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2023 journal article
On the thermal conductivity anisotropy in wurtzite GaN
AIP ADVANCES, 13(9).
2021 article
Erratum: "Phonon-boundary scattering and thermal transport in AlxGa1<bold>-</bold>xN: Effect of layer thickness" [Appl. Phys. Lett. <bold>117</bold>, 252102 (2020)]
Tran, D. Q., Delgado-Carrascon, R., Muth, J. F., Paskova, T., Nawaz, M., Darakchieva, V., & Paskov, P. P. (2021, May 3). APPLIED PHYSICS LETTERS, Vol. 118.
2020 journal article
Dielectric and conducting properties of unintentionally and Sn-doped beta-Ga2O3 studied by terahertz spectroscopy
JOURNAL OF APPLIED PHYSICS, 127(16).
2020 journal article
Phonon-boundary scattering and thermal transport in AlxGa1-xN: Effect of layer thickness
APPLIED PHYSICS LETTERS, 117(25).
2019 journal article
Effect of Growth Pressure on PLD-Deposited Gallium Oxide Thin Films for Deep-UV Photodetectors
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 216(20).
2019 journal article
Modification of the Surface Properties of AlxGa1-xN Substrates with Gradient Aluminum Composition Using Wet Chemical Treatments
ACS OMEGA, 4(7), 11760–11769.
2019 journal article
Nanostructured GaOOH modified with reactive yellow, red and blue water-soluble dyes
AIP ADVANCES, 9(2).
2019 journal article
Self-Heating Characterization of $\beta$ -Ga2O3 Thin-Channel MOSFETs by Pulsed ${I}$ - ${V}$ and Raman Nanothermography
IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(1), 204–211.
2019 article
Thermal conductivity of ultra-wide bandgap thin layers - High Al-content AlGaN and beta-Ga2O3
Tran, D. Q., Blumenschein, N., Mock, A., Sukkaew, P., Zhang, H., Muth, J. F., … Darakchieva, V. (2020, February 15). PHYSICA B-CONDENSED MATTER, Vol. 579.
2018 journal article
Passivation of semipolar (10-1-1) GaN with different organic adsorbates
MATERIALS LETTERS, 236, 201–204.
2018 article
Thermal conductivity of bulk and thin film beta-Ga2O3 measured by the 3 omega technique
OXIDE-BASED MATERIALS AND DEVICES IX, Vol. 10533.
2017 journal article
Anisotropic thermal conductivity of beta-Ga2O3 at elevated temperatures: Effect of Sn and Fe dopants
JOURNAL OF APPLIED PHYSICS, 121(23).
2017 journal article
Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures - theory and experiment
AIP ADVANCES, 7(9).
2017 journal article
Electron band bending and surface sensitivity: X-ray photoelectron spectroscopy of polar GaN surfaces
SURFACE SCIENCE, 664, 241–245.
2017 article
Thermal conductivity of bulk GaN grown by HVPE: Effect of Si doping
Slomski, M., Paskov, P. P., Leach, J. H., Muth, J. F., & Paskova, T. (2017, August). PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 254.
2016 journal article
Electron band bending of polar, semipolar and non-polar GaN surfaces
JOURNAL OF APPLIED PHYSICS, 119(10).
2016 journal article
Erratum: “Electron band bending of polar, semipolar and non-polar GaN surfaces” [J. Appl. Phys. 119, 105303 (2016)]
Journal of Applied Physics, 119(15), 159901.
2016 journal article
GaN quantum dot polarity determination by X-ray photoelectron diffraction
APPLIED SURFACE SCIENCE, 389, 1156–1160.
2016 article
Preface
Qiu, R., Caneau, C., & Paskova, T. (2016, October 15). JOURNAL OF CRYSTAL GROWTH, Vol. 452, pp. VIII-VIII.
2016 article
Preface: Bulk nitride workshop 2015
Freitas, J. A., Jr., Paskova, T., Bockowski, M., & Fujioka, H. (2016, December 15). JOURNAL OF CRYSTAL GROWTH, Vol. 456, pp. 1–1.
2016 journal article
Tuning the biocompatibility of aluminum nitride
MATERIALS LETTERS, 189, 1–4.
2015 review
A review of in situ surface functionalization of gallium nitride via beaker wet chemistry
[Review of ]. JOURNAL OF MATERIALS RESEARCH, 30(19), 2859–2870.
