2023 journal article
Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor
APPLIED PHYSICS EXPRESS, 16(3).
2022 journal article
Design and performance analysis of GaN vertical JFETs with ion-implanted gates
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(12).
2022 journal article
Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing
APPLIED PHYSICS EXPRESS, 15(10).
2021 article
UV illumination effects on AlGaN/GaN HEMTs for tunable RF oscillators
2021 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS), pp. 168–170.