Works (136)

Updated: April 5th, 2024 09:11

2023 journal article

On the thermal conductivity anisotropy in wurtzite GaN

AIP ADVANCES, 13(9).

By: D. Tran*, T. Paskova n, V. Darakchieva* & P. Paskov*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: October 16, 2023

2021 article

Erratum: "Phonon-boundary scattering and thermal transport in AlxGa1<bold>-</bold>xN: Effect of layer thickness" [Appl. Phys. Lett. <bold>117</bold>, 252102 (2020)]

Tran, D. Q., Delgado-Carrascon, R., Muth, J. F., Paskova, T., Nawaz, M., Darakchieva, V., & Paskov, P. P. (2021, May 3). APPLIED PHYSICS LETTERS, Vol. 118.

Source: Web Of Science
Added: October 4, 2021

2020 journal article

Dielectric and conducting properties of unintentionally and Sn-doped beta-Ga2O3 studied by terahertz spectroscopy

JOURNAL OF APPLIED PHYSICS, 127(16).

By: N. Blumenschein n, C. Kadlec*, O. Romanyuk*, T. Paskova n, J. Muth n & F. Kadlec*

UN Sustainable Development Goal Categories
Source: Web Of Science
Added: May 26, 2020

2020 journal article

Phonon-boundary scattering and thermal transport in AlxGa1-xN: Effect of layer thickness

APPLIED PHYSICS LETTERS, 117(25).

Source: Web Of Science
Added: January 19, 2021

2020 journal article

Self-Heating Characterization of $\beta$ -Ga2O3 Thin-Channel MOSFETs by Pulsed ${I}$ - ${V}$ and Raman Nanothermography

IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(1), 204–211.

author keywords: Channel temperature; gallium oxide; MOSFET; pulsed I-V measurements
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: January 27, 2020

2020 article

Thermal conductivity of ultra-wide bandgap thin layers - High Al-content AlGaN and beta-Ga2O3

Tran, D. Q., Blumenschein, N., Mock, A., Sukkaew, P., Zhang, H., Muth, J. F., … Darakchieva, V. (2020, February 15). PHYSICA B-CONDENSED MATTER, Vol. 579.

author keywords: Thermal conductivity; Ga2O3; AlGaN
Source: Web Of Science
Added: February 17, 2020

2019 journal article

Effect of Growth Pressure on PLD-Deposited Gallium Oxide Thin Films for Deep-UV Photodetectors

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 216(20).

By: N. Blumenschein n, T. Paskova n & J. Muth n

author keywords: gallium oxide; photodetectors; pulsed laser deposition; thin films
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: September 3, 2019

2019 journal article

Modification of the Surface Properties of AlxGa1-xN Substrates with Gradient Aluminum Composition Using Wet Chemical Treatments

ACS OMEGA, 4(7), 11760–11769.

TL;DR: Kelvin probe force microscopy measurements demonstrated that one can modify the surface charge using the chemical treatments, and the reported methodology and characterization can be utilized in future interfacial studies that rely on water-based wet chemical functionalization of inorganic materials. (via Semantic Scholar)
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: September 16, 2019

2019 journal article

Nanostructured GaOOH modified with reactive yellow, red and blue water-soluble dyes

AIP ADVANCES, 9(2).

By: W. Adams n, N. Vinueza n, O. Romanyuk*, I. Gordeev*, T. Paskova n & A. Ivanisevic n

UN Sustainable Development Goal Categories
Sources: Web Of Science, NC State University Libraries
Added: March 18, 2019

2019 journal article

Passivation of semipolar (10-1-1) GaN with different organic adsorbates

MATERIALS LETTERS, 236, 201–204.

By: P. Snyder n, H. Davis n, N. Berg n, B. Pearce n, O. Romanyuk*, P. Jiricek*, T. Paskova n, A. Ivanisevic n

author keywords: Semiconductor; Gallium nitride; Semipolar; Surface functionalization; Peptides; Phosphates; Lysine; Porphyrin
Source: Web Of Science
Added: December 10, 2018

2018 article

Thermal conductivity of bulk and thin film beta-Ga2O3 measured by the 3 omega technique

OXIDE-BASED MATERIALS AND DEVICES IX, Vol. 10533.

author keywords: gallium oxide; thermal conductivity; thin films
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: December 31, 2018

2017 journal article

Anisotropic thermal conductivity of beta-Ga2O3 at elevated temperatures: Effect of Sn and Fe dopants

JOURNAL OF APPLIED PHYSICS, 121(23).

By: M. Slomski n, N. Blumenschein n, P. Paskov n, J. Muth n & T. Paskova n

UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

2017 journal article

Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures - theory and experiment

AIP ADVANCES, 7(9).

By: P. Paskov n, M. Slomski n, J. Leach*, J. Muth n & T. Paskova n

Source: Web Of Science
Added: August 6, 2018

2017 journal article

Electron band bending and surface sensitivity: X-ray photoelectron spectroscopy of polar GaN surfaces

SURFACE SCIENCE, 664, 241–245.

By: I. Bartos*, O. Romanyuk*, T. Paskova n & P. Jiricek*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2017 article

Thermal conductivity of bulk GaN grown by HVPE: Effect of Si doping

Slomski, M., Paskov, P. P., Leach, J. H., Muth, J. F., & Paskova, T. (2017, August). PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 254.

By: M. Slomski n, P. Paskov n, J. Leach*, J. Muth n & T. Paskova n

author keywords: GaN; HVPE growth; Si doping; thermal conductivity
Source: Web Of Science
Added: August 6, 2018

2017 journal article

Tuning the biocompatibility of aluminum nitride

MATERIALS LETTERS, 189, 1–4.

By: N. Berg n, T. Paskova n & A. Ivanisevic n

author keywords: Semiconductor; Cell adhesion; PC 12 cells; Topography; Surface functionalization; Peptides; Aluminum nitride
TL;DR: High-quality, electronic-grade, aluminum nitride thin films grown by reactive sputtering showed high degree of stability in cell culture with very little Al leaching over time and functionalization with peptides can be used to reverse this behavior. (via Semantic Scholar)
Source: Web Of Science
Added: August 6, 2018

2016 journal article

Electron band bending of polar, semipolar and non-polar GaN surfaces

JOURNAL OF APPLIED PHYSICS, 119(10).

By: I. Bartos*, O. Romanyuk*, J. Houdkova*, P. Paskov n, T. Paskova n & P. Jiricek*

Source: Web Of Science
Added: August 6, 2018

2016 journal article

Erratum: “Electron band bending of polar, semipolar and non-polar GaN surfaces” [J. Appl. Phys. 119, 105303 (2016)]

Journal of Applied Physics, 119(15), 159901.

Source: Crossref
Added: August 28, 2020

2016 journal article

GaN quantum dot polarity determination by X-ray photoelectron diffraction

APPLIED SURFACE SCIENCE, 389, 1156–1160.

