Shane Stein

College of Engineering

Works (6)

Updated: September 4th, 2024 05:00

2024 article

Wafer-bonded In0.53Ga0.47As/GaN p–n diodes with near-unity ideality factor

Sengupta, R., Little, B., Mita, S., Markham, K., Dycus, J. H., Stein, S., … Pavlidis, S. (2024, August 5). Applied Physics Letters.

By: R. Sengupta n, B. Little n, S. Mita*, K. Markham n, J. Dycus*, S. Stein n, B. Wu *, Z. Sitar n, F. Kish n, S. Pavlidis n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor Quantum Structures and Devices; Semiconductor materials and devices
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 26, 2024

2023 article

Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing

Stein, S. R., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., Tweedie, J., … Pavlidis, S. (2023, December 12). IEEE Transactions on Electron Devices, Vol. 12, pp. 1494–1501.

By: S. Stein n, D. Khachariya*, W. Mecouch*, S. Mita*, P. Reddy* , J. Tweedie*, K. Sierakowski *, G. Kamler * ...

Contributors: S. Stein n, D. Khachariya*, W. Mecouch*, S. Mita*, P. Reddy* , J. Tweedie*, K. Sierakowski *, G. Kamler * ...

author keywords: Schottky diodes; Annealing; Ion implantation; Schottky barriers; P-n junctions; Resistance; Gallium nitride; junction barrier Schottky (JBS) diode; Mg activation; p-n diode; power semiconductor device; Schottky contact; ultrahigh-pressure annealing (UHPA); vertical GaN
topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Silicon Carbide Semiconductor Technologies
Sources: Web Of Science, NC State University Libraries, ORCID
Added: January 2, 2024

2023 article

Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor

Stein, S. R., Khachariya, D., Mita, S., Breckenridge, M. H., Tweedie, J., Reddy, P., … Pavlidis, S. (2023, March 1). Applied Physics Express, Vol. 16.

By: S. Stein n, D. Khachariya*, S. Mita*, M. Breckenridge n, J. Tweedie*, P. Reddy* , K. Sierakowski *, G. Kamler * ...

Contributors: S. Stein n, D. Khachariya*, S. Mita*, M. Breckenridge n, J. Tweedie*, P. Reddy* , K. Sierakowski *, G. Kamler * ...

author keywords: GaN; JBS diode; Schottky contact; ultra-high-pressure-annealing; ideality factor; ion implantation; barrier height
topics (OpenAlex): Semiconductor materials and interfaces; GaN-based semiconductor devices and materials; Semiconductor materials and devices
Sources: Web Of Science, NC State University Libraries, ORCID
Added: April 17, 2023

2022 article

Design and performance analysis of GaN vertical JFETs with ion-implanted gates

Stein, S. R., Khachariya, D., & Pavlidis, S. (2022, October 24). Semiconductor Science and Technology.

By: S. Stein*, D. Khachariya* & S. Pavlidis*

author keywords: design; GaN; TCAD; ion implantation; Mg diffusion; junction field-effect transistor (JFET); Mg activation
topics (OpenAlex): GaN-based semiconductor devices and materials; Silicon Carbide Semiconductor Technologies; Semiconductor materials and devices
Source: Web Of Science
Added: November 21, 2022

2022 article

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

Khachariya, D., Stein, S., Mecouch, W., Breckenridge, M. H., Rathkanthiwar, S., Mita, S., … Sitar, Z. (2022, September 5). Applied Physics Express, Vol. 10.

By: D. Khachariya*, S. Stein n, W. Mecouch*, M. Breckenridge n, S. Rathkanthiwar n, S. Mita*, B. Moody*, P. Reddy*  ...

Contributors: D. Khachariya*, S. Stein n, W. Mecouch*, M. Breckenridge n, S. Rathkanthiwar n, S. Mita*, B. Moody*, P. Reddy*  ...

author keywords: GaN; junction barrier Schottky diode; low ON-resistance; high breakdown voltage; Mg ion implantation; ultra-high-pressure anneal
topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Silicon Carbide Semiconductor Technologies
Sources: Web Of Science, NC State University Libraries, ORCID
Added: October 3, 2022

2021 article

UV illumination effects on AlGaN/GaN HEMTs for tunable RF oscillators

Stein, S., Robbins, M., Reddy, P., Collazo, R., & Pavlidis, S. (2021, January 17). 2021 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS), pp. 168–170.

By: S. Stein n, M. Robbins n, P. Reddy* , R. Collazo n  & S. Pavlidis n

Contributors: S. Stein n, M. Robbins n, P. Reddy* , R. Collazo n  & S. Pavlidis n

author keywords: AlGaN/GaN HEMTs; Optical Control; Illumination Effects; Oscillator
topics (OpenAlex): GaN-based semiconductor devices and materials; Radio Frequency Integrated Circuit Design; Semiconductor Quantum Structures and Devices
TL;DR: This is the first investigation of AlGaN/GaN HEMTs as optically-controlled microwave semiconductor devices for use in next-generation, high-power microwave photonics systems and measures show a modest change in S21 in the presence of UV illumination that induces internal photoconductive and photovoltaic effects. (via Semantic Scholar)
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries, ORCID
Added: July 26, 2021

Citation Index includes data from a number of different sources. If you have questions about the sources of data in the Citation Index or need a set of data which is free to re-distribute, please contact us.

Certain data included herein are derived from the Web of Science© and InCites© (2026) of Clarivate Analytics. All rights reserved. You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.