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2022 journal article
Design and performance analysis of GaN vertical JFETs with ion-implanted gates
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(12).
2022 journal article
Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing
APPLIED PHYSICS EXPRESS, 15(10).
2021 article
UV illumination effects on AlGaN/GaN HEMTs for tunable RF oscillators
2021 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS), pp. 168–170.