Works (18)
2022 article
Doping and compensation in heavily Mg doped Al-rich AlGaN films
Bagheri, P., Klump, A., Washiyama, S., Breckenridge, M. H., Kim, J. H., Guan, Y., … Sitar, Z. (2022, February 21). Applied Physics Letters, Vol. 2.
Contributors: P. Bagheri n, A. Klump n, n, M. Breckenridge n, J. Kim n, Y. Guan n, D. Khachariya n, C. Quiñones-García n
2022 article
GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions
Szymanski, D., Khachariya, D., Eldred, T. B., Bagheri, P., Washiyama, S., Chang, A., … Sitar, Z. (2022, January 3). Journal of Applied Physics, Vol. 1.
Contributors: D. Szymanski n, D. Khachariya n, T. Eldred n, P. Bagheri n, n, A. Chang *, S. Pavlidis n, R. Kirste*
2022 article
The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN
Wang, K., Kirste, R., Mita, S., Washiyama, S., Mecouch, W., Reddy, P., … Sitar, Z. (2022, January 17). Applied Physics Letters, Vol. 1.
Contributors: K. Wang n, R. Kirste n, S. Mita n, n, W. Mecouch n, P. Reddy n , R. Collazo n , Z. Sitar n
2021 article
A pathway to highly conducting Ge-doped AlGaN
Bagheri, P., Kim, J. H., Washiyama, S., Reddy, P., Klump, A., Kirste, R., … Sitar, Z. (2021, November 22). Journal of Applied Physics, Vol. 11.
Contributors: P. Bagheri n, J. Kim n, n, P. Reddy* , A. Klump n, R. Kirste*, S. Mita*, R. Collazo n , Z. Sitar n
2021 article
Role of oxygen diffusion in the dislocation reduction of epitaxial AlN on sapphire during high-temperature annealing
Cancellara, L., Markurt, T., Schulz, T., Albrecht, M., Hagedorn, S., Walde, S., … Sitar, Z. (2021, November 22). Journal of Applied Physics, Vol. 11.
2021 article
Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping
Washiyama, S., Mirrielees, K. J., Bagheri, P., Baker, J. N., Kim, J.-H., Guo, Q., … Sitar, Z. (2021, January 25). Applied Physics Letters, Vol. 118.
Contributors: n, K. Mirrielees n, P. Bagheri n, J. Baker n, J. Kim n, Q. Guo n, R. Kirste*, Y. Guan n
2021 article
Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies
Kim, J. H., Bagheri, P., Washiyama, S., Klump, A., Kirste, R., Mita, S., … Sitar, Z. (2021, July 12). Applied Physics Letters, Vol. 7.
Contributors: J. Kim n, P. Bagheri n, n, A. Klump n, R. Kirste*, S. Mita*, P. Reddy* , R. Collazo n , Z. Sitar n
open access via aip.scitation.org (publisher PDF)
2020 article
Recovery kinetics in high temperature annealed AlN heteroepitaxial films
Washiyama, S., Guan, Y., Mita, S., Collazo, R., & Sitar, Z. (2020, March 17). Journal of Applied Physics, Vol. 127.
2019 article
The polarization field in Al-rich AlGaN multiple quantum wells
Guo, Q., Kirste, R., Mita, S., Tweedie, J., Reddy, P., Washiyama, S., … Sitar, Z. (2019, May 9). Japanese Journal of Applied Physics, Vol. 58.
Contributors: Q. Guo n, R. Kirste n, S. Mita n, J. Tweedie n, P. Reddy n , n, M. Breckenridge n, R. Collazo n , Z. Sitar n
2019 article
The role of transient surface morphology on composition control in AlGaN layers and wells
Dycus, J. H., Washiyama, S., Eldred, T. B., Guan, Y., Kirste, R., Mita, S., … LeBeau, J. M. (2019, January 21). Applied Physics Letters, Vol. 114.
2018 article
A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition
Washiyama, S., Reddy, P., Kaess, F., Kirste, R., Mita, S., Collazo, R., & Sitar, Z. (2018, September 18). Journal of Applied Physics, Vol. 124.
2018 article
Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD
Bryan, I., Bryan, Z., Washiyama, S., Reddy, P., Gaddy, B., Sarkar, B., … Sitar, Z. (2018, February 5). Applied Physics Letters, Vol. 112, p. 062102.
Contributors: I. Bryan n, Z. Bryan n, n, P. Reddy* , B. Gaddy n, B. Sarkar n, M. Breckenridge n, Q. Guo n
2018 article
Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition
Reddy, P., Washiyama, S., Mecouch, W., Hernandez-Balderrama, L. H., Kaess, F., Breckenridge, M. H., … Sitar, Z. (2018, November 1). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Vol. 36.
Contributors: P. Reddy n , n, W. Mecouch n, L. Hernandez-Balderrama n, F. Kaess n, M. Breckenridge n, B. Sarkar n, B. Haidet n
2017 article
Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN
Reddy, P., Washiyama, S., Kaess, F., Kirste, R., Mita, S., Collazo, R., & Sitar, Z. (2017, December 27). Journal of Applied Physics, Vol. 122, p. 245702.
Contributors: P. Reddy n , n, F. Kaess n, R. Kirste n, S. Mita n, R. Collazo n , Z. Sitar n
2016 article
Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition
Kaess, F., Mita, S., Xie, J., Reddy, P., Klump, A., Hernandez-Balderrama, L. H., … Sitar, Z. (2016, September 8). Journal of Applied Physics, Vol. 120, p. 105701.
2016 article
High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies
Reddy, P., Washiyama, S., Kaess, F., Breckenridge, M. H., Hernandez-Balderrama, L. H., Haidet, B. B., … Sitar, Z. (2016, April 11). Journal of Applied Physics, Vol. 119, p. 145702.
2016 article
Strain engineered high reflectivity DBRs in the deep UV
Franke, A., Hoffmann, M. P., Hernandez-Balderrama, L., Kaess, F., Bryan, I., Washiyama, S., … Sitar, Z. (2016, February 26). Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE, Vol. 9748.
2015 article
Charge neutrality levels, barrier heights, and band offsets at polar AlGaN
Reddy, P., Bryan, I., Bryan, Z., Tweedie, J., Washiyama, S., Kirste, R., … Sitar, Z. (2015, August 31). Applied Physics Letters, Vol. 107, p. 091603.