Tania Milkova Paskova

On the thermal conductivity anisotropy in wurtzite GaN

AIP ADVANCES, 13(9).

Erratum: "Phonon-boundary scattering and thermal transport in AlxGa1<bold>-</bold>xN: Effect of layer thickness" [Appl. Phys. Lett. <bold>117</bold>, 252102 (2020)]

Tran, D. Q., Delgado-Carrascon, R., Muth, J. F., Paskova, T., Nawaz, M., Darakchieva, V., & Paskov, P. P. (2021, May 3). APPLIED PHYSICS LETTERS, Vol. 118.

Dielectric and conducting properties of unintentionally and Sn-doped beta-Ga2O3 studied by terahertz spectroscopy

JOURNAL OF APPLIED PHYSICS, 127(16).

Phonon-boundary scattering and thermal transport in AlxGa1-xN: Effect of layer thickness

APPLIED PHYSICS LETTERS, 117(25).

Self-Heating Characterization of $\beta$ -Ga2O3 Thin-Channel MOSFETs by Pulsed ${I}$ - ${V}$ and Raman Nanothermography

IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(1), 204–211.

Thermal conductivity of ultra-wide bandgap thin layers - High Al-content AlGaN and beta-Ga2O3

Tran, D. Q., Blumenschein, N., Mock, A., Sukkaew, P., Zhang, H., Muth, J. F., … Darakchieva, V. (2020, February 15). PHYSICA B-CONDENSED MATTER, Vol. 579.

Effect of Growth Pressure on PLD-Deposited Gallium Oxide Thin Films for Deep-UV Photodetectors

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 216(20).

Modification of the Surface Properties of AlxGa1-xN Substrates with Gradient Aluminum Composition Using Wet Chemical Treatments

ACS OMEGA, 4(7), 11760–11769.

Nanostructured GaOOH modified with reactive yellow, red and blue water-soluble dyes

AIP ADVANCES, 9(2).

Passivation of semipolar (10-1-1) GaN with different organic adsorbates

MATERIALS LETTERS, 236, 201–204.

Thermal conductivity of bulk and thin film beta-Ga2O3 measured by the 3 omega technique

OXIDE-BASED MATERIALS AND DEVICES IX, Vol. 10533.

Anisotropic thermal conductivity of beta-Ga2O3 at elevated temperatures: Effect of Sn and Fe dopants

JOURNAL OF APPLIED PHYSICS, 121(23).

Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures - theory and experiment

AIP ADVANCES, 7(9).

Electron band bending and surface sensitivity: X-ray photoelectron spectroscopy of polar GaN surfaces

SURFACE SCIENCE, 664, 241–245.

Thermal conductivity of bulk GaN grown by HVPE: Effect of Si doping

Slomski, M., Paskov, P. P., Leach, J. H., Muth, J. F., & Paskova, T. (2017, August). PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 254.

Tuning the biocompatibility of aluminum nitride

MATERIALS LETTERS, 189, 1–4.

Electron band bending of polar, semipolar and non-polar GaN surfaces

JOURNAL OF APPLIED PHYSICS, 119(10).

Erratum: “Electron band bending of polar, semipolar and non-polar GaN surfaces” [J. Appl. Phys. 119, 105303 (2016)]

Journal of Applied Physics, 119(15), 159901.

GaN quantum dot polarity determination by X-ray photoelectron diffraction

APPLIED SURFACE SCIENCE, 389, 1156–1160.

Preface

Qiu, R., Caneau, C., & Paskova, T. (2016, October 15). JOURNAL OF CRYSTAL GROWTH, Vol. 452, pp. VIII-VIII.

Preface: Bulk nitride workshop 2015

Freitas, J. A., Jr., Paskova, T., Bockowski, M., & Fujioka, H. (2016, December 15). JOURNAL OF CRYSTAL GROWTH, Vol. 456, pp. 1–1.

A review of in situ surface functionalization of gallium nitride via beaker wet chemistry

[Review of ]. JOURNAL OF MATERIALS RESEARCH, 30(19), 2859–2870.

