Shane Stein

College of Engineering

2022 journal article

Design and performance analysis of GaN vertical JFETs with ion-implanted gates

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(12).

By: S. Stein, D. Khachariya & S. Pavlidis

author keywords: design; GaN; TCAD; ion implantation; Mg diffusion; junction field-effect transistor (JFET); Mg activation
Source: Web Of Science
Added: November 21, 2022

2022 journal article

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

APPLIED PHYSICS EXPRESS, 15(10).

By: D. Khachariya, S. Stein, W. Mecouch, M. Breckenridge, S. Rathkanthiwar, S. Mita, B. Moody, P. Reddy ...

author keywords: GaN; junction barrier Schottky diode; low ON-resistance; high breakdown voltage; Mg ion implantation; ultra-high-pressure anneal
Sources: Web Of Science, ORCID
Added: October 3, 2022

2021 article

UV illumination effects on AlGaN/GaN HEMTs for tunable RF oscillators

2021 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS), pp. 168–170.

By: S. Stein, M. Robbins n, P. Reddy, R. Collazo & S. Pavlidis

author keywords: AlGaN/GaN HEMTs; Optical Control; Illumination Effects; Oscillator
Sources: Web Of Science, ORCID
Added: July 26, 2021