Shashwat Rathkanthiwar
Materials Science &Engineering
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Works (7)
2022 journal article
Doping and compensation in heavily Mg doped Al-rich AlGaN films
APPLIED PHYSICS LETTERS.
Source: Web Of Science
Added: June 20, 2022
2022 journal article
Low resistivity, p-type, N-Polar GaN achieved by chemical potential control
APPLIED PHYSICS EXPRESS.
Source: Web Of Science
Added: August 8, 2022
2022 journal article
On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters
SEMICONDUCTOR SCIENCE AND TECHNOLOGY.
Source: Web Of Science
Added: December 6, 2021
2022 journal article
On the conduction mechanism in compositionally graded AlGaN
APPLIED PHYSICS LETTERS.
aip.scitation.org (publisher PDF)
Source: Web Of Science
Added: August 29, 2022
2022 journal article
Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices
APPLIED PHYSICS EXPRESS.
Source: Web Of Science
Added: April 25, 2022
2022 journal article
Pseudomorphic growth of thick Al0.6Ga0.4N epilayers on AlN substrates
APPLIED PHYSICS LETTERS.
Source: Web Of Science
Added: May 31, 2022
2022 journal article
Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates
Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS.
Source: Web Of Science
Added: May 31, 2022
