Shun Washiyama

Wang, K., Kirste, R., Mita, S., Washiyama, S., Mecouch, W., Reddy, P., … Sitar, Z. (2022). <p>The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN</p>. APPLIED PHYSICS LETTERS, 120(3). https://doi.org/10.1063/5.0077628

Bagheri, P., Klump, A., Washiyama, S., Breckenridge, M. H., Kim, J. H., Guan, Y., … Sitar, Z. (2022). Doping and compensation in heavily Mg doped Al-rich AlGaN films. APPLIED PHYSICS LETTERS, 120(8). https://doi.org/10.1063/5.0082992

Szymanski, D., Khachariya, D., Eldred, T. B., Bagheri, P., Washiyama, S., Chang, A., … Sitar, Z. (2022). GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions. JOURNAL OF APPLIED PHYSICS, 131(1). https://doi.org/10.1063/5.0076044

Bagheri, P., Kim, J. H., Washiyama, S., Reddy, P., Klump, A., Kirste, R., … Sitar, Z. (2021). A pathway to highly conducting Ge-doped AlGaN. JOURNAL OF APPLIED PHYSICS, 130(20). https://doi.org/10.1063/5.0071791

Cancellara, L., Markurt, T., Schulz, T., Albrecht, M., Hagedorn, S., Walde, S., … Sitar, Z. (2021). Role of oxygen diffusion in the dislocation reduction of epitaxial AlN on sapphire during high-temperature annealing. JOURNAL OF APPLIED PHYSICS, 130(20). https://doi.org/10.1063/5.0065935

Washiyama, S., Mirrielees, K. J., Bagheri, P., Baker, J. N., Kim, J.-H., Guo, Q., … Sitar, Z. (2021). Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping. APPLIED PHYSICS LETTERS, 118(4). https://doi.org/10.1063/5.0035957

Kim, J. H., Bagheri, P., Washiyama, S., Klump, A., Kirste, R., Mita, S., … Sitar, Z. (2021). Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies. APPLIED PHYSICS LETTERS, 119(2). https://doi.org/10.1063/5.0055409

Washiyama, S., Guan, Y., Mita, S., Collazo, R., & Sitar, Z. (2020). Recovery kinetics in high temperature annealed AlN heteroepitaxial films. JOURNAL OF APPLIED PHYSICS, 127(11). https://doi.org/10.1063/5.0002891

Guo, Q., Kirste, R., Mita, S., Tweedie, J., Reddy, P., Washiyama, S., … Sitar, Z. (2019, June 1). The polarization field in Al-rich AlGaN multiple quantum wells. JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 58. https://doi.org/10.7567/1347-4065/ab07a9

Dycus, J. H., Washiyama, S., Eldred, T. B., Guan, Y., Kirste, R., Mita, S., … LeBeau, J. M. (2019). The role of transient surface morphology on composition control in AlGaN layers and wells. APPLIED PHYSICS LETTERS, 114(3). https://doi.org/10.1063/1.5063933

Washiyama, S., Reddy, P., Kaess, F., Kirste, R., Mita, S., Collazo, R., & Sitar, Z. (2018). A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition. JOURNAL OF APPLIED PHYSICS, 124(11). https://doi.org/10.1063/1.5045058

Bryan, I., Bryan, Z., Washiyama, S., Reddy, P., Gaddy, B., Sarkar, B., … Sitar, Z. (2018). Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD. APPLIED PHYSICS LETTERS, 112(6). https://doi.org/10.1063/1.5011984

Reddy, P., Washiyama, S., Mecouch, W., Hernandez-Balderrama, L. H., Kaess, F., Breckenridge, M. H., … Sitar, Z. (2018). Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(6). https://doi.org/10.1116/1.5050501

Reddy, P., Washiyama, S., Kaess, F., Kirste, R., Mita, S., Collazo, R., & Sitar, Z. (2017). Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN. Journal of Applied Physics, 122(24), 245702. https://doi.org/10.1063/1.5002682

Kaess, F., Mita, S., Xie, J., Reddy, P., Klump, A., Hernandez-Balderrama, L. H., … Sitar, Z. (2016). Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition. JOURNAL OF APPLIED PHYSICS, 120(10). https://doi.org/10.1063/1.4962017

Reddy, P., Washiyama, S., Kaess, F., Breckenridge, M. H., Hernandez-Balderrama, L. H., Haidet, B. B., … Sitar, Z. (2016). High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies. JOURNAL OF APPLIED PHYSICS, 119(14). https://doi.org/10.1063/1.4945775

Franke, A., Hoffmann, P., Hernandez-Balderrama, L., Kaess, F., Bryan, I., Washiyama, S., … Sitar, Z. (2016). Strain engineered high reflectivity DBRs in the deep UV. GALLIUM NITRIDE MATERIALS AND DEVICES XI, Vol. 9748. https://doi.org/10.1117/12.2211700

Reddy, P., Bryan, I., Bryan, Z., Tweedie, J., Washiyama, S., Kirste, R., … Sitar, Z. (2015). Charge neutrality levels, barrier heights, and band offsets at polar AlGaN. APPLIED PHYSICS LETTERS, 107(9). https://doi.org/10.1063/1.4930026