By: O. Romanyuk*, I. Bartos*, J. Brault*, P. De Mierry*, T. Paskova n & P. Jiricek*

author keywords: GaN; Semipolar GaN; Quantum dots; X-ray photoelectron diffraction; Surface polarity
Source: Web Of Science
Added: August 6, 2018

2016 article

Preface

Qiu, R., Caneau, C., & Paskova, T. (2016, October 15). JOURNAL OF CRYSTAL GROWTH, Vol. 452, pp. VIII-VIII.

By: R. Qiu n, C. Caneau & T. Paskova n

Source: Web Of Science
Added: August 6, 2018

2016 article

Preface: Bulk nitride workshop 2015

Freitas, J. A., Jr., Paskova, T., Bockowski, M., & Fujioka, H. (2016, December 15). JOURNAL OF CRYSTAL GROWTH, Vol. 456, pp. 1–1.

By: J. Freitas*, T. Paskova, M. Bockowski* & H. Fujioka*

Source: Web Of Science
Added: August 6, 2018

2015 review

A review of in situ surface functionalization of gallium nitride via beaker wet chemistry

[Review of ]. JOURNAL OF MATERIALS RESEARCH, 30(19), 2859–2870.

By: B. Pearce n, S. Wilkins n, T. Paskova n & A. Ivanisevic n

Source: Web Of Science
Added: August 6, 2018

2015 journal article

Comparison of the Stability of Functionalized GaN and GaP

CHEMPHYSCHEM, 16(8), 1687–1694.

By: S. Wilkins n, T. Paskova n, C. Reynolds n & A. Ivanisevic n

author keywords: adsorption; gallium; mass spectrometry; peroxide; photoelectron spectroscopy
TL;DR: The results support the notion that hydroxyl species act as precursors to gallium oxide formation and lead to subsequent instability in aqueous solutions, as the increase of the degree of leaching was more significant for hydrogen peroxide treated samples. (via Semantic Scholar)
Source: Web Of Science
Added: August 6, 2018

2015 journal article

Modified surface chemistry, potential, and optical properties of polar gallium nitride via long chained phosphonic acids

APPLIED SURFACE SCIENCE, 327, 498–503.

By: S. Wilkins n, T. Paskova n & A. Ivanisevic n

author keywords: In situ functionalization; Polar; Gallium nitride; X-ray photoelectron spectroscopy; Kelvin probe microscopy
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2015 journal article

Modulated optical sensitivity with nanostructured gallium nitride

APPLIED PHYSICS LETTERS, 106(15).

By: S. Wilkins n, M. Slomski n, T. Paskova n, J. Weyher* & A. Ivanisevic n

Source: Web Of Science
Added: August 6, 2018

2015 article

NITRIDES AND OXYNITRIDE MATERIALS Introduction

Redwing, J., Lences, Z., Xie, R.-J., & Paskova, T. (2015, October 14). JOURNAL OF MATERIALS RESEARCH, Vol. 30, pp. 2845–2845.

By: J. Redwing*, Z. Lences*, R. Xie* & T. Paskova n

Source: Web Of Science
Added: August 6, 2018

2015 journal article

Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction

APPLIED PHYSICS LETTERS, 106(2).

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2015 journal article

Polarity of GaN with polar {0001} and semipolar {10(1)over-bar1}, {20(2)over-bar1}, {11(2)over-bar2} orientations by x-ray photoelectron diffraction

JOURNAL OF MATERIALS RESEARCH, 30(19), 2881–2892.

By: O. Romanyuk*, P. Jiricek*, T. Paskova n & I. Bartos*

Source: Web Of Science
Added: August 6, 2018

2014 journal article

In Situ Chemical Functionalization of Gallium Nitride with Phosphonic Acid Derivatives during Etching

Langmuir, 30(8), 2038–2046.

By: S. Wilkins n, M. Greenough*, C. Arellano n, T. Paskova n & A. Ivanisevic n

MeSH headings : Biosensing Techniques; Gallium / chemistry; Membranes, Artificial; Microscopy, Atomic Force; Phosphorous Acids / chemistry; Photoelectron Spectroscopy
TL;DR: High-quality GaN (both free-standing bulk polar and bulk nonpolar) demonstrated increased sensitivity to oxide formation and room-temperature PL stands out as an excellent technique to identify nonradiative recombination as observed in the spectra of heteroepitaxially grown GaN samples. (via Semantic Scholar)
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Sources: Crossref, Web Of Science
Added: August 6, 2018

2014 journal article

Modulated optical properties of nonpolar gallium nitride via surface in-situ functionalization with cysteamine assisted phosphoric acid

APPLIED SURFACE SCIENCE, 295, 207–213.

By: S. Wilkins n, T. Paskova n & A. Ivanisevic n

author keywords: In-situ functionalization; Nonpolar; Gallium nitride; Atomic force microscopy; Photoluminescence; X-ray photoelectron spectroscopy
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2014 chapter

Molecular Interactions on InxGa1−xN

In G. Shaw III, B. C. Prorok, L. V. Starman, & C. Furlong (Eds.), MEMS and Nanotechnology (pp. 109–114).

By: L. Bain n, A. Hosalli n, S. Bedair n, T. Paskova n & A. Ivanisevic n

Ed(s): G. Shaw, B. Prorok, L. Starman & C. Furlong

Event: Annual Conference on Experimental and Applied Mechanics at Lombard, IL on June 3-5, 2013

TL;DR: Determining the dynamics of amino acid behavior as a function of both the substrate and the environment provides new insight into the preparation of semiconductor materials for biological applications. (via Semantic Scholar)
Source: Crossref
Added: November 7, 2020

2014 journal article

Polarity of semipolar wurtzite crystals: X-ray photoelectron diffraction from GaN{10(1)over-bar1} and GaN{20(2)over-bar1} surfaces

JOURNAL OF APPLIED PHYSICS, 116(10).

By: O. Romanyuk*, P. Jiricek*, T. Paskova n & I. Bartos*

Source: Web Of Science
Added: August 6, 2018

2014 article

Preface

Freitas, J. A., Jr., Meissner, E., Paskova, T., & Miyake, H. (2014, October 1). JOURNAL OF CRYSTAL GROWTH, Vol. 403, pp. 1–2.

By: J. Freitas*, E. Meissner*, T. Paskova n & H. Miyake*

Source: Web Of Science
Added: August 6, 2018

2014 journal article

Site-specific comparisons of V-defects and threading dislocations in InGaN/GaN multi-quantum-wells grown on SiC and GaN substrates

Journal of Crystal Growth, 387, 16–22.

