Works (18)
2025 article
AlGaN based UVC LEDs on AlN with reflective contacts
Kirste, R., Loveless, J., Almeter, J., Moody, B., Reddy, P., Rathkanthiwar, S., … Sitar, Z. (2025, March 19). (Vol. 3). Vol. 3.
2025 article
Pathway to >60% Efficiency in AlGaN‐Based Ultraviolet‐C Light‐Emitting Diodes
Loveless, J., Almeter, J., Kirste, R., Moody, B., Reddy, P., Rathkanthiwar, S., … Sitar, Z. (2025, October 28). Physica Status Solidi (a).
open access via onlinelibrary.wiley.com (publisher PDF)2024 article
High-current, high-voltage AlN Schottky barrier diodes
Quiñones, C. E., Khachariya, D., Reddy, P., Mita, S., Almeter, J., Bagheri, P., … Sitar, Z. (2024, September 30). Applied Physics Express, Vol. 17.
2023 article
Anderson transition in compositionally graded p-AlGaN
Rathkanthiwar, S., Reddy, P., Quiñones, C. E., Loveless, J., Kamiyama, M., Bagheri, P., … Sitar, Z. (2023, November 15). Journal of Applied Physics, Vol. 134.
Contributors: n, P. Reddy* , C. Quiñones n , J. Loveless n, M. Kamiyama n , P. Bagheri n, D. Khachariya*, T. Eldred n
2023 article
Demonstration of near-ideal Schottky contacts to Si-doped AlN
Quiñones, C. E., Khachariya, D., Bagheri, P., Reddy, P., Mita, S., Kirste, R., … Sitar, Z. (2023, October 23). Applied Physics Letters, Vol. 123.
Contributors: C. Quiñones n , D. Khachariya*, P. Bagheri n, P. Reddy* , S. Mita*, R. Kirste*, n, J. Tweedie*
2023 article
High conductivity in Ge-doped AlN achieved by a non-equilibrium process
Bagheri, P., Quiñones-Garcia, C., Khachariya, D., Loveless, J., Guan, Y., Rathkanthiwar, S., … Sitar, Z. (2023, April 3). Applied Physics Letters, Vol. 122.
Contributors: P. Bagheri n, C. Quiñones-Garcia n , D. Khachariya*, J. Loveless n, Y. Guan n, n, P. Reddy* , R. Kirste*
2023 article
High p-conductivity in AlGaN enabled by polarization field engineering
Rathkanthiwar, S., Reddy, P., Moody, B., Quiñones-García, C., Bagheri, P., Khachariya, D., … Sitar, Z. (2023, April 10). Applied Physics Letters, Vol. 122.
Contributors: n, P. Reddy* , B. Moody*, C. Quiñones-García n , P. Bagheri n, D. Khachariya*, R. Dalmau *, S. Mita*
2023 article
Polarization independent grating in a GaN-on-sapphire photonic integrated circuit
Suraj, N., Rathkanthiwar, S., Raghavan, S., & Selvaraja, S. K. (2023, March 31). Optics Express.
2022 article
Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates
Rathkanthiwar, S., Graziano, M. B., Tweedie, J., Mita, S., Kirste, R., Collazo, R., & Sitar, Z. (2022, October 14). Physica Status Solidi (RRL) - Rapid Research Letters, Vol. 10.
2022 article
Doping and compensation in heavily Mg doped Al-rich AlGaN films
Bagheri, P., Klump, A., Washiyama, S., Breckenridge, M. H., Kim, J. H., Guan, Y., … Sitar, Z. (2022, February 21). Applied Physics Letters, Vol. 2.
Contributors: P. Bagheri n, A. Klump n, S. Washiyama n, M. Breckenridge n, J. Kim n, Y. Guan n, D. Khachariya n, C. Quiñones-García n
2022 article
High electron mobility in AlN:Si by point and extended defect management
Bagheri, P., Quiñones-Garcia, C., Khachariya, D., Rathkanthiwar, S., Reddy, P., Kirste, R., … Sitar, Z. (2022, November 9). Journal of Applied Physics, Vol. 11.
Contributors: P. Bagheri n, C. Quiñones-Garcia n , D. Khachariya n, n, P. Reddy n , R. Kirste n, S. Mita n, J. Tweedie n, R. Collazo n , Z. Sitar n
2022 article
Low resistivity, p-type, N-Polar GaN achieved by chemical potential control
Rathkanthiwar, S., Szymanski, D., Khachariya, D., Bagheri, P., Kim, J. H., Mita, S., … Sitar, Z. (2022, July 19). Applied Physics Express, Vol. 8.
Contributors: n, D. Szymanski n, D. Khachariya n, P. Bagheri n, J. Kim n, S. Mita*, P. Reddy* , E. Kohn n
2022 article
On the conduction mechanism in compositionally graded AlGaN
Rathkanthiwar, S., Bagheri, P., Khachariya, D., Kim, J. H., Kajikawa, Y., Reddy, P., … Sitar, Z. (2022, August 15). Applied Physics Letters, Vol. 8.
Contributors: n, P. Bagheri n, D. Khachariya n, J. Kim n, Y. Kajikawa n, P. Reddy n , S. Mita n, R. Kirste n
2022 article
Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices
Rathkanthiwar, S., Bagheri, P., Khachariya, D., Mita, S., Pavlidis, S., Reddy, P., … Collazo, R. (2022, April 7). Applied Physics Express, Vol. 5.
Contributors: n, P. Bagheri n, D. Khachariya n, S. Mita*, S. Pavlidis n, P. Reddy* , R. Kirste*, J. Tweedie*, Z. Sitar n, R. Collazo n
2022 article
Pseudomorphic growth of thick Al0.6Ga0.4N epilayers on AlN substrates
Rathkanthiwar, S., Dycus, J. H., Mita, S., Kirste, R., Tweedie, J., Collazo, R., & Sitar, Z. (2022, May 16). Applied Physics Letters, Vol. 5.
2022 article
Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates
Khachariya, D., Mita, S., Reddy, P., Dangi, S., Dycus, J. H., Bagheri, P., … Pavlidis, S. (2022, April 25). Applied Physics Letters, Vol. 4.
Contributors: D. Khachariya n, S. Mita*, P. Reddy* , S. Dangi n, J. Dycus*, P. Bagheri n, M. Breckenridge n, R. Sengupta n
2022 article
Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing
Khachariya, D., Stein, S., Mecouch, W., Breckenridge, M. H., Rathkanthiwar, S., Mita, S., … Sitar, Z. (2022, September 5). Applied Physics Express, Vol. 10.
Contributors: D. Khachariya*, S. Stein n, W. Mecouch*, M. Breckenridge n, n, S. Mita*, B. Moody*, P. Reddy*
2021 article
On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters
Jadhav, A., Bagheri, P., Klump, A., Khachariya, D., Mita, S., Reddy, P., … Sarkar, B. (2021, November 5). Semiconductor Science and Technology, Vol. 1.
Contributors: A. Jadhav*, P. Bagheri n, A. Klump n, D. Khachariya n, S. Mita*, P. Reddy* , n, R. Kirste*