2015 journal article
Comparison of the Stability of Functionalized GaN and GaP
CHEMPHYSCHEM, 16(8), 1687–1694.
2015 journal article
Modulated optical sensitivity with nanostructured gallium nitride
APPLIED PHYSICS LETTERS, 106(15).
2015 article
NITRIDES AND OXYNITRIDE MATERIALS Introduction
Redwing, J., Lences, Z., Xie, R.-J., & Paskova, T. (2015, October 14). JOURNAL OF MATERIALS RESEARCH, Vol. 30, pp. 2845–2845.
2015 journal article
Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction
APPLIED PHYSICS LETTERS, 106(2).
2015 journal article
Polarity of GaN with polar {0001} and semipolar {10(1)over-bar1}, {20(2)over-bar1}, {11(2)over-bar2} orientations by x-ray photoelectron diffraction
JOURNAL OF MATERIALS RESEARCH, 30(19), 2881–2892.
2014 journal article
In Situ Chemical Functionalization of Gallium Nitride with Phosphonic Acid Derivatives during Etching
Langmuir, 30(8), 2038–2046.
2014 journal article
Modified surface chemistry, potential, and optical properties of polar gallium nitride via long chained phosphonic acids
APPLIED SURFACE SCIENCE, 327, 498–503.
2014 journal article
Modulated optical properties of nonpolar gallium nitride via surface in-situ functionalization with cysteamine assisted phosphoric acid
APPLIED SURFACE SCIENCE, 295, 207–213.
2014 journal article
Polarity of semipolar wurtzite crystals: X-ray photoelectron diffraction from GaN{10(1)over-bar1} and GaN{20(2)over-bar1} surfaces
JOURNAL OF APPLIED PHYSICS, 116(10).
2014 article
Preface
Freitas, J. A., Jr., Meissner, E., Paskova, T., & Miyake, H. (2014, October 1). JOURNAL OF CRYSTAL GROWTH, Vol. 403, pp. 1–2.
2014 journal article
Surface Characterization of Gallium Nitride Modified with Peptides before and after Exposure to Ionizing Radiation in Solution
Langmuir, 30(51), 15477–15485.
2014 journal article
Thermal conductivity and dielectric properties of a TiO2-based electrical insulator for use with high temperature superconductor-based magnets
SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 27(9).
2013 journal article
Biomolecular Gradients via Semiconductor Gradients: Characterization of Amino Acid Adsorption to InxGa1–xN Surfaces
ACS Applied Materials & Interfaces, 5(15), 7236–7243.
2013 journal article
Effect of etching with cysteamine assisted phosphoric acid on gallium nitride surface oxide formation
JOURNAL OF APPLIED PHYSICS, 114(6).
2013 journal article
GaN polarity determination by photoelectron diffraction
APPLIED PHYSICS LETTERS, 103(9).
2013 chapter
Molecular Interactions on InxGa1−xN
In G. Shaw III, B. C. Prorok, L. V. Starman, & C. Furlong (Eds.), MEMS and Nanotechnology (pp. 109–114).
Ed(s): G. Shaw, B. Prorok, L. Starman & C. Furlong
Event: Annual Conference on Experimental and Applied Mechanics at Lombard, IL on June 3-5, 2013
2013 journal article
Multifacet semipolar formation by controlling the groove depth via lateral sidewall epitaxy
JOURNAL OF CRYSTAL GROWTH, 367, 88–93.
2013 journal article
Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges
APPLIED PHYSICS LETTERS, 103(19).
2013 journal article
Site-specific comparisons of V-defects and threading dislocations in InGaN/GaN multi-quantum-wells grown on SiC and GaN substrates
Journal of Crystal Growth, 387, 16–22.
2013 journal article
Spectroscopic investigation of coupling among asymmetric InGaN/GaN multiple quantum wells grown on non-polar a-plane GaN substrates
APPLIED PHYSICS LETTERS, 103(18).
2013 article
The 19th American Conference on Crystal Growth and Epitaxy in conjunction with The 16th US Biennial Workshop on Organometallic Vapor Phase Epitaxy Preface
Bliss, D., Dupuis, R., Wang, C., Paskova, T., Qiu, R., Bhat, R., & Caneau, C. (2014, May 1). JOURNAL OF CRYSTAL GROWTH, Vol. 393, pp. 1–1.
2013 journal article
Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates
Journal of Crystal Growth, 380, 14–17.
