Shane Stein

College of Engineering

Works (4)

Updated: April 20th, 2023 05:13
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2023 journal article

Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor

APPLIED PHYSICS EXPRESS, 16(3).

By: S. Stein n, D. Khachariya*, S. Mita*, M. Breckenridge  n, J. Tweedie*, P. Reddy* , K. Sierakowski *, G. Kamler* ...

author keywords: GaN; JBS diode; Schottky contact; ultra-high-pressure-annealing; ideality factor; ion implantation; barrier height
Sources: Web Of Science, ORCID
Added: April 17, 2023

2022 journal article

Design and performance analysis of GaN vertical JFETs with ion-implanted gates

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(12).

By: S. Stein*, D. Khachariya* & S. Pavlidis*

author keywords: design; GaN; TCAD; ion implantation; Mg diffusion; junction field-effect transistor (JFET); Mg activation
Source: Web Of Science
Added: November 21, 2022

2022 journal article

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

APPLIED PHYSICS EXPRESS, 15(10).

By: D. Khachariya*, S. Stein n, W. Mecouch*, M. Breckenridge  n, S. Rathkanthiwar n, S. Mita*, B. Moody*, P. Reddy*  ...

author keywords: GaN; junction barrier Schottky diode; low ON-resistance; high breakdown voltage; Mg ion implantation; ultra-high-pressure anneal
Sources: Web Of Science, ORCID
Added: October 3, 2022

2021 article

UV illumination effects on AlGaN/GaN HEMTs for tunable RF oscillators

2021 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS), pp. 168–170.

By: S. Stein n, M. Robbins n, P. Reddy* , R. Collazo n  & S. Pavlidis n

author keywords: AlGaN/GaN HEMTs; Optical Control; Illumination Effects; Oscillator
Sources: Web Of Science, ORCID
Added: July 26, 2021