By: F. Liu*, L. Huang*, R. Kamaladasa*, Y. Picard*, E. Preble*, T. Paskova*, K. Evans*, R. Davis*, L. Porter*

author keywords: V-defect; Electron channeling contrast imaging (ECCI); Threading dislocation (TD); Multi-quantum wells (MQW); InGaN; GaN
Source: Crossref
Added: August 28, 2020

2014 journal article

Surface Characterization of Gallium Nitride Modified with Peptides before and after Exposure to Ionizing Radiation in Solution

Langmuir, 30(51), 15477–15485.

By: N. Berg*, M. Nolan n, T. Paskova* & A. Ivanisevic*

MeSH headings : Amino Acid Sequence; Gallium / chemistry; Oligopeptides / chemistry; Solutions; Surface Properties / radiation effects
TL;DR: It is hypothesized that during radiation exposure of the samples, the radiolysis of water produces peroxide and other reactive species on the sample surface which promotes the formation of a more stable layer of gallium oxyhydroxide which passivates the surface better than other oxide species. (via Semantic Scholar)
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Sources: Web Of Science, Crossref
Added: August 6, 2018

2014 article

The 19th American Conference on Crystal Growth and Epitaxy in conjunction with The 16th US Biennial Workshop on Organometallic Vapor Phase Epitaxy Preface

Bliss, D., Dupuis, R., Wang, C., Paskova, T., Qiu, R., Bhat, R., & Caneau, C. (2014, May 1). JOURNAL OF CRYSTAL GROWTH, Vol. 393, pp. 1–1.

By: D. Bliss, R. Dupuis, C. Wang, T. Paskova*, R. Qiu, R. Bhat, C. Caneau

Source: Web Of Science
Added: August 6, 2018

2014 journal article

Thermal conductivity and dielectric properties of a TiO2-based electrical insulator for use with high temperature superconductor-based magnets

SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 27(9).

By: S. Ishmael n, M. Slomski n, H. Luo n, M. White*, A. Hunt*, N. Mandzy*, J. Muth n, R. Nesbit* ...

author keywords: insulation; high temperature superconducting magnet; quench; thermal conductivity; nanopowder; TiO2
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2013 journal article

Biomolecular Gradients via Semiconductor Gradients: Characterization of Amino Acid Adsorption to InxGa1–xN Surfaces

ACS Applied Materials & Interfaces, 5(15), 7236–7243.

By: L. Bain n, S. Jewett*, A. Mukund, S. Bedair*, T. Paskova* & A. Ivanisevic*

author keywords: III-V semiconductor; indium gallium nitride; X-ray photoelectron spectroscopy; surface gradient; amino acid; atomic force microscopy
MeSH headings : Adsorption; Amino Acids / chemistry; Arginine / chemistry; Biocompatible Materials / chemistry; Gallium / chemistry; Humans; Indium / chemistry; Microscopy, Atomic Force / methods; Oxides / chemistry; Photochemistry / methods; Photoelectron Spectroscopy / methods; Semiconductors; Spectrophotometry, Ultraviolet / methods; Spectroscopy, Near-Infrared / methods; Static Electricity; Surface Properties
TL;DR: A gradient inorganic substrate featuring varying affinity for amino acid adhesion is presented, which can be applied in generating gradient architectures for biosensors and studying cellular behaviors without application of specialized patterning processes. (via Semantic Scholar)
Sources: Crossref, Web Of Science
Added: August 6, 2018

2013 journal article

Effect of etching with cysteamine assisted phosphoric acid on gallium nitride surface oxide formation

JOURNAL OF APPLIED PHYSICS, 114(6).

By: S. Wilkins n, T. Paskova n & A. Ivanisevic n

Source: Web Of Science
Added: August 6, 2018

2013 journal article

GaN polarity determination by photoelectron diffraction

APPLIED PHYSICS LETTERS, 103(9).

By: O. Romanyuk*, P. Jiricek*, T. Paskova n, I. Bieloshapka* & I. Bartos*

Source: Web Of Science
Added: August 6, 2018

2013 journal article

Multifacet semipolar formation by controlling the groove depth via lateral sidewall epitaxy

JOURNAL OF CRYSTAL GROWTH, 367, 88–93.

By: P. Frajtag n, N. Nepal n, T. Paskova n, S. Bedair n & N. El-Masry n

author keywords: Crystal structure; Metalorganic vapor phase epitaxy; InGaN; Nitrides
Source: Web Of Science
Added: August 6, 2018

2013 journal article

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

APPLIED PHYSICS LETTERS, 103(19).

By: N. Killat*, M. Montes Bajo*, T. Paskova n, K. Evans*, J. Leach*, X. Li*, U. Oezguer, H. Morkoc* ...

Source: Web Of Science
Added: August 6, 2018

2013 journal article

Spectroscopic investigation of coupling among asymmetric InGaN/GaN multiple quantum wells grown on non-polar a-plane GaN substrates

APPLIED PHYSICS LETTERS, 103(18).

By: A. Roberts*, A. Mohanta*, H. Everitt*, J. Leach*, D. Broeck n, A. Hosalli n, T. Paskova n, S. Bedair n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2013 journal article

Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates

Journal of Crystal Growth, 380, 14–17.

By: D. Storm*, D. Deen*, D. Katzer*, D. Meyer*, S. Binari*, T. Gougousi*, T. Paskova*, E. Preble*, K. Evans*, D. Smith*

author keywords: Molecular beam epitaxy; Nitrides; Semiconducting III-V materials; High electron mobility transistors
Source: Crossref
Added: August 28, 2020

2012 journal article

Anisotropy of free-carrier absorption and diffusivity in m-plane GaN

Applied Physics Letters, 100(2), 022112.

By: P. Ščajev*, K. Jarašiūnas*, Ü. Özgür*, H. Morkoç*, J. Leach* & T. Paskova*

Source: Crossref
Added: August 28, 2020

2012 journal article

Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe

Applied Physics Letters, 100(3), 031908.

By: P. Gladkov*, E. Hulicius*, T. Paskova*, E. Preble* & K. Evans*

Source: Crossref
Added: August 28, 2020

2012 journal article

Cathodoluminescence imaging for the determination of dislocation density in differently doped HVPE GaN

Journal of Crystal Growth, 340(1), 78–82.

By: E. Meissner*, S. Schweigard*, J. Friedrich, T. Paskova*, K. Udwary*, G. Leibiger*, F. Habel*

Source: Crossref
Added: August 28, 2020

2012 journal article

Charge transfer in semi-insulating Fe-doped GaN

JOURNAL OF APPLIED PHYSICS, 112(1).

By: J. Dashdorj*, M. Zvanut*, J. Harrison*, K. Udwary* & T. Paskova n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2012 journal article

Electrical and optical properties of bulk GaN substrates studied by Kelvin probe and photoluminescence

Physica Status Solidi (c), 10(3), 536–539.

