@article{singh_vignesh_narwal_narasimhan_bhattacharya_2025, title={Design and Characterization of GaN Bidirectional Switches Enabled Commutation Cell for Three-Phase Current Source Converter Applications}, DOI={10.1109/ecce58356.2025.11259925}, abstractNote={Monolithic solutions enabled by SiC BiDFETs and GaN HEMT technology, offer alternatives to the traditional discrete implementations using MOSFETs and diodes used in current source converters. The 650V GaN bidirectional switch from Transphorm is a cascode structure with a shared high voltage blocking region. This paper presents the design, implementation and characterization of a commutation cell using these bidirectional GaN switches for current source converter (CSC) applications. Static characterization is performed to measure on-state resistance and output characteristics. A four-layer PCB is designed for the commutation cell, involving three switches which result in three commutation loops. The commutation loops are simulated in Q3D for estimation of the loop inductance. In CSC applications the voltage across the switches varies through the fundamental cycle. Therefore, dynamic characteristics need to be evaluated over a wide range of voltages and currents. In this paper, double pulse test (DPT) is performed for one of the commutation loops to study the switching loss patterns as well as the switching time requirements (rise and fall time).}, author={Singh, Srijan and Vignesh, Kumar R C and Narwal, Ramandeep and Narasimhan, Sneha and Bhattacharya, Subhashish}, year={2025}, month={Oct} }