Shane Stein

College of Engineering

2023 article

Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing

Stein, S. R., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., Tweedie, J., … Pavlidis, S. (2023, December 12). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12.

By: S. Stein n, D. Khachariya*, W. Mecouch*, S. Mita*, P. Reddy*, J. Tweedie n, K. Sierakowski*, G. Kamler* ...

author keywords: Schottky diodes; Annealing; Ion implantation; Schottky barriers; P-n junctions; Resistance; Gallium nitride; junction barrier Schottky (JBS) diode; Mg activation; p-n diode; power semiconductor device; Schottky contact; ultrahigh-pressure annealing (UHPA); vertical GaN
Sources: Web Of Science, ORCID
Added: January 2, 2024

2023 journal article

Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor


By: S. Stein n, D. Khachariya*, S. Mita*, M. Breckenridge n, J. Tweedie*, P. Reddy*, K. Sierakowski*, G. Kamler* ...

author keywords: GaN; JBS diode; Schottky contact; ultra-high-pressure-annealing; ideality factor; ion implantation; barrier height
Sources: Web Of Science, ORCID
Added: April 17, 2023

2022 journal article

Design and performance analysis of GaN vertical JFETs with ion-implanted gates


By: S. Stein*, D. Khachariya* & S. Pavlidis*

author keywords: design; GaN; TCAD; ion implantation; Mg diffusion; junction field-effect transistor (JFET); Mg activation
Source: Web Of Science
Added: November 21, 2022

2022 journal article

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing


By: D. Khachariya*, S. Stein n, W. Mecouch*, M. Breckenridge n, S. Rathkanthiwar n, S. Mita*, B. Moody*, P. Reddy* ...

author keywords: GaN; junction barrier Schottky diode; low ON-resistance; high breakdown voltage; Mg ion implantation; ultra-high-pressure anneal
Sources: Web Of Science, ORCID
Added: October 3, 2022

2021 article

UV illumination effects on AlGaN/GaN HEMTs for tunable RF oscillators


By: S. Stein n, M. Robbins n, P. Reddy*, R. Collazo n & S. Pavlidis n

author keywords: AlGaN/GaN HEMTs; Optical Control; Illumination Effects; Oscillator
TL;DR: This is the first investigation of AlGaN/GaN HEMTs as optically-controlled microwave semiconductor devices for use in next-generation, high-power microwave photonics systems and measures show a modest change in S21 in the presence of UV illumination that induces internal photoconductive and photovoltaic effects. (via Semantic Scholar)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID
Added: July 26, 2021

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