By: J. McNamara*, M. Foussekis*, A. Baski*, X. Li*, V. Avrutin*, H. Morkoç*, J. Leach*, T. Paskova n ...

author keywords: photoluminescence; Kelvin probe; GaN; surface
Source: Crossref
Added: August 28, 2020

2012 journal article

Fish scale terrace GaInN/GaN light-emitting diodes with enhanced light extraction

Applied Physics Letters, 101(23), 232106.

By: C. Stark*, T. Detchprohm*, L. Zhao*, T. Paskova*, E. Preble* & C. Wetzel*

Source: Crossref
Added: August 28, 2020

2012 journal article

Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 209(3), 559–564.

By: K. Lai n, T. Paskova n, V. Wheeler n, T. Chung*, J. Grenko n, M. Johnson n, K. Udwary*, E. Preble*, K. Evans*

author keywords: cathodoluminescence; MOCVD; quantum wells; TEM; RSM
Source: Web Of Science
Added: August 6, 2018

2012 journal article

Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates

JOURNAL OF CRYSTAL GROWTH, 340(1), 66–73.

By: G. Liu, J. Zhang*, X. Li*, G. Huang*, T. Paskova n, K. Evans*, H. Zhao*, N. Tansu*

author keywords: Metalorganic vapor phase epitaxy; Nitrides; Semiconducting III-V materials; Light emitting diodes
Source: Web Of Science
Added: August 6, 2018

2012 journal article

Microstructure of epitaxial GaN films grown on chemomechanically polished GaN(0001) substrates

Journal of Crystal Growth, 347(1), 88–94.

By: L. Huang*, F. Liu*, J. Zhu*, R. Kamaladasa*, E. Preble*, T. Paskova*, K. Evans*, L. Porter*, Y. Picard*, R. Davis*

author keywords: Grain boundary; Substrate; Terrace/step; Threading dislocations; Homoepitaxy; GaN
Source: Crossref
Added: August 28, 2020

2012 journal article

Near-Infrared Absorption in Lattice-Matched AlInN/GaN and Strained AlGaN/GaN Heterostructures Grown by MBE on Low-Defect GaN Substrates

Journal of Electronic Materials, 41(5), 881–886.

By: C. Edmunds*, L. Tang*, D. Li*, M. Cervantes*, G. Gardner, T. Paskova*, M. Manfra, O. Malis*

author keywords: Intersubband absorption; near infrared; quantum well infrared photodetector; electromodulation; III-nitride semiconductors; molecular-beam epitaxy
Source: Crossref
Added: August 28, 2020

2012 article

Overgrowth of GaN on GaN nanowires produced by mask-less etching

Frajtag, P., Hosalli, A. M., Samberg, J. P., Colter, P. C., Paskova, T., El-Masry, N. A., & Bedair, S. M. (2012, August 1). JOURNAL OF CRYSTAL GROWTH, Vol. 352, pp. 203–208.

By: P. Frajtag n, A. Hosalli n, J. Samberg n, P. Colter n, T. Paskova n, N. El-Masry n, S. Bedair n

author keywords: Defects; Etching; GaN nanowires; X-ray diffraction; Lateral overgrowth; Nitrides
Source: Web Of Science
Added: August 6, 2018

2012 journal article

Quantitative low-energy electron diffraction analysis of the GaN (1×1) reconstruction

Surface Science, 606(7-8), 740–743.

By: O. Romanyuk, P. Jiricek & T. Paskova*

author keywords: Gallium nitride GaN (000(1)over-bar); Semiconductor surfaces; Quantitative low-energy electron diffraction LEED; Dynamical theory of scattering; Surface reconstruction
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Crossref
Added: August 28, 2020

2012 journal article

Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates

IEEE ELECTRON DEVICE LETTERS, 33(3), 366–368.

By: N. Killat*, M. Montes*, J. Pomeroy*, T. Paskova n, K. Evans*, J. Leach*, X. Li*, U. Oezguer ...

author keywords: AlGaN/GaN heterostructure field-effect transistor (HFET); bulk GaN thermal conductivity; Raman thermography; thermal boundary resistance
Source: Web Of Science
Added: August 6, 2018

2011 journal article

Characterization of freestanding semi-insulating Fe-doped GaN by photoluminescence and electromodulation spectroscopy

JOURNAL OF APPLIED PHYSICS, 109(12).

By: D. Dumcenco*, S. Levcenco*, Y. Huang*, C. Reynolds n, J. Reynolds n, K. Tiong*, T. Paskova n, K. Evans*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2011 journal article

Dielectric response functions of the (0001¯), (101¯3) GaN single crystalline and disordered surfaces studied by reflection electron energy loss spectroscopy

Journal of Applied Physics, 110(4), 043507.

By: O. Romanyuk*, P. Jiricek*, J. Zemek*, S. Tougaard* & T. Paskova*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Crossref
Added: August 28, 2020

2011 journal article

Dual temperature process for reduction in regrowth interfacial charge in AlGaN/GaN HEMTs grown on GaN substrates

Physica Status Solidi (c), 8(7-8), 2053–2055.

By: S. Eichfeld*, D. Won*, K. Trumbull*, M. Labella*, X. Weng, J. Robinson*, D. Snyder*, J. Redwing* ...

author keywords: MOCVD; AlGaN/GaN; HEMT
Source: Crossref
Added: August 28, 2020

2011 journal article

Electrical characteristics of the vertical GaN rectifiers fabricated on bulk GaN wafer

Physica Status Solidi (c), 8(7-8), 2430–2432.

By: Y. Wang, H. Xu, S. Alur, Y. Sharma, F. Tong, P. Gartland, T. Issacs-Smith, C. Ahyi ...

author keywords: GaN; rectifier
Source: Crossref
Added: August 28, 2020

2011 journal article

On the reduction of efficiency loss in polar c -plane and non-polar m -plane InGaN light emitting diodes

Physica Status Solidi (c), 8(5), 1560–1563.

By: X. Li*, X. Ni*, H. Liu*, F. Zhang*, S. Liu*, J. Lee*, V. Avrutin*, Ü. Özgür* ...

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Crossref
Added: August 28, 2020

2011 journal article

Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

Physica Status Solidi (a), 208(7), 1532–1534.

By: B. Monemar, P. Paskov*, G. Pozina*, C. Hemmingsson*, P. Bergman*, D. Lindgren*, L. Samuelson*, X. Ni* ...

author keywords: GaN; Mg-doping; MOCVD; m-plane; nanowire; photoluminescence
Source: Crossref
Added: August 28, 2020

2011 journal article

Radial space-charge-limited electron flow in semi-insulating GaN:Fe

Journal of Applied Physics, 110(1), 013723.

By: J. Mareš*, P. Hubík*, J. Krištofik*, L. Prušáková*, Š. Uxa*, T. Paskova*, K. Evans*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Crossref
Added: August 28, 2020

2010 journal article

Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates

Applied Physics Letters, 96(10), 102109.

