Works (5)
Updated: July 5th, 2023 15:54
2011 journal article
Impact of AlTaO Dielectric Capping on Device Performance and Reliability for Advanced Metal Gate/High-k PMOS Application
IEEE TRANSACTIONS ON ELECTRON DEVICES, 58(9), 2928–2935.
author keywords: Advanced gate stack; high-k dielectrics; V-T control; work-function modulation
Sources: Web Of Science, ORCID
Added: August 6, 2018
2011 journal article
Investigation of the Origin of V-T/V-FB Modulation by La2O3 Capping Layer Approaches for NMOS Application: Role of La Diffusion, Effect of Host High-k Layer, and Interface Properties
IEEE TRANSACTIONS ON ELECTRON DEVICES, 58(9), 3106–3115.
author keywords: Advanced gate stack; high-k dielectrics; V-T control; work-function modulation
Sources: Web Of Science, ORCID
Added: August 6, 2018
2010 journal article
Platinum Nanoparticles Grown by Atomic Layer Deposition for Charge Storage Memory Applications
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 157(6), H589–H592.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: Web Of Science, ORCID
Added: August 6, 2018
2009 journal article
Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectric
APPLIED PHYSICS LETTERS, 94(12).
author keywords: electron traps; gallium compounds; indium compounds; platinum; random-access storage; semiconductor materials; semiconductor thin films; thin film transistors
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: Web Of Science, ORCID
Added: August 6, 2018
2007 journal article
Characteristics of Ni/Gd FUSI for NMOS gate electrode applications
IEEE ELECTRON DEVICE LETTERS, 28(7), 555–557.
author keywords: band edge work function; fully silicided (FUSI) gate; metal gate electrodes; n-MOSFET; nickel/gadolinium (Ni/Gd); Ni-FUSI; work function extraction
Sources: Web Of Science, ORCID
Added: August 6, 2018
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