2012 journal article
Anisotropy of free-carrier absorption and diffusivity in m-plane GaN
Applied Physics Letters, 100(2), 022112.
2012 journal article
Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe
Applied Physics Letters, 100(3), 031908.
2012 journal article
Charge transfer in semi-insulating Fe-doped GaN
JOURNAL OF APPLIED PHYSICS, 112(1).
2012 journal article
Electrical and optical properties of bulk GaN substrates studied by Kelvin probe and photoluminescence
Physica Status Solidi (c), 10(3), 536–539.
2012 journal article
Fish scale terrace GaInN/GaN light-emitting diodes with enhanced light extraction
Applied Physics Letters, 101(23), 232106.
2012 journal article
Microstructure of epitaxial GaN films grown on chemomechanically polished GaN(0001) substrates
Journal of Crystal Growth, 347(1), 88–94.
2012 journal article
Near-Infrared Absorption in Lattice-Matched AlInN/GaN and Strained AlGaN/GaN Heterostructures Grown by MBE on Low-Defect GaN Substrates
Journal of Electronic Materials, 41(5), 881–886.
2012 journal article
Quantitative low-energy electron diffraction analysis of the GaN (1×1) reconstruction
Surface Science, 606(7-8), 740–743.
2012 journal article
Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates
IEEE ELECTRON DEVICE LETTERS, 33(3), 366–368.
2011 journal article
Cathodoluminescence imaging for the determination of dislocation density in differently doped HVPE GaN
Journal of Crystal Growth, 340(1), 78–82.
2011 journal article
Characterization of freestanding semi-insulating Fe-doped GaN by photoluminescence and electromodulation spectroscopy
JOURNAL OF APPLIED PHYSICS, 109(12).
2011 journal article
Dielectric response functions of the (0001¯), (101¯3) GaN single crystalline and disordered surfaces studied by reflection electron energy loss spectroscopy
Journal of Applied Physics, 110(4), 043507.
2011 journal article
Dual temperature process for reduction in regrowth interfacial charge in AlGaN/GaN HEMTs grown on GaN substrates
Physica Status Solidi (c), 8(7-8), 2053–2055.
2011 journal article
Electrical characteristics of the vertical GaN rectifiers fabricated on bulk GaN wafer
Physica Status Solidi (c), 8(7-8), 2430–2432.
2011 journal article
Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 209(3), 559–564.
2011 journal article
Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates
JOURNAL OF CRYSTAL GROWTH, 340(1), 66–73.
2011 journal article
On the reduction of efficiency loss in polar c -plane and non-polar m -plane InGaN light emitting diodes
Physica Status Solidi (c), 8(5), 1560–1563.
2011 article
Overgrowth of GaN on GaN nanowires produced by mask-less etching
Frajtag, P., Hosalli, A. M., Samberg, J. P., Colter, P. C., Paskova, T., El-Masry, N. A., & Bedair, S. M. (2012, August 1). JOURNAL OF CRYSTAL GROWTH, Vol. 352, pp. 203–208.
2011 journal article
Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates
Physica Status Solidi (a), 208(7), 1532–1534.
2011 journal article
Radial space-charge-limited electron flow in semi-insulating GaN:Fe
Journal of Applied Physics, 110(1), 013723.
2010 journal article
Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates
Applied Physics Letters, 96(10), 102109.
2010 journal article
Cyan and green light emitting diode on non-polar m -plane GaN bulk substrate
Physica Status Solidi (c), 7(7-8), 2190–2192.
2010 journal article
Effect of Fe doping on the terahertz conductivity of GaN single crystals
Journal of Physics D: Applied Physics, 43(14), 145401.
2010 journal article
Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates
Applied Physics Letters, 96(13), 133505.
2010 journal article
Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth
JOURNAL OF CRYSTAL GROWTH, 312(7), 902–905.
2010 journal article
InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes
Applied Physics Letters, 97(3), 031110.
2010 journal article
In Situ Raman Analysis of a Bulk GaN-Based Schottky Rectifier Under Operation
Journal of Electronic Materials, 39(10), 2237–2242.
2010 journal article
Mg-related acceptors in GaN
Physica Status Solidi (c), 7(7-8), 1850–1852.
2010 journal article
Optimization of homoepitaxially grown AlGaN/GaN heterostructures
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 207(10), 2292–2299.
2010 journal article
Physical Properties of AlGaN/GaN Heterostructures Grown on Vicinal Substrates
Journal of Electronic Materials, 39(5), 504–516.