Comparison of the Stability of Functionalized GaN and GaP

CHEMPHYSCHEM, 16(8), 1687–1694.

Modified surface chemistry, potential, and optical properties of polar gallium nitride via long chained phosphonic acids

APPLIED SURFACE SCIENCE, 327, 498–503.

Modulated optical sensitivity with nanostructured gallium nitride

APPLIED PHYSICS LETTERS, 106(15).

NITRIDES AND OXYNITRIDE MATERIALS Introduction

Redwing, J., Lences, Z., Xie, R.-J., & Paskova, T. (2015, October 14). JOURNAL OF MATERIALS RESEARCH, Vol. 30, pp. 2845–2845.

Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction

APPLIED PHYSICS LETTERS, 106(2).

Polarity of GaN with polar {0001} and semipolar {10(1)over-bar1}, {20(2)over-bar1}, {11(2)over-bar2} orientations by x-ray photoelectron diffraction

JOURNAL OF MATERIALS RESEARCH, 30(19), 2881–2892.

In Situ Chemical Functionalization of Gallium Nitride with Phosphonic Acid Derivatives during Etching

Langmuir, 30(8), 2038–2046.

Modulated optical properties of nonpolar gallium nitride via surface in-situ functionalization with cysteamine assisted phosphoric acid

APPLIED SURFACE SCIENCE, 295, 207–213.

Molecular Interactions on InxGa1−xN

In G. Shaw III, B. C. Prorok, L. V. Starman, & C. Furlong (Eds.), MEMS and Nanotechnology (pp. 109–114).

Polarity of semipolar wurtzite crystals: X-ray photoelectron diffraction from GaN{10(1)over-bar1} and GaN{20(2)over-bar1} surfaces

JOURNAL OF APPLIED PHYSICS, 116(10).

Preface

Freitas, J. A., Jr., Meissner, E., Paskova, T., & Miyake, H. (2014, October 1). JOURNAL OF CRYSTAL GROWTH, Vol. 403, pp. 1–2.

Site-specific comparisons of V-defects and threading dislocations in InGaN/GaN multi-quantum-wells grown on SiC and GaN substrates

Journal of Crystal Growth, 387, 16–22.

Surface Characterization of Gallium Nitride Modified with Peptides before and after Exposure to Ionizing Radiation in Solution

Langmuir, 30(51), 15477–15485.

The 19th American Conference on Crystal Growth and Epitaxy in conjunction with The 16th US Biennial Workshop on Organometallic Vapor Phase Epitaxy Preface

Bliss, D., Dupuis, R., Wang, C., Paskova, T., Qiu, R., Bhat, R., & Caneau, C. (2014, May 1). JOURNAL OF CRYSTAL GROWTH, Vol. 393, pp. 1–1.

Thermal conductivity and dielectric properties of a TiO2-based electrical insulator for use with high temperature superconductor-based magnets

SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 27(9).

Biomolecular Gradients via Semiconductor Gradients: Characterization of Amino Acid Adsorption to InxGa1–xN Surfaces

ACS Applied Materials & Interfaces, 5(15), 7236–7243.

Effect of etching with cysteamine assisted phosphoric acid on gallium nitride surface oxide formation

JOURNAL OF APPLIED PHYSICS, 114(6).

GaN polarity determination by photoelectron diffraction

APPLIED PHYSICS LETTERS, 103(9).

Multifacet semipolar formation by controlling the groove depth via lateral sidewall epitaxy

JOURNAL OF CRYSTAL GROWTH, 367, 88–93.

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

APPLIED PHYSICS LETTERS, 103(19).

Spectroscopic investigation of coupling among asymmetric InGaN/GaN multiple quantum wells grown on non-polar a-plane GaN substrates

APPLIED PHYSICS LETTERS, 103(18).

Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates

Journal of Crystal Growth, 380, 14–17.

Anisotropy of free-carrier absorption and diffusivity in m-plane GaN

Applied Physics Letters, 100(2), 022112.

Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe

Applied Physics Letters, 100(3), 031908.

Cathodoluminescence imaging for the determination of dislocation density in differently doped HVPE GaN

Journal of Crystal Growth, 340(1), 78–82.

Charge transfer in semi-insulating Fe-doped GaN

JOURNAL OF APPLIED PHYSICS, 112(1).

Electrical and optical properties of bulk GaN substrates studied by Kelvin probe and photoluminescence

Physica Status Solidi (c), 10(3), 536–539.

Fish scale terrace GaInN/GaN light-emitting diodes with enhanced light extraction

Applied Physics Letters, 101(23), 232106.

Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 209(3), 559–564.

Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates

JOURNAL OF CRYSTAL GROWTH, 340(1), 66–73.

Microstructure of epitaxial GaN films grown on chemomechanically polished GaN(0001) substrates

Journal of Crystal Growth, 347(1), 88–94.

Near-Infrared Absorption in Lattice-Matched AlInN/GaN and Strained AlGaN/GaN Heterostructures Grown by MBE on Low-Defect GaN Substrates

Journal of Electronic Materials, 41(5), 881–886.

Overgrowth of GaN on GaN nanowires produced by mask-less etching

Frajtag, P., Hosalli, A. M., Samberg, J. P., Colter, P. C., Paskova, T., El-Masry, N. A., & Bedair, S. M. (2012, August 1). JOURNAL OF CRYSTAL GROWTH, Vol. 352, pp. 203–208.

Quantitative low-energy electron diffraction analysis of the GaN (1×1) reconstruction

Surface Science, 606(7-8), 740–743.

Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates

IEEE ELECTRON DEVICE LETTERS, 33(3), 366–368.

Characterization of freestanding semi-insulating Fe-doped GaN by photoluminescence and electromodulation spectroscopy

JOURNAL OF APPLIED PHYSICS, 109(12).

Dielectric response functions of the (0001¯), (101¯3) GaN single crystalline and disordered surfaces studied by reflection electron energy loss spectroscopy

Journal of Applied Physics, 110(4), 043507.

Dual temperature process for reduction in regrowth interfacial charge in AlGaN/GaN HEMTs grown on GaN substrates

Physica Status Solidi (c), 8(7-8), 2053–2055.

Electrical characteristics of the vertical GaN rectifiers fabricated on bulk GaN wafer

Physica Status Solidi (c), 8(7-8), 2430–2432.

On the reduction of efficiency loss in polar c -plane and non-polar m -plane InGaN light emitting diodes

Physica Status Solidi (c), 8(5), 1560–1563.

Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

Physica Status Solidi (a), 208(7), 1532–1534.

Radial space-charge-limited electron flow in semi-insulating GaN:Fe

Journal of Applied Physics, 110(1), 013723.

Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates

Applied Physics Letters, 96(10), 102109.

Cyan and green light emitting diode on non-polar m -plane GaN bulk substrate

Physica Status Solidi (c), 7(7-8), 2190–2192.

Effect of Fe doping on optical properties of freestanding semi-insulating HVPE GaN:Fe

Journal of Crystal Growth, 312(8), 1205–1209.

Effect of Fe doping on the terahertz conductivity of GaN single crystals

Journal of Physics D: Applied Physics, 43(14), 145401.

Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates

Applied Physics Letters, 96(13), 133505.

Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth

JOURNAL OF CRYSTAL GROWTH, 312(7), 902–905.

InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes

Applied Physics Letters, 97(3), 031110.

In Situ Raman Analysis of a Bulk GaN-Based Schottky Rectifier Under Operation

Journal of Electronic Materials, 39(10), 2237–2242.

Mg-related acceptors in GaN

Physica Status Solidi (c), 7(7-8), 1850–1852.

Optimization of homoepitaxially grown AlGaN/GaN heterostructures

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 207(10), 2292–2299.

Physical Properties of AlGaN/GaN Heterostructures Grown on Vicinal Substrates

Journal of Electronic Materials, 39(5), 504–516.

Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures

Solid-State Electronics, 54(11), 1470–1473.

Radiation-induced defects in GaN

Physica Scripta, T141, 014015.

Revealing extended defects in HVPE-grown GaN

Journal of Crystal Growth, 312(18), 2611–2615.

The effect of ballistic and quasi-ballistic electrons on the efficiency droop of InGaN light emitting diodes

Physica Status Solidi (RRL) - Rapid Research Letters, 4(8-9), 194–196.

Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate

Semiconductor Science and Technology, 26(2), 022002.

Various misfit dislocations in green and yellow GaInN/GaN light emitting diodes

Physica Status Solidi (a), 207(6), 1305–1308.

Wavelength-stable cyan and green light emitting diodes on nonpolar m-plane GaN bulk substrates

Applied Physics Letters, 96(5), 051101.

Cathodoluminescence evaluation of subsurface damage in GaN substrate after polishing

Physica Status Solidi (c), 6(S2), S325–S328.

Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes

Applied Physics Letters, 95(12), 121107.

Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates

JOURNAL OF APPLIED PHYSICS, 106(11).

Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN

Applied Physics Letters, 95(10), 101106.

Modulation of mobility in homoepitaxially-grown AlGaN/GaN heterostructures

Physica Status Solidi (c), 6(S2), S1037–S1040.

On carrier spillover in c- and m-plane InGaN light emitting diodes

Applied Physics Letters, 95(20), 201113.

Optical characterization of bulk GaN substrates with c -, a -, and m -plane surfaces

Physica Status Solidi (c), 6(S2), S763–S766.

Polar and nonpolar HVPE GaN substrates: impact of doping on the structural, electrical and optical characteristics

Physica Status Solidi (c), 6(S2), S344–S347.

Development and prospects of nitride materials and devices with nonpolar surfaces

Physica Status Solidi (b), 245(6), 1011–1025.

Enlargement of bulk non-polar GaN substrates by HVPE regrowth

Physica Status Solidi (c), 5(6), 1886–1888.

Fabrication and characterization of native non-polar GaN substrates

Journal of Crystal Growth, 310(17), 3953–3956.

Green light emitting diodes on a-plane GaN bulk substrates

Applied Physics Letters, 92(24), 241109.

Bending in HVPE grown GaN films: origin and reduction possibilities

Physica Status Solidi (c), 4(7), 2256–2259.

Defect distribution in a-plane GaN on Al2O3

Applied Physics Letters, 90(12), 121915.

Defect structure ofa-plane GaN grown by hydride and metal-organic vapor phase epitaxy onr-plane sapphire

Physica Status Solidi (c), 4(7), 2564–2567.

Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers

Journal of Crystal Growth, 300(1), 233–238.

Effect of sapphire-substrate thickness on the curvature of thick GaN films grown by hydride vapor phase epitaxy

Journal of Applied Physics, 102(12), 123507.

Interfacial structure of a-plane GaN grown on r-plane sapphire

Applied Physics Letters, 90(8), 081918.

Metastability of the UV luminescence in Mg-doped GaN layers grown by MOVPE on quasi-bulk GaN templates

Physica B: Condensed Matter, 401-402, 302–306.

Nonpolara- andm-plane bulk GaN sliced from boules: structural and optical characteristics

Physica Status Solidi (c), 4(7), 2536–2539.

Phonons in strained AlGaN/GaN superlattices

Physica Status Solidi (c), 4(1), 170–174.

Vacancy defect distribution in heteroepitaxial -plane GaN grown by hydride vapor phase epitaxy

Journal of Crystal Growth, 300(1), 251–253.

Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry ona-plane GaN

Physica Status Solidi (b), 243(7), 1594–1598.

Bending in HVPE GaN free-standing films: effects of laser lift-off, polishing and high-pressure annealing

Physica Status Solidi (c), 3(6), 1475–1478.

Dissociation of VGa–ON complexes in HVPE GaN by high pressure and high temperature annealing

Physica Status Solidi (b), 243(7), 1436–1440.