Shashwat Rathkanthiwar

Works (13)

Updated: August 29th, 2023 11:22

2023 journal article

High conductivity in Ge-doped AlN achieved by a non-equilibrium process

APPLIED PHYSICS LETTERS, 122(14).

By: P. Bagheri n, C. Quinones-Garcia n, D. Khachariya*, J. Loveless n, Y. Guan n, S. Rathkanthiwar n, P. Reddy*, R. Kirste* ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: April 6, 2023

2023 journal article

High p-conductivity in AlGaN enabled by polarization field engineering

APPLIED PHYSICS LETTERS, 122(15).

By: S. Rathkanthiwar n, P. Reddy*, B. Moody*, C. Quinones-Garcia n, P. Bagheri n, D. Khachariya*, R. Dalmau*, S. Mita* ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: April 19, 2023

2023 journal article

Polarization independent grating in a GaN-on-sapphire photonic integrated circuit

OPTICS EXPRESS, 31(14), 23350–23361.

By: S. Suraj, S. Rathkanthiwar n, S. Raghavan & S. Selvaraja

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 21, 2023

2022 article

Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates

Rathkanthiwar, S., Graziano, M. B., Tweedie, J., Mita, S., Kirste, R., Collazo, R., & Sitar, Z. (2022, October 25). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 10.

By: S. Rathkanthiwar n, M. Graziano n, J. Tweedie*, S. Mita*, R. Kirste*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
author keywords: AlGaN; AlN substrates; strain relaxation; tilt
Sources: Web Of Science, ORCID
Added: October 31, 2022

2022 journal article

Doping and compensation in heavily Mg doped Al-rich AlGaN films

APPLIED PHYSICS LETTERS, 120(8).

By: P. Bagheri n, A. Klump n, S. Washiyama n, M. Breckenridge n, J. Kim n, Y. Guan n, D. Khachariya n, C. Quinones-Garcia n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: June 20, 2022

2022 journal article

High electron mobility in AlN:Si by point and extended defect management

JOURNAL OF APPLIED PHYSICS, 132(18).

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: November 10, 2022

2022 journal article

Low resistivity, p-type, N-Polar GaN achieved by chemical potential control

APPLIED PHYSICS EXPRESS, 15(8).

By: S. Rathkanthiwar n, D. Szymanski n, D. Khachariya n, P. Bagheri n, J. Kim n, S. Mita*, P. Reddy*, E. Kohn n ...

co-author countries: United States of America 🇺🇸
author keywords: N-polar GaN; p doping; compensation; chemical potential control
Sources: Web Of Science, ORCID
Added: August 8, 2022

2022 journal article

On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).

By: A. Jadhav*, P. Bagheri n, A. Klump n, D. Khachariya n, S. Mita*, P. Reddy*, S. Rathkanthiwar n, R. Kirste* ...

co-author countries: India 🇮🇳 United States of America 🇺🇸
author keywords: III-nitride; Mg-doped AlGaN; ionization energy; mobility; contact resistance
Sources: Web Of Science, ORCID
Added: November 6, 2021

2022 journal article

On the conduction mechanism in compositionally graded AlGaN

APPLIED PHYSICS LETTERS, 121(7).

By: S. Rathkanthiwar n, P. Bagheri n, D. Khachariya*, J. Kim n, Y. Kajikawa*, P. Reddy*, S. Mita*, R. Kirste* ...

co-author countries: Japan 🇯🇵 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 29, 2022

2022 journal article

Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices

APPLIED PHYSICS EXPRESS, 15(5).

Sources: Web Of Science, ORCID
Added: April 25, 2022

2022 journal article

Pseudomorphic growth of thick Al0.6Ga0.4N epilayers on AlN substrates

APPLIED PHYSICS LETTERS, 120(20).

By: S. Rathkanthiwar n, J. Dycus*, S. Mita*, R. Kirste*, J. Tweedie*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: May 31, 2022

2022 journal article

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS, 120(17).

By: D. Khachariya n, S. Mita*, P. Reddy*, S. Dangi n, J. Dycus*, P. Bagheri n, M. Breckenridge n, R. Sengupta n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: May 31, 2022

2022 journal article

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

APPLIED PHYSICS EXPRESS, 15(10).

By: D. Khachariya*, S. Stein n, W. Mecouch*, M. Breckenridge n, S. Rathkanthiwar n, S. Mita*, B. Moody*, P. Reddy* ...

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
author keywords: GaN; junction barrier Schottky diode; low ON-resistance; high breakdown voltage; Mg ion implantation; ultra-high-pressure anneal
Sources: Web Of Science, ORCID
Added: October 3, 2022