Steven R. Novak

Works (5)

Updated: July 5th, 2023 15:54

2011 journal article

Impact of AlTaO Dielectric Capping on Device Performance and Reliability for Advanced Metal Gate/High-k PMOS Application

IEEE TRANSACTIONS ON ELECTRON DEVICES, 58(9), 2928–2935.

By: B. Lee n, D. Lichtenwalner n, S. Novak n & V. Misra n 

author keywords: Advanced gate stack; high-k dielectrics; V-T control; work-function modulation
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2011 journal article

Investigation of the Origin of V-T/V-FB Modulation by La2O3 Capping Layer Approaches for NMOS Application: Role of La Diffusion, Effect of Host High-k Layer, and Interface Properties

IEEE TRANSACTIONS ON ELECTRON DEVICES, 58(9), 3106–3115.

By: B. Lee n, S. Novak n, D. Lichtenwalner n, X. Yang n & V. Misra n 

author keywords: Advanced gate stack; high-k dielectrics; V-T control; work-function modulation
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2010 journal article

Platinum Nanoparticles Grown by Atomic Layer Deposition for Charge Storage Memory Applications

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 157(6), H589–H592.

By: S. Novak n, B. Lee n, X. Yang n & V. Misra n 

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7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2009 journal article

Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectric

APPLIED PHYSICS LETTERS, 94(12).

By: A. Suresh n, S. Novak n, P. Wellenius n, V. Misra n  & J. Muth n

author keywords: electron traps; gallium compounds; indium compounds; platinum; random-access storage; semiconductor materials; semiconductor thin films; thin film transistors
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2007 journal article

Characteristics of Ni/Gd FUSI for NMOS gate electrode applications

IEEE ELECTRON DEVICE LETTERS, 28(7), 555–557.

By: B. Lee n, N. Biswas n, S. Novak n & V. Misra n 

author keywords: band edge work function; fully silicided (FUSI) gate; metal gate electrodes; n-MOSFET; nickel/gadolinium (Ni/Gd); Ni-FUSI; work function extraction
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

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