTs for tunable RF oscillators. 2021 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS), pp. 168–170. https://doi.org/10.1109/RWS50353.2021.9360392

Cho, M.-K., Song, I., Pavlidis, S., Fleetwood, Z. E., Buchner, S. P., McMorrow, D., … Cressler, J. D. (2018). An Electrostatic Discharge Protection Circuit Technique for the Mitigation of Single-Event Transients in SiGe BiCMOS Technology. IEEE Transactions on Nuclear Science, 65(1), 426–431. https://doi.org/10.1109/tns.2017.2778946

Pavlidis, S. (2018). RWW 2019-Five Colocated Conferences, Five Special Features. IEEE MICROWAVE MAGAZINE, Vol. 19, pp. 29-+. https://doi.org/10.1109/MMM.2018.2862598

Song, I., Cho, M.-K., Fleetwood, Z. E., Gong, Y., Pavlidis, S., Buchner, S. P., … Cressler, J. D. (2018). p-n-p-Based RF Switches for the Mitigation of Single-Event Transients in a Complementary SiGe BiCMOS Platform. IEEE Transactions on Nuclear Science, 65(1), 391–398. https://doi.org/10.1109/tns.2017.2780120

Pavlidis, S., Bayraktaroglu, B., Leedy, K., Henderson, W., Vogel, E., & Brand, O. (2017). ALD TiO x  as a top-gate dielectric and passivation layer for InGaZnO115 ISFETs. Semiconductor Science and Technology, 32(11), 114004. https://doi.org/10.1088/1361-6641/aa8b33

Pavlidis, G., Pavlidis, S., Heller, E. R., Moore, E. A., Vetury, R., & Graham, S. (2017). Characterization of AlGaN/GaN HEMTs Using Gate Resistance Thermometry. IEEE Transactions on Electron Devices, 64(1), 78–83. https://doi.org/10.1109/ted.2016.2625264

Tsai, M.-Y., Creedon, N., Brightbill, E., Pavlidis, S., Brown, B., Gray, D. W., … Vogel, E. M. (2017). Direct correlation between potentiometric and impedance biosensing of           antibody-antigen interactions using an integrated system. Applied Physics Letters, 111(7), 073701. https://doi.org/10.1063/1.4986190

Pavlidis, S., Alexopoulos, G., Ulusoy, A. C., Cho, M.-K., & Papapolymerou, J. (2017). Encapsulated Organic Package Technology for Wideband Integration of Heterogeneous MMICs. IEEE Transactions on Microwave Theory and Techniques, 65(2), 438–448. https://doi.org/10.1109/tmtt.2016.2630067

Kim, M.-gu, Alrowais, H., Pavlidis, S., & Brand, O. (2016). Size-Scalable and High-Density Liquid-Metal-Based Soft Electronic Passive Components and Circuits Using Soft Lithography. Advanced Functional Materials, 27(3), 1604466. https://doi.org/10.1002/adfm.201604466