Works (11)

2020 journal article

Recovery kinetics in high temperature annealed AlN heteroepitaxial films

JOURNAL OF APPLIED PHYSICS, 127(11).

By: S. Washiyama, Y. Guan, S. Mita, R. Collazo & Z. Sitar

Source: Web Of Science
Added: April 20, 2020

2019 article

The polarization field in Al-rich AlGaN multiple quantum wells

JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 58.

By: Q. Guo, R. Kirste, S. Mita, J. Tweedie, P. Reddy, S. Washiyama, M. Breckenridge, R. Collazo, Z. Sitar

Source: Web Of Science
Added: July 29, 2019

2019 journal article

The role of transient surface morphology on composition control in AlGaN layers and wells

APPLIED PHYSICS LETTERS, 114(3).

By: J. Dycus, S. Washiyama, T. Eldred, Y. Guan, R. Kirste, S. Mita, Z. Sitar, R. Collazo, J. LeBeau

Source: NC State University Libraries
Added: February 11, 2019

2018 journal article

A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 124(11).

Source: NC State University Libraries
Added: October 16, 2018

2018 journal article

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

Applied Physics Letters, 112(6).

By: I. Bryan, Z. Bryan, S. Washiyama, P. Reddy, B. Gaddy, B. Sarkar, M. Breckenridge, Q. Guo ...

Source: NC State University Libraries
Added: August 6, 2018

2018 journal article

Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(6).

By: P. Reddy, S. Washiyama, W. Mecouch, L. Hernandez-Balderrama, F. Kaess, M. Breckenridge, B. Sarkar, B. Haidet ...

Source: NC State University Libraries
Added: December 10, 2018

2017 journal article

Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN

Journal of Applied Physics, 122(24).

By: P. Reddy, S. Washiyama, F. Kaess, R. Kirste, S. Mita, R. Collazo, Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

2016 journal article

Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition

Journal of Applied Physics, 120(10).

By: F. Kaess, S. Mita, J. Xie, P. Reddy, A. Klump, L. Hernandez-Balderrama, S. Washiyama, A. Franke ...

Source: NC State University Libraries
Added: August 6, 2018

2016 journal article

High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

Journal of Applied Physics, 119(14).

By: P. Reddy, S. Washiyama, F. Kaess, M. Breckenridge, L. Hernandez-Balderrama, B. Haidet, D. Alden, A. Franke ...

Source: NC State University Libraries
Added: August 6, 2018

2016 conference paper

Strain engineered high reflectivity DBRs in the deep UV

Gallium nitride materials and devices xi, 9748.

By: A. Franke, P. Hoffmann, L. Hernandez-Balderrama, F. Kaess, I. Bryan, S. Washiyama, M. Bobea, J. Tweedie ...

Source: NC State University Libraries
Added: August 6, 2018

2015 journal article

Charge neutrality levels, barrier heights, and band offsets at polar AlGaN

Applied Physics Letters, 107(9).

By: P. Reddy, I. Bryan, Z. Bryan, J. Tweedie, S. Washiyama, R. Kirste, S. Mita, R. Collazo, Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018