2010 journal article
Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures
Solid-State Electronics, 54(11), 1470–1473.
2010 journal article
Radiation-induced defects in GaN
Physica Scripta, T141, 014015.
2010 journal article
Revealing extended defects in HVPE-grown GaN
Journal of Crystal Growth, 312(18), 2611–2615.
2010 journal article
The effect of ballistic and quasi-ballistic electrons on the efficiency droop of InGaN light emitting diodes
Physica Status Solidi (RRL) - Rapid Research Letters, 4(8-9), 194–196.
2010 journal article
Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate
Semiconductor Science and Technology, 26(2), 022002.
2010 journal article
Various misfit dislocations in green and yellow GaInN/GaN light emitting diodes
Physica Status Solidi (a), 207(6), 1305–1308.
2010 journal article
Wavelength-stable cyan and green light emitting diodes on nonpolar m-plane GaN bulk substrates
Applied Physics Letters, 96(5), 051101.
2009 journal article
Cathodoluminescence evaluation of subsurface damage in GaN substrate after polishing
Physica Status Solidi (c), 6(S2), S325–S328.
2009 journal article
Effect of Fe doping on optical properties of freestanding semi-insulating HVPE GaN:Fe
Journal of Crystal Growth, 312(8), 1205–1209.
2009 journal article
Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes
Applied Physics Letters, 95(12), 121107.
2009 journal article
Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates
JOURNAL OF APPLIED PHYSICS, 106(11).
2009 journal article
Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN
Applied Physics Letters, 95(10), 101106.
2009 journal article
Modulation of mobility in homoepitaxially-grown AlGaN/GaN heterostructures
Physica Status Solidi (c), 6(S2), S1037–S1040.
2009 journal article
On carrier spillover in c- and m-plane InGaN light emitting diodes
Applied Physics Letters, 95(20), 201113.
2009 journal article
Optical characterization of bulk GaN substrates with c -, a -, and m -plane surfaces
Physica Status Solidi (c), 6(S2), S763–S766.
2009 journal article
Polar and nonpolar HVPE GaN substrates: impact of doping on the structural, electrical and optical characteristics
Physica Status Solidi (c), 6(S2), S344–S347.
2008 journal article
Development and prospects of nitride materials and devices with nonpolar surfaces
Physica Status Solidi (b), 245(6), 1011–1025.
2008 journal article
Enlargement of bulk non-polar GaN substrates by HVPE regrowth
Physica Status Solidi (c), 5(6), 1886–1888.
2008 journal article
Fabrication and characterization of native non-polar GaN substrates
Journal of Crystal Growth, 310(17), 3953–3956.
2008 journal article
Green light emitting diodes on a-plane GaN bulk substrates
Applied Physics Letters, 92(24), 241109.
2007 journal article
Bending in HVPE grown GaN films: origin and reduction possibilities
Physica Status Solidi (c), 4(7), 2256–2259.
2007 journal article
Defect distribution in a-plane GaN on Al2O3
Applied Physics Letters, 90(12), 121915.
2007 journal article
Defect structure ofa-plane GaN grown by hydride and metal-organic vapor phase epitaxy onr-plane sapphire
Physica Status Solidi (c), 4(7), 2564–2567.
2007 journal article
Effect of sapphire-substrate thickness on the curvature of thick GaN films grown by hydride vapor phase epitaxy
Journal of Applied Physics, 102(12), 123507.
2007 journal article
Interfacial structure of a-plane GaN grown on r-plane sapphire
Applied Physics Letters, 90(8), 081918.
2007 journal article
Metastability of the UV luminescence in Mg-doped GaN layers grown by MOVPE on quasi-bulk GaN templates
Physica B: Condensed Matter, 401-402, 302–306.
2007 journal article
Nonpolara- andm-plane bulk GaN sliced from boules: structural and optical characteristics
Physica Status Solidi (c), 4(7), 2536–2539.
2007 journal article
Phonons in strained AlGaN/GaN superlattices
Physica Status Solidi (c), 4(1), 170–174.
2007 journal article
Vacancy defect distribution in heteroepitaxial -plane GaN grown by hydride vapor phase epitaxy
Journal of Crystal Growth, 300(1), 251–253.
2006 journal article
Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry ona-plane GaN
Physica Status Solidi (b), 243(7), 1594–1598.