By: J. Leach*, M. Wu*, X. Ni*, X. Li*, J. Xie*, Ü. Özgür*, H. Morkoç*, T. Paskova* ...

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Crossref
Added: August 28, 2020

2010 journal article

Cyan and green light emitting diode on non-polar m -plane GaN bulk substrate

Physica Status Solidi (c), 7(7-8), 2190–2192.

By: T. Detchprohm*, M. Zhu*, S. You*, Y. Li*, L. Zhao*, E. Preble*, T. Paskova*, D. Hanser*, C. Wetzel*

author keywords: GaInN/GaN; quantum wells; MOVPE; defects; electroluminescence; LEDs
Source: Crossref
Added: August 28, 2020

2010 journal article

Effect of Fe doping on optical properties of freestanding semi-insulating HVPE GaN:Fe

Journal of Crystal Growth, 312(8), 1205–1209.

By: P. Gladkov, J. Humlíček, E. Hulicius, T. Šimeček, T. Paskova* & K. Evans

author keywords: Fe-doping; Optical characterization; Hydride vapor phase epitaxy; Nitrides
Source: Crossref
Added: August 28, 2020

2010 journal article

Effect of Fe doping on the terahertz conductivity of GaN single crystals

Journal of Physics D: Applied Physics, 43(14), 145401.

By: F. Kadlec*, C. Kadlec*, T. Paskova* & K. Evans*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Crossref
Added: August 28, 2020

2010 journal article

Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates

Applied Physics Letters, 96(13), 133505.

By: J. Leach*, C. Zhu*, M. Wu*, X. Ni*, X. Li*, J. Xie*, Ü. Özgür*, H. Morkoç* ...

author keywords: aluminium compounds; electron density; electron gas; field effect transistors; gallium compounds; indium compounds
Source: Crossref
Added: August 28, 2020

2010 journal article

Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth

JOURNAL OF CRYSTAL GROWTH, 312(7), 902–905.

By: K. Lai n, T. Paskova n, V. Wheeler n, J. Grenko n, M. Johnson n, K. Udwary*, E. Preble*, K. Evans*

author keywords: Metalorganic chemical vapor deposition; Nitrides; Semiconducting III-V materials; Light emitting diodes
Source: Web Of Science
Added: August 6, 2018

2010 journal article

InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes

Applied Physics Letters, 97(3), 031110.

By: X. Ni*, X. Li*, J. Lee*, S. Liu*, V. Avrutin*, Ü. Özgür*, H. Morkoç*, A. Matulionis* ...

author keywords: ballistic transport; electroluminescence; gallium compounds; hot carriers; III-V semiconductors; indium compounds; light emitting diodes; wide band gap semiconductors
Source: Crossref
Added: August 28, 2020

2010 journal article

In Situ Raman Analysis of a Bulk GaN-Based Schottky Rectifier Under Operation

Journal of Electronic Materials, 39(10), 2237–2242.

By: H. Xu*, S. Alur*, Y. Wang*, A. Cheng*, K. Kang*, Y. Sharma*, M. Park*, C. Ahyi* ...

author keywords: GaN; Schottky rectifier; Raman spectroscopy
Source: Crossref
Added: August 28, 2020

2010 journal article

Mg-related acceptors in GaN

Physica Status Solidi (c), 7(7-8), 1850–1852.

By: B. Monemar, P. Paskov*, G. Pozina*, C. Hemmingsson*, J. Bergman*, H. Amano*, I. Akasaki*, S. Figge* ...

author keywords: GaN; MOVPE; doping; impurity levels; photoluminescence
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Crossref
Added: August 28, 2020

2010 journal article

Optimization of homoepitaxially grown AlGaN/GaN heterostructures

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 207(10), 2292–2299.

By: J. Grenko n, C. Ebert*, C. Reynolds n, G. Duscher*, D. Barlage n, M. Johnson n, E. Preble*, T. Paskova*, K. Evans*

author keywords: AlGaN; GaN; heterostructures; mobility; MOCVD; two-dimensional electron gas
Source: Web Of Science
Added: August 6, 2018

2010 journal article

Physical Properties of AlGaN/GaN Heterostructures Grown on Vicinal Substrates

Journal of Electronic Materials, 39(5), 504–516.

By: J. Grenko n, C. Reynolds n, D. Barlage n, M. Johnson n, S. Lappi n, C. Ebert*, E. Preble*, T. Paskova*, K. Evans*

author keywords: GaN; vicinal surfaces
Sources: Crossref, Web Of Science
Added: August 6, 2018

2010 journal article

Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures

Solid-State Electronics, 54(11), 1470–1473.

By: D. Storm*, D. Katzer*, D. Deen*, R. Bass*, D. Meyer*, J. Roussos*, S. Binari*, T. Paskova*, E. Preble*, K. Evans*

author keywords: Gallium nitride; High electron mobility transistor; Molecular beam epitaxy; Homoepitaxy; Doping
Source: Crossref
Added: August 28, 2020

2010 journal article

Radiation-induced defects in GaN

Physica Scripta, T141, 014015.

By: N. Son*, C. Hemmingsson*, N. Morishita*, T. Ohshima*, T. Paskova*, K. Evans*, A. Usui*, J. Isoya*, B. Monemar, E. Janzén*

Source: Crossref
Added: August 28, 2020

2010 journal article

Revealing extended defects in HVPE-grown GaN

Journal of Crystal Growth, 312(18), 2611–2615.

By: J. Weyher*, B. łucznik*, I. Grzegory*, J. Smalc-Koziorowska & T. Paskova*

author keywords: Etching; Defects; Hydride vapor phase epitaxy; Nitrides
UN Sustainable Development Goal Categories
15. Life on Land (OpenAlex)
Source: Crossref
Added: August 28, 2020

2010 journal article

The effect of ballistic and quasi-ballistic electrons on the efficiency droop of InGaN light emitting diodes

Physica Status Solidi (RRL) - Rapid Research Letters, 4(8-9), 194–196.

By: X. Ni*, X. Li*, J. Lee*, S. Liu*, V. Avrutin*, Ü. Özgür*, H. Morkoç*, A. Matulionis ...

author keywords: nitride semiconductors; InGaN; LEDs; efficiency; hot electrons
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Crossref
Added: August 28, 2020

2010 journal article

Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate

Semiconductor Science and Technology, 26(2), 022002.

By: Y. Wang*, S. Alur*, Y. Sharma*, F. Tong*, R. Thapa*, P. Gartland*, T. Issacs-Smith*, C. Ahyi* ...

Sources: Crossref, Web Of Science
Added: August 6, 2018

2010 journal article

Various misfit dislocations in green and yellow GaInN/GaN light emitting diodes

Physica Status Solidi (a), 207(6), 1305–1308.

author keywords: dislocations; electroluminescence; GaInN/GaN; LEDs; MOVPE
Source: Crossref
Added: August 28, 2020

2010 journal article

Wavelength-stable cyan and green light emitting diodes on nonpolar m-plane GaN bulk substrates

Applied Physics Letters, 96(5), 051101.

