Works (16)
2024 personal communication
High-current, high-voltage AlN Schottky barrier diodes
Quinones, C. E., Khachariya, D., Reddy, P., Mita, S., Almeter, J., Bagheri, P., … Sitar, Z. (2024, October 1).
open access via doi.org (publisher)2023 journal article
Anderson transition in compositionally graded p-AlGaN
JOURNAL OF APPLIED PHYSICS, 134(19).
Contributors: n, P. Reddy* , C. Quiñones n, J. Loveless n, M. Kamiyama n, P. Bagheri n, D. Khachariya*, T. Eldred n
2023 journal article
Demonstration of near-ideal Schottky contacts to Si-doped AlN
APPLIED PHYSICS LETTERS, 123(17).
Contributors: C. Quiñones n, D. Khachariya*, P. Bagheri n, P. Reddy* , S. Mita*, R. Kirste*, n, J. Tweedie*
2023 journal article
High conductivity in Ge-doped AlN achieved by a non-equilibrium process
APPLIED PHYSICS LETTERS, 122(14).
Contributors: P. Bagheri n, C. Quiñones-Garcia n , D. Khachariya*, J. Loveless n, Y. Guan n, n, P. Reddy* , R. Kirste*
2023 journal article
High p-conductivity in AlGaN enabled by polarization field engineering
APPLIED PHYSICS LETTERS, 122(15).
Contributors: n, P. Reddy* , B. Moody*, C. Quiñones-García n , P. Bagheri n, D. Khachariya*, R. Dalmau *, S. Mita*
2023 journal article
Polarization independent grating in a GaN-on-sapphire photonic integrated circuit
OPTICS EXPRESS, 31(14), 23350–23361.
2022 article
Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates
Rathkanthiwar, S., Graziano, M. B., Tweedie, J., Mita, S., Kirste, R., Collazo, R., & Sitar, Z. (2022, October 25). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 10.
2022 journal article
Doping and compensation in heavily Mg doped Al-rich AlGaN films
APPLIED PHYSICS LETTERS, 120(8).
Contributors: P. Bagheri n, A. Klump n, S. Washiyama n, M. Hayden Breckenridge n, J. Kim n, Y. Guan n, D. Khachariya n, C. Quiñones-García n
2022 journal article
High electron mobility in AlN:Si by point and extended defect management
JOURNAL OF APPLIED PHYSICS, 132(18).
Contributors: P. Bagheri n, C. Quiñones-Garcia n , D. Khachariya n, n, P. Reddy n , R. Kirste n, S. Mita n, J. Tweedie n, R. Collazo n , Z. Sitar n
2022 journal article
Low resistivity, p-type, N-Polar GaN achieved by chemical potential control
APPLIED PHYSICS EXPRESS, 15(8).
Contributors: n, D. Szymanski n, D. Khachariya n, P. Bagheri n, J. Kim n, S. Mita*, P. Reddy* , E. Kohn n
2022 journal article
On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).
Contributors: A. Jadhav*, P. Bagheri n, A. Klump n, D. Khachariya n, S. Mita*, P. Reddy* , n, R. Kirste*
2022 journal article
On the conduction mechanism in compositionally graded AlGaN
APPLIED PHYSICS LETTERS, 121(7).
Contributors: n, P. Bagheri n, D. Khachariya n, J. Kim n, Y. Kajikawa n, P. Reddy n , S. Mita n, R. Kirste n
2022 journal article
Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices
APPLIED PHYSICS EXPRESS, 15(5).
Contributors: n, P. Bagheri n, D. Khachariya n, S. Mita*, S. Pavlidis n, P. Reddy* , R. Kirste*, J. Tweedie*, Z. Sitar n, R. Collazo n
2022 journal article
Pseudomorphic growth of thick Al0.6Ga0.4N epilayers on AlN substrates
APPLIED PHYSICS LETTERS, 120(20).
2022 journal article
Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates
Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS, 120(17).
Contributors: D. Khachariya n, S. Mita*, P. Reddy* , S. Dangi n, J. Dycus*, P. Bagheri n, M. Breckenridge n, R. Sengupta n
2022 journal article
Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing
APPLIED PHYSICS EXPRESS, 15(10).
Contributors: D. Khachariya*, S. Stein n, W. Mecouch*, M. Breckenridge n, n, S. Mita*, B. Moody*, P. Reddy*