2006 journal article
Bending in HVPE GaN free-standing films: effects of laser lift-off, polishing and high-pressure annealing
Physica Status Solidi (c), 3(6), 1475–1478.
2006 journal article
Dissociation of VGa–ON complexes in HVPE GaN by high pressure and high temperature annealing
Physica Status Solidi (b), 243(7), 1436–1440.
2006 journal article
Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers
Journal of Crystal Growth, 300(1), 233–238.
2006 journal article
Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy
Applied Physics Letters, 88(14), 141909.
2006 journal article
Electron concentration and mobility profiles in InN layers grown by MBE
Physica Status Solidi (a), 203(7), 1681–1685.
2006 journal article
High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire
Applied Physics Letters, 89(5), 051914.
2006 journal article
Optical properties of nonpolar -plane GaN layers
Superlattices and Microstructures, 40(4-6), 253–261.
2006 journal article
Optical signatures of dopants in GaN
Materials Science in Semiconductor Processing, 9(1-3), 168–174.
2006 journal article
Photoluminescence ofa -plane GaN: comparison between MOCVD and HVPE grown layers
Physica Status Solidi (c), 3(6), 1499–1502.
2006 journal article
Strain ina-plane GaN layers grown onr-plane sapphire substrates
Physica Status Solidi (a), 203(7), 1672–1675.
2006 journal article
Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
Journal of Applied Physics, 100(10), 103511.
2006 journal article
Structural defect-related emissions in nonpolar a-plane GaN
Physica B: Condensed Matter, 376-377, 473–476.
2006 journal article
The dominant shallow 0.225 eV acceptor in GaN
Physica Status Solidi (b), 243(7), 1604–1608.
2006 journal article
Thermal stability of in-grown vacancy defects in GaN grown by hydride vapor phase epitaxy
Journal of Applied Physics, 99(6), 066105.
2006 journal article
Time-resolved spectroscopy of excitons bound at shallow neutral donors in HVPE GaN
Physica B: Condensed Matter, 376-377, 482–485.
2005 journal article
Donor-acceptor pair emission enhancement in mass-transport-grown GaN
Journal of Applied Physics, 98(3), 033508.
2005 journal article
Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition
Journal of Applied Physics, 98(9), 093519.
2005 journal article
Nonpolara-plane HVPE GaN: growth and in-plane anisotropic properties
Physica Status Solidi (c), 2(7), 2027–2031.
2005 journal article
Optoelectronic devices on bulk GaN
Journal of Crystal Growth, 281(1), 101–106.
2005 journal article
Photoluminescence of GaN/AlN superlattices grown by MOCVD
Physica Status Solidi (c), 2(7), 2345–2348.
2005 journal article
Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers
Journal of Crystal Growth, 281(1), 55–61.
2004 journal article
Band structure effects in nitrogen K-edge resonant inelastic X-ray scattering from GaN
Physica Status Solidi (b), 241(7), R27–R29.
2004 journal article
Characterization of mass-transport grown GaN by hydride vapour-phase epitaxy
Journal of Crystal Growth, 273(1-2), 118–128.
2004 journal article
Deformation potentials of the E1(TO) and E2 modes of InN
Applied Physics Letters, 84(18), 3636–3638.
2004 journal article
Free-to-bound radiative recombination in highly conducting InN epitaxial layers
Superlattices and Microstructures, 36(4-6), 563–571.
2004 journal article
Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications: Strain distribution and wafer bending
Journal of Electronic Materials, 33(5), 389–394.
2004 journal article
Infrared ellipsometry and Raman studies of hexagonal InN films: correlation between strain and vibrational properties
Superlattices and Microstructures, 36(4-6), 573–580.
2004 journal article
Optical investigation of AlGaN/GaN quantum wells and superlattices
Physica Status Solidi (a), 201(10), 2251–2258.
2004 journal article
Polar and nonpolar GaN grown by HVPE: Preferable substrates for nitride-based emitting devices
Physica Status Solidi (a), 201(10), 2265–2270.
2004 journal article
Polarized photoluminescence of exciton-polaritons in free-standing GaN
Physica Status Solidi (a), 201(4), 678–685.
2004 journal article
Structural characteristics and lattice parameters of hydride vapor phase epitaxial GaN free-standing quasisubstrates
Journal of Applied Physics, 97(1), 013517.
2003 journal article
HVPE-GaN: comparison of emission properties and microstructure of films grown on different laterally overgrown templates
Diamond and Related Materials, 13(4-8), 1125–1129.
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