By: T. Detchprohm*, M. Zhu*, Y. Li*, L. Zhao*, S. You*, C. Wetzel*, E. Preble*, T. Paskova*, D. Hanser*

author keywords: current density; dislocations; electroluminescence; gallium compounds; III-V semiconductors; indium compounds; light emitting diodes; semiconductor quantum wells; wide band gap semiconductors
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Crossref
Added: August 28, 2020

2009 journal article

Cathodoluminescence evaluation of subsurface damage in GaN substrate after polishing

Physica Status Solidi (c), 6(S2), S325–S328.

By: K. Lai n, M. Johnson n, T. Paskova*, A. Hanser*, K. Udwary*, E. Preble*, K. Evans*

Source: Crossref
Added: August 28, 2020

2009 journal article

Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes

Applied Physics Letters, 95(12), 121107.

By: X. Li*, X. Ni*, J. Lee*, M. Wu*, Ü. Özgür*, H. Morkoç*, T. Paskova*, G. Mulholland*, K. Evans*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Crossref
Added: August 28, 2020

2009 journal article

Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates

JOURNAL OF APPLIED PHYSICS, 106(11).

By: K. Lai n, T. Paskova n, V. Wheeler n, J. Grenko n, M. Johnson n, D. Barlage n, K. Udwary*, E. Preble*, K. Evans*

author keywords: cathodoluminescence; gallium compounds; III-V semiconductors; indium compounds; quantum confined Stark effect; semiconductor quantum wells; spectral line intensity; spectral line shift; wide band gap semiconductors
Source: Web Of Science
Added: August 6, 2018

2009 journal article

Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN

Applied Physics Letters, 95(10), 101106.

By: X. Ni*, J. Lee*, M. Wu*, X. Li*, R. Shimada*, Ü. Özgür*, A. Baski*, H. Morkoç* ...

Source: Crossref
Added: August 28, 2020

2009 journal article

Modulation of mobility in homoepitaxially-grown AlGaN/GaN heterostructures

Physica Status Solidi (c), 6(S2), S1037–S1040.

By: J. Grenko n, C. Ebert*, C. Reynolds n, M. Johnson n, A. Hanser*, E. Preble*, T. Paskova*, K. Evans*

Source: Crossref
Added: August 28, 2020

2009 journal article

On carrier spillover in c- and m-plane InGaN light emitting diodes

Applied Physics Letters, 95(20), 201113.

By: J. Lee*, X. Li*, X. Ni*, Ü. Özgür*, H. Morkoç*, T. Paskova*, G. Mulholland*, K. Evans*

author keywords: charge injection; current density; gallium compounds; III-V semiconductors; indium compounds; light emitting diodes; photoluminescence
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Crossref
Added: August 28, 2020

2009 journal article

Optical characterization of bulk GaN substrates with c -, a -, and m -plane surfaces

Physica Status Solidi (c), 6(S2), S763–S766.

By: P. Paskov*, B. Monemar, T. Paskova*, E. Preble*, A. Hanser* & K. Evans*

Source: Crossref
Added: August 28, 2020

2009 journal article

Polar and nonpolar HVPE GaN substrates: impact of doping on the structural, electrical and optical characteristics

Physica Status Solidi (c), 6(S2), S344–S347.

By: T. Paskova*, E. Preble*, A. Hanser*, K. Evans*, R. Kröger*, P. Paskov*, A. Cheng*, M. Park*, J. Grenko n, M. Johnson n

Source: Crossref
Added: August 28, 2020

2008 journal article

Development and prospects of nitride materials and devices with nonpolar surfaces

Physica Status Solidi (b), 245(6), 1011–1025.

By: T. Paskova*

Source: Crossref
Added: January 5, 2021

2008 journal article

Enlargement of bulk non-polar GaN substrates by HVPE regrowth

Physica Status Solidi (c), 5(6), 1886–1888.

By: K. Lai n, V. Wheeler n, J. Grenko n, M. Johnson n, A. Hanser*, E. Preble*, L. Liu*, T. Paskova*, K. Evans*

Source: Crossref
Added: August 28, 2020

2008 journal article

Fabrication and characterization of native non-polar GaN substrates

Journal of Crystal Growth, 310(17), 3953–3956.

By: D. Hanser*, L. Liu*, E. Preble*, K. Udwary*, T. Paskova* & K. Evans*

author keywords: growth from vapor; single-crystal growth; nitrides
Source: Crossref
Added: August 28, 2020

2008 journal article

Green light emitting diodes on a-plane GaN bulk substrates

Applied Physics Letters, 92(24), 241109.

By: T. Detchprohm*, M. Zhu*, Y. Li*, Y. Xia*, C. Wetzel*, E. Preble*, L. Liu*, T. Paskova*, D. Hanser*

Source: Crossref
Added: August 28, 2020

2007 journal article

Bending in HVPE grown GaN films: origin and reduction possibilities

Physica Status Solidi (c), 4(7), 2256–2259.

By: T. Paskova*, L. Becker*, T. Böttcher*, D. Hommel*, P. Paskov* & B. Monemar*

Source: Crossref
Added: August 28, 2020

2007 journal article

Defect distribution in a-plane GaN on Al2O3

Applied Physics Letters, 90(12), 121915.

By: F. Tuomisto*, T. Paskova*, R. Kröger*, S. Figge*, D. Hommel*, B. Monemar, R. Kersting

TL;DR: This material is protected by copyright and other intellectual property rights, and duplication or sale of all or part of any of the repository collections is not permitted, except that material may be duplicated by you for your research use or educational purposes in electronic or print form. (via Semantic Scholar)
Source: Crossref
Added: August 28, 2020

2007 journal article

Defect structure ofa-plane GaN grown by hydride and metal-organic vapor phase epitaxy onr-plane sapphire

Physica Status Solidi (c), 4(7), 2564–2567.

By: R. Kröger*, T. Paskova*, B. Monemar, S. Figge*, D. Hommel* & A. Rosenauer*

Source: Crossref
Added: August 28, 2020

2007 journal article

Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers

Journal of Crystal Growth, 300(1), 233–238.

By: V. Darakchieva*, T. Paskova*, M. Schubert*, P. Paskov*, H. Arwin*, B. Monemar, D. Hommel*, M. Heuken* ...

author keywords: high-resolution X-ray diffraction; infrared spectroscopic ellipsometry; phonons; GaN
Source: Crossref
Added: August 28, 2020

2007 journal article

Effect of sapphire-substrate thickness on the curvature of thick GaN films grown by hydride vapor phase epitaxy

Journal of Applied Physics, 102(12), 123507.

