Works (18)

Updated: July 5th, 2023 15:40

2022 journal article

The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN

APPLIED PHYSICS LETTERS, 120(3).

By: K. Wang n, R. Kirste n, S. Mita*, S. Washiyama n, W. Mecouch*, P. Reddy*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: May 2, 2022

2022 journal article

Doping and compensation in heavily Mg doped Al-rich AlGaN films

APPLIED PHYSICS LETTERS, 120(8).

By: P. Bagheri n, A. Klump n, S. Washiyama n, M. Breckenridge n, J. Kim n, Y. Guan n, D. Khachariya n, C. Quinones-Garcia n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: June 20, 2022

2022 journal article

GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions

JOURNAL OF APPLIED PHYSICS, 131(1).

By: D. Szymanski n, D. Khachariya n, T. Eldred n, P. Bagheri n, S. Washiyama n, A. Chang*, S. Pavlidis n, R. Kirste* ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: January 4, 2022

2021 journal article

A pathway to highly conducting Ge-doped AlGaN

JOURNAL OF APPLIED PHYSICS, 130(20).

By: P. Bagheri n, J. Kim n, S. Washiyama n, P. Reddy*, A. Klump n, R. Kirste*, S. Mita*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: November 23, 2021

2021 journal article

Role of oxygen diffusion in the dislocation reduction of epitaxial AlN on sapphire during high-temperature annealing

JOURNAL OF APPLIED PHYSICS, 130(20).

By: L. Cancellara*, T. Markurt*, T. Schulz*, M. Albrecht*, S. Hagedorn*, S. Walde*, M. Weyers*, S. Washiyama n, R. Collazo n, Z. Sitar n

co-author countries: Germany 🇩🇪 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: December 6, 2021

2021 journal article

Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

APPLIED PHYSICS LETTERS, 118(4).

By: S. Washiyama n, K. Mirrielees n, P. Bagheri n, J. Baker n, J. Kim n, Q. Guo n, R. Kirste*, Y. Guan n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: March 29, 2021

2021 journal article

Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies

APPLIED PHYSICS LETTERS, 119(2).

By: J. Kim n, P. Bagheri n, S. Washiyama n, A. Klump n, R. Kirste*, S. Mita*, P. Reddy*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: July 26, 2021

2020 journal article

Recovery kinetics in high temperature annealed AlN heteroepitaxial films

JOURNAL OF APPLIED PHYSICS, 127(11).

By: S. Washiyama n, Y. Guan n, S. Mita*, R. Collazo n & Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: April 20, 2020

2019 article

The polarization field in Al-rich AlGaN multiple quantum wells

Guo, Q., Kirste, R., Mita, S., Tweedie, J., Reddy, P., Washiyama, S., … Sitar, Z. (2019, June 1). JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 58.

By: Q. Guo n, R. Kirste n, S. Mita n, J. Tweedie n, P. Reddy n, S. Washiyama n, M. Breckenridge n, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: July 29, 2019

2019 journal article

The role of transient surface morphology on composition control in AlGaN layers and wells

APPLIED PHYSICS LETTERS, 114(3).

By: J. Dycus n, S. Washiyama n, T. Eldred n, Y. Guan n, R. Kirste*, S. Mita*, Z. Sitar n, R. Collazo n, J. LeBeau n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: February 11, 2019

2018 journal article

A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 124(11).

By: S. Washiyama n, P. Reddy*, F. Kaess n, R. Kirste*, S. Mita*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: October 16, 2018

2018 journal article

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

APPLIED PHYSICS LETTERS, 112(6).

By: I. Bryan n, Z. Bryan n, S. Washiyama n, P. Reddy*, B. Gaddy n, B. Sarkar n, M. Breckenridge n, Q. Guo n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2018 journal article

Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(6).

By: P. Reddy n, S. Washiyama n, W. Mecouch n, L. Hernandez-Balderrama n, F. Kaess n, M. Breckenridge n, B. Sarkar n, B. Haidet n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: December 10, 2018

2017 journal article

Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN

Journal of Applied Physics, 122(24), 245702.

By: P. Reddy n, S. Washiyama n, F. Kaess n, R. Kirste*, S. Mita*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2016 journal article

Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 120(10).

By: F. Kaess n, S. Mita, J. Xie n, P. Reddy n, A. Klump n, L. Hernandez-Balderrama n, S. Washiyama n, A. Franke n ...

co-author countries: Germany 🇩🇪 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 journal article

High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

JOURNAL OF APPLIED PHYSICS, 119(14).

By: P. Reddy n, S. Washiyama n, F. Kaess n, M. Breckenridge n, L. Hernandez-Balderrama n, B. Haidet n, D. Alden n, A. Franke n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 article

Strain engineered high reflectivity DBRs in the deep UV

GALLIUM NITRIDE MATERIALS AND DEVICES XI, Vol. 9748.

By: A. Franke n, P. Hoffmann n, L. Hernandez-Balderrama n, F. Kaess n, I. Bryan n, S. Washiyama n, M. Bobea n, J. Tweedie n ...

co-author countries: United States of America 🇺🇸
author keywords: Distributed Bragg Reflector (DBR); strain relaxation; MOCVD; AlGaN; Nitride
Sources: Web Of Science, ORCID
Added: August 6, 2018

2015 journal article

Charge neutrality levels, barrier heights, and band offsets at polar AlGaN

APPLIED PHYSICS LETTERS, 107(9).

By: P. Reddy n, I. Bryan n, Z. Bryan n, J. Tweedie*, S. Washiyama n, R. Kirste n, S. Mita*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

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