Shane Stein
College of Engineering
Works (6)
Updated: September 4th, 2024 05:00
2024 journal article
Wafer-bonded In<sub>0.53</sub>Ga<sub>0.47</sub>As/GaN p-n diodes with near-unity ideality factor
APPLIED PHYSICS LETTERS, 125(6).
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 26, 2024
2023 article
Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing
Stein, S. R., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., Tweedie, J., … Pavlidis, S. (2023, December 12). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12.
Contributors: n, D. Khachariya*, W. Mecouch*, S. Mita*, P. Reddy* , J. Tweedie*, K. Sierakowski *, G. Kamler *
author keywords: Schottky diodes; Annealing; Ion implantation; Schottky barriers; P-n junctions; Resistance; Gallium nitride; junction barrier Schottky (JBS) diode; Mg activation; p-n diode; power semiconductor device; Schottky contact; ultrahigh-pressure annealing (UHPA); vertical GaN
Sources: Web Of Science, NC State University Libraries, ORCID
Added: January 2, 2024
2023 journal article
Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor
APPLIED PHYSICS EXPRESS, 16(3).
Contributors: n, D. Khachariya*, S. Mita*, M. Breckenridge n, J. Tweedie*, P. Reddy* , K. Sierakowski *, G. Kamler *
author keywords: GaN; JBS diode; Schottky contact; ultra-high-pressure-annealing; ideality factor; ion implantation; barrier height
Sources: Web Of Science, NC State University Libraries, ORCID
Added: April 17, 2023
2022 journal article
Design and performance analysis of GaN vertical JFETs with ion-implanted gates
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(12).
author keywords: design; GaN; TCAD; ion implantation; Mg diffusion; junction field-effect transistor (JFET); Mg activation
Source: Web Of Science
Added: November 21, 2022
2022 journal article
Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing
APPLIED PHYSICS EXPRESS, 15(10).
Contributors: D. Khachariya*, n, W. Mecouch*, M. Breckenridge n, S. Rathkanthiwar n, S. Mita*, B. Moody*, P. Reddy*
author keywords: GaN; junction barrier Schottky diode; low ON-resistance; high breakdown voltage; Mg ion implantation; ultra-high-pressure anneal
Sources: Web Of Science, NC State University Libraries, ORCID
Added: October 3, 2022
2021 article
UV illumination effects on AlGaN/GaN HEMTs for tunable RF oscillators
2021 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS), pp. 168–170.
Contributors: n, M. Robbins n, P. Reddy* , R. Collazo n & S. Pavlidis n
author keywords: AlGaN/GaN HEMTs; Optical Control; Illumination Effects; Oscillator
TL;DR:
This is the first investigation of AlGaN/GaN HEMTs as optically-controlled microwave semiconductor devices for use in next-generation, high-power microwave photonics systems and measures show a modest change in S21 in the presence of UV illumination that induces internal photoconductive and photovoltaic effects.
(via Semantic Scholar)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
11. Sustainable Cities and Communities
(Web of Science)
Sources: Web Of Science, NC State University Libraries, ORCID
Added: July 26, 2021
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