Works (16)
Updated: November 6th, 2024 05:02
2024 personal communication
High-current, high-voltage AlN Schottky barrier diodes
Quinones, C. E., Khachariya, D., Reddy, P., Mita, S., Almeter, J., Bagheri, P., … Sitar, Z. (2024, October 1).
open access via doi.org (publisher)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: October 1, 2024
2023 journal article
Anderson transition in compositionally graded p-AlGaN
JOURNAL OF APPLIED PHYSICS, 134(19).
Contributors: n, P. Reddy* , C. Quiñones n, J. Loveless n, M. Kamiyama n, P. Bagheri n, D. Khachariya*, T. Eldred n
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation
(OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: November 16, 2023
2023 journal article
Demonstration of near-ideal Schottky contacts to Si-doped AlN
APPLIED PHYSICS LETTERS, 123(17).
Contributors: C. Quiñones n, D. Khachariya*, P. Bagheri n, P. Reddy* , S. Mita*, R. Kirste*, n, J. Tweedie*
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: October 25, 2023
2023 journal article
High conductivity in Ge-doped AlN achieved by a non-equilibrium process
APPLIED PHYSICS LETTERS, 122(14).
Contributors: P. Bagheri n, C. Quiñones-Garcia n , D. Khachariya*, J. Loveless n, Y. Guan n, n, P. Reddy* , R. Kirste*
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: April 6, 2023
2023 journal article
High p-conductivity in AlGaN enabled by polarization field engineering
APPLIED PHYSICS LETTERS, 122(15).
Contributors: n, P. Reddy* , B. Moody*, C. Quiñones-García n , P. Bagheri n, D. Khachariya*, R. Dalmau *, S. Mita*
Sources: Web Of Science, ORCID, NC State University Libraries
Added: April 19, 2023
2023 journal article
Polarization independent grating in a GaN-on-sapphire photonic integrated circuit
OPTICS EXPRESS, 31(14), 23350–23361.
Source: Web Of Science
Added: August 21, 2023
2022 article
Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates
Rathkanthiwar, S., Graziano, M. B., Tweedie, J., Mita, S., Kirste, R., Collazo, R., & Sitar, Z. (2022, October 25). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 10.
author keywords: AlGaN; AlN substrates; strain relaxation; tilt
Sources: Web Of Science, NC State University Libraries
Added: October 31, 2022
2022 journal article
Doping and compensation in heavily Mg doped Al-rich AlGaN films
APPLIED PHYSICS LETTERS, 120(8).
Contributors: P. Bagheri n, A. Klump n, S. Washiyama n, M. Hayden Breckenridge n, J. Kim n, Y. Guan n, D. Khachariya n, C. Quiñones-García n
Sources: Web Of Science, NC State University Libraries, ORCID
Added: June 20, 2022
2022 journal article
High electron mobility in AlN:Si by point and extended defect management
JOURNAL OF APPLIED PHYSICS, 132(18).
Contributors: P. Bagheri n, C. Quiñones-Garcia n , D. Khachariya n, n, P. Reddy n , R. Kirste n, S. Mita n, J. Tweedie n, R. Collazo n , Z. Sitar n
Sources: Web Of Science, ORCID, NC State University Libraries
Added: November 10, 2022
2022 journal article
Low resistivity, p-type, N-Polar GaN achieved by chemical potential control
APPLIED PHYSICS EXPRESS, 15(8).
Contributors: n, D. Szymanski n, D. Khachariya n, P. Bagheri n, J. Kim n, S. Mita*, P. Reddy* , E. Kohn n
author keywords: N-polar GaN; p doping; compensation; chemical potential control
Sources: Web Of Science, NC State University Libraries, ORCID
Added: August 8, 2022
2022 journal article
On the conduction mechanism in compositionally graded AlGaN
APPLIED PHYSICS LETTERS, 121(7).
Contributors: n, P. Bagheri n, D. Khachariya n, J. Kim n, Y. Kajikawa n, P. Reddy n , S. Mita n, R. Kirste n
Sources: Web Of Science, NC State University Libraries, ORCID
Added: August 29, 2022
2022 journal article
Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices
APPLIED PHYSICS EXPRESS, 15(5).
Contributors: n, P. Bagheri n, D. Khachariya n, S. Mita*, S. Pavlidis n, P. Reddy* , R. Kirste*, J. Tweedie*, Z. Sitar n, R. Collazo n
Sources: Web Of Science, NC State University Libraries, ORCID
Added: April 25, 2022
2022 journal article
Pseudomorphic growth of thick Al0.6Ga0.4N epilayers on AlN substrates
APPLIED PHYSICS LETTERS, 120(20).
Sources: Web Of Science, NC State University Libraries
Added: May 31, 2022
2022 journal article
Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates
Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS, 120(17).
Contributors: D. Khachariya n, S. Mita*, P. Reddy* , S. Dangi n, J. Dycus*, P. Bagheri n, M. Breckenridge n, R. Sengupta n
Sources: Web Of Science, NC State University Libraries, ORCID
Added: May 31, 2022
2022 journal article
Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing
APPLIED PHYSICS EXPRESS, 15(10).
Contributors: D. Khachariya*, S. Stein n, W. Mecouch*, M. Breckenridge n, n, S. Mita*, B. Moody*, P. Reddy*
author keywords: GaN; junction barrier Schottky diode; low ON-resistance; high breakdown voltage; Mg ion implantation; ultra-high-pressure anneal
Sources: Web Of Science, NC State University Libraries, ORCID
Added: October 3, 2022
2021 journal article
On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).
Contributors: A. Jadhav*, P. Bagheri n, A. Klump n, D. Khachariya n, S. Mita*, P. Reddy* , n, R. Kirste*
author keywords: III-nitride; Mg-doped AlGaN; ionization energy; mobility; contact resistance
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: November 6, 2021
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