2023 conference paper
Advanced GaN IPM for High-Frequency Converter Applications Enabled with Thin-Substrates
2023 IEEE Applied Power Electronics Conference and Exposition (APEC), 2596β2603.
Event: 2023 IEEE Applied Power Electronics Conference and Exposition (APEC)
2023 conference paper
Analysis and Characterization of Four-quadrant Switches based Commutation Cell
2023 IEEE Applied Power Electronics Conference and Exposition (APEC), 2023-March, 209β216.
Contributors: R. Narwal nβ, S. Rawat n, A. Kanale n, n, A. Agarwal n, S. Bhattacharya nβ, B. Baliga n, D. Hopkins nβ
Event: 2023 IEEE Applied Power Electronics Conference and Exposition (APEC)
2023 journal article
Power Conversion Systems Enabled by SiC BiDFET Device
IEEE POWER ELECTRONICS MAGAZINE, 10(1), 39β43.
Contributors: S. Bhattacharya nβ, R. Narwal nβ, S. Shah*, B. Baliga n, A. Agarwal*, A. Kanale n, K. Han*, D. Hopkins nβ, n
2023 journal article
The BiDFET Device and Its Impact on Converters
IEEE POWER ELECTRONICS MAGAZINE, 10(1), 20β27.
Contributors: B. Baliga n, D. Hopkins nβ, S. Bhattacharya nβ, A. Agarwal*, n, R. Narwal nβ, A. Kanale n, S. Shah, K. Han*
2022 article proceedings
Design Considerations for Developing 1.2 kV 4H-SiC BiDFET-enabled Power Conversion Systems
Presented at the 2022 IEEE Energy Conversion Congress and Exposition (ECCE).
Contributors: A. Kanale n, n, R. Narwal nβ, A. Agarwal n, B. Baliga n, S. Bhattacharya nβ, D. Hopkins nβ
Event: 2022 IEEE Energy Conversion Congress and Exposition (ECCE)
2021 conference paper
Comparison of the Capacitances and Switching Losses of 1.2 kV Common-Source and Common- Drain Bidirectional Switch Topologies
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 112β117.
Event: 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) at Redondo Beach, CA, USA on November 7-11, 2021
2021 article
Optimized AC/DC Dual Active Bridge Converter using Monolithic SiC Bidirectional FET (BiDFET) for Solar PV Applications
2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), pp. 568β575.
Contributors: S. Shah n, R. Narwal nβ, S. Bhattacharya nβ, A. Kanale n, n, U. Mehrotra n, A. Agarwal n, B. Baliga n, D. Hopkins nβ
2021 conference paper
Switching Characteristics of a 1.2 kV, 50 mΞ© SiC Monolithic Bidirectional Field Effect Transistor (BiDFET) with Integrated JBS Diodes
2021 IEEE Applied Power Electronics Conference and Exposition (APEC), 1267β1274.
Event: 2021 IEEE Applied Power Electronics Conference and Exposition (APEC)
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