By: T. Paskova*, L. Becker*, T. Böttcher*, D. Hommel*, P. Paskov* & B. Monemar

Source: Crossref
Added: August 28, 2020

2007 journal article

Interfacial structure of a-plane GaN grown on r-plane sapphire

Applied Physics Letters, 90(8), 081918.

By: R. Kröger*, T. Paskova*, S. Figge*, D. Hommel*, A. Rosenauer* & B. Monemar

Source: Crossref
Added: August 28, 2020

2007 journal article

Metastability of the UV luminescence in Mg-doped GaN layers grown by MOVPE on quasi-bulk GaN templates

Physica B: Condensed Matter, 401-402, 302–306.

By: G. Pozina*, B. Monemar, P. Paskov*, C. Hemmingsson*, L. Hultman*, H. Amano*, I. Akasaki*, T. Paskova* ...

author keywords: III-nitrides; Mg-doped; metastability; luminescence
Source: Crossref
Added: August 28, 2020

2007 journal article

Nonpolara- andm-plane bulk GaN sliced from boules: structural and optical characteristics

Physica Status Solidi (c), 4(7), 2536–2539.

By: T. Paskova*, R. Kroeger*, D. Hommel*, P. Paskov*, B. Monemar, E. Preble*, A. Hanser*, N. Williams*, M. Tutor*

Source: Crossref
Added: August 28, 2020

2007 journal article

Phonons in strained AlGaN/GaN superlattices

Physica Status Solidi (c), 4(1), 170–174.

By: V. Darakchieva, B. Monemar, T. Paskova*, S. Einfeldt*, D. Hommel* & S. Lourdudoss*

Source: Crossref
Added: August 28, 2020

2007 journal article

Vacancy defect distribution in heteroepitaxial -plane GaN grown by hydride vapor phase epitaxy

Journal of Crystal Growth, 300(1), 251–253.

By: F. Tuomisto*, T. Paskova*, S. Figge*, D. Hommel* & B. Monemar

author keywords: characterization; point defects; hydride vapor phase epitaxy; metalorganic chemical vapor deposition; nitrides; semiconducting gallium compounds
Source: Crossref
Added: August 28, 2020

2006 journal article

Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry ona-plane GaN

Physica Status Solidi (b), 243(7), 1594–1598.

By: V. Darakchieva*, T. Paskova*, P. Paskov*, H. Arwin*, M. Schubert*, B. Monemar, S. Figge*, D. Hommel* ...

Source: Crossref
Added: August 28, 2020

2006 journal article

Bending in HVPE GaN free-standing films: effects of laser lift-off, polishing and high-pressure annealing

Physica Status Solidi (c), 3(6), 1475–1478.

By: T. Paskova*, V. Darakchieva*, P. Paskov*, B. Monemar, M. Bukowski*, T. Suski*, N. Ashkenov*, M. Schubert*, D. Hommel*

Source: Crossref
Added: August 28, 2020

2006 journal article

Dissociation of VGa–ON complexes in HVPE GaN by high pressure and high temperature annealing

Physica Status Solidi (b), 243(7), 1436–1440.

By: F. Tuomisto*, S. Hautakangas*, I. Makkonen*, V. Ranki*, M. Puska*, K. Saarinen*, M. Bockowski*, T. Suski* ...

Source: Crossref
Added: August 28, 2020

2006 journal article

Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy

Applied Physics Letters, 88(14), 141909.

By: T. Paskova*, D. Hommel*, P. Paskov*, V. Darakchieva*, B. Monemar, M. Bockowski*, T. Suski*, I. Grzegory* ...

Source: Crossref
Added: August 28, 2020

2006 journal article

Electron concentration and mobility profiles in InN layers grown by MBE

Physica Status Solidi (a), 203(7), 1681–1685.

By: B. Arnaudov*, T. Paskova*, S. Evtimova*, B. Monemar, H. Lu* & W. Schaff*

Source: Crossref
Added: August 28, 2020

2006 journal article

High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire

Applied Physics Letters, 89(5), 051914.

By: T. Paskova*, R. Kroeger*, S. Figge*, D. Hommel*, V. Darakchieva*, B. Monemar, E. Preble*, A. Hanser*, N. Williams*, M. Tutor*

Source: Crossref
Added: August 28, 2020

2006 journal article

Optical properties of nonpolar -plane GaN layers

Superlattices and Microstructures, 40(4-6), 253–261.

By: P. Paskov*, T. Paskova*, B. Monemar, S. Figge*, D. Hommel*, B. Haskell*, P. Fini*, J. Speck*, S. Nakamura*

author keywords: GaN; photoluminescence; cathodoluminescence; structural defects
Source: Crossref
Added: August 28, 2020

2006 journal article

Optical signatures of dopants in GaN

Materials Science in Semiconductor Processing, 9(1-3), 168–174.

By: B. Monemar, P. Paskov*, J. Bergman*, A. Toropov, T. Shubina*, S. Figge*, T. Paskova*, D. Hommel* ...

author keywords: GaN; HVPE; exciton; donor; acceptor
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Crossref
Added: August 28, 2020

2006 journal article

Photoluminescence ofa -plane GaN: comparison between MOCVD and HVPE grown layers

Physica Status Solidi (c), 3(6), 1499–1502.

By: P. Paskov*, R. Schifano*, T. Malinauskas*, T. Paskova*, J. Bergman*, B. Monemar, S. Figge*, D. Hommel* ...

Source: Crossref
Added: August 28, 2020

2006 journal article

Strain ina-plane GaN layers grown onr-plane sapphire substrates

Physica Status Solidi (a), 203(7), 1672–1675.

By: C. Roder*, S. Einfeldt*, S. Figge*, D. Hommel*, T. Paskova*, B. Monemar*, B. Haskell*, P. Fini*, J. Speck*, S. Nakamura*

Source: Crossref
Added: January 5, 2021

2006 journal article

Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates

Journal of Applied Physics, 100(10), 103511.

By: C. Roder*, S. Einfeldt*, S. Figge*, T. Paskova*, D. Hommel*, P. Paskov*, B. Monemar, U. Behn* ...

Source: Crossref
Added: August 28, 2020

2006 journal article

Structural defect-related emissions in nonpolar a-plane GaN

Physica B: Condensed Matter, 376-377, 473–476.

author keywords: nonpolar GaN; photolummescence; stacking faults
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Crossref
Added: August 28, 2020

2006 journal article

The dominant shallow 0.225 eV acceptor in GaN

Physica Status Solidi (b), 243(7), 1604–1608.

By: B. Monemar, P. Paskov*, J. Bergman*, T. Paskova*, S. Figge*, J. Dennemarck*, D. Hommel*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Crossref
Added: August 28, 2020

2006 journal article

Thermal stability of in-grown vacancy defects in GaN grown by hydride vapor phase epitaxy

Journal of Applied Physics, 99(6), 066105.

