Shane Stein

College of Engineering

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Works (3)

2022 journal article

Design and performance analysis of GaN vertical JFETs with ion-implanted gates

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(12).

By: S. Stein, D. Khachariya & S. Pavlidis

author keywords: design; GaN; TCAD; ion implantation; Mg diffusion; junction field-effect transistor (JFET); Mg activation

10.1088/1361-6641/ac9d00

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Source: Web Of Science

Added: November 21, 2022

2022 journal article

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

APPLIED PHYSICS EXPRESS, 15(10).

By: D. Khachariya, S. Stein, W. Mecouch, M. Breckenridge, S. Rathkanthiwar, S. Mita, B. Moody, P. Reddy ...

author keywords: GaN; junction barrier Schottky diode; low ON-resistance; high breakdown voltage; Mg ion implantation; ultra-high-pressure anneal

10.35848/1882-0786/ac8f81

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Sources: Web Of Science, ORCID

Added: October 3, 2022

2021 article

UV illumination effects on AlGaN/GaN HEMTs for tunable RF oscillators

2021 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS), pp. 168–170.

By: S. Stein, M. Robbinsⁿ, P. Reddy , R. Collazo & S. Pavlidis

author keywords: AlGaN/GaN HEMTs; Optical Control; Illumination Effects; Oscillator

10.1109/RWS50353.2021.9360392

Find Text @ NCSU

Sources: Web Of Science, ORCID

Added: July 26, 2021