By: F. Tuomisto*, K. Saarinen*, T. Paskova*, B. Monemar, M. Bockowski* & T. Suski*

Source: Crossref
Added: August 28, 2020

2006 journal article

Time-resolved spectroscopy of excitons bound at shallow neutral donors in HVPE GaN

Physica B: Condensed Matter, 376-377, 482–485.

By: B. Monemar, P. Paskov*, J. Bergman*, T. Paskova*, C. Hemmingsson*, T. Malinauskas*, K. Jarasiunas*, P. Gibart, B. Beaumont

author keywords: GaN; HVPE; exciton; donor; acceptor
UN Sustainable Development Goal Categories
14. Life Below Water (OpenAlex)
Source: Crossref
Added: August 28, 2020

2005 journal article

Donor-acceptor pair emission enhancement in mass-transport-grown GaN

Journal of Applied Physics, 98(3), 033508.

By: T. Paskova*, B. Arnaudov*, P. Paskov*, E. Goldys, S. Hautakangas, K. Saarinen, U. Södervall*, B. Monemar

Source: Crossref
Added: August 28, 2020

2005 journal article

Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition

Journal of Applied Physics, 98(9), 093519.

By: P. Paskov*, R. Schifano*, B. Monemar*, T. Paskova*, S. Figge* & D. Hommel*

Source: Crossref
Added: August 28, 2020

2005 journal article

Nonpolara-plane HVPE GaN: growth and in-plane anisotropic properties

Physica Status Solidi (c), 2(7), 2027–2031.

Source: Crossref
Added: August 28, 2020

2005 journal article

Optoelectronic devices on bulk GaN

Journal of Crystal Growth, 281(1), 101–106.

By: S. Figge*, T. Böttcher*, J. Dennemarck*, R. Kröger*, T. Paskova*, B. Monemar*, D. Hommel*

author keywords: hydride vapor phase epitaxy; metalorganic vapor phase epitaxy; nitrides
Source: Crossref
Added: August 28, 2020

2005 journal article

Photoluminescence of GaN/AlN superlattices grown by MOCVD

Physica Status Solidi (c), 2(7), 2345–2348.

By: P. Paskov*, J. Bergman*, V. Darakchieva*, T. Paskova*, B. Monemar, M. Iwaya*, S. Kamiyama*, H. Amano*, I. Akasaki*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Crossref
Added: August 28, 2020

2005 journal article

Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers

Journal of Crystal Growth, 281(1), 55–61.

By: T. Paskova*, V. Darakchieva*, P. Paskov*, J. Birch*, E. Valcheva*, P. Persson*, B. Arnaudov*, S. Tungasmitta*, B. Monemar

author keywords: GaN; a-plane; AlN buffer; morphology; microstructure; strain; PL; HRXRD
Source: Crossref
Added: August 28, 2020

2005 journal article

Structural characteristics and lattice parameters of hydride vapor phase epitaxial GaN free-standing quasisubstrates

Journal of Applied Physics, 97(1), 013517.

By: V. Darakchieva*, T. Paskova*, P. Paskov*, B. Monemar*, N. Ashkenov* & M. Schubert*

Source: Crossref
Added: August 28, 2020

2004 journal article

Band structure effects in nitrogen K-edge resonant inelastic X-ray scattering from GaN

Physica Status Solidi (b), 241(7), R27–R29.

By: V. Strocov*, T. Schmitt*, J. Rubensson*, P. Blaha*, T. Paskova* & P. Nilsson*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Crossref
Added: August 28, 2020

2004 journal article

Characterization of mass-transport grown GaN by hydride vapour-phase epitaxy

Journal of Crystal Growth, 273(1-2), 118–128.

By: T. Paskova*, P. Paskov*, E. Goldys*, E. Valcheva*, V. Darakchieva*, U. Södervall*, M. Godlewski*, M. Zielinski* ...

author keywords: emission properties; impurities; stresses; volume defects; mass transport; nitrides
Source: Crossref
Added: August 28, 2020

2004 journal article

Deformation potentials of the E1(TO) and E2 modes of InN

Applied Physics Letters, 84(18), 3636–3638.

By: V. Darakchieva*, P. Paskov*, E. Valcheva*, T. Paskova*, B. Monemar*, M. Schubert*, H. Lu*, W. Schaff*

Source: Crossref
Added: August 28, 2020

2004 journal article

Free-to-bound radiative recombination in highly conducting InN epitaxial layers

Superlattices and Microstructures, 36(4-6), 563–571.

By: B. Arnaudov*, T. Paskova*, P. Paskov*, B. Magnusson*, E. Valcheva*, B. Monemar, H. Lu*, W. Schaff*, H. Amano*, I. Akasaki*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Crossref
Added: August 28, 2020

2004 journal article

HVPE-GaN: comparison of emission properties and microstructure of films grown on different laterally overgrown templates

Diamond and Related Materials, 13(4-8), 1125–1129.

By: T. Paskova*, E. Valcheva*, P. Paskov*, B. Monemar, A. Roskowski n, R. Davis n, B. Beaumont, P. Gibart

author keywords: GaN quasi-substrates; microstructure; emission distribution; TEM; CL
Sources: Crossref, Web Of Science
Added: August 6, 2018

2004 journal article

Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications: Strain distribution and wafer bending

Journal of Electronic Materials, 33(5), 389–394.

By: T. Paskova*, V. Darakchieva*, E. Valcheva*, P. Paskov*, I. Ivanov*, B. Monemar, T. Böttcher*, C. Roder*, D. Hommel*

author keywords: GaN; HVPE; strain; wafer bending
Source: Crossref
Added: August 28, 2020

2004 journal article

Infrared ellipsometry and Raman studies of hexagonal InN films: correlation between strain and vibrational properties

Superlattices and Microstructures, 36(4-6), 573–580.

Source: Crossref
Added: August 28, 2020

2004 journal article

Optical investigation of AlGaN/GaN quantum wells and superlattices

Physica Status Solidi (a), 201(10), 2251–2258.

By: B. Monemar, P. Paskov*, H. Haradizadeh*, J. Bergman*, E. Valcheva*, V. Darakchieva*, B. Arnaudov*, T. Paskova* ...

Source: Crossref
Added: August 28, 2020

2004 journal article

Polar and nonpolar GaN grown by HVPE: Preferable substrates for nitride-based emitting devices

Physica Status Solidi (a), 201(10), 2265–2270.

By: T. Paskova*, P. Paskov*, E. Valcheva*, V. Darakchieva*, J. Birch*, A. Kasic*, B. Arnaudov*, S. Tungasmita*, B. Monemar

Source: Crossref
Added: August 28, 2020

2004 journal article

Polarized photoluminescence of exciton-polaritons in free-standing GaN

Physica Status Solidi (a), 201(4), 678–685.

By: P. Paskov, T. Paskova*, P. Holtz* & B. Monemar

Source: Crossref
Added